CN114695064A - Cleaning method of reaction chamber and semiconductor process method - Google Patents
Cleaning method of reaction chamber and semiconductor process method Download PDFInfo
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- CN114695064A CN114695064A CN202210309917.4A CN202210309917A CN114695064A CN 114695064 A CN114695064 A CN 114695064A CN 202210309917 A CN202210309917 A CN 202210309917A CN 114695064 A CN114695064 A CN 114695064A
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Abstract
The embodiment of the application relates to a cleaning method of a reaction chamber and a semiconductor process method. The cleaning method is used for cleaning a reaction chamber, a carbon material layer is formed on the inner wall of the reaction chamber, and a medium material layer is attached to the surface of the carbon material layer, and comprises the following steps: and introducing cleaning gas into the reaction chamber, wherein the cleaning gas, the carbon material layer and the medium material layer react to form a volatile product so as to remove the medium material layer. The carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the purpose that the medium material layer on the inner wall of the reaction chamber falls into the reaction chamber to form particle contamination is eliminated.
Description
Technical Field
The embodiment of the application relates to the technical field of semiconductors, in particular to a cleaning method of a reaction chamber and a semiconductor process method.
Background
The capacitor device is an important component of the memory device, and the typical capacitor device mainly adopts TiN/ZrO2a/TiN sandwich structure, wherein metal material TiN is used as an upper electrode plate and a lower electrode plate, and high dielectric constant material ZrO2As a dielectric material between the upper and lower electrode plates.
In the process of preparing capacitor parts, it is found that when a titanium nitride film used as an upper electrode plate is deposited, a part of zirconium dioxide material overflows from the surface of a wafer to form zirconium dioxide coatings which are difficult to remove and mixed with titanium nitride to form a mixed coating of zirconium dioxide and titanium nitride and adhere to the inner wall of a deposition chamber, which reduces the adhesiveness of titanium nitride on the inner wall of the deposition chamber, so that the mixed coating of zirconium dioxide and titanium nitride falls from the inner wall of the chamber to form particle contamination in the deposition chamber, and further influences the performance of a memory device.
Disclosure of Invention
The application provides a cleaning method of a reaction chamber and a semiconductor process method, which can reduce the influence of falling of a zirconium dioxide and titanium nitride mixed coating on the performance of a memory device.
The application provides a cleaning method of a reaction chamber, which is used for cleaning the reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber, a medium material layer is attached to the surface of the carbon material layer, and the cleaning method comprises the following steps:
and introducing cleaning gas into the reaction chamber, wherein the cleaning gas, the carbon material layer and the medium material layer react to form volatile products so as to remove the medium material layer.
In one embodiment, the material of the dielectric material layer comprises zirconium dioxide, and the cleaning gas comprises chlorine.
In one embodiment, the inner wall of the reaction chamber comprises at least one of a side wall of the reaction chamber, a bottom of the reaction chamber, and a top of the reaction chamber.
In one embodiment, the thickness of the carbon material layer is 500 nm-5 um.
In one embodiment, the reaction temperature of the cleaning gas and the carbon material layer and the medium material layer is 400-600 ℃, and the reaction pressure of the cleaning gas and the carbon material layer and the medium material layer is 0-20 torr.
In one embodiment, an electrode material layer is further formed on the surface of the carbon material layer, the cleaning gas includes a mixed gas of a first cleaning gas and a second cleaning gas, the mixed gas is introduced into the reaction chamber, and the first cleaning gas in the mixed gas reacts with the electrode material layer to remove the electrode material layer; and the second cleaning gas in the mixed gas reacts with the carbon material layer and the medium material layer to generate the volatile product so as to remove the medium material layer.
In one embodiment, the volume percentage of the second cleaning gas in the cleaning gas is 5% to 20%.
In one embodiment, the gas flow rate of the mixed gas is 100sccm to 1000 sccm; and in the process of introducing the mixed gas into the reaction chamber, the temperature of the reaction chamber is 400-600 ℃, and the pressure of the reaction chamber is 0-20 torr.
In one embodiment, an electrode material layer is further formed on the surface of the carbon material layer, and the cleaning gas comprises a first cleaning gas and a second cleaning gas; the step of introducing a cleaning gas into the reaction chamber comprises:
introducing the first cleaning gas into the reaction chamber, wherein the first cleaning gas reacts with the electrode material layer to remove the electrode material layer;
and introducing the second cleaning gas into the reaction chamber, wherein the second cleaning gas reacts with the carbon material layer and the medium material layer to generate the volatile product so as to remove the medium material layer.
