CN114682921A - Laser engraving method for silicon carbide wafer - Google Patents
Laser engraving method for silicon carbide wafer Download PDFInfo
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- CN114682921A CN114682921A CN202111216955.7A CN202111216955A CN114682921A CN 114682921 A CN114682921 A CN 114682921A CN 202111216955 A CN202111216955 A CN 202111216955A CN 114682921 A CN114682921 A CN 114682921A
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- silicon carbide
- laser
- carbide wafer
- engraving
- transparent layer
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 106
- 238000010147 laser engraving Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 45
- 230000000694 effects Effects 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 22
- 238000007493 shaping process Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 238000007781 pre-processing Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a laser engraving method of a silicon carbide wafer. The method comprises a pre-step, a setting step and an engraving step. The pre-processing step comprises: providing a laser emitter, a carrier, and a silicon carbide wafer; the silicon carbide wafer is transparent and is provided with a first surface and a second surface which are positioned on two opposite sides. The setting step: and placing the second surface on a non-light-transmitting bearing processing surface of the carrying platform so as to enable the laser emitter to face the first surface. The engraving step comprises: and emitting at least one laser beam towards a preset point of the second surface by the laser emitter, wherein at least one laser beam penetrates through the silicon carbide wafer, and laser notches are formed in the preset point and a sacrificial region of the bearing processing surface adjacent to the preset point in a concave mode. Therefore, the laser groove which is in accordance with the preset shape is easily formed at the preset point through the non-transparent bearing processing surface, and the probability of generating defects is reduced.
Description
Technical Field
The invention relates to a laser engraving method, in particular to a laser engraving method of a silicon carbide wafer.
Background
When the existing laser engraving method directly performs laser engraving on one top surface (such as a processing surface) of the silicon carbide wafer, because the silicon carbide wafer is transparent, the energy of the laser engraving is difficult to be completely concentrated on the top surface, so that the laser engraving groove formed on the top surface is easy to generate defects (such as edge breakage caused by the laser engraving groove, and characters or images represented by the laser engraving groove are not clear) and cannot completely present the endowed functions.
The present inventors have considered that the above-mentioned drawbacks can be improved, and have made intensive studies and use of scientific principles, and finally have proposed the present invention which is designed reasonably and effectively to improve the above-mentioned drawbacks.
Disclosure of Invention
The embodiment of the invention aims to provide a laser engraving method of a silicon carbide wafer, which can effectively overcome the defects possibly generated by the existing laser engraving method.
The embodiment of the invention discloses a laser engraving method of a silicon carbide wafer, which comprises the following steps: a pre-step: providing a laser emitter, a carrying platform arranged corresponding to the laser emitter, and a silicon carbide wafer; wherein, the carrier has a non-light-transmitting bearing processing surface, the silicon carbide wafer has a first surface and a second surface which are positioned at two opposite sides, and the silicon carbide wafer is transparent from the first surface to the second surface; a setting step: placing the second surface of the silicon carbide wafer on the bearing processing surface of the carrier so that the laser emitter faces the first surface of the silicon carbide wafer; and a carving step: and emitting at least one laser beam by a laser emitter towards a predetermined point of the second surface, wherein the at least one laser beam penetrates through the silicon carbide wafer and a laser groove is formed in each of the predetermined point and the adjacent sacrificial region bearing the processing surface in a concave mode.
Preferably, in the engraving step, the number of the at least one laser beam is further limited to at least four, the power of the laser emitter is 5 watts (W) to 20W, and the emission frequency of the laser emitter is 20 hertz (Hz) to 35 Hz.
Preferably, in the engraving step, at least one laser beam forms an incident angle between 80 degrees (degrees) and 100 degrees with the first surface, and the first surface is a subsequent structure forming processing surface of the silicon carbide wafer.
Preferably, the laser engraving method for silicon carbide wafer comprises a plurality of engraving steps, so that the silicon carbide wafer is provided with a plurality of laser grooves at a plurality of predetermined points on the second surface, and the plurality of laser grooves form at least one patterned groove distribution.
Preferably, the laser engraving method for a silicon carbide wafer includes the engraving step a plurality of times, and after the plurality of engraving steps are completed, the stage on which the plurality of laser engraved grooves are formed is replaced with another stage on which no laser engraved grooves are formed.
