CN114628576A - Magnetic tunnel junction laminated structure, memory and neural network computing device - Google Patents

Magnetic tunnel junction laminated structure, memory and neural network computing device Download PDF

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CN114628576A
CN114628576A CN202011468695.8A CN202011468695A CN114628576A CN 114628576 A CN114628576 A CN 114628576A CN 202011468695 A CN202011468695 A CN 202011468695A CN 114628576 A CN114628576 A CN 114628576A
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free layer
magnetization
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tunnel junction
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李州
孟皓
迟克群
石以诺
张文彪
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Hikstor Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
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    • G11—INFORMATION STORAGE
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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Abstract

The present invention provides a magnetic tunnel junction stack structure, comprising: the spin orbit torque providing layer, the first free layer, the coupling layer, the second free layer, the barrier layer and the reference layer are sequentially stacked from bottom to top; wherein one of the first free layer and the second free layer is in-plane magnetization mode, and the other is perpendicular magnetization mode; the reference layer is magnetized in the same manner as the second free layer. The magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two magnetization modes can be used to adapt to various applications.

Description

Magnetic tunnel junction laminated structure, memory and neural network computing device
Technical Field
The invention relates to the technical field of computer storage, in particular to a magnetic tunnel junction laminated structure, a memory, a neural network computing device and a spin oscillator.
Background
A Magnetic Tunnel Junction (MTJ) includes a free layer, a barrier layer, and a reference layer. Generally used in non-volatile memory devices, the magnetization direction of the reference layer is fixed and the magnetization direction of the free layer is variable. When the free layer and the reference layer are parallel, the magnetic tunnel junction is in a low resistance state; when the free layer and the reference layer are antiparallel, the magnetic tunnel junction is in a high resistance state. The change of the magnetization direction of the free layer is generally realized by a spin orbit torque providing layer, the spin orbit torque providing layer generally adopts Heavy Metal (HM), and when current flows through the HM, the magnetic moment of the free layer is turned over by the aid of an external magnetic field or by arranging a magnetic bias layer.
In the process of implementing the invention, the inventor finds that at least the following technical problems exist in the prior art: at present, a magnetic memory based on spin orbit torque generally needs an external magnetic field, the overturning efficiency is low, the magnetization of a free layer of a magnetic tunnel junction has only two states, and the application is single.
Disclosure of Invention
The invention provides a magnetic tunnel junction laminated structure, a memory, a neural network computing device and a spin oscillator; the magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two magnetization modes can be used to adapt to various applications.
In a first aspect, the present invention provides a magnetic tunnel junction stack structure, comprising: the spin orbit torque providing layer, the first free layer, the coupling layer, the second free layer, the barrier layer and the reference layer are sequentially stacked from bottom to top; wherein the content of the first and second substances,
one of the first free layer and the second free layer is in-plane magnetization mode, and the other is in perpendicular magnetization mode;
the magnetization pattern of the reference layer is the same as the magnetization pattern of the second free layer.
Optionally, the coupling layer comprises:
a first capping region overlying an upper surface of the first free layer;
a second cover region covering a region of the upper surface of the spin orbit torque providing layer other than the first free layer cover region.
Optionally, the spin hall angle of the coupling layer is opposite in direction to the spin hall angle of the free orbit torque providing layer.
Optionally, one of the coupling layer and the spin orbit torque providing layer is made of one or more of Pt, Pd, Ir, and Au, and the other one of the coupling layer and the spin orbit torque providing layer is made of one or more of Ta, W, and Mo.
Optionally, the materials of the first free layer, the second free layer and the reference layer include one or more of Co, Fe, Ni, B, Pd or Pt; the barrier layer is made of MgO and MgAl2O4Or Al2O3One or more of them.
