CN114678286A - Method for measuring wafer deformation - Google Patents
Method for measuring wafer deformation Download PDFInfo
- Publication number
- CN114678286A CN114678286A CN202011562875.2A CN202011562875A CN114678286A CN 114678286 A CN114678286 A CN 114678286A CN 202011562875 A CN202011562875 A CN 202011562875A CN 114678286 A CN114678286 A CN 114678286A
- Authority
- CN
- China
- Prior art keywords
- wafer
- temperature
- deformation
- heating
- heating plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/08—Thermal analysis or thermal optimisation
Abstract
The invention provides a method for measuring wafer deformation, which relates to the technical field of semiconductors and comprises the following steps: measuring temperature difference data between different areas of the wafer or at the same position and different time periods, and establishing corresponding standard function samples by using the temperature difference data and the deformation value of the corresponding area of the wafer; and judging the deformation states of different wafers in the heating process according to the standard function samples. In the above technical solution, after the standard function sample corresponding to the temperature difference data and the deformation value is established in the above manner, the functional relationship between the temperature and the deformation of the wafer can be determined, and the deformation value of the corresponding region of the wafer can be directly determined only by measuring the temperature difference data between different regions of the wafer, so as to determine the deformation condition of the corresponding region of the wafer, and it is not necessary to perform separate measurement on the deformation or warpage condition of the wafer through a separate process, and it is only necessary to perform synchronous completion when the wafer is heated.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for measuring wafer deformation.
Background
During the semiconductor lithography manufacturing process, the wafer is heated to cause different degrees of warpage. In the prior art, an independent measuring device is required to be arranged for measuring the wafer warpage deformation condition, and the warpage deformation condition of the wafer needs to be measured in an independent process, so that the cost is increased, and the working efficiency is reduced.
Disclosure of Invention
The invention aims to provide a method for measuring wafer deformation, which aims to solve the technical problems of high cost and low efficiency of wafer warpage deformation measurement in the prior art.
The invention provides a method for measuring wafer deformation, which comprises the following steps:
measuring temperature difference data between different areas of the wafer or at the same position and different time periods, and establishing corresponding standard function samples by using the temperature difference data and the deformation value of the corresponding area of the wafer;
and judging the deformation states of different wafers in the heating process according to the standard function samples.
Further, the wafer is heated by a heating plate, a plurality of temperature sensors are uniformly arranged on the heating plate, the real-time temperatures of different areas of the wafer are measured by the temperature sensors, and the temperature difference data between the different areas of the wafer is calculated by the real-time temperatures.
Further, before heating the wafer, a cooling plate is used for cooling the wafer, and the wafer is cooled to room temperature.
Furthermore, different areas of the wafer comprise a central area and an edge area of the wafer, and the plurality of temperature sensors are respectively and uniformly distributed in the central area and the edge area.
Further, the step of judging the deformation states of different wafers in the heating process according to the standard function sample comprises:
if the temperature change rate of the central area is smaller than that of the edge area, judging that the wafer is subjected to convex deformation;
and if the temperature change rate of the edge area is smaller than that of the central area, judging that the wafer is subjected to concave deformation.
Further, the heating plate is a circular plate, a central area of the circular plate corresponds to a central area of the wafer, and an edge area of the circular plate corresponds to an edge area of the wafer; the number of the temperature sensors is 15, wherein 3 of the temperature sensors are uniformly distributed in the central area of the heating plate, and the rest 12 of the temperature sensors are uniformly distributed in the edge area of the heating plate along the circumferential direction.
Further, the heating temperature of the heating plate is controlled to be between 60 ℃ and 400 ℃; and/or the temperature detection period of the temperature sensor is between 10ms and 2000 ms.
Further, the heating temperature of the heating plate is decreased as the temperature difference data is gradually increased, and the heating temperature of the heating plate is increased as the temperature difference data is gradually decreased.
Further, the heating plate controls the heating temperature by using a controller connected with the heating plate.
Further, the temperature sensor includes a PT100 sensor or a MEMS sensor.
In the technical scheme, after the standard function sample corresponding to the temperature difference data and the deformation value is established in the above manner, the functional relationship between the temperature and the deformation of the wafer can be determined, the functional relationship is recorded according to the corresponding relationship of the standard function sample, and then the deformation value of the corresponding region of the wafer can be directly determined only by measuring the temperature difference data between different regions of the wafer, so that the deformation condition of the corresponding region of the wafer is judged, the deformation or warpage condition of the wafer does not need to be separately measured through a separate process, the deformation or warpage condition of the wafer only needs to be synchronously completed when the wafer is heated, and the working efficiency is greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram 1 of a heating plate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heating plate according to an embodiment of the present invention 2;
FIG. 3 is a schematic diagram of a cooling plate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a distribution structure of temperature sensors according to an embodiment of the present invention;
FIG. 5 is a schematic view of a process chamber according to one embodiment of the present invention;
fig. 6 is a graph showing the temperature and time variation of the heating plate according to an embodiment of the present invention.
Reference numerals:
1. a compartment body; 2. heating plates; 3. a temperature sensor; 4. a controller; 5. a base; 6. a cooling plate; 7. and (5) a wafer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 to fig. 5, the method for measuring deformation of a wafer 7 provided in this embodiment is characterized by comprising the following steps: measuring temperature difference data between different areas of the wafer 7, and establishing a corresponding standard function sample by using the temperature difference data and a deformation value of the corresponding area of the wafer 7; and judging the deformation states of different wafers 7 in the heating process according to the standard function samples.
First, in the process of heating the wafer 7 by the heating plate, the thermal conduction effect of the wafer 7 changes with the real-time deformation of the wafer, so the temperature change amounts of the heating plate 2 and the wafer 7 are different. Referring to fig. 6, when the wafer 7 is suddenly placed on the heating plate 2, the wafer 7 and the heating plate 2 are initially in contact, and since there is a temperature difference between the wafer 7 and the heating plate 2, heat is conducted from the heating plate 2 to the wafer 7, resulting in a temperature decrease of the heating plate 2 (i.e., the temperature of the curve of fig. 6 is rapidly decreased at an initial stage).
Therefore, after the skilled person establishes the standard function sample corresponding to the temperature difference data and the deformation value in the manner described above, the functional relationship between the temperature and the deformation of the wafer 7 can be determined, and the deformation value of the corresponding region of the wafer 7 can be directly determined by only measuring the temperature difference data between different regions of the wafer 7 according to the corresponding relationship record of the standard function sample, so as to determine the deformation condition of the corresponding region of the wafer 7, and the deformation or the warpage condition of the wafer 7 does not need to be separately measured by a separate process, and only needs to be synchronously completed when the wafer 7 is heated, thereby greatly improving the working efficiency.
With continued reference to fig. 1 to 5, the heating process of the wafer and the determination process of the wafer deformation state may be implemented by a process chamber, which may include a chamber body 1 and a heating plate 2, wherein the heating plate 2 is disposed in an inner cavity of the chamber body 1. The heating plate 2 is used for heating the wafer 7, the plurality of temperature sensors 3 are uniformly arranged on the heating plate 2, the real-time temperatures of different areas of the wafer 7 are measured through the plurality of temperature sensors 3, and the temperature difference data between the different areas of the wafer is calculated through the real-time temperatures.
In one embodiment, the different regions of the wafer 7 include a central region and an edge region of the wafer 7, and the plurality of temperature sensors 3 are uniformly distributed in the central region and the edge region, respectively. The heating plate 2 is provided with a plurality of temperature sensors 3, one part of the temperature sensors 3 is uniformly arranged in the central area of the heating plate 2, and the other part of the temperature sensors 3 is uniformly arranged in the edge area of the heating plate 2.
It can be seen that a plurality of temperature sensors 3 are additionally provided on the heating plate 2 in the processing chamber, and the distribution of the temperature sensors 3 can be set in accordance with the position of the wafer 7 on the heating plate 2. Some of the plurality of temperature sensors 3 may be disposed in a central region of the heating plate 2, and when the wafer 7 is placed on the heating plate 2 for heating, the central region of the wafer 7 corresponds to the central region of the heating plate 2, and at this time, the plurality of temperature sensors 3 disposed in the central region of the heating plate 2 may also correspond to the central region of the wafer 7, so as to detect a real-time heating temperature of the central region of the wafer 7 through the plurality of temperature sensors 3 disposed in the central region of the heating plate 2.
Similarly, another part of the plurality of temperature sensors 3 may be disposed at an edge region of the heating plate 2, when the wafer 7 is placed on the heating plate 2 for heating, the edge region of the wafer 7 corresponds to the edge region of the heating plate 2, and at this time, the plurality of temperature sensors 3 located at the edge region of the heating plate 2 may also correspond to the edge region of the wafer 7, so as to detect a real-time heating temperature of the edge region of the wafer 7 through the plurality of temperature sensors 3 located at the edge region of the heating plate 2.
