CN114717647A - Method for determining doping agent addition amount of crystal bar - Google Patents
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- 239000013078 crystal Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000002019 doping agent Substances 0.000 title claims description 131
- 238000005204 segregation Methods 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 17
- 238000009833 condensation Methods 0.000 claims description 10
- 230000005494 condensation Effects 0.000 claims description 10
- 238000005345 coagulation Methods 0.000 claims description 4
- 230000015271 coagulation Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
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- 239000007788 liquid Substances 0.000 description 4
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- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- -1 hydrogen Chemical class 0.000 description 1
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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Abstract
The invention discloses a method for determining the doping amount of a crystal bar, which relates to the technical field of semiconductors and can improve the accuracy of the doping amount of the crystal bar and the concentration of the resistivity of the head of the generated crystal bar. The method comprises the following steps: determining the first addition amount of the first feeding according to the preset target resistivity; determining a first target addition amount according to the first addition amount, the first volatilization amount, the first segregation amount and the first surplus amount, wherein the first volatilization amount is determined according to the heating power of the single crystal furnace, and the first target addition amount is the amount which needs to be added when the resistivity of the second crystal rod reaches the target resistivity when the second crystal rod starts to have the equal diameter; and determining a second target addition amount according to the first target addition amount, the second volatilization amount, the second segregation amount, the second surplus amount and the resistivity of the first crystal bar, wherein the second target addition amount is the amount which needs to be added when the resistivity of the third crystal bar reaches the target resistivity when the third crystal bar starts to have the equal diameter.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for determining the addition amount of a dopant of a crystal bar.
Background
In the preparation of silicon or germanium single crystals, a certain amount of dopant is usually added to the ingot, and the added dopant can determine the electrical properties of the ingot, such as conductivity type, resistivity and the like.
In the process of adding the dopant, the addition amount of the dopant needs to be determined according to the thermal field environment and the volatilization coefficient of the dopant. In the prior art, the volatilization coefficient is generally determined according to the experience of an operator, and the accuracy of the addition amount of the dopant determined according to the volatilization coefficient is low, so that the resistivity concentration of the head part of the generated crystal bar is poor.
Disclosure of Invention
The invention provides a method for determining the doping amount of a crystal bar, which can improve the accuracy of the doping amount of the crystal bar and improve the concentration of the resistivity of the head of the generated crystal bar.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for determining a dopant addition amount of an ingot, the ingot being generated using a direct faraday crystal, the method comprising:
determining the first addition amount of the first crystal bar according to a preset target resistivity, wherein the first addition amount is the amount of the dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter;
determining a first target addition amount according to the first addition amount, a first volatilization amount and a first segregation amount of the dopant and the monitored first surplus amount of the dopant, wherein the first volatilization amount is determined according to the heating power of the single crystal furnace, and the first target addition amount is an amount which needs to be added when the resistivity of the second crystal rod reaches the target resistivity when the second crystal rod starts to have equal diameter;
and determining a second target addition amount according to the first target addition amount, a second volatilization amount of the dopant, a second segregation amount and a second residual amount, and the resistivity of the first ingot, wherein the second volatilization amount is determined according to the heating power, and the second target addition amount is the amount which needs to be added when the resistivity of the third ingot reaches the target resistivity when the third ingot starts to have the equal diameter.
By adopting the method for determining the doping agent addition amount of the crystal bar, the doping agent addition amount of the current crystal bar is adjusted according to the segregation amount, the surplus amount and the volatilization amount of the doping agent in the process of growing the last crystal bar of the current crystal bar and the resistivity of the head of the last crystal bar of the current crystal bar in the process of determining the doping agent addition amount. The volatilization amount of the dopant is determined according to the heating power of the single crystal furnace, so that the obtained volatilization amount of the dopant can be more accurate, the accuracy of the doping amount of the current crystal bar can be improved, and the concentration of the resistivity of the head of the generated crystal bar is improved to be closer to the target resistivity.
In a possible implementation manner, the first volatilization amount is an amount of a dopant volatilized in a process of growing the first ingot, the first segregation amount is an amount of a dopant permeating into the first ingot in the process of growing the first ingot, and the first remaining amount is an amount of a dopant remaining in a first addition amount after the first ingot is grown.
