CN114566597A - Interface modification method for improving environmental stability of perovskite solar cell - Google Patents
Interface modification method for improving environmental stability of perovskite solar cell Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention provides an interface modification method for improving the environmental stability of a perovskite solar cell, which comprises the following steps: cleaning an ITO conductive glass substrate; preparation of SnO on ITO conductive glass substrate2An electron transport layer; preparing a perovskite precursor solution; preparing a perovskite precursor solution on the electron transmission layer through a spin-coating method, and then annealing to prepare a perovskite light absorption layer; dissolving hexadecyl trimethyl ammonium hexafluorophosphate in isopropanol solution to prepare interface modifier precursor solution; spin-coating the interface modifier precursor solution on the surface of the perovskite film, and then annealing; preparing a hole transport layer on the perovskite thin film; and evaporating an electrode on the hole transport layer. According to the invention, the interface modification is carried out by introducing the pseudohalogen molecules and the long-chain organic cations with super-strong hydrophobicity, so that the surface defects of the perovskite film can be effectively reduced, the surface hydrophobicity of the film is improved, and the stability and the efficiency of the perovskite solar cell are enhanced。
Description
Technical Field
The invention relates to the field of solar cells, in particular to an interface modification method for improving the environmental stability of a perovskite solar cell.
Background
The realization of power generation by utilizing photovoltaic technology is one of the important ways of obtaining energy at present. With the increasing consumption of energy and the increasing awareness of protecting the ecological environment in the development of human society, the traditional fossil energy cannot meet the requirements of human development and environmental protection. Therefore, solar energy with renewable pollution-free will occupy an increasing proportion of the total energy structure. Especially, under the dominance of double carbon targets, the solar energy is utilized to generate electricity, which is undoubtedly a way for effectively reducing carbon emission. The development of efficient, stable and low-cost solar cells is the basis for the development of the photovoltaic industry.
The perovskite solar cell has the advantages of low processing cost, high light absorption coefficient, high photoelectric conversion efficiency, simple structure and the like, and is widely concerned and researched by scientific researchers. The efficiency of perovskite cells has increased from the first 3.8% to 25.7% in over 12 years, to a level comparable to commercial silicon solar cells. However, the commercial application of perovskite solar cells is mainly faced with lifetime challenges. Therefore, it is currently the biggest challenge to continue to develop methods for improving the stability of perovskite solar cells.
Interface modification is one of the simplest methods for improving the performance of the perovskite solar cell, and the interface modification method is still necessary for improving the stability of the perovskite solar cell, so that the interface modification method has important significance for future development.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an interface modification method for improving the environmental stability of the perovskite solar cell, and the interface modification method is characterized in that pseudohalogen molecules and long-chain organic cations with super-strong hydrophobicity are introduced for interface modification, so that the surface defects of the perovskite thin film can be effectively reduced, the surface hydrophobicity of the thin film is improved, and the stability and the efficiency of the perovskite solar cell are enhanced.
The invention adopts the following technical scheme to solve the technical problems:
an interface modification method for improving the environmental stability of a perovskite solar cell comprises the following steps:
(1) cleaning an ITO conductive glass substrate;
(2) preparation of SnO on ITO conductive glass substrate2An electron transport layer;
(3) preparing a perovskite precursor solution by using N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) as mixed solvents;
(4) preparing the perovskite precursor solution prepared in the step (3) on the electron transmission layer completed in the step (2) by a spin coating method, and then annealing at 150 ℃ for 15min to prepare a perovskite light absorption layer;
(5) dissolving hexadecyl trimethyl ammonium hexafluorophosphate in isopropanol solution to prepare interface modifier precursor solution;
(6) spin-coating the interface modifier precursor solution prepared in the step (5) on the surface of the perovskite thin film prepared in the step (4), and then annealing at 100 ℃ for 5 min;
(7) preparing a hole transport layer on the perovskite thin film after the step (6) is finished;
(8) and evaporating an electrode on the hole transport layer.
In a preferred embodiment of the present invention, in the step (1), the method for cleaning ITO conductive glass includes: putting the ITO glass into tap water containing a detergent, performing ultrasonic treatment for 15min, then sequentially performing ultrasonic treatment for 15min by using acetone, ethanol and ultrapure water respectively, and finally taking out and drying by using a hair dryer or an oven.
