CN114709291B - GeSe-based two-dimensional nanomaterial infrared spectrum detector and preparation method thereof - Google Patents
GeSe-based two-dimensional nanomaterial infrared spectrum detector and preparation method thereof Download PDFInfo
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- 229910005866 GeSe Inorganic materials 0.000 title claims abstract description 53
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 37
- 238000002329 infrared spectrum Methods 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 13
- 238000001228 spectrum Methods 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 12
- 238000007641 inkjet printing Methods 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 6
- 239000002052 molecular layer Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000010801 machine learning Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 3
- 229940056932 lead sulfide Drugs 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 22
- 239000011159 matrix material Substances 0.000 description 10
- 230000013016 learning Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005681 electric displacement field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005316 response function Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract
The application discloses a GeSe-based two-dimensional nanomaterial infrared spectrum detector and a preparation method thereof, and belongs to the field of infrared spectrum detector devices.
Description
Technical Field
The application belongs to the field of infrared spectrum detector devices, and particularly relates to an intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector and a preparation method thereof.
Technical Field
Infrared spectrum detection has a key role in important fields such as biomedical, industrial detection, military and military industry and the like. In recent years, a novel nano-sized semiconductor material represented by a two-dimensional nanomaterial has excellent advantages: the detection sensitivity is high, the dark current is extremely low, and the device can work in a high-temperature environment. These indexes are superior to the traditional thin film devices and are one of the powerful competitors of the new generation of infrared detection technology. However, the conventional two-dimensional nano infrared detector still has the following defects in practical application, including: 1. a complex and expensive integrated circuit process is needed to construct a detection target surface of the linear array; 2. expensive and fragile gratings are needed to be adopted for light splitting of the spectrum sensor in advance; 3. the sensor target surface formed by the infrared material is not matched with the silicon-based circuit, and has poor compatibility and low integration level.
The two-dimensional nano material represented by graphene has excellent optical and electrical properties, and the carrier mobility at room temperature can reach 10 4 However, graphene lacks an intrinsic band gap, which is unfavorable for constructing an optoelectronic device with high detection efficiency, large switching ratio and low power consumption. Other two-dimensional materials, such as molybdenum disulfide, have a relatively wide band gap, but have very low carrier mobility; black phosphorus has high carrier mobility and a suitable band gap, but black phosphorus is easily oxidized in air. In comparison to the above two-dimensional nanomaterials, geSe is theoretically considered as the only material with a direct band gap, and the spectral range of the material is predicted to cover almost the entire solar spectrum, possessing high carrier mobility and higher stability. These properties make GeSe the most promising candidate in the infrared spectrum detection field. At present, the traditional infrared spectrum detector usually adopts a grating for carrying out advanced light splitting, and the grating is high in price and easy to break, so that the project replaces light splitting spectrum by a machine learning method, and reconstruction of light signals of different wave bands is realized. The purposes of reducing the manufacturing cost of the detector and improving the detection efficiency of the detector are achieved.
Disclosure of Invention
The application aims to design and develop an intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector to realize the detection of multiband infrared spectrums. The inherent defects of low detection precision, narrow detection wave band, difficult optical signal-electric signal conversion and the like of the traditional sensor are overcome; and at the external end of the detector, machine learning is used for carrying out light splitting instead of a light splitting grating. The GeSe two-dimensional nano material is matched with a silicon-based circuit, so that the detector has high integration level, and the cost of the sensor is reduced. The application further aims to provide a preparation method of the GeSe two-dimensional nanometer infrared spectrum detector with intelligent sensing.
The technical scheme adopted by the application is as follows: the intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector comprises a gate electrode, an insulating layer, a source electrode, a drain electrode, a two-dimensional nanometer material photosensitive layer and a semiconductor active layer which are formed on a substrate, wherein the gate electrode is arranged on a bottom layer, and the insulating layer, the source electrode, the drain electrode, the two-dimensional nanometer material photosensitive layer and the semiconductor active layer are sequentially arranged from bottom to top. The spectrum detector is driven by a certain voltage, and the GeSe two-dimensional nanomaterial photosensitive layer can convert the optical signal of the infrared light source into an electric signal. The role of the semiconductor active layer is to increase the conductivity of the device.
