CN114597759A - Semiconductor pump alkali metal mode-locked laser and method for generating alkali metal mode-locked pulse laser - Google Patents
Semiconductor pump alkali metal mode-locked laser and method for generating alkali metal mode-locked pulse laser Download PDFInfo
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
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- H01S3/1115—Passive mode locking using intracavity saturable absorbers
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Abstract
The invention provides a semiconductor pumping alkali metal mode-locked laser and a method for generating an alkali metal mode-locked pulse laser. The laser comprises a semiconductor pump source for outputting a pump beam; the pump light shaping system is used for receiving the pump light and converging the pump light to the middle part of the alkali metal vapor pool; an alkali metal vapor pool for gaining the shaped pump light to generate gain laser light; and the mode-locking resonance structure is used for outputting alkali metal mode-locking laser after the gain laser is subjected to oscillation mode-locking. The invention has the characteristics of picosecond pulse width, high peak power, high efficiency, good light beam quality, good amplifiability, reliable use and the like. Has important application value and development prospect in the aspects of science frontier, space debris detection and elimination, industrial precision processing, laser communication, medical cosmetology and the like.
Description
Technical Field
The invention relates to the technical field of ultrashort pulse, in particular to a semiconductor pumping alkali metal mode-locked laser and a method for generating alkali metal mode-locked pulse laser.
Background
With the increasing development of human aerospace activities, the number of space debris is increasing, and the space environment is seriously polluted. Especially near-earth orbit, wherein the space debris at centimeter level has the biggest threat to the spacecraft because of the difficulty of tracking and cataloging and the relatively large kinetic energy. Therefore, active clearing of space debris is a necessary option. Pulsed lasers have a greater advantage over continuous lasers for detection and elimination of spatial debris. Particularly, the high repetition frequency laser with the pulse width in picosecond magnitude and the wavelength in an atmospheric window can greatly improve the peak power of the laser and is more beneficial to high-precision detection and space debris removal. In addition, the high peak power picosecond laser has important application value and development prospect in the aspects of science frontier, industrial precision machining, laser communication, medical cosmetology and the like.
The current devices for obtaining high peak power ultrashort pulse laser generally include titanium sapphire laser, all-solid-state laser, fiber laser, etc. A mode-locked laser based on optical fiber or solid medium is generally used as a seed source, and the power is improved through regenerative amplification or traveling wave amplification. In the traveling wave amplification process, the titanium sapphire laser is difficult to support high-power laser output due to low heat conductivity; the fiber laser is limited by nonlinear effects and damages in the fiber, and is difficult to continuously improve on peak power; all-solid-state lasers are currently the dominant way to obtain high peak power ultrashort pulses. However, the thermal effect in the solid-state amplification technology is a key factor influencing further amplification and beam quality, and most of large-energy lasers work at extremely low repetition frequency along with the improvement of energy and peak power, and many of the large-energy lasers are large scientific devices and are expensive in manufacturing cost. For example, a laser with a single pulse energy of 16.7J and a peak power of 170TW, but with a repetition rate of only 0.02 Hz.
Most semiconductor pumped alkali metal vapor lasers (DPALs) are currently operated in continuous mode (CW), however, for some specific applications, such as space optics, medical diagnostics, scientific research, ultra-fine processing, and nonlinear optics, ultra-short pulses with high peak power and high single-pulse energy are required, and therefore, the research on ultra-short pulse DPALs will have great application value and development prospects.
The methods for obtaining the ultrashort pulse mainly comprise Q-switching and mode-locking. At present, few research institutions for researching DPAL Q modulation exist, and only a few reports exist. For example, the output pulse widths 238ns and 14ns are reported in the literature. Although the pulse energy and peak power are much higher (-25 times) than when operated continuously, they are limited by the upper level lifetime of alkali metal (26-30 ns), indicating that alkali metal vapor lasers are not suitable for pulsed storage lasers such as Nd: YAG (upper level lifetime-230 μ s) and are more suitable for continuous operation.
And the ultrashort pulse is obtained by mode locking, the ultrashort pulse can work in a continuous mode, the obtained pulse width is narrower (about hundred picoseconds), and compared with the pulse width obtained by cavity emptying in documents, the pulse width is reduced by two orders of magnitude, so that the peak power is improved by two orders of magnitude and reaches more than several kW. If laser with higher peak power is required to be obtained, mode-locked pulse laser can be used as seed light, and a power amplification scheme is adopted to further improve pulse energy and peak power. Unfortunately, semiconductor pumped alkali metal mode-locked lasers have not been reported.
Disclosure of Invention
In view of the technical problem that the proposed high peak power ultrashort pulse alkali metal laser is difficult to implement, a semiconductor pumped alkali metal mode-locked laser and a method for generating an alkali metal mode-locked pulse laser are provided. The invention has universality, can provide theoretical support for realizing mode locking of other alkali metals, and realizes the alkali metal picosecond pulse laser with good beam quality, high efficiency and strong amplifiability.
The technical means adopted by the invention are as follows:
in one aspect, the present invention provides a semiconductor pumped alkali metal mode-locked laser, including:
a semiconductor pump source for outputting a pump beam;
the pump light shaping system is used for receiving the pump light and converging the pump light to the middle part of the alkali metal vapor pool;
an alkali metal vapor pool for gaining the shaped pump light to generate gain laser light;
the mode-locking resonance structure is used for outputting alkali metal mode-locking laser after the gain laser is subjected to oscillation mode-locking;
the pumping light emitted by the semiconductor pumping source is focused into the alkali metal vapor pool through the pumping light shaping system, and enters the mode-locked resonant structure to oscillate to form the alkali metal mode-locked laser after being gained by taking the alkali metal vapor as a gain medium.
Based on the above technical solution, preferably, the mode-locked resonance structure includes:
the dichroic mirror is arranged on an output light path of the pumping light shaping system;
an output mirror disposed on the light reflecting path of the dichroic mirror;
the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool;
the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and
a saturable absorber disposed on the reflected light path of the second high-reflection mirror;
the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure.
Based on the above technical solution, preferably, the saturable absorber is one of a semiconductor saturable absorber mirror, graphene, black phosphorus, and molybdenum disulfide.
Based on the above technical solution, preferably, the output mirror is an output coupling mirror;
the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelengths and a reflectance of 99% or more for laser light wavelengths;
the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and reflectivity of more than 99% to laser wavelength.
Based on the above technical solution, preferably, the line width of the pump light is less than or equal to 0.1 nm.
Based on the technical scheme, preferably, the alkali metal vapor pool is placed in a temperature control furnace, rubidium or potassium vapor is filled in the temperature control furnace to serve as a gain medium, and a certain amount of buffer gas is mixed, wherein the buffer gas is one of methane, ethane and helium or a mixed gas of helium and alkane.
On the other hand, the invention also provides a method for generating the alkali metal mode-locked pulse laser, which is realized based on the device and comprises the following steps:
outputting pump light through a semiconductor pump source, wherein the line width of the pump light is less than or equal to 0.1 nm;
receiving the pump light through a pump light shaping system and converging the pump light to the middle part of the alkali metal vapor pool;
the shaped pump laser is gained through an alkali metal vapor pool so as to generate gain laser;
and oscillating and mode-locking the gain laser through the mode-locking resonance structure and then outputting alkali metal mode-locking laser.
Based on the above technical solution, preferably, the mode-locked resonance structure includes:
the dichroic mirror is arranged on an output light path of the pumping light shaping system;
an output mirror disposed on the light reflecting path of the dichroic mirror;
the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool;
the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and
a saturable absorber disposed on the reflected light path of the second high-reflection mirror;
the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure.
Based on the above technical solution, preferably, the saturable absorber is one of a semiconductor saturable absorber mirror, graphene, black phosphorus, and molybdenum disulfide.
Based on the above technical solution, preferably, the output mirror is an output coupling mirror;
the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelengths and a reflectance of 99% or more for laser light wavelengths;
the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and with reflectivity of more than 99% for laser wavelength.
Compared with the prior art, the invention has the following advantages:
1. the laser provided by the invention has universality, can provide theoretical support for realizing mode locking of other alkali metals, and realizes an alkali metal picosecond pulse laser with good beam quality, high efficiency and strong amplifiability.
2. The invention fills the research blank of the ultrashort pulse alkali metal laser, adopts a diode laser as a pumping source, adopts alkali metal with larger gain coefficient as a gain medium, and adopts a saturable absorber as a passive mode locking device, so as to obtain the ultrashort pulse alkali metal laser with higher peak power, and the ultrashort pulse alkali metal laser has the characteristics of picosecond pulse width, high peak power, high efficiency, good beam quality, good amplifiability, reliable use and the like. Has important application value and development prospect in the aspects of science frontier, space debris detection and elimination, industrial precision processing, laser communication, medical cosmetology and the like.
Based on the reasons, the invention can be widely popularized in the fields of space debris detection and elimination, industrial precision machining, laser communication, medical cosmetology and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 shows semiconductor-pumped alkali-metal mode-locked lasers provided in embodiments 1 and 2 of the present invention.