In a preferred mode of the invention, in the step (2), SnO is prepared on ITO conductive glass2The method of the electron transport layer is a spin coating method, and SnO used2The precursor solution specifically comprises 15% of SnO2The volume ratio of the colloidal aqueous solution to the ultrapure water is 1: 6 is configured.
As one of preferable modes of the present invention, in the step (3), N-dimethylformamide and dimethylsulfoxide are mixed in a volume ratio of 4: 1 mixing to obtain the mixed solvent; and when the perovskite precursor solution is specifically prepared: precursor solution composition according to (FAPbI)3)0.925(MAPbBr3)0.05(CsPbI3)0.025Prepared according to the proportion, the concentration is 1.6M, and FA in the solution is HC (NH)2)2 +MA is CH3NH3 +。
As one of the preferable modes of the present invention, in the step (4), the spin coating process is divided into two stages: the rotating speed of the first stage is 1000rpm/min, and the spin coating time is 10 s; the rotation speed of the second stage is 4000rpm/min, and the spin coating time is 30 s; wherein, when the second stage is carried out for 10-15 s, 100-150 mu L of chlorobenzene is dripped, and annealing treatment is carried out after the spin coating is finished.
In the step (5), as one preferable embodiment of the present invention, the desired interface modifier precursor solution is obtained by dissolving hexadecyltrimethylammonium hexafluorophosphate in an isopropanol solution at a concentration of 1mg/mL and heating at 40 ℃ to dissolve the hexadecyltrimethylammonium hexafluorophosphate.
As one preferable embodiment of the present invention, in the step (6), the spin coating process includes: the rotating speed is 3000rpm/min, the spin coating time is 20s, and 80 mu L of the solution is taken in each spin coating.
In the step (7), as one of the preferred modes of the present invention, the hole transport layer is made of Spiro-OMeTAD, which is first dissolved in chlorobenzene solution (75mg/mL) and added with tBP, Li salt and Co salt; the spin coating process comprises the following steps: the rotation speed is 3000rpm/min, and the spin coating time is 20 s.
In a preferred embodiment of the present invention, in the step (8), a gold electrode of 80 to 100nm is deposited on the upper surface of the hole transport layer.
In a preferred mode of the invention, the perovskite precursor solution is configured in a nitrogen glove box to complete the cleaning of the ITO glass, the preparation of the electron transport layer and the evaporation of the gold electrode in an air environment, and the preparation processes of the other perovskite solar cells are all completed in a dry air glove box.
Compared with the prior art, the invention has the advantages that:
the invention discloses an interface modification method for improving the environmental stability of a perovskite solar cell, which is characterized in that hexadecyl trimethyl ammonium hexafluorophosphate is introduced to the surface of the perovskite layer for interface modification; the hexafluorophosphate anions can compensate halogen vacancy defects on the surface of the perovskite thin film, reduce ion migration channels, effectively reduce interface defect states, enhance carrier extraction and reduce carrier ground recombination, thereby improving the photoelectric conversion efficiency of the perovskite solar cell; meanwhile, fluorine elements in the hexafluorophosphate radicals and hexadecyl trimethyl ammonium cations have very good hydrophobicity, the hydrophobicity of the surface of the perovskite film can be greatly improved, the erosion of water molecules to the film is prevented, and therefore the environmental stability of a battery device is effectively improved. The method has important value and guiding significance for the industrialization of the perovskite solar cell.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell modified by a hexadecyl trimethyl ammonium hexafluorophosphate interface according to embodiment 1 of the present invention;
FIG. 2 is a graph of current density versus voltage for a perovskite solar cell device modified with a hexadecyltrimethylammonium hexafluorophosphate interface of the present invention versus an unmodified device;
FIG. 3 is a scanning electron micrograph (SEM image) of an unmodified perovskite thin film of comparative example 1 of the present invention;
FIG. 4 is a Scanning Electron Micrograph (SEM) of a perovskite thin film which is modified by a hexadecyl trimethyl ammonium hexafluorophosphate interface in example 1 of the present invention;
FIG. 5 is a macroscopic picture of an unmodified perovskite thin film of comparative example 1 of the present invention after aging for 3 months under ambient conditions;
FIG. 6 is a macroscopic picture of the hexadecyltrimethylammonium hexafluorophosphate interfacial modified perovskite thin film of example 1 of the present invention after aging for 3 months under ambient conditions;
FIG. 7 is a comparison of XRD test results for an unmodified perovskite thin film of comparative example 1 of the present invention before and after 3 months of aging;
FIG. 8 is a comparison graph of XRD test results of the perovskite thin film interface-modified with hexadecyl trimethyl ammonium hexafluorophosphate of example 1 before and after 3 months of aging.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
Example 1
The interface-modified perovskite solar cell device of the embodiment has a structure that sequentially comprises from top to bottom: gold electrode (anode), hole transport layer (Spiro-OMeTAD), perovskite light absorption layer ((FAPbI)3)0.925(MAPbBr3)0.05(CsPbI3)0.025) Electron transport layer (SnO)2) And ITO conductive glass (cathode), in which hexadecyltrimethylammonium hexafluorophosphate is bonded to the side and upper surfaces of the perovskite light absorbing layer (see fig. 1).
