CN114678438B - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN114678438B CN114678438B CN202011555985.6A CN202011555985A CN114678438B CN 114678438 B CN114678438 B CN 114678438B CN 202011555985 A CN202011555985 A CN 202011555985A CN 114678438 B CN114678438 B CN 114678438B
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- 229910052752 metalloid Inorganic materials 0.000 claims abstract description 125
- 150000002738 metalloids Chemical class 0.000 claims abstract description 125
- 230000005641 tunneling Effects 0.000 claims abstract description 49
- 230000006798 recombination Effects 0.000 claims abstract description 34
- 238000005215 recombination Methods 0.000 claims abstract description 34
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000006096 absorbing agent Substances 0.000 claims description 96
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000005525 hole transport Effects 0.000 description 16
- 238000002161 passivation Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 108091006149 Electron carriers Proteins 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The application provides a solar cell and a photovoltaic module, and relates to the technical field of solar photovoltaics. The solar cell includes: a tunneling recombination junction disposed between the first subcell and the second subcell; the tunneling composite junction includes a first metalloid layer and a second metalloid layer having different carrier selectivities. In the application, the first and second metalloid layers have different carrier selectivities, so that the recombination rate of carriers generated in the second subcell of the first subcell on the surface contacted with the tunneling recombination junction is reduced, and the carriers on the surface are ensured to be effectively extracted, so that the first subcell and the second subcell can be well electrically connected to form a laminated cell with higher conversion efficiency; meanwhile, the metalloid material has excellent conductivity and thermal stability, reduces resistance loss between subcells, and improves the conversion efficiency of the laminated solar cell.
Description
Technical Field
The application relates to the technical field of solar photovoltaics, in particular to a solar cell and a photovoltaic module.
Background
With the continuous consumption of traditional energy and the negative effects on the environment, solar energy is used as a pollution-free renewable energy source, and development and utilization of the solar energy are rapidly developed.
Because the energy distribution of solar spectrum is wider, any semiconductor material can only absorb photons with energy value larger than the forbidden bandwidth, in order to utilize solar energy to the greatest extent, in recent years, a laminated solar cell system has received extensive attention in the field of solar cells, for example, perovskite solar cells capable of absorbing solar light with higher energy are prepared by adopting perovskite materials as light absorbing materials, silicon crystal solar cells capable of absorbing solar light with lower energy are prepared by adopting silicon materials as light absorbing materials, so that the perovskite solar cells can be used as top cells, the silicon crystal solar cells can be used as bottom cells, and tunneling composite junctions are arranged between the top cells and the bottom cells to connect the top cells and the bottom cells, so that the laminated solar cells are formed, the spectral response range of the solar cells is widened, and the efficiency of the solar cells is improved.
However, in the current scheme, a thicker Indium Tin Oxide (ITO) material is mostly used for the tunneling composite junction, the preparation method is complex, the cost is high, and the thicker ITO has larger parasitic absorption, so that the efficiency of the solar cell is reduced.
Disclosure of Invention
The application provides a solar cell and a photovoltaic module, and aims to solve the problems of complex preparation method, high cost and low efficiency of a laminated solar cell of a tunneling composite junction of the laminated solar cell.
In a first aspect, an embodiment of the present application provides a solar cell, including:
a first subcell and a second subcell, a tunneling recombination junction disposed between the first subcell and the second subcell;
the tunneling composite junction comprises a first metalloid layer and a second metalloid layer, wherein the first metalloid layer and the second metalloid layer have different carrier selectivities, and the carrier selectivity of the first metalloid layer is electron selectivity or hole selectivity;
the light absorber of the first sub-cell is a first light absorber, the light absorber of the second sub-cell is a second light absorber, and the band gap of the first light absorber is larger than that of the second light absorber.
Optionally, the first metalloid layer and the second metalloid layer comprise at least one same element.
Optionally, the first and second metalloid layers include: any one of titanium nitride, titanium carbide, titanium aluminum carbide, and tantalum aluminum carbide.
