CN114551735A - Quantum dot light-emitting diode, display device and light-emitting light source - Google Patents

Quantum dot light-emitting diode, display device and light-emitting light source Download PDF

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CN114551735A
CN114551735A CN202011298964.0A CN202011298964A CN114551735A CN 114551735 A CN114551735 A CN 114551735A CN 202011298964 A CN202011298964 A CN 202011298964A CN 114551735 A CN114551735 A CN 114551735A
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quantum dot
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phenanthroimidazole
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邓承雨
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TCL Technology Group Co Ltd
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    • H—ELECTRICITY
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract

The application relates to the technical field of display devices, in particular to a quantum dot light-emitting diode, a display device and a light-emitting light source. The quantum dot light-emitting diode comprises a quantum dot layer and a hole blocking layer adjacent to the quantum dot layer, wherein the hole blocking layer contains a phenanthroimidazole derivative. The phenanthroimidazole derivative not only has wide energy gap and excellent electrochemical and thermodynamic stability, but also has good hole and exciton blocking performance, can effectively limit holes or excitons in a quantum dot layer and prevent the holes or excitons from diffusing between the quantum dot layer and a cathode, so that the injection of the holes and electrons in a device is more balanced, the light-emitting efficiency of the excitons is increased, and the light-emitting performance of the device is improved.

Description

Quantum dot light-emitting diode, display device and light-emitting light source
Technical Field
The application belongs to the technical field of display devices, and particularly relates to a quantum dot light-emitting diode, a display device and a light-emitting source.
Background
It is known that in a Quantum dot Light-Emitting Diode (QLED) device, the injection balance of electrons and holes is critical to achieve high efficiency and long lifetime of the device. In a common QLED device structure, an electron transport material is generally well matched with a valence band of a quantum dot, so that the electron injection strength is far higher than the hole injection strength. This unbalanced electron and hole injection overcharges the quantum dots, causes nonradiative auger recombination, and induces exciton dissociation, and may even cause parasitic emission, which is detrimental to the efficiency, lifetime, and color purity of the device.
Currently, the energy band structure of an electron transport material such as zinc oxide can be adjusted by ion doping or interface modification, so that the balanced injection of holes and electrons of a QLED device is realized. For example, magnesium-doped zinc oxide zinc magnesium oxide nanoparticles, aluminum-doped zinc oxide zinc aluminum oxide nanoparticles, and the like are used as electron transport materials, but the doped zinc oxide obtained by using these doping methods may have unstable performance superior to or lower than that of the original zinc oxide, thereby affecting the stability of the QLED device product.
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The application aims to provide a quantum dot light-emitting diode, a display device and a light-emitting light source, and aims to solve the technical problem that holes and electrons of an existing quantum dot light-emitting diode device are unbalanced in injection.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides a quantum dot light emitting diode comprising a quantum dot layer and a hole blocking layer adjacent to the quantum dot layer, the hole blocking layer comprising a phenanthroimidazole derivative.
The quantum dot light-emitting diode provided by the application is characterized in that a quantum dot layer is adjacent to a hole blocking layer containing a phenanthroimidazole derivative, the phenanthroimidazole derivative not only has a wide energy gap and excellent electrochemical and thermodynamic stability, but also has good hole and exciton blocking performance, and can effectively limit holes or excitons in the quantum dot layer and prevent the holes or excitons from diffusing between the quantum dot layer and a cathode, so that the injection of the holes and electrons in a device is more balanced, the light-emitting efficiency of the excitons is increased, and the light-emitting performance of the device is improved.
In a second aspect, the present application provides a display device comprising the quantum dot light emitting diode described above.
The display device that this application provided includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode adjoins the hole barrier layer who contains phenanthroimidazole derivative at the quantum dot layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the display device that is provided with this quantum dot emitting diode like this has better display performance.
In a third aspect, the present application provides a luminescent light source comprising the quantum dot light emitting diode described above.