In a second aspect, the present invention provides a memory comprising:
any one of the magnetic tunnel junction stack structures described above; the first free layer is in an in-plane magnetization mode, and the second free layer and the reference layer are in a perpendicular magnetization mode; the saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship: the | Ms1-Ms2|/Ms2 is more than or equal to 20 percent; wherein Ms1 is the saturation magnetization of the first free layer and Ms2 is the saturation magnetization of the second free layer;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents, the directions of the currents being in-plane and perpendicular to the first free layer magnetization direction.
In a third aspect, the present invention further provides a multi-resistance state memory, including:
any one of the magnetic tunnel junction stack structures described above;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents.
Optionally, the first free layer is in a perpendicular magnetization mode, and the second free layer and the reference layer are in an in-plane magnetization mode.
In a fourth aspect, the present invention also provides a neural network computing device, comprising
Any one of the magnetic tunnel junction stack structures described above; the current value storage unit is used for storing corresponding weight values according to various currents;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents.
In a fifth aspect, the present invention also provides a spin oscillator, comprising:
any one of the magnetic tunnel junction stack structures described above;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a current to the spin orbit torque providing layer that is greater than three times an inversion current of the first free layer.
The magnetic tunnel junction laminated structure provided by the invention has two free layers, and the first free layer and the second free layer can have magnetization components in the in-plane direction and the vertical direction through the matching of a coupling action on a magnetization mode, namely, each free layer has the magnetization components in two directions, and the magnetization components of the two free layers are turned over in different current driving modes. The structure can realize high-efficiency turnover without an external magnetic field and can realize various states, so that the magnetic tunnel junction can be more widely applied.
Drawings
FIG. 1 is a schematic structural diagram of a magnetic tunnel junction stack structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing two magnetic moment variations of a magnetic tunnel junction stack structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the variation of magnetic moment oscillation of a magnetic tunnel junction stack structure according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a magnetic tunnel junction stack structure according to another embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating various magnetic moment variations of a magnetic tunnel junction stack structure according to another embodiment of the present invention;
FIG. 7 is a diagram illustrating various resistance variations of a magnetic tunnel junction stack structure according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a magnetic tunnel junction stack structure, as shown in fig. 1, including: a spin orbit torque providing layer 100, a first free layer 200, a coupling layer 300, a second free layer 400, a barrier layer 500, and a reference layer 600 sequentially stacked from bottom to top; wherein one of the first free layer 200 and the second free layer 400 is in-plane magnetized and the other is perpendicular magnetized; the reference layer 600 is magnetized in the same manner as the second free layer 400. In the present embodiment, the magnetization direction of the reference layer 600 is fixed, and the magnetization directions of the first and second free layers 200 and 400 are variable. The reference layer 600 and the second free layer 400 are both perpendicular magnetization or both in-plane magnetization, and the first free layer 200 and the second free layer 400 have different magnetization directions. If the second free layer 400 is in-plane magnetized, the first free layer 200 is perpendicularly magnetized; if the second free layer 400 is perpendicularly magnetized, the first free layer 200 is in-plane magnetized. The spin orbit torque providing layer 100 passes a current, and the in-plane magnetization direction of the first free layer 200 or the second free layer 400 is perpendicular to the current direction. When current passes through the spin orbit torque providing layer 100, the magnetic torque of the first free layer 200 is deflected, and the magnetic torque of the second free layer 400 is driven to deflect by virtue of coupling. Under different saturation magnetization and different current conditions, the first free layer 200 and the second free layer 400 can be simultaneously switched or multi-resistance state storage can be realized. As an alternative embodiment, the materials of the first free layer 200, the second free layer 400 and the reference layer 600 include CoOne or more of Fe, Ni, B, Pd or Pt. As an alternative embodiment, the material of barrier layer 500 includes MgO, MgAl2O4、Al2O3One or more of them. As a preferred embodiment, one of the materials of the coupling layer 300 and the spin orbit torque providing layer 100 includes one or more of Pt, Pd, Ir, or Au, and the other material includes one or more of Ta, W, or Mo. Among the above materials, Pt, Pd, Ir, and Au are materials whose spin hall angle is a positive value, and Ta, W, and Mo are materials whose spin hall angle is a negative value.