Preferably, in the pre-step, a non-transparent layer is formed on the first surface of the silicon carbide wafer; in the engraving step, at least one laser beam can be incident into the silicon carbide wafer from the first surface through the non-transparent layer.
Preferably, the non-transparent layer is connected to the first surface of the silicon carbide wafer without a gap, and the non-transparent layer is one of a carbon layer, a resin layer, and a titanium oxide layer.
Preferably, in the preliminary step, a non-transparent layer is detachably provided on the first surface of the silicon carbide wafer; in the engraving step, at least one laser beam can be incident into the silicon carbide wafer from the first surface through the non-transparent layer.
Preferably, the non-transparent layer has a light transmittance between 5% and 30% corresponding to the wavelength of visible light.
Preferably, in the engraving step, the sacrificial region of the carrier absorbs a part of at least one laser beam to generate a thermal effect, and the predetermined point and the adjacent sacrificial region thereof are each concavely formed with a laser groove by the thermal effect.
In summary, in the laser engraving method for silicon carbide wafer disclosed in the embodiments of the present invention, the laser beam passes through the silicon carbide wafer, and the laser groove is formed on the second surface and the bearing processing surface where the silicon carbide wafer and the carrier contact each other, so that the silicon carbide wafer can pass through the non-transparent bearing processing surface, and the laser groove conforming to the predetermined shape can be easily formed at the predetermined point, thereby reducing the probability of the defect generated by the laser groove.
For a better understanding of the nature and technical content of the present invention, reference should be made to the following detailed description of the invention and the accompanying drawings, which are provided for illustration purposes only and are not intended to limit the scope of the invention in any way.
Drawings
Fig. 1 is a schematic view of a preceding step of a laser engraving method for a silicon carbide wafer according to a first embodiment of the present invention.
Fig. 2 is a schematic view showing a setup procedure of a laser engraving method for a silicon carbide wafer according to a first embodiment of the present invention.
Fig. 3 is a schematic view of an engraving step of the laser engraving method for silicon carbide wafer according to the first embodiment of the present invention.
Fig. 4 is a schematic view of a laser engraving method of a silicon carbide wafer according to a first embodiment of the present invention, in which a single laser groove is formed in the silicon carbide wafer.
Fig. 5 is a schematic view showing a silicon carbide wafer on which a plurality of laser grooves are formed by the laser engraving method according to the first embodiment of the present invention.
Fig. 6 is a schematic view of a silicon carbide wafer after the laser engraving method for the silicon carbide wafer according to the first embodiment of the present invention is performed.
Fig. 7 is a bottom view of fig. 6.
Fig. 8 is a schematic view showing a preceding step of a laser engraving method for a silicon carbide wafer according to a second embodiment of the present invention.
Detailed Description
The following is a description of the embodiments of the "method for laser engraving silicon carbide wafer" disclosed in the present invention by specific examples, and those skilled in the art can understand the advantages and effects of the present invention from the disclosure in the present specification. The invention is capable of other and different embodiments and its several details are capable of modification and various other changes, which can be made in various details within the specification and without departing from the spirit and scope of the invention. The drawings of the present invention are for illustrative purposes only and are not intended to be drawn to scale. The following embodiments will further explain the related art of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are used primarily to distinguish one element from another element or from one signal to another signal. In addition, the term "or" as used herein should be taken to include any one or combination of more of the associated listed items as the case may be.
[ example one ]
Fig. 1 to 7 show a first embodiment of the present invention. The present embodiment discloses a laser engraving method for silicon carbide wafer, which comprises a pre-step S110, a setting step S130, and an engraving step S150. The respective steps included in the laser engraving method for a silicon carbide wafer will be described below.
As shown in fig. 1, the pre-step S110: a laser emitter 1, a carrier 2 provided corresponding to the laser emitter 1, and a silicon carbide wafer 3 are provided. Wherein the carrier 2 has a non-light-transmitting bearing processing surface 21, the silicon carbide wafer 3 has a first surface 31 and a second surface 32 on opposite sides, and the silicon carbide wafer 3 is transparent from the first surface 31 to the second surface 32.
