CN114584084A - Low-noise amplifier circuit and signal transceiver circuit - Google Patents
Low-noise amplifier circuit and signal transceiver circuit Download PDFInfo
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- CN114584084A CN114584084A CN202210163661.0A CN202210163661A CN114584084A CN 114584084 A CN114584084 A CN 114584084A CN 202210163661 A CN202210163661 A CN 202210163661A CN 114584084 A CN114584084 A CN 114584084A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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Abstract
The invention discloses a low-noise amplifying circuit and a signal transceiving circuit, comprising a signal amplifying circuit, a first protection circuit and a second protection circuit; the first protection circuit is coupled to an input path of the signal amplification circuit at a first end, is connected with a ground end at a second end, and comprises a low-resistance mode and a high-resistance mode; one end of the second protection circuit is coupled on the input path of the signal amplification circuit, and the other end of the second protection circuit is connected with the grounding end; when the signal amplification circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in an input path, the leakage signal is released to the ground through the first protection circuit when the leakage signal is smaller than a conduction threshold value of the second protection circuit, and the leakage signal is released to the ground through the first protection circuit and the second protection circuit together when the leakage signal is larger than or equal to the conduction threshold value of the second protection circuit. The technical scheme can comprehensively and effectively inhibit leakage signals and effectively protect the low-noise amplifying circuit.
Description
Technical Field
The invention relates to the technical field of radio frequency integrated circuits, in particular to a low-noise amplifying circuit and a signal transceiving circuit.
Background
A Low Noise Amplifier (LNA) is generally used as a high-frequency or intermediate-frequency preamplifier of various radio receivers, and can amplify a weak signal received by an antenna on a receiving path.
At present, in order to ensure high gain and small noise performance of a low noise amplifier circuit, the voltage withstanding performance of an amplifying transistor in the low noise amplifier circuit is poor. However, the conventional low-noise amplifier circuit is easily interfered and influenced by leakage signals on other paths in the using process, so that the service life of the amplifier transistor in the low-noise amplifier circuit is greatly shortened, and the reliability of the amplifier transistor in the low-noise amplifier circuit is influenced.
Disclosure of Invention
The embodiment of the invention provides a low-noise amplifying circuit and a signal transceiving circuit, which are used for solving the problem that a leakage signal influences the reliability of an amplifying transistor in the low-noise amplifying circuit.
A low-noise amplification circuit comprises a signal amplification circuit, a first protection circuit and a second protection circuit;
the first end of the first protection circuit is coupled on an input path of the signal amplification circuit, the second end of the first protection circuit is connected with a grounding end, and the first protection circuit comprises a low-resistance mode and a high-resistance mode;
one end of the second protection circuit is coupled to the input path of the signal amplification circuit, and the other end of the second protection circuit is connected with a grounding end;
when the signal amplification circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in the input path, the leakage signal is released to the ground through the first protection circuit when the leakage signal is smaller than a conduction threshold of the second protection circuit, and the leakage signal is released to the ground through the first protection circuit and the second protection circuit when the leakage signal is larger than or equal to the conduction threshold of the second protection circuit.
Further, when the signal amplification circuit is in an operating state, the first protection circuit is in a high-impedance mode.
Further, when the second protection circuit is in a conducting state, the impedance presented by the second protection circuit is smaller than the impedance presented by the first protection circuit.
Further, the first protection circuit comprises a protection switch, and when the signal amplification circuit is in a working state, the protection switch is turned off.
Further, the first protection circuit includes a first resistor connected in series with the protection switch.
Further, the first protection circuit includes an adjustable resistor.
Further, the protection switch comprises at least one field effect transistor; each field effect transistor is connected in sequence, the source electrode of the first-end field effect transistor connected in sequence is connected to the input path of the signal amplifying circuit, the drain electrode of the tail-end field effect transistor connected in sequence is connected with the grounding end, the drain electrode of the first-end field effect transistor is connected with the source electrode of the adjacent field effect transistor, the source electrode of the tail-end field effect transistor is connected with the drain electrode of the adjacent field effect transistor, and the drain electrode of the first-end field effect transistor and the source electrode of the tail-end field effect transistor are adjacent in two adjacent field effect transistors connected in sequence between the first-end field effect transistor and the tail-end field effect transistor.
Further, the second protection circuit comprises a first diode array and a second diode array, and the first diode array and the second diode array are connected in anti-parallel; the conduction threshold of the second protection circuit is positively correlated to the number of diodes of the first diode array or the second diode array.
Further, the first diode array comprises at least one first diode, the second diode array comprises at least one second diode, each first diode is connected in series, and each second diode is connected in series.
Further, the number of the first diodes in the first diode array is the same as the number of the second diodes in the second diode array.
A low-noise amplification circuit comprises a signal amplification circuit, a first protection circuit and a second protection circuit;
the first end of the first protection circuit is coupled on an input path of the signal amplification circuit, the second end of the first protection circuit is connected with a grounding end, and the first protection circuit comprises a low-resistance mode and a high-resistance mode;
one end of the second protection circuit is coupled on an input path of the signal amplification circuit, the other end of the second protection circuit is connected with a grounding end, the second protection circuit comprises a first diode array and a second diode array, the first diode array and the second diode array are connected in reverse parallel, and the conduction threshold value of the second protection circuit is positively correlated with the number of diodes of the first diode array or the second diode array;
when the signal amplification circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in the input path, the second protection circuit is in a non-conducting state when the voltage of the leakage signal is smaller than the conducting threshold of the second protection circuit, and the second protection circuit is in a conducting state when the voltage of the leakage signal is larger than or equal to the conducting threshold of the second protection circuit.