In one embodiment, the gas flow rate of the first cleaning gas is 100sccm to 1000 sccm; the gas flow of the second cleaning gas is 100 sccm-1000 sccm; the reaction temperature of the first cleaning gas and the electrode material layer is 100-800 ℃, and the reaction pressure of the first cleaning gas and the electrode material layer is 0-100 torr; the reaction temperature of the second cleaning gas and the carbon material layer and the medium material layer is 400-600 ℃, and the reaction pressure of the second cleaning gas and the carbon material layer and the medium material layer is 0-20 torr.
In one embodiment, the reaction temperature of the first cleaning gas and the electrode material layer and the reaction temperature of the second cleaning gas and the carbon material layer and the medium material layer are different.
In one embodiment, the material of the dielectric material layer comprises zirconium dioxide, and the material of the electrode material layer comprises titanium nitride; the first cleaning gas comprises chlorine trifluoride and the second cleaning gas comprises chlorine gas.
The application also provides a semiconductor process method, which is executed in the reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
providing a substrate and placing the substrate in the reaction chamber;
forming a dielectric layer on the substrate, wherein a dielectric material layer is attached to the surface of the carbon material layer in the process of forming the dielectric layer;
cleaning the reaction chamber by using the cleaning method of any one of the above-mentioned methods.
In one embodiment, the semiconductor process further includes: repeating the steps for N times, wherein N is an integer greater than or equal to 2.
The application also provides a semiconductor process method, which is executed in the reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
providing a substrate and placing the substrate in the reaction chamber;
forming a lower electrode on the substrate;
forming a dielectric layer on the surface of the lower electrode;
forming an upper electrode on the surface of the dielectric layer; the lower electrode, the dielectric layer and the upper electrode jointly form a capacitor device, an electrode material layer is attached to the surface of the carbon material layer in the process of forming the lower electrode and/or the process of forming the upper electrode, and a dielectric material layer is attached to the surface of the carbon material layer in the process of forming the dielectric layer;
cleaning the reaction chamber by using the cleaning method of any one of the above-mentioned methods.
In one embodiment, the semiconductor processing method further comprises: repeating the steps M times, wherein M is an integer greater than or equal to 2.
The cleaning method of the reaction chamber is used for cleaning the reaction chamber, a carbon material layer is formed on the inner wall of the reaction chamber, and a medium material layer is attached to the surface of the carbon material layer, and the cleaning method comprises the following steps: and introducing cleaning gas into the reaction chamber, wherein the cleaning gas, the carbon material layer and the medium material layer react to form volatile products so as to remove the medium material layer. The carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the purpose that the medium material layer on the inner wall of the reaction chamber falls into the reaction chamber to form particle contamination is eliminated.
The semiconductor process method is executed in a reaction chamber, and a carbon material layer is formed on the inner wall of the reaction chamber. The carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the aims of eliminating the problem that the medium material layer on the inner wall of the reaction chamber drops to the substrate in the reaction chamber to form particle contamination and further influencing the performance of a semiconductor device formed on the substrate are fulfilled.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or related technologies of the present application, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a portion of a reaction chamber according to an embodiment;
FIG. 2 is a schematic view of a portion of a reaction chamber in another embodiment;
FIG. 3 is a schematic flow chart illustrating the introduction of a purge gas into the reaction chamber according to an embodiment;
FIG. 4 is a schematic flow chart diagram illustrating a semiconductor processing method according to one embodiment;
FIG. 5 is a flow chart illustrating a semiconductor processing method according to another embodiment.
Description of reference numerals:
102. an inner wall; 104. a layer of carbon material; 106. a dielectric material layer; 108. a layer of electrode material.
Detailed Description
To facilitate an understanding of the embodiments of the present application, the embodiments of the present application will be described more fully below with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. The embodiments of the present application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiments of this application belong. The terminology used herein in the description of the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the embodiments of the present application, it is to be understood that the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on methods or positional relationships shown in the drawings, and are only used for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and be operated, and thus, should not be construed as limiting the embodiments of the present application.
It will be understood that the terms "first," "second," and the like as used herein may be used herein to describe various gases, but these gases are not limited by these terms. These terms are used only to distinguish a first gas from another gas. For example, the first cleaning gas may be referred to as a second cleaning gas, and similarly, the second cleaning gas may be referred to as a first cleaning gas, without departing from the scope of the present application. The first cleaning gas and the second cleaning gas are both cleaning gases, but are not the same cleaning gas.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. In the description of the present application, "a number" means at least one, such as one, two, etc., unless specifically limited otherwise.