The insulating layer can be solid insulating layer such as silicon dioxide, silicon nitride, aluminum oxide, etc. by chemical vapor deposition, atomic layer deposition or magnetron sputtering, or sol-gel organic gate insulating layer such as PMMA, su8, etc. manufactured by spin coating, printing or dispensing method.
The two-dimensional nanomaterial photosensitive layer is composed of two-dimensional nanomaterial GeSe.
The thickness of the insulating layer is 100-120nm, the thickness of the two-dimensional nano material photosensitive layer is 1-30nm, the thickness of the semiconductor active layer is 60-80nm, a unique unilateral nano heterojunction is constructed, the electrical property of the device is improved, and the photosensitive efficiency of the photoelectric detector is enhanced.
The material used for the semiconductor active layer can be one of cadmium selenide, lead sulfide, lead oxide and the like.
The spectroscopic uses infrared spectrum current reconstruction to replace the traditional grating spectroscopic, and comprises three steps of learning, sampling and reconstruction, wherein an n multiplied by n matrix is generated in the learning process; decomposing the sample into a matrix equation by discretization in the sampling step; and solving a matrix equation in the reconstruction process, namely reconstructing the spectrum of the incident light.
The preparation method of the intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector comprises the following steps:
1) Manufacturing a gate electrode of the sensor on transparent glass using inkjet printing, and annealing at a temperature of 150 ℃ for 30 minutes;
2) Manufacturing a sol-gel organic gate insulating layer such as PMMA (polymethyl methacrylate) and Su8 by using a spin coating, printing or dispensing method, and covering the organic gate insulating layer on a gate electrode;
3) After alignment by the electrode, continuously manufacturing a source electrode and a drain electrode by using ink-jet printing on the insulating layer, and setting a step temperature on a temperature-regulating heat table for annealing for 30 minutes;
4) The GeSe two-dimensional nano material is uniformly distributed on the device by utilizing spin coating, and the photosensitivity and the absorption coefficient of the GeSe two-dimensional nano layer can be improved after the GeSe two-dimensional nano material is repeated for 2 to 3 times, so that the photoelectric conversion efficiency of the detector is improved; 5) And finally, covering the semiconductor material on the two-dimensional nano material photosensitive layer by utilizing magnetron sputtering, wherein the thickness of the semiconductor layer is controlled to be 60-80nm.
The beneficial effects are that: the intelligent sensing GeSe two-dimensional nano infrared spectrum detector provided by the application uses a sensor array target surface designed by the detector to replace a complex and expensive integrated circuit process to construct a detection target surface of a linear array. Meanwhile, geSe is used as a two-dimensional nano material for the sensor, so that the detection efficiency of the detector in an infrared band is improved, and the problem that the target surface of the sensor formed by other infrared materials is not matched with a silicon-based circuit is solved. Finally, in the aspect of light splitting, the method for splitting the grating used by the traditional sensor is not used any more, and the reconstruction of the optical signals of different wave bands is realized by using machine learning instead, so that the manufacturing cost of the sensor device is reduced. The starting voltage of the device is 3.3v, the detection wave band is infrared, the detection efficiency has stability along with the voltage change, and the detection wavelength range is 650-860nm; the power consumption is as low as 1nw; the detection efficiency EQE is more than 700%.
Drawings
FIG. 1 is a schematic diagram of a GeSe two-dimensional nano infrared spectrum detector with intelligent sensing;
FIG. 2 is a TEM micrograph of a GeSe two-dimensional nano-layer/PbSe semiconductor heterojunction probe channel;
FIG. 3 is a spectrum graph of a GeSe two-dimensional nano infrared spectrum detector reconstruction with intelligent sensing;
FIG. 4 is a graph of the photoelectric conversion of the spectral detector of the present application;
FIG. 5 is a graph of the photoelectric response of the spectral detector of the present application;
reference numerals: the semiconductor device comprises a 1-grid electrode, a 2-insulating layer, a 3-source drain electrode, a 4-GeSe two-dimensional nano material photosensitive layer and a 5-semiconductor active layer.
