CN114695664A - Flexible photoelectric device and manufacturing method - Google Patents

Flexible photoelectric device and manufacturing method Download PDF

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Publication number
CN114695664A
CN114695664A CN202011585647.7A CN202011585647A CN114695664A CN 114695664 A CN114695664 A CN 114695664A CN 202011585647 A CN202011585647 A CN 202011585647A CN 114695664 A CN114695664 A CN 114695664A
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electrode
insulating substrate
conductive
light
hole
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韩云飞
张�浩
潘伟
王振国
闫翎鹏
龚超
骆群
林剑
马昌期
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a flexible photoelectric device and a manufacturing method thereof. The flexible optoelectronic device comprises: the first electrode, the functional layer, the second electrode and the third electrode are sequentially arranged on the light-transmitting insulating substrate along a set direction; the first electrode is a transparent electrode, the third electrode is electrically contacted with the first electrode, the third electrode can be electrically connected with the first electrode or the second electrode of another flexible photoelectric device through a conductive channel, the conductive channel comprises more than one through hole penetrating through the light-transmitting insulating substrate along a set direction, and the through hole is filled with a conductive substance. According to the technical scheme, the plurality of flexible photoelectric devices can be simply and quickly connected in series or in parallel only by utilizing the conductive adhesive and the like, the laser etching process and the like are avoided, the manufacturing cost of the device is reduced, the yield of the device is improved, and in addition, the performance of the device can be effectively improved by arranging the third electrode around the transparent electrode.

Description

Flexible photoelectric device and manufacturing method
Technical Field
The invention relates to a photoelectric device, in particular to a flexible photoelectric device and a manufacturing method thereof.
Background
The flexible photoelectric device, such as a flexible organic solar cell, has the advantages of softness, low cost, large-area manufacturing and the like, and has wide application prospects in multiple fields of photovoltaic building integration, portable charging equipment and the like. However, in order to realize practical application of the flexible organic solar cell, a process for manufacturing a large-area thin film battery module must be developed. At present, a method for realizing a thin film battery module is to adopt patterning preparation to connect a top electrode of a front junction battery with a bottom electrode of a rear junction battery, and the process needs to obtain a high geometric factor, wherein the area control of the connection part of the front junction battery and the rear junction battery is very important, and great difficulty is brought in the actual preparation process. In general, the use of laser etching methods allows high geometric factors to be obtained, which has the disadvantage of requiring high manufacturing equipment, and in particular the use of femtosecond laser equipment for selective processing of the active layer, which is costly.
Disclosure of Invention
The invention mainly aims to provide a flexible photoelectric device and a manufacturing method thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a flexible photoelectric device, which comprises a first electrode, a functional layer and a second electrode, wherein the first electrode, the functional layer and the second electrode are sequentially arranged on a light-transmitting insulating substrate along a set direction; further, the flexible photoelectric device further comprises a third electrode arranged on the light-transmitting insulating substrate, the third electrode is electrically contacted with the first electrode, the third electrode can be electrically connected with the first electrode or the second electrode of another flexible photoelectric device through a conductive channel, the conductive channel comprises more than one through hole penetrating through the light-transmitting insulating substrate along a set direction, and conductive substances are filled in the through holes.
In some embodiments, the third electrode is one or more, wherein the one or more third electrodes are distributed around the first electrode, and/or wherein at least a partial area of the one or more third electrodes is surrounded by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is covered by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is superimposed on the first electrode.
In some embodiments, the source of the conductive material includes silver paste or conductive paste, and is not limited thereto.
The embodiment of the invention also provides a method for manufacturing the flexible photoelectric device, which comprises the steps of sequentially manufacturing a first electrode, a functional layer and a second electrode on the first surface of the light-transmitting insulating substrate; further, the manufacturing method further comprises the following steps:
arranging a third electrode on the first surface of the light-transmitting insulating substrate, and enabling the at least partial area to be electrically contacted with the first electrode;
processing and forming more than one through hole penetrating through the light-transmitting insulating substrate along the thickness direction in the corresponding area of the light-transmitting insulating substrate and the third electrode, applying conductive paste on the first surface or the second surface opposite to the first surface of the light-transmitting insulating substrate, and filling part of the conductive paste into the through hole, so that a conductive channel is formed in the light-transmitting insulating substrate, wherein the conductive channel can electrically connect the third electrode with the first electrode or the second electrode of another flexible photoelectric device.