In a possible implementation manner, the resistivity of the crystal bar is a resistivity corresponding to an annular region extending to the center of the circle for a preset distance along the edge of the crystal bar.
In a possible implementation, the predetermined distance is between 28 mm and 32 mm.
In a possible implementation manner, the determining a first addition amount of the first dosing according to a preset target resistivity includes:
determining doping concentration according to the target resistivity, wherein the doping concentration is the concentration of a dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter;
the first addition amount is determined according to the doping concentration and the volume of the solution in the single crystal furnace.
In a possible implementation manner, the determining a first target addition amount according to the first addition amount, the first volatilization amount and the first segregation amount of the dopant, and the monitored first remaining amount of the dopant includes:
determining a target volatilization speed according to the heating power;
determining a first volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing the first crystal bar;
determining a first fractional condensation amount;
and subtracting the first residual amount from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain a first target addition amount.
In one possible implementation, the determining the target volatilization speed according to the heating power includes:
determining a prestored target power interval to which the heating power belongs;
and determining the target volatilization speed corresponding to the target power interval according to the corresponding relation between the power interval and the volatilization speed.
In a possible implementation manner, the subtracting the first remaining amount from the first addition amount, and adding the first coagulation amount and the first volatilization amount to obtain the first target addition amount includes:
and subtracting the first residual amount and the dopant content in the low-resistance raw material from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain a first target addition amount, wherein the low-resistance raw material is a solution in the single crystal furnace.
In one possible implementation manner, the determining the second target addition amount according to the first target addition amount, the second volatilization amount, the second segregation amount, the second remaining amount of the dopant, and the resistivity of the first ingot includes:
determining a target volatilization speed according to the heating power;
determining a second volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing a second crystal bar;
determining a second fractional condensation amount;
and subtracting the second residual amount from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount, wherein the third target addition amount is the adjustment amount of the dopant determined according to the measured resistivity of the first crystal rod and the target resistivity.
In one possible implementation manner, the subtracting the second remaining amount from the first target addition amount, and adding the second segregation amount, the second volatilization amount, and the third target addition amount to obtain the second target addition amount includes:
and subtracting the second residual amount and the dopant content in the low-resistance raw material from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount.
In a second aspect, the present application provides a system for determining a dopant addition amount of an ingot, which is used for executing the method for determining a dopant addition amount of an ingot according to the first aspect or any one of the possible implementations of the first aspect.
Compared with the prior art, the embodiment disclosed by the invention has the following advantages:
the calculation logic for calculating the doping amount according to the doping segregation and volatilization principles aiming at the thermal fields with different sizes and the single crystal bars with different sizes is provided, the manual workload and the calculation errors caused by human factors are reduced, the labor cost is reduced to the maximum extent, and the working efficiency is improved.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for determining a dopant addition amount of an ingot according to an embodiment of the present invention;
FIG. 2 is a second schematic flowchart of a method for determining a dopant addition amount of an ingot according to an embodiment of the present invention;
fig. 3 is a third schematic flowchart of a method for determining a dopant addition amount of an ingot according to an embodiment of the present invention;
fig. 4 is a fourth flowchart illustrating a method for determining an amount of dopant added to an ingot according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following, the terms "first", "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present disclosure, "a plurality" means two or more unless otherwise specified. Additionally, the use of "based on" or "according to" means open and inclusive, as a process, step, calculation, or other action that is "based on" or "according to" one or more stated conditions or values may in practice be based on additional conditions or exceeding the stated values.
The computational logic of the doping agent addition amount of the crystal bar is as follows:
extracting the materials from Scada data in a mode of combining with a centralized control system (time of different power intervals/temperature intervals can be read), distinguishing circulating materials with different resistivities, considering the adding weight of the materials, simulating according to different resistivity mean values, finally summing to obtain a result 1, lengthening along with the running time of a furnace platform, adjusting each RCZ section, adding each section of coefficient adjustment on the original basis, performing calculation on the basis of the calculation result 1, and finally adding a separation section adjusting function to correct the materials with higher/lower resistivity due to different lead-discharge time (shoulder-off and broken line, melt-back, low-resistance materials and the like), and correcting the adding according to the head resistivity of the upper section and the doping amount of the upper section.