Optionally, the thickness of the first and second metalloid layers is 5-100 nm.
Optionally, the first and second metalloid layers are n-type titanium nitride and p-type titanium nitride, respectively.
Optionally, the n-type titanium nitride is doped titanium nitride doped with a first doping element, and the first doping element includes: elemental aluminumAny one or more of arsenic element and phosphorus element, wherein the concentration of the first doping element is more than 10×10 18 /cm 3 ；
The p-type titanium nitride is doped titanium nitride doped with a second doping element, and the second doping element is aluminum.
Optionally, the first doping element and the second doping element both include aluminum, and the concentration of aluminum in the first metalloid layer is increased in a gradient along a direction away from the first subcell, and the concentration of aluminum in the second metalloid layer is increased in a gradient along a direction away from the second subcell.
Optionally, an undoped metalloid layer is disposed between the first and second metalloid layers.
Optionally, a silicon oxide tunneling layer is disposed between the second metalloid layer and the second subcell.
Optionally, the first light absorber comprises a perovskite material or a group III-V compound semiconductor;
the second light absorber is a silicon substrate.
In a second aspect, an embodiment of the present application provides a photovoltaic module, where the photovoltaic module includes any one of the solar cells described above.
Based on the solar cell, the production method and the photovoltaic module, the application has the following beneficial effects: the solar cell of the present application comprises: a tunneling recombination junction disposed between the first subcell and the second subcell; the tunneling composite junction comprises a first metalloid layer and a second metalloid layer, wherein the first metalloid layer and the second metalloid layer have different carrier selectivities, and the carrier selectivity of the first metalloid layer is electron selectivity or hole selectivity; the light absorber of the first sub-cell is a first light absorber, the light absorber of the second sub-cell is a second light absorber, and the band gap of the first light absorber is larger than that of the second light absorber. In the application, the tunneling composite junction between the first sub-cell and the second sub-cell comprises the first metalloid layer and the second metalloid layer, and the first metalloid layer and the second metalloid layer have different carrier selectivities, so that the recombination rate of carriers generated in the first light absorber of the first sub-cell and the second light absorber of the second sub-cell on the surface contacted with the tunneling composite junction is reduced, and one type of carriers on the surface is ensured to be effectively extracted, so that the first sub-cell and the second sub-cell can be well electrically connected to form a laminated cell with higher conversion efficiency; meanwhile, the metalloid material has excellent conductivity and thermal stability, so that the resistance loss between the subcells is reduced by the first metalloid layer and the second metalloid layer, the conversion efficiency of the laminated solar cell is improved, the deposition temperature of the metalloid material is lower, the deposition mode is more, and the process complexity and the cost for preparing the laminated cell can be reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments of the present application will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic structural diagram of a first solar cell in an embodiment of the present application;
fig. 2 shows a schematic structural diagram of a second solar cell in an embodiment of the present application;
fig. 3 shows a schematic structural diagram of a third solar cell in an embodiment of the present application.
Description of the drawings:
10-first subcell, 11-first light absorber, 12-first electron transport layer, 13-first hole transport layer, 20-second subcell, 21-second light absorber, 22-second electron transport layer, 23-second hole transport layer, 30-tunneling recombination junction, 31-first metalloid layer, 32-second metalloid layer, 33-undoped metalloid layer, 40-silicon oxide tunneling layer, 50-passivation antireflection layer, 60-first electrode, 70-passivation layer, 80-second electrode.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The following describes in detail a solar cell, a method of producing the same, and an optical Fu Guangfu assembly, by way of example only.
Fig. 1 shows a schematic structural diagram of a first solar cell according to an embodiment of the present application, and referring to fig. 1, the solar cell may include: a first sub-cell 10 and a second sub-cell 20, and a tunneling recombination junction 30 disposed between the first sub-cell 10 and the second sub-cell 20. The light absorber of the first sub-cell 10 is a first light absorber 11, the light absorber of the second sub-cell 20 is a second light absorber 21, and the band gap of the first light absorber 11 is larger than the band gap of the second light absorber 21, so that when sunlight irradiates the solar cell, the first sub-cell 10 provided with the first light absorber 11 can absorb solar rays with higher energy, carriers are generated in the first light absorber 11, the second sub-cell 20 provided with the second light absorber 21 can absorb solar rays with lower energy, and carriers are generated in the second light absorber 21.