In some embodiments, the manufacturing method specifically comprises:
processing the through hole in the area corresponding to the third electrode on the light-transmitting insulating substrate;
applying a conductive paste comprising a first conductive material on the second side of the light-transmitting insulating substrate, and allowing part of the conductive paste to enter the through hole and reach a set position, wherein the selected position is located between two ends of the through hole;
and forming a third electrode on the first surface of the light-transmitting insulating substrate by using a second conductive material, and enabling part of the second conductive material to enter the through hole to form a second conductor, wherein the second conductor is electrically combined with the first conductor in the through hole, and the first conductor is formed by the conductive paste entering the through hole, so that a conductive channel is formed in the light-transmitting insulating substrate.
In some embodiments, the manufacturing method further comprises: and contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible photoelectric device.
Compared with the prior art, according to the technical scheme of the embodiment of the invention, the series connection or parallel connection of a plurality of flexible photoelectric devices can be simply and quickly realized by using the silver paste, the conductive adhesive and the like, and the use of a laser etching process and the like is avoided, so that the manufacturing cost of the device is reduced, the yield of the device is improved, and in addition, the third electrode is arranged around the transparent electrode, so that the third electrode has more excellent conductivity and can be used as the outer frame of the device, the charge collection efficiency can be effectively improved, and the performance of the device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic view of a process for manufacturing a flexible solar cell according to embodiment 1 of the present invention;
fig. 2 is a top view of a flexible solar cell in example 1 of the present invention;
fig. 3 is a schematic view of a process for manufacturing a flexible solar cell in example 2 of the present invention;
fig. 4 is an assembly schematic view of a flexible solar cell module according to embodiment 2 of the present invention;
fig. 5 is an assembly view of another flexible solar cell module according to embodiment 2 of the present invention;
fig. 6 is a bottom view of a flexible solar cell in example 3 of the present invention;
fig. 7 is a schematic structural diagram of a flexible solar cell in embodiment 4 of the present invention;
fig. 8 is a schematic structural diagram of a flexible solar cell in embodiment 5 of the present invention.
Detailed Description
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
An aspect of an embodiment of the present invention provides a flexible optoelectronic device, including a first electrode, a functional layer, and a second electrode sequentially disposed on a light-transmissive insulating substrate along a set direction, wherein the first electrode is a transparent electrode; furthermore, the flexible photoelectric device further comprises a third electrode arranged on the light-transmitting insulating substrate, the third electrode is electrically contacted with the first electrode, the third electrode can be electrically connected with the first electrode or the second electrode of another flexible photoelectric device through a conductive channel, the conductive channel comprises more than one through hole penetrating through the light-transmitting insulating substrate along a set direction, and a conductive substance is filled in the through hole.
In some embodiments, the third electrode is one or more.
Further, one or more third electrodes are distributed around the first electrode.
Further, at least a partial region of one or more third electrodes is surrounded by the first electrode.
Further, at least a partial region of one or more third electrodes is covered by the first electrode.
Further, at least partial areas of one or more third electrodes are overlapped on the first electrode.
For example, the one or more third electrodes are disposed around the first electrode.
In some embodiments, the third electrode is a conductive line, and the third electrode is disposed around or semi-around the second electrode.
In some embodiments, the third electrode is generally frame-shaped, and at least an inner edge of the frame-shape is continuously in electrical contact with the first electrode.
In some embodiments, the width of the conductive lines is less than or equal to 5mm, preferably less than or equal to 1 mm.
In some embodiments, the height of the protrusions at the highest point of the third electrode is less than 5 μm, preferably less than 1 μm, compared to the first electrode.
In some embodiments, the conductive lines have an equivalent sheet resistance of ≦ 5 Ω/sq, preferably ≦ 1 Ω/sq.
In some embodiments, the through hole continuously penetrates the third electrode and the light-transmitting insulating substrate in a set direction.
In some embodiments, the source of the conductive substance comprises silver paste or conductive paste, or may be a suitable type of conductive ink and conductive substance-containing fluid, etc. known in the art.
In some embodiments, the transparent electrode includes, but is not limited to, a silver nanowire electrode, ITO, AZO, carbon nanotube film, graphene film, and the like.
In some embodiments, the light-transmissive insulating substrate may be made of organic, inorganic or organic/inorganic composite material, such as flexible transparent film made of Polyester (PET), Polyurethane (PU), Polyimide (PI), or glass.
In some embodiments, the second electrode includes any one or a combination of a metal electrode, a conductive polymer electrode, and a metal oxide electrode, and is not limited thereto, and for example, may be formed of various types of metals having good conductivity, such as Au, Ag, and Cu.