The preparation method of the battery is simple and comprises the following steps:
(1) putting the ITO glass (with the size of 1.5cm multiplied by 2.0cm) into tap water containing a detergent, performing ultrasonic treatment for 15min, then performing ultrasonic treatment for 15min respectively by sequentially adopting acetone, ethanol and ultrapure water, and finally taking out and drying by adopting a hair drier or an oven (at 70 ℃) to obtain the cleaned ITO conductive glass.
(2) Carrying out UV treatment on the cleaned ITO conductive glass substrate for 30min to clean residual organic matters on the surface and reduce the surface energy, and then preparing SnO on the surface2An electron transport layer; wherein SnO2Preparation of electron transport layer using a catalyst composed of 15% SnO2The colloidal aqueous solution of (a) and ultrapure water were mixed in a ratio of 1: SnO with volume ratio of 62The precursor solution is prepared by spin coating, and the spin coating parameters are as follows: the rotating speed is 4000rpm/min, and the time is 50 s; finally, the obtained product is placed on a heating table at about 90 ℃ for annealing for 1 h.
(3) The volume ratio of N, N-Dimethylformamide (DMF) to dimethyl sulfoxide (DMSO) is 4: 1 as a mixed solvent to prepare a perovskite precursor solution; when the preparation is carried out specifically, firstly, the preparation is carried out according to (FAPBI)3)0.925(MAPbBr3)0.05(CsPbI3)0.0251.6M drug (wherein FA is HC (NH)2)2 +MA is CH3NH3 +) Then adding the mixed solvent into the mixture,the mixture was placed on a stirring table and dissolved for 1 hour at room temperature with stirring.
(4) Preparing the perovskite precursor liquid prepared in the step (3) on the electron transmission layer completed in the step (2) through a spin coating method, and then annealing at 150 ℃ for 15min to prepare a perovskite light absorption layer; the spin coating process is divided into two stages: the rotating speed of the first stage is 1000rpm/min, and the spin coating time is 10 s; the rotation speed of the second stage is 4000rpm/min, and the spin coating time is 30 s; wherein, when the second stage is carried out for 10-15 s, 100-150 mu L of chlorobenzene is dripped, and annealing treatment is carried out after the spin coating is finished.
(5) Preparing an interface modifier precursor solution by adopting an Isopropanol (IPA) solution; during the specific preparation, the hexadecyl trimethyl ammonium hexafluorophosphate is dissolved in IPA solution with the concentration of 1mg/mL, and is heated and dissolved at 40 ℃ to obtain the interface modifier precursor solution required by the target.
(6) Spin-coating the interface modifier precursor solution prepared in the step (5) on the surface of the perovskite thin film prepared in the step (4), and then annealing at 100 ℃ for 5 min; the spin coating process comprises the following steps: the rotating speed is 3000rpm/min, the spin coating time is 20s, and 80 mu L of precursor solution is taken for each spin coating.