The specific embodiment is as follows:
the present application is further illustrated below in conjunction with specific embodiments, it being understood that these embodiments are meant to be illustrative of the application and not limiting the scope of the application, and that modifications of the application, which are equivalent to those skilled in the art to which the application pertains, fall within the scope of the application defined in the appended claims after reading the application.
Example 1:
the intelligent sensing GeSe two-dimensional nano infrared spectrum detector device is shown in fig. 1, and comprises a grid electrode 1, an insulating layer 2, a source-drain electrode 3, a GeSe two-dimensional nano material photosensitive layer 4, a semiconductor active layer 5 and a grid electrode which are arranged on a bottom layer, wherein the insulating layer, the source-drain electrode, the GeSe two-dimensional nano material photosensitive layer and the semiconductor active layer are respectively arranged from bottom to top. The grid electrode and the source electrode and the drain electrode can be formed on the substrate by silver ion ink-jet printing or laser etching; the insulating layer can be a solid insulating layer such as silicon dioxide, silicon nitride, aluminum oxide and the like which are deposited by chemical vapor deposition, atomic layer deposition or magnetron sputtering, or can be a sol-gel organic gate insulating layer such as PMMA (polymethyl methacrylate), su8 and the like which are manufactured by a spin coating, printing or dispensing method; the photosensitive layer adopts a novel two-dimensional nano material GeSe, so that the infrared detection efficiency of the detector is improved; the semiconductor active layer may be one of cadmium selenide, lead sulfide, lead oxide, etc., in order to improve the conductivity of the device. The thickness of the insulating layer is 100nm, the thickness of the two-dimensional nano material photosensitive layer is 60nm, the thickness of the semiconductor active layer is 10nm, and the starting voltage of the intelligent sensing GeSe two-dimensional nano infrared spectrum detector device is 3.3v; the power consumption is as low as 1nw; the detection efficiency EQE is more than 700%.
The preparation method of the intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector device comprises the following steps:
1) Manufacturing a gate electrode of the sensor on transparent glass using inkjet printing, and annealing at a temperature of 150 ℃ for 30 minutes;
2) Manufacturing a sol-gel organic gate insulating layer such as PMMA (polymethyl methacrylate) and Su8 by using a spin coating, printing or dispensing method, and covering the organic gate insulating layer on a gate electrode;
3) After passing the calibration, continuously manufacturing a source electrode and a drain electrode on the insulating layer by using ink-jet printing, and setting a step temperature on a temperature-regulating heat table for annealing for 30 minutes;
4) The GeSe two-dimensional nano material is uniformly distributed on the device by utilizing spin coating, and the photosensitivity and the absorption coefficient of the GeSe two-dimensional nano layer can be improved after the GeSe two-dimensional nano material is repeated for 2 to 3 times, so that the photoelectric conversion efficiency of the detector is improved; 5) And finally, covering the semiconductor material on the two-dimensional nano material photosensitive layer by utilizing magnetron sputtering.
The turn-on voltage is 3.3v; the power consumption is as low as 1nw; the detection efficiency EQE is more than 700%.
Example 2:
the intelligent sensing GeSe two-dimensional nano infrared spectrum detector device is shown in fig. 1, and comprises a grid electrode 1, an insulating layer 2, a source-drain electrode 3, a GeSe two-dimensional nano material photosensitive layer 4, a semiconductor active layer 5 and a grid electrode which are arranged on a bottom layer, wherein the insulating layer, the source-drain electrode, the GeSe two-dimensional nano material photosensitive layer and the semiconductor active layer are respectively arranged from bottom to top. The thickness of the insulating layer is 120nm, the thickness of the two-dimensional nano material photosensitive layer is 80nm, the thickness of the semiconductor active layer is 20nm, and the starting voltage of the intelligent sensing GeSe two-dimensional nano infrared spectrum detector device is 3.3v; the power consumption is as low as 1nw; the detection efficiency EQE is more than 700%.