In some embodiments, the flexible optoelectronic device includes, but is not limited to, a flexible thin film light emitting diode, a flexible thin film photovoltaic cell, or a flexible thin film photodetector, and the like.
Taking a flexible solar cell as an example, the functional layer may be an active layer, and may further include an electron transport layer, a hole transport layer, an interface modification layer, and the like. The materials of these structural layers may be known in the art.
Another aspect of the embodiments of the present invention provides a method for manufacturing the flexible optoelectronic device, including the steps of sequentially manufacturing a first electrode, a functional layer, and a second electrode on a first surface of a light-transmissive insulating substrate; further, the manufacturing method further comprises the following steps:
arranging a third electrode on the first surface of the light-transmitting insulating substrate, and enabling at least a partial area of the third electrode to be in electrical contact with the first electrode;
processing and forming more than one through hole penetrating through the light-transmitting insulating substrate along the thickness direction in the corresponding area of the light-transmitting insulating substrate and the third electrode, applying conductive paste on the first surface or the second surface opposite to the first surface of the light-transmitting insulating substrate, and filling part of the conductive paste into the through hole, so that a conductive channel is formed in the light-transmitting insulating substrate, wherein the conductive channel can electrically connect the third electrode with the first electrode or the second electrode of another flexible photoelectric device.
Wherein, partial conductive paste can be filled into the through holes under the action of gravity, or other external forces can be utilized to fill the conductive paste into the through holes, but the former mode is preferably adopted.
In some embodiments, the manufacturing method specifically includes: and arranging a third electrode on the first surface of the light-transmitting insulating base, and processing the third electrode and the insulating substrate so as to form the through hole which continuously penetrates through the third electrode and the insulating substrate, wherein the through hole is completely filled with the conductive slurry.
In some embodiments, the manufacturing method specifically includes:
processing the through hole in the area corresponding to the third electrode on the light-transmitting insulating substrate;
applying a conductive paste comprising a first conductive material on a second side of the light-transmissive insulating substrate and allowing a portion of the conductive paste to enter the via and reach a set position, the selected position being between the two ends of the via, wherein the conductive paste entering the via is capable of forming a first electrical conductor;
forming a third electrode on the first surface of the light-transmitting insulating substrate by using a second conductive material, and enabling part of the second conductive material to enter the through hole to form a second conductor;
and electrically combining the second conductor with the first conductor to form the conductive channel in the light-transmitting insulating substrate.
In the above embodiment, one or more through holes are processed on the light-transmitting insulating substrate, and properties such as viscosity of the conductive paste are regulated, so that the conductive paste can automatically enter the through holes but does not leak out of the through holes under the action of gravity (or other external force) after being applied to the second surface of the light-transmitting insulating substrate, on one hand, a conductor can be formed in the subsequent process and matched with a second conductive material entering the through holes to form a conductive channel penetrating through the light-transmitting insulating substrate, on the other hand, the conductive paste can be prevented from being exposed from the through holes to pollute the second surface of the light-transmitting insulating substrate, and the like.
The method for processing the through hole on the light-transmitting insulating substrate or the light-transmitting insulating substrate and the third electrode may be known, and for example, the method may be a mechanical processing method, a laser ablation method, or other physical or chemical methods. However, if the machining or laser ablation is adopted, in many cases, an annular protrusion may be formed at the edge of the machined through hole.
Further, the shape and size of the through hole can be arbitrarily selected according to actual requirements, and for example, the through hole can be circular, polygonal or other irregular shapes.
In some embodiments, the area of the opening of the through hole on the first surface or the second surface of the light-transmitting insulating substrate is 0.13mm2Below, preferably 0.03mm2The following.
In some embodiments, the perimeter of the opening of the through hole on the first side or the second side of the light-transmitting insulating substrate is 10-800 μm, preferably 60-400 μm.
In some embodiments, the protrusion height of the through hole relative to the first surface or the second surface at the edge of the opening of the first surface or the second surface of the light-transmitting insulating substrate is less than 5 μm, preferably less than 1 μm.
In some embodiments, the manufacturing method further comprises: and contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible photoelectric device.
In some embodiments, the conductive paste comprises silver paste, conductive glue, conductive ink of a suitable type known in the art, or other fluid containing conductive substances. Under certain conditions (such as heating, natural drying or light irradiation), part of volatile components (solvents, diluents and the like) in the conductive paste can be removed by volatilization, or a rapid crosslinking reaction can occur due to the light irradiation, so that the conductive paste is converted into a conductive solid. Alternatively, some of the components in these conductive pastes may react with substances in the environment or other components in the conductive pastes, thereby converting the conductive pastes into conductive solids.