Further, since the tunneling recombination junction 30 disposed between the first and second sub-cells 10 and 20 includes the first and second metalloid layers 31 and 32, the first and second metalloid layers 31 and 32 have different carrier selectivities, the first and second metalloid layers 31 and 32 have carrier selectivities of electron or hole selectivities, and the second metalloid layers 32 have carrier selectivities of hole or electron selectivities, respectively, so that recombination rates of carriers generated in the first and second light absorbers 11 and 21 of the first and second sub-cells 10 and 20 on surfaces in contact with the tunneling recombination junction 30 are reduced and it is ensured that one type of carriers is effectively extracted on the surfaces, so that the first and second sub-cells 10 and 20 can be well electrically connected to form a stacked solar cell having high conversion efficiency.
In an embodiment of the present application, the first subcell 10 in the stacked solar cell may be disposed on a light-facing surface of the solar cell, the first subcell 10 may further include a first electron transport layer 12 and a first hole transport layer 13, the first electron transport layer 12 is disposed on a surface of the first light absorber 11 close to the tunnel recombination junction 30, the first hole transport layer 13 is disposed on a surface of the first light absorber 11 far from the tunnel recombination junction 30, and the solar cell may further include a first electrode 60 disposed on a surface of the first hole transport layer 13 far from the first light absorber 11. So that when sunlight irradiates on the solar cell, solar rays with higher energy in the sunlight are firstly absorbed by the first light absorber 11 in the first sub-cell 10 and generate carriers, and electron carriers generated in the first light absorber 11 are transmitted to the surfaces of the first sub-cell 10 and the tunneling composite junction 30 by the first electron transmission layer 12, at this time, the first metalloid layer 31 connected with the first electron transmission layer 12 in the tunneling composite junction 30 may have electron selectivity, so as to select and transmit electron carriers generated in the first light absorber 11; and hole carriers generated in the first light absorber 11 are transported to the first electrode 60 by the first hole transport layer 13 and collected by the first electrode 60.
Also, the second sub-cell 20 may further include a second electron transport layer 22 and a second electrode 80, the second electron transport layer 22 being disposed on a side of the second light absorber 21 remote from the tunneling recombination junction 30, and in addition, the solar cell may further include a second electrode 80 disposed on a side of the second electron transport layer 22 remote from the second light absorber 21, such that when sunlight is irradiated onto the solar cell, solar rays of lower energy in the sunlight pass through the first sub-cell 10, are absorbed by the second light absorber 21 in the second sub-cell 20 and generate carriers, and the generated electron carriers in the second light absorber 21 are transmitted to the second electrode 80 by the second electron transport layer 22 and are collected by the second electrode 80, thereby achieving separation and collection of the carriers; at this time, the second metalloid layer 32 connected to the second light absorber 21 in the tunnel recombination junction 30 may have hole selectivity.
Meanwhile, the charge exchange process between the laminated solar cells is recombination, and the recombination of contact areas between the cells can increase the conversion efficiency of the laminated cells. The efficiency of the cell can only be maximized when the recombination probability in the contact area is maximized. In the embodiment of the present application, electron carriers generated in the first light absorber 11 in the first sub-cell 10 are transported to the surface of the tunneling recombination junction 30 by the first electron transport layer 12, and hole carriers generated in the second light absorber 21 in the second sub-cell 20 can be recombined in the tunneling recombination junction 30 between the first sub-cell 10 and the second sub-cell 20.