A signal transceiving circuit comprising a transmit path and a receive path, the transmit path configured to transmit a transmit signal to an antenna through a switch; the receiving path is configured to receive a receiving signal from the antenna through the switch and amplify the receiving signal; the receiving path comprises the low-noise amplifying circuit.
The low-noise amplifying circuit and the signal transceiving circuit comprise a signal amplifying circuit, a first protection circuit and a second protection circuit; the first protection circuit is coupled to an input path of the signal amplification circuit at a first end, is connected with a ground end at a second end, and comprises a low-resistance mode and a high-resistance mode; one end of the second protection circuit is coupled on the input path of the signal amplification circuit, and the other end of the second protection circuit is connected with the grounding end; when the signal amplifying circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in an input path, the leakage signal is released to the ground through the first protection circuit when the leakage signal is smaller than a conduction threshold of the second protection circuit, the leakage signal is released to the ground through the first protection circuit and the second protection circuit when the leakage signal is larger than or equal to the conduction threshold of the second protection circuit, when the second protection circuit is in a cut-off state, the first protection circuit releases the leakage signal input into the signal amplifying circuit to the ground, when the second protection circuit is in a conduction state, the first protection circuit and the second protection circuit jointly act to release the leakage signal leaked into the input path of the signal amplifying circuit to the ground, and the problem that the leakage signal affects the reliability of an amplifying transistor in the low-noise amplifying circuit is solved, therefore, the leakage signal is comprehensively and effectively processed, and the purpose of effectively protecting the low-noise amplifying circuit is achieved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a circuit diagram of a low noise amplifier circuit according to an embodiment of the present invention;
FIG. 2 is another circuit diagram of the low noise amplifier circuit according to an embodiment of the present invention;
FIG. 3 is another circuit diagram of the low noise amplifier circuit according to an embodiment of the present invention;
FIG. 4 is another circuit diagram of the low noise amplifier circuit according to an embodiment of the present invention;
fig. 5 is a circuit diagram of a signal transceiver circuit according to an embodiment of the invention.
In the figure: 10. a signal amplification circuit; 20. a first protection circuit; 30. a second protection circuit; 31. a first diode array; 32. a second diode array; 40. a transmission path; 50. a switch; 60. a duplexer; 70. an antenna.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.
It will be understood that when an element or layer is referred to as being "on …," "adjacent to …," "connected to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under …," "under …," "below," "under …," "over …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The present embodiment provides a low noise amplifier circuit, as shown in fig. 1, including a signal amplifier circuit 10, a first protection circuit 20, and a second protection circuit 30; a first terminal of the first protection circuit 20 is coupled to the input path of the signal amplifying circuit 10, a second terminal of the first protection circuit 20 is connected to the ground terminal, and the first protection circuit 20 includes a low impedance mode and a high impedance mode. One end of the second protection circuit 30 is coupled to the input path of the signal amplification circuit 10, and the other end of the second protection circuit 30 is connected to the ground terminal. When the signal amplifying circuit 10 is in a non-operating state, the first protection circuit 20 is in a low-impedance mode, if a leakage signal exists in an input path of the signal amplifying circuit 10, the leakage signal is released to the ground through the first protection circuit 20 when the leakage signal is smaller than a conduction threshold of the second protection circuit 30, and the leakage signal is released to the ground through the first protection circuit 20 and the second protection circuit 30 together when the leakage signal is greater than or equal to the conduction threshold of the second protection circuit 30.
The signal amplifying circuit 10 is configured to amplify a radio frequency input signal and output a radio frequency amplified signal. Preferably, the first protection circuit 20 is a switching protection circuit. The second protection circuit 30 is a circuit that can release the leak signal on the input path of the signal amplification circuit 10 to the ground terminal in the diode on state. The turn-on threshold is a voltage that puts the first protection circuit 20 or the second protection circuit 30 into a turned-on state, i.e., a turn-on voltage. In the present embodiment, since the second protection circuit 30 includes a diode having a turn-on voltage, the second protection circuit 30 can achieve the release of the leakage signal to the ground only when the voltage of the leakage signal on the input path of the signal amplification circuit 10 is greater than the turn-on voltage of the diode in the second protection circuit 30. However, when the voltage of the leakage signal on the input path of the signal amplification circuit 10 is lower than the on-voltage of the diode in the second protection circuit 30 when the signal amplification circuit 10 is in the non-operating state, the diode is in the off state, and the impedance value of the second protection circuit 30 is infinite at this time, and the leakage signal cannot be released to the ground.
Therefore, the low noise amplifier circuit of the present application is based on the second protection circuit 30, and a first protection circuit 20 is further connected to the input path of the signal amplifier circuit 10, and both the first protection circuit 20 and the second protection circuit 30 are coupled to the input path of the signal amplifier circuit 10. When the signal amplification circuit 10 is in a non-operating state, the first protection circuit 20 is in a low-resistance mode, that is, the first protection circuit 20 is in a conducting state, and if there is a leakage signal in the input path, the first protection circuit 20 can release the leakage signal in the input path of the signal amplification circuit 10 to the ground. Specifically, the first protection circuit 20 is configured to: releasing the leak signal to the ground when the voltage of the leak signal on the input path of the signal amplification circuit 10 is smaller than the on-voltage of the diode in the second protection circuit 30, that is, when the second protection circuit 30 is in an off state; and, when the voltage of the leak signal on the input path of the signal amplification circuit 10 is equal to or larger than the on voltage of the diode in the second protection circuit 30, that is, when the second protection circuit 30 is in an on state, releasing the leak signal to the ground in cooperation with the second protection circuit 30. The leakage signal in this embodiment may be a leakage signal leaking from another transmission path to the input path of the low-noise amplification circuit, or any other signal that may reduce the lifetime of the amplification transistor in the low-noise amplification circuit to affect the reliability of the amplification transistor in the low-noise amplification circuit.