In some embodiments, the conductive paste has a viscosity of 20-100000cP, preferably 100-10000 cP.
In some embodiments, the conductive paste is applied on the surface of the insulating substrate or the third electrode by any one or a combination of printing, coating or dispensing, but not limited thereto.
In some embodiments, the manner of forming the third electrode on the first side of the insulating substrate by the second conductive material includes a physical and/or chemical deposition manner, for example, any one or a combination of a printing manner, a coating manner, a dispensing manner, a vacuum evaporation manner, or a magnetron sputtering manner, and is not limited thereto. For example, the third electrode may be formed by any one of inkjet printing, air jet printing, gravure printing, screen printing, flexographic printing, and mask spraying.
In some embodiments, the thickness of the third electrode is greater than the protrusion height of the edge portion of the opening of the through hole on the first surface of the insulating substrate relative to the second surface.
In some embodiments, the third electrode covers the opening of the through hole on the first surface of the insulating substrate and extends from the edge of the opening radially outward by more than 20 μm, preferably more than 50 μm.
In some embodiments, the material of the third electrode includes various types of metal or nonmetal materials with good conductivity, such as Au, Ag, Cu, and the like.
In the above embodiment of the invention, by forming the conductive channel and arranging the third electrode in the light-transmitting insulating substrate, the series connection or the parallel connection of a plurality of flexible photoelectric devices can be simply and quickly realized only by using the conductive adhesive and the like, so that the laser etching process and the like are avoided, the manufacturing cost of the device is reduced, and the yield of the device is improved.
In the above embodiment of the present invention, the third electrode with a lower resistance is disposed on the periphery of the transparent electrode as a conductive path, and a unique "short-circuit effect" of the circuit itself is utilized, so that a "city-around high speed" with low cost and high performance is provided for a large-area transparent electrode on the premise of not changing the conductivity of the transparent electrode itself, thereby effectively improving the overall performance (including but not limited to charge collection efficiency, etc.) of the product, and the process flow is simple, the cost is low, the application range is wide, and the process is favorable for assembling a photoelectric device module (for example, a solar cell module).
The technical solution of the present invention will be described in more detail with reference to several embodiments and the accompanying drawings. It is to be noted that, unless otherwise specified, the raw materials, chemical reagents, equipment, and the like used in the following examples are commercially available, and operations such as printing, spraying, spin coating, magnetron sputtering, and the like may be performed according to a method known in the art.
Embodiment 1 a method for manufacturing a flexible solar cell, as shown in fig. 1, includes the following steps:
(1) a transparent silver nanowire electrode 102 (i.e., the first electrode) was formed on the front surface 1011 of a Polyimide (PI) film 101 having a thickness of about 300 μm.
(2) A silver wire electrode 103 (i.e., the aforementioned third electrode) is formed on the front surface of the PI film 101 by means of screen printing or the like, and the electrode 103 is in the form of a conductive wire stripe, is disposed around the silver nanowire electrode 102, and is in contact with or overlaps the silver nanowire electrode 102 at an edge portion. The silver wire electrode 103 may be provided in the form of a conductive line, and the width thereof may be set to 5mm or less, preferably 1mm or less, and the equivalent sheet resistance may be 5 Ω/sq or less, preferably 1 Ω/sq or less. And the silver wire electrode 103 has a peak protrusion height of less than 5 micrometers, preferably less than 1 micrometer, compared to the silver nanowire electrode 102.
(3) A plurality of through holes 104 are formed in the silver wire electrode 103 by machining, laser ablation, or the like, and each through hole 104 continuously penetrates the PI film 101 and the silver wire electrode 103 in the thickness direction of the PI film 101. Each through-hole 104 may be circular, polygonal, or other irregular shape. Wherein the circumference of the single through hole can be 10-50 μm, and the opening area on the front surface 1011 or the back surface 1012 of the PI film is 0.03mm2The following. Furthermore, the protrusion height of each through hole on the edge of the opening on the surface of the silver wire electrode 103 and the back surface of the PI film can be controlled to be less than 1 μm.
(4) The PI film 101 is inverted, conductive adhesive (or conductive silver paste) 105 with the viscosity of 20-80cP is coated on the area, where the through holes are distributed, on the back surface 1012 of the PI film, so that part of the conductive adhesive is filled into each through hole under the action of gravity, and after the conductive adhesive is dried, a conductive channel penetrating through the PI film 101 can be formed.
