CN114695584A - Superlattice nanowire, photoelectric detector and preparation method thereof - Google Patents

Superlattice nanowire, photoelectric detector and preparation method thereof Download PDF

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CN114695584A
CN114695584A CN202111587749.7A CN202111587749A CN114695584A CN 114695584 A CN114695584 A CN 114695584A CN 202111587749 A CN202111587749 A CN 202111587749A CN 114695584 A CN114695584 A CN 114695584A
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superlattice
nanowire
superlattice nanowire
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张诗豪
李绿周
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Sun Yat Sen University
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    • H—ELECTRICITY
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract

The invention discloses a superlattice nanowire, a photoelectric detector and a preparation method thereof, wherein the preparation method of the superlattice nanowire comprises the following steps: proportioning, grinding and uniformly mixing cadmium sulfide solid powder and tin dioxide powder to obtain precursor mixed powder; cleaning the silicon substrate; placing the precursor mixed powder in a central heating temperature area of the tube furnace; and obtaining the superlattice nanowire on the silicon substrate. The superlattice nanowire alternately formed by two materials is prepared, and the photoelectric detector based on the superlattice nanowire is prepared, so that a built-in electric field is formed in the superlattice nanowire, photo-generated carriers are effectively separated, and compared with the photoelectric detector based on the one-dimensional nanowire, the photoelectric detector with high-performance self-supplied polarization achieves the photoelectric detection performance, achieves higher responsivity, detection rate and polarization degree, and can be widely applied to the field of photoelectronic devices.

Description

Superlattice nanowire, photoelectric detector and preparation method thereof
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a superlattice nanowire, a photoelectric detector and a preparation method thereof.
Background
The intensity, spectral and spatial distribution of the light source are three main parameters commonly used in the field of conventional optical communications. Polarization is another important information of light, so detecting polarization information including degree of polarization, azimuth angle of polarization, ellipticity, and direction of circular polarization can greatly enrich the application of light sensing. The fabrication of anisotropic semiconductor structures, including anisotropic crystal structures and anisotropic morphology, is critical to the development of linearly polarized photodetectors. Semiconductor Nanowires (NWs) have well-defined crystal and morphological anisotropy and have proven to be good candidates for linear polarization detection by light emission, absorption and photoconduction. In particular, semiconductor nanowires with chip-level polarization sensitivity have great potential for future applications in electronic circuits and optical chips.
One-dimensional (1D) nanostructures with modulating composition and microstructure have gained great interest in the past few years due to their attractive chemical properties and size, shape, material-related properties, particularly semiconductor superlattice nanowires with periodic composition modulation along the axial direction. To date, several well-established chemical vapor deposition techniques have been successfully used to synthesize superlattice structures. Researchers have influenced the growth of superlattice nanowires by periodically changing the reaction atmosphere of the vapor-liquid-solid (VLS) growth mechanism. Superlattice nanowires are mostly used for adjusting the electronic band position of products, but no relevant report is provided on the application of modulating light propagation. At present, due to the limitation of a one-dimensional nano structure on a superlattice nanowire, a photoelectric detector based on the superlattice nanowire still has the problems of low responsivity, low detectivity and low polarization degree.
Disclosure of Invention
In order to solve the technical problems, embodiments of the present invention provide a superlattice nanowire, a photodetector, and a method for manufacturing the superlattice nanowire.
The first part of the embodiment of the invention adopts the technical scheme that:
a method for preparing superlattice nano-wires comprises the following steps:
proportioning, grinding and uniformly mixing cadmium sulfide solid powder and tin dioxide powder to obtain precursor mixed powder;
cleaning the silicon substrate;
placing the precursor mixed powder in a central heating temperature area of the tube furnace;
and obtaining the superlattice nanowire on the silicon substrate.
As an optional embodiment, the mass ratio of the cadmium sulfide solid powder to the tin dioxide powder is 10:1 to 12: 1.