The preparation method of the intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector device comprises the following steps:
1) Manufacturing a gate electrode of the sensor on transparent glass using inkjet printing, and annealing at a temperature of 150 ℃ for 30 minutes;
2) Manufacturing a sol-gel organic gate insulating layer such as PMMA (polymethyl methacrylate) and Su8 by using a spin coating, printing or dispensing method, and covering the organic gate insulating layer on a gate electrode;
3) After passing the calibration, continuously manufacturing a source electrode and a drain electrode on the insulating layer by using ink-jet printing, and setting a step temperature on a temperature-regulating heat table for annealing for 30 minutes;
4) The GeSe two-dimensional nano material is uniformly distributed on the device by utilizing spin coating, and after repeating for 2-3 times, the sensitization and absorption coefficient of the GeSe two-dimensional nano layer can be improved after repeating for 2-3 times, and the photoelectric conversion efficiency of the detector is further improved;
5) And finally, covering the semiconductor material on the two-dimensional nano material photosensitive layer by utilizing magnetron sputtering.
The turn-on voltage is 3.3v; the power consumption is as low as 1nw; the detection efficiency EQE is more than 700%.
Furthermore, the intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector device uses an infrared spectrum current reconstruction method to replace a traditional spectrum detector light splitting method by using a grating, and the working scheme comprises three steps of learning, sampling and reconstructing.
The optical properties of GeSe can be tuned by an external bias displacement field (D) controlled by a voltage applied to the gate electrode. The light response rate (R) may be a function and matrix of the wavelength of the incident light (λ) and the external bias displacement field D.
In the learning process, the continuous response function R (D, lambda) can be discretized into a matrix R D,λ 。R D,λ In response row vectorsBy being displaced in each electric displacement field D i The optical response of a plurality of known incident spectra is measured. And (3) completing the learning process of all n displacement fields to generate a complete n multiplied by n matrix.
In the sampling step, the phase difference between n different displacement fields (D 1 ～D n ) Measuring the photocurrent response of incident light to unknown spectrum to obtain response vector I D . And since the photocurrent (I) depends on the blackbody source temperature T and the spectral response R (λ), at a given displacement D i The photocurrent I (T) is the incident spectral power density and lambda 1 ～λ n The integral of the product of the entire wavelength response,wherein t=t 1 ,T 2 ,…T n The incident power density P (T, λ) depends on the wavelength λ and the temperature T, which can be calculated according to planck's law. When the temperature is highFrom the degrees T1 to Tn, n integral equations can be obtained, which are decomposed into a matrix equation by discretization as follows (1), abbreviated as RXP T,λ ＝I T 。
In the reconstruction process, the response vector ID measured in the sampling step is brought into RxP T,λ ＝I T In the matrix equation (P T,λ From planck's law), the R matrix can be solved, and the spectrum of the incident light can be reconstructed by comparing the response matrix R (D, λ) generated by the learning process.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing has shown and described the basic principles, principal features and advantages of the application. It will be understood by those skilled in the art that the present application is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present application, and various changes and modifications may be made without departing from the spirit and scope of the application, which is defined in the appended claims.
Claims (6)
1. An intelligent sensing GeSe two-dimensional nanometer infrared spectrum detector is characterized in that; the detector substrate is provided with a GeSe two-dimensional nano material photosensitive layer (4), the GeSe two-dimensional nano material photosensitive layer (4) can be prepared by a large-area spin coating process, and a plurality of layers of GeSe two-dimensional nano materials can be continuously coated on the surface of the photosensitive layer to enhance the photoelectric absorption efficiency;
the substrate is sequentially provided with a gate electrode (1), a gate insulating layer (2), a source-drain electrode (3), a GeSe two-dimensional nano material photosensitive layer (4) and a semiconductor active layer (5), wherein the gate electrode is arranged on the bottom layer, the gate insulating layer (2), the source-drain electrode (3), the GeSe two-dimensional nano material photosensitive layer (4) and the semiconductor active layer (5) are sequentially arranged from bottom to top, and the gate electrode (1) is formed by ink-jet printing;
the material of the gate insulating layer (2) is one of silicon dioxide, silicon nitride and aluminum oxide;
the semiconductor active layer (5) is made of one of cadmium selenide, lead sulfide and lead oxide.
