CN114574206A - Fluorescent powder for white light-emitting diode and synthetic method and application thereof - Google Patents
Fluorescent powder for white light-emitting diode and synthetic method and application thereof Download PDFInfo
- Publication number
- CN114574206A CN114574206A CN202210257499.9A CN202210257499A CN114574206A CN 114574206 A CN114574206 A CN 114574206A CN 202210257499 A CN202210257499 A CN 202210257499A CN 114574206 A CN114574206 A CN 114574206A
- Authority
- CN
- China
- Prior art keywords
- caygao
- fluorescent powder
- doping
- light
- mole fraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000843 powder Substances 0.000 title claims abstract description 37
- 238000010189 synthetic method Methods 0.000 title description 2
- 230000003213 activating effect Effects 0.000 claims abstract description 3
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004570 mortar (masonry) Substances 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 6
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 238000001308 synthesis method Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 231100000956 nontoxicity Toxicity 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000003786 synthesis reaction Methods 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 description 21
- 238000000295 emission spectrum Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000000695 excitation spectrum Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C09K11/7768—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
A fluorescent powder for white light-emitting diodes and a synthesis method and application thereof belong to the technical field of white light-emitting diodes. The matrix of the fluorescent powder is CaYGaO4The activating ion comprises Sm3+Wherein Sm3+In CaYGao4The mole fraction of the medium doping is 1-11%, the exciting light of the fluorescent powder is blue light with the wavelength of 404nm, the emitted light is orange light with the wavelength of 550-750 nm, and the optimal doping concentration is 1% Sm3+(ii) a The active ion further comprises Bi3+,Bi3+In CaYGao4:1%Sm3+The mole fraction of the medium doping is 3-7%. When Bi is present3+In CaYGaO4:1%Sm3+When the doping mole fraction is 3%, exciting light of the fluorescent powder is near ultraviolet light of 315nm, and blue light of 350-750 nm is emitted; when Bi is present3+In CaYGao4:1%Sm3+When the medium doping mole fraction is 7%, the exciting light of the fluorescent powder is near ultraviolet light with the wavelength of 315nm, and the emitted light is white light with the wavelength of 350-750 nm. The fluorescent powder synthesized by the invention has the characteristics of simple synthesis, no toxicity, no harm, stable physical and chemical properties, low cost, strong weather resistance, stable performance under long-time ultraviolet and blue light irradiation and the like.
Description
Technical Field
The invention relates to the technical field of white light-emitting diodes, in particular to fluorescent powder for a white light-emitting diode and a synthesis method and application thereof.
Background
In recent years, White Light Emitting Diodes (WLEDs) have been widely studied to replace conventional incandescent and fluorescent lamps because of their advantages of small size, environmental friendliness, ease of manufacture, long operating time, high efficiency, energy saving, etc., as compared to conventional lighting. In general, white light can be generated from a device that is a combination of a light emitting diode chip and a suitable phosphor, and thus, a WLED device is referred to as a phosphor-converted light emitting diode. At present, there are two common methods for preparing WLED, one is Y3Al5O12:Ce3+Phosphor-converted light emitting diode (pc-LEDs) devices synthesized from (YAG) yellow phosphor and blue InGaN light emitting diode chips that achieve the highest luminous efficiency but have a relatively high Correlated Color Temperature (CCT) due to their lack of red component in the Electroluminescent (EL) spectrum>4000 K) Sum and poor Color Rendering Index (CRI)<80) Limiting its advancement. The other is composed of a near ultraviolet chip and red, green and blue fluorescent powder. However, there is a serious problem of re-absorption between the three-color phosphors, resulting in a decrease in luminous efficiency and a low brightness of the finished product. Also, this problem is exacerbated for red phosphors because the human eye does not maintain high sensitivity to the red spectral region. Whichever method is chosen to package pc-WLEDs devices, phosphor is always a critical component because it has a large impact on device performance, such as luminous efficiency, critical current, critical temperature, and thermal stability.
Disclosure of Invention
The technical problem to be solved is as follows: aiming at the problems in the prior art, the invention provides the fluorescent powder for the white light-emitting diode and the synthesis method and the application thereof, and the fluorescent powder has the advantages of simple synthesis, no toxicity, no harm, stable physical and chemical properties, low cost, strong weather resistance, stable performance under long-time ultraviolet and blue light irradiation and the like.