The magnetic tunnel junction laminated structure provided by the embodiment of the invention has two free layers, and the first free layer and the second free layer can have magnetization components in the in-plane direction and the vertical direction through the matching of a coupling action on a magnetization mode, namely, each free layer has the magnetization components in two directions, and the magnetization components of the two free layers are turned over in different current driving modes, so that the magnetic tunnel junction laminated structure can have multiple states, and the magnetic tunnel junction laminated structure can be widely applied. The structure can realize high-efficiency turnover without an external magnetic field and can realize various states, so that the magnetic tunnel junction can be more widely applied. In the above embodiments, the memory cell of the magnetic tunnel junction stack structure is fabricated by plating on the substrate by using conventional methods such as molecular beam epitaxy, atomic layer deposition, or magnetron sputtering, and then performing conventional nano device processing techniques such as photolithography and etching, and the shape of the magnetic tunnel junction is oval, rhombic, rectangular, or polygonal. For each of the above implementations, the antiferromagnetic coupling can be achieved by adjusting the thickness of the coupling layer 300.
As an alternative embodiment, as shown in fig. 4, the coupling layer 300 includes:
a first capping region capping the upper surface of the first free layer 200;
a second capping region which caps a region of the upper surface of the spin orbit torque providing layer 100 except the capping region of the first free layer 200.
The coupling layer 300 covers the first free layer 200 and the spin orbit torque providing layer 100, which is beneficial to improving the switching efficiency of the first free layer 200, and preferably adopts the antiferromagnetic coupling effect of the coupling layer 300 to be superimposed with the spin hall effect thereof.
As an alternative embodiment, in the above embodiment, the spin hall angle of the coupling layer 300 is opposite to the spin hall angle of the free track torque providing layer. In this embodiment, the coupling layer 300 and the spin orbit torque providing layer 100 together promote the magnetic torque flipping of the first free layer 200, which is equivalent to increasing the spin hall angle and improving the flipping efficiency.
An embodiment of the present invention further provides a memory, including: any one of the magnetic tunnel junction stack structures described above; the first free layer is in an in-plane magnetization mode, and the second free layer and the reference layer are in a perpendicular magnetization mode; the saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship: the | Ms1-Ms2|/Ms2 is more than or equal to 20 percent; wherein Ms1 is the saturation magnetization of the first free layer and Ms2 is the saturation magnetization of the second free layer;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents, the directions of the currents being in-plane and perpendicular to the first free layer magnetization direction.
The memory provided in this embodiment does not need an external magnetic field, and the magnetic moment of the first free layer 200 is driven to flip by current, and the second free layer 400 is driven to flip by a coupling effect, so that two resistance states, namely high resistance state and low resistance state, can be realized. As shown in fig. 2, fig. 2 shows the change of the magnetic moment of the first free layer 200 and the second free layer 400 according to the present embodiment. The free relaxation states of the first and second free layers 200 and 400 in the absence of current are initial states. For the in-plane magnetization component, when a current drives the first free layer 200 from positive to negative in-plane magnetization component, the second free layer 400 changes from negative to positive in-plane magnetization component due to the antiferromagnetic effect. Within a reasonable range, the antiferromagnetic action in the plane is established regardless of the magnitudes of both the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400. For the perpendicular magnetization component, the larger the saturation magnetization of the first free layer 200 is, the less the anti-ferromagnetic effect has an effect on it, that is, the smaller the perpendicular magnetization component of the first free layer 200 is, the first free layer 200 starts to precess from the initial state during the flipping process, and when the current is large enough, the precession angle is larger than the included angle between the initial direction of the magnetic moment and the interface of the thin film, that is, the perpendicular magnetization component of the first free layer 200 changes from negative to positive, so that there is a certain probability that the anti-ferromagnetic effect causes the perpendicular magnetization component of the second free layer 400 to change from positive to negative, thereby implementing the flipping. As can be seen from fig. 2, the magnetic moments of the first free layer 200 and the second free layer 400 have only positive and negative values, and the change in the resistance of the magnetic tunnel junction is mainly determined by the angle between the magnetization direction of the magnetic layer (the second free layer 400) directly connected to the barrier layer 500 and the magnetization direction of the reference layer 600, so the resistance of the magnetic tunnel junction corresponds to two resistance states.