The typical cleaning method of the reaction chamber is to introduce ClF into the reaction chamber under low pressure3Gas to remove a metal adhesion layer (e.g., TiN adhesion layer) on the inner wall of the reaction chamber, but ClF3 gas cannot remove a dielectric adhesion layer (e.g., ZrO) on the inner wall of the reaction chamber2Adhesive layer), the medium adhesive layer that remains on the reaction chamber inner wall accumulates gradually, not only can drop to the reaction chamber and form the granule and stain, still can increase the frequency that the reaction chamber maintained (the frequency of PM), reduces reaction chamber's utilization ratio.
Fig. 1 is a partial schematic view of a reaction chamber in an embodiment, and in order to solve the above problem, in this embodiment, the present application provides a method for cleaning a reaction chamber, for cleaning the reaction chamber, as shown in fig. 1, an inner wall 102 of the reaction chamber is formed with a carbon material layer 104, a surface of the carbon material layer 104 is attached with a dielectric material layer 106, and the method for cleaning includes: a cleaning gas is introduced into the reaction chamber, and the cleaning gas, the carbon material layer 104 and the dielectric material layer 106 react to form a volatile product, so as to remove the dielectric material layer 106. The reaction chamber refers to a process chamber that needs cleaning, such as a chamber for depositing a dielectric material layer, a chamber for depositing an electrode material layer, and the like. It will be appreciated that the carbon material layer 104 needs to adhere to the inner wall 102 of the reaction chamber and that there is good adhesion between the carbon material layer 104 and the dielectric material layer 106 to avoid particle contamination caused by the adhesion problem of the carbon material layer 104 or the dielectric material layer 106 falling off into the reaction chamber. The cleaning method of the reaction chamber occurs between two deposition processes carried out in the reaction chamber or after the deposition process is carried out in the reaction chamber, and it can be understood that the material of the dielectric material layer attached to the surface of the carbon material layer can be the same as the material deposited in the reaction chamber, that is, the dielectric material layer attached to the surface of the carbon material layer is the process material layer for carrying out the deposition process in the reaction chamber; the material of the dielectric material layer attached to the surface of the carbon material layer can also be different from the material deposited in the reaction chamber, namely, the dielectric material layer attached to the surface of the carbon material layer overflows from the surface of the wafer in the reaction chamber during the deposition process in the reaction chamber. The cleaning gas introduced into the reaction chamber reacts with the carbon material layer 104 on the inner wall of the reaction chamber and the medium material layer 106 on the surface of the carbon material layer 104 to form volatile products, so that the purposes of removing the medium material layer 106, improving and purifying the environment in the reaction chamber, reducing the maintenance (PM) frequency of the reaction chamber and eliminating the phenomenon that the medium material layer 106 on the inner wall of the reaction chamber drops into the reaction chamber to form particle contamination are achieved.
According to the cleaning method of the reaction chamber, the carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the purpose that the medium material layer on the inner wall of the reaction chamber falls into the reaction chamber to form particle contamination is achieved.
In one embodiment, the inner wall 102 of the reaction chamber comprises at least one of a side wall of the reaction chamber, a bottom of the reaction chamber, and a top of the reaction chamber. It is understood that the formation of the carbon material layer on the inner wall of the reaction chamber occurs before the corresponding deposition process of the process wafer is performed in the reaction chamber, i.e., the carbon material layer is already formed on the inner wall of the reaction chamber before the corresponding deposition process of the process wafer is performed in the reaction chamber.
In one embodiment, the carbon material layer 104 comprises a diamond-like coating. The diamond-like coating has stable quality and good adhesion with metal materials (such as TiN), and can reduce the risk that the metal materials (electrode material layers) attached to the inner wall of the reaction chamber fall into the reaction chamber to form particle contamination.
In one embodiment, after the reaction chamber is serviced, a layer of carbon material is formed on the inner wall 102 of the reaction chamber using a chemical vapor deposition process. It is understood that, at this time, the sidewall of the reaction chamber, the bottom of the reaction chamber, and the top of the reaction chamber are formed with the carbon material layer.
In one embodiment, after the reaction chamber maintenance, a layer of carbon material is formed on the inner wall 102 of the reaction chamber by a physical vapor deposition process (e.g., an ion plating process). It is understood that, at this time, the sidewall of the reaction chamber, the bottom of the reaction chamber, and the top of the reaction chamber are formed with the carbon material layer.
