CN114665902A - Radio frequency device and electronic equipment based on low temperature co-fired ceramic - Google Patents
Radio frequency device and electronic equipment based on low temperature co-fired ceramic Download PDFInfo
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- CN114665902A CN114665902A CN202011535296.9A CN202011535296A CN114665902A CN 114665902 A CN114665902 A CN 114665902A CN 202011535296 A CN202011535296 A CN 202011535296A CN 114665902 A CN114665902 A CN 114665902A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Abstract
The embodiment of the application discloses a radio frequency device based on low-temperature co-fired ceramic and electronic equipment. The radio frequency device comprises a base body, an input end electrode and an output end electrode, wherein the input end electrode and the output end electrode are arranged on the outer side of the base body, the radio frequency device further comprises an input end inner electrode and an output end inner electrode, the input end inner electrode comprises a first connecting end, the output end inner electrode comprises a second connecting end, the first connecting end is tightly attached to the input end electrode, the width of the first connecting end, which is contacted with the input end electrode, is a first width, the second connecting end is tightly attached to the output end electrode, the width of the second connecting end, which is contacted with the output end electrode, is a second width, and at least one of the first width and the second width is larger than 100 um. By adopting the embodiment of the application, the port electrical communication rate of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved.
Description
Technical Field
The embodiment of the application relates to a communication equipment part, in particular to a radio frequency device based on low-temperature co-fired ceramic and electronic equipment.
Background
Low Temperature Co-fired Ceramics (LTCC) adopts a multilayer ceramic Co-firing process, and a passive device can be placed in a ceramic medium. The low-temperature co-fired ceramic radio frequency device can be used as a novel device in the field of 5G, so that the demand of the low-temperature co-fired ceramic radio frequency device is greatly increased in recent years.
However, in the manufacturing process of the low-temperature co-fired ceramic radio frequency device, particularly after the sintering process, shrinkage deformation of the ceramic body is likely to occur, for example, a sidewall port of the low-temperature co-fired ceramic radio frequency device may be recessed, which may result in poor electrical connection performance between the sidewall port of the low-temperature co-fired ceramic radio frequency device and an external electrode, reduce reliability of the low-temperature co-fired ceramic radio frequency device product, and affect the yield of the product.
Disclosure of Invention
The embodiment of the application provides a radio frequency device and electronic equipment based on low-temperature co-fired ceramic, and by adopting the embodiment of the application, the port electrical communication rate of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
In a first aspect, an embodiment of the present application provides a radio frequency device based on low-temperature co-fired ceramic, including a base, an input electrode and an output electrode disposed outside the base, the radio frequency device further includes:
the input end internal electrode comprises a first connecting end electrically connected with the input end electrode, the first connecting end is closely attached to the input end electrode, and the width of the first connecting end in contact with the input end electrode is a first width;
the output end internal electrode comprises a second connecting end electrically connected with the output end electrode, the second connecting end is closely attached to the output end electrode, and the width of the second connecting end in contact with the output end electrode is a second width;
wherein at least one of the first width and the second width is greater than 100 um.
By adopting the embodiment of the application, the radio frequency device comprises the input end inner electrode and the output end inner electrode, the first connecting end of the input end inner electrode and the second output end of the output end inner electrode are respectively contacted with the input end electrode and the output end electrode, the contact width of the first connecting end and the input end electrode is the first width, the contact width of the second connecting end and the output end electrode is the second width, and at least one of the first width and the second width is more than 100 um. Based on the design, the width of the contact between the connecting end of the radio frequency device and the input end electrode or the output end electrode is increased, so that the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
With reference to the first aspect, in one possible design, the first connection terminal is connected to the input terminal electrode on the bottom side of the substrate through at least one conductive via; and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
With reference to the first aspect, in one possible design, the second connection terminal is connected to the output terminal electrode at the bottom side of the substrate through at least one conductive via; and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
With reference to the first aspect, in one possible design, at least one of the first width and the second width is greater than 200um or greater than 300 um. Based on the design, the width of the contact between the connecting end of the radio frequency device and the input end electrode or the output end electrode is increased, so that the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
With reference to the first aspect, in one possible design, the first connection end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure, and a double-port structure; and/or the second connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure.
In a second aspect, an embodiment of the present application further provides a low-temperature co-fired ceramic-based radio frequency device, including a substrate, an input electrode and an output electrode disposed outside the substrate, the radio frequency device further including:
an input end inner electrode and an output end inner electrode;
at least one of the input-side internal electrode and the output-side internal electrode includes a plurality of connection terminals;
the plurality of connecting ends are tightly attached to the input end electrode; and/or the plurality of connecting ends are tightly attached to the output end electrode.