(7) Preparing a hole transport layer precursor solution, dissolving Spiro-OMeTAD in chlorobenzene solution (75mg/mL), adding tBP, Li salt and Co salt, and spin-coating the precursor solution fully dissolved on the perovskite film to prepare a hole transport layer; the spin coating process comprises the following steps: the rotating speed is 3000rpm/min, the spin coating time is 20s, and 40 mu L of precursor solution is taken in each spin coating.
(8) And evaporating a gold electrode with the thickness of 80-100 nm on the Spiro-OMeTAD hole transport layer.
The perovskite precursor solution is prepared in a nitrogen glove box, ITO glass cleaning, electronic transmission layer preparation and gold evaporation plating electrodes are completed in an air environment, and the preparation processes of the other perovskite solar cells are completed in a dry air glove box.
In this embodiment, the interface of the hexadecyl trimethyl ammonium hexafluorophosphate is modified to obtain the perovskite solar cell device.
Comparative example 1
The interface of the perovskite solar cell device of the embodiment is not modified, and the structure is from top to bottomThe following sequentially include: gold electrode (anode), hole transport layer (Spiro-OMeTAD), perovskite light absorption layer ((FAPbI)3)0.925(MAPbBr3)0.05(CsPbI3)0.025) Electron transport layer (SnO)2) And ITO conductive glass (cathode).
The preparation method of the battery comprises the following steps:
(1) putting the ITO glass (with the size of 1.5cm multiplied by 2.0cm) into tap water containing a detergent, performing ultrasonic treatment for 15min, then performing ultrasonic treatment for 15min respectively by sequentially adopting acetone, ethanol and ultrapure water, and finally taking out and drying by adopting a hair drier or an oven (at 70 ℃) to obtain the cleaned ITO conductive glass.
(2) Carrying out UV treatment on the cleaned ITO conductive glass substrate for 30min to clean residual organic matters on the surface and reduce the surface energy, and then preparing SnO on the surface2An electron transport layer; wherein SnO2Preparation of electron transport layer using a catalyst composed of 15% SnO2The colloidal aqueous solution of (a) and ultrapure water were mixed in a ratio of 1: SnO with volume ratio of 62The precursor solution is prepared by spin coating, and the spin coating parameters are as follows: the rotating speed is 4000rpm/min, and the time is 50 s; finally, the obtained product is placed on a heating table at about 90 ℃ for annealing for 1 h.
(3) The volume ratio of N, N-Dimethylformamide (DMF) to dimethyl sulfoxide (DMSO) is 4: 1 as a mixed solvent to prepare a perovskite precursor solution; when the composition is specifically prepared, firstly (FAPbI) is adopted3)0.925(MAPbBr3)0.05(CsPbI3)0.0251.6M drug (wherein FA is HC (NH)2)2 +MA is CH3NH3 +) Then, the mixed solvent was added thereto, and the mixture was stirred and dissolved at room temperature for 1 hour.
(4) Preparing the perovskite precursor liquid prepared in the step (3) on the electron transmission layer completed in the step (2) through a spin coating method, and then annealing at 150 ℃ for 15min to prepare a perovskite light absorption layer; the spin coating process is divided into two stages: the rotating speed of the first stage is 1000rpm/min, and the spin coating time is 10 s; the rotation speed of the second stage is 4000rpm/min, and the spin coating time is 30 s; wherein, when the second stage is carried out for 10-15 s, 100-150 mu L of chlorobenzene is dripped, and annealing treatment is carried out after the spin coating is finished.
(5) Preparing a hole transport layer precursor solution, dissolving Spiro-OMeTAD in chlorobenzene solution (75mg/mL), adding tBP, Li salt and Co salt, and spin-coating the precursor solution fully dissolved on the perovskite film to prepare a hole transport layer; the spin coating process comprises the following steps: the rotating speed is 3000rpm/min, the spin coating time is 20s, and 40 mu L of precursor solution is taken in each spin coating.
(6) Evaporating a gold electrode of 80-100 nm on the cyclone-OMeTAD hole transport layer, wherein the area of the cell is 0.09cm2。
The perovskite precursor solution is prepared in a nitrogen glove box, ITO glass cleaning, electronic transmission layer preparation and gold evaporation plating electrodes are completed in an air environment, and the preparation processes of the other perovskite solar cells are completed in a dry air glove box.