In one embodiment, during the maintenance of the reaction chamber, the spare part at the top of the reaction chamber is replaced by a new spare part with a carbon material layer formed on the surface. It is understood that, at this time, the top of the reaction chamber is formed with a carbon material layer. In one embodiment, a layer of carbon material 104 of a certain thickness remains on the inner wall of the reaction chamber during maintenance of the reaction chamber. By this arrangement, the problem of insufficient carbon material layer 104 during the reaction between the dielectric material layer 106 on the surface of the carbon material layer 104 and the cleaning gas can be avoided.
In one embodiment, the inner wall 102 of the reaction chamber has a layer of carbon material remaining before the layer of carbon material is formed on the inner wall 102 of the reaction chamber. That is, when the maintenance of the reaction chamber is performed, the carbon material layer on the inner wall of the reaction chamber is not treated.
In one embodiment, the inner wall 102 of the reaction chamber is free of carbon material layer residue before the carbon material layer is formed on the inner wall 102 of the reaction chamber. That is, when the maintenance of the reaction chamber is performed, the carbon material layer on the inner wall of the reaction chamber needs to be removed. With this arrangement, the problem of the thickness unevenness (thickness unevenness) of the carbon material layer 104 on the inner wall 102 of the reaction chamber can be avoided.
In one embodiment, the reaction temperature of the cleaning gas with the carbon material layer 104 and the dielectric material layer 106 is 400-600 ℃, for example, the reaction temperature may be 400 ℃, 430 ℃, 450 ℃, 470 ℃, 490 ℃, 500 ℃, 550 ℃, 570 ℃, 600 ℃, etc. The reaction pressure of the cleaning gas and the carbon material layer 104 and the dielectric material layer 106 is 0torr to 20torr, for example, the reaction pressure may be 0torr, 5torr, 7torr, 9torr, 10torr, 15torr, 17torr, 19torr, 20torr, etc.
In one embodiment, the material of the dielectric material layer 106 includes zirconium dioxide, and the cleaning gas includes chlorine. The medium material layer 106 on the surface of the carbon material layer 104 is removed by introducing chlorine gas into the reaction chamber, in the process, the carbon material layer 104 on the inner wall 102 of the reaction chamber becomes thinner gradually, and the volatile product generated by the reaction is discharged out of the reaction chamber as waste gas, wherein the chemical equation of the reaction of the cleaning gas with the carbon material layer and the medium material layer is as follows: 2ZrO2+3C+4Cl2(g)→2ZrCl4(g) + CO2(g) +2CO (g). In table one, comparative examples 1 to 2 and examples 1 to 3 show that after the reaction chamber was cleaned at different temperatures for t hours, the residual dielectric material layer in the reaction chamber, the thickness of the carbon material layer consumed for each cleaning, and the number of times the carbon material layer having the same thickness can be used for cleaning, when the reaction temperature is too low, the dielectric material layer in the reaction chamber cannot completely react with the cleaning gas, the dielectric material layer in the reaction chamber cannot be completely removed, and at this time, the reaction chamber was cleaned completelyThe inner part has residual dielectric material layer; when the reaction temperature is too high, the medium material layer in the reaction chamber reacts violently with the cleaning gas, and no medium material layer remains in the reaction chamber, namely, the medium material layer on the surface of the carbon material layer completely reacts with the cleaning gas within a certain temperature range without residue; H1-H5 indicate the thickness of the carbon material layer consumed for each cleaning, wherein H5>H4>H3>H2>H1, when the reaction temperature is too low, the medium material layer in the reaction chamber can not completely react with the cleaning gas, and the thickness of the consumed carbon material layer is small; when the reaction temperature is too high, the medium material layer in the reaction chamber reacts violently with the cleaning gas, and the damage to the carbon material layer is large, namely within a certain temperature range, the higher the reaction temperature is, the larger the thickness of the consumed carbon material layer is; P1-P5 show the number of times a layer of carbon material of the same thickness can be used for cleaning, wherein P1>P2>P3>P4>P5, i.e. the higher the reaction temperature, the greater the thickness of the carbon material layer consumed and the fewer the number of cleaning cycles within a certain temperature range; it can be understood that, under the condition that the thickness of the carbon material layer on the inner wall of the reaction chamber and the cleaning time are not changed, the higher the reaction temperature is, the less the residual of the carbon material layer surface medium material layer is, the higher the proportion of carbon monoxide in the generated volatile product is, the greater the thickness of the consumed carbon material layer is, the fewer the number of cleaning cycles is (the number of cleaning cycles before two times of reaction chamber maintenance cannot be guaranteed), and the higher the frequency of reaction chamber maintenance (PM) is; the lower the reaction temperature, the more the dielectric material layer remains on the surface of the carbon material layer, the lower the proportion of carbon monoxide in the volatile product produced, the smaller the thickness of the consumed carbon material layer, the relatively smaller the number of cleaning cycles, and the higher the risk of particle contamination of the reaction chamber, and therefore, the reaction temperature of the cleaning gas with the carbon material layer 104 and the dielectric material layer 106 needs to be within a specific temperature range.