By adopting the embodiment, the electrical connection rate of the connecting ends of the low-temperature co-fired ceramic radio frequency device can be improved by arranging the plurality of connecting ends on at least one of the input end inner electrode and the output end inner electrode, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be further improved.
With reference to the second aspect, in one possible design, the input-side inner electrode includes a plurality of first connection terminals, and a width of the first connection terminals contacting the input-side electrode is a first width. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and further the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved.
With reference to the second aspect, in one possible design, the output-side internal electrode includes a plurality of second connection terminals, and a width of the second connection terminals contacting the output-side electrode is a second width. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and further the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved.
With reference to the second aspect, in one possible design, at least one of the first width and the second width is greater than 100 um. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and further the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved. In another embodiment, at least one of the first width and the second width may be greater than 200um, or may be greater than 300um, which is more effective.
With reference to the second aspect, in one possible design, the first connection terminal is connected to the input terminal electrode on the bottom side of the substrate through at least one conductive through hole; and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and further the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved.
With reference to the second aspect, in one possible design, the second connection terminal is connected to the output terminal electrode at the bottom side of the substrate through at least one conductive via; and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole. Based on the design, the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and further the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device can be improved.
With reference to the second aspect, in one possible design, the first connection end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure, and a dual-port structure; and/or the second connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure.
In a third aspect, an embodiment of the present application further provides a low-temperature co-fired ceramic-based radio frequency device, including a substrate, an input terminal electrode and an output terminal electrode, which are disposed outside the substrate, and the radio frequency device further includes:
the input end internal electrode comprises a first connecting end electrically connected with the input end electrode, the first connecting end is closely attached to the input end electrode, the first connecting end is connected with the input end electrode on the bottom side of the base body through at least one conductive through hole, and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole;
the output end internal electrode comprises a second connecting end electrically connected with the output end electrode, the second connecting end is tightly attached to the output end electrode, the second connecting end is connected with the output end electrode on the bottom side of the base body through at least one conductive through hole, and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole.
In a fourth aspect, an embodiment of the present application further provides an electronic device, including a circuit board, on which the radio frequency device is mounted.
With reference to the fourth aspect, in a possible design, the radio frequency device is mounted on the circuit board by soldering or crimping. Based on the design, the reliability of the electronic equipment can be improved, and the user experience is improved.
The radio frequency device comprises an input end inner electrode and an output end inner electrode, a first connecting end of the input end inner electrode and a second output end of the output end inner electrode are respectively in contact with the input end electrode and the output end electrode, the width of the first connecting end in contact with the input end electrode is a first width, the width of the second connecting end in contact with the output end electrode is a second width, and at least one of the first width and the second width is larger than 100 micrometers. Based on the design, the width of the contact between the connecting end of the radio frequency device and the input end electrode or the output end electrode is increased, so that the electrical communication rate of the connecting end of the low-temperature co-fired ceramic radio frequency device can be improved, and the reliability and the qualification rate of the low-temperature co-fired ceramic radio frequency device are improved.
Drawings
FIGS. 1a-1d are schematic diagrams of the connection ends of the sidewalls of a low temperature co-fired ceramic RF device.
Fig. 2a-2c are schematic views of the connection terminals on the outside of the rf device in contact with conductors printed on the side walls.
Fig. 3 is a schematic external structural diagram of the radio frequency device in the embodiment of the present application.
Fig. 4 is an internal circuit diagram of the radio frequency device in the embodiment of the present application.
Fig. 5 is a perspective view of the rf device in the embodiment of the present application.
Fig. 6 is a front view structural diagram of the radio frequency device in the embodiment of the present application.
Fig. 7 is a schematic diagram of an rf device in an embodiment of the present application.
Fig. 8 is a schematic diagram of another embodiment of a radio frequency device of the present application.
Fig. 9 is a schematic diagram of another embodiment of a radio frequency device of the present application.
Fig. 10 is a schematic diagram of another embodiment of a radio frequency device of the present application.
Fig. 11 is another schematic diagram of the first connection terminal and the second connection terminal of the rf device in the embodiment of the present application.
Fig. 12 is a schematic diagram between the first connection terminal and the input terminal electrode.
Fig. 13a-13f are schematic views of a first link end or a second link end in an embodiment of the present application.
Fig. 14 and 15 are Smith charts of different widths of the first and second connection terminals of the rf device.
Fig. 16 and 17 are Smith charts of different widths of the first and second connection terminals of the rf device.