It should be noted that, if the temperature change rate of a partial region of the wafer 7 is smaller than that of other regions, the region may be deformed in a convex manner. Similarly, if the temperature change rate of the edge region of the wafer 7 is obviously reduced, the distance between the edge region of the wafer 7 and the heating plate 2 is increased, the heat conduction is slowed (the temperature change rate is reduced), and it is proved that the center region of the wafer 7 is deformed in a convex manner at this time, and similarly, if the temperature change rate of the edge region of the wafer 7 is obviously reduced, the distance between the edge region of the wafer 7 and the heating plate 2 is increased at this time, the heat conduction is slowed (the temperature change rate is reduced), and it is proved that the center region of the wafer 7 is deformed in a concave manner at this time, that is, the edge region of the wafer 7 is deformed in a convex manner. Therefore, the temperature of the central region of the wafer 7 and the temperature of the edge region of the wafer 7 are detected by the partial temperature sensor 3, and the standard function sample is queried, so that the deformation of the wafer 7 can be correspondingly analyzed.
Referring to fig. 2, the processing chamber may further be provided with a controller 4, the controller 4 is in data transmission connection with the temperature sensors 3, and the temperature sensors 3 are in temperature control connection with the heating plate 2. The controller 4 can control the heating temperature of the heating plate 2 at any time. At this time, when the controller 4 obtains the temperatures of different areas of the wafer 7 detected by each temperature sensor 3, the deformation condition of the wafer 7 is determined, as described above. Therefore, when the deformation of the wafer 7 is determined to be obvious, the heating plate 2 can be controlled to slow down the heating speed and reduce the temperature. On the contrary, the heating temperature can be increased according to the detected deformation condition, and the purpose that the heating plate 2 heats the wafer 7 can be controlled according to the deformation condition of the wafer 7 in the heating process, namely, the heating temperature of the heating plate is reduced along with the gradual increase of the temperature difference data, and the heating temperature of the heating plate is increased along with the gradual decrease of the temperature difference data. .
Referring to fig. 5, the chamber may further include a susceptor 5 and a cooling plate 6, the chamber body 1 and the cooling plate 6 are disposed on the susceptor 5, and the cooling plate 6 is located outside the chamber body 1. At this time, when the wafer 7 is sent into the processing chamber and heated by the heating plate 2, it can be cooled to room temperature by the cooling plate 6. For example, as shown in fig. 3, the deformation of the wafer 7 is reduced during the cooling process. When the cooling plate 6 is not in use, the cooling plate 6 may be placed on the susceptor 5 for standby.
Preferably, the heating plate 2 is a circular plate, the number of the temperature sensors 3 is 15, 3 of the temperature sensors 3 are uniformly distributed in the central area of the heating plate 2, and the rest 12 of the temperature sensors 3 are uniformly distributed in the edge area of the heating plate 2 along the circumferential direction. At this time, 3 of the temperature sensors 3 are uniformly distributed in the central region of the heating plate 2 to detect the real-time temperature of the central region of the wafer 7, and the remaining 12 of the temperature sensors 3 are uniformly distributed in the peripheral region of the heating plate 2 along the circumferential direction to detect the real-time temperature of each position in the circumferential direction of the peripheral region of the wafer 7. Wherein the temperature sensor comprises a PT100 sensor or a MEMS sensor.
The material of the heating plate 2 may be selected from copper, aluminum, silicon carbide, aluminum nitride, or ceramic. Meanwhile, the temperature detection period of the temperature sensor 3 is between 10ms and 2000ms, for example, the temperature value is obtained by detecting the temperature of the wafer 7 once every 100ms, or the temperature value may be obtained by detecting once every 300ms, 500ms, 800ms, 1000ms, 1200ms, 1800ms, or the like, which is not limited herein.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for measuring wafer deformation is characterized by comprising the following steps:
measuring temperature difference data between different areas of the wafer or at the same position and different time periods, and establishing corresponding standard function samples by using the temperature difference data and the deformation value of the corresponding area of the wafer;
and judging the deformation states of different wafers in the heating process according to the standard function samples.