It should be noted that the first surface 31 forms a processing surface for subsequent structures of the silicon carbide wafer 3; that is, after the silicon carbide wafer 3 is subjected to the laser engraving method, the silicon carbide wafer 3 is subjected to subsequent processing on the first surface 31 to form a final product, but the invention is not limited thereto. For example, in other embodiments not shown in the present disclosure, the subsequent structure-forming processing surface of the silicon carbide wafer 3 may also be the second surface 32.
In addition, in the embodiment, the sic wafer 3 further has a non-transparent layer 4 formed on the first surface 31, and the non-transparent layer 4 preferably has a light transmittance of 5% to 30% corresponding to the wavelength of visible light, but the invention is not limited thereto. For example, in other embodiments not shown in the present disclosure, the first surface 31 of the silicon carbide wafer 3 may not be formed with the non-transparent layer 4; alternatively, the opaque layer 4 may have a light transmittance of 5% to 30% at a wavelength corresponding to visible light.
In more detail, the non-transparent layer 4 is connected to the first surface 31 of the silicon carbide wafer 3 without a gap, and the non-transparent layer 4 may be one of a carbon layer, a resin layer, and a titanium dioxide layer. In the present embodiment, the non-transparent layer 4 is applied on the first surface 31 of the silicon carbide wafer 3, but the manner of forming the non-transparent layer 4 on the silicon carbide wafer 3 can be adjusted and varied according to design requirements (such as evaporation or sputtering), and is not limited to this embodiment.
As shown in fig. 2, the setting step S130: the second surface 32 of the silicon carbide wafer 3 is placed on the carrier work surface 21 of the carrier 2 so that the laser emitter 1 faces the first surface 31 of the silicon carbide wafer 3. In the embodiment, the second surface 32 of the silicon carbide wafer 3 is substantially placed on the carrying and processing surface 21 without a gap, so as to facilitate the subsequent engraving step S150, but the invention is not limited thereto.
It should be noted that the part of the carrier 2 on which the silicon carbide wafer 3 is carried is defined as the carrying processing surface 21; that is, the carrier 2 only has to be non-light-transmissive in the region contacting the silicon carbide wafer 3, and the remaining region of the carrier 2 (e.g., the region of the carrier 2 outside the carrier processing surface 21) is not necessarily non-light-transmissive. In the embodiment, the carrier 2 is a silicon wafer, and the carrier preferably has a transmittance of 0% corresponding to the wavelength of visible light, but the invention is not limited thereto. For example, the transmittance of the stage 2 corresponding to the visible light wavelength may be 0% to 20% or 0% to 10% according to the design requirement.
As shown in fig. 3 and 4, the engraving step S150: at least one laser beam L is emitted by the laser emitter 1 towards a predetermined point P of the second surface 32, and at least one laser beam L passes through the silicon carbide wafer 3 to form a laser engraved groove 22, 33 in each of the predetermined point P and a sacrificial region (not labeled) of the processing bearing surface 21 adjacent to the predetermined point P. In more detail, the sacrificial region of the stage 2 absorbs a portion of at least one laser beam L to generate a thermal effect, and the predetermined point P and the sacrificial region adjacent thereto are each recessed by the thermal effect to form the laser scribing grooves 22 and 33, but the invention is not limited thereto.
Accordingly, in the laser engraving method for the silicon carbide wafer, the laser beam L passes through the silicon carbide wafer 3, and the laser grooves 22 and 33 are formed on the second surface 32 and the bearing processing surface 21, which are in contact with each other, of the silicon carbide wafer 3 and the stage 2, so that the laser groove 33 conforming to a predetermined shape can be easily formed at a predetermined point P through the bearing processing surface 21 which is non-transparent, and the probability of defects generated by the laser groove 33 is reduced.
Furthermore, in the present embodiment, at least one of the laser beams L can pass through the non-transparent layer 4 and be incident into the silicon carbide wafer 3 from the first surface 31, so as to reduce the reflection of at least one of the laser beams L on the first surface 31, thereby effectively controlling the energy of the laser scribe 33 formed on the silicon carbide wafer 3, but the invention is not limited thereto. Furthermore, after the silicon carbide wafer 3 has completed the formation of the laser scribe 33, the non-transparent layer 4 may be removed (e.g., FIG. 6).