The technical scheme is as follows: aThe fluorescent powder can be used for a white light-emitting diode, and the matrix of the fluorescent powder is CaYGaO4The activating ion comprises Sm3+Wherein Sm3+In CaYGao4The mole fraction of the medium doping is 1-11%.
Preferably, the active ion further comprises Bi3+,Bi3+In CaYGao4:1% Sm3+The mole fraction of the medium doping is 3-7%.
Preferably, Sm is the above-mentioned compound3+In CaYGao4The mole fraction of the medium doping is 1 percent, and the Bi is3+In CaYGao4The mole fraction of the medium doping is 3% or 7%.
Preferably, when Bi is present3+In CaYGao4When the doping mole fraction is 3%, exciting light of the fluorescent powder is near ultraviolet light of 315nm, and blue light of 350-750 nm is emitted; when Bi3+In CaYGao4When the medium doping mole fraction is 7%, the exciting light of the fluorescent powder is near ultraviolet light with the wavelength of 315nm, and the emitted light is white light with the wavelength of 350-750 nm.
The synthesis method of the fluorescent powder for the white light-emitting diode is characterized by comprising the following steps:
step one, calculating raw material CaCO according to the molar ratio of each component in the fluorescent powder3、Y2O3、Ga2O3、Sm2O3、Bi2O3Weighing, pouring the weighed materials into a container, mixing and grinding for 15-30 min;
placing the ground sample in an alumina crucible, and placing the crucible in a muffle furnace to calcine for 5-6 h at 1200-1300 ℃;
and step three, putting the sample obtained in the step two into a container, and grinding for 15-30 min again.
The method as claimed in claim 5, wherein the container in the first step and the third step is agate mortar.
The fluorescent powder for the white light-emitting diode is applied to the preparation of pc-WLEDs devices.
Has the advantages that: the fluorescent powder synthesized by the invention has the characteristics of simple synthesis, no toxicity, no harm, stable physical and chemical properties, low cost, strong weather resistance, stable performance under long-time ultraviolet and blue light irradiation and the like;
CaYGaO4in the presence of Sm3+In the process, orange light emitting fluorescent powder which can be effectively excited by blue light LED and near ultraviolet LED can be synthesized, a theoretical improvement scheme is provided for subsequently improving the condition that the current WLED red emission is lack, and Sm is co-doped3+And Bi3+Then, Bi3+And Sm3+Energy transfer of enhanced Sm3+By changing Bi under co-doping3+Adjusting the concentration of Bi3 +And Sm3+The emission intensity of the LED enables the emission color to be changed from blue to white light emission, white light emission which can be effectively excited by the near ultraviolet LED is achieved, and an improvement scheme is provided for solving the problem of serious reabsorption among three-color fluorescent powder when the WLED is formed by the current near ultraviolet chip and red, green and blue fluorescent powder.
Drawings
FIG. 1 shows CaYGaO example 14Doping with 1% of Sm3+The obtained fluorescent powder emits an excitation spectrogram under 604 nm;
FIG. 2 shows CaYGaO example 14 Sm doped with x%3+(x =1,3,5,7,9, 11) contrast plot of emission spectra excited at 404 nm;
FIG. 3 is a diagram showing Sm in example 13+Doped CaYGao4A plot of integrated intensity of orange emission at 550-750 nm;
FIG. 4 shows CaYGaO example 14Doping with 1% of Sm3+A subsequent CIE coordinate diagram;
FIG. 5 shows CaYGaO example 24Doping with 1% of Sm3+,3%Bi3+Emission spectrum at 315nm excitation;
FIG. 6 shows CaYGaO example 24Doping with 1% of Sm3+,3%Bi3+A subsequent CIE coordinate diagram;
FIG. 7 shows CaYGaO example 34Doping with 1% of Sm3+,7%Bi3+Emission spectrum of excitation at 315 nm;
FIG. 8 shows CaYGaO example 34Doping with 1% of Sm3+,7%Bi3+Excitation spectra emitted at 604nm and 445 nm;