As an alternative embodiment, before the step of placing the precursor mixed powder in the central heating temperature zone of the tube furnace, the method further comprises the following steps:
and exhausting the air in the quartz tube of the tube furnace through the mixed gas of hydrogen and argon.
As an alternative embodiment, obtaining the superlattice nanowire on the silicon substrate includes:
placing the silicon substrate in a downstream deposition zone of a central heating temperature zone;
raising the temperature in the tubular furnace to 900-950 ℃, and keeping the gas flow rate of 20-30sccm for reaction;
and after the reaction is finished, cooling the temperature to room temperature to obtain the superlattice nanowire on the silicon substrate.
The second part of the embodiment of the invention adopts the technical scheme that:
a superlattice nanowire prepared by the above-mentioned method for preparing a superlattice nanowire.
The third part of the embodiment of the invention adopts the technical scheme that:
a photodetector, comprising:
a substrate;
the superlattice nanowire is arranged on the substrate;
and the electrodes are arranged at two ends of the superlattice nanowire.
As an alternative embodiment, the superlattice nanowire has a length of 100 μm to 900 μm and a diameter of 500nm to 5 μm.
As an alternative embodiment, the electrode is a metal electrode, and the metal electrode is a chromium/gold electrode.
In an alternative embodiment, the thickness of the chromium in the metal electrode is 8nm to 12nm, and the thickness of the gold in the metal electrode is 45nm to 55 nm.
The fourth part of the embodiment of the invention adopts the technical scheme that:
a method for preparing a photoelectric detector comprises the following steps:
cleaning the substrate;
picking up the superlattice nanowire as claimed in claim 5 by a probe and placing the superlattice nanowire on the substrate;
heating the substrate and the superlattice nanowires;
and preparing electrodes at two ends of the superlattice nanowire to finish the preparation of the photoelectric detector.
According to the superlattice nanowire, the photoelectric detector and the preparation method thereof, the superlattice nanowire formed by two materials alternately is prepared, and the photoelectric detector based on the superlattice nanowire is prepared, so that a built-in electric field is formed in the superlattice nanowire, photo-generated carriers are effectively separated, and compared with the photoelectric detector based on the one-dimensional nanowire, the photoelectric detection performance of self-supplied polarization with high performance is realized, and higher responsivity, detection rate and polarization degree are realized.
Drawings
FIG. 1 is a flow chart of a method for fabricating superlattice nanowires in accordance with an embodiment of the present invention;
FIG. 2 is a topographical view of a superlattice nanowire in accordance with an embodiment of the present invention;
FIG. 3 is a topographical view of a photodetector according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating a photodetector according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating the basic photoelectric performance of a photodetector according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating a polarized photoelectric performance of a photodetector according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," "third," and "fourth," etc. in the description and claims of this application and in the accompanying drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
Superlattice nanowires are mostly used for adjusting the electronic band position of products, but no relevant report is provided on the application of modulating light propagation. At present, due to the limitation of a one-dimensional nano structure on a superlattice nanowire, a photoelectric detector based on the superlattice nanowire still has the problems of low responsivity, low detectivity and low polarization degree. Therefore, the embodiment of the invention provides a superlattice nanowire, a photoelectric detector and a preparation method thereof, the superlattice nanowire formed by two materials alternately is prepared, and the photoelectric detector based on the superlattice nanowire is prepared, so that a built-in electric field is formed in the superlattice nanowire, photo-generated carriers are effectively separated, and compared with the photoelectric detector based on the one-dimensional nanowire, the photoelectric detection performance of self-supplied polarization with high performance is realized, and higher responsivity, detection rate and polarization degree are realized.
As shown in fig. 1, the embodiment of the present invention first proposes a method for preparing a superlattice nanowire, which includes the following steps S101 to S104:
s101, proportioning, grinding and uniformly mixing cadmium sulfide solid powder and tin dioxide powder to obtain precursor mixed powder;
in the embodiment of the invention, the mass ratio of the cadmium sulfide solid powder to the tin dioxide powder is 10:1-12: 1.