In the comparative example, the perovskite solar cell device with an unmodified interface is finally obtained through the steps.
The study results of the solar cell devices of example 1 and comparative example 1 of the present invention were analyzed:
test results of current, voltage, etc
The current density versus voltage relationship of the hexadecyltrimethylammonium hexafluorophosphate interfacial modified perovskite solar cell device of example 1 and the unmodified device of comparative example 1 is shown in fig. 2, with the corresponding parameters shown in table 1.
TABLE 1 comparison of current, voltage, etc. parameters of modified and unmodified devices
As can be seen from Table 1 and FIG. 2, the open circuit voltage of the modified perovskite solar cell was increased from 1.12V to 1.13V, and the short circuit current was increased from 23.39mA/cm2Increased to 24.61mA/cm2The filling factor is improved from 71.99 to 80.56, and the corresponding photoelectric conversion efficiency is also improved from 18.8% to 22.3%.
Second, the scanning result of the electron microscope
The scanning electron microscope results of the surface of the unmodified perovskite thin film of the comparative example 1 are shown in fig. 3, and the scanning electron microscope results of the surface of the perovskite thin film modified by the hexadecyl trimethyl ammonium hexafluorophosphate interface of the example 1 are shown in fig. 4.
As can be seen from FIG. 3, the unmodified perovskite thin film has a uniform and compact appearance and no macroscopic defects.
As can be seen from FIG. 4, the perovskite thin film modified by the hexadecyl trimethyl ammonium hexafluorophosphate interface has uniform and compact appearance and no macroscopic defect, and granular modifiers and a small amount of small particles exist on the surface of the thin film. From this, it was found that hexadecyltrimethylammonium hexafluorophosphate was successfully attached to the surface of the perovskite thin film.
Third, environmental stability test results
The unmodified perovskite thin film of comparative example 1 and the perovskite thin film of example 1 modified by the hexadecyltrimethylammonium hexafluorophosphate interface were simultaneously placed in the same ambient atmosphere for 3 months, and the appearance of the thin films was observed to change during the observation. Wherein, the appearance of the perovskite thin film without modification after being placed in the environment atmosphere for 3 months is shown in figure 5, and the appearance of the perovskite thin film modified by hexadecyl trimethyl ammonium hexafluorophosphate after being placed in the environment atmosphere for 3 months is shown in figure 6.
As can be seen from fig. 5, the color of the unmodified perovskite thin film is significantly changed after being placed in the ambient atmosphere for 3 months, and the perovskite thin film is almost completely decomposed, leaving yellow lead iodide.
As can be seen from fig. 6, after the perovskite thin film modified with hexadecyltrimethylammonium hexafluorophosphate was left in the ambient atmosphere for 3 months, the thin film remained black and no significant decomposition was observed. From this, it is found that the perovskite thin film after modification has better environmental stability than the perovskite thin film without modification.
In addition, XRD test results before and after leaving unmodified and hexadecyltrimethylammonium hexafluorophosphate interface-modified perovskites thin while being placed in an ambient atmosphere for 3 months are shown in fig. 7 and 8, respectively.
As can be seen from fig. 7 and 8, the unmodified perovskite thin film and the modified perovskite thin film have the same phase structure at the beginning (day 0), and after 3 months of aging, the unmodified perovskite thin film has obvious delta phase (phase after perovskite decomposition) and lead iodide, while the alpha phase with the function of absorbing light has been degraded to a very low level, but the modified perovskite thin film can still maintain the phase structure almost consistent with that at day 0, the alpha phase is naturally high, and only a small amount of delta phase and lead iodide is present, which fully indicates that the hexadecyltrimethylammonium hexafluorophosphate modified perovskite thin film can significantly improve the environmental stability of the thin film.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An interface modification method for improving the environmental stability of a perovskite solar cell is characterized by comprising the following steps:
(1) cleaning an ITO conductive glass substrate;
(2) preparation of SnO on ITO conductive glass substrate2An electron transport layer;
(3) preparing a perovskite precursor solution by using N, N-dimethylformamide and dimethyl sulfoxide as a mixed solvent;
(4) preparing the perovskite precursor solution prepared in the step (3) on the electron transmission layer completed in the step (2) by a spin coating method, and then annealing at 150 ℃ for 15min to prepare a perovskite light absorption layer;
(5) dissolving hexadecyl trimethyl ammonium hexafluorophosphate in isopropanol solution to prepare interface modifier precursor solution;
(6) spin-coating the interface modifier precursor solution prepared in the step (5) on the surface of the perovskite thin film prepared in the step (4), and then annealing at 100 ℃ for 5 min;
(7) preparing a hole transport layer on the perovskite thin film after the step (6) is finished;
(8) and evaporating an electrode on the hole transport layer.
