CN114609702A - Short-wave near-infrared broadband antireflection film and preparation method thereof - Google Patents

Short-wave near-infrared broadband antireflection film and preparation method thereof Download PDF

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CN114609702A
CN114609702A CN202210274504.7A CN202210274504A CN114609702A CN 114609702 A CN114609702 A CN 114609702A CN 202210274504 A CN202210274504 A CN 202210274504A CN 114609702 A CN114609702 A CN 114609702A
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film layer
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李昊宇
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694Halides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/081Oxides of aluminium, magnesium or beryllium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/083Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment

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  • Engineering & Computer Science (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

The antireflection film is a double-sided deposition antireflection film deposited on an optical glass substrate and consists of five film layers with different thicknesses, wherein Al is sequentially coated outwards from the surface of the optical glass substrate2O3Film layer, ZrO2Thin film layer, Al2O3Film layer, ZrO2Thin film layer, MgF2A thin film layer. The multilayer film prepared by the method overcomes the defect of optical glass in anti-reflection capability, reduces the reflection loss of light energy, and simultaneously improves the anti-reflection broadband, the average transmittance between 0.65 and 1.05 mu m is 99.12 percent, the minimum transmittance is 98.47 percent, and the visible light waveband and the near infrared waveband are spanned; at the same time further solveSolves the problem that the film layer is easy to crystallize when meeting moisture, has good moisture resistance and is not easy to generate fog spots under the film.