In more detail, in order to make the laser groove 33 formed on the silicon carbide wafer 3 have a preferable configuration (i.e., the laser groove 33 conforms to a predetermined shape), the engraving step S150 may include at least one of the following conditions, but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, the engraving step S150 may not include any of the following conditions.
Condition a: at least one of the laser beams L may be infrared light (e.g., YAG laser light) with a wavelength between 1000 nanometers (nm) and 1100 nm, and at least one of the laser beams L and the first surface 31 are preferably formed with an incident angle σ between 80 degrees (degrees) and 100 degrees (e.g., the incident angle σ is preferably 90 degrees), but the invention is not limited thereto. For example, in other embodiments not shown in the drawings, the specific value of the incident angle σ may be adjusted and varied according to design requirements as long as at least one laser beam L can pass through the silicon carbide wafer 3 to reach the predetermined point P.
Condition B: the number of at least one of said laser beams L may be further limited to at least four; that is, one of the laser engraved grooves 33 formed in the silicon carbide wafer 3 is formed in a dot shape by at least four laser beams L. The power of the laser transmitter 1 is 5 watts (W) to 20 watts, and the transmitting frequency of the laser transmitter 1 is between 20 hertz (Hz) and 35 Hz, but the invention is not limited thereto.
In addition, the above is the implementation process of forming one laser engraved groove 33 on the second surface 32 of the silicon carbide wafer 3 by the laser engraving method of the silicon carbide wafer, but the laser engraving method of the silicon carbide wafer may include a plurality of times of the engraving step S150 (for example, fig. 5 to 7) so that the silicon carbide wafer 3 is recessed with a plurality of laser engraved grooves 33 at a plurality of predetermined points P on the second surface 32 (and a plurality of laser engraved grooves 22 are correspondingly formed in a plurality of sacrificial regions adjacent to the predetermined points P, respectively), and the plurality of laser engraved grooves 33 constitute at least one patterned groove distribution D.
When the engraving step S150 is performed a plurality of times, the processing speed of the laser emitter 1 is preferably 900 mm/min (mm/min) to 1100 mm/min. Furthermore, at least one of the patterned groove distributions D may be at least one of characters, patterns, numbers, and symbols according to design requirements, which is not limited herein.
Further, after the silicon carbide wafer 3 is subjected to the engraving step S150 a plurality of times, the stage 2 on which the plurality of laser engraved grooves 22 are formed is replaced with another stage on which no laser engraved grooves 22 are formed, whereby the laser engraving method of the silicon carbide wafer is carried out again by the other stage. That is, in the present embodiment, the stage 2 is a consumable part that needs to be replaced after the laser engraving of the silicon carbide wafer 3 is completed.
[ example two ]
Please refer to fig. 8, which illustrates a second embodiment of the present invention. Since this embodiment is similar to the first embodiment, the same parts of the two embodiments are not described again, and the differences between this embodiment and the first embodiment are roughly described as follows:
in the pre-step S210 of the present embodiment, a non-transparent layer 4 is detachably disposed on the first surface 31 of the silicon carbide wafer 3. For example, the non-transparent layer 4 may be attached to the silicon carbide wafer 3 by a glue material, so that the non-transparent layer 4 and the first surface 31 are spaced apart from each other and are not directly connected to each other (or the glue material may be regarded as a part of the non-transparent layer 4).
The opaque layer 4 preferably has a light transmittance of 5% to 30% corresponding to the wavelength of visible light, and the opaque layer 4 may be one of a carbon layer, a resin layer, and a titanium dioxide layer. Furthermore, the opaque layer 4 may be disposed on the first surface 31 by means of pasting, so that the opaque layer 4 is connected to the first surface 31 of the silicon carbide wafer 3 without a gap, but the invention is not limited thereto.
[ technical effects of embodiments of the present invention ]
In summary, in the laser engraving method for silicon carbide wafer disclosed in the embodiments of the present invention, the laser beam passes through the silicon carbide wafer, and the laser groove is formed on the second surface and the bearing processing surface where the silicon carbide wafer and the carrier contact each other, so that the silicon carbide wafer can pass through the bearing processing surface in a non-transparent state, and the laser groove conforming to a predetermined shape can be easily formed at a predetermined point, thereby reducing the probability of generating defects in the laser groove.