FIG. 9 shows CaYGaO example 34Doping with 1% of Sm3+,7%Bi3+A subsequent CIE coordinate diagram;
FIG. 10 is CaYGaO comparative example 14Doping with 7% Bi3+Emission spectrum of excitation at 328 nm;
FIG. 11 is CaYGaO comparative example 14Doping with 7% Bi3+Excitation spectra emitted at 442 nm;
FIG. 12 shows CaYGaO4Doping with 7% Bi3+The obtained fluorescent powder emits a spectrogram under the excitation of 328nm and is doped with 1% Sm3+Then obtaining an excitation spectrogram normalization contrast diagram of the fluorescent powder under 604nm emission;
FIG. 13 shows CaYGaO4Doping with 1% of Sm3+,5%Bi3+Emission spectrum of excitation at 315 nm;
FIG. 14 shows CaYGaO4Doping with 1% of Sm3+,5%Bi3+A subsequent CIE coordinate diagram;
FIG. 15 shows CaYGaO4Doping with 1% of Sm3+,9%Bi3+Emission spectrum at 315nm excitation;
FIG. 16 shows CaYGaO4Doping with 1% of Sm3+,9%Bi3+A subsequent CIE coordinate diagram;
FIG. 17 shows CaYGaO4Doping with 1% of Sm3+,y%Bi3+Bi excited at (y =3,5,7, 9) 315nm3+A change in emission intensity;
FIG. 18 shows CaYGaO4Doping with 1% of Sm3+,y%Bi3+Sm excited at (y =3,5,7, 9) 315nm3+The emission intensity varies.
Detailed Description
The invention is further described below with reference to the accompanying drawings and specific embodiments.
In the examples of this specification, "% Sm3+"and"% Bi3+"percentage number represents mole fraction.
Example 1
Preparation of CaYGaO4:x%Sm3+(x =1,3,5,7,9, 11) phosphor,the method comprises the following steps:
(1) according to CaYGaO4: x%Sm3+(x =1,3,5,7,9, 11) stoichiometric CaCO for phosphor calculation3、Y2O3、Ga2O3、Sm2O3The required amount of the raw materials is accurately weighed by using an analytical balance, poured into an agate mortar, mixed and ground for 30 min.
(2) The ground sample was placed in a 5 mL alumina crucible, which was calcined in a muffle furnace at 1300 ℃ for 6 h.
(3) And (3) putting the sample obtained in the step (2) into an agate mortar for grinding for 30 min again.
CaYGaO4Doping with 1% of Sm3+The excitation spectrum of the obtained fluorescent powder is shown in figure 1; CaYGao4 Sm doped with x%3+The emission spectrum of the phosphor obtained after (x =1,3,5,7,9, 11) is shown in fig. 2; different Sm3+Doped CaYGao4The integrated intensity plot of the orange emission at 550-750 nm is shown in FIG. 3; CaYGao4:1%Sm3+The CIE coordinate diagram of (a) is shown in fig. 4, and is the orange emission with coordinates (0.6049, 0.3945). As can be seen from FIG. 1, in CaYGaO4Doping with 1% of Sm3+When the ultraviolet light is excited, the excitation spectrum peak is excited by a broadband of 300 nm-480 nm, which shows that the ultraviolet light can be well excited by a near ultraviolet chip and a blue chip, wherein the highest excitation peak is 404nm and is originated from Sm3+Is/are as follows6H5/2→6F7/2And (4) transition. 6 Sm with different concentrations3+The emission spectrum of the doped phosphor at 404nm excitation is shown in FIG. 2, where the emission at 564 nm is from Sm3+Is4G5/2→6H5/2Transition, 606 nm emission from Sm3+Is/are as follows4G5/2→6H7/2Transition, 647 nm emission from Sm3+Is/are as follows4G5/2→6H9/2Transition, 712 nm emission from Sm3+Is/are as follows4G5/2→6H11/2And (4) transition. As can be seen from FIG. 3, Sm was doped to 1%3+When the metal oxide is used, the emission intensity is highest at 550-750 nm, so that 1% of Sm is doped3+Is best at the momentAnd (4) doping is preferred.
Example 2
Preparation of CaYGaO4:3%Bi3+,1%Sm3+The fluorescent powder comprises the following steps:
(1) according to CaYGaO4:3%Bi3+,1%Sm3+CaCO calculation of stoichiometric ratio of phosphor3、Y2O3、Ga2O3、Sm2O3、Bi2O3The required amount of the raw materials is accurately weighed by using an analytical balance, poured into an agate mortar, mixed and ground for 30 min.