Fig. 18 is a comparison graph of S-parameter curves when the widths of the first connection end and the second connection end of the rf device are smaller than the threshold and when the widths of the first connection end and the second connection end are larger than the threshold.
Fig. 19 is a Smith chart comparing the widths of the first connection terminal and the second connection terminal of the rf device with each other when the widths are smaller than the threshold and when the widths are larger than the threshold.
Fig. 20 is a graph of group delay parameter when the widths of the first connection end and the second connection end of the rf device are greater than the threshold.
Fig. 21 is a schematic diagram of an electronic device in an embodiment of the present application.
Description of the main elements
First outer side 11
Second outer side 12
Fourth resonant cell 24
Input terminal inner electrode 40
Output end inner electrode 50
Conductive via 60
Capacitor C1-C5
The following detailed description will further illustrate the present application in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present specification, "a plurality" means two or more unless otherwise specified. In the description of the present specification, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
The process of a Low Temperature Co-fired ceramic (LTCC) radio frequency device may generally include the steps of batching, tape casting, cutting, laser drilling, printing, laminating, isostatic pressing, cutting, glue discharging, sintering, chamfering, silver dipping, silver burning, testing, taping, and the like. However, in some possible scenarios, the ceramic body may be deformed after sintering due to a Low Temperature Co-fired ceramic (LTCC) rf device.
As shown in fig. 1a to 1d, in some possible scenarios, after the low-temperature co-fired ceramic radio frequency device is subjected to a sintering process, the connection end of the side wall of the low-temperature co-fired ceramic radio frequency device is recessed, and the recessed position is located at the center of the connection port.
For this reason, the connection terminals on the side walls of the rf device may not be in contact with the silver-coated and silver-fired conductors on the side walls.
As shown in fig. 2a-2c, in some possible scenarios, the port on the sidewall of the rf device and the electrode on the sidewall are in a disconnected state, that is, the connection end of the rf device is not in direct contact with the electrode, which may result in poor electrical connection performance between the side port of the low-temperature co-fired ceramic rf device and the electrode, and may cause deterioration of S parameter of the rf device, thereby reducing reliability of the low-temperature co-fired ceramic rf device product and affecting yield of the product.
Therefore, the embodiment of the application provides a radio frequency device based on low-temperature co-fired ceramic, which solves the problem of poor connection between the low-temperature co-fired ceramic radio frequency device and an external electrode, can improve the electrical communication rate of an external port of the low-temperature co-fired ceramic radio frequency device, improves the reliability and the qualification rate of a low-temperature co-fired ceramic radio frequency device product, and ensures the radio frequency performance of the low-temperature co-fired ceramic radio frequency device.
Referring to fig. 3, a radio frequency device based on low temperature co-fired ceramic according to an embodiment of the present application will be described with reference to the accompanying drawings and a practical application scenario.
Fig. 3 is a schematic external structural diagram of an rf device 100 implemented by using a low temperature co-fired ceramic technology according to an embodiment of the present application.
As an example of the present application, the radio frequency device 100 in the present embodiment may include a base 10, an input terminal electrode 201 disposed outside the base 10, an output terminal electrode 202 disposed outside the base 10, and a ground terminal electrode 203 disposed outside the base 10.
The substrate 10 may include two oppositely disposed first and second outer sides 11, 12 and two oppositely disposed bottom and top sides 13, 14.
In the embodiment of the present application, the substrate 10 may have a rectangular parallelepiped structure. In other embodiments, the substrate 10 may have a cubic structure. The substrate 10 may be a low temperature co-fired ceramic substrate, and is made by sintering low temperature co-fired ceramic powder.
In some possible implementations, the sintering temperature may be less than or equal to 900 ℃, and an alternative sintering temperature may be 880 ℃ ± 10 ℃. The relative dielectric constant of the ceramic powder can be 4-9.8, and the dielectric loss factor tan alpha can be less than or equal to 0.002. The relative dielectric constant of the optional ceramic powder may be 7.2 + -0.5, and the optional dielectric loss tangent tan alpha may be 0.001 or less.
In one embodiment, the input terminal electrode 201 may be disposed on the first outer side 11, the bottom side 13, and the top side 14 of the base 10, and the output terminal electrode 202 may be disposed on the second outer side 12, the bottom side 13, and the top side 14 of the base 10.
It is understood that the ground terminal electrode 203 may be disposed on the outer side in the length direction of the base body 10. The input terminal electrode 201, the output terminal electrode 202, and the ground terminal electrode 203 may be terminal electrodes of the rf device 100.
Referring to fig. 4, fig. 4 is a circuit diagram of an internal circuit of the rf device 100 according to an embodiment of the present application.