As another example, the second protection circuit 30 has one end coupled to the input path of the signal amplification circuit 10 and the other end connected to the ground, because the second protection circuit 30 includes a diode and has a specific on-state voltage, when the signal amplification circuit 10 is in the non-operating state, the second protection circuit 30 can be in the on-state when the voltage of the leakage signal is greater than the specific on-state voltage, so as to release the leakage signal to the ground, compared with the conventional protection circuit, the leakage signal in the input path of the low noise amplification circuit cannot be fully and effectively processed, for example, some weak leakage signals cannot be fully and effectively released, when the signal amplification circuit 10 is in the non-operating state, the low noise amplification circuit of the present application can be fully and effectively processed under the combined action of the first protection circuit 20 and the second protection circuit 30, so as to avoid shortening the amplification transistor in the low noise amplification circuit by the leakage signal To affect the reliability of the amplifying transistor in the low noise amplifying circuit. Meanwhile, in this example, in order to protect the low-noise amplifier circuit more comprehensively and effectively when the signal amplifier circuit 10 is in a non-operating state, the first protection circuit 20 has a first end coupled to the input path of the signal amplifier circuit 10 and a second end connected to a ground end, where the impedance presented by the first protection circuit 20 in the low-resistance mode is small, usually ten or more ohms, so that the voltage of the leakage signal does not reach the on-state voltage of the second protection circuit 30, and when the leakage signal is in an off-state, the leakage signal in the input path is released to the ground end, so as to avoid the influence of the leakage signal on the lifetime and reliability of the amplifier transistor in the low-noise amplifier circuit. Further, the first protection circuit 20 in this embodiment is in a conducting state when the voltage of the leakage signal reaches the conducting voltage of the second protection circuit 30, and at this time, the leakage signal in the input path is released to the ground terminal by cooperating with the second protection circuit 30; therefore, release of leakage signals is further enhanced, and the low-noise amplifying circuit is protected more comprehensively and effectively.
In this embodiment, when the signal amplification circuit 10 is in a non-operating state, the first protection circuit 20 can release the leakage signal input into the signal amplification circuit 10 to the ground when the second protection circuit 30 is in an off state, and when the second protection circuit 30 is in an on state, the first protection circuit and the second protection circuit 30 jointly act to release the leakage signal input into the signal amplification circuit 10 to the ground, so that the release of the leakage signal can be realized in a large voltage range, the problem that the leakage signal affects the reliability of an amplification transistor in a low-noise amplification circuit is solved, the leakage signal is comprehensively and effectively processed, and the purpose of effectively protecting the low-noise amplification circuit is achieved.
In a specific embodiment, when the signal amplifying circuit 10 is in the operating state, the first protection circuit 20 is in the high impedance mode. In this embodiment, when the signal amplification circuit 10 is in an operating state, that is, when the signal amplification circuit 10 amplifies the radio frequency signal, the first protection circuit 20 is in a high impedance mode, and prevents the radio frequency signal from being released to the ground.
Further, as shown in fig. 2, the signal amplification circuit 10 includes at least one amplification transistor. Preferably, the signal amplification circuit 10 comprises two amplification transistors connected in series with each other: a first amplifying transistor M21 and a second amplifying transistor M22. For example, the first amplifying transistor M21 and the second amplifying transistor M22 may be BJT transistors (e.g., HBT transistors) or field effect transistors, so as to amplify the radio frequency input signal for multiple times when the low noise amplifying circuit is in the signal amplifying mode, thereby improving the gain of the low noise amplifying circuit. In an embodiment, when the first amplifying transistor M21 and the second amplifying transistor M22 are BJT transistors, both the first amplifying transistor M21 and the second amplifying transistor M22 can be NPN transistors.
In another embodiment, the signal amplifying circuit 10 may further include a multi-stage amplifying circuit, where each stage of the amplifying circuit includes two amplifying transistors connected in series to each other, so as to implement multi-stage amplification of the rf input signal when the low noise amplifying circuit is in the signal amplifying mode, thereby improving the gain of the low noise amplifying circuit.
As shown in fig. 2, in an embodiment, the signal amplifying circuit 10 further includes a dc blocking capacitor C11 disposed between the signal input terminal Vin and the input terminal of the first amplifying transistor M21. The dc blocking capacitor C11 is configured to block dc signals in the rf input signal.
The base (gate) of the first amplifying transistor M21 is connected to the dc blocking capacitor C11, the collector (source) is connected to the emitter (drain) of the second amplifying transistor M22, and the emitter (drain) of the first amplifying transistor M21 is connected to the ground terminal through the gain adjustment inductor L1, and is configured to amplify the rf input signal for the first time. The base (gate) of the second amplifying transistor M22 is connected to the power supply terminal VDD, the collector (source) is connected to the signal output terminal Vout, and is connected to the power supply VDD through the load inductor L1, and the second amplifying transistor M22 is configured to amplify the rf input signal for the second time in the signal amplifying mode, thereby increasing the gain of the low noise amplifying circuit.
The gain adjustment inductor L1 is configured to perform gain adjustment on the signal amplification circuit 10, so as to increase the third-order intermodulation point IIP3 of the signal amplification circuit 10 while ensuring the gain of the signal amplification circuit 10, thereby improving the linearity of the signal amplification circuit 10.