The utility model provides a luminescent light source includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode adjoins the hole barrier layer who contains phenanthroimidazole derivatives at the quantum dot layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the luminescent light source who is provided with this quantum dot emitting diode like this has better luminescent performance.
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In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 4 is a schematic diagram illustrating a hole-electron injection balance principle of a quantum dot light emitting diode according to an embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In a first aspect, the embodiments of the present application provide a quantum dot light emitting diode, as shown in fig. 1, including a quantum dot layer and a hole blocking layer adjacent to the quantum dot layer, where the hole blocking layer includes a phenanthroimidazole derivative.
The quantum dot light-emitting diode provided by the application is characterized in that a quantum dot layer is adjacent to a hole blocking layer containing a phenanthroimidazole derivative, the phenanthroimidazole derivative not only has a wide energy gap and excellent electrochemical and thermodynamic stability, but also has good hole and exciton blocking performance, and can effectively limit holes or excitons in the quantum dot layer and prevent the holes or excitons from diffusing between the quantum dot layer and a cathode, so that the injection of the holes and electrons in a device is more balanced, the light-emitting efficiency of the excitons is increased, and the light-emitting performance of the device is improved.
Specifically, the quantum dot light-emitting diode comprises an anode, and the hole blocking layer is arranged on one side, away from the anode, of the quantum dot layer. The hole blocking layer is a "passive blocking" or "protective blocking" in the present application, and is intended to maximally retain holes in the quantum dot layer, so as to form more excitons, unlike the existing active hole blocking (i.e. actively reducing or delaying the number or rate of hole injection).
In some embodiments, the phenanthroimidazole derivative in the hole blocking layer contains a pyridine substituent, a nitrogen atom in the pyridine group can coordinate with the material of the electron transport layer, and the nitrogen atom in the phenanthroimidazole can form a coordination bond with a metal element (such as cadmium element or zinc element) in the quantum dot, so that a channel for transporting electrons through the coordination bond is formed, and the electron transport is not hindered by the wide HOMO and LUMO energy levels of the hole blocking layer. Further preferably, the phenanthroimidazole derivative further contains a benzene substituent, so that electrons can be better transported. The pyridine substituted phenanthroimidazole derivative has an electron-deficient large rigid planar structure, can effectively prevent a hole from crossing a quantum dot layer to an electron transport layer to emit light, and avoids the phenomenon that the light-emitting color gamut of the quantum dots is impure.
Further, the phenanthroimidazole derivative is selected from the group consisting of 2- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 2- (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 1- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole and 1, 2-bis (3- (3-pyridine) phenyl) -1-phenyl-1H- [9, at least one of 10-d ] phenanthroimidazole, the structure of which is shown as follows:
Figure BDA0002786249850000041
in some embodiments, the hole blocking layer contains the phenanthroimidazole derivative, and may also contain other materials having a hole blocking function. In a preferred embodiment, the hole blocking layer is composed of the phenanthroimidazole derivative, and preferably, the thickness of the hole blocking layer is 5 to 20 nm.
In some embodiments, as shown in fig. 2, the quantum dot light emitting diode further comprises an electron transport layer, the hole blocking layer being located between the quantum dot layer and the electron transport layer. Preferably, the electron transport layer contains an N-type metal oxide and a multi-branched alkane bonded to the surface of the N-type metal oxide. Still preferably, the quantum dot light emitting diode further comprises a cathode, and the hole blocking layer and the electron transport layer are located between the quantum dot layer and the cathode. Specifically, the quantum dot light-emitting diode comprises a quantum dot layer and a hole blocking layer arranged on the side, away from an anode, of the quantum dot layer, wherein an electron transport layer is arranged between the hole blocking layer and a cathode, and the electron transport layer contains an N-type metal oxide and multi-branched alkane combined on the surface of the N-type metal oxide.