S102, cleaning the silicon substrate;
specifically, the silicon substrate was ultrasonically cleaned with acetone, ethanol, and deionized water, respectively. And drying the silicon substrate by a nitrogen gun after the silicon substrate is cleaned.
S103, placing the precursor mixed powder in a central heating temperature area of the tube furnace;
and before the precursor mixed powder is placed in a central heating temperature area of the tube furnace, air in a quartz tube of the tube furnace is exhausted through mixed gas of hydrogen and argon. In the embodiment of the invention, the mixed gas (8-10%) of hydrogen and argon is used for exhausting for 1-2h through a quartz tube.
Specifically, in the embodiment of the invention, after the air in the quartz tube is exhausted, the precursor mixed powder is poured into the ceramic boat, and the ceramic boat bearing the precursor mixed powder is placed in the quartz tube at the central heating temperature area of the tube furnace.
And S104, obtaining the superlattice nanowire on the silicon substrate.
S104 may be further divided into the following steps S1041-S1043:
s1041, placing the silicon substrate in a downstream deposition area of a central heating temperature area;
specifically, a silicon substrate is placed on a porcelain boat, and the porcelain boat bearing the silicon substrate is placed in a downstream deposition area which is 12cm-13cm away from a central heating temperature area.
Step S1042, raising the temperature in the tubular furnace to 900-950 ℃, and keeping the gas flow rate of 20-30sccm for reaction;
particularly, SnS is synthesized into CdS/CdS through the reaction of a growth mechanism of Sn catalytic chemical vapor deposition in a tubular furnace2Superlattice nanowires.
And S1043, cooling the temperature to room temperature after the reaction is finished, and obtaining the superlattice nanowire on the silicon substrate.
In the embodiment of the invention, the temperature is reduced to room temperature through natural cooling, and finally CdS/SnS is prepared on the silicon substrate2Superlattice nanowires.
Next, based on the method for preparing a superlattice nanowire shown in fig. 1, an embodiment of the present invention provides a superlattice nanowire, as shown in fig. 2.
The superlattice nanowire is prepared by the preparation method of the superlattice nanowire in the steps S101-S104.
Fig. 2(a) is an SEM image of the superlattice nanowire according to the embodiment of the present invention, and the inset in fig. 2(a) is an SEM magnified image of both ends of the superlattice nanowire. As can be seen from the inset, the superlattice nanowire provided by the embodiment of the invention has a solid hexagonal section, and further proves that CdS/SnS2Wurtzite structure of superlattice nanowires. The Sn metal ball at the other end of the superlattice nanowire in the embodiment of the invention represents a growth mechanism of Sn catalytic chemical vapor deposition in the preparation method of the superlattice nanowire in the embodiment of the invention. FIG. 2(b) is CdS/CdS: SnS2Bright field pattern of optical microscopy of superlattice nanowires. As can be seen from the figure, the longitudinal CdS yellow transparent part of the one-dimensional nanowire is transparent to CdS SnS2And the superlattice structure is formed by partial interval distribution.
By CdS and CdS SnS2Superlattice nano-wire formed by two materials alternately on the contact surface of the two materialsA heterojunction will be formed.
Further, based on the superlattice nanowire shown in fig. 2, an embodiment of the present invention provides a photodetector, and referring to fig. 3, the photodetector includes:
a substrate;
the superlattice nanowire shown in fig. 2 disposed on the substrate;
and the electrodes are arranged at two ends of the superlattice nanowire.
Wherein, in the embodiment of the invention, the substrate is Si/SiO2A substrate. Because the Si substrate is a highly doped material and has strong conductivity, a layer of insulating SiO is arranged on the Si substrate2A substrate. SiO 22The thickness of the substrate is 280-320 nm.