2. The interface modification method for improving the environmental stability of the perovskite solar cell according to claim 1, wherein in the step (1), the method for cleaning the ITO conductive glass comprises the following steps: putting the ITO glass into tap water containing a detergent, performing ultrasonic treatment for 15min, then sequentially performing ultrasonic treatment for 15min by using acetone, ethanol and ultrapure water respectively, and finally taking out and drying by using a hair dryer or an oven.
3. The interface modification method for improving the environmental stability of the perovskite solar cell as claimed in claim 1, wherein in the step (2), SnO is prepared on ITO conductive glass2The method of the electron transport layer is a spin coating method, and SnO used2The precursor solution specifically comprises 15% of SnO2The volume ratio of the colloidal aqueous solution to the ultrapure water is 1: 6 is configured.
4. The interface modification method for improving the environmental stability of the perovskite solar cell according to claim 1, wherein in the step (3), the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide is 4: 1, mixing to obtain the mixed solvent; specifically, when the perovskite precursor solution is prepared: the precursor liquid component is according to (FAPBI)3)0.925(MAPbBr3)0.05(CsPbI3)0.025Prepared according to the proportion, the concentration is 1.6M, and FA in the solution is HC (NH)2)2 +MA is CH3NH3 +。
5. The interface modification method for improving the environmental stability of the perovskite solar cell as claimed in claim 1, wherein in the step (4), the spin coating process is divided into two stages: the rotating speed of the first stage is 1000rpm/min, and the spin coating time is 10 s; the rotation speed of the second stage is 4000rpm/min, and the spin coating time is 30 s; wherein, when the second stage is carried out for 10-15 s, 100-150 mu L of chlorobenzene is dripped, and annealing treatment is carried out after the spin coating is finished.
6. The interface modification method for improving the environmental stability of the perovskite solar cell as claimed in claim 1, wherein in the step (5), the hexadecyl trimethyl ammonium hexafluorophosphate is dissolved in isopropanol solution with the concentration of 1mg/mL, and is heated and dissolved at 40 ℃ to obtain the interface modifier precursor solution required by the target.
7. The interface modification method for improving the environmental stability of the perovskite solar cell according to claim 1, wherein in the step (6), the spin coating process comprises: the rotating speed is 3000rpm/min, the spin coating time is 20s, and 80 mu L of the solution is taken in each spin coating.
8. The interface modification method for improving the environmental stability of the perovskite solar cell according to claim 1, wherein in the step (7), the hole transport layer is selected from Spiro-OMeTAD, the Spiro-OMeTAD is firstly dissolved in chlorobenzene solution, and tBP, Li salt and Co salt are added; the spin coating process comprises the following steps: the rotation speed is 3000rpm/min, and the spin coating time is 20 s.
9. The interface modification method for improving the environmental stability of a perovskite solar cell according to claim 1, wherein in the step (8), a gold electrode of 80 to 100nm is deposited on the upper surface of the hole transport layer.
10. The interface modification method for improving the environmental stability of the perovskite solar cell according to any one of claims 1 to 9, wherein the step (3) is performed in a nitrogen glove box, and the steps (4) to (7) are performed in a dry air glove box.
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| CN116507139B (en) * | 2023-06-30 | 2023-10-20 | 长江三峡集团实业发展(北京)有限公司 | Long-branched chain alkyl ammonium modified formamidine perovskite solar cell and preparation method thereof |
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