The ligand modification method is the preferred method for modifying the N-type metal oxide nanoparticles, and the modification method does not change the internal structure of N-type metal oxide particles, can regulate and control the speed of electron migration through the modification of external ligands, is in-situ modification and regulation without damage, and has high-efficiency experimental operability. The surface of N-type metal oxide particles on the electron transport layer is modified by using the multi-branched alkane, so that the property of the original electron transport layer is not influenced, and the electron mobility can be flexibly adjusted. The phenanthroimidazole derivative is in an electron-deficient large-rigidity conjugated planar structure, has a wide energy gap, excellent electrochemical and thermodynamic stability and also has good hole and exciton blocking properties, and the application utilizes the chemical and physical structural characteristics of pyridine substituted phenanthroimidazole derivative as a hole blocking layer, so that on one hand, nitrogen atoms in a pyridine group can form coordination with metal elements in N-type metal oxide nanoparticles through coordination bonds, and the potential barrier between the N-type metal oxide nanoparticles and a quantum dot layer can be reduced; meanwhile, nitrogen atoms in the phenanthroimidazole can form coordination bonds with metal elements in the quantum dots, so that a channel for transmitting electrons through the coordination bonds is formed, and the electron transmission cannot be hindered due to the wide HOMO and LUMO energy levels of the hole blocking layer. Meanwhile, the phenanthroimidazole derivative has an electron-deficient large rigid planar structure and can prevent a phenomenon that a hole crosses a quantum dot layer to emit light to an electron transport layer, so that the purity of the quantum dot light-emitting color gamut is improved.
Therefore, the quantum dot light-emitting diode can reserve holes and excitons to the quantum dot layer by the hole blocking layer, and can be modified by multi-branched alkane of the electron transport layer to flexibly adjust the electron mobility so as to achieve hole-electron injection balance, thereby improving the luminous efficiency of the device and relieving Auger recombination caused by electron accumulation in the quantum dot layer.
In some embodiments, the N-type metal oxide in the electron transport layer is selected from at least one of zinc oxide, zirconium dioxide, titanium dioxide, tin dioxide, and the like; preferably zinc oxide. The zinc oxide nano-particles have higher electron mobility, mue≈1.8×10-3cm2V · s, 1-3 orders of magnitude higher than the mobility of commonly used hole transport materials, which match well with the valence band of quantum dots. Meanwhile, the electron migration rate of the zinc oxide can be adjusted by modifying the multi-branched alkane, so that the injection of holes and electrons of the device is more balanced.
Further, the number of main chain carbon atoms in the multi-branched alkane is 5 to 15, and the number of branched chains is 3 to 13. Further, the multi-branched alkane is connected with hydroxyl and/or carboxyl, and the hydroxyl and/or carboxyl are combined on the surface of the N-type metal oxide, so that the combination stability of the multi-branched alkane can be further improved.
Further preferably, the multi-branched alkane is further connected with an electron-withdrawing group, and the electron migration rate can be adjusted according to the number of the electron-withdrawing groups and the electron-withdrawing capability. More preferably, the electron withdrawing group is selected from at least one of nitro, chloro, fluoro, bromo and iodo.
Further, a hole transport layer, or a hole injection layer and a hole transport layer which are stacked, is provided between the quantum dot layer and the anode. As shown in fig. 3, the quantum dot light emitting diode includes an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode, which are sequentially stacked.
For example, the anode is ITO, the hole injection layer is PEDOT, PSS, the electron transport layer is a multi-branched alkane modified zinc oxide layer, and the cathode is Al, as shown in fig. 4, the hole blocking layer retains the hole blocking to the quantum dot layer, and the electron transfer is blocked by the electron blocking layer, thereby achieving hole-electron injection balance. The multi-branched alkane is modified on the surface of the zinc oxide particles of the electron transport layer, so that the property of the original electron transport layer is not influenced, and the electron mobility can be flexibly adjusted, thereby synergistically achieving hole-electron injection balance.
Specifically, the preparation method of the quantum dot light-emitting diode comprises the following steps:
1. preparing an anode: taking the anode as Indium Tin Oxide (ITO) as an example, the cleaned ITO substrate is treated by ultraviolet ozone for a period of time so as to improve the surface work function and the hydrophilicity of the ITO substrate.