(5) An electron transport layer 106 (e.g., a zinc oxide thin film layer, having a thickness of about 50nm), and an active layer 107 (e.g., PM) are sequentially formed on the silver nanowire electrode 102 in a manner known in the art6∶Y6Active layer with thickness of about 100nm), hole transport layer 108 (e.g., M0O)3Thin film, about 10nm thick), and a metal top electrode 109 (i.e., the aforementioned second electrode, such as metal Al, about 100nm thick), thereby forming a flexible solar cell 110. A top view of the flexible solar cell 110 is shown in fig. 2.
Embodiment 2 is a method for manufacturing a flexible solar cell, as shown in fig. 3, which includes the following steps:
(1) an ITO transparent conductive layer 202 (i.e., the first electrode) is formed on the front surface 2011 of a Polyester (PET) film 201 having a thickness of about 150 μm;
(2) a plurality of through holes 203 are processed on the PET film, each through hole vertically penetrates through the PET film, and each through hole can be in a circular shape, a polygonal shape or other irregular shapes. Wherein the perimeter of the single through hole is about 500-800 μm, and the opening area on the front surface or the opening area on the back surface of the PET film is 0.13mm2The protruding height of each through hole on the edge of the opening on the front 2011 and the back 2012 of the PET film is less than 5 μm;
(3) the Ag electrode 204 (i.e., the third electrode) is formed by performing magnetron sputtering Ag in the area where the through holes are distributed on the front surface 2011 of the PET film, the thickness of the Ag electrode 204 is greater than the protrusion height of each through hole at the edge of the opening of the front surface 2011 of the PET film, the deposition area of the Ag electrode 204 covers and exceeds the edge of the opening of each through hole at the front surface of the PET film by more than 50 μm, and a local area of the Ag electrode 204 further enters each through hole to form a second conductor. The Ag electrode 204 is a conductive line stripe, and is disposed around the ITO transparent conductive layer 202, and contacts or overlaps with the ITO transparent conductive layer 202 at an edge portion. The Ag electrode 204 may be in the form of a conductive line, and the width thereof may be set to 5mm or less, preferably 1mm or less, and the equivalent sheet resistance may be 5 Ω/sq or less, preferably 1 Ω/sq or less. And the Ag electrode 204 has a peak protrusion height of less than 5 microns, preferably less than 1 micron, compared to the ITO transparent conductive layer 202.
(4) The PET film 201 is inverted, and the conductive adhesive (or conductive silver paste) 205 with the viscosity of 80000-100000cP is coated in the area where the through holes are distributed on the back surface 2012 of the PET film, so that part of the conductive silver paste automatically enters each through hole under the action of gravity, but automatically stops at a certain distance from the front surface 2011 of the PET film, and is dried into a solid due to volatilization of the solvent to form a first conductor, and the first conductor is electrically combined with the second conductor, so that a conductive channel penetrating through the PET film is formed.
(5) An electron transport layer 206 (e.g., a thin zinc oxide film layer with a thickness of about 50nm), and an active layer 207 (e.g., PM) are sequentially formed on the ITO transparent conductive layer 202 in a manner known in the art6∶Y6Active layer with thickness of about 100nm), hole transport layer 208 (e.g., MoO)3A thin film, approximately 10nm thick), and a metal top electrode 209 (i.e., the aforementioned second electrode, such as metal Al, approximately 100nm thick), thereby forming a flexible solar cell 210.
In this embodiment, the step (4) may be performed first, and then the step (3) may be performed.
The flexible solar cell 210 is easily used as a cell unit to be matched with other flexible solar cells to form a solar cell module, and no additional operations such as laser ablation are required.
For example, as shown in fig. 4, the two flexible solar cells 210 'can be connected in parallel by coating a conductive adhesive on the back surface of the two flexible solar cells 210 at the positions corresponding to the conductive channels and electrically connecting the conductive adhesive with the ITO transparent conductive layer of the other flexible solar cell 210'.
Alternatively, as shown in fig. 5, the two flexible solar cells 210 'can be connected in series by coating a conductive adhesive on the back surface of the two flexible solar cells 210 at the corresponding positions of the conductive channels and electrically connecting the conductive adhesive with the metal top electrode of the other flexible solar cell 210'.
Example 3 a flexible solar cell was fabricated in substantially the same manner as in example 1, except that: the third electrode is of a grid type, wherein part of grids are distributed in the first electrode. A bottom view of the flexible solar cell 310 is shown in fig. 6. Wherein 301 is a PI film, 302 is a first electrode, 303 is a third electrode, and 304 is a through hole.