(2) The ground sample was placed in a 5 mL alumina crucible, which was calcined in a muffle furnace at 1300 ℃ for 6 h.
(3) And (3) putting the sample obtained in the step (2) into an agate mortar for grinding for 30 min again.
The emission spectrum of the obtained phosphor is shown in FIG. 5. The CIE diagram is shown in fig. 6, and is a blue emission with coordinates (0.2062, 0.122). As can be seen from FIG. 5, at Sm3+And Bi3+Bi with the emission spectrum of 350-550 nm under the optimal excitation of 315nm after co-doping3+Emission of (A) and Sm 550 to 750nm3+Is transmitted.
Example 3
Preparation of CaYGaO4:7%Bi3+,1%Sm3+The fluorescent powder comprises the following steps:
(1) according to CaYGaO4:7%Bi3+,1%Sm3+CaCO calculation of stoichiometric ratio of phosphor3、Y2O3、Ga2O3、Sm2O3、Bi2O3The required amount of the raw materials is accurately weighed by using an analytical balance, poured into an agate mortar, mixed and ground for 30 min.
(2) The ground sample was placed in a 5 mL alumina crucible, which was calcined in a muffle furnace at 1300 ℃ for 6 h.
(3) And (3) putting the sample obtained in the step (2) into an agate mortar for grinding for 30 min again.
The emission spectrum of the obtained phosphor at 315nm is shown in FIG. 7. CaYGaO4Doping with 1% of Sm3+,7%Bi3+The excitation spectra at 604nm and 445nm are shown in FIG. 8. The CIE diagram is shown in fig. 9, and is white light emission with coordinates (0.2572, 0.1824). As can be seen from FIG. 8, in the co-doping of Bi3+Sm at rear 604nm3+The excitation spectrum peak of the crystal is changed into Bi at 445nm3+Bi similar to the excitation pattern of3+The highest excitation peak is positioned at 315nm, and Bi is shown3+Emitter and Sm3+There is an energy transfer effect.
Comparative example 1
Preparation of CaYGaO4:7%Bi3+The fluorescent powder comprises the following steps:
(1) according to CaYGaO4:7%Bi3+CaCO calculation of stoichiometric ratio of phosphor3、Y2O3、Ga2O3、Bi2O3The required amount of the raw materials is accurately weighed by using an analytical balance, poured into an agate mortar, mixed and ground for 30 min.
(2) The ground sample was placed in a 5 mL alumina crucible, which was calcined in a muffle furnace at 1300 ℃ for 6 h.
(3) And (3) putting the sample obtained in the step (2) into an agate mortar for grinding for 30 min again.
In CaYGao4Doping with 7% Bi3+And then, excitation of a broadband with an excitation spectrum peak of 280 nm-410 nm shows that the blue light can be well excited by the near ultraviolet chip, wherein the highest excitation peak is 328nm, and the emission peak under the excitation of 328nm is broadband blue light emission of 350-650 nm. CaYGao4Doping with 7% Bi3+Emission spectrum at 328nm excitation see FIG. 10, CaYGaO4Doping with 7% Bi3+The excitation spectrum of the emission at 442 nm is shown in FIG. 11.
FIG. 12 shows CaYGaO4Doping with 7% Bi3+Emission spectrum of 328nm excitation with 1% of Sm3+The obtained fluorescent powder has an excitation spectrogram normalized contrast diagram under 604nm emission, and the doped Bi can be seen from the graph in FIG. 123+Emission spectrum peak and doping Sm3+Has good overlapping of excitation spectrum peaksDescription in doping Sm3+When Bi is doped in the alloy3+To strengthen Sm3+Emission of (B), Bi3+And Sm3+There is an energy transfer between the ions.
Comparative example 2
Preparation of CaYGaO4:y%Bi3+(y =5 or 9), 1% Sm3+The fluorescent powder comprises the following steps:
(1) according to CaYGaO4:y%Bi3+(y =5 or 9), 1% Sm3+CaCO calculation of stoichiometric ratio of phosphor3、Y2O3、Ga2O3、Sm2O3、Bi2O3The required amount of the raw materials is accurately weighed by an analytical balance, poured into an agate mortar, mixed and ground for 30 min.
