CN114545537A - 一种超材料近红外宽带吸收器及其制备方法 - Google Patents
一种超材料近红外宽带吸收器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种超材料近红外宽带吸收器及其制备方法。所述超材料近红外宽带吸收器包括衬底以及自下而上依次覆盖于所述衬底上方的金属底层、中部介质层、金属微结构层以及顶部介质层,所述金属微结构层由多个金属微结构周期性阵列排布构成,结合金属底层和中部介质层,形成金属‑介质‑金属结构,金属图形表面形成局域表面等离子体共振,同时与金属底层、中部介质层之间形成磁谐振,在共振耦合的作用下,在1000~3000nm的波段实现了完美吸收,且顶部介质层的设置可有效地将倏逝波携带的能量限制在结构体内,减小结构的反射;金属微结构相对简单,可以实现大面积的制备,制作成本低廉,在对红外隐身、红外探测等领域的研究具有重要的参考价值。
Description
技术领域
本发明涉及红外吸收器技术领域,特别是涉及一种超材料近红外宽带吸收器及其制备方法。
背景技术
超材料是一种人工设计制造的具有周期性结构的复合材料,超材料吸收器是超材料领域的一个重要研究分支,在传感器、滤波器、红外隐身、光电探测、太阳能光伏等领域有着重要的应用。2008年,Landy等人首次在(《Physical Review Letters》,第100卷,第207402页)提出了一种由金属裂环谐振器和金属线组成的单频完美吸收器,在该结构中,通过谐振环和底层金属层产生的电磁共振与入射电磁波的耦合,在11.5GHz附近实现了99%的完美吸收。在此之后,根据Landy的设计理念,Tao等人(《Physical Review B》,第78卷,第241103页)通过改变单元结构形状和优化结构参数,再次在1.6THz处实现了吸收率为99.9%的近完美吸收。但是由于微纳加工技术的限制,吸收器的波段都停留在微波和太赫兹波段。2010年,Cui等人设计实现了一种近红外波段窄带吸收器(《NANO LETTERS》,第10卷,第2342-2348页),该吸收器采用经典的MIM(金属-介质-金属)结构,上层四方晶格金圆盘,中间层为氟化镁薄膜,底层为金薄膜,阻止光的透过,在波长1.6μm处的反射几乎为零,实现了近乎99%的近完美吸收。此后,基于MIM结构的可见光,近红外波段的吸收器有很多,但是大多吸收器的吸收都为单峰或多峰吸收,要想实现一个宽范围的连续高吸收是困难的。想要实现宽范围的连续高吸收,现如今最常用的做法便是基于MIM结构,通过在单位元胞内集合多个尺寸的微结构,实现多个频段的共振耦合,从而实现宽波段的吸收。但是随着微结构形貌,尺寸设计越来越复杂,对于吸收器的制备成本也随之增加,同时纳米级的复杂的几何结构制备,需要用到纳米印刷及光刻等高成本的技术,且制备效率较低。
综上所述,如何实现在吸收器在近红外波段更宽范围的完美吸收,并且解决宽带吸收器结构设计越来越复杂化,制备成本逐渐增加的现状仍然是当前科学与技术领域的一个难题。因此,设计一种结构简单,可大面积制备并且工艺廉价的近红外光谱范围完美光吸收器对于解决现有研究中吸收器带宽窄,吸收率低和制备成本高昂等问题具有非常重要的现实意义和应用价值。
发明内容
基于此,本发明的目的在于解决现有技术中至少一个技术问题,提供一种超材料近红外宽带吸收器,其具有结构简单、工艺廉价且吸收率高的优点。
一种超材料近红外宽带吸收器,其包括衬底以及自下而上依次覆盖于所述衬底上方的金属底层、中部介质层、金属微结构层以及顶部介质层,所述金属微结构层由多个金属微结构按照六方晶格周期性阵列排布构成。
本发明实施例所述超材料近红外宽带吸收器,其通过设置周期性阵列排布的金属微纳米结构,结合金属底层和中部介质层,形成金属-介质-金属结构,金属图形表面形成局域表面等离子体共振,同时与金属底层、中部介质层之间形成磁谐振,在共振耦合的作用下,在1000~3000nm的波段实现了完美吸收,平均吸收率高达98%以上,并且在2000nm的波长范围内,均可以达到较高的吸收率,并且可以通过微调吸收器结构参数,实现吸收波段的移动。
另外,本发明实施例所述超材料近红外宽带吸收器在所述金属微结构层上还设置有顶部介质层,当入射电磁波入射到金属表面,金属内的自由电子会在入射电磁波的影响下形成特定的排布,自由电子的这种排布形成的表面等离激元波在垂直于交界面的方向快速衰减,沿着交界面传播,在顶层增加电介质层可以有效地将倏逝波携带的能量限制在结构体内,减小结构的反射。此外,由于局域表面等离激元模式在金属圆盘顶部局域的磁场也可以有效地被电介质限制在结构中。同时顶部介质层也减少了结构表面的反射增加了光的透过率。
所述超材料近红外吸收器的金属微结构相对简单,可以实现大面积的制备,制作成本低廉,在对红外隐身,红外探测等领域的研究具有重要的参考价值。
进一步地,所述衬底的材料选自硅或石英;所述中部介质层以及所述顶部介质层的材料均选自二氧化硅、氟化镁、二氧化钛中的一种或多种复合。
进一步地,所述金属底层的材料选自铬、银、铝、金、铜、铁中的一种或多种复合,金属底层的设置起到防止入射光透射的作用;所述金属微结构层的材料选自铬、钛、钨中的一种或多种复合。
进一步地,所述金属底层的厚度不小于100nm,以确保入射光不能透过;所述中部介质层的厚度范围为100~200nm;所述顶部介质层的厚度范围为100~300nm,通过对中部介质层的厚度范围进行优选限定,防止由于中部介质层的厚度过薄而导致高损耗电介质不能充分吸收耦合的电磁波能量,进而影响对电磁波的吸收率。
进一步地,所述金属微结构包括若干呈阵列排布的金属微结构组,每一所述金属微结构组包括1个中心微结构以及4个对称设置于所述中心微结构边缘外的子微结构,所述中心微结构的中心与所述子微结构的中心的间距范围为300~500nm。
进一步地,所述中心微结构与所述子微结构为半径相同的金属圆盘,其半径范围为30~500nm,厚度范围为5~20nm。入射电磁波能否与谐振腔产生共振与谐振腔的尺寸有很大关系,通过限定金属圆盘的尺寸,可充分提高谐振腔与入射电磁波的匹配效果,有效提高吸收效果。
另外,本发明实施例还提供一种以上所述的超材料近红外宽带吸收器的制备方法,其包括以下具体操作步骤:
1)在衬底上通过物理沉积的方法均匀沉积形成厚度一致的金属底层;
2)在所述金属底层上通过物理沉积的方法均匀沉积形成厚度一致的中部介质层;
3)在所述中部介质层上方放置微结构模板,所述微结构模板为板状结构,其贯穿开设有若干通孔,若干所述通孔按照预设方式阵列排布,且所述通孔的形状及尺寸对应与所述金属微结构相匹配;随后自所述微结构模板的上方在所述中部介质层上通过物理沉积的方法均匀沉积,除去所述微结构模板后得到厚度一致的金属微结构层;
4)在所述金属微结构层上通过物理沉积的方法均匀沉积形成厚度一致的顶部介质层。
本发明实施例所述超材料近红外宽带吸收器的制备方法,其制备工艺简单,通过采用相对廉价的加工生产工艺,相对于现有近红外宽带吸收器其生产成本更低,且可制备的样品面积大,可实现大面积的样品制备,且制备得到的吸收器带宽更宽,在较宽的范围内可维持较高的吸收率。
进一步地,所述物理沉积的方法包括磁控溅射沉积、真空电子束沉积以及离子束溅射沉积。
进一步地,所述微结构模板为通过热纳米压印技术制备得到。
所述物理沉积的方法以及所述热纳米压印技术的生产成本均相对廉价,且便于进行大面积制备。
为了更好地理解和实施,下面结合附图详细说明本发明。
附图说明
图1为本发明所述超材料近红外宽带吸收器的立体示意图;
图2为本发明所述超材料近红外宽带吸收器的剖面示意图;
图3为本发明所述超材料近红外宽带吸收器去除顶部介质层后的立体示意图;
图4为本发明单组所述金属微结构组的俯视示意图;
图5为本发明实施例1所述超材料近红外宽带吸收器的光吸收图;
图6为本发明实施例2所述超材料近红外宽带吸收器的光吸收图;
图7为本发明实施例3所述超材料近红外宽带吸收器的光吸收图;
图8为本发明实施例4所述超材料近红外宽带吸收器的光吸收图;
图9为本发明实施例5所述超材料近红外宽带吸收器的光吸收图。
具体实施方式
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
请参照图1-3,图1为本发明所述超材料近红外宽带吸收器的立体示意图,图2为本发明所述超材料近红外宽带吸收器的剖面示意图,图3为本发明所述超材料近红外宽带吸收器去除顶部介质层后的立体示意图。如图所示,本发明实施例提供一种超材料近红外宽带吸收器,其包括依次固定连接的衬底1、金属底层2、中部介质层3、金属微结构层4以及顶部介质层5。
衬底1位于结构最下层,作为结构的基底,材料可选用硅或石英,其厚度厚度h1为5mm。
衬底1上沉积有金属底层2;金属底层2起到防止入射光透射的作用,其材料选用铬、银、铝、金、铜、铁中的一种或多种复合,其厚度h2不小于100nm,以确保入射光不能透过。
金属底层2上沉积有中部介质层3,中部介质层3的材料选自二氧化硅、氟化镁、二氧化钛中的一种或多种复合,厚度范围h3为100~200nm。
金属微结构层4位于中部介质层3上方,金属微结构层4为由多个金属微结构周期性阵列排布构成;作为一种可选实施方式,在本实施例中,金属微结构层4包括若干呈阵列排布的金属微结构组,请参照图4,图4为本发明单组所述金属微结构组的俯视示意图,如图所示,每一所述金属微结构组包括1个中心微结构41以及4个对称设置于中心微结构41边缘外的子微结构42,中心微结构41的中心与子微结构42的中心的间距范围P为300~500nm;进一步地,中心微结构41与子微结构42为半径相同的金属圆盘,其半径范围R1为30~500nm,厚度范围h4为5~20nm。
顶部介质层5直接沉积在金属微结构4上方,填满金属微结构间的空隙,见图3,其厚度范围h5为300~500nm。
另外,本发明实施例还提供一种以上所述超材料近红外宽带吸收器的制备方法,其包括以下具体操作步骤:
1)在衬底1上通过物理沉积的方法均匀沉积形成厚度一致的金属底层2;
2)在金属底层2上通过物理沉积的方法均匀沉积形成厚度一致的中部介质层3;
3)在中部介质层3上方放置微结构模板,所述微结构模板为板状结构,其贯穿开设有若干通孔,若干所述通孔按照预设方式阵列排布,且所述通孔的形状及尺寸对应与所述金属微结构相匹配;随后自所述微结构模板的上方在中部介质层3上通过物理沉积的方法均匀沉积,除去所述微结构模板后得到厚度一致的金属微结构层4,即如图3所示,该金属微结构层4为中部介质层3上按照预设方式阵列排列的凸起结构,凸起高度为金属微结构层4的厚度h4;
4)在金属微结构层4上再通过物理沉积的方法均匀沉积形成厚度一致的顶部介质层5;由于顶部介质层5的沉积是均匀的,其在沉积过程中能够填充于金属微结构内的空隙,因而如图1和3中所示,填充完成后,该顶部介质层5的上表面具有与金属微结构形状相匹配的凸起,该凸起高度与金属微结构层4的厚度h4相等。
所述物理沉积的方法包括磁控溅射沉积、真空电子束沉积以及离子束溅射沉积。所述微结构模板为通过热纳米压印技术制备得到。
所述物理沉积的方法以及所述热纳米压印技术的生产成本均相对廉价,且便于进行大面积制备。
以下通过若干实施例列举对技术方案进行对比说明。
实施例1
本发明实施例1提供一种超材料近红外宽带吸收器,其中:衬底1选用硅基底,厚度h1为5mm,金属底层2选用金属铬,厚度h2设置为100nm,中部介质层3选用二氧化硅,厚度h3设置为110nm,金属圆盘材料选用金属铬,厚度h4为20nm,圆盘周期P为300nm,半径R1为130nm,顶部介质层厚度h5为270nm,材料为二氧化硅。
实施例2
本发明实施例2提供一种超材料近红外宽带吸收器,其中:衬底1选用石英基底,厚度h1为5mm,金属底层2选用金属铬,厚度h2设置110nm,中部介质层3采用二氧化硅,厚度h3设置140nm。金属圆盘4材料选用金属铬,厚度h4为15nm,圆盘周期P为500nm,半径R1为180nm,顶部介质层厚度h5为180nm,材料为二氧化硅。
实施例3
本发明实施例3提供一种超材料近红外宽带吸收器,其中:衬底1选用硅基底,厚度为5mm,金属底层2选用金属铬,厚度h2设置为100nm,中部介质层3选用二氧化硅,厚度h3设置为110nm,金属圆盘材料选用金属铬,厚度h4为20nm,圆盘周期为300nm,半径R1为130nm。
实施例4