2. Preparing a hole injection layer: taking poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid) (PEDOT: PSS) as an example, a certain amount of PEDOT: PSS solution is dropped on an ITO substrate, spin-coated at 3500r/min and then annealed, and a PEDOT: PSS film is obtained as a hole injection layer. PEDOT PSS films range in thickness from 10 to 40nm, preferably 20 nm. The mass range of PEDOT to PSS is 1-3g, preferably 1.2 g.
3. Preparing a hole transport layer: and transferring the ITO substrate coated with the PEDOT PSS film into a glove box filled with argon atmosphere protection, and spin-coating a hole transport layer material at the rotating speed of 3500 r/min. Hole transport layer materials include, but are not limited to: poly [ bis (4-phenyl) (4-butylphenyl) amine ] solution (poly-TPD), N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine solution (NPB), N, N, N ', N' -tetraphenyl-2, 6-Naphthalenediamine (NDDP), 4- [1- [4- [ bis (4-methylphenyl) amino ] phenyl ] cyclohexyl ] -N- (3-methylphenyl) -N- (4-methylphenyl) aniline (TAPC). The thickness of the hole transport layer film is in the range of 20 to 50nm, preferably 25 nm. The mass of the hole transport material is in the range of 1.5 to 4g, preferably 3 g.
4. Preparing a quantum dot layer: the quantum dot materials of the quantum dot layer include, but are not limited to: II-VI, III-V and IV-VI quantum dots, all-inorganic perovskite quantum dots, organic-inorganic perovskite quantum dots, copper-sulfur-indium ternary quantum dots and silicon quantum dots; the quantum dot architecture includes, but is not limited to: the structure comprises a quantum dot homogeneous binary component mononuclear structure, a quantum dot homogeneous multi-component alloy component mononuclear structure, a quantum dot multi-component gradual change mononuclear structure, a quantum dot binary component discrete core-shell structure, a quantum dot multi-component alloy component discrete core-shell structure or a quantum dot multi-component alloy component gradual change core-shell structure; the core and shell compounds of the quantum dots are CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, ZnSeS, CdSeSTe or CdZnSeTe of II-VI groups, including but not limited to InP, InAs or InAsP of III-V groups, PbS, PbSe, PbSeS, PbSeTe or PbSTe of IV-VI groups. The quantum dot layer film thickness is in the range of 5-15nm, preferably 8 nm. The quantum dots have a mass of 0.2-1.0 g. Preferably 0.5 g.
5. Preparing a hole blocking layer: the pyridine substituted phenanthroimidazole derivatives described above are spin-coated as hole blocking layers and include, but are not limited to: 2- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 2- (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 1- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 1, 2-bis (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole. Solvents used include, but are not limited to: chlorobenzene, chloroform, o-dichlorobenzene. The hole-blocking layer film has a thickness in the range of 5 to 20nm, preferably 15 nm. The amount of the derivative substance of the pyridine-substituted phenanthroimidazole derivative is in the range of 0.2 to 1.5g, preferably 1.1 g.
6. Preparing an electron transport layer: spin-coating the electron transport material modified by the multi-branched alkane at the rotating speed of 4000 r/min. Electron transport materials include, but are not limited to: at least one of zinc oxide, zirconium dioxide, titanium dioxide, tin dioxide, etc., preferably zinc oxide. The mass of the modified electron injection layer is in the range of 0.1 to 2.0g, preferably 1.5 g. The multi-branched alkane is: the number of main chain carbon atoms is more than or equal to 15 and more than or equal to 5, and the number of branched chains is more than or equal to 13 and more than or equal to 3. The multi-branched alkane contains electron-withdrawing functional group species including but not limited to: nitro, fluoro, chloro, bromo, iodo; the number M of the electron-withdrawing functional groups is more than or equal to 3. The thickness of the electron transport layer film is in the range of 10 to 40nm, preferably 35 nm.