In an embodiment of the present application, a solar cell includes: a tunneling recombination junction disposed between the first subcell and the second subcell; the tunneling composite junction comprises a first metalloid layer and a second metalloid layer, wherein the first metalloid layer and the second metalloid layer have different carrier selectivities, and the carrier selectivity of the first metalloid layer is electron selectivity or hole selectivity; the light absorber of the first sub-cell is a first light absorber, the light absorber of the second sub-cell is a second light absorber, and the band gap of the first light absorber is larger than that of the second light absorber. In the application, the tunneling composite junction between the first sub-cell and the second sub-cell comprises the first metalloid layer and the second metalloid layer, and the first metalloid layer and the second metalloid layer have different carrier selectivities, so that the recombination rate of carriers generated in the first light absorber of the first sub-cell and the second light absorber of the second sub-cell on the surface contacted with the tunneling composite junction is reduced, and one type of carriers on the surface is ensured to be effectively extracted, so that the first sub-cell and the second sub-cell can be well electrically connected to form a laminated cell with higher conversion efficiency; meanwhile, the metalloid material has excellent conductivity and thermal stability, so that the resistance loss between the subcells is reduced by the first metalloid layer and the second metalloid layer, the conversion efficiency of the laminated solar cell is improved, the deposition temperature of the metalloid material is lower, the deposition mode is more, and the process complexity and the cost for preparing the laminated cell can be reduced.
Optionally, the first and second metalloid layers may include: any one of titanium nitride (TiN), titanium carbide (TiC), titanium aluminum carbide (TiAlC), and tantalum aluminum carbide (TaAlC).
In addition, the first and second metalloid layers may be electron-selective or hole-selective metalloid layers obtained by performing high concentration doping of TiN, tiC, tiAlC or TaAlC as described above.
Optionally, the first metalloid layer and the second metalloid layer include at least one same element, so that the matching between the first metalloid layer and the second metalloid layer can be improved. For example, in the case where the first metalloid layer is titanium nitride, the second metalloid layer may be titanium carbide or aluminum titanium carbide so that the first and second metalloid layers have the same titanium element therein.
Alternatively, the thickness of each of the first and second metalloid layers may be 5-100 nm.
Specifically, since the conductivity of the metalloid layer increases with the increase of the thickness, but remains unchanged when the thickness of the metalloid layer reaches a certain value, and at the same time, the increase of the thickness of the metalloid layer causes the decrease of the light transmittance, it is necessary to comprehensively consider the influence of the thickness on the conductivity and the light transmittance so as to determine the thicknesses of the first and second metalloid layers.
Alternatively, the first and second metalloid layers may be n-type titanium nitride and p-type titanium nitride, respectively, that is, the first and second metalloid layers may be metalloid layers prepared from different materials of titanium nitride, titanium carbide, aluminum titanium carbide and aluminum tantalum carbide, or may be metalloid layers prepared from the same material and having different carrier selectivities. For example, the first metalloid layer and the second metalloid layer may both be titanium nitride, but the first metalloid layer may be a titanium nitride layer having electron selectivity (work function is low), that is, a metalloid layer composed of n-type titanium nitride, and the second metalloid layer may be a titanium nitride layer having hole selectivity (work function is high), that is, a metalloid layer composed of p-type titanium nitride.
Thus, the direct contact of the n-type titanium nitride and the p-type titanium nitride forms a tunneling composite junction with tunneling effect, which results in a low-resistance series connection between the first light absorber and the second light absorber, and minimizes voltage loss of the series connection. The tunneling recombination junction acts like a current source in a stacked device, and the voltage drop across the tunneling recombination junction depends on its performance at the operating current density of the device.
In the embodiment of the application, different preparation methods or doping methods can be adopted to prepare n-type titanium nitride and p-type titanium nitride with different work functions as the first metalloid layer and the second metalloid layer.
Specifically, the deposition modes of the n-type titanium nitride and the p-type titanium nitride may be the same or different, for example, both the n-type titanium nitride and the p-type titanium nitride may be formed by physical vapor deposition (Physical Vapor Deposition, PVD) sputtering deposition, the titanium nitride prepared by PVD sputtering deposition has a middle band gap, and further the titanium nitride prepared by PVD sputtering deposition is doped respectively, so that the p-type titanium nitride and the n-type titanium nitride may be obtained. Alternatively, both n-type titanium nitride and p-type titanium nitride are prepared by a thermal atomic deposition method, but using different precursors, thereby preparing n-type titanium nitride and p-type titanium nitride. For example, titanium tetrachloride and ammonia gas can be used as a titanium source and a nitrogen source, respectively, and deposition can be performed at a temperature ranging from 300 to 500 degrees celsius to obtain p-type titanium nitride; and adopting tetra (dimethylamino) titanium (TDMAT), tetra (diethylamino) titanium (TDEAT) or tetra (ethylmethylamino) titanium (TEMAT) as a titanium source, and adopting ammonia gas as a nitrogen source to deposit at the temperature range of 100-300 ℃ to obtain n-type titanium nitride. The titanium nitride generated by adopting the TDMAT has higher oxygen content and carbon content, so that the prepared titanium nitride has n-type metal behavior.
Alternatively, the n-type titanium nitride may be doped titanium nitride doped with a first doping element, where the first doping element may include: any one or more of aluminum element, arsenic element and phosphorus element, the concentration of the first doping element may be more than 10×10 18 /cm 3 The work function of the n-type titanium nitride is effectively reduced, and the extraction and transmission of electrons are facilitated, namely, if the first metalloid layer is the n-type titanium nitride, the first metalloid layer has electron selectivity.
The p-type titanium nitride can be doped with a second doping element, wherein the second doping element can be aluminum element, so that the work function of the p-type titanium nitride is effectively improved, and extraction and transmission of holes are facilitated, namely, if the second metalloid layer is p-type titanium nitride, the second metalloid layer has hole selectivity.
Optionally, under the condition that the first doping element and the second doping element both contain aluminum elements, the concentration of the aluminum elements in the first metalloid layer can be increased in a gradient manner along the direction away from the first subcell, and the concentration of the aluminum elements in the second metalloid layer can be increased in a gradient manner along the direction away from the second subcell, so that the aluminum elements are distributed in the n-type titanium nitride and the p-type titanium nitride in a gradient manner, and a graded aluminum component tunneling composite junction is obtained, so that the energy band inclination can be regulated by utilizing the graded component, the carrier diffusion-drift combined motion mode is enhanced, the migration tunneling probability of carriers in the tunneling composite junction is enhanced, and the tunneling probability can be improved by 1-2 orders of magnitude.
Fig. 2 shows a schematic structural diagram of a second solar cell according to an embodiment of the present application, and referring to fig. 2, the solar cell may include: a first sub-cell 10 and a second sub-cell 20, and a tunneling recombination junction 30 disposed between the first sub-cell 10 and the second sub-cell 20. The first subcell 10 includes a first light absorber 11, a first electron transport layer 12 and a first hole transport layer 13, wherein the first electron transport layer 12 is disposed on a surface of the first light absorber 11 away from the tunneling recombination junction 30, and the first hole transport layer 13 is disposed on a surface of the first light absorber 11 close to the tunneling recombination junction 30. At this time, the first metalloid layer 31 connected to the first hole transport layer 13 in the tunnel recombination junction 30 may have hole selectivity so as to select and transport hole carriers generated in the first light absorber 11, and electron carriers generated in the first light absorber 11 are transported to the first electrode 60 by the first electron transport layer 12 and collected by the first electrode 60, thereby achieving separation and collection of carriers.
Similarly, the second sub-cell 20 includes a second light absorber 21 and a second hole transport layer 23, and the second hole transport layer 23 is disposed on a side of the second light absorber 21 away from the tunnel recombination junction 30. At this time, the second metalloid layer 32 connected to the second light absorber 21 in the tunneling recombination junction 30 may have electron selectivity so as to select and transport electron carriers generated in the second light absorber 21, and hole carriers generated in the second light absorber 21 are transported to the second electrode 80 by the second hole transport layer 23 and collected by the first electrode 80, thereby achieving separation and collection of carriers.