本发明实施例4提供一种超材料近红外宽带吸收器,其中:衬底1选用硅基底,厚度h1为5mm,金属底层2选用金属铬,厚度h2设置为100nm,中部介质层3选用二氧化硅,厚度h3设置为30nm,金属圆盘材料选用金属铬,厚度h4为20nm,圆盘周期P为300nm,半径R1为130nm。顶部介质层厚度h5为270nm,材料为二氧化硅。
实施例5
本发明实施例5提供一种超材料近红外宽带吸收器,其中:衬底1选用硅基底,厚度h1为5mm,金属底层2选用金属铬,厚度h2设置为100nm,中部介质层3选用二氧化硅,厚度h3设置为110nm,金属圆盘材料选用金属铬,厚度h4为20nm,圆盘周期P为300nm,半径R1为100nm,顶部介质层厚度h5为270nm,材料为二氧化硅。
实施例1-5所述超材料近红外宽带吸收器均采用磁控溅射镀膜技术逐层沉积制得。
对实施例1-5制得的超材料近红外宽带吸收器进行性能测试:通过时域有限差分法(FDTD)模拟出该光学器件结构的最小元胞,设置相应的边界条件进行模拟,计算出模拟结果,测得的模拟光谱图如图5-9所示,以通过该模拟结果展示所述超材料红外宽带吸收器的近红外光吸收效果。同时,对比试验中还使用了不透明的金属材料作为基底,测得结构对光的透射率T为0,根据公式吸收A=1-R-T,得出吸收只与反射率相关。
图5为本发明实施例1所述超材料近红外宽带吸收器的光吸收图,如附图5所示,从模拟光谱图上可以发现,从1000nm到3300nm整体吸收率都在90%以上,波长范围达到了2300nm,在1200nm到3000nm,整体吸收率几乎都达到了99%的吸收效果,波长范围达到了1800nm,在1700nm处最高吸收率达到了99.97%。
图6为本发明实施例2所述超材料近红外宽带吸收器的光吸收图,如附图6所示,在650nm到3180nm的波长范围内,吸收率超过90%,完美覆盖了近红外波段,并且在900nm和1700nm到2730nm吸收率在98%以上。
图7为本发明实施例3所述超材料近红外宽带吸收器的光吸收图,作为实例1的对照组,实施例3所述超材料近红外宽带吸收器不设置所述顶部介质层。通过对比图5和图7可以发现,在去掉顶部介质层后,吸收带宽和吸收率发生了明显的降低,说明顶部介质层在完美宽带吸收中起到了至关重要的作用。入射电磁波入射到金属表面,金属内的自由电子会在入射电磁波的影响下形成特定的排布,自由电子的这种排布形成的表面等离激元波在垂直于交界面的方向快速衰减,沿着交界面传播,在顶层增加电介质层可以有效地将倏逝波携带的能量限制在结构体内,更有利于吸收共振所产生倏逝波的能量,减小结构的反射。此外,由于局域表面等离激元模式在金属圆盘顶部局域的磁场也可以有效地被电介质限制在结构中。同时顶部介质层,如本实施例3中的二氧化硅膜也减少了结构表面的反射增加了光的透过率,依据四分之一波长法的减反射膜,膜的光学厚度理论上为入射光在介质中的波长的四分之一,通过优选限定顶部介质层的厚度,可使薄膜的减反射效果达到最好。
图8为本发明实施例4所述超材料近红外宽带吸收器的光吸收图,作为实施例1的对照组,实施例4所述超材料近红外宽带吸收器中改变了中部介质层的厚度。通过对比图5和图8可以得出,实施例4所述超材料近红外宽带吸收器在650nm到3180nm的波长范围内,吸收率有明显的下降,最高点吸收率不足90%,带宽也明显变窄。由此可见,当中部介质层变薄时,高损耗电解质不能充分吸收耦合的电磁波能量。因此中部介质层厚度数值对于吸收效果具有明显的影响,只有在上述所述的厚度范围内才能达到良好的吸收效果。
图9为本发明实施例5所述超材料近红外宽带吸收器的光吸收图,作为实施例1的对照组,实施例4所述超材料近红外宽带吸收器中改变了金属圆盘的半径,通过对比图5和图9可以看到吸收率发生了明显变化,长波段的吸收峰下降明显,只留下一个短波段的吸收峰。入射电磁波能否与谐振腔产生共振与谐振腔的尺寸有很大关系。为了能产生最好的吸收效果,通过圆盘的半径的调整可以使谐振腔即金属结构的尺寸达到最好的匹配效果,进而达到最好的吸收效果。