| Reaction temperature/. degree.C | ZrO2Residue is remained | Thickness of C | Number of washes | |
| Comparative example 1 | 300 | Has residue | H1 | P1 |
| Example 1 | 400 | Has no residue | H2 | P2 |
| Example 2 | 500 | Has no residue | H3 | P3 |
| Example 3 | 600 | Has no residue | H4 | P4 |
| Comparative example 2 | 700 | Has no residue | H5 | P5 |
Watch 1
In one embodiment, the thickness of the carbon material layer 104 is 500 nm-5 um, for example, the thickness of the carbon material layer 104 can be 500nm, 600nm, 800nm, 900nm, 1.0um, 1.5um, 1.7um, 1.9um, 2.0um, 2.5um, 3.0um, 4.0um, 4.7um, 5.0um, etc. In practical application, the thickness of the carbon material layer 104 may be set according to the thickness of the dielectric material layer 106 on the inner wall of the reaction chamber and the number of times of cleaning between two times of reaction chamber maintenance (PM), the thickness of the carbon material layer 104 is too small, the dielectric material layer 106 on the surface of the carbon material layer 104 cannot completely react with the carbon material layer 104 and the cleaning gas, and the problem that the dielectric material layer 106 remains on the inner wall 102 of the reaction chamber may occur; the carbon material layer 104 has an excessive thickness, and the carbon material layer 104 remaining on the inner wall of the reaction chamber during the maintenance of the reaction chamber is too thick, which increases the production cost.
Fig. 2 is a partial schematic view of a reaction chamber in another embodiment, as shown in fig. 2, in one embodiment, an electrode material layer 108 is further formed on a surface of the carbon material layer 104, the cleaning gas includes a mixed gas of a first cleaning gas and a second cleaning gas, the mixed gas is introduced into the reaction chamber, and the first cleaning gas in the mixed gas reacts with the electrode material layer 108 to remove the electrode material layer 108; the second cleaning gas in the mixed gas reacts with the carbon material layer 104 and the dielectric material layer 106 to generate the volatile product, so as to remove the dielectric material layer 106. By introducing the mixed gas of the first cleaning gas and the second cleaning gas into the reaction chamber, the dielectric material layer 106 can be removed while the electrode material layer 108 is removed, so that the purpose of further reducing particle contamination in the reaction chamber is achieved.
In one embodiment, the volume percentage of the second cleaning gas in the cleaning gas is 5% to 20%. For example, 5%, 6%, 7%, 9%, 10%, 13%, 15%, 17%, 19%, 20%, etc. In practical applications, the volume percentage of the second cleaning gas in the cleaning gas is set according to the ratio of the electrode material layer 108 to the dielectric material layer 106 on the inner wall 102 of the reaction chamber.
In one embodiment, the gas flow rate of the mixed gas is 100sccm to 1000sccm, for example, the gas flow rate of the mixed gas can be 100sccm, 150sccm, 170sccm, 190sccm, 200sccm, 250sccm, 300sccm, 350sccm, 400sccm, 450sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, etc.; in the process of introducing the mixed gas into the reaction chamber, the temperature of the reaction chamber is 400 ℃ to 600 ℃, for example, the reaction temperature may be 400 ℃, 430 ℃, 450 ℃, 470 ℃, 490 ℃, 500 ℃, 550 ℃, 570 ℃, 600 ℃, and the like. The pressure of the reaction chamber is 0to 20torr, for example, the reaction pressure may be 0torr, 5torr, 7torr, 9torr, 10torr, 15torr, 17torr, 19torr, 20torr, etc.
Fig. 3 is a schematic flow chart illustrating the process of introducing the cleaning gas into the reaction chamber according to an embodiment, as shown in fig. 3, in one embodiment, an electrode material layer is further formed on the surface of the carbon material layer 104, and the cleaning gas includes a first cleaning gas and a second cleaning gas; the step of introducing a cleaning gas into the reaction chamber comprises:
s102, introducing the first cleaning gas into the reaction chamber.