In the method for laser engraving of a silicon carbide wafer according to the embodiment of the present invention, in order to make the laser engraved groove formed in the silicon carbide wafer have a preferred configuration, the engraving step may include at least one of the following conditions: at least one of the laser beams preferably forms an angle of incidence with the first surface of between 80 degrees and 100 degrees; the number of at least one of the laser beams may be further limited to at least four, the laser transmitter may have a power of 5 watts (W) to 20 watts, and the laser transmitter may have a transmission frequency of 30 hertz (Hz).
The disclosure is only a preferred embodiment of the invention and is not intended to limit the scope of the invention, so that all equivalent technical changes made by using the contents of the specification and drawings are included in the scope of the invention.
Claims (10)
1. A laser engraving method of a silicon carbide wafer, characterized by comprising:
the method comprises the following steps: providing a laser emitter, a carrying platform arranged corresponding to the laser emitter, and a silicon carbide wafer; the carrier is provided with a non-light-transmitting bearing processing surface, the silicon carbide wafer is provided with a first surface and a second surface which are positioned at two opposite sides, and the silicon carbide wafer is transparent from the first surface to the second surface;
the setting step: placing the second surface of the silicon carbide wafer on the carrier-work surface of the stage such that the laser emitter faces the first surface of the silicon carbide wafer; and
engraving: and emitting at least one laser beam towards a preset point of the second surface by the laser emitter, wherein at least one laser beam penetrates through the silicon carbide wafer, and laser notches are formed in the preset point and a sacrificial region of the bearing processing surface adjacent to the preset point in a concave mode.
2. The method of laser engraving of silicon carbide wafers according to claim 1, wherein in the engraving step, the number of at least one laser beam is further limited to at least four, the power of the laser emitter is 5 to 20 watts, and the emission frequency of the laser emitter is 20 to 35 hz.
3. The laser engraving method of silicon carbide wafers of claim 1, wherein in the engraving step, at least one of the laser beams forms an incident angle of between 80 degrees and 100 degrees with the first surface, and the first surface is a subsequent structure-shaping machined surface of the silicon carbide wafer.
4. The method of claim 1, wherein the laser engraving method comprises a plurality of engraving steps, such that the silicon carbide wafer is recessed with a plurality of laser grooves at a plurality of predetermined points on the second surface, and the plurality of laser grooves form at least one patterned groove distribution.
5. The laser engraving method for a silicon carbide wafer according to claim 1, wherein the number of the engraving steps included in the method for laser engraving a silicon carbide wafer is plural, and after the plural times of the engraving steps are completed, the stage on which the plural laser engraved grooves are formed is replaced with another stage on which no laser engraved grooves are formed.
6. The laser engraving method of a silicon carbide wafer according to claim 1, wherein in the preliminary step, a non-transparent layer is formed on the first surface of the silicon carbide wafer; in the engraving step, at least one of the laser beams is incident into the silicon carbide wafer from the first surface through the non-transparent layer.
7. The method according to claim 6, wherein the non-transparent layer is connected to the first surface of the silicon carbide wafer without a gap, and the non-transparent layer is one of a carbon layer, a resin layer, and a titanium dioxide layer.
8. The laser engraving method of a silicon carbide wafer according to claim 1, wherein in the preliminary step, a non-transparent layer is detachably provided on the first surface of the silicon carbide wafer; in the engraving step, at least one of the laser beams is capable of being incident into the silicon carbide wafer from the first surface through the non-transparent layer.
9. The laser engraving method of a silicon carbide wafer according to claim 6 or 8, wherein the non-transparent layer has a light transmittance of 5% to 30% corresponding to a wavelength of visible light.
10. The laser engraving method of silicon carbide wafer according to claim 1, characterized in that in the engraving step, the sacrificial region of the stage absorbs a part of at least one of the laser beams to generate a thermal effect, and the predetermined point and the sacrificial region adjacent thereto are each concavely formed with the laser engraved groove by the thermal effect.
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| TW109146780A TWI759044B (en) | 2020-12-30 | 2020-12-30 | Laser engraving method of silicon carbide wafer |
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| TWI759044B (en) | 2022-03-21 |
| TW202226353A (en) | 2022-07-01 |
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