CN114559369B - Limiting bonding die for back thinning of infrared detector - Google Patents
Limiting bonding die for back thinning of infrared detector Download PDFInfo
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- CN114559369B CN114559369B CN202210123248.1A CN202210123248A CN114559369B CN 114559369 B CN114559369 B CN 114559369B CN 202210123248 A CN202210123248 A CN 202210123248A CN 114559369 B CN114559369 B CN 114559369B
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- layer
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- infrared detector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a limiting bonding die for thinning the back of an infrared detector, which comprises a limiting layer and a heat conducting layer; the heat conduction layer is in a round platform structure, a target pattern is arranged on the upper surface of the round platform structure, and the diameter of a protruding part of the round platform structure is matched with the inner diameter of the limiting layer; the limiting layer is sleeved on the round platform structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the round platform structure, and the depth of the groove structure is smaller than the thickness of a light-transmitting plate arranged in the groove structure; the diameter of the light-transmitting plate is matched with that of the groove structure, and the light-transmitting plate is used for providing an adhesion position for the infrared detector chip based on the target pattern. The limiting bonding die is simple in raw materials, convenient to manufacture, capable of flexibly replacing the heat conducting layers according to the required arrangement mode, wide in application range, high in stability, reusable and low in cost.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to a limiting bonding die for back thinning of an infrared detector.
Background
The infrared focal plane detector is a core part of an infrared system, has the remarkable advantages of high sensitivity, spectrum response wave Duan Kuan, strong anti-interference capability and the like, and is widely applied to the fields of space remote sensing, industry and agriculture, astronomical detection and the like.
The infrared detector adopts a hybrid structure and is generally composed of a photosensitive element chip, a silicon reading circuit and an indium column array positioned between the photosensitive element chip and the silicon reading circuit. In order to improve the reliability of the indium columns, underfill is generally filled between the chip and the readout circuitry, and temperature-raising curing is performed. The detector chip with the structure irradiates the photosensitive element in a back incidence mode, so that the back of the detector chip is required to be thinned by using a polishing technology, and the back transmittance of the back-illuminated infrared detector is improved, so that the quantum efficiency is improved. The repeated stability of the back thinning technology of the infrared focal plane detector is related to the core factors such as device performance, response rate, reliability and the like.
At present, the bonding process of the back thinning technology generally uses materials of the same chip type as accompanying sheets, cuts the accompanying sheets into proper specifications, matches the specifications according to the thickness and the specifications of the detector, uses wax to bond on the same glass plate for protection, and has no requirement of fixing and unifying the bonding quantity and the bonding position. The problem that the bonding position cannot be accurately controlled exists in the mode, the problem that the thickness of a chip is uneven in the later polishing process can be caused, and even the performance of a device can be affected.
Disclosure of Invention
The embodiment of the invention provides a limit bonding die for thinning the back of an infrared detector, which is used for solving the problems of poor surface flatness and flatness, poor polishing effect and low yield caused by incapability of accurately controlling the position during bonding of an infrared detector chip.
The embodiment of the application provides a limiting bonding die for thinning the back of an infrared detector, which comprises a limiting layer and a heat conducting layer;
the heat conduction layer is in a round platform structure, a target pattern is arranged on the upper surface of the round platform structure, and the diameter of a protruding part of the round platform structure is matched with the inner diameter of the limiting layer;
the limiting layer is sleeved on the round platform structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the round platform structure, and the depth of the groove structure is smaller than the thickness of a light-transmitting plate arranged in the groove structure;
the diameter of the light-transmitting plate is matched with that of the groove structure, and the light-transmitting plate is used for providing an adhesion position for the infrared detector chip based on the target pattern.
In some embodiments, the spacing layer has an inner diameter dimension that is 0.1mm to 0.2mm greater than the diameter of the glass sheet and an outer diameter dimension that is 1mm to 1.5mm greater than the inner diameter dimension.
In some embodiments, the diameter of the bottom of the thermally conductive layer is the same as the outer diameter of the stopper layer.
In some embodiments, the limiting layer is made of glass, precious stone chips, ceramics or acrylic materials.
In some embodiments, the light-transmitting panel is made of a glass material.
In some embodiments, the thermally conductive layer is made of copper, aluminum, or an aluminum alloy material.
In some embodiments, the target pattern is determined based on the number of light-transmitting plates, the number of infrared detector chips bonded, and the bonding pattern.