Specifically, after the first cleaning gas is introduced into the reaction chamber, the first cleaning gas in the reaction chamber reacts with the electrode material layer 108 to remove the electrode material layer 108.
S104, introducing a second cleaning gas into the reaction chamber.
Specifically, after the second cleaning gas is introduced into the reaction chamber, the second cleaning gas in the reaction chamber reacts with the carbon material layer 104 and the dielectric material layer 106 to generate a volatile product, so as to remove the dielectric material layer 106.
In one embodiment, the gas flow rate of the first cleaning gas is 100sccm to 1000sccm, for example, the gas flow rate of the mixed gas can be 100sccm, 150sccm, 170sccm, 190sccm, 200sccm, 250sccm, 300sccm, 350sccm, 400sccm, 450sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, etc.; the gas flow rate of the second cleaning gas is 100sccm to 1000sccm, for example, the gas flow rate of the mixed gas can be 100sccm, 150sccm, 170sccm, 190sccm, 200sccm, 250sccm, 300sccm, 350sccm, 400sccm, 450sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, etc.; the reaction temperature of the first cleaning gas and the electrode material layer is 100to 800 ℃, for example, the reaction temperature may be 100 ℃, 150 ℃, 170 ℃, 200 ℃, 250 ℃, 300 ℃/3500 ℃, 400 ℃, 430 ℃, 450 ℃, 500 ℃, 550 ℃, 600 ℃, 650 ℃, 700 ℃, 750 ℃, 800 ℃ and the like. The reaction pressure between the first cleaning gas and the electrode material layer is 0torr to 100torr, for example, the reaction pressure may be 0torr, 10torr, 15torr, 20torr, 30torr, 50torr, 70torr, 90torr, 100torr, etc.; the reaction temperature of the second cleaning gas with the carbon material layer and the dielectric material layer is 400 to 600 ℃, and for example, the reaction temperature may be 400 ℃, 430 ℃, 450 ℃, 470 ℃, 490 ℃, 500 ℃, 550 ℃, 570 ℃, 600 ℃, or the like. The reaction pressure of the second cleaning gas with the carbon material layer and the dielectric material layer is 0to 20torr, and for example, the reaction pressure may be 0torr, 5torr, 7torr, 9torr, 10torr, 15torr, 17torr, 19torr, 20torr, or the like.
In one embodiment, the reaction temperature of the first cleaning gas and the electrode material layer 108 is different from the reaction temperature of the second cleaning gas and the carbon material layer 104 and the dielectric material layer 106.
In one embodiment, the material of the dielectric material layer 106 includes zirconium dioxide, and the material of the electrode material layer 108 includes titanium nitride, titanium, metal tungsten, metal copper; the first cleaning gas comprises chlorine trifluoride and the second cleaning gas comprises chlorine gas.
Fig. 4 is a schematic flow chart of a semiconductor processing method according to an embodiment, and as shown in fig. 4, in the present embodiment, a semiconductor processing method is provided, the semiconductor processing method is performed in a reaction chamber, and a carbon material layer is formed on an inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
s202, providing a substrate, and placing the substrate in the reaction chamber.
After the substrate is provided, the substrate is placed in the reaction chamber by a transfer mechanism of an apparatus in which the reaction chamber is located or manually. The base may be a semiconductor substrate or a semiconductor substrate having a surface on which a partial device structure is formed, and the semiconductor substrate may be undoped single crystal silicon, impurity-doped single crystal silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator-silicon-germanium (S-SiGeOI), silicon-on-insulator-silicon-germanium (SiGeOI), germanium-on-insulator (GeOI), or the like. As an example, in the present embodiment, the constituent material of the semiconductor substrate is single crystal silicon.
And S204, forming a dielectric layer on the substrate.
Specifically, a dielectric layer is formed on a substrate, and a dielectric material layer is attached to the surface of the carbon material layer on the inner wall of the reaction chamber in the process of forming the dielectric layer. It is understood that the dielectric material layer and the dielectric layer are the same dielectric material. Illustratively, the material of the dielectric material layer includes a high dielectric constant dielectric material, such as ZrO2。
S206, cleaning the reaction chamber by using the cleaning method according to any one of the above methods.
The semiconductor process method is executed in a reaction chamber, and a carbon material layer is formed on the inner wall of the reaction chamber. The carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the aims of eliminating the problem that the medium material layer on the inner wall of the reaction chamber drops to the substrate in the reaction chamber to form particle contamination and further influencing the performance of a semiconductor device formed on the substrate are fulfilled.
In one embodiment, the semiconductor process further includes: repeating the steps for N times, wherein N is an integer greater than or equal to 2. It is understood that the above steps are repeated N times, and then the maintenance of the reaction chamber is required, and at this time, the inner wall of the reaction chamber may remain as a layer of the carbon material with a partial thickness.
FIG. 5 is a schematic flow chart illustrating a semiconductor processing method according to another embodiment of the present invention, wherein the semiconductor processing method is performed in a reaction chamber, and a carbon material layer is formed on an inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
s302, providing a substrate, and placing the substrate in a reaction chamber.
After the substrate is provided, the substrate is placed in the reaction chamber by a transfer mechanism of an apparatus in which the reaction chamber is located or manually. The base may be a semiconductor substrate or a semiconductor substrate having a surface on which a partial device structure is formed, and the semiconductor substrate may be undoped single crystal silicon, impurity-doped single crystal silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator-silicon-germanium (S-SiGeOI), silicon-on-insulator-silicon-germanium (SiGeOI), germanium-on-insulator (GeOI), or the like. As an example, in the present embodiment, the constituent material of the semiconductor substrate is single crystal silicon.
S304, forming a lower electrode on the substrate.
A lower electrode is formed on the substrate by a deposition process well known to those skilled in the art, wherein the material of the lower electrode is an electrode material. Illustratively, the electrode material includes a metal electrode material, such as TiN.
And S306, forming a dielectric layer on the surface of the lower electrode.
A dielectric layer is formed on the surface of the lower electrode by a deposition process known to those skilled in the art, and exemplary materials of the dielectric layer include a high dielectric constant dielectric material such as ZrO2。
And S308, forming an upper electrode on the surface of the dielectric layer.
And forming an upper electrode on the surface of the dielectric layer by a deposition process well known to those skilled in the art, wherein the material of the upper electrode is also an electrode material. Illustratively, the electrode material includes a metal electrode material, such as TiN.
The capacitor device is formed by the lower electrode, the dielectric layer and the upper electrode together, the electrode material layer is attached to the surface of the carbon material layer in the process of forming the lower electrode and/or the process of forming the upper electrode, and the dielectric material layer is attached to the surface of the carbon material layer in the process of forming the dielectric layer; it is understood that the dielectric material layer and the dielectric layer are made of the same dielectric material, and the electrode material layer is made of the same material as the upper electrode and/or the lower electrode.
And S310, cleaning the reaction chamber by adopting the cleaning method of any one of the above-mentioned methods.
The semiconductor process method is executed in a reaction chamber, and a carbon material layer is formed on the inner wall of the reaction chamber. The carbon material layer is formed on the inner wall of the reaction chamber, and the cleaning gas which can form volatile products with the carbon material layer and the medium material layer is introduced into the reaction chamber, so that the medium material layer adsorbed on the surface of the carbon material layer is removed, and the aims of eliminating the problem that the medium material layer on the inner wall of the reaction chamber drops to the substrate in the reaction chamber to form particle contamination and further influencing the performance of a semiconductor device formed on the substrate are fulfilled.
In one embodiment, the semiconductor processing method further comprises: repeating the steps M times, wherein M is an integer greater than or equal to 2. It will be appreciated that the above steps are repeated M times and then maintenance of the reaction chamber is required, in which case the inner wall of the reaction chamber may remain with a partial thickness of the layer of carbon material.
It should be understood that, although the steps in the flowcharts of fig. 3, 4, and 5 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 3, 4, and 5 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least some of the sub-steps or stages of other steps.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express a few embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, variations and modifications can be made without departing from the concept of the embodiments of the present application, and these embodiments are within the scope of the present application. Therefore, the protection scope of the patent of the embodiment of the application shall be subject to the appended claims.
Claims (16)
1. A method for cleaning a reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber, and a dielectric material layer is attached to the surface of the carbon material layer, the method comprising:
and introducing cleaning gas into the reaction chamber, wherein the cleaning gas, the carbon material layer and the medium material layer react to form a volatile product so as to remove the medium material layer.
2. The cleaning method according to claim 1, wherein the material of the dielectric material layer comprises zirconium dioxide, and the cleaning gas comprises chlorine.
3. The cleaning method of claim 1, wherein the inner wall of the reaction chamber comprises at least one of a side wall of the reaction chamber, a bottom of the reaction chamber, and a top of the reaction chamber.