8. Preparing a cathode: taking aluminum as an example, aluminum electrodes are evaporated and packaged.
A second aspect of the embodiments of the present application provides a display device, where the display device includes the above-mentioned quantum dot light emitting diode of the present application.
The display device that this application provided includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode adjoins the hole barrier layer who contains phenanthroimidazole derivative at the quantum dot layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the display device that is provided with this quantum dot emitting diode like this has better display performance.
Further, the display device is a flat panel display.
A third aspect of the embodiments of the present application provides a luminescent light source, which includes the above-mentioned quantum dot light emitting diode of the present application.
The luminescent light source that this application provided includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode adjoins the hole barrier layer who contains phenanthroimidazole derivative at the quantum dot layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the luminescent light source that is provided with this quantum dot emitting diode like this has better luminous performance.
The following description will be given with reference to specific examples.
Example 1
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: the cleaned indium tin oxide substrate (ITO) is treated by ultraviolet ozone for 30 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: and spin-coating 1.0g of PEDOT/PSS solution on the ITO substrate at 3500r/min, and annealing to obtain a PEDOT/PSS film with the thickness of 10nm as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT/PSS film was transferred into a glove box protected by argon atmosphere, and a solution of 1.5g of N, N, N ', N' -tetraphenyl-2, 6-naphthalenediamine dissolved in chloroform was spin-coated at 3500r/min to obtain a hole transport layer having a film thickness of 20 nm.
(4) Preparing a quantum dot layer: and spin-coating 0.2g of CdSe @ ZnS quantum dots at a rotating speed of 2000r/min to obtain the quantum dot light-emitting layer with the film thickness of 6 nm.
(5) Preparing a hole blocking layer: 0.2g of 2- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole is spin-coated at 3000r/min to obtain a hole blocking layer with a film thickness of 7 nm.
(6) Preparing an electron transport layer: 0.3g of zinc oxide solution modified by 2,3, 4-tri (nitromethyl) pentane is used for preparing a zinc oxide layer as an electron transport layer at the rotating speed of 4000r/min, and the thickness of the zinc oxide layer is 10 nm.
(7) Preparing a cathode: and evaporating an upper aluminum electrode and packaging.
Example 2
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: the cleaned indium tin oxide substrate (ITO) is treated by ultraviolet ozone for 10 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: and 3g of PEDOT PSS solution is coated on the ITO substrate in a rotating speed of 3500r/min in a rotating mode, and then annealing is carried out, so that a PEDOT PSS film with the thickness of 40nm is obtained and is used as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT: PSS film was transferred into a glove box filled with argon atmosphere for protection, and 4.0g of poly [ bis (4-phenyl) (4-butylphenyl) amine ] solution (poly-TPD) was dissolved in chlorobenzene and spin-coated at 3500r/min to obtain a hole transport layer having a film thickness of 50 nm.
(4) Preparing a quantum dot layer: 0.5g of InAsP quantum dots are spin-coated at the rotating speed of 2000r/min to obtain a quantum dot layer with the film thickness of 15 nm.
(5) Preparing a hole blocking layer: 1.5g of 2- (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole was spin-coated at 3000r/min to obtain a hole-blocking layer having a film thickness of 20 nm.
(6) Preparing an electron transport layer: 2.0g of titanium dioxide solution modified with 2,3,4,5,6,7,8,9,10,11,12,13, 14-tridecyl (chloromethyl) pentadecane was used to prepare a titanium dioxide layer as an electron transport layer with a thickness of 40nm at a rotation speed of 4000 r/min.
(7) Preparing a cathode: and evaporating an upper aluminum electrode and packaging.
Example 3
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: the cleaned indium tin oxide substrate (ITO) is treated by ultraviolet ozone for 20 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: and spin-coating 1.2g of PEDOT/PSS solution on the ITO substrate at 3500r/min, and then annealing to obtain a PEDOT/PSS film with the thickness of 20nm as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT: PSS film was transferred to a glove box filled with argon atmosphere for protection, and 3.0g of 4- [1- [4- [ bis (4-methylphenyl) amino ] phenyl ] cyclohexyl ] -N- (3-methylphenyl) -N- (4-methylphenyl) aniline was dissolved in o-dichlorobenzene and spin-coated at 3500r/min to obtain a hole transport layer material having a film thickness of 25 nm.