According to the embodiment of the invention, the groove structure is formed by sleeving the heat conduction layer and the limiting layer, and the target pattern is arranged on the upper surface of the circular truncated cone structure, so that the infrared detector chip can be installed according to the target pattern through the light-transmitting plate embedded in the groove structure.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic cross-sectional view of a spacing bonding die of the present disclosure;
fig. 2 is a schematic top view of a heat conducting layer of a spacing bonding mold of the present disclosure;
fig. 3 is a schematic top view of a limiting layer of the limiting bonding mold of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The embodiment of the invention provides a limiting bonding die for thinning the back of an infrared detector, which is shown in fig. 1, 2 and 3 and comprises a limiting layer 1 and a heat conducting layer 2.
The heat conduction layer 1 is in a round platform structure, a target pattern is arranged on the upper surface of the round platform structure, and the diameter of the protruding portion 11 of the round platform structure is matched with the inner diameter of the limiting layer 2. I.e. the limiting layer 2 can be sleeved on the convex part 11 of the truncated cone structure.
The limiting layer 2 is sleeved on the circular truncated cone structure of the heat conducting layer, the outer diameter of the limiting layer 2 is matched with the diameter of the bottom of the heat conducting layer 1, a groove structure 21 is formed between the limiting layer 2 and the upper surface of the circular truncated cone structure, and the depth of the groove structure 21 is smaller than the thickness of the light-transmitting plate 3 placed in the groove structure. I.e. the total height of the nested parts of the heat conducting layer 1 and the stopper layer 2, together with the thickness of the light-transmitting plate 3 placed above the heat conducting layer 1 is larger than the height of the stopper layer 2, so that the light-transmitting plate 3 can protrude from the groove structure 21.
The diameter of the light-transmitting plate 3 is matched with that of the groove structure 21, and the light-transmitting plate 3 is used for providing an adhesion position for the infrared detector chip based on the target pattern.
In some embodiments, the target pattern is determined based on the number of light-transmitting plates, the number of infrared detector chips bonded, and the bonding pattern. For example, the pattern of the contact surface between the convex part 11 of the truncated cone structure and the transparent plate can be formed according to the bonding quantity of the transparent plate and the infrared detector chips and the bonding mode, so that the bonding position of the infrared detector chips can be determined through the transparent plate, and a good limiting effect can be achieved through the limiting layer.
In some embodiments, the spacing layer has an inner diameter dimension that is 0.1mm to 0.2mm greater than the diameter of the glass sheet and an outer diameter dimension that is 1mm to 1.5mm greater than the inner diameter dimension. In some embodiments, the diameter of the bottom of the thermally conductive layer is the same as the outer diameter of the stopper layer. In some embodiments, the limiting layer is made of glass, precious stone chips, ceramics or acrylic materials. In some embodiments, the light-transmitting panel is made of a glass material. In some embodiments, the thermally conductive layer is made of copper, aluminum, or an aluminum alloy material.
As a specific application example, the implementation also provides a limiting bonding die for back thinning of the infrared detector, which is applied to a scene of back thinning bonding of an InSb infrared focal plane device of a 128×128 photosensitive element array. Comprises a limit layer and a heat conduction layer which are mutually nested. The top of the heat conducting layer is in direct contact with the bottom of the glass plate, the diameter of the top of the heat conducting layer is consistent with that of the glass plate, and the heat conducting layer is made of aluminum alloy. The limiting layer is a cylindrical through hole, the inner diameter size of the limiting layer is 0.1mm larger than that of the glass plate, so that the glass plate can be embedded into the limiting layer, the outer diameter size of the limiting layer is 1mm larger than that of the inner diameter size, and the limiting layer is made of acrylic.
The bottom diameter of the heat conducting layer and the outer diameter of the limiting layer in the example are kept consistent; the total height of the nested parts of the heat conducting layer and the limiting layer is larger than the height of the limiting layer together with the thickness of the glass plate arranged above the heat conducting layer; according to the bonding quantity and bonding modes of the glass plate and the infrared detector chip, a pattern of the contact surface of the infrared detector chip and the glass plate is designed on the heat conducting layer, and the infrared detector chip is aligned and bonded on the glass plate according to the pattern of the heat conducting layer.
As another specific application example, the method is applied to the situation of back thinning and bonding of the HgCdTe infrared focal plane device of 320×256 photosensitive element arrays. The heat conducting layer is characterized by comprising a limiting layer and a heat conducting layer, wherein the limiting layer and the heat conducting layer are mutually nested, the top of the heat conducting layer is directly contacted with the bottom of the glass plate, the diameter of the top of the heat conducting layer is consistent with that of the glass plate, and the heat conducting layer is made of aluminum alloy. The limiting layer is a cylindrical through hole, the inner diameter size of the limiting layer is 0.2mm larger than that of the glass plate, so that the glass plate can be embedded into the limiting layer, the outer diameter size of the limiting layer is 1.5mm larger than that of the limiting layer, and the limiting layer is made of ceramic; the bottom diameter of the heat conducting layer is consistent with the outer diameter of the limiting layer.