2. The method as claimed in claim 1, wherein the wafer is heated by a heating plate, a plurality of temperature sensors are uniformly disposed on the heating plate, real-time temperatures of different regions of the wafer are measured by the plurality of temperature sensors, and temperature difference data between the different regions of the wafer is calculated by the real-time temperatures.
3. The method of claim 2, wherein the wafer is cooled to room temperature by cooling the wafer with a cooling plate before heating the wafer.
4. The measurement method according to claim 2 or 3, wherein the different regions of the wafer comprise a central region and an edge region of the wafer, and the plurality of temperature sensors are uniformly distributed in the central region and the edge region, respectively.
5. The method as claimed in claim 4, wherein determining the deformation status of different wafers during the heating process according to the standard function sample comprises:
if the temperature change rate of the central area is smaller than that of the edge area, judging that the wafer is subjected to convex deformation;
and if the temperature change rate of the edge area is smaller than that of the central area, judging that the wafer is subjected to concave deformation.
6. The measurement method of claim 4, wherein the heating plate is a circular plate, a center area of the circular plate corresponds to a center area of the wafer, and an edge area of the circular plate corresponds to an edge area of the wafer; the quantity of temperature sensor is 15, and wherein 3 temperature sensor evenly distributed in the central zone of hot plate, the remaining 12 temperature sensor evenly distributed along circumference is in the border area of hot plate.
7. The measuring method according to claim 4, wherein the heating temperature of the heating plate is controlled to be between 60 ℃ and 400 ℃; and/or the temperature detection period of the temperature sensor is between 10ms and 2000 ms.
8. The method of claim 7, wherein the heating temperature of the heating plate is decreased as the temperature difference data is gradually increased, and the heating temperature of the heating plate is increased as the temperature difference data is gradually decreased.
9. The method of claim 7, wherein the heating plate controls the heating temperature using a controller connected thereto.
10. The measurement method according to claim 4, wherein the temperature sensor comprises a PT100 sensor or a MEMS sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011562875.2A CN114678286A (en) | 2020-12-25 | 2020-12-25 | Method for measuring wafer deformation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011562875.2A CN114678286A (en) | 2020-12-25 | 2020-12-25 | Method for measuring wafer deformation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114678286A true CN114678286A (en) | 2022-06-28 |
Family
ID=82070274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011562875.2A Pending CN114678286A (en) | 2020-12-25 | 2020-12-25 | Method for measuring wafer deformation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114678286A (en) |
-
2020
- 2020-12-25 CN CN202011562875.2A patent/CN114678286A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5147498A (en) | Apparatus for controlling temperature in the processing of a substrate | |
| JP5173092B2 (en) | Temperature control method for processing chamber, semiconductor processing apparatus, and sensor calibration method | |
| US7492176B2 (en) | Prober and probe contact method | |
| CN103858214B (en) | Rapid thermal processing chamber | |
| WO2018169765A1 (en) | Non-contact temperature calibration tool for a substrate support and method of using the same | |
| JPH113868A (en) | Device and method for lamp annealing | |
| JP4426024B2 (en) | Temperature calibration method for heat treatment equipment | |
| CN111900076A (en) | Temperature control method for wafer baking | |
| JP2012151247A (en) | Substrate heating apparatus, substrate heating method and storage medium | |
| CN114678286A (en) | Method for measuring wafer deformation | |
| CN110707035A (en) | Electrostatic chuck, semiconductor processing chamber and apparatus | |
| KR100413646B1 (en) | Temperature-detecting element | |
| CN208954953U (en) | Wafer position detection device | |
| US20010025795A1 (en) | Apparatus for Heat-treating substrate | |
| CN113506753A (en) | Method for detecting plane deformation of silicon wafer | |
| US20190376919A1 (en) | Contact combustion type gas sensor and method for manufacturing the same | |
| CN220731450U (en) | Constant temperature system of etching equipment and etching equipment | |
| CN218182172U (en) | Heating device for controlling wafer warping | |
| JP2004260097A (en) | Method for thermally processing semiconductor | |
| US11688614B2 (en) | Mitigating thermal expansion mismatch in temperature probe construction apparatus and method | |
| KR200240059Y1 (en) | Temperature regulating device in heat treatment device of semiconductor device | |
| JP3571634B2 (en) | Substrate processing equipment | |
| JP2007234645A (en) | Prober temperature controller and control method | |
| KR100503515B1 (en) | Apparatus of temperature calibration and method of temperature calibration using the same | |
| JPH0563054A (en) | Method and device for wafer temperature measurement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |