CN114584102A - Radio frequency resonator and filter - Google Patents
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- CN114584102A CN114584102A CN202210235692.2A CN202210235692A CN114584102A CN 114584102 A CN114584102 A CN 114584102A CN 202210235692 A CN202210235692 A CN 202210235692A CN 114584102 A CN114584102 A CN 114584102A
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 9
- 235000019687 Lamb Nutrition 0.000 description 7
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
- H03H9/02732—Bilateral comb like grating lines
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A radio frequency resonator and a filter relate to the technical field of resonators. The radio frequency resonator comprises a substrate, a piezoelectric layer positioned on the substrate and an upper electrode positioned on the piezoelectric layer; the upper electrode comprises a first electrode array and a second electrode array with the potential opposite to that of the first electrode array, the first electrode array and the second electrode array respectively comprise a plurality of sub-electrodes arranged side by side, and the sub-electrodes of the first electrode array and the sub-electrodes of the second electrode array are alternately arranged; wherein the piezoelectric layer includes a first region at the center thereof and a second region outside the first region, and the average width of the sub-electrodes located in the first region is larger than the average width of the sub-electrodes located in the second region. The radio frequency resonator can effectively reduce energy leakage, further excite piezoelectric layer piezoelectric effect and effectively inhibit pseudo mode.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a radio frequency resonator and a filter.
Background
The radio frequency resonators are mainly classified into surface acoustic wave resonators (SAW) and Film Bulk Acoustic Resonators (FBAR). Among them, the surface acoustic wave resonator has been gradually replaced by a thin film bulk acoustic wave resonator because the manufacturing process is simple, but the operating frequency is lower than 2 GHz. The working frequency of the film bulk acoustic resonator can reach 10GHz, the effective electromechanical coupling coefficient of the FBAR based on the aluminum nitride film material can reach 7%, but the resonant frequency of the FBAR depends on the thickness of the piezoelectric layer, so that the multi-frequency device is difficult to integrate on a single wafer on the basis of not using an external circuit and not increasing the complexity of the manufacturing process. To solve this problem, lamb wave resonators with various frequencies can be monolithically integrated.
The structure of a traditional lamb wave resonator is a sandwich structure formed by a top electrode, a piezoelectric layer and a bottom electrode which are inserted and are uniform in size. The existing lamb wave resonator can adjust the working frequency by adjusting the distance between the interdigital electrodes, but simultaneously, the existing lamb wave resonator has higher electrode resistance, larger electric energy loss and overlarge device size due to the existence of the interdigital electrodes, so that the quality factor and the effective electromechanical coefficient of the lamb wave resonator are lower than those of an FBAR (fiber bulk acoustic resonator), and the lamb wave resonator is also obvious in pseudo mode, so that the lamb wave resonator is still in an experimental stage and cannot be used commercially at times.
Disclosure of Invention
The invention aims to provide a radio frequency resonator and a filter, which can effectively reduce energy leakage, further excite piezoelectric layer piezoelectric effect and effectively inhibit pseudo mode.
The embodiment of the invention is realized by the following steps:
in one aspect of the invention, a radio frequency resonator is provided, which includes a substrate, a piezoelectric layer on the substrate, and an upper electrode on the piezoelectric layer; the upper electrode comprises a first electrode array and a second electrode array with the potential opposite to that of the first electrode array, the first electrode array and the second electrode array respectively comprise a plurality of sub-electrodes arranged side by side, and the sub-electrodes of the first electrode array and the sub-electrodes of the second electrode array are alternately arranged; wherein the piezoelectric layer includes a first region at the center thereof and a second region outside the first region, and an average width of the sub-electrodes located in the first region is larger than an average width of the sub-electrodes located in the second region. The radio frequency resonator can effectively reduce energy leakage, further excite piezoelectric lamination piezoelectric effect and effectively inhibit pseudo mode.
Optionally, the width of each sub-electrode in the first region is greater than the width of any one of the sub-electrodes in the second region.
Optionally, in the first region, the widths of two adjacent sub-electrodes are different.
Optionally, the first electrode array and the second electrode array are respectively interdigital electrodes.
Optionally, the first electrode array and the second electrode array are each a ring electrode array.
Optionally, each sub-electrode comprises a plurality of electrode blocks, and two adjacent electrode blocks are connected by a bridge or an electric connection line.