The total height of the nested parts of the heat conducting layer and the limiting layer is larger than the height of the limiting layer together with the thickness of the glass plate arranged above the heat conducting layer; according to the bonding quantity and bonding modes of the glass plate and the infrared detector chip, a pattern of the contact surface of the infrared detector chip and the glass plate is designed on the heat conducting layer, and the infrared detector chip is aligned and bonded on the glass plate according to the pattern of the heat conducting layer.
As yet another specific application example, the method is applied to the case of back thinning bonding of an InSb infrared focal plane device of a 1k×1k photosensor array. The heat conducting layer is characterized by comprising a limiting layer and a heat conducting layer, wherein the limiting layer and the heat conducting layer are mutually nested, the top of the heat conducting layer is directly contacted with the bottom of the glass plate, the diameter of the top of the heat conducting layer is consistent with that of the glass plate, and the heat conducting layer is made of aluminum alloy. The limiting layer is a cylindrical through hole, the inner diameter size of the limiting layer is 0.2mm larger than that of the glass plate, so that the glass plate can be embedded into the limiting layer, the outer diameter size of the limiting layer is 1mm larger than that of the limiting layer, and the limiting layer is made of precious stone. The bottom diameter of the heat conducting layer is consistent with the outer diameter of the limiting layer. The total height of the nesting portion of the thermally conductive layer and the spacing layer, together with the thickness of the glass sheet disposed over the thermally conductive layer, is greater than the height of the spacing layer.
According to the bonding quantity and bonding modes of the glass plate and the infrared detector chip, a pattern of the contact surface of the infrared detector chip and the glass plate is designed on the heat conducting layer, and the infrared detector chip is aligned and bonded on the glass plate according to the pattern of the heat conducting layer.
According to the embodiment of the invention, the groove structure is formed by sleeving the heat conduction layer and the limiting layer, and the target pattern is arranged on the upper surface of the circular truncated cone structure, so that the infrared detector chip can be installed according to the target pattern through the light-transmitting plate embedded in the groove structure.
It is noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (5)
1. The limiting bonding die for the back thinning of the infrared detector is characterized by comprising a limiting layer and a heat conducting layer;
the heat conduction layer is in a round table structure, a target pattern is arranged on the upper surface of the round table structure, the target pattern is determined according to the bonding quantity and the bonding mode of the light-transmitting plates and the infrared detector chips, and the diameter of the protruding part of the round table structure is matched with the inner diameter of the limiting layer;
the limiting layer is sleeved on the round platform structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the round platform structure, and the depth of the groove structure is smaller than the thickness of a light-transmitting plate arranged in the groove structure;
the diameter of the light-transmitting plate is matched with that of the groove structure, the light-transmitting plate is used for providing an adhesion position for the infrared detector chip based on the target pattern, and the light-transmitting plate is made of glass materials.
2. The infrared detector back-thinned spacing bonding die of claim 1, wherein the spacing layer has an inner diameter dimension that is 0.1mm-0.2mm greater than the diameter of the glass sheet and an outer diameter dimension that is 1mm-1.5mm greater than the inner diameter dimension.
3. The infrared detector back-thinned spacing bonding die of claim 1, wherein the diameter of the bottom of the thermally conductive layer is the same as the outer diameter of the spacing layer.
4. The infrared detector back-thinned spacing bonding mold of claim 1, wherein the spacing layer is made of glass, precious stone chips, ceramic or acrylic material.
5. The infrared detector back-thinned spacing bonding die as set forth in claim 1, wherein said thermally conductive layer is made of copper, aluminum or aluminum alloy material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210123248.1A CN114559369B (en) | 2022-02-10 | 2022-02-10 | Limiting bonding die for back thinning of infrared detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210123248.1A CN114559369B (en) | 2022-02-10 | 2022-02-10 | Limiting bonding die for back thinning of infrared detector |
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| CN114559369A CN114559369A (en) | 2022-05-31 |
| CN114559369B true CN114559369B (en) | 2023-06-23 |
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| CN115078431A (en) * | 2022-06-16 | 2022-09-20 | 中国核动力研究设计院 | Preparation method of transmission electron microscope sample based on zirconium alloy after self-ion irradiation |
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