(4) Preparing a quantum dot layer: 0.5g of CuInS quantum dots are spin-coated at the rotating speed of 2000r/min to obtain a quantum dot layer with the film thickness of 8 nm.
(5) Preparing a hole blocking layer: 1.1g of 1- (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole was spin-coated at 3000r/min to obtain a hole-blocking layer having a film thickness of 15 nm.
(6) Preparing an electron transport layer: 1.5g of zirconium dioxide solution modified with 2,3,5,6,7,8,10,11,13, 14-tridecane (iodoethyl) is used to prepare a zirconium dioxide layer as an electron transport layer with a thickness of 35nm at a rotation speed of 4000 r/min.
(7) Preparing a cathode: and evaporating an upper aluminum electrode and packaging.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A quantum dot light-emitting diode comprising a quantum dot layer and a hole blocking layer adjacent to the quantum dot layer, wherein the hole blocking layer contains a phenanthroimidazole derivative.
2. The quantum dot light-emitting diode of claim 1, wherein the phenanthroimidazole derivative contains a pyridine substituent,
preferably, the phenanthroimidazole derivative further contains a phenyl substituent.
3. The qd-led of claim 2, wherein the phenanthroimidazole derivative is selected from the group consisting of 2- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 2- (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole, 1- (4- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole and 1, 2-bis (3- (3-pyridine) phenyl) -1-phenyl-1H- [9,10-d ] phenanthroimidazole.
4. The quantum dot light-emitting diode of claim 1, wherein the hole blocking layer is composed of the phenanthroimidazole derivative,
preferably, the hole blocking layer has a thickness of 5 to 20 nm.
5. The quantum dot light emitting diode of any of claims 1-4, wherein the quantum dot light emitting diode further comprises an electron transport layer, the hole blocking layer being located between the quantum dot layer and the electron transport layer,
preferably, the electron transport layer contains an N-type metal oxide and a multi-branched alkane bonded to the surface of the N-type metal oxide,
still preferably, the quantum dot light emitting diode further comprises a cathode, and the hole blocking layer and the electron transport layer are located between the quantum dot layer and the cathode.
6. The quantum dot light-emitting diode of claim 5, wherein the N-type metal oxide is at least one selected from zinc oxide, zirconium dioxide, titanium dioxide, tin dioxide, and the like; and/or the presence of a gas in the gas,
in the multi-branched alkane, the number of main chain carbon atoms is 5-15, and the number of branched chains is 3-13.
7. The quantum dot light-emitting diode of claim 5, wherein the multi-branched alkane has a hydroxyl group and/or a carboxyl group attached thereto, the hydroxyl group and/or the carboxyl group being bound to the surface of the N-type metal oxide,
preferably, the multi-branched alkane is further connected with an electron withdrawing group,
more preferably, the electron withdrawing group is selected from at least one of nitro, chloro, fluoro, bromo and iodo.
8. A display device comprising a qd-led according to any one of claims 1 to 7.
9. The display device of claim 8, wherein the display device is a flat panel display.
10. A luminescent light source comprising a qd-led according to any one of claims 1 to 7.
CN202011298964.0A 2020-11-18 2020-11-18 Quantum dot light-emitting diode, display device and light-emitting light source Pending CN114551735A (en)

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EP3038181A1 (en) * 2014-12-22 2016-06-29 Solvay SA Organic electronic devices comprising acridine derivatives in an emissive layer free of heavy atom compounds
CN104817540B (en) * 2015-04-24 2017-09-26 华中科技大学 A kind of phenanthro- imdazole derivatives and its application
CN105322098B (en) * 2015-11-03 2018-06-19 Tcl集团股份有限公司 A kind of light emitting diode with quantum dots and preparation method for improving charge injection balance
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