4. The cleaning method according to claim 1, wherein the thickness of the carbon material layer is 500nm to 5 um.
5. The method according to claim 1, wherein the reaction temperature of the cleaning gas with the carbon material layer and the dielectric material layer is 400 ℃ to 600 ℃, and the reaction pressure of the cleaning gas with the carbon material layer and the dielectric material layer is 0torr to 20 torr.
6. The cleaning method according to claim 1, wherein an electrode material layer is further formed on the surface of the carbon material layer, the cleaning gas comprises a mixed gas of a first cleaning gas and a second cleaning gas, the mixed gas is introduced into the reaction chamber, and the first cleaning gas in the mixed gas reacts with the electrode material layer to remove the electrode material layer; and the second cleaning gas in the mixed gas reacts with the carbon material layer and the medium material layer to generate the volatile product so as to remove the medium material layer.
7. The cleaning method of claim 6, wherein the volume percentage of the second cleaning gas in the cleaning gas is 5% to 20%.
8. The cleaning method according to claim 6, wherein a gas flow rate of the mixed gas is 100sccm to 1000 sccm; and in the process of introducing the mixed gas into the reaction chamber, the temperature of the reaction chamber is 400-600 ℃, and the pressure of the reaction chamber is 0-20 torr.
9. The cleaning method according to claim 1, wherein an electrode material layer is further formed on the surface of the carbon material layer, and the cleaning gas includes a first cleaning gas and a second cleaning gas; the step of introducing a cleaning gas into the reaction chamber comprises:
introducing the first cleaning gas into the reaction chamber, wherein the first cleaning gas reacts with the electrode material layer to remove the electrode material layer;
and introducing the second cleaning gas into the reaction chamber, wherein the second cleaning gas reacts with the carbon material layer and the medium material layer to generate the volatile product so as to remove the medium material layer.
10. The cleaning method according to claim 9, wherein the first cleaning gas has a gas flow rate of 100sccm to 1000 sccm; the gas flow of the second cleaning gas is 100 sccm-1000 sccm; the reaction temperature of the first cleaning gas and the electrode material layer is 100-800 ℃, and the reaction pressure of the first cleaning gas and the electrode material layer is 0-100 torr; the reaction temperature of the second cleaning gas and the carbon material layer and the medium material layer is 400-600 ℃, and the reaction pressure of the second cleaning gas and the carbon material layer and the medium material layer is 0-20 torr.
11. The cleaning method according to claim 10, wherein a reaction temperature of the first cleaning gas with the electrode material layer and a reaction temperature of the second cleaning gas with the carbon material layer and the dielectric material layer are different.
12. The cleaning method according to any one of claims 6 to 11, wherein the material of the dielectric material layer comprises zirconium dioxide, and the material of the electrode material layer comprises titanium nitride; the first cleaning gas comprises chlorine trifluoride and the second cleaning gas comprises chlorine gas.
13. The semiconductor processing method is characterized by being executed in a reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
providing a substrate and placing the substrate in the reaction chamber;
forming a dielectric layer on the substrate, wherein a dielectric material layer is attached to the surface of the carbon material layer in the process of forming the dielectric layer;
cleaning the reaction chamber using the cleaning method of any one of claims 1 to 5.
14. The semiconductor processing method of claim 13, further comprising: repeating the steps for N times, wherein N is an integer greater than or equal to 2.
15. The semiconductor processing method is characterized by being executed in a reaction chamber, wherein a carbon material layer is formed on the inner wall of the reaction chamber; the semiconductor process method comprises the following steps:
providing a substrate and placing the substrate in the reaction chamber;
forming a lower electrode on the substrate;
forming a dielectric layer on the surface of the lower electrode;
forming an upper electrode on the surface of the dielectric layer; the lower electrode, the dielectric layer and the upper electrode together form a capacitor device, an electrode material layer is attached to the surface of the carbon material layer in the process of forming the lower electrode and/or the process of forming the upper electrode, and a dielectric material layer is attached to the surface of the carbon material layer in the process of forming the dielectric layer;
cleaning the reaction chamber using the cleaning method of any one of claims 6 to 12.
16. The semiconductor processing method of claim 15, further comprising: repeating the steps M times, wherein M is an integer greater than or equal to 2.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115318761A (en) * | 2022-08-16 | 2022-11-11 | 长鑫存储技术有限公司 | Chamber cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115318761A (en) * | 2022-08-16 | 2022-11-11 | 长鑫存储技术有限公司 | Chamber cleaning method |
| CN115318761B (en) * | 2022-08-16 | 2023-10-13 | 长鑫存储技术有限公司 | Chamber cleaning method |
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