Description

Short-wave near-infrared broadband antireflection film and preparation method thereof
Technical Field
The invention relates to the technical field of optical films and evaporation thereof, in particular to a short-wave near-infrared broadband antireflection film and a preparation method thereof.
Background
The short-wave near-infrared broadband antireflection film is a film layer necessary in an instrument for sharing visual information and laser, and mainly has the functions of reducing surface reflection light of an optical component, increasing light transmittance, reducing energy loss, improving detection precision and achieving a clearer observation effect. Antireflection film is also called antireflection film, in a multi-element optical system, the number of lenses is large, and if the antireflection film is not plated on the surface of the lens, light energy loss is caused, the imaging effect is reduced, and the load of elements is increased. And stray light formed by reflection on the surfaces of the lenses reaches the image surface, so that the imaging effect is influenced, and the detection precision of the sensor is influenced. With the increasing engineering requirements, the requirements for antireflection films are increasing. For example, in laser measuring instruments, in order to avoid laser energy from damaging optical elements, it is required that the reflectivity of the surface be reduced; meanwhile, as the requirement of visual inspection still exists, the broadband antireflection film has wide requirement for improving requirements of image balance, imaging quality and the like.
The anti-reflection wave band range of the single anti-reflection film is limited, residual reflection is still high, color balance is damaged, imaging effect is poor, the anti-reflection wave band can be improved through the multi-layer film, geometric thickness among the film layers is arranged in a non-uniform mode, and transmittance and imaging effect can be effectively improved.
ZrO2The material is a film material with higher refractive index, has better mechanical property and resists strong alkali corrosion; however, in the deposition process, the film roughness is improved, the refractive index is reduced and the light dissipation loss is increased because the particles are large and are easy to crystallize when meeting moisture.
Al2O3Has good optical characteristics in visible, near and middle infrared bands, has a transparent area of 0.3-9 μm, has a hard, tough and moisture-proof film, and can effectively solve the problem of ZrO when used as a first coating2The crystallization is easy to happen when meeting moisture. MgF2The material is hard in texture and free of hygroscopicity, and the hardness of a coating layer and the moisture resistance are effectively improved when the material is used as an outer wrapping film layer.
Disclosure of Invention
The invention aims to provide a short-wave near-infrared broadband antireflection film. The antireflection film has excellent transmittance and passband half width in a task band.
The invention also aims to provide a preparation method of the short-wave near-infrared broadband antireflection film.
The purpose of the invention is realized by the following technical scheme:
a short-wave near-infrared broadband antireflection film is characterized in that: the antireflection film is a double-sided deposited antireflection film deposited on an optical glass substrate and consists of five non-uniform thin film layers, and Al is sequentially coated on the surface of the optical glass substrate outwards2O3Film layer, ZrO2Thin film layer, Al2O3Film layer, ZrO2Thin film layer, MgF2A thin film layer.
The invention is prepared by using Al2O3As medium refractive index material, ZrO2As a high refractive index material, MgF2As a low refractive index material, Al is formed2O3-ZrO2-Al2O3-ZrO2-MgF2Multilayer film of five layers of film layers having a coefficient of thermal expansion of 4.9X 10-6Al of/K2O3The vapor deposition material is a bottom material, the whole stress is adjusted, and the vapor deposition material is used as the bottom material by utilizing the characteristic of good moisture resistance, so that the condition of fog spots after vapor deposition is effectively prevented.
Further, the Al2O3Film layer, ZrO2Thin film layer and MgF2The film layer is prepared by an electron beam evaporation method, and the process is simple.
The preparation method of the short-wave near-infrared broadband antireflection film is characterized by comprising the following steps of: cleaning the glass substrate, preheating, and simultaneously carrying out Al2O3、ZrO2And MgF2Pre-melting the film material, and preparing Al on the surface of the substrate in sequence by adopting an electron beam evaporation method2O3Film layer, ZrO2Thin film layer, Al2O3Film layer, ZrO2Thin film layer, MgF2And the thickness of each film layer is designed in a non-uniform mode and is 125nm, 81nm, 23nm, 79nm and 147nm in sequence.
Further, the five-layer film deposition is carried out when the glass substrate temperature reaches 260 ℃ and the vacuum degree reaches 4 multiplied by 10-3When Pa is needed, the electron gun is opened, evaporation and deposition are carried out in sequence, and the deposition rate is Al2O3Film layer: 0.3 to 0.4nm/s, ZrO2Film layer: 0.28-0.30nm/s MgF2Film layer: 0.36 to 0.40 nm/s.
The selection range of the bottom layer low refractive index material combined with the glass substrate is wide, and the film combination obtained under different preparation process conditions has great difference. Al (Al)2O3Using the film layer as a primer materialThe feature of good compactness, effectively isolating ZrO2The contact between the film layer and the glass substrate prevents impurities and ZrO existing in glass smelting2The reaction and crystallization form the fog spots under the film, and the light stability is improved.
Most specifically, the preparation method of the short-wave near-infrared broadband is characterized by comprising the following steps of:
s1 pretreatment for vapor deposition
