CN114706442A - Low-power-consumption band-gap reference circuit - Google Patents
Low-power-consumption band-gap reference circuit Download PDFInfo
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- CN114706442A CN114706442A CN202210378271.5A CN202210378271A CN114706442A CN 114706442 A CN114706442 A CN 114706442A CN 202210378271 A CN202210378271 A CN 202210378271A CN 114706442 A CN114706442 A CN 114706442A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a low-power-consumption band-gap reference circuit, which belongs to the technical field of integrated circuits and comprises PMOS (P-channel metal oxide semiconductor) tubes MP 1-MP 2, resistors R1-R3 and triodes Q1-Q2; the drain end of the PMOS tube MP1 is connected with the first end of the resistor R3, and the gate end of the PMOS tube MP 2; the drain end of the PMOS tube MP2 is connected with the collector electrode of the triode Q2, and the gate end of the PMOS tube MP2 is connected with the drain end of the PMOS tube; the collector of the triode Q1 is connected with the second end of the resistor R3, the base of the triode Q1 is connected with the first end of the resistor R3, and the emitter of the triode Q1 is connected with the first end of the resistor R1; the collector of the triode Q2 is connected with the drain of the PMOS tube MP2, the base is connected with the collector of the triode Q1, and the emitter is connected with the first end of the resistor R2. The circuit multiplexing triodes Q1 and Q2, PMOS tubes MP2 and MP1 and a resistor R3 form a feedback loop to determine the working point of the circuit, so that an additional operational amplifier circuit is omitted, and the area overhead is greatly reduced; because an additional operational amplifier module is omitted and only two current paths from the circuit to the ground exist, the power consumption of the band-gap reference module can be greatly reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a low-power-consumption band-gap reference circuit.
Background
Analog integrated circuits widely employ voltage reference and current reference circuits as reference voltages or currents for a full chip. These reference circuits require little variation in supply voltage, process parameters and temperature drift. The band gap reference source circuit is generally adopted in the industry at present, so that the insensitivity of reference voltage to power supply voltage and process parameters can be realized, the approximate zero temperature drift characteristic of reference output voltage can be realized, and the performance is obviously improved relative to the traditional reference source.
A conventional bandgap reference circuit is shown in fig. 1, wherein Q11 is an NPN transistor with an emitter area a, the base-collector connection of the NPN transistor is equivalent to a diode device, Q12 is an NPN transistor with an emitter area n × a, and the base-collector is also shorted. The collector of the NPN transistor Q12 is connected in series with the resistor R13 and the collector of the NPN transistor Q11 to the negative terminal and the positive terminal of the operational amplifier a11, respectively. The output of the operational amplifier a11 is a bandgap reference voltage output terminal, and is connected to the positive and negative terminals of the operational amplifier a11 through resistors R11 and R12 to form feedback.
The principle of the band-gap reference circuit is that two voltages with positive and negative temperature coefficients are added to obtain a zero temperature coefficient reference. Firstly, by utilizing the 'virtual short' characteristic of the operational amplifier, the voltages of a node X and a node Y are approximately equal, and according to the kirchhoff voltage law, the method comprises the following steps:
VBE，Q11＝VBE，Q12+I×R13 (1)
wherein VBE，Q11Base (collector) -emitter voltage, V, of Q11BE，Q12The base (collector) -emitter voltage of Q12, I is the current through resistor R13.
The PN junction voltage satisfies the following relationship:
VTis a physical constant for thermal voltage. I.C. AoFor forward conduction of current to the PN junction, IsThe saturation current is the device parameter of the PN junction. Substituting the relationship of equation (2) into equation (1) can result in:
VTthe temperature coefficient of the resistor R13 is ignored as a physical constant of the thermal voltage. The current flowing through R13 is a positive temperature coefficient current.
The bandgap reference output is therefore:
since the base-emitter voltage of the triode is a negative temperature coefficient, the bandgap reference voltage with zero temperature coefficient can be obtained by reasonably configuring the relationship between the first term and the second term in the equation (4).
Power consumption of circuit IGNDComprises the following steps:
therefore, the power consumption of the traditional bandgap reference circuit comprises two parts: the power consumption of the reference voltage generation module and the power consumption of the operational amplifier. In order to ensure that the voltages of two points of the node X, Y are accurately equal, an operational amplifier A11 is arranged in the circuit, the circuit area is increased, and the circuit structure is not compact; because extra operational amplifiers are needed to ensure the circuit performance, extra power consumption is needed to be consumed by the circuit, the power consumption of the circuit cannot be effectively reduced, and the circuit is not suitable for low-power-consumption application.
Disclosure of Invention
The invention aims to provide a low-power-consumption band-gap reference circuit to solve the problems in the background art.
In order to solve the technical problem, the invention provides a low-power-consumption band-gap reference circuit which comprises PMOS tubes MP 1-MP 2, resistors R1-R3 and triodes Q1-Q2;
the drain end of the PMOS tube MP1 is connected with the first end of the resistor R3, and the gate end is connected with the gate end of the PMOS tube MP 2;
the drain end of the PMOS tube MP2 is connected with the collector electrode of the triode Q2, and the gate end of the PMOS tube MP2 is connected with the drain end of the PMOS tube;
the collector of the triode Q1 is connected with the second end of the resistor R3, the base of the triode Q1 is connected with the first end of the resistor R3, and the emitter of the triode Q1 is connected with the first end of the resistor R1;
the collector of the triode Q2 is connected with the drain of the PMOS tube MP2, the base is connected with the collector of the triode Q1, and the emitter is connected with the first end of the resistor R2.
Optionally, the second end of the resistor R2 is connected to the first end of the resistor R1, and the second segment of the resistor R1 is grounded.
Optionally, a source end of the PMOS transistor MP1 and a source end of the PMOS transistor MP2 are commonly connected to a power supply VDD.
Optionally, the PMOS transistor MP1 and the PMOS transistor MP2 are respectively used as active loads of the transistor Q1 and the transistor Q2, and the sizes of the devices are the same.
The low-power-consumption band-gap reference circuit provided by the invention comprises PMOS tubes MP 1-MP 2, resistors R1-R3 and triodes Q1-Q2; the drain end of the PMOS tube MP1 is connected with the first end of the resistor R3, and the gate end is connected with the gate end of the PMOS tube MP 2; the drain end of the PMOS tube MP2 is connected with the collector electrode of the triode Q2, and the gate end of the PMOS tube MP2 is connected with the drain end of the PMOS tube; the collector of the triode Q1 is connected with the second end of the resistor R3, the base of the triode Q1 is connected with the first end of the resistor R3, and the emitter of the triode Q1 is connected with the first end of the resistor R1; the collector of the triode Q2 is connected with the drain of the PMOS tube MP2, the base is connected with the collector of the triode Q1, and the emitter is connected with the first end of the resistor R2.
Compared with the prior art, the invention has the following advantages:
(1) the circuit multiplexing triodes Q1 and Q2, PMOS tubes MP2 and MP1 and a resistor R3 form a feedback loop to determine the working point of the circuit, so that an additional operational amplifier circuit is omitted, and the area overhead is greatly reduced;
(2) because an additional operational amplifier module is omitted and the circuit has only two current paths to the ground, the power consumption of the band-gap reference module can be greatly reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional bandgap reference circuit;
fig. 2 is a schematic diagram of a low power consumption bandgap reference circuit provided by the present invention.
Detailed Description
The low-power bandgap reference circuit according to the present invention is further described in detail with reference to the accompanying drawings and the specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
Example one
The invention provides a low-power-consumption band-gap reference circuit, which has a structure shown in figure 2 and comprises PMOS (P-channel metal oxide semiconductor) tubes MP 1-MP 2, resistors R1-R3 and triodes Q1-Q2; the drain end of the PMOS tube MP1 is connected with the first end of the resistor R3, and the gate end of the PMOS tube MP 2; the drain end of the PMOS tube MP2 is connected with the collector electrode of the triode Q2, and the gate end of the PMOS tube MP2 is connected with the drain end of the PMOS tube; the collector of the triode Q1 is connected with the second end of the resistor R3, the base of the triode Q1 is connected with the first end of the resistor R3, and the emitter of the triode Q1 is connected with the first end of the resistor R1; the collector of the triode Q2 is connected with the drain of the PMOS tube MP2, the base is connected with the collector of the triode Q1, and the emitter is connected with the first end of the resistor R2. The second end of the resistor R2 is connected to the first end of the resistor R1, and the second end of the resistor R1 is grounded. The source end of the PMOS transistor MP1 and the source end of the PMOS transistor MP2 are commonly connected to a power supply VDD.
In the present invention, the emitter of transistor Q1 is connected to R1 to ground, and the emitter of transistor Q2 is connected in series with R2, R1 to ground. The collector of the transistor Q1 is connected to one end of the resistor R3, and is connected to its own base via the other end of the resistor R3. The PMOS tubes MP1 and MP2 are used as active loads of the triodes Q1 and Q2, and the sizes of the devices are the same.
The positive temperature coefficient current I in the circuit satisfies the following equation (assuming that the base current of transistor Q1 is much less than the collector current):
i is the positive temperature coefficient current in the circuit, VTIs a thermal voltage, Δ VBEIs the difference between the base-emitter voltage of transistor Q1 and the base-emitter voltage of transistor Q2, VBE1Is the base-emitter voltage, V, of transistor Q1BE2The base-emitter voltage of the transistor Q2, n is the ratio of the emitter area of the transistor Q2 to the emitter area of the transistor Q1, and the equation is obtained by transforming the two sides:
final bandgap reference voltage output VOUTComprises the following steps:
meanwhile, the power consumption of the whole circuit is as follows:
by comparing equation (5) with equation (9), it is found that the bandgap reference of the present invention eliminates an additional operational amplifier module, and the power consumption is significantly reduced compared with the conventional structure.
The above description is only for the purpose of describing the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are intended to fall within the scope of the appended claims.
Claims (4)
1. A low-power-consumption band-gap reference circuit is characterized by comprising PMOS tubes MP 1-MP 2, resistors R1-R3 and triodes Q1-Q2;
the drain end of the PMOS tube MP1 is connected with the first end of the resistor R3, and the gate end of the PMOS tube MP 2;
the drain end of the PMOS tube MP2 is connected with the collector electrode of the triode Q2, and the gate end of the PMOS tube MP2 is connected with the drain end of the PMOS tube;
the collector of the triode Q1 is connected with the second end of the resistor R3, the base of the triode Q1 is connected with the first end of the resistor R3, and the emitter of the triode Q1 is connected with the first end of the resistor R1;
the collector of the triode Q2 is connected with the drain of the PMOS tube MP2, the base is connected with the collector of the triode Q1, and the emitter is connected with the first end of the resistor R2.
2. The low power consumption bandgap reference circuit of claim 1, wherein a second terminal of said resistor R2 is connected to a first terminal of said resistor R1, and a second terminal of said resistor R1 is connected to ground.
3. The low-power-consumption bandgap reference circuit as claimed in claim 2, wherein a source terminal of the PMOS transistor MP1 and a source terminal of the PMOS transistor MP2 are commonly connected to a power supply VDD.
4. The low-power-consumption bandgap reference circuit as claimed in claim 1, wherein said PMOS transistor MP1 and said PMOS transistor MP2 are respectively used as active loads of said transistor Q1 and said transistor Q2, and the device sizes are the same.
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