When the saturation magnetization of the first free layer 200 and the saturation magnetization of the second free layer 400 satisfy the following relationship: the i Ms1-Ms2 i/Ms 2 is less than 20%, the anti-ferromagnetic effect has a relatively obvious effect on the first free layer 200, so that the perpendicular magnetization component of the first free layer 200 is relatively large, the first free layer 200 starts to precess from the initial state in the flipping process, and the maximum precession angle is smaller than the included angle between the initial direction of the magnetic moment and the film interface, that is, the first free layer 200 cannot flip the perpendicular magnetization direction, that is, the perpendicular magnetization component of the second free layer 400 cannot be flipped by the coupling effect.
An embodiment of the present invention further provides a multi-resistance state memory, including:
any one of the magnetic tunnel junction stack structures described above;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents; the memory can present a plurality of resistance states, and multi-resistance state storage can be carried out, so that the storage density can be improved. The magnetic tunnel junction laminated structure provided by the embodiment of the invention has two free layers, and the first free layer and the second free layer can have magnetization components in the in-plane direction and the vertical direction through the matching of a coupling action on a magnetization mode, namely, each free layer has the magnetization components in two directions, and the magnetization components of the two free layers are turned over in different current driving modes and can have multiple states, so that the magnetic tunnel junction can be more widely applied. The structure can realize high-efficiency turnover without an external magnetic field and can realize various states, so that the magnetic tunnel junction can be more widely applied.
As an alternative embodiment, as shown in fig. 5, the first free layer is in a perpendicular magnetization mode, and the second free layer and the reference layer are in an in-plane magnetization mode. As shown in fig. 6, fig. 6 shows the change of the magnetic moment of the first and second free layers 200 and 400 in the present embodiment. In principle, for the perpendicular magnetization components of the first free layer 200 and the second free layer 400, since the first free layer 200 is perpendicularly magnetized, its own perpendicular magnetization component is very large, and precession starts from an initial state, and the maximum precession angle is smaller than the angle between the initial direction of the magnetic moment and the film interface, the perpendicular magnetization component of the first free layer 200 is not inverted, and the perpendicular magnetization component of the second free layer 400 cannot be inverted by coupling. For the in-plane magnetization components of the first free layer 200 and the second free layer 400, the in-plane magnetization component of the first free layer 200 can be inverted, and meanwhile, the in-plane magnetization component of the second free layer 400 can be also driven to be inverted based on the antiferromagnetic coupling effect of the coupling layer. In summary, the magnetic moment of the first free layer 200 is not substantially changed, and the different magnitudes of the currents cause the different deflection angles of the second free layer 400, so that the balance between the magnetic anisotropy, the spin-orbit torque, and the coupling effect is achieved. The reference layer 600 is in-plane magnetized with a fixed magnetization direction, and the resistance of the magnetic tunnel junction is mainly determined by the angle between the magnetization direction of the second free layer 400 and the magnetization direction of the reference layer 600, where the difference of the angles corresponds to the difference of the in-plane magnetization components of the magnetic moment of the second free layer 400 in fig. 6. As shown in FIG. 7, the resistance change of the magnetic tunnel junction is illustrated, and the magnetic tunnel junction has different resistance values under different writing currents, thereby having a multi-resistance state memory mode.
The embodiment of the invention also provides a neural network computing device, which comprises
Any one of the magnetic tunnel junction stack structures described above; the current value storage unit is used for storing corresponding weight values according to various currents;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents.