Selecting optical glass with refractive index of 1.49-1.58 as matrix, sequentially performing ultrasonic cleaning with ethanol, diethyl ether mixture and deionized water, drying, placing into vacuum chamber chuck, baking and preheating, maintaining the temperature when the temperature of the glass matrix reaches 260 deg.C, and vacuumizing to 4 × 10-3Pa, mixing Al2O3、ZrO2、MgF2Pre-melting the film material;
s2 preparation of Al by electron beam evaporation method2O3Thin film layer and ZrO2Film layer
The environment in the vacuum chamber is kept to be 4 multiplied by 10-3Pa degree of vacuum, and glass matrix temperature of 260 deg.C, evaporating Al2O3The material is deposited at a deposition rate of 0.3-0.4nm/s and then ZrO is evaporated2Depositing the material at a deposition rate of 0.28-0.30nm/s, keeping the environmental parameters in the vacuum chamber unchanged, repeating the above process, and evaporating four film layers from the surface of the glass substrate to the outside in sequence, wherein the thicknesses of the four film layers are 125nm, 81nm, 23nm and 79nm respectively;
s3 preparation of MgF by electron beam evaporation method2Film layer
MgF is carried out under the same parameter environment as in S22And (3) depositing the thin film layer, wherein the deposition rate is 0.36-0.40nm/s, and the thickness of the film layer is 147 nm.
In the process of preparing the multilayer composite antireflection film, the film edge is easy to curl and shrink if the deposition rate of the film material is high, and the deposition stability in the deposition process is a main reason for causing the uneven surface of the film so as to peel. According to the invention, the deposition of each layer of film material is more uniform through the low deposition rate, so that the adhesion between the film layers is good and the film layers are not easy to fall off.
Further prepared in the aboveDuring the process, if Al is added2O3The film layer is replaced by other materials with low refractive index, and ZrO is easily caused2The film layer reacts with the surface of the glass substrate to generate crystallization, and the fog spots under the film are formed. Using Al2O3The compactness is good after deposition, thereby effectively isolating ZrO2The thin film layer reacts with impurities in glass smelting, so that the quality of the thin film is improved.
The invention has the following technical effects:
the multilayer composite anti-reflection film prepared by the method overcomes the defect of optical glass in anti-reflection capability, reduces the reflection loss of light energy, and simultaneously improves the anti-reflection broadband, wherein the average transmittance is 99.12% between 0.65 and 1.05 mu m, and the minimum transmittance is 98.47%; solve the problem of ZrO2The material is easy to crystallize, and the film is not easy to generate fog spots under the film; meanwhile, the stress of the film is reduced, and the residual stress is as low as 0.53 GPa; the film has excellent mechanical strength and damage-resistant quality.
Drawings
FIG. 1: the transmittance of the antireflection film prepared by the invention is compared with the transmittance curve of the glass substrate before film coating.
Detailed Description
The present invention is described in detail below by way of examples, it should be noted that the following examples are only for illustrating the present invention and should not be construed as limiting the scope of the present invention, and those skilled in the art can make some insubstantial modifications and adaptations to the present invention based on the above-described disclosure.
Example 1
A preparation method of a short-wave near-infrared broadband antireflection film comprises the following steps:
s1 pretreatment for vapor deposition
Selecting K9 optical glass with refractive index of 1.52 as matrix, sequentially performing ultrasonic cleaning with ethanol, diethyl ether mixture and deionized water, drying, placing into a vacuum chamber chuck, baking and preheating, maintaining the temperature of the glass matrix at 260 deg.C for 10 min, and vacuumizing to 4 × 10-3Pa, mixing Al2O3、ZrO2、MgF2Pre-melting the film material;
s2 preparation of Al by electron beam evaporation method2O3Film layer and ZrO2Film layer
The environment in the vacuum chamber is kept to be 4 multiplied by 10-3Pa degree of vacuum, and glass matrix temperature of 260 deg.C, evaporating Al2O3Material, deposition rate 0.3nm/s, then re-evaporating ZrO2The deposition rate of the material is 0.28nm/s, then the environmental parameters in the vacuum chamber are kept unchanged, the process is repeated once, and the four film layers are evaporated and sequentially outwards from the surface of the glass substrate, and the thicknesses of the four film layers are 125nm, 81nm, 23nm and 79nm respectively;
s3 preparation of MgF by electron beam evaporation method2Film layer
MgF is carried out under the same parameter environment as in S22And (3) depositing a thin film layer, wherein the deposition rate is 0.38nm/s, and the thickness of the thin film layer is 147 nm.
No sub-membranous haze was observed after the film was left in a humid environment for one week. Al prepared by the invention2O3-ZrO2-
Al2O3-ZrO2 -MgF2The multilayer film has excellent transmittance and a wide band width, and has an average transmittance of 99.11% and a minimum transmittance of 98.73% in a range of 0.65 to 1.05 μm.
And (3) carrying out mechanical property inspection on the prepared film layer, wrapping 2 layers of dry absorbent gauze outside the rubber friction head, and rubbing the film layer along the same track under the pressure of 4.9N for 25 times without damages such as scratches. The width is 2cm, and the peel strength is more than or equal to 2.94N/cm2The adhesive tape paper is firmly adhered to the surface of the film layer, and after the adhesive tape paper is quickly pulled up from the edge of the part to the vertical direction of the surface, the film layer does not fall off or damage, and the prepared film layer is proved to have good mechanical strength.
The antireflection film prepared by the invention has excellent transmittance and pass band width, the average transmittance between 0.65 and 1.05 mu m is 99.12 percent, the minimum transmittance is 98.47 percent, the effective bandwidth is 400nm, and the average transmittance between 0.65 and 1.05 mu m is only 92.17 percent before the film prepared by the invention is evaporated on a glass substrate.