In one embodiment, when the second protection circuit 30 is in the on state, the impedance presented by the second protection circuit 30 is smaller than the impedance presented by the first protection circuit 20.
In the present embodiment, in order to ensure that the low-noise amplifier circuit is more effectively protected when the voltage of the leakage signal on the input path of the signal amplifier circuit 10 is greater than the turn-on voltage of the second protection circuit 30, when the second protection circuit 30 is in the turn-on state, the impedance value presented by the second protection circuit 30 is smaller than the impedance value presented by the first protection circuit 20. For example, the first protection circuit 20 exhibits an impedance value of ten and several ohms in the on state, and the second protection circuit 30 exhibits an impedance value of several ohms in the on state; the second protection circuit 30 can quickly and effectively release the leakage signal on the input path of the low-noise amplification circuit to the ground, and the problem that the leakage signal affects the reliability of the amplification transistor in the low-noise amplification circuit is solved, so that the leakage signal is comprehensively and effectively processed, and the purpose of effectively protecting the low-noise amplification circuit is achieved.
In one embodiment, as shown in fig. 2, the first protection circuit 20 includes a protection switch.
As an example, the first terminal of the protection switch is coupled to the input path of the signal amplifying circuit 10, and the second terminal is connected to the ground terminal. In this example, when the protection switch is on, the impedance of the protection switch in the on state is relatively small, typically a few ohms or a dozen ohms, and the impedance in the off state is infinite. Therefore, when the signal amplifying circuit 10 is in a non-operating state, the protection switch is turned on to release the leakage signal to the ground, and when the signal amplifying circuit 10 is in an operating state, the protection switch is turned off to prevent the radio frequency input signal from being released to the ground.
In a specific embodiment, the first protection circuit 20 further comprises a first resistor connected in series with the protection switch. Specifically, since the impedance of the protection switch in the on state is usually very small, in order to stably release the leakage signal in the input path to the ground terminal, a first resistor connected in series with the protection switch may be further connected, and the protection switch and the first resistor cooperate to release the leakage signal to the ground terminal when the signal amplification circuit 10 is in the non-operating state. It should be noted that, in order to reduce the loss caused by the connection of the first resistor, the resistance of the first resistor should not be too large, and preferably, the first resistor is several ohms.
Further, as shown in fig. 2, the first protection circuit 20 includes an adjustable resistor R21, which facilitates adjusting the impedance of the first protection circuit 20 in the on state, so as to release the leakage signal to the ground terminal when the signal amplification circuit 10 is in the non-operating state.
In one embodiment, as shown in fig. 3, the protection switch includes at least one field effect transistor Q21; each field effect transistor Q21 is connected in sequence, each field effect transistor Q21 is connected in sequence, the source of the head end field effect transistor Q21 connected in sequence is connected to the input path of the signal amplifying circuit 10, the drain of the tail end field effect transistor Q21 connected in sequence is connected to the ground, the drain of the head end field effect transistor Q21 is connected to the source of the adjacent field effect transistor Q21, the source of the tail end field effect transistor Q21 is connected to the drain of the adjacent field effect transistor Q21, and the drain of the adjacent head end field effect transistor Q21 in the adjacent two field effect transistors Q21 connected in sequence between the head end field effect transistor Q21 and the tail end field effect transistor Q21 is connected to the source of the adjacent tail end field effect transistor Q21. The field effect transistor Q21 may be an N-channel field effect transistor or a P-channel field effect transistor.
As an example, as shown in fig. 3, the field effect transistor Q21 may be a P-channel field effect transistor, the field effect transistor Q21 has a source coupled to the input path of the signal amplification circuit 10, a drain connected to the ground, and an unconnected gate configured to control the on and off of the field effect transistor Q21. In this example, a low potential is applied to the gate to control the on-state of the field effect transistor Q21, and a high potential is applied to the gate to control the off-state of the field effect transistor Q21.
As another example, as shown in fig. 4, the field effect transistor Q21 may be an N-channel field effect transistor, the field effect transistor Q21 has a drain coupled to the input path of the signal amplification circuit 10, a source connected to the ground, and an unconnected gate configured to control the on and off of the field effect transistor Q21, for example, a high potential is applied to the gate to control the on of the field effect transistor Q21, and a low potential is applied to the gate to control the off of the field effect transistor Q21.
In this embodiment, the protection switch is a field effect transistor Q21, and the field effect transistor Q21 can be turned on when the signal amplification circuit 10 is in a non-operating state and turned off when the signal amplification circuit 10 is in an operating state, so that it is possible to prevent the rf input signal from being released to the ground when the signal amplification circuit 10 is in an operating state, which affects the gain of the signal amplification circuit 10, and further improve the stability of the low noise amplification circuit.
In the present embodiment, the protection switch includes at least one field effect transistor Q21, and thus, the impedance presented by the protection switch when turned on is correlated to the number of field effect transistors Q21. For example, the greater the number of field effect transistors Q21, the greater the impedance of the protection switch when conducting. The number of the field effect transistor can be specifically set by a user according to an actual use scene. For example, the smaller the leakage signal voltage to be suppressed or filtered, the fewer the number of field effect transistors Q21 connected in sequence.
In one embodiment, as shown in fig. 2, the second protection circuit 30 includes a first diode array 31 and a second diode array 32, and the first diode array 31 and the second diode array 32 are connected in anti-parallel. The turn-on threshold of the second protection circuit 30 is positively correlated with the number of diodes of the first diode array 31 or the second diode array 32.