Optionally, the shape of the electrode block is any one of circular, oval and polygonal; and/or the shape of the bridge is any one of a straight line shape, a circular shape, an arc shape and a polygonal shape.
Optionally, the material of the piezoelectric layer is any one of lithium niobate, lithium tantalate, aluminum nitride, barium strontium titanate or doped aluminum nitride, lead zirconate titanate piezoelectric ceramics or a combination of at least two of the above.
Optionally, the material of the upper electrode is any one of platinum, molybdenum, gold, tungsten, copper, chromium, and aluminum, or a combination of at least two of the foregoing.
In another aspect of the invention, a filter is provided, which comprises the above-mentioned radio frequency resonator.
The beneficial effects of the invention include:
the radio frequency resonator comprises a substrate, a piezoelectric layer positioned on the substrate and an upper electrode positioned on the piezoelectric layer; the upper electrode comprises a first electrode array and a second electrode array with the potential opposite to that of the first electrode array, the first electrode array and the second electrode array respectively comprise a plurality of sub-electrodes arranged side by side, and the sub-electrodes of the first electrode array and the sub-electrodes of the second electrode array are alternately arranged; wherein the piezoelectric layer includes a first region at the center thereof and a second region outside the first region, and the average width of the sub-electrodes located in the first region is larger than the average width of the sub-electrodes located in the second region. The radio frequency resonator provided by the application sets the average width of the sub-electrodes positioned in the middle of the piezoelectric layer to be larger than the average width of the sub-electrodes positioned in the edge of the piezoelectric layer, so that the energy of the radio frequency resonator is mainly concentrated in the middle of the radio frequency resonator, the energy dissipation is reduced fundamentally, the piezoelectric effect of the piezoelectric layer is further excited, and the pseudo mode is effectively inhibited. Meanwhile, the structure with the larger width of the sub-electrode in the middle position completely accords with the micro-nano processing process flow, and no additional process step is needed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a radio frequency resonator according to some embodiments of the present invention;
FIG. 2 is a top view of the upper electrode on the piezoelectric layer of FIG. 1;
fig. 3 is a second schematic structural diagram of an rf resonator according to some embodiments of the present invention;
FIG. 4 is a top view of the upper electrode on the piezoelectric layer of FIG. 3;
FIG. 5 is a schematic structural diagram of an upper electrode as a ring electrode array according to some embodiments of the present invention;
fig. 6 is a schematic structural diagram of a two-dimensionally distributed upper electrode according to some embodiments of the present invention;
fig. 7 is a mode diagram obtained by simulation of a radio frequency resonator provided in a conventional structure;
fig. 8 is a simulated mode diagram of a radio frequency resonator provided in accordance with some embodiments of the present invention;
figure 9 is a graph comparing impedance curves for a radio frequency resonator provided in accordance with some embodiments of the present invention and a radio frequency resonator provided in accordance with a conventional configuration;
fig. 10 is a graph of the measured impedance of a conventional rf resonator;
fig. 11 is a graph of measured impedance of an rf resonator according to some embodiments of the present invention.
Icon: 10-a substrate; 11-a cavity; 20-a piezoelectric layer; 21-a first region; 22-a second region; 30-an upper electrode; 31-a first electrode array; 32-a second electrode array; 33-sub-electrodes; 331-electrode block; 332-a bridge; 40-lower electrode.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the invention and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the invention and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below …" or "above …" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1, the present embodiment provides a radio frequency resonator, which includes a substrate 10, a piezoelectric layer 20 on the substrate 10, and an upper electrode 30 on the piezoelectric layer 20; the upper electrode 30 comprises a first electrode array 31 and a second electrode array 32 with the electric potential opposite to that of the first electrode array 31, the first electrode array 31 and the second electrode array 32 respectively comprise a plurality of sub-electrodes 33 arranged side by side, and the sub-electrodes 33 of the first electrode array 31 and the sub-electrodes 33 of the second electrode array 32 are alternately arranged; wherein the piezoelectric layer 20 includes a first region 21 at the center thereof and a second region 22 outside the first region 21, and an average width of the sub-electrodes 33 located in the first region 21 is larger than an average width of the sub-electrodes 33 located in the second region 22. The radio frequency resonator can effectively reduce energy leakage, further excite the piezoelectric layer 20 piezoelectric effect and effectively suppress pseudo modes.
The radio frequency resonator can be a solid state assembled resonator or a cavity type film bulk acoustic resonator. When the film bulk acoustic resonator is a cavity type film bulk acoustic resonator, a cavity 11 may be disposed on a side of the substrate 10 close to the piezoelectric layer 20, the cavity 11 in the substrate 10 may be obtained by filling a sacrificial material in an early stage and releasing the sacrificial material in a later stage, which is well known to those skilled in the art, and thus, the details of the present application are not repeated. In the case of a solid-State Mounted Resonator (SMR), a bragg reflector formed by alternately arranging high and low acoustic impedance layers may be provided between the substrate 10 and the piezoelectric layer 20 to reflect the acoustic wave. For ease of understanding and explanation, the present application mainly exemplifies that the rf resonator is a cavity type film bulk acoustic resonator.
The overlapping areas of the cavity 11, the piezoelectric layer 20 and the upper electrode 30 along the stacking direction of the levels of the radiofrequency resonator form the resonance area of the radiofrequency resonator.
It should be noted that the radio frequency resonator provided by the present application can be used for surface acoustic wave resonators and bulk acoustic wave resonators.
In the present embodiment, the rf resonator may include the lower electrode 40, or may not include the lower electrode 40. When the lower electrode 40 is not provided, since the upper electrode 30 includes the first electrode array 31 and the second electrode array 32, and the potentials of the first electrode array 31 and the second electrode array 32 are opposite (i.e., the first electrode array 31 and the second electrode array 32 can be respectively switched on with positive alternating current and negative alternating current), an electric signal can pass through the first electrode array 31 and the second electrode array 32 to further excite longitudinal acoustic waves inside the piezoelectric layer 20.
The first electrode array 31 and the second electrode array 32 respectively include a plurality of sub-electrodes 33 arranged side by side, as shown in fig. 2, that is, the first electrode array 31 includes a plurality of sub-electrodes 33 arranged side by side, and the second electrode array 32 also includes a plurality of sub-electrodes 33 arranged side by side. In the present embodiment, the sub-electrodes 33 of the first electrode array 31 and the sub-electrodes 33 of the second electrode array 32 are alternately arranged, i.e., as shown in fig. 2.
Referring to fig. 2, the piezoelectric layer 20 includes a first area 21 and a second area 22, wherein the first area 21 is located in a middle portion of the piezoelectric layer 20, and the second area 22 is located at an edge of the piezoelectric layer 20. In the present embodiment, the average width of the sub-electrodes 33 located in the first region 21 is greater than the average width of the sub-electrodes 33 located in the second region 22. For example, taking fig. 2 as an example, the sub-electrodes 33 located in the first region 21 include three sub-electrodes (one of the sub-electrodes 33 is the sub-electrode 33 of the second electrode array 32, and the other two sub-electrodes 33 are the sub-electrodes 33 of the first electrode array 31), and the sub-electrodes 33 located in the second region 22 include four sub-electrodes (two of the sub-electrodes 33 are the sub-electrodes 33 of the second electrode array 32, and the other two sub-electrodes 33 are the sub-electrodes 33 of the first electrode array 31), in which case, the average width of the three sub-electrodes 33 located in the first region 21 is greater than the average width of the four sub-electrodes 33 located in the second region 22. It should be understood that the width direction of the sub-electrodes 33 is the same as the arrangement direction of the first electrode array 31 and the second electrode array 32, and corresponds to the horizontal direction in fig. 2.
Since the rf resonator is in operation, the electric energy is mainly concentrated in the electrode layer, and the piezoelectric effect of the piezoelectric layer 20 is excited by the electric energy, so as to generate an acoustic wave. Therefore, the invention can concentrate the energy at the middle position of the radio frequency resonator by increasing the size of the middle part of the upper electrode 30 of the radio frequency resonator and increasing the metallization ratio of the radio frequency resonator, thereby further exciting the piezoelectric effect of the piezoelectric layer 20 at the middle position of the radio frequency resonator and weakening the piezoelectric effect at the edge area of the radio frequency resonator, thus radically reducing the energy leakage.
Referring to fig. 7 and 8, fig. 7 is a mode diagram obtained by simulation of a radio frequency resonator provided in a conventional structure, and fig. 8 is a mode diagram obtained by simulation of a radio frequency resonator provided in the present application. Through analysis of mode diagrams of the two structures, it is obvious that the radio frequency resonator provided by the application can effectively concentrate energy in a middle area of the resonator compared with a traditional structure, and can effectively excite a piezoelectric effect of the piezoelectric layer 20, and at a resonance frequency point, the piezoelectric layer 20 of the structure provided by the invention vibrates obviously stronger than the traditional structure.
Referring to fig. 9, fig. 9 is a graph comparing impedance curves of the rf resonator provided in the present application and the rf resonator provided in the conventional structure (in fig. 9, the impedance curve of the rf resonator provided in the present application is shown by a solid line, and the impedance curve of the rf resonator provided in the conventional structure is shown by a dotted line). It can be seen that the impedance curve of the radio frequency resonator provided by the application is significantly sharper than that of the radio frequency resonator provided by the traditional structure, and the application is obviously better than the traditional structure by combining the simulation results.
Referring to fig. 10 and 11, fig. 10 is a graph showing an impedance curve measured by an rf resonator provided in a conventional structure; fig. 11 is a measured impedance curve of the rf resonator provided in the present application. According to fig. 11, the rf resonator provided by the present application can reach more than 5GHz, the bandwidth is more than 25%, and the impedance curve of the present application is smoother compared with the rf resonator provided by the conventional structure, and can effectively reduce the generation of stray modes, so that the main mode vibration is more obvious, and the energy is more concentrated in the main mode. Compared with the traditional structure, the structure can effectively inhibit the pseudo mode between the series resonance frequency and the parallel resonance frequency, and meanwhile, the Q value is improved compared with the traditional structure, namely, the structure can effectively inhibit the stray mode, improve the resonance of the main mode and further improve the performance of the resonator.
In summary, the radio frequency resonator provided by the present application includes a substrate 10, a piezoelectric layer 20 located on the substrate 10, and an upper electrode 30 located on the piezoelectric layer 20; the upper electrode 30 comprises a first electrode array 31 and a second electrode array 32 with the electric potential opposite to that of the first electrode array 31, the first electrode array 31 and the second electrode array 32 respectively comprise a plurality of sub-electrodes 33 arranged side by side, and the sub-electrodes 33 of the first electrode array 31 and the sub-electrodes 33 of the second electrode array 32 are alternately arranged; wherein the piezoelectric layer 20 includes a first region 21 at the center thereof and a second region 22 outside the first region 21, and an average width of the sub-electrodes 33 located in the first region 21 is larger than an average width of the sub-electrodes 33 located in the second region 22. The radio frequency resonator provided by the application sets the average width of the sub-electrode 33 at the middle position of the piezoelectric layer 20 to be larger than the average width of the sub-electrode 33 at the edge position of the piezoelectric layer 20, so that the energy of the radio frequency resonator is mainly concentrated in the middle of the radio frequency resonator, the energy dissipation is reduced fundamentally, the piezoelectric effect of the piezoelectric layer 20 is further excited, and the pseudo mode is effectively suppressed. Meanwhile, the structure with the larger width of the sub-electrode 33 in the middle position completely accords with the micro-nano processing process flow, and no additional process step is needed.
In this embodiment, the average width of the sub-electrodes 33 located in the first region 21 is greater than the average width of the sub-electrodes 33 located in the second region 22, which may include at least the following two cases:
in a first possible case, as shown in fig. 1 and 2, the width of each sub-electrode 33 located in the first region 21 is greater than the width of any one of the sub-electrodes 33 located in the second region 22.
In a second possible case, as shown in fig. 3 and 4, the widths of two adjacent sub-electrodes 33 are different in the first region 21. That is, the sub-electrodes 33 of the first region 21 are formed by the sub-electrodes 33 spaced apart from each other. The sub-electrodes 33 in the first region 21 may include two widths (i.e., a first width and a second width, where the first width is greater than the second width, and the widths of two adjacent sub-electrodes 33 are the first width and the second width, respectively), or may include multiple widths (in short, the widths of the sub-electrodes 33 in the first region 21 may be different from each other, or may be partially the same and partially different from each other, etc.).
Also, in the present embodiment, the first electrode array 31 and the second electrode array 32 may be alternatively interdigital electrodes, as shown in fig. 2 and 4.
Alternatively, the first electrode array 31 and the second electrode array 32 may be ring-shaped electrode arrays, respectively, as shown in fig. 5. At this time, the sub-electrodes 33 of the first electrode array 31 are distributed in a ring shape, and the sub-electrodes 33 of the second electrode array 32 are also distributed in a ring shape.
Still alternatively, as shown in fig. 6, each sub-electrode 33 may also include a plurality of electrode blocks 331, and two adjacent electrode blocks 331 are connected by a bridge 332 or an electrical connection line. That is, the first electrode array 31 includes a plurality of sub-electrodes 33 arranged side by side, each sub-electrode 33 includes a plurality of electrode blocks 331, and two adjacent electrode blocks 331 are connected by a bridge 332 or an electrical connection line; the second electrode array 32 also includes a plurality of sub-electrodes 33 arranged side by side, each sub-electrode 33 includes a plurality of electrode blocks 331, and two adjacent electrode blocks 331 are connected by a bridge 332 or an electrical connection line. In this way, the first electrode array 31 and the second electrode array 32 are two-dimensionally distributed electrodes.
It should be noted that, in this case, since the average width of the sub-electrodes 33 located in the first region 21 is larger than the average width of the sub-electrodes 33 located in the second region 22, the average diameter of the electrode blocks 331 of the sub-electrodes 33 located in the first region 21 should be larger than the average diameter of the electrode blocks 331 of the sub-electrodes 33 located in the second region 22, as shown in fig. 6.
Alternatively, the shape of the electrode block 331 may be any one of a circle, an ellipse, and a polygon (the shape of the electrode block 331 shown in fig. 6 is a circle); and/or, the shape of the bridge 332 may be any one of a straight line shape, a circular shape, an arc shape and a polygonal shape (the shape of the bridge 332 shown in fig. 6 is a straight line shape).
In the present embodiment, the material of the piezoelectric layer 20 may be any one of lithium niobate, lithium tantalate, aluminum nitride, barium strontium titanate, doped aluminum nitride, lead zirconate titanate piezoelectric ceramics, or a combination of at least two of them.
Alternatively, the material of the upper electrode 30 may be any one of platinum, molybdenum, gold, tungsten, copper, chromium, aluminum, or a combination of at least two thereof.
In another aspect of the invention, a filter is provided, which comprises the above-mentioned radio frequency resonator. Since the specific structure and the advantageous effects of the rf resonator have been described in detail in the foregoing, the detailed description of the present application is omitted.
The above description is only an alternative embodiment of the present invention and is not intended to limit the present invention, and various modifications and variations of the present invention may occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
Claims (10)
1. A radio frequency resonator comprising a substrate, a piezoelectric layer on the substrate, and an upper electrode on the piezoelectric layer; the upper electrode comprises a first electrode array and a second electrode array with the potential opposite to that of the first electrode array, the first electrode array and the second electrode array respectively comprise a plurality of sub-electrodes arranged side by side, and the sub-electrodes of the first electrode array and the sub-electrodes of the second electrode array are alternately arranged;
wherein the piezoelectric layer comprises a first area positioned in the center of the piezoelectric layer and a second area positioned outside the first area, and the average width of the sub-electrodes positioned in the first area is larger than the average width of the sub-electrodes positioned in the second area.
2. The rf resonator according to claim 1, wherein a width of each sub-electrode located at the first region is larger than a width of any one of the sub-electrodes located at the second region.
3. The rf resonator of claim 1, wherein the widths of adjacent two of the sub-electrodes are different in the first region.
4. The radio frequency resonator according to any of claims 1 to 3, characterized in that the first and second electrode arrays are respectively interdigitated electrodes.
5. The radio frequency resonator according to any of claims 1 to 3, characterized in that the first and second electrode arrays are each a ring electrode array.
6. The resonator according to any of claims 1 to 3, characterized in that each of said sub-electrodes comprises a plurality of electrode blocks, adjacent two of said electrode blocks being connected by a bridge or an electrical connection line.
7. The RF resonator according to claim 6, wherein the electrode block has a shape of any one of a circle, an ellipse and a polygon; and/or the shape of the bridge is any one of a straight line shape, a circular shape, an arc shape and a polygonal shape.
8. The rf resonator of claim 1, wherein the piezoelectric layer is made of any one or a combination of at least two of lithium niobate, lithium tantalate, aluminum nitride, barium strontium titanate, or doped aluminum nitride, lead zirconate titanate based piezoelectric ceramics.
9. The radio frequency resonator according to claim 1, wherein the material of the upper electrode is any one of platinum, molybdenum, gold, tungsten, copper, chromium, aluminum or a combination of at least two of the above.
10. A filter comprising a radio frequency resonator according to any one of claims 1 to 9.
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