As can be seen from the foregoing, the superlattice nanowire is formed by CdS and CdS/SnS2SnS/CdS formed by two materials alternately2Superlattice nanowires, with a heterojunction present at the interface of the two materials. It will be appreciated that SnS is due to CdS and CdS2The conduction band and valence band positions of the two materials are different, and an energy band heterostructure is formed. At the same time, SnS is used as CdS and CdS2SnS is the CdS of the heterojunction region to realize thermal balance after forming heterojunction2The hole in CdS moves to CdS, and the electron in CdS moves to CdS SnS2Moving so that the energy band of CdS is bent upward in the heterojunction region, and finally CdS and CdS SnS2Are at the same level. While in CdS and CdS SnS2Built-in electric fields are formed on the contact surfaces of the two materials, and photogenerated carriers are rapidly separated under the potential barrier difference between the heterojunction. The electrons and holes are transported to electrodes at both ends by a built-in electric field, thereby generating a photocurrent. Thus, SnS due to CdS and CdS2The existence of heterojunction and built-in electric field between the two materials is based on CdS/CdS: SnS2Compared with a photoelectric detector based on a one-dimensional nanowire, the photoelectric detector based on the superlattice nanowire has higher light responsivity and higher detection rate.
As an alternative embodiment, the superlattice nanowire has a length of 100 μm to 900 μm and a diameter of 500nm to 5 μm.
In an alternative embodiment, the electrode is a metal electrode, and the metal electrode is a chromium/gold electrode.
As an alternative embodiment, the thickness of chromium in the metal electrode is 8nm to 12nm, and the thickness of gold in the metal electrode is 45nm to 55 nm.
Finally, based on the photodetector shown in fig. 3, an embodiment of the present invention provides a method for manufacturing a photodetector, as shown in fig. 4, the method includes the following steps S401 to S404:
s401, cleaning the substrate;
specifically, the substrate includes a silicon substrate and a silicon dioxide substrate disposed on the silicon substrate. Firstly, respectively cleaning a silicon substrate by using acetone, ethanol and deionized water, and blow-drying by using a nitrogen gun after cleaning. Then, a silicon oxide film is deposited on the silicon substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to form a silicon oxide substrate, thereby completing the substrate processing.
S402, picking out the superlattice nanowire (shown in FIG. 2) in the embodiment of the invention through a probe, and placing the superlattice nanowire on the substrate;
s403, heating the substrate and the superlattice nanowire;
specifically, the substrate and the superlattice nanowire are heated on a hot stage at the temperature of 80-100 ℃ for 1-5min, so that CdS/SnS2Superlattice nano-wire and Si/SiO2The substrates are better bonded together.
S404, preparing electrodes at two ends of the superlattice nanowire to finish the preparation of the photoelectric detector.
Specifically, a maskless ultraviolet exposure photoetching technology and an electron beam evaporation process are adopted to process CdS/SnS2Metal electrodes (chromium/gold electrodes) are prepared at both ends of the superlattice nanowires.
Referring to fig. 5, a performance characteristic diagram of the photodetector manufactured by the method for manufacturing a photodetector (steps S401-S404) described in fig. 4 under the condition of illumination at 405nm and 0V bias voltage according to the embodiment of the present invention. As can be seen from FIG. 5, the photodetector according to the embodiment of the present invention has the characteristics of stable light response performance, fast response speed and high sensitivity under 405nm illumination.
The optical responsivity and the detection rate are two important parameters for representing the performance of the photoelectric detector, and the calculation formula is as follows:
Figure BDA0003428205900000071
Figure BDA0003428205900000072
wherein R is responsivity, IphIs photocurrent, P is optical power, and S is effective illumination area (4 pi cm)2)，D*For detectivity, A is the effective area (123 μm)2) Q is the amount of charge, IdarkIs a dark current.
The photoelectric detector of the embodiment of the invention shows 900mA/W light responsivity and 10 mA/W under the illumination of 405nm12Detection rate of Jones. SnS based on CdS/CdS of the embodiment of the invention2The photoelectric detector of the superlattice nanowire has wide application prospect in a high-performance self-powered visible photoelectric detector.