In the embodiment of the present application, due to the high conductivity and high electron concentration and easy deposition of titanium nitride, n-type titanium nitride with a low work function may be used as the second metalloid layer 32, and an n-type silicon substrate may be used as the second light absorber 21, so that the interface of n-type titanium nitride/n-type silicon substrate has smaller conduction band offset and larger valence band offset, and further, when the silicon oxide tunneling layer 40 including silicon dioxide is disposed between the second metalloid layer 32 and the second light absorber layer, the carrier selective contact structure of n-type titanium nitride/silicon dioxide/n-type silicon substrate is more permeable to electron carriers than to hole carriers, and has lower contact resistance and simpler structure. So that electrons generated in the second light absorber 21 can be efficiently transferred to other subcells of the solar cell. And holes generated in the second light absorber 21 are blocked near or at the interface of the second light absorber 21 and the second metalloid layer 32 from entering other subcells, thereby minimizing recombination losses on the surface of the second light absorber 21.
In addition, the second hole transport layer 23 may be a p+ layer formed by doping on the surface of the silicon substrate, or a p-type amorphous silicon, partially crystalline silicon, nanocrystalline silicon, or polycrystalline silicon layer deposited on the surface of the silicon substrate by a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) or a low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD), the surface doping of the silicon substrate may be performed during the deposition or in situ later, for example, a vapor phase thermal diffusion, ion implantation, or a printing or spin coating process, and a thermally advanced dopant application process may be performed during the subsequent doping.
In the embodiment of the present application, the second hole transport layer may also be an undoped or non-diffused transition metal oxide, such as any one of molybdenum oxide (MoOx), vanadium oxide (VOx) or tungsten oxide (WOx), since a relatively large work function (greater than 5.5 ev) thereof may be used as the hole selective contact, it should be noted that x in the chemical formula may be determined by those skilled in the art according to practical needs. When disposed on the surface of the silicon substrate, the second hole transport layer may induce upward band bending in the silicon substrate, thereby facilitating hole transport. In addition, nickel oxide (NiOx) is another candidate material for hole selective contact, and electrons can be selectively blocked due to the large difference in conduction band between nickel oxide and silicon.
Alternatively, a passivation layer may be further provided between the second hole transporting layer and the second hole transporting layer of the silicon substrate, wherein the passivation layer may be any one of silicon dioxide, titanium dioxide, aluminum oxide, and hydrogenated amorphous silicon (a-Si: H) and may have a thickness of 1 to 15 nm, the passivation layer may eliminate performance degradation due to direct contact between the second hole transporting layer and the second hole transporting layer as an emitter layer, and a passivation layer such as ultra-thin silicon oxide may be used as a tunneling layer, improve interface characteristics of the second light absorber, and smoothly transport carriers generated by tunneling.
Optionally, fig. 3 shows a schematic structural diagram of a third solar cell according to an embodiment of the present application, and referring to fig. 3, an undoped metalloid layer 33 is disposed between the first metalloid layer 31 and the second metalloid layer 32.
Specifically, tunneling hole injection may be improved by varying the thickness of the undoped metalloid layer, where the undoped metalloid layer may be of a mid-band gap, and may have the same composition as the first and second metalloid layers, or may be different.
Alternatively, referring to fig. 1, a silicon oxide tunneling layer 40 may be disposed between the second metalloid layer 32 and the second subcell 20.
Specifically, the silicon oxide tunneling layer 40 can improve the contact between the second metalloid layer 32 and the second light absorber 21, and provide a surface passivation effect for the second light absorber 21. For example, when the second light absorber 21 of the second subcell 20 is a silicon substrate, the effect of direct contact between the metalloid in the second metalloid layer 32 and the silicon substrate is poor, the potential barrier is large, and the silicon oxide tunneling layer 40 is provided between the second metalloid layer 32 and the second subcell 20 and can serve as an interface medium layer, so that the potential barrier is effectively reduced, and the surface passivation effect is achieved.
Alternatively, the first light absorber may include a perovskite material or a group III-V compound semiconductor, and the second light absorber may be a silicon substrate.