Fig. 2 is a semiconductor pumped alkali metal mode-locked laser provided in embodiment 3 of the present invention.
In the figure: 1. a semiconductor pump source; 2. a pump light shaping system; 3. rubidium vapor pool/potassium vapor pool; 4. an output mirror; 5. a dichroic mirror; 6. a first high-reflection mirror; 7. a second high-reflection mirror; 8. a saturable absorber.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the absence of any contrary indication, these directional terms are not intended to indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … … surface," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The invention provides a semiconductor pumping alkali metal mode-locked laser, comprising: the device comprises a semiconductor pumping source, a pumping light shaping system, an alkali metal vapor pool, an output mirror, a dichroic mirror, a first high-reflection mirror, a second high-reflection mirror and a saturable absorber. The output mirror, the dichroic mirror, the first high-reflection mirror, the second high-reflection mirror and the saturable absorber form a mode-locking resonance structure. Laser beams output by the semiconductor pumping source enter the alkali metal vapor pool from the dichroic mirror after passing through the pumping light shaping system, pulse laser oscillates in the mode locking resonant cavity to realize output of alkali metal mode locking laser with pulse width of picosecond magnitude, and finally the mode locking pulse laser is output from the output mirror.
Based on the above technical solutions, preferably, the structures of the semiconductor pump source and the pump light shaping system can refer to the solutions described in the document "brewster angle structure 16.8W semiconductor pump rubidium vapor laser" (chinese laser, 43(3), 2016), and are not described herein again. Furthermore, the pump light shaping system is a lens group, and the number of lenses in the lens group is more than or equal to 1. And pumping light emitted by the semiconductor pumping source is focused into the alkali metal vapor pool through the lens group. The semiconductor pump source is used as a pump source of a semiconductor pump alkali metal mode-locked laser, and the line width is less than or equal to 0.1 nm.
Based on the technical scheme, the alkali metal steam pool is arranged in the temperature control furnace, and rubidium or potassium steam is filled in the temperature control furnace to be used as a gain medium and a certain amount of buffer gas. Preferably, the buffer gas is methane (CH)4) Ethane (C)2H6) Helium (He)Or a mixture of helium and an alkane.
Based on the above technical solution, preferably, the mode-locked resonance structure includes: the dichroic mirror is arranged on an output light path of the pumping light shaping system; an output mirror disposed on the light reflecting path of the dichroic mirror; the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool; the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and a saturable absorber disposed on the second highly reflective mirror reflection optical path; the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure. Further preferably, the output mirror is an output coupling mirror; the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelength and a reflectance of 99% or more for laser wavelength; the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and reflectivity of more than 99% to laser wavelength.
Based on the above technical solution, preferably, the saturable absorber is a passive mode locking device for realizing ultrashort pulse output, and the saturable absorber is one of a semiconductor saturable absorber mirror (SESAM), graphene, black phosphorus, molybdenum disulfide, and the like.
The limit pulse width for realizing mode locking of the existing laser is inversely proportional to the line width, delta taumin＝1/ΔνgIt can be seen that the wider the gain linewidth, the more likely a narrow mode-locked pulse width is to be obtained. The Doppler line width of the alkali metal atoms is extremely narrow (1-2 x 10)-3nm), which would be disadvantageous for obtaining ultrashort pulses. The gain linewidth of the gas laser is small, for example, the gain linewidth of He-Ne laser is about 2 × 10-3nm, it achieves a wider pulse width. In the invention, the absorption spectrum line of alkali metal atoms is widened by filling buffer gas in a collision way, and helium gas (the widening coefficient, gamma) of 1-10 atm can be filled inRb-He～0.03nm/atm，γK-He0.02 nm/atm). For example, the broadened linewidth is 0.03nm and the reciprocal of the linewidth is 70ps, so that the mode-locked pulse of tens of ps or hundreds of ps can be expected to be obtained.
The scheme and the effect of the invention are further explained by specific application examples.
Example 1
As shown in fig. 1, the semiconductor pumped alkali metal mode-locked laser provided by this embodiment includes a semiconductor pump source 1, a pump light shaping system 2, a rubidium vapor pool 3, an output mirror 4, a dichroic mirror 5, a first high-reflection mirror 6, a second high-reflection mirror 7, and a saturable absorber 8; the output mirror 4, the dichroic mirror 5, the first high-reflection mirror 6, the second high-reflection mirror 7 and the saturable absorber 8 form a resonant cavity structure of the mode-locked laser. Laser beams output by a semiconductor pumping source 1 pass through a pumping light shaping system 2, then enter a rubidium vapor pool 3 from a dichroic mirror 5, pulse laser oscillates in a mode locking resonant cavity, rubidium vapor mode locking laser output is achieved, the wavelength is 795nm, the pulse width is dozens of picoseconds or hundreds of picoseconds, and finally the mode locking pulse laser is output from an output mirror 4.