As shown in fig. 4, the first terminal of the capacitor C1 is grounded through the first resonant cell 21, the second terminal of the capacitor C1 is grounded, and the first resonant cell 21 is connected to the first connection terminal 20. A first terminal of the capacitor C2 is connected to ground through the second resonator element 22 and a second terminal of the capacitor C2 is connected to ground.
A first terminal of the capacitor C3 is grounded through the third resonant cell 23, and a second terminal of the capacitor C3 is grounded. The first end of the capacitor C4 is electrically connected to the second connection terminal 30 through the fourth resonant unit 24, the fourth resonant unit 24 is electrically connected to the second connection terminal 30, the second end of the capacitor C4 is grounded, the second end of the capacitor C4 is also electrically connected to the second end of the capacitor C1 through the capacitor C5, and the capacitor C5 is a transmission zero point between the first resonant unit 21 and the fourth resonant unit 24, so that the high-performance stop band attenuation of the rf device 100 is achieved.
Referring to fig. 5 and fig. 6, fig. 5 is a perspective structural view of an rf device 100 according to an embodiment of the present application, and fig. 6 is a front structural view of the rf device 100 according to an embodiment of the present application.
It is understood that fig. 6 is a front view of the rf device 100, wherein the specific structures of the first connection terminal 20 and the second connection terminal 30 are not shown. The specific structure of the first connection end 20 and the second connection end 30 can refer to the specific structure shown in the embodiment of fig. 8 to 10.
In this embodiment, the rf device 100 may include an input end internal electrode 40 and an output end internal electrode 50, the input end internal electrode 40 may include a first connection end 20, the output end internal electrode 50 may include a second connection end 30, the first connection end 20 is electrically connected to the input end electrode 201, and the second connection end 30 is electrically connected to the output end electrode 202.
In this embodiment, the input terminal electrode 201 may be disposed on the first outer side 11, the input terminal electrode 201 may be disposed on the bottom side 13, and the input terminal electrode 201 may be disposed on the top side 14.
In this embodiment, the output terminal electrode 202 may be disposed on the second outer side 12, the output terminal electrode 202 may be disposed on the bottom side 13, and the output terminal electrode 202 may be disposed on the top side 14.
It is understood that, in one embodiment, the first connection terminal 20 may be used for connecting the input terminal electrode 201, and the second connection terminal 30 may be used for electrically connecting the output terminal electrode 202.
In one possible design, as shown in fig. 7, the rf device 100 may include an input end internal electrode 40 and an output end internal electrode 50, the input end internal electrode 40 may include a first connection terminal 20 electrically connected to the input end electrode 201, and the output end internal electrode 50 may include a second connection terminal 30 electrically connected to the output end electrode 202. The first connection terminal 20 and the second connection terminal 30 may be made of a conductive material.
It is understood that the input terminal inner electrode 40 and the output terminal inner electrode 50 are used to realize the resistance-capacitance characteristic in the resonance circuit.
In the embodiment of the present application, the first connection terminal 20 may be used to connect the input terminal electrode 201 on the first outer side 11, and the second connection terminal 30 may be used to electrically connect the output terminal electrode 202 on the second outer side 12.
Therefore, when the first connection end 20 can be used as an input port and the second connection end 30 can be used as an output port, the radio frequency device 100 can be communicatively connected with other electronic components through the first connection end 20 and the second connection end 30.
In some possible scenarios, the width of the first connection end 20 contacting the input end electrode 201 on the first outer side 11 is smaller than a threshold value, and thus may have poor electrical contact with the input end electrode 201, or the width of the second connection end 30 contacting the output end electrode 202 on the second outer side 12 is smaller than the threshold value, and thus may have poor electrical contact with the output end electrode 202, which may further reduce the electrical conductivity of the rf device 100, reduce the reliability of the low-temperature co-fired ceramic rf device, and affect the yield of the product.
To this end, in another embodiment of the present application, as shown in fig. 8, in this embodiment, the rf device 100 may include an input end internal electrode 40 and an output end internal electrode 50, the input end internal electrode 40 may include a first connection terminal 20 electrically connected to the input end electrode 201, and the output end internal electrode 50 may include a second connection terminal 30 electrically connected to the output end electrode 202. The first connection 20 is tightly attached to the input terminal electrode 201 on the first outer side 11, and the second connection 30 is tightly attached to the output terminal electrode 202 on the second outer side 12. The width of the first connection end 20 contacting the input end electrode 201 on the first outer side 11 is a first width. The width of the second connection terminal 30 contacting the output terminal electrode 202 on the second outer side 12 is a second width. Wherein at least one of the first width and the second width is greater than 100 um. In some possible implementations, at least one of the first width and the second width is greater than 200um or 300 um.