The method for determining the doping amount of the crystal bar comprises the following steps:
the doping principle of the head of the crystal bar is as follows: converting the resistivity of the edge of the crystal bar at a position 30mm towards the center of a circle into a dopant concentration, capturing the dopant volatilization amount in the processes of Ga volatilization, first feeding, temperature adjustment, leading and releasing and the like after melting materials according to standard working hours and big data, and supplementing the original dopant concentration to ensure that the corresponding dopant concentration after volatilization (namely when the equal diameter is started) is the dopant concentration corresponding to the required resistivity;
segregation and volatilization doping principle: taking each time of feeding, namely adding the dopant again as a time node, considering the volatilization amount of the dopant in different power intervals (different temperatures and different volatilization) and the content of the dopant which is condensed in the crystal bar, calculating the content of the dopant according to the residual amount in the furnace and converting the content of the dopant into concentration to obtain the feeding amount, and accurately supplementing the feeding amount during the secondary feeding;
refining the resistivity interval of the circulating material, wherein the low-resistance raw material contains more dopant, the dopant content is calculated according to the resistivity and deducted in the calculation result, and the original polycrystalline default resistance is infinite and does not contain the dopant;
because the air permeability of the furnace platforms is different, the output resistivity of each furnace platform fluctuates, and large data is required to be taken as the standard, and the large data is used for summarizing long-term operation parameters of each furnace platform;
because the doping is carried out in the process of pre-doping, the furnace platform can not be guided and released once, the resistivity of the head part is higher, and the adjustment of the interval is needed, and because the resistivity of the upper root crystal bar can not be detected due to high temperature during the doping, the adjustment is needed according to the upper root, so all the volatilization time between the two times of feeding is considered; the interval adjustment is a parameter obtained by combining the big data and operation experience evaluation;
the total adding and doping logic adopted by the invention is as follows: adding amount (corresponding and supplemented head resistance) -dopant content in residual materials in the furnace + dopant content segregated in the crystal bar + dopant content volatilized at different time + dopant content required to be supplemented by interval adjustment;
the time required by the logic is written into software, the volatilization coefficients including the types of raw materials, the resistance interval, the volatilization time and the like are set according to different charging times, and the calculation is carried out by utilizing the segregation formula in GBT-13389-2014.
The present embodiment provides a method for determining the dopant addition amount of an ingot, which includes the following steps 201 to 203.
201. And determining the first addition amount of the first feeding according to the preset target resistivity.
Wherein the first addition amount is the amount of the dopant required when the resistivity of the first ingot reaches the target resistivity when the first ingot starts to have the equal diameter.
Optionally, the resistivity of the crystal bar is a resistivity corresponding to an annular region extending to the center of the circle by a preset distance along the edge of the crystal bar.
Illustratively, the predetermined distance may be 28 mm to 32 mm. For example, the preset distance may be 30 mm.
202. According to the monitored temperature of the liquid level of the silicon liquid in the single crystal furnace, a doping concentration and resistivity conversion formula in GBT _13389-2014 is adopted to calculate a first target doping amount: and a first target adding amount is the first adding amount in the step 201, namely the dopant content in the residual materials in the furnace, the dopant content in segregation in the crystal bar and the dopant content volatilized at different time, wherein the first target adding amount is the amount which needs to be added when the resistivity of the second crystal bar reaches the target resistivity when the second crystal bar starts to have the same diameter.
The first volatilization amount is determined according to the heating power of the single crystal furnace, and the first target addition amount is the amount which needs to be added when the resistivity of the second crystal rod reaches the target resistivity when the second crystal rod starts to have the same diameter.
Optionally, the first volatilization amount is an amount of a dopant volatilized in a process of growing the first ingot, the first segregation amount is an amount of the dopant permeating into the first ingot in the process of growing the first ingot, and the first remaining amount is an amount of the dopant remaining in a first addition amount after the first ingot is grown.
203. And determining a second target adding amount according to the first target adding amount, the second volatilization amount, the second segregation amount and the second residual amount of the doping agent and the resistivity of the first crystal rod, namely the upper crystal rod, and the like.
The second volatilization amount is also determined according to the heating power, and the second target addition amount is the amount which needs to be added when the resistivity of the third crystal bar reaches the target resistivity when the third crystal bar starts to have the same diameter.
Optionally, the second volatilization amount is the amount of the dopant volatilized in the process of growing the first ingot; the second segregation amount is the amount of the dopant permeating into the second crystal bar in the process of growing the second crystal bar; the second residual amount is the amount of the dopant remaining in the total amount of the first residual amount and the first target addition amount after the second ingot is grown.
By using the method for determining the dopant addition amount of the ingot provided by this embodiment, in the process of determining the dopant addition amount, the dopant addition amount of the current ingot is adjusted according to the segregation amount, the residual amount, and the volatilization amount of the dopant in the process of growing the previous ingot of the current ingot, and the resistivity of the head of the previous ingot of the current ingot. The volatilization amount of the dopant is determined according to the heating power of the single crystal furnace, so that the obtained volatilization amount of the dopant can be more accurate, the accuracy of the doping amount of the current crystal bar can be improved, the concentration of the resistivity of the head of the generated crystal bar is improved, and the generated crystal bar is closer to the target resistivity.
Referring to fig. 1, as shown in fig. 2, the step 201 may include the following specific steps 301 to 302.
301. And determining the doping concentration according to the target resistivity, wherein the doping concentration is the concentration of the dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter.
Alternatively, the doping concentration may be determined with reference to the following formula (1).
Where ρ represents a target resistivity, the unit of which is ohm-centimeters (Ω · cm); n is a radical of hydrogenARepresents the doping concentration, the unit of which is per cubic centimeter (cm)-3)。
It is to be understood that the calculation of the doping concentration of the dopant based on the resistivity is calculated with reference to the national standard GBT-13389-2014.
302. The first addition amount is determined according to the doping concentration and the volume of the solution in the single crystal furnace.
In conjunction with fig. 2, as shown in fig. 3, the above step 202 may include the following steps 401 to 404.
401. And determining the target volatilization speed according to the heating power.
Alternatively, the target volatilization velocity can be determined according to the heating power. Specifically, first, the target power interval to which the heating power of the single crystal furnace belongs may be pre-stored. And then, according to the corresponding relation between the power interval and the volatilization speed, referring to the big data to adjust the target volatilization speed corresponding to the target power interval.
402. And determining the first volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing the first crystal bar.
It will be appreciated that the volatilization time is monitored by a monitoring device. The volatilization time is monitored by monitoring equipment, and the volatilization amount of the dopant in the process of growing each crystal bar can be very accurately calculated according to the specific volatilization speed.
403. The first fractional amount is determined by referring to GBT _ 13389-.
It should be understood that the first fractional point is determined with reference to the national standard GBT _ 13389-2014.
Optionally, after the first condensation amount and the first volatilization amount are determined, the first remaining amount may be determined according to the first addition amount, the first volatilization amount, and the first condensation amount. Specifically, the first remaining amount can be obtained by subtracting the first coagulation amount and the first volatilization amount from the first addition amount.
404. And subtracting the first residual amount from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain a first target addition amount.
Optionally, the dopant content in the raw materials of different silicon solutions is different, so that when the first target addition amount is determined, the raw materials of the silicon solution for generating the ingot can be combined, so that the determined first target addition amount is more accurate, and the concentration of the resistivity of the head of the generated ingot is better.
In one embodiment, the low resistance source material contains a large amount of dopant, and therefore, if the source material of the silicon solution is the low resistance source material, the dopant content in the low resistance source material can be subtracted when determining the first target addition amount. Specifically, the first target addition amount is determined as follows: and subtracting the first residual amount and the content of the dopant in the low-resistance raw material from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain a first target addition amount. Wherein the low-resistance raw material is a solution in a single crystal furnace.
In another embodiment, the resistance of the poly is default to infinity, i.e., no dopant is contained in the poly, so if the source material of the silicon solution is a poly source material, the silicon solution may be considered to contain no dopant.