Claims (6)

1. A short-wave near-infrared broadband antireflection film is characterized in that: the antireflection film is a double-sided deposited antireflection film deposited on an optical glass substrate and consists of five layers of non-uniform film layers with unequal geometric thicknesses, and Al layers are sequentially arranged from the surface of the optical glass substrate to the outside2O3Film layer, ZrO2Thin film layer, Al2O3Film layer, ZrO2Thin film layer, MgF2A thin film layer.
2. The short-wave near-infrared broadband antireflection film of claim 1, wherein: al (Al)2O3Film layer, ZrO2Thin film layer, MgF2The film layer is prepared by evaporation by an electron beam evaporation method.
3. A preparation method of a short-wave near-infrared broadband antireflection film is characterized by comprising the following steps: cleaning a glass substrate, baking the glass substrate, and adding Al2O3、ZrO2And MgF2Heating and pre-melting the film material, and preparing Al on the surface of the substrate in sequence by adopting an electron beam evaporation method2O3Film layer, ZrO2Thin film layer, Al2O3Film layer, ZrO2Thin film layer, MgF2A thin film layer.
4. The method for preparing a short-wave near-infrared broadband antireflection film according to claim 3, wherein the method comprises the following steps: the film layers are deposited in a differential mode, and the geometric thickness of the film layers from the surface of the optical glass substrate to the outside is Al2O3Film layer: 125nm, ZrO2Film layer: 81nm, Al2O3Thin film layer: 23nm, ZrO 22Film layer: 79nm MgF2Film layer: 147 nm.
5. The preparation method of the short-wave near-infrared broadband antireflection film according to claims 3 and 4, characterized by comprising the following steps: the preparation of Al2O3Film layer, ZrO2Thin film layer, MgF2The thin film layers are respectively made of Al2O3、ZrO2、MgF2For film material, the vacuum degree of the vacuum chamber is adjusted to 4.0X 10-3Turning on a baking lamp when Pa, heating the glass substrate to 260 ℃, keeping the temperature for 5-10 minutes, and turning on an e-type electron gun to carry out Al2O3Depositing a thin film layer at a deposition rate of 0.3-0.4nm/s, and then sequentially evaporating ZrO2Thin film layer, MgF2The deposition rates of the thin film layer are 0.28-0.30nm/s and 0.36-0.40nm/s in sequence.
6. A preparation method of a short-wave near-infrared broadband antireflection film is characterized by comprising the following steps:
s1 pretreatment for vapor deposition
Selecting optical glass with refractive index of 1.49-1.58 as matrix, sequentially performing ultrasonic cleaning with ethanol, diethyl ether mixture and deionized water, drying, placing into vacuum chamber chuck, baking and preheating, maintaining the temperature when the temperature of the glass matrix reaches 260 deg.C, and vacuumizing to 4 × 10-3Pa, mixing Al2O3、ZrO2、MgF2Pre-melting the film material;
s2 preparation of Al by electron beam evaporation method2O3Film layer and ZrO2Film layer
The environment in the vacuum chamber is kept to be 4 multiplied by 10-3Pa degree of vacuum, and glass matrix temperature of 260 deg.C, evaporating Al2O3The material is deposited at a deposition rate of 0.3 to 0.4nm/s and then ZrO is evaporated2Depositing the material at a deposition rate of 0.28-0.30nm/s, keeping the environmental parameters in the vacuum chamber unchanged, repeating the above process, and evaporating four film layers from the surface of the glass substrate to the outside in sequence, wherein the thicknesses of the four film layers are 125nm, 81nm, 23nm and 79nm respectively;
s3 preparation of MgF by electron beam evaporation method2Film layer
MgF is carried out under the same parameter environment as in S22The deposition rate of the film layer is 0.36-0.40nm/s, and the thickness of the film layer is 147 nm.
CN202210274504.7A 2022-03-21 2022-03-21 Short-wave near-infrared broadband antireflection film and preparation method thereof Pending CN114609702A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115094388A (en) * 2022-07-08 2022-09-23 广东信大科技有限公司 Heating pipe coating method and rose gold pipe and gold pipe prepared by same
CN115343787A (en) * 2022-06-27 2022-11-15 四川虹基光玻新材料科技有限公司 AR film and preparation method and application thereof
CN115343787B (en) * 2022-06-27 2024-05-28 四川虹基光玻新材料科技有限公司 AR film and preparation method and application thereof