由上可知,本发明实施例所述超材料近红外宽带吸收器,其通过设置周期性阵列排布的金属微纳米结构,结合金属底层和中部介质层,形成金属-介质-金属结构,金属图形表面形成局域表面等离子体共振,同时与金属底层、中部介质层之间形成磁谐振,在共振耦合的作用下,在1000~3000nm的波段实现了完美吸收,平均吸收率高达98%以上,并且在2000nm的波长范围内,均可以达到较高的吸收率,并且可以通过优选设计超材料吸收器的几何结构参数,选择合适的结构材料,可以使吸收器结构产生多重强的电磁共振模式,同时通过微调吸收器结构参数,实现吸收波段的移动。
另外,本发明实施例所述超材料近红外宽带吸收器在所述金属微结构层上还设置有顶部介质层,当入射电磁波入射到金属表面,金属内的自由电子会在入射电磁波的影响下形成特定的排布,自由电子的这种排布形成的表面等离激元波在垂直于交界面的方向快速衰减,沿着交界面传播,在顶层增加电介质层可以有效地将倏逝波携带的能量限制在结构体内,减小结构的反射。此外,由于局域表面等离激元模式在金属圆盘顶部局域的磁场也可以有效地被电介质限制在结构中。同时顶部介质层也减少了结构表面的反射增加了光的透过率。
所述超材料近红外吸收器的金属微结构相对简单,可以实现大面积的制备,制作成本低廉,在对红外隐身,红外探测等领域的研究具有重要的参考价值。
本发明实施例所述超材料近红外宽带吸收器的制备方法,其制备工艺简单,通过采用相对廉价的加工生产工艺,相对于现有近红外宽带吸收器其生产成本更低,且可制备的样品面积大,可实现大面积的样品制备,且制备得到的吸收器带宽更宽,在较宽的范围内可维持较高的吸收率。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (9)
1.一种超材料近红外宽带吸收器,其特征在于:包括衬底以及自下而上依次覆盖于所述衬底上方的金属底层、中部介质层、金属微结构层以及顶部介质层,所述金属微结构层由多个金属微结构周期性阵列排布构成。
2.根据权利要求1所述的超材料近红外宽带吸收器,其特征在于:所述衬底的材料选自硅或石英;所述中部介质层以及所述顶部介质层的材料均选自二氧化硅、氟化镁、二氧化钛中的一种或多种复合。
3.根据权利要求1所述的超材料近红外宽带吸收器,其特征在于:所述金属底层的材料选自铬、银、铝、金、铜、铁中的一种或多种复合;所述金属微结构层的材料选自铬、钛、钨中的一种或多种复合。
4.根据权利要求1所述的超材料近红外宽带吸收器,其特征在于:所述金属底层的厚度不小于100nm;所述中部介质层的厚度范围为100~200nm;所述顶部介质层的厚度范围为100~300nm。
5.根据权利要求1所述的超材料近红外宽带吸收器,其特征在于:所述金属微结构包括若干呈阵列排布的金属微结构组,每一所述金属微结构组包括1个中心微结构以及4个对称设置于所述中心微结构边缘外的子微结构,所述中心微结构的中心与所述子微结构的中心的间距范围为300~500nm。
6.根据权利要求5所述的超材料近红外宽带吸收器,其特征在于:所述中心微结构与所述子微结构为半径相同的金属圆盘,其半径范围为30~500nm,厚度范围为5~20nm。
7.一种权利要求1~6任一所述的超材料近红外宽带吸收器的制备方法,其特征在于,包括以下具体操作步骤:
1)在衬底上通过物理沉积的方法均匀沉积形成厚度一致的金属底层;
2)在所述金属底层上通过物理沉积的方法均匀沉积形成厚度一致的中部介质层;
3)在所述中部介质层上方放置微结构模板,所述微结构模板为板状结构,其贯穿开设有若干通孔,若干所述通孔按照预设方式阵列排布,且所述通孔的形状及尺寸对应与所述金属微结构相匹配;随后自所述微结构模板的上方在所述中部介质层上通过物理沉积的方法均匀沉积,除去所述微结构模板后得到厚度一致的金属微结构层;
4)在所述金属微结构层上通过物理沉积的方法均匀沉积形成厚度一致的顶部介质层。
8.根据权利要求7所述的超材料近红外宽带吸收器的制备方法,其特征在于:所述物理沉积的方法包括磁控溅射沉积、真空电子束沉积以及离子束溅射沉积。
9.根据权利要求7所述的超材料近红外宽带吸收器的制备方法,其特征在于:所述微结构模板为通过热纳米压印技术制备得到。
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