Optionally, in the process of generating one ingot by the single crystal furnace, because the conditions of shoulder-off, breakage, melting back and the like may exist, one-time guiding and releasing cannot be performed, which may cause the resistivity of the head of the generated ingot to be higher or lower, and therefore, the dopant addition amount needs to be adjusted according to the resistivity of the head of the generated upper ingot and the dopant addition amount when the previous ingot is generated, that is, the partition adjustment.
Referring to fig. 3, as shown in fig. 4, step 203 may include the following steps 501 to 504.
501. And determining the target volatilization speed according to the heating power.
502. And determining a second volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing the second crystal bar.
503. A second fractional condensation is determined.
504. And subtracting the second residual amount from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount, wherein the third target addition amount is the adjustment amount of the dopant determined according to the measured resistivity of the first crystal rod and the target resistivity.
Alternatively, since the resistivity of the head of the ingot cannot be measured due to the high temperature of the ingot which is just produced, the amount of the dopant to be added needs to be adjusted according to the resistivity of the head of the upper and lower root ingot which is produced.
Optionally, if the silicon solution is a low-resistance raw material, determining that the second target addition amount may be: and subtracting the second residual amount and the dopant content in the low-resistance raw material from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount.
It is to be understood that when the fourth ingot is grown by pulling it straight, the dopant addition is determined in the same manner as when the third ingot is grown, but the fourth ingot is grown with reference to the resistivity of the second ingot. By analogy, when the fifth crystal rod is generated, the resistivity of the third crystal rod needs to be referred to. That is, the resistivity of the upper ingot needs to be referred to for each ingot produced from the third ingot.
The method for determining the dopant addition amount of the ingot provided by the embodiment is realized by a determination system. The system for determining the addition amount of the dopant of the crystal bar can comprise: the monitoring module is used for continuously monitoring various operation data of the single crystal furnace in real time and transmitting the operation data to the determining device, and the operation data at least comprises: and the temperature of the liquid level of the silicon liquid corresponding to each time point. The determining means may comprise: a processor and a memory. The monitoring module is in signal connection with the memory, and the memory is in signal connection with the processor. The monitoring module transmits the operation data to the memory to form a database, and the processor is used for calculating the addition amount of the dopant according to the operation data in the database.
The processor is a control center of the apparatus for determining the dopant addition amount of the ingot, and may be a single processor or a collective term for a plurality of processing elements. For example, the processor may be a general-purpose Central Processing Unit (CPU), or may be another general-purpose processor. Wherein a general purpose processor may be a microprocessor or any conventional processor or the like.
For one embodiment, the processor may include one or more CPUs.
The memory may be, but is not limited to, a read-only memory (ROM) or other type of static storage device that may store static information and instructions, a Random Access Memory (RAM) or other type of dynamic storage device that may store information and instructions, an electrically erasable programmable read-only memory (EEPROM), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer.
In one possible implementation, the memory may exist separately from the processor, and the memory may be coupled to the processor via a bus for storing instructions or program code. The processor can implement the method for determining the dopant addition amount of the crystal bar provided by the following embodiments of the invention when calling and executing the instructions or program codes stored in the memory.
In another possible implementation, the memory may be integrated with the processor.
The determining means may comprise: a first determination unit, a second determination unit, and a third determination unit.
The first determining unit is used for determining a first adding amount added for the first time according to a preset target resistivity, wherein the first adding amount is the amount of a dopant required when the resistivity of the first crystal rod reaches the target resistivity when the first crystal rod starts to have the same diameter. And the second determining unit is used for determining a first target adding amount according to the first adding amount, the first volatilization amount and the first segregation amount of the dopant and the monitored first surplus amount of the dopant, wherein the first volatilization amount is determined according to the heating power of the single crystal furnace, and the first target adding amount is the amount which needs to be added when the resistivity of the second crystal rod reaches the target resistivity when the second crystal rod starts to have the equal diameter. And the third determining unit is used for determining a second target adding amount according to the first target adding amount, a second volatilization amount of the dopant, a second segregation amount and a second residual amount, and the resistivity of the first ingot, wherein the second volatilization amount is determined according to the heating power, and the second target adding amount is the amount which needs to be added when the resistivity of the third ingot reaches the target resistivity when the third ingot starts to have the equal diameter.
Optionally, the first volatilization amount is an amount of a dopant volatilized in a process of growing the first ingot, the first segregation amount is an amount of the dopant permeating into the first ingot in the process of growing the first ingot, and the first remaining amount is an amount of the dopant remaining in a first addition amount after the first ingot is grown.
Optionally, the resistivity of the crystal bar is a resistivity corresponding to an annular region extending to the center of the circle by a preset distance along the edge of the crystal bar.
Optionally, the predetermined distance is 28 mm to 32 mm.
Optionally, the first determining unit is specifically configured to: determining doping concentration according to the target resistivity, wherein the doping concentration is the concentration of a dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter; and determining the first addition amount according to the doping concentration and the volume of the solution in the single crystal furnace. The first determination unit may be configured to perform the steps in the above-described method for determining the dopant addition amount of the ingot.
Optionally, the second determining unit is specifically configured to: determining a target volatilization speed according to the heating power; determining a first volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing the first crystal rod; determining a first fractional condensation amount; and subtracting the first residual amount from the first addition amount, and adding the first coagulation amount and the first volatilization amount to obtain a first target addition amount. The second determination unit may be configured to perform the steps in the above-described method for determining the dopant addition amount of the ingot.
Optionally, the second determining unit is specifically configured to: determining a prestored target power interval to which the heating power belongs; and determining the target volatilization speed corresponding to the target power interval according to the corresponding relation between the power interval and the volatilization speed.
Optionally, the second determining unit is specifically configured to: and subtracting the first residual amount and the dopant content in the low-resistance raw material from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain a first target addition amount, wherein the low-resistance raw material is a solution in the single crystal furnace.
Optionally, the third determining unit is specifically configured to: determining a target volatilization speed according to the heating power; determining a second volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing a second crystal bar; determining a second fractional condensation amount; and subtracting the second residual amount from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount, wherein the third target addition amount is the adjustment amount of the dopant determined according to the measured resistivity of the first crystal rod and the target resistivity.
Optionally, the third determining unit is specifically configured to: and subtracting the second residual amount and the dopant content in the low-resistance raw material from the first target addition amount, and adding a second segregation amount, a second volatilization amount and a third target addition amount to obtain a second target addition amount.
Another embodiment of the present application further provides a computer-readable storage medium, in which computer instructions are stored, and when the computer instructions are executed on a device for determining the dopant addition amount of an ingot, the device for determining the dopant addition amount of the ingot performs the steps performed by the specification detecting device in the method flow shown in the above-mentioned method embodiment.
Another embodiment of the present application further provides a chip system, which is applied to the apparatus for determining the dopant addition amount of the ingot. The system-on-chip includes one or more interface circuits, and one or more processors. The interface circuit and the processor are interconnected by a line. The interface circuit is used for receiving signals from a memory of the device for determining the dopant addition amount of the crystal bar and sending the signals to the processor, wherein the signals comprise computer instructions stored in the memory. When the processor executes the computer instructions, the apparatus for determining the dopant addition amount of the ingot performs the steps performed by the apparatus for determining the dopant addition amount of the ingot in the method flow shown in the above-described method embodiment.
In another embodiment of the present application, there is further provided a computer program product, which includes instructions that, when executed on the apparatus for determining the dopant addition amount of an ingot, cause the apparatus for determining the dopant addition amount of an ingot to perform the steps performed by the apparatus for determining the dopant addition amount of an ingot in the method flow shown in the above-mentioned method embodiment.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented using a software program, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. The processes or functions according to the embodiments of the present invention are wholly or partially generated when the computer-executable instructions are loaded and executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored on a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wire (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). Computer-readable storage media can be any available media that can be accessed by a computer or can comprise one or more data storage devices, such as servers, data centers, and the like, that can be integrated with the media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., Solid State Disk (SSD)), among others.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions within the technical scope of the present invention are intended to be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for determining the doping agent addition amount of a crystal bar, wherein the crystal bar is generated by adopting a straight Faraday crystal, and the method is characterized by comprising the following steps:
determining the first addition amount of the first crystal bar according to a preset target resistivity, wherein the first addition amount is the amount of a dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter;
determining a first target addition amount according to the first addition amount, a first volatilization amount and a first segregation amount of the dopant and the monitored first residual amount of the dopant, wherein the first volatilization amount is determined according to the heating power of the single crystal furnace, and the first target addition amount is an amount which needs to be added when the resistivity of a second crystal rod starts to be equal in diameter and the resistivity of the second crystal rod reaches the target resistivity;
and determining a second target addition amount according to the first target addition amount, a second volatilization amount, a second segregation amount and a second residual amount of the dopant and the resistivity of the first crystal bar, wherein the second volatilization amount is determined according to the heating power, and the second target addition amount is the amount which needs to be added when the resistivity of the third crystal bar reaches the target resistivity when the third crystal bar starts to have the same diameter.
2. The method for determining the dopant addition amount of the ingot according to claim 1, wherein the first volatilization amount is an amount of the dopant volatilized during the growth of the first ingot, the first segregation amount is an amount of the dopant permeated into the first ingot during the growth of the first ingot, and the first remaining amount is an amount of the dopant remaining in the first addition amount after the growth of the first ingot is completed.
3. The method as claimed in claim 1 or 2, wherein the resistivity of the ingot is a resistivity corresponding to an annular region extending from the edge of the ingot to the center of the circle by a predetermined distance.
4. The method of claim 3, wherein the predetermined distance is 28 mm to 32 mm.
5. The method for determining the dopant addition amount of the ingot according to claim 1 or 2, wherein the determining the first addition amount of the first shot according to the preset target resistivity comprises:
determining doping concentration according to the target resistivity, wherein the doping concentration is the concentration of a dopant required when the resistivity of the first crystal bar reaches the target resistivity when the first crystal bar starts to have equal diameter;
and determining the first addition amount according to the doping concentration and the volume of the solution in the single crystal furnace.
6. The method of claim 1 or 2, wherein determining a first target addition amount based on the first addition amount, the first volatilization amount and the first segregation amount of the dopant, and the monitored first remaining amount of the dopant comprises:
determining a target volatilization speed according to the heating power;
determining the first volatilization amount according to the target volatilization speed and the volatilization time monitored in the process of growing the first crystal bar;
determining the first fractional condensation amount;
and subtracting the first residual amount from the first addition amount, and adding the first coagulation amount and the first volatilization amount to obtain the first target addition amount.
7. The method of claim 6, wherein said determining a target volatilization velocity from the heating power comprises:
determining a prestored target power interval to which the heating power belongs;
and determining a target volatilization speed corresponding to the target power interval according to the corresponding relation between the power interval and the volatilization speed.
8. The method of claim 6, wherein the subtracting the first remaining amount from the first addition amount and adding the first segregation amount and the first volatilization amount to obtain the first target addition amount comprises:
and subtracting the first residual amount and the dopant content in the low-resistance raw material from the first addition amount, and adding the first segregation amount and the first volatilization amount to obtain the first target addition amount, wherein the low-resistance raw material is the solution in the single crystal furnace.
9. The method of claim 1 or 2, wherein determining a second target addition amount based on the first target addition amount, a second volatilization amount, a second segregation amount, a second remaining amount of the dopant, and the resistivity of the first ingot comprises:
determining a target volatilization speed according to the heating power;
determining the second volatilization volume according to the target volatilization speed and the volatilization time monitored in the process of growing the second crystal bar;
determining the second fractional condensation amount;
and subtracting the second residual amount from the first target addition amount, and adding the second segregation amount, the second volatilization amount and a third target addition amount to obtain the second target addition amount, wherein the third target addition amount is an adjustment amount of the dopant determined according to the measured resistivity of the first crystal rod and the target resistivity.
10. The method of claim 9, wherein the subtracting the second residual amount from the first target addition amount and adding the second segregation amount, the second volatilization amount, and a third target addition amount to obtain the second target addition amount comprises:
and subtracting the second residual amount and the dopant content in the low-resistance raw material from the first target addition amount, and adding the second condensation amount, the second volatilization amount and the third target addition amount to obtain a second target addition amount.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115182042A (en) * | 2022-07-22 | 2022-10-14 | 包头美科硅能源有限公司 | Large-size gallium-doped single crystal production method for increasing length of pull rod |
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