As an example, when the voltage of the positive period of the leakage signal is greater than a specific turn-on voltage corresponding to the first diode array 31, the first diode array 31 is turned on, releasing the leakage signal to ground. When the voltage of the negative period of the leakage signal is greater than the specific turn-on voltage corresponding to the second diode array 32, the second diode array 32 is turned on, and the leakage signal is released to the ground. It should be noted that the specific on-voltage corresponding to the first diode array 31 and the specific on-voltage corresponding to the second diode array 32 may be the same or different. Preferably, the specific turn-on voltage corresponding to the first diode array 31 is the same as the specific turn-on voltage corresponding to the second diode array 32, so that the low noise amplification circuit is effectively protected.
As an example, the larger the number of diodes of the first diode array 31 or the second diode array 32, the larger the turn-on voltage of the second protection circuit 30, i.e. the turn-on threshold of the second protection circuit 30 is positively correlated with the number of diodes of the first diode array 31 or the second diode array 32.
In the present embodiment, the second protection circuit 30 includes the first diode array 31 and the second diode array 32, and the first diode array 31 and the second diode array 32 are connected in anti-parallel, thereby effectively protecting the low noise amplification circuit.
In one embodiment, as shown in fig. 2, the first diode array 31 includes at least one first diode D31, the second diode array 32 includes at least one second diode D32, each first diode D31 is connected in series, and each second diode D32 is connected in series.
Optionally, the first diode D31 and the second diode D32 may be Transient Voltage suppression diodes (TVS), and release the leakage signal in the input path to the ground by using the reverse breakdown operating principle of the PN junction, so as to protect the signal amplification circuit 10. The anode of the first diode in the first diode array 31 is coupled to the input path of the signal amplifying circuit 10, the cathode is connected to the anode of the next first diode, and so on, the cathode of the last first diode in the first diode array 31 is connected to the ground terminal. Conversely, the cathode of the first second diode in the second diode array 32 is connected to the ground, the anode is connected to the cathode of the next second diode, and so on, and the anode of the last second diode in the second diode array 32 is coupled to the input path of the signal amplification circuit 10. Accordingly, the leakage signal in the positive period may be discharged to the ground terminal through the first diode array 31, and the leakage signal in the negative period may be discharged to the ground terminal through the second diode array 32.
In this embodiment, the first diode array 31 includes at least one first diode D31, the second diode array 32 includes at least one second diode D32, each first diode D31 is connected in series, each second diode D32 is connected in series, when the voltage of the leakage signal leaked to the input path of the signal amplification circuit 10 is greater than the voltage of the first diode array 31 or a specific turn-on voltage corresponding to the second diode array 32, if the voltage of the leakage signal is a voltage in a positive period, each first diode D31 in the first diode array 31 is turned on to release the leakage signal to the ground, and if the voltage of the leakage signal is a voltage in a negative period, each second diode D32 in the second diode array 32 is turned on to release the leakage signal to the ground, thereby effectively protecting the signal amplification circuit 10. The specific turn-on voltage is related to the number of first diodes D31 or second diodes D32 in first diode array 31 or second diode array 32, and the larger the number of first diodes D31 in first diode array 31, the larger the corresponding turn-on voltage, and likewise, the larger the number of second diodes D32 in second diode array 32, the larger the corresponding turn-on voltage.
In one embodiment, as shown in fig. 2, the number of first diodes D31 in first diode array 31 is the same as the number of second diodes D32 in second diode array 32.
In the present embodiment, the number of the first diodes D31 in the first diode array 31 is the same as the number of the second diodes D32 in the second diode array 32, so as to improve the stability and reliability of the second protection circuit 30 during operation.
Further, as shown in fig. 2, the number of first diodes D31 in the first diode array 31 and the number of second diodes D32 in the second diode array 32 are in a direct proportion to the corresponding turn-on voltages.
In the present embodiment, the larger the number of first diodes D31 in first diode array 31, the larger the voltage required for first diode D31 to conduct in the forward direction, the larger the number of second diodes D32 in second diode array 32, the larger the voltage for second diode D32 to conduct in the reverse direction, and therefore, the conduction voltage of second protection circuit 30 is associated with the number of first diodes D31 in first diode array 31 and the number of second diodes D32 in second diode array 32.
In one embodiment, as shown in fig. 2, when the voltage of the leakage signal leaked to the input path of the signal amplification circuit 10 is greater than the turn-on voltage of the second protection circuit 30, the second protection circuit 30 exhibits an impedance value in direct proportion to the number of the first diodes D31 in the first diode array 31 and the number of the second diodes D32 in the second diode array 32.
In this example, the impedance value exhibited by the second protection circuit 30 is proportional to the number of first diodes D31 in the first diode array 31 and the number of second diodes D32 in the second diode array 32. Illustratively, the greater the number of the first diodes D31 and the second diodes D32, the greater the impedance values exhibited by the first diode array 31 and the second diode array 32, respectively, and thus the greater the impedance values exhibited by the second protection circuit 30. It is understood that the smaller the number of the first diodes D31 and the second diodes D32, the smaller the impedance values respectively exhibited by the first diode array 31 and the second diode array 32, and thus the smaller the impedance values exhibited by the second protection circuit 30.
In one embodiment, the impedance presented by the protection switch is related to the number and area of field effect transistors Q21.
In a specific embodiment, since the impedance presented by the second protection circuit 30 is smaller than the impedance presented by the first protection circuit 20 when the second protection circuit 30 is in the on state, in this example, in the case where the area of the effect transistor is determined; the greater the number of field effect transistors Q21, the greater the impedance of the first protection circuit 20, and therefore, in the case where the area of the field effect transistors in the protection switch is the same as the area of the first diodes in the first diode array 31, and the area of the field effect transistors in the protection switch is the same as the area of the second diodes in the second diode array 32, the greater the number of field effect transistors Q21 in the protection switch is than the number of first diodes in the first diode array 31, and/or the greater the number of field effect transistors Q21 in the protection switch is than the number of second diodes in the second diode array 32, so that when the second protection circuit 30 is in the on state, the impedance presented by the second protection circuit 30 is smaller than the impedance presented by the first protection circuit 20.
As an example, in the case that the area of the field effect transistor in the protection switch is the same as the area of the first diode in the first diode array 31, the number of the field effect transistors Q21 in the protection switch is larger than the number of the first diodes in the first diode array 31, in this example, when the voltage of the positive period of the leakage signal is larger than the specific on-state voltage of the first diode array 31, the impedance presented by the first protection circuit 20 is larger than the impedance presented by the second protection circuit 30, and the second protection circuit 30 can rapidly release the leakage signal in the low noise amplifier circuit to the ground, so as to achieve the more effective protection effect for the low noise amplifier circuit.
As another example, in the case that the area of the field effect transistor in the protection switch is the same as the area of the second diode in the second diode array 32, the number of the field effect transistor Q21 in the protection switch is greater than the number of the second diode in the second diode array 32, in this example, when the voltage of the negative period of the leakage signal is greater than the specific on-state voltage of the second diode array 32, the impedance presented by the first protection circuit 20 is greater than the impedance presented by the second protection circuit 30, and the second protection circuit 30 can rapidly release the leakage signal in the low noise amplification circuit to the ground, so as to achieve a more effective protection effect for the low noise amplification circuit.
As another example, in the case where the area of the field effect transistor in the protection switch is the same as the area of the first diode in the first diode array 31, and the area of the field effect transistor in the protection switch is the same as the area of the second diode in the second diode array 32, the number of the field effect transistors Q21 in the protection switch is larger than the number of the first diodes in the first diode array 31 and larger than the number of the second diodes in the second diode array 32, so that when the voltage of the negative period of the leakage signal is larger than the specific turn-on voltage of the first diode array 31 and the second diode array 32, the second protection circuit 30 can quickly release the leakage signal in the low noise amplification circuit to the ground, to achieve a more effective protection effect for the low noise amplification circuit.
In another embodiment, since the impedance presented by the second protection circuit 30 is smaller than the impedance presented by the first protection circuit 20 when the second protection circuit 30 is in the on state, in this example, the larger the area of the field effect transistor Q21 is, the larger the impedance presented by the first protection circuit 20 is, therefore, the impedance presented by the protection switch can be adjusted by configuring the area of the field effect transistor Q21, so that the impedance presented by the second protection circuit 30 is smaller than the impedance presented by the first protection circuit 20 when the second protection circuit 30 is in the on state.
In this embodiment, since the impedances presented by the protection switches are related to the number and area of the field effect transistors Q21, the impedances presented by the second protection circuit 30 can be made smaller than the impedances presented by the first protection circuit 20 by adjusting the number and area of the field effect transistors Q21, so that when the voltage of the leakage signal is greater than the specific on-voltage of the second protection circuit 30, the second protection circuit 30 can quickly release the leakage signal in the low noise amplification circuit to the ground, thereby solving the problem that the leakage signal affects the reliability of the amplification transistor in the low noise amplification circuit, and thus, fully and effectively processing the leakage signal to achieve the purpose of effectively protecting the low noise amplification circuit.
The present embodiment provides a low noise amplifier circuit, which includes a signal amplifier circuit 10, a first protection circuit 20, and a second protection circuit 30; a first end of the first protection circuit 20 is coupled to an input path of the signal amplification circuit 10, a second end of the first protection circuit 20 is connected to a ground terminal, and the first protection circuit 20 includes a low impedance mode and a high impedance mode; one end of the second protection circuit 30 is coupled to the input path of the signal amplification circuit 10, the other end of the second protection circuit 30 is connected to the ground, the second protection circuit 30 includes a first diode array 31 and a second diode array 32, the first diode array 31 and the second diode array 32 are connected in reverse parallel, and the conduction threshold of the second protection circuit 30 is positively correlated to the number of diodes of the first diode array 31 or the second diode array 32; when the signal amplifying circuit 10 is in a non-operating state, the first protection circuit 20 is in a low-resistance mode, if a leakage signal exists in an input path, the second protection circuit 30 is in a non-conducting state when the voltage of the leakage signal is smaller than the conducting threshold of the second protection circuit 30, and the second protection circuit 30 is in a conducting state when the voltage of the leakage signal is greater than or equal to the conducting threshold of the second protection circuit 30.
In the present embodiment, since the second protection circuit 30 includes the first diode array 31 and the second diode array 32, the diodes in the first diode array 31 and the second diode array 32 have the turn-on voltage, and the turn-on voltage of the second protection circuit 30 is positively correlated with the number of diodes in the first diode array 31 or the second diode array 32, for example, the larger the number of diodes in the first diode array 31 or the second diode array 32 is, the larger the turn-on voltage of the second protection circuit 30 is, and the second protection circuit 30 can realize the release of the leakage signal to the ground only when the voltage of the leakage signal on the input path of the signal amplification circuit 10 is larger than the turn-on voltage of the second protection circuit 30. However, when the voltage of the leakage signal on the input path of the signal amplification circuit 10 is smaller than the on voltage of the second protection circuit 30 when the signal amplification circuit 10 is in the non-operating state, the second protection circuit 30 is in the non-conducting state (off state), and the impedance value of the second protection circuit 30 is infinite at this time, and the leakage signal cannot be released to the ground terminal.
Therefore, the low noise amplifier circuit of the present application further includes a first protection circuit 20 connected to the input path of the signal amplifier circuit 10 based on the second protection circuit 30, and both the first protection circuit 20 and the second protection circuit 30 are coupled to the input path of the signal amplifier circuit 10. When the signal amplifying circuit 10 is in a non-operating state, the first protection circuit 20 is in a low-resistance mode, that is, in a state where the switch protection circuit is turned on, if there is a leakage signal in the input path, the leakage signal in the input path of the signal amplifying circuit 10 may be released to a circuit of the ground terminal. Specifically, the first protection circuit 20 is configured to: when the voltage of the leak signal on the input path of the signal amplification circuit 10 is smaller than the on voltage in the second protection circuit 30, that is, when the second protection circuit 30 is in an off state, the leak signal is released to the ground; and, when the voltage of the leak signal on the input path of the signal amplification circuit 10 is equal to or greater than the on voltage in the second protection circuit 30, that is, when the second protection circuit 30 is in an on state, releasing the leak signal to the ground in cooperation with the second protection circuit 30. The leakage signal in this embodiment may be a leakage signal that leaks from another transmission path to the input path of the low-noise amplifier circuit, or any other signal that may reduce the lifetime of the amplifying transistor in the low-noise amplifier circuit to affect the reliability of the amplifying transistor in the low-noise amplifier circuit.
As another example, the second protection circuit 30 has one end coupled to the input path of the signal amplification circuit 10 and the other end connected to the ground, and when the signal amplification circuit 10 is in the non-operating state, the second protection circuit 30 can be in the conducting state when the voltage of the leakage signal is greater than the specific conducting voltage, so as to release the leakage signal to the ground, compared with the conventional protection circuit which cannot fully and effectively process the leakage signal in the input path of the low noise amplification circuit, for example, cannot fully and effectively release some weak leakage signals, the low noise amplification circuit of the present application can fully and effectively process the leakage signal under the combined action of the first protection circuit 20 and the second protection circuit 30 when the signal amplification circuit 10 is in the non-operating state, so as to avoid the leakage signal from shortening the life of the amplification transistor in the low noise amplification circuit, to have an influence on the reliability of the amplifying transistor in the low noise amplifying circuit. Meanwhile, in this example, in order to protect the low-noise amplifier circuit more comprehensively and effectively when the signal amplifier circuit 10 is in a non-operating state, the first protection circuit 20 has a first end coupled to the input path of the signal amplifier circuit 10 and a second end connected to a ground end, where the impedance presented by the first protection circuit 20 in the low-resistance mode is small, usually ten or more ohms, so that the voltage of the leakage signal does not reach the on-state voltage of the second protection circuit 30, and when the leakage signal is in an off-state, the leakage signal in the input path is released to the ground end, so as to avoid the influence of the leakage signal on the lifetime and reliability of the amplifier transistor in the low-noise amplifier circuit. Further, the first protection circuit 20 in this embodiment is in a conducting state when the voltage of the leakage signal reaches the conducting voltage of the second protection circuit 30, and at this time, the leakage signal in the input path is released to the ground terminal by the cooperation with the second protection circuit 30; therefore, release of leakage signals is further enhanced, and the low-noise amplifying circuit is protected more comprehensively and effectively.
In this embodiment, when the signal amplification circuit 10 is in a non-operating state, the first protection circuit 20 can release the leakage signal input into the signal amplification circuit 10 to the ground when the second protection circuit 30 is in an off state, and when the second protection circuit 30 is in an on state, the first protection circuit and the second protection circuit 30 jointly act to release the leakage signal input into the signal amplification circuit 10 to the ground, so that the release of the leakage signal can be realized in a large voltage range, the problem that the leakage signal affects the reliability of an amplification transistor in a low-noise amplification circuit is solved, the leakage signal is comprehensively and effectively processed, and the purpose of effectively protecting the low-noise amplification circuit is achieved.
As shown in fig. 5, the present embodiment provides a signal transceiving circuit, including a transmitting path 40 and a receiving path, the transmitting path 40 being configured to transmit a transmitting signal to an antenna 70 through a switch 50; the reception path is configured to receive a reception signal from the antenna 70 through the changeover switch 50 and amplify the reception signal; the receive path includes the low noise amplification circuit in the above embodiment.
As an example, the radio frequency signal transmission path 40 has an input terminal connected to a transmission signal input terminal, and an output terminal connected to a first terminal of the switch 50; a low-noise amplifier circuit, the input end of which is connected to the second end of the switch 50 and the output end of which is connected to the input end of the received signal; a switch 50, the third terminal of which is connected to the duplexer 60; duplexer 60, coupled to antenna 70, is for receiving transmit signals from transmit path 40 and transmitting transmit signals to antenna 70, and for receiving receive signals from antenna 70 and transmitting receive signals to the receive path.
In this embodiment, when the switch 50 is switched to the transmitting path 40, that is, when the radio frequency signal is transmitted to the duplexer 60 through the transmitting path 40 and then transmitted through the antenna 70, the isolation of the switch 50 is effective, so that the radio frequency signal in the transmitting path 40 leaks to the receiving path through the switch 50, thereby affecting the amplifying transistor in the low noise amplifying circuit, and therefore, the first protection circuit 20 and the second protection circuit 30 are connected to the input path of the low noise amplifying circuit, thereby preventing the radio frequency leakage signal leaking to the receiving path from affecting the amplifying transistor in the low noise amplifying circuit, and thus effectively protecting the amplifying transistor in the low noise amplifying circuit.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (12)
1. A low-noise amplification circuit is characterized by comprising a signal amplification circuit, a first protection circuit and a second protection circuit;
the first end of the first protection circuit is coupled on an input path of the signal amplification circuit, the second end of the first protection circuit is connected with a grounding end, and the first protection circuit comprises a low-resistance mode and a high-resistance mode;
one end of the second protection circuit is coupled to the input path of the signal amplification circuit, and the other end of the second protection circuit is connected with a grounding end;
when the signal amplification circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in the input path, the leakage signal is released to the ground through the first protection circuit when the leakage signal is smaller than a conduction threshold of the second protection circuit, and the leakage signal is released to the ground through the first protection circuit and the second protection circuit when the leakage signal is larger than or equal to the conduction threshold of the second protection circuit.
2. The low-noise amplification circuit according to claim 1, wherein the first protection circuit is in a high-impedance mode when the signal amplification circuit is in an operating state.
3. The low-noise amplification circuit of claim 1, wherein when the second protection circuit is in a conducting state, the impedance presented by the second protection circuit is less than the impedance presented by the first protection circuit.
4. The low noise amplification circuit of claim 1, wherein the first protection circuit comprises a protection switch, and the protection switch is turned off when the signal amplification circuit is in an operating state.
5. The low noise amplification circuit of claim 4, wherein the first protection circuit comprises a first resistor connected in series with the protection switch.
6. The low noise amplification circuit of claim 1, wherein the first protection circuit comprises an adjustable resistance.
7. The low-noise amplification circuit of claim 4, wherein the protection switch comprises at least one field effect transistor; each field effect transistor is connected in sequence, the source electrode of the first-end field effect transistor connected in sequence is connected to the input path of the signal amplifying circuit, the drain electrode of the tail-end field effect transistor connected in sequence is connected with the grounding end, the drain electrode of the first-end field effect transistor is connected with the source electrode of the adjacent field effect transistor, the source electrode of the tail-end field effect transistor is connected with the drain electrode of the adjacent field effect transistor, and the drain electrode of the first-end field effect transistor and the source electrode of the tail-end field effect transistor are adjacent in two adjacent field effect transistors connected in sequence between the first-end field effect transistor and the tail-end field effect transistor.
8. The low noise amplification circuit of claim 1, wherein the second protection circuit comprises a first diode array and a second diode array, the first diode array and the second diode array being connected in anti-parallel; a turn-on threshold of the second protection circuit is positively correlated with the number of diodes of the first diode array or the second diode array.
9. The low noise amplification circuit of claim 8, wherein the first diode array comprises at least one first diode, the second diode array comprises at least one second diode, and each of the first diodes is connected in series with each other and each of the second diodes is connected in series with each other.
10. The low noise amplification circuit of claim 8, wherein the number of first diodes in the first array of diodes is the same as the number of second diodes in the second array of diodes.
11. A low-noise amplification circuit is characterized by comprising a signal amplification circuit, a first protection circuit and a second protection circuit;
the first end of the first protection circuit is coupled on an input path of the signal amplification circuit, the second end of the first protection circuit is connected with a grounding end, and the first protection circuit comprises a low-resistance mode and a high-resistance mode;
one end of the second protection circuit is coupled to an input path of the signal amplification circuit, the other end of the second protection circuit is connected with a grounding end, the second protection circuit comprises a first diode array and a second diode array, the first diode array and the second diode array are connected in reverse parallel, and the conduction threshold value of the second protection circuit is positively correlated with the number of diodes of the first diode array or the second diode array;
when the signal amplification circuit is in a non-working state, the first protection circuit is in a low-resistance mode, if a leakage signal exists in the input path, the second protection circuit is in a non-conducting state when the voltage of the leakage signal is smaller than the conducting threshold of the second protection circuit, and the second protection circuit is in a conducting state when the voltage of the leakage signal is larger than or equal to the conducting threshold of the second protection circuit.
12. A signal transceiving circuit comprising a transmit path and a receive path, the transmit path configured to transmit a transmit signal to an antenna via a switch; the receiving path is configured to receive a receiving signal from the antenna through the switch and amplify the receiving signal; the receive path includes a low noise amplification circuit as claimed in any one of claims 1 to 11.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210163661.0A CN114584084A (en) | 2022-02-22 | 2022-02-22 | Low-noise amplifier circuit and signal transceiver circuit |
| PCT/CN2023/075849 WO2023160432A1 (en) | 2022-02-22 | 2023-02-14 | Low-noise amplification circuit and signal transceiving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210163661.0A CN114584084A (en) | 2022-02-22 | 2022-02-22 | Low-noise amplifier circuit and signal transceiver circuit |
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| CN114584084A true CN114584084A (en) | 2022-06-03 |
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| CN202210163661.0A Pending CN114584084A (en) | 2022-02-22 | 2022-02-22 | Low-noise amplifier circuit and signal transceiver circuit |
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| WO (1) | WO2023160432A1 (en) |
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| WO2023160432A1 (en) * | 2022-02-22 | 2023-08-31 | 锐石创芯(深圳)科技股份有限公司 | Low-noise amplification circuit and signal transceiving circuit |
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| CN114584084A (en) * | 2022-02-22 | 2022-06-03 | 锐石创芯(深圳)科技股份有限公司 | Low-noise amplifier circuit and signal transceiver circuit |
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| WO2023160432A1 (en) | 2023-08-31 |
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