Compared with the embodiment shown in fig. 7, in this embodiment, the width of the first connection terminal 20 contacting the input terminal electrode 201 on the first outer side 11 is greater than 100 um. Therefore, the contact area between the first connection end 20 and the input terminal electrode 201 on the first outer side 11 can be increased, and the electrical conductivity between the first connection end 20 and the input terminal electrode 201 can be increased. Since the width of the second connection terminal 30 in contact with the output terminal electrode 202 on the second outer side 12 is larger than 100 um. Therefore, the contact area between the second connection end 30 and the output end electrode 202 on the second outer side 12 can be increased, and the electrical conductivity between the second connection end 30 and the output end electrode 202 can be increased.
With this embodiment, the problem of poor electrical contact between the first connection terminal 20 and the input terminal electrode 201 or between the second connection terminal 30 and the output terminal electrode 202 can be solved.
In this embodiment, the S parameter simulation is performed by using the connection end having a width of 100um and the connection end having a width of 200um, so that the simulation data of table 1 below can be obtained.
TABLE 1
From table 1 above, the return loss of the rf device 100 is greater than 15dB, and therefore, the variation of the widths of the first connection end and the second connection end of the rf device 100 does not affect the critical electrical performance of the rf device 100.
In this embodiment, Smith chart simulation is performed by using the connection end with the width of 100um and the connection end with the width of 200um, so as to obtain the simulation data as shown in table 2 below.
TABLE 2
As can be seen from table 2, the impedance change of S11 and the impedance change of S22 of the rf device 100 are both less than or equal to 1 ohm, and therefore, the change of the connection end width of the rf device 100 does not affect the rf specification of the rf device 100.
It is understood that in some possible implementations, at least one of the input end internal electrode 40 and the output end internal electrode 50 may include a plurality of connection terminals.
Referring to fig. 9, fig. 9 is a schematic structural diagram of another embodiment of a radio frequency device 100 provided in the present application.
The difference from the embodiment of the rf device 100 shown in fig. 8 is that, as shown in fig. 9, in this embodiment, the input-side internal electrode 40 of the rf device 100 may include two first connection terminals 20, and the output-side internal electrode 50 may include two second connection terminals 30. In this embodiment, the two first connection terminals 20 are electrically connected to the input-side inner electrode 40, and the two second connection terminals 30 are electrically connected to the output-side inner electrode 50.
It can be understood that the two first connection terminals 20 in this embodiment are closely attached to the input terminal electrodes 201 on the first outer side 11. The two second connection ends 30 in this embodiment are both closely attached to the output terminal electrode 202 on the second outer side 12.
In this embodiment, the width of the first connection end 20 contacting the input end electrode 201 on the first outer side 11 is a first width, and the width of the second connection end 30 contacting the output end electrode 202 on the second outer side 12 is a second width. Wherein at least one of the first width and the second width is greater than 100 um.
It can be understood that in the embodiment of the present application, the first width of the first connection end 20 contacting the input end electrode 201 on the first outer side 11 may be greater than 200um, or the second width of the second connection end 30 contacting the output end electrode 202 on the second outer side 12 may be greater than 100um, or both the first width and the second width may be greater than 100 um.
With this embodiment, when one of the first connection terminals 20 is in poor electrical contact with the input terminal electrode 201, the other first connection terminal 20 may be electrically connected with the input terminal electrode 201, so that the electrical conductivity of the rf device 100 may be improved. When one of the second connection terminals 30 is in poor electrical contact with the output terminal electrode 202, the other second connection terminal 30 can be electrically connected with the output terminal electrode 202, so that the electrical conductivity of the radio frequency device 100 can be improved.
Referring to fig. 10, fig. 10 is a schematic structural diagram of another embodiment of a radio frequency device 100 provided in the present application.
The difference from the embodiment of the rf device 100 shown in fig. 9 is that, as shown in fig. 10, in this embodiment, the input-side internal electrode 40 in the rf device 100 may include three first connection terminals 20, and the output-side internal electrode 50 in the rf device 100 may include three second connection terminals 30.
It can be understood that the three first connection terminals 20 in this embodiment are closely attached to the input terminal electrode 201 on the first outer side 11. The three second connection terminals 30 in this embodiment are closely attached to the output terminal electrode 202 on the second outer side 12.
It can be understood that the first width of the first connection end 20 contacting the input end electrode 201 on the first outer side 11 in this embodiment may be greater than 100um, the second width of the second connection end 30 contacting the output end electrode 202 on the second outer side 12 may be greater than 100um, or both the first width and the second width may be greater than 100 um.
With this embodiment, when one or two first connection terminals 20 are in poor electrical contact with the input terminal electrode 201, the other first connection terminal 20 may be electrically connected with the input terminal electrode 201, so that the electrical conductivity of the rf device 100 may be improved. When one or two of the second connection terminals 30 are in poor electrical contact with the output terminal electrode 202, the other second connection terminal 30 can be electrically connected with the output terminal electrode 202, so that the electrical conductivity of the radio frequency device 100 can be improved.
Referring to fig. 11, fig. 11 is a schematic structural diagram of another embodiment of a radio frequency device 100 provided in the present application.
The difference from the embodiment of the rf device 100 shown in fig. 8 is that in this embodiment, as shown in fig. 11, the input terminal inner electrode 40 in the rf device 100 may include a first connection terminal 20, the output terminal inner electrode 50 in the rf device 100 may include a second connection terminal 30, and the first connection terminal 20 may be further electrically connected to the input terminal electrode 201 of the bottom side 13 through at least one conductive via 60. In other embodiments, the first connection terminal 20 may also be electrically connected to the input terminal electrode 201 of the top side 14 through at least one conductive via 60.
In this embodiment, the second connection terminal 30 can be electrically connected to the output terminal electrode 202 of the bottom side 13 through at least one conductive via 60. In other embodiments, the second connection 30 may also be electrically connected to the output electrode 202 of the top side 14 via at least one conductive via 60.
In this embodiment, the conductive vias 60 may be conductive metal vias, which may be formed by laser drilling and silver paste injection, such as silver or copper.
If the electrical contact between the first connection terminal 20 and the input terminal electrode 201 on the first outer side 11 is poor, the first connection terminal 20 can also be electrically connected to the input terminal electrode 201 of the bottom side 13 or the top side 14 through the at least one conductive via 60.
If the electrical contact between the second connection 30 and the output electrode 202 on the second outer side 12 is poor, the second connection 30 can also be electrically connected to the output electrode 202 of the bottom side 13 or the top side 14 through the one conductive via 60.
For example, as shown in fig. 12, in a possible scenario, if the electrical contact between the first connection end 20 and the input end electrode 201 on the first outer side 11 is poor, even if the first connection end 20 is 0.01mm away from the input end electrode 201 on the first outer side 11, the first connection end 20 of the rf device 100 may be electrically connected to the input end electrode 201 by providing at least one conductive via 60 between the first connection end 20 and the input end electrode 201 on the bottom side 13 or the top side 14, so that the rf performance and reliability of the rf device 100 may be ensured.
Similarly, even if the second connection terminal 30 is disconnected from the output terminal electrode 202 on the second outer side 12 by 0.01mm, the second connection terminal 30 of the rf device 100 can still be electrically connected to the output terminal electrode 202 by disposing at least one conductive via 60 between the second connection terminal 30 and the output terminal electrode 202 on the bottom side 13 or the top side 14, thereby ensuring the rf performance and reliability of the rf device 100.
By adopting the embodiment, the conductive through holes can be arranged between the first connection end and the second connection end and the input/output external electrodes, and can be connected to the external electrodes of the radio frequency device 100 in a manner of filling silver paste, so that the radio frequency performance and reliability of the radio frequency device 100 are ensured.
It is understood that the shape of the first connection end 20 or the second connection end 30 can be various, as shown in fig. 13a, and in one embodiment, the first connection end 20 or the second connection end 30 can be a T-shaped structure. As shown in fig. 13b, in one embodiment, the first connection end 20 or the second connection end 30 may be a double T-shaped structure. As shown in fig. 13c, in one embodiment, the first connection end 20 or the second connection end 30 may have three T-shaped structures. As shown in fig. 13d, in one embodiment, the first connection end 20 or the second connection end 30 may have a T-shaped + horn structure. As shown in fig. 13e, in one embodiment, the first connection end 20 or the second connection end 30 may be in a flared configuration. As shown in fig. 13f, in one embodiment, the first connection end 20 or the second connection end 30 may be a dual port structure.
Fig. 14 and fig. 15 are Smith charts showing the frequency of 2.45GHz-2.72 GHz when the width of the first connection terminal 20 contacting the input terminal electrode 201 and the width of the second connection terminal 30 contacting the output terminal electrode 202 of the rf device 100 are both smaller than the threshold. Fig. 14 is a Smith circle of the first connection terminal S11 when the width of the first connection terminal contacting the input terminal electrode is less than a threshold value (e.g., 100um), and fig. 15 is a Smith circle of the second connection terminal S22 when the width of the second connection terminal contacting the output terminal electrode is less than the threshold value (e.g., 100 um).