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US4726654A (en) * 1985-11-25 1988-02-23 Minolta Camera Kabushiki Kaisha Multi-layered anti-reflection coating
DE4100831A1 (en) * 1990-02-02 1991-08-08 Jenoptik Jena Gmbh Wideband anti-reflection coating - with five layers of high, medium and low refractive index materials
US20090097129A1 (en) * 2007-10-15 2009-04-16 Seiko Epson Corporation Optical Article and Process for Producing Optical Article
CN102392305A (en) * 2011-11-12 2012-03-28 华南师范大学 Preparation method of yttrium aluminum garnet crystal film doped with metal ions
JP2015004919A (en) * 2013-06-24 2015-01-08 キヤノン株式会社 Anti-reflection film and optical element having the same
CN104309196A (en) * 2014-10-18 2015-01-28 中山市创科科研技术服务有限公司 Visible light and near infrared light two-waveband antireflection film glass and manufacturing method thereof
CN113703078A (en) * 2021-08-31 2021-11-26 重庆文理学院 Broadband antireflection film for visible light region and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4726654A (en) * 1985-11-25 1988-02-23 Minolta Camera Kabushiki Kaisha Multi-layered anti-reflection coating
DE4100831A1 (en) * 1990-02-02 1991-08-08 Jenoptik Jena Gmbh Wideband anti-reflection coating - with five layers of high, medium and low refractive index materials
US20090097129A1 (en) * 2007-10-15 2009-04-16 Seiko Epson Corporation Optical Article and Process for Producing Optical Article
CN102392305A (en) * 2011-11-12 2012-03-28 华南师范大学 Preparation method of yttrium aluminum garnet crystal film doped with metal ions
JP2015004919A (en) * 2013-06-24 2015-01-08 キヤノン株式会社 Anti-reflection film and optical element having the same
CN104309196A (en) * 2014-10-18 2015-01-28 中山市创科科研技术服务有限公司 Visible light and near infrared light two-waveband antireflection film glass and manufacturing method thereof
CN113703078A (en) * 2021-08-31 2021-11-26 重庆文理学院 Broadband antireflection film for visible light region and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115343787A (en) * 2022-06-27 2022-11-15 四川虹基光玻新材料科技有限公司 AR film and preparation method and application thereof
CN115343787B (en) * 2022-06-27 2024-05-28 四川虹基光玻新材料科技有限公司 AR film and preparation method and application thereof
CN115094388A (en) * 2022-07-08 2022-09-23 广东信大科技有限公司 Heating pipe coating method and rose gold pipe and gold pipe prepared by same
CN115094388B (en) * 2022-07-08 2024-02-09 广东信大科技有限公司 Heating pipe coating method and rose gold pipe prepared by heating pipe coating method

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