Fig. 6 is a graph showing the photoresponse curve of the photodetector prepared by the method for preparing a photodetector illustrated in fig. 4 (steps S401 to S404) under different polarized lights (405nm) and the fitted curve of the photocurrent intensity varying with the polarized light according to the embodiment of the present invention. As can be seen from FIG. 6(a), the CdS/SnS-based embodiments of the present invention2The photodetector of the superlattice nanowire shows obvious change along with the change of polarized light under the conditions of 405nm illumination and 0V bias voltage; fig. 6(b) is a fitted curve of the photocurrent intensity as a function of polarized light extracted from fig. 6 (a). As shown in FIG. 6(b), under the condition of 405nm illumination and 0V bias, the CdS/SnS-based quantum dot structure of the embodiment of the invention2Photocurrent anisotropy of photodetectors of superlattice nanowiresThe ratio reaches 1.9, and is obviously improved compared with a photoelectric detector based on a one-dimensional nanowire, namely the polarization ratio is obviously improved.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A method for preparing superlattice nano-wires is characterized by comprising the following steps:
proportioning, grinding and uniformly mixing cadmium sulfide solid powder and tin dioxide powder to obtain precursor mixed powder;
cleaning the silicon substrate;
placing the precursor mixed powder in a central heating temperature area of the tube furnace;
and obtaining the superlattice nanowire on the silicon substrate.
2. The method for preparing a superlattice nanowire as claimed in claim 1, wherein the mass ratio of the cadmium sulfide solid powder to the tin dioxide powder is 10:1-12: 1.
3. The method for preparing superlattice nanowire as claimed in claim 1, wherein before the step of placing the precursor mixed powder in the central heating temperature region of the tube furnace, the method further comprises the following steps:
and exhausting the air in the quartz tube of the tube furnace through the mixed gas of hydrogen and argon.
4. The method of claim 1, wherein obtaining the superlattice nanowire on the silicon substrate comprises:
placing the silicon substrate in a downstream deposition zone of a central heating temperature zone;
raising the temperature in the tubular furnace to 900-950 ℃, and keeping the gas flow rate of 20-30sccm for reaction;
and after the reaction is finished, cooling the temperature to room temperature to obtain the superlattice nanowire on the silicon substrate.
5. Superlattice nanowire produced by a method for producing superlattice nanowire as claimed in any one of claims 1 to 4.
6. A photodetector, comprising:
a substrate;
the superlattice nanowires of claim 5 disposed on the substrate;
and the electrodes are arranged at two ends of the superlattice nanowire.
7. The photodetector of claim 6, wherein the superlattice nanowire has a length of 100 μm to 900 μm and a diameter of 500nm to 5 μm.
8. A photodetector according to claim 6 wherein the electrode is a metal electrode and the metal electrode is a chromium/gold electrode.
9. The photodetector of claim 8, wherein the thickness of the chromium in the metal electrode is 8nm to 12nm, and the thickness of the gold in the metal electrode is 45nm to 55 nm.
10. A method for manufacturing a photodetector, comprising the steps of:
cleaning the substrate;
picking out the superlattice nanowire as claimed in claim 5 by a probe and placing the superlattice nanowire on the substrate;
heating the substrate and the superlattice nanowires;
and preparing electrodes at two ends of the superlattice nanowire to finish the preparation of the photoelectric detector.
CN202111587749.7A 2021-12-23 2021-12-23 Superlattice nanowire, photoelectric detector and preparation method thereof Pending CN114695584A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021104527A1 (en) * 2019-11-29 2021-06-03 中国科学技术大学 Photoelectrochemical photosensor and preparation method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021104527A1 (en) * 2019-11-29 2021-06-03 中国科学技术大学 Photoelectrochemical photosensor and preparation method therefor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GUANGYANG GOU ET AL: "High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires", 《NANOSCALE》, vol. 8, 5 July 2016 (2016-07-05), pages 14580 - 14586 *
GUANGYANG GOU ET AL: "High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires", 《NANOSCALE》, vol. 8, no. 30, 5 October 2016 (2016-10-05), pages 1 - 17 *
张文圣: "CdS超晶格纳米线与超长碳线的制备与性质研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》, no. 7, pages 16 - 47 *

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