Fig. 16 and 17 are Smith charts showing that the frequency is 2.45GHz-2.72 GHz when at least one of the width of the first connection terminal 20 contacting the input terminal electrode 201 and the width of the second connection terminal 30 contacting the output terminal electrode 202 of the rf device 100 is greater than a threshold. Fig. 16 is a Smith circle of the first connection terminal S11 when the width of the first connection terminal in contact with the input terminal electrode is greater than the threshold value, and fig. 17 is a Smith circle of the second connection terminal S22 when the width of the second connection terminal in contact with the output terminal electrode is greater than the threshold value.
As can be seen from comparison between fig. 14 and fig. 16, compared with a usage scenario in which the contact width between the first connection end and the input end electrode is smaller than the threshold, in the Smith chart parameter of S11 in the present embodiment, the change of the width of the connection portion between the inner electrode and the outer electrode can keep or ensure that the key performance of the radio frequency device 100 does not change basically, and the radio frequency performance and reliability of the radio frequency device 100 are met.
As can be seen from comparison between fig. 15 and fig. 17, compared with the usage scenario in which the width of the contact between the second connection end and the output end electrode is smaller than the threshold (for example, 100um), in the Smith chart parameter of S22, the change of the width of the connection portion between the inner electrode and the outer electrode in the second connection end and the output end electrode is larger than the threshold, so that the key performance of the radio frequency device 100 can be kept or ensured not to change basically, and the radio frequency index of the radio frequency device is met, and therefore, the radio frequency performance and reliability of the radio frequency device 100 can be ensured.
Fig. 18 is a comparison graph of S-parameter curves when at least one of the width of the first connection terminal 20 in contact with the input terminal electrode 201 and the width of the second connection terminal 30 in contact with the output terminal electrode 202 of the rf device 100 is greater than a threshold value (for example, 100um) and both the widths of the first connection terminal 20 in contact with the input terminal electrode 201 and the widths of the second connection terminal 30 in contact with the output terminal electrode 202 are less than the threshold value.
Fig. 19 is a Smith chart comparing the width of the first connection terminal 20 and the second connection terminal 30 of the rf device 100 is smaller than the threshold value and the width of the first connection terminal 20 and the second connection terminal 30 is greater than or equal to the threshold value (for example, 100 um).
Fig. 20 is a group delay parameter curve diagram when at least one of the contact width between the first connection end 20 and the input end electrode 201 and the contact width between the second connection end 30 and the output end electrode 202 of the radio frequency device 100 is greater than a threshold (for example, 100um) when both the contact width between the first connection end 20 and the input end electrode 201 and the contact width between the second connection end 30 and the output end electrode 202 are smaller than the threshold (for example, 100 um).
As can be seen from the S parameter in fig. 18, the Smith chart in fig. 19, and the group delay parameter comparison chart in fig. 20, when at least one of the width of the first connection terminal 20 of the radio frequency device 100 contacting the input terminal electrode 201 and the width of the second connection terminal 30 contacting the output terminal electrode 202 is greater than a threshold (e.g., 100um), the return loss is greater than 20db, the electrical property change of the radio frequency device 100 is very small, the impedance change is also within 1 ohm, the electrical property of the radio frequency device 100 is qualified, the radio frequency index of the radio frequency device is satisfied, and the reliability of the radio frequency device is improved.
It is understood that in some possible implementations, the rf device 100 provided in the embodiments of the present application may be a filter, a power divider, an impedance transformer, a coupler, and an antenna based on a low temperature co-fired ceramic process.
For example, taking a 5G communication system architecture as an example, a scenario in which the rf device based on the Low-temperature co-fired ceramic in the embodiment of the present application is used may include radio frequency devices such as a Balun (Balun), a three-decibel Coupler (3dB Coupler), a band-pass filter (BPF) Low-pass filter (Low-pass filter, LPF), and a Power Divider (Power Divider).
Referring to fig. 21, an embodiment of the present application further provides an electronic device 300, where the electronic device 300 may be a notebook computer, a wearable device, an unmanned aerial vehicle, a mobile phone, a router, an enterprise wireless access device, an access network fixed terminal, and the like, which is not limited in this application.
As shown in fig. 21, the electronic device 300 may include a circuit board 200, and the radio frequency device 100 described in the above embodiments is mounted on the circuit board 200, and in some possible implementation embodiments, the radio frequency device 100 and the circuit board 200 are mounted by soldering or crimping. Compared with the radio frequency device formed by the existing processing technology, the radio frequency device 100 can improve the electrical communication rate of the outer wall port of the low-temperature co-fired ceramic radio frequency device, can meet the application requirements, and improves the use experience of users.