Example 4: a flexible solar cell was fabricated in substantially the same manner as in example 1, except that: referring to fig. 7, the third electrode 103 is stacked on the first electrode 102.
Example 5: a flexible solar cell was fabricated in substantially the same manner as in example 1, except that: referring to fig. 8, a local area of the third electrode 103 is covered by the first electrode 102'.
It is to be understood that the above-described embodiments are part, and not all, of the present invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Claims (11)

1. The utility model provides a flexible photoelectric device, includes and sets gradually first electrode, functional layer and the second electrode on the printing opacity insulating substrate along setting for the direction, wherein first electrode is transparent electrode, its characterized in that still including setting up third electrode on the printing opacity insulating substrate, third electrode and first electrode electrical contact, the third electrode can be connected with another flexible photoelectric device's first electrode or second electrode electricity through electrically conductive channel, electrically conductive channel includes and runs through along setting for the direction more than one through-hole of printing opacity insulating substrate, and the through-hole intussuseption is filled with conducting material.
2. The flexible optoelectronic device of claim 1, wherein: the third electrode is one or more, wherein the one or more third electrodes are distributed around the first electrode, and/or wherein at least a partial area of the one or more third electrodes is surrounded by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is covered by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is superimposed on the first electrode.
3. The flexible optoelectronic device of claim 1, wherein: the through hole continuously penetrates through the third electrode and the light-transmitting insulating substrate along a set direction.
4. The flexible optoelectronic device of claim 1, wherein: the source of the conductive substance comprises silver paste or conductive adhesive.
5. The flexible optoelectronic device of claim 1, wherein: the third electrode is a conductive line, and the third electrode surrounds or semi-surrounds the second electrode.
6. The flexible optoelectronic device of claim 5, wherein: the width of the conductive line is less than or equal to 5mm, preferably less than or equal to 1 mm; and/or the height of the protrusions of the highest point of the third electrode compared to the first electrode is less than 5 μm, preferably less than 1 μm; and/or the equivalent square resistance of the conductive line is less than or equal to 5 omega/sq, preferably less than or equal to 1 omega/sq.
7. The flexible optoelectronic device of claims 1-6, wherein: the flexible photoelectric device comprises a flexible thin film light emitting diode, a flexible thin film photovoltaic cell or a flexible thin film photodetector.
8. A method of fabricating a flexible optoelectronic device according to any one of claims 1 to 7, comprising the steps of sequentially fabricating a first electrode, a functional layer, and a second electrode on a first side of a light-transmissive insulating substrate; the manufacturing method is characterized by further comprising the following steps:
arranging a third electrode on the first surface of the light-transmitting insulating substrate, and enabling the third electrode to be in electrical contact with the first electrode;
processing and forming more than one through hole penetrating through the light-transmitting insulating substrate along the thickness direction in the corresponding area of the light-transmitting insulating substrate and the third electrode, applying conductive paste on the first surface or the second surface opposite to the first surface of the light-transmitting insulating substrate, and filling part of the conductive paste into the through hole, so that a conductive channel is formed in the light-transmitting insulating substrate, wherein the conductive channel can electrically connect the third electrode with the first electrode or the second electrode of another flexible photoelectric device.
9. The manufacturing method according to claim 8, characterized by specifically comprising: and arranging a third electrode on the first surface of the light-transmitting insulating base, and processing the third electrode and the insulating substrate so as to form the through hole which continuously penetrates through the third electrode and the insulating substrate, wherein the through hole is completely filled with the conductive slurry.
10. The manufacturing method according to claim 8, characterized by specifically comprising:
processing the through hole in the area corresponding to the third electrode on the light-transmitting insulating substrate;
applying a conductive paste comprising a first conductive material on a second side of the light-transmissive insulating substrate and allowing a portion of the conductive paste to enter the via and reach a set position, the selected position being between the two ends of the via, wherein the conductive paste entering the via is capable of forming a first electrical conductor;
forming a third electrode on the first surface of the light-transmitting insulating substrate by using a second conductive material, and enabling part of the second conductive material to enter the through hole to form a second conductor;
and electrically combining the second conductor with the first conductor to form the conductive channel in the light-transmitting insulating substrate.
11. The method of manufacturing according to claim 10, further comprising: and contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible photoelectric device.
CN202011585647.7A 2020-12-28 2020-12-28 Flexible photoelectric device and manufacturing method Pending CN114695664A (en)

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