2. The intelligent sensing GeSe two-dimensional nano infrared spectrum detector according to claim 1, wherein the detector comprises; the gate insulating layer (2) is formed by chemical vapor deposition, atomic layer deposition or magnetron sputtering processing.
3. The intelligent sensing GeSe two-dimensional nano infrared spectrum detector according to claim 1, wherein: the gate insulating layer (2) is an organic gate insulating layer of PMMA or Su8 sol-gel manufactured by a spin coating, printing or dispensing method.
4. The intelligent sensing GeSe two-dimensional nano infrared spectrum detector, according to claim 1, uses the grid electrode (1) to regulate and control a photosensitive layer/a semiconductor active layer, and the spectrum detector performs light splitting through infrared spectrum current responses and an incident light reconstruction method of different wave bands l, wherein the method comprises three steps of machine learning of the spectrum current responses of different lambda, sampling of characteristic response signals of measured light and reconstruction of the spectrum responses of the measured light.
5. The intelligent sensing GeSe two-dimensional nano infrared spectrum detector according to any one of claims 1-3, wherein the infrared spectrum detector processing comprises the steps of:
1) Manufacturing a gate electrode of the sensor on transparent glass using inkjet printing, and annealing at a temperature of 150 ℃ for 30 minutes;
2) Manufacturing PMMA and Su8 sol-gel organic gate insulating layers by using spin coating, printing or dispensing, and covering the organic gate insulating layers on the gate electrode;
3) Continuously manufacturing a source electrode and a drain electrode by using ink-jet printing on the insulating layer, and setting a step temperature through a temperature-adjusting heat table for annealing for 30 minutes;
4) The GeSe two-dimensional nano material is uniformly distributed on the device by utilizing spin coating, and the photosensitive efficiency of the GeSe two-dimensional nano layer can be improved after repeating for 2-3 times;
5) And finally, covering the semiconductor material on the two-dimensional nano material photosensitive layer by utilizing magnetron sputtering, wherein the thickness of the semiconductor layer is controlled to be 60-80nm.
6. The intelligent sensing GeSe two-dimensional nano infrared spectrum detector is characterized in that a grid electrode (1), a grid insulating layer (2), a source-drain electrode (3), a GeSe two-dimensional nano material photosensitive layer (4) and a semiconductor active layer (5) are sequentially arranged on a substrate, the grid electrode is arranged on a bottom layer, the grid insulating layer (2), the source-drain electrode (3), the GeSe two-dimensional nano material photosensitive layer (4) and the semiconductor active layer (5) are sequentially arranged from bottom to top, and the grid electrode (1) is formed by ink-jet printing.
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| WO2019218002A1 (en) * | 2018-05-14 | 2019-11-21 | The University Of Melbourne | A photodetector |
| CN112864270A (en) * | 2021-03-04 | 2021-05-28 | 南京信息工程大学 | Non-raster quantum dot light spectrum detector with light transistor integrated sensing core |
| CN113140648A (en) * | 2021-04-28 | 2021-07-20 | 东南大学 | Heterojunction semiconductor photoelectric detector and preparation method thereof |
| CN113921628A (en) * | 2021-10-09 | 2022-01-11 | 中国科学院半导体研究所 | Photoelectric device, manufacturing method thereof and polarization imaging device |
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| CN107845687B (en) * | 2017-10-27 | 2021-10-29 | 合肥鑫晟光电科技有限公司 | Thin film transistor, preparation method thereof and electronic equipment |
| KR102496483B1 (en) * | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | Avalanche photodetector and image sensor including the same |
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| CN112864270A (en) * | 2021-03-04 | 2021-05-28 | 南京信息工程大学 | Non-raster quantum dot light spectrum detector with light transistor integrated sensing core |
| CN113140648A (en) * | 2021-04-28 | 2021-07-20 | 东南大学 | Heterojunction semiconductor photoelectric detector and preparation method thereof |
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