In the neural network computing device, each storage unit of each magnetic tunnel junction laminated structure has a plurality of resistance states, so that the resistance states can correspond to the weight values, the weight values do not need to be converted into binary systems for storage in the neural network computing process, one storage unit can finish storage of one weight, when the weight is used, one storage unit is read to obtain the weight, the binary system conversion process is omitted, and therefore the neural network computing efficiency can be improved. In this embodiment, the magnetic tunnel junction can exhibit a plurality of resistance states through a plurality of directions of magnetic moments of the first or second free layers 200 or 400, and thus, storage of a plurality of memory states can be achieved.
An embodiment of the present invention further provides a spin oscillator, including:
any one of the magnetic tunnel junction stack structures described above;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a current to the spin orbit torque providing layer that is greater than three times an inversion current of the first free layer. As shown in fig. 3, fig. 3 shows that, when a sufficiently large current is continuously applied (for example, when the magnetization switching current is more than 3 times larger than that of the first free layer 200), the magnetic moments of the first free layer 200 and the second free layer 400 change, and it can be seen from the figure that the magnetic moments of the first free layer 200 and the second free layer 400 both generate an oscillation phenomenon, in which the magnetic moment of the second free layer 400 has a large oscillation amplitude, a strong signal, and is more easily received. Therefore, the structure can be applied to a microwave oscillator.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A magnetic tunnel junction stack structure, comprising: the spin orbit torque sensor comprises a spin orbit torque providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top; wherein the content of the first and second substances,
one of the first free layer and the second free layer is in an in-plane magnetization mode, and the other is in a perpendicular magnetization mode;
the magnetization pattern of the reference layer is the same as the magnetization pattern of the second free layer.
2. The mtj stack of claim 1, wherein the coupling layer comprises:
a first capping region overlying an upper surface of the first free layer;
a second cover region covering a region of the upper surface of the spin orbit torque providing layer other than the first free layer cover region.
3. The mtj of claim 2, wherein the spin hall angle of the coupling layer is opposite in direction to the spin hall angle of the free track torque providing layer.
4. The mtj stack of claim 2, wherein one of the coupling layer and the mtj (spin-orbit torque) layer comprises one or more of Pt, Pd, Ir, or Au, and the other comprises one or more of Ta, W, or Mo.
5. The mtj stack of claim 1, wherein the materials of the first free layer, the second free layer, and the reference layer comprise one or more of Co, Fe, Ni, B, Pd, or Pt; the barrier layer is made of MgO and MgAl2O4Or Al2O3One or more of them.
6. A memory, comprising:
the magnetic tunnel junction stack of any of claims 1-5; the first free layer is in an in-plane magnetization mode, and the second free layer and the reference layer are in a perpendicular magnetization mode; the saturation magnetization of the first free layer and the saturation magnetization of the second free layer satisfy the following relationship:
the | Ms1-Ms2|/Ms2 is more than or equal to 20 percent; wherein Ms1 is the saturation magnetization of the first free layer and Ms2 is the saturation magnetization of the second free layer;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents, the directions of the currents being in-plane and perpendicular to the first free layer magnetization direction.
7. A multi-resistance state memory, comprising:
the magnetic tunnel junction stack of any of claims 1-5;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents.
8. The reservoir of claim 7, wherein the first free layer is perpendicularly magnetized and the second free layer and the reference layer are in-plane magnetized.
9. A neural network computing device, comprising
A current source electrically connected to the spin orbit torque providing layer, the current source for providing a plurality of write currents;
the magnetic tunnel junction stack of any of claims 1-5; and the current value storage unit is used for storing corresponding weight values according to the various currents.
10. A spin oscillator, comprising:
the magnetic tunnel junction stack of any of claims 1-5;
a current source electrically connected to the spin orbit torque providing layer, the current source for providing a current to the spin orbit torque providing layer, the current being greater than three times an inversion current of the first free layer.
CN202011468695.8A 2020-12-11 2020-12-11 Magnetic tunnel junction laminated structure, memory and neural network computing device Pending CN114628576A (en)

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