The semiconductor pump source 1 is used as a pump source of a semiconductor pump rubidium vapor mode-locked laser, the central wavelength of pump light is 780.2nm, and the line width is 0.1 nm. The pumping light shaping system 2 is a lens group; the number of focusing lenses in the lens group is more than or equal to 1; the pumping light emitted by the semiconductor pumping source 1 is focused into the rubidium vapor pool 3 through a lens group. Rubidium steam is filled in the rubidium steam pool 3 to be used as a gain medium, and helium and methane are filled to be used as buffer gases; the gain pool is arranged in the temperature control furnace; the laser wavelength was 795 nm.
In addition, the mode-locked resonant structure of the mode-locked laser includes a Z-folded cavity. Wherein the output mirror 4 is an output coupling mirror; the dichroic mirror 5 is a plane mirror, and has a transmittance of 99% or more at 780.2nm wavelength and a reflectance of 99% or more at 795nm wavelength; the first high reflecting mirror 6 and the second high reflecting mirror 7 are concave mirrors with certain curvature and reflectivity of more than 99% for 795nm wavelength. The saturable absorber 8 is a semiconductor saturable absorber mirror with a center wavelength of 795 nm.
Example 2
Based on the above embodiment 1, a further preferred embodiment 2 provides a semiconductor-pumped alkali-metal mode-locked laser, which is different in structure only in the type of the saturable absorber 8, and the description of the repeated parts is omitted. In this embodiment, the saturable absorber 8 is a black phosphorus saturable absorber.
Laser beams output by a semiconductor pumping source 1 pass through a pumping light shaping system 2, then enter a rubidium vapor pool 3 from a dichroic mirror 5, pulse laser oscillates in a mode locking resonant cavity, rubidium vapor mode locking laser output is achieved, the wavelength is 795nm, the pulse width is dozens of picoseconds or hundreds of picoseconds, and finally the mode locking pulse laser is output from an output mirror 4.
Example 3
A third embodiment of the present invention is shown in fig. 2, and the semiconductor pump alkali metal mode-locked laser only has a semiconductor pump source 1, a potassium vapor pool 3, a dichroic mirror 5, and a laser wavelength that are different from those in example 1, and the rest of the structure is the same as that in example 1, and repeated descriptions are omitted.
In this example, the alkali metal vapor is potassium (K), and the laser wavelength is 770 nm. The semiconductor pump source 1 is used as a pump source of an alkali metal mode-locked laser, the central wavelength of pump light is 766.7nm, and the line width is 0.1 nm. The saturable absorber 8 is a semiconductor saturable absorber mirror with a central wavelength of 770 nm.
The resonant cavity of the mode-locked laser is of a Z-shaped folded cavity structure; the dichroic mirror 5 is a polarizing prism, and has a transmittance of 99% or more at a wavelength of 766.7nm and a reflectance of 99% or more at a wavelength of 770 nm; the first high-reflection mirror 6 and the second high-reflection mirror 7 are concave mirrors with certain curvature and reflectivity of more than 99% to 770nm wavelength.
Laser beams output by the semiconductor pumping source 1 pass through the pumping light shaping system 2, then enter the potassium vapor pool 3 from the dichroic mirror 5, and pulse laser oscillates in the mode-locked resonant cavity, so that the output of potassium vapor mode-locked laser is realized, and the wavelength is 770 nm.
Because the potassium vapor pool can be widened only by adding helium, higher high pressure can be added, the line width is wider than rubidium vapor and cesium vapor, the obtained pulse width is narrower, the pulse width can be expected to be ten picoseconds or dozens of picoseconds, and finally the mode-locked pulse laser is output from the output mirror 4.
On the other hand, the invention also provides a method for generating the alkali metal mode-locked pulse laser, which is realized based on the device and comprises the following steps:
outputting pump light through a semiconductor pump source, wherein the line width of the pump light is less than or equal to 0.1 nm;
receiving the pump light through a pump light shaping system and converging the pump light to the middle part of the alkali metal vapor pool;
the shaped pump laser is gained through an alkali metal vapor pool so as to generate gain laser;
and oscillating and mode-locking the gain laser through the mode-locking resonance structure and then outputting alkali metal mode-locking laser.
Based on the above technical solution, preferably, the mode-locked resonance structure includes:
the dichroic mirror is arranged on an output light path of the pumping light shaping system;
an output mirror disposed on the light reflecting path of the dichroic mirror;
the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool;
the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and
a saturable absorber disposed on the reflected light path of the second high-reflection mirror;
the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure.
Based on the above technical solution, preferably, the saturable absorber is one of a semiconductor saturable absorber mirror, graphene, black phosphorus, and molybdenum disulfide.
Based on the above technical solution, preferably, the output mirror is an output coupling mirror;
the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelengths and a reflectance of 99% or more for laser light wavelengths;
the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and reflectivity of more than 99% to laser wavelength.
For the embodiment of the method for generating an alkali metal mode-locked pulsed laser according to the present invention, the description is simple because it corresponds to the above embodiment of the apparatus, and for the similarity, please refer to the description in the above embodiment, and the detailed description is omitted.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A semiconductor-pumped alkali-metal mode-locked laser, comprising:
a semiconductor pump source for outputting a pump beam;
the pump light shaping system is used for receiving the pump light and converging the pump light to the middle part of the alkali metal vapor pool;
an alkali metal vapor pool for gaining the shaped pump light to generate gain laser light;
the mode-locking resonance structure is used for outputting alkali metal mode-locking laser after the gain laser is subjected to oscillation mode-locking;
the pump light emitted by the semiconductor pump source is focused into the alkali metal vapor pool through the pump light shaping system, and enters the mode-locked resonant structure to oscillate and generate the alkali metal mode-locked laser after being gained by taking the alkali metal vapor as a gain medium.
2. The semiconductor-pumped alkali-metal mode-locked laser of claim 1, wherein the mode-locked resonant structure comprises:
the dichroic mirror is arranged on an output light path of the pumping light shaping system;
an output mirror disposed on the light reflecting path of the dichroic mirror;
the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool;
the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and
a saturable absorber disposed on the reflected light path of the second high-reflection mirror;
the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure.
3. The semiconductor-pumped alkali-metal mode-locked laser of claim 2, wherein the saturable absorber is one of a semiconductor saturable absorber mirror, graphene, black phosphorus, and molybdenum disulfide.
4. The semiconductor-pumped alkali-metal mode-locked laser of claim 2, wherein the output mirror is an output coupling mirror;
the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelengths and a reflectance of 99% or more for laser light wavelengths;
the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and reflectivity of more than 99% to laser wavelength.
5. The semiconductor-pumped alkali-metal mode-locked laser of claim 1, wherein the pump light linewidth is 0.1nm or less.
6. The semiconductor pumped alkali metal mode-locked laser of claim 1, wherein the alkali metal vapor pool is placed in a temperature controlled furnace, and rubidium or potassium vapor is filled in the temperature controlled furnace as a gain medium and mixed with a certain amount of buffer gas, wherein the buffer gas is one of methane, ethane and helium or a mixed gas of helium and alkane.
7. A method for generating an alkali-metal mode-locked pulsed laser, which is achieved by the apparatus according to claim 1, comprising:
outputting pump light through a semiconductor pump source, wherein the linewidth of the pump light is less than or equal to 0.1 nm;
receiving the pump light through a pump light shaping system and converging the pump light to the middle part of the alkali metal vapor pool;
the shaped pump laser is gained through an alkali metal vapor pool so as to generate gain laser;
and oscillating and mode-locking the gain laser through the mode-locking resonance structure and then outputting alkali metal mode-locking laser.
8. The method of generating an alkali metal mode-locked pulsed laser of claim 7, wherein the mode-locked resonant structure comprises:
the dichroic mirror is arranged on an output light path of the pumping light shaping system;
the output mirror is arranged on the light reflecting path of the dichroic mirror;
the first high reflecting mirror is arranged on an output light path of the alkali metal vapor pool;
the second high-reflection mirror is arranged on the reflection light path of the first high-reflection mirror; and
a saturable absorber disposed on the reflected light path of the second high-reflection mirror;
the dichroic mirror, the output mirror, the first high reflection mirror, the second high reflection mirror and the saturable absorber form a Z-shaped folding cavity structure.
9. The method of generating an alkali mode-locked pulsed laser according to claim 8, wherein the saturable absorber is one of a semiconductor saturable absorber mirror, graphene, black phosphorus, and molybdenum disulfide.
10. The method of generating an alkali metal mode-locked pulsed laser according to claim 8, wherein the output mirror is an output coupling mirror;
the dichroic mirror is a plane mirror or a polarizing prism, and has a transmittance of 99% or more for pump light wavelength and a reflectance of 99% or more for laser light wavelength;
the first high-reflection mirror and the second high-reflection mirror are concave mirrors with certain curvatures and reflectivity of more than 99% to laser wavelength.
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