Wherein the silicon substrate has a bandgap of 1.12 ev, and as the second light absorber, a light absorbing material having a bandgap higher than that of the silicon substrate, i.e., a bandgap of 1.12-2.2 ev, may be used as the first light absorber, preferably 1.5-1.8 ev, for example, a mixture of organic and/or inorganic substances of perovskite materials or a III-V compound semiconductor is used as the first light absorber, to maximally transmit photons to the second light absorber at the bottom of the solar cell, and efficiently absorb sunlight of higher photon energy to generate electron-hole pairs.
In the embodiment of the present application, if the first light absorber is a direct bandgap III-V compound semiconductor, the thickness of the first light absorber may be 0.5 to 5 micrometers, and if the first light absorber is a perovskite material, the thickness of the first light absorber may be 0.1 to 2 micrometers.
In an embodiment of the present application, the second light absorber may be a silicon substrate, i.e. a light absorber made of crystalline silicon, in particular a silicon wafer made of monocrystalline silicon or polycrystalline silicon, the thickness of the crystalline silicon absorber may be in the range of 50-300 μm, and the crystalline silicon absorber may be p-type doped or n-type doped crystalline silicon. The light-directing surface of the crystalline silicon absorber may be a planar or textured matte surface, and the back light surface of the crystalline silicon may also be a planar or textured matte surface.
Alternatively, the titanium nitride layer can be directly adopted as an electrode on the backlight surface of the solar cell, and the whole titanium nitride contact is applied on the backlight surface of the solar cell, so that the cell structure and the process flow are greatly simplified. In the light-facing surface of the solar cell, the titanium nitride contacted device shows strong parasitic absorption in the near infrared range, so that the current density of the light-receiving surface is limited, and in order to reduce the parasitic absorption of the titanium nitride, the light-facing surface can adopt a composite film of an ultrathin titanium nitride layer (such as <5 nanometers) and contact area metal as an electrode, and on one hand, the passivation effect of the titanium nitride on the surface of the silicon substrate can be utilized to inhibit the recombination of the carrier surface; on the other hand, the method can effectively separate and extract carriers and improve the efficiency of the battery.
Alternatively, referring to fig. 1 to 3, a passivation and antireflection layer 60 is disposed on the light-facing surface of the solar cell, that is, on the surface of the first subcell 10 away from the second subcell 20, and the first electrode 10 passes through the passivation and antireflection layer 60 to contact the first subcell 10, so as to passivate and antireflection the light-facing surface of the solar cell, thereby improving the efficiency of the solar cell. A passivation layer 70 is disposed on a backlight surface of the solar cell, i.e., a surface of the second sub-cell 20 remote from the first sub-cell 10, and the second electrode 20 is in contact with the second sub-cell 20 through the passivation layer 70 to enhance the passivation effect of the solar cell.
In the embodiment of the application, the first or second metalloid layer is contacted with the atmosphere in the deposition process of the first or second metalloid layer to generate a very thin insulating layer on the surface, and the insulating layer consumes the current of the laminated solar cell, so that the surface of the first or second metalloid layer can be subjected to hydrogen treatment by adopting hydrogen to treat the surface of the first or second metalloid layer in the preparation process of the solar cell, thereby being beneficial to reducing or even eliminating the insulating layer formed by oxide, and further removing the oxide layer on the surface of the first or second metalloid layer. However, if the hydrogen treatment time is too long, the surface of the first or second metalloid layer is excessively etched, thereby damaging the tunneling recombination junction of the solar cell, and therefore, the hydrogen treatment time is preferably not more than 20 seconds. In addition, other gases or modes can be adopted to carry out the surface treatment of the first metalloid layer or the second metalloid layer so as to improve the performance of the laminated solar cell.
In addition, the embodiment of the application also provides a photovoltaic module, which comprises any solar cell, wherein the two sides of the solar cell can be provided with packaging adhesive films, cover plates, back plates and the like. Has the same or similar beneficial effects as the solar cell.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.
Claims (10)
1. A solar cell, the solar cell comprising:
a first subcell and a second subcell, a tunneling recombination junction disposed between the first subcell and the second subcell;
the tunneling composite junction comprises a first metalloid layer and a second metalloid layer, wherein the first metalloid layer and the second metalloid layer have different carrier selectivities, and the carrier selectivity of the first metalloid layer is electron selectivity or hole selectivity; the first and second metalloid layers include: any one of titanium nitride, titanium carbide, titanium aluminum carbide, and tantalum aluminum carbide;
the light absorber of the first sub-cell is a first light absorber, the light absorber of the second sub-cell is a second light absorber, and the band gap of the first light absorber is larger than that of the second light absorber.
2. The solar cell of claim 1, wherein the first and second metalloid layers comprise at least one same element.
3. The solar cell of claim 1, wherein the thickness of the first and second metalloid layers is between 5 and 100 nanometers.
4. The solar cell of any of claims 1-3, wherein the first and second metalloid layers are n-type titanium nitride and p-type titanium nitride, respectively.
5. The solar cell according to claim 4, wherein,
the n-type titanium nitride is doped titanium nitride doped with a first doping element comprising: any one or more of aluminum element, arsenic element and phosphorus element, wherein the concentration of the first doping element is more than 10×10 18 /cm 3 ；
The p-type titanium nitride is doped titanium nitride doped with a second doping element, and the second doping element is aluminum.
6. The solar cell according to claim 5, wherein the first doping element and the second doping element each comprise an aluminum element, and wherein the concentration of the aluminum element in the first metalloid layer increases in a gradient in a direction away from the first subcell and the concentration of the aluminum element in the second metalloid layer increases in a gradient in a direction away from the second subcell.
7. A solar cell according to any of claims 1-3, characterized in that an undoped metalloid layer is provided between the first and second metalloid layers.
8. A solar cell according to any of claims 1-3, characterized in that a silicon oxide tunneling layer is provided between the second metalloid layer and the second subcell.
9. A solar cell according to any of claims 1-3, wherein the first light absorber comprises a perovskite material or a group III-V compound semiconductor;
the second light absorber is a silicon substrate.
10. A photovoltaic module comprising the solar cell of any one of claims 1-9.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105493304A (en) * | 2013-08-06 | 2016-04-13 | 新南创新私人有限公司 | A high efficiency stacked solar cell |
| CN107564989A (en) * | 2017-07-20 | 2018-01-09 | 南开大学 | The structure design of tunnel junctions in a kind of perovskite/silicon heterogenous stacked solar cell, cascade solar cell |
| CN108352421A (en) * | 2015-11-19 | 2018-07-31 | 太阳能研究所股份有限公司 | Solar cell with the multiple absorbers interconnected by carrier selectivity contact |
| CN109390430A (en) * | 2018-10-19 | 2019-02-26 | 君泰创新（北京）科技有限公司 | A kind of lamination solar cell and preparation method thereof |
| CN111081878A (en) * | 2018-10-19 | 2020-04-28 | 君泰创新（北京）科技有限公司 | Perovskite/silicon-based heterojunction laminated solar cell and preparation method thereof |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105493304A (en) * | 2013-08-06 | 2016-04-13 | 新南创新私人有限公司 | A high efficiency stacked solar cell |
| CN108352421A (en) * | 2015-11-19 | 2018-07-31 | 太阳能研究所股份有限公司 | Solar cell with the multiple absorbers interconnected by carrier selectivity contact |
| CN107564989A (en) * | 2017-07-20 | 2018-01-09 | 南开大学 | The structure design of tunnel junctions in a kind of perovskite/silicon heterogenous stacked solar cell, cascade solar cell |
| CN109390430A (en) * | 2018-10-19 | 2019-02-26 | 君泰创新（北京）科技有限公司 | A kind of lamination solar cell and preparation method thereof |
| CN111081878A (en) * | 2018-10-19 | 2020-04-28 | 君泰创新（北京）科技有限公司 | Perovskite/silicon-based heterojunction laminated solar cell and preparation method thereof |
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