(2) The ground sample was placed in a 5 mL alumina crucible, which was calcined in a muffle furnace at 1300 ℃ for 6 h.
(3) And (3) putting the sample obtained in the step (2) into an agate mortar for grinding for 30 min again.
CaYGaO4Doping with 1% of Sm3+,5%Bi3+Emission spectra at 315nm excitation see FIG. 13, CaYGaO4Doping with 1% of Sm3+,5%Bi3+The latter CIE diagram is shown in fig. 14.
CaYGaO4Doping with 1% of Sm3+,9%Bi3+Emission spectrum at 315nm excitation see FIG. 15, CaYGaO4Doping with 1% of Sm3+,9%Bi3+The latter CIE diagram is shown in fig. 16.
CaYGaO4Doping with 1% of Sm3+,y%Bi3+Bi excited at (y =3,5,7, 9) 315nm3+Variation in emission intensity see FIG. 17, CaYGaO4Doping with 1% of Sm3+,y%Bi3+Sm excited at (y =3,5,7, 9) 315nm3+The emission intensity changes are shown in FIG. 18, from which it can be seen that Bi is co-doped with Bi3+Increase in concentration of Bi3+Sm decreases with increasing y3+Increases first with increasing y, reaches a peak when y =7, and then decreases.
It should be noted that the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and although the present invention has been described in detail by the above preferred embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the present invention.
Claims (7)
1. The fluorescent powder for white light emitting diode is characterized in that the matrix of the fluorescent powder is CaYGaO4The activating ion comprises Sm3+Wherein Sm3+In CaYGaO4The mole fraction of the medium doping is 1-11%.
2. A phosphor as claimed in claim 1, wherein the active ions further comprise Bi3+,Bi3+In CaYGao4:1% Sm3+The mole fraction of the medium doping is 3-7%.
3. The phosphor of claim 2, wherein Sm is selected from the group consisting of3+In CaYGao4The mole fraction of the medium doping is 1 percent, and the Bi is3+In CaYGao4The mole fraction of the medium doping is 3% or 7%.
4. The phosphor for white light emitting diode of claim 3, wherein Bi is added3+In CaYGao4When the doping mole fraction is 3%, exciting light of the fluorescent powder is near ultraviolet light of 315nm, and blue light of 350-750 nm is emitted; when Bi is present3+In CaYGao4When the medium doping mole fraction is 7%, the exciting light of the fluorescent powder is near ultraviolet light with the wavelength of 315nm, and the emitted light is white light with the wavelength of 350-750 nm.
5. The method for synthesizing phosphor powder for white light emitting diode of claim 2, wherein the steps are as follows:
step one, according to each fluorescent powderCalculating the molar ratio of the components3、Y2O3、Ga2O3、Sm2O3、Bi2O3Weighing, pouring the weighed materials into a container, mixing and grinding for 15-30 min;
placing the ground sample in an alumina crucible, and placing the crucible in a muffle furnace to calcine for 5-6 h at 1200-1300 ℃;
and step three, putting the sample obtained in the step two into a container, and grinding for 15-30 min again.