It will be evident to those skilled in the art that the application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. Therefore, appropriate changes and modifications to the above embodiments should be made within the spirit and scope of the present application, which is claimed in the present application.
Claims (16)
1. The radio frequency device based on the low-temperature co-fired ceramic comprises a base body, an input end electrode and an output end electrode, wherein the input end electrode and the output end electrode are arranged on the outer side of the base body, and the radio frequency device is characterized by further comprising:
the input end internal electrode comprises a first connecting end electrically connected with the input end electrode, the first connecting end is closely attached to the input end electrode, and the width of the first connecting end in contact with the input end electrode is a first width;
the output end internal electrode comprises a second connecting end electrically connected with the output end electrode, the second connecting end is closely attached to the output end electrode, and the width of the second connecting end in contact with the output end electrode is a second width;
wherein at least one of the first width and the second width is greater than 100 um.
2. The radio frequency device according to claim 1,
the first connecting end is connected with the input end electrode at the bottom side of the substrate through at least one conductive through hole;
and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole.
3. The radio frequency device according to claim 1 or 2,
the second connecting end is connected with the output end electrode at the bottom side of the substrate through at least one conductive through hole;
and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole.
4. The radio frequency device according to any one of claims 1 to 3,
at least one of the first width and the second width is greater than 200um or greater than 300 um.
5. The radio frequency device according to any one of claims 1 to 4,
the first connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure;
and/or the second connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure.
6. The utility model provides a radio frequency device based on low temperature burns pottery altogether, includes the base member, sets up input electrode and output terminal electrode in the base member outside, its characterized in that, the radio frequency device still includes:
an input end inner electrode and an output end inner electrode;
at least one of the input-side internal electrode and the output-side internal electrode includes a plurality of connection terminals;
the plurality of connecting ends are tightly attached to the input end electrode;
and/or the plurality of connecting ends are tightly attached to the output end electrode.
7. The radio frequency device according to claim 6,
the input end inner electrode comprises a plurality of first connection ends, and the width of the first connection ends, which is in contact with the input end electrode, is a first width.
8. The radio frequency device according to claim 6 or 7,
the output end inner electrode comprises a plurality of second connecting ends, and the width of the second connecting ends in contact with the output end electrode is a second width.
9. The radio frequency device according to claim 8,
at least one of the first width and the second width is greater than 100 um.
10. The radio frequency device according to claim 9,
at least one of the first width and the second width is greater than 200um or greater than 300 um.
11. The radio frequency device according to any one of claims 7 to 10,
the first connecting end is connected with the input end electrode at the bottom side of the substrate through at least one conductive through hole;
and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole.
12. The radio frequency device according to any one of claims 8 to 11,
the second connecting end is connected with the output end electrode at the bottom side of the substrate through at least one conductive through hole;
and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole.
13. The radio frequency device according to any one of claims 8 to 12,
the first connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure;
and/or the second connecting end is any one of a T-shaped structure, a double-T-shaped structure, a T-shaped horn structure, a horn mouth structure and a double-port structure.
14. The radio frequency device based on the low-temperature co-fired ceramic comprises a base body, an input end electrode and an output end electrode, wherein the input end electrode and the output end electrode are arranged on the outer side of the base body, and the radio frequency device is characterized by further comprising:
the input end internal electrode comprises a first connecting end electrically connected with the input end electrode, the first connecting end is closely attached to the input end electrode, the first connecting end is connected with the input end electrode on the bottom side of the base body through at least one conductive through hole, and/or the first connecting end is connected with the input end electrode on the top side of the base body through at least one conductive through hole;
the output end internal electrode comprises a second connecting end electrically connected with the output end electrode, the second connecting end is tightly attached to the output end electrode, the second connecting end is connected with the output end electrode on the bottom side of the base body through at least one conductive through hole, and/or the second connecting end is connected with the output end electrode on the top side of the base body through at least one conductive through hole.
15. An electronic device comprising a circuit board, wherein the circuit board has mounted thereon a radio frequency device as claimed in any one of claims 1 to 5 or a radio frequency device as claimed in any one of claims 6 to 13 or a radio frequency device as claimed in claim 14.
16. The electronic device of claim 15,
the radio frequency device and the circuit board are mounted in a welding or crimping mode.
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| CN202011535296.9A CN114665902A (en) | 2020-12-22 | 2020-12-22 | Radio frequency device and electronic equipment based on low temperature co-fired ceramic |
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