6. The method as claimed in claim 5, wherein the container in the first step and the third step is agate mortar.
7. Use of a phosphor according to claim 1 for white light emitting diodes in the manufacture of pc-WLEDs devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210257499.9A CN114574206B (en) | 2022-03-16 | 2022-03-16 | Fluorescent powder for white light-emitting diode and synthesis method and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210257499.9A CN114574206B (en) | 2022-03-16 | 2022-03-16 | Fluorescent powder for white light-emitting diode and synthesis method and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114574206A true CN114574206A (en) | 2022-06-03 |
CN114574206B CN114574206B (en) | 2023-08-11 |
Family
ID=81781475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210257499.9A Active CN114574206B (en) | 2022-03-16 | 2022-03-16 | Fluorescent powder for white light-emitting diode and synthesis method and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114574206B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115785955A (en) * | 2022-12-09 | 2023-03-14 | 山东省科学院新材料研究所 | Bi 3+ Ion-doped full-spectrum white light fluorescent material and preparation and application thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105778904A (en) * | 2016-05-16 | 2016-07-20 | 合肥工业大学 | Aluminum gallate-based fluorescent material and preparation method thereof |
CN111057545A (en) * | 2019-12-30 | 2020-04-24 | 五邑大学 | Bismuth-doped gallate blue fluorescent powder and preparation method thereof |
-
2022
- 2022-03-16 CN CN202210257499.9A patent/CN114574206B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105778904A (en) * | 2016-05-16 | 2016-07-20 | 合肥工业大学 | Aluminum gallate-based fluorescent material and preparation method thereof |
CN111057545A (en) * | 2019-12-30 | 2020-04-24 | 五邑大学 | Bismuth-doped gallate blue fluorescent powder and preparation method thereof |
Non-Patent Citations (2)
Title |
---|
STEPHANIE M. ARAIZA等: "CaYGaO4 olivine-based green and red downconversion phosphors", vol. 216, pages 116747 * |
郑升辉,等: "Sm3+掺杂对SrLaGa3O7自身长余辉发光性质的影响", vol. 39, no. 3, pages 287 - 292 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115785955A (en) * | 2022-12-09 | 2023-03-14 | 山东省科学院新材料研究所 | Bi 3+ Ion-doped full-spectrum white light fluorescent material and preparation and application thereof |
CN115785955B (en) * | 2022-12-09 | 2024-01-05 | 山东省科学院新材料研究所 | Bi (Bi) 3+ Ion doped full spectrum white light fluorescent material and preparation and application thereof |
Also Published As
Publication number | Publication date |
---|---|
CN114574206B (en) | 2023-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100774028B1 (en) | Fluorescent Substance, Method of Manufacturing Fluorescent Substance, and Light Emitting Device Using the Fluorescent Substance | |
KR100911001B1 (en) | A novel phosphor for white light-emitting diodes and fabrication of the same | |
KR101088996B1 (en) | Silicon-containing phosphor for led, its preparation and the light emitting devices using the same | |
JP2012500313A (en) | Alpha-sialon phosphor | |
TWI405838B (en) | Red light fluorescent material and manufacturing method thereof, and white light luminescent device | |
CN113249125B (en) | Ce 3+ Doped silicate-based green fluorescent powder and preparation method and application thereof | |
CN101724401A (en) | Red luminous silicon-oxygen nitride fluorescent material, preparation method and light emitting device using same | |
KR101717241B1 (en) | Red light-emitting nitride material, and light-emitting part and light-emitting device comprising same | |
CN113201342A (en) | Ce3+Activated silicate broadband green fluorescent powder and preparation method and application thereof | |
CN113403074A (en) | Mn4+ activated antimonate narrow-band red fluorescent powder and preparation method thereof | |
US8865023B2 (en) | (HALO)silicate-based phosphor and manufacturing method of the same | |
CN111187622A (en) | Single-matrix phosphate fluorescent powder for white light LED and preparation method thereof | |
CN107722982A (en) | Silicon substrate nitrogen oxides hanced cyan fluorescent powder of Fluorescence Increasing and preparation method thereof | |
KR20090012082A (en) | A novel phosphor and fabrication of the same | |
CN114574206B (en) | Fluorescent powder for white light-emitting diode and synthesis method and application thereof | |
WO2016127843A1 (en) | Fluorescent material used for solid light source, manufacturing method therefor and composition containing same | |
CN106634997A (en) | Composite phosphate fluorophor and application thereof | |
CN112625683A (en) | Germanate type red fluorescent powder and preparation method thereof | |
CN107163943B (en) | Spectrum-adjustable fluorescent powder suitable for near ultraviolet excitation and preparation method thereof | |
CN107033903B (en) | Rare earth ion and transition metal ion doped single-matrix phosphate white fluorescent powder and preparation method thereof | |
CN115305088A (en) | Garnet structure-derived fluorescent powder material and preparation method and application thereof | |
CN114410302A (en) | Near-infrared fluorescent powder and optical device thereof | |
JP2013144794A (en) | Oxynitride-based phosphor and light-emitting device using the same | |
CN113621365B (en) | Preparation method of europium-doped red silicate fluorescent material with high luminous intensity | |
CN108130080B (en) | Ce3+Activated Ca7(PO4)2(SiO4)2Fluorescent powder and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |