CN114538512A - Luminescent vanadium tetrasulfide, preparation method and application thereof - Google Patents
Luminescent vanadium tetrasulfide, preparation method and application thereof Download PDFInfo
- Publication number
- CN114538512A CN114538512A CN202210025788.6A CN202210025788A CN114538512A CN 114538512 A CN114538512 A CN 114538512A CN 202210025788 A CN202210025788 A CN 202210025788A CN 114538512 A CN114538512 A CN 114538512A
- Authority
- CN
- China
- Prior art keywords
- luminescent
- vanadium tetrasulfide
- vanadium
- tetrasulfide
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/69—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing vanadium
- C09K11/691—Chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W10/00—Technologies for wastewater treatment
- Y02W10/30—Wastewater or sewage treatment systems using renewable energies
- Y02W10/37—Wastewater or sewage treatment systems using renewable energies using solar energy
Abstract
The invention discloses a preparation method of luminescent vanadium tetrasulfide, which comprises the following steps: will VS4Dispersing powder in a high-boiling point glycol solution to obtain a mixed solution A, ultrasonically vibrating the mixed solution A for 4-6h, heating to 70-100 ℃, stirring at the stirring speed of 300-600r/s for 3-7 days to obtain a mixed solution B, adding ethanol into the mixed solution B, centrifugally washing, and drying to obtain the luminescent vanadium tetrasulfide. The preparation method is simple and efficient. The invention also discloses luminescent vanadium tetrasulfide prepared by the preparation method of the luminescent vanadium tetrasulfide. The vanadium tetrasulfide has high catalytic performance and good luminescence property. The invention also discloses application of the luminescent vanadium tetrasulfide in degrading and purifying organic pollutants.
Description
Technical Field
The invention belongs to the field of luminescent materials, and particularly relates to luminescent vanadium tetrasulfide as well as a preparation method and application thereof.
Background
The transition metal sulfide has unique physical chemistryThe properties and the crystal structure can be widely applied to the field of energy sources, so that the material becomes a potential luminescent and catalytic material. For example, as lithium electrodes, catalysts, etc., are a very important class of materials. In particular, vanadium disulfide (VS2) is of particular interest. VS with lamellar results has recently been reported2The quantum dots and the nano-sheets show good luminescence characteristics and excellent photocatalytic pollutant degradation performance.
So far, vanadium disulfide powder with excellent performance is difficult to obtain by direct combination of elements, is mostly synthesized in an organic solvent, the preparation method is complex to operate, expensive cost is required, the valence state of vanadium in the vanadium is difficult to control, and VS is difficult to obtain2The preparation cost of the vanadium disulfide powder is greatly improved, and the large-scale production is difficult to realize.
VS metallic compared to band structure2Vanadium tetrasulfide (VS)4) Has a special one-dimensional chain structure and a semiconductor band gap structure. Has received much attention in battery electrode materials in view of its high theoretical specific capacity and excellent electrochemical reversibility. VS4Has a one-dimensional chain semiconductor structure and multiple active sites, which has great application prospect in flexible light-emitting devices and photocatalytic degradation pollution, but currently VS4The luminescence and catalytic properties of (A) are rarely reported.
The major difficulty facing today is VS4The band gap is about 1.0eV, and photocatalysis by visible light is impossible, and similarly, the band gap is narrow, and light emission in the visible light region cannot be realized. VS4The interlamellar spacing between the one-dimensional atomic chains is large (0.583nm), the atomic chains are only connected through weak van der Waals bonds to provide a loose one-dimensional stacking structure, and VS can be regulated and controlled by regulating and controlling the stacking structure of the V-S atomic chains4Micro-morphology and electronic band structure. VS4The change of the atomic chain structure can make the atomic chain structure change from the indirect band gap of the bulk to the direct band gap. The transition of electrons in a semiconductor having a direct band gap does not require release or absorption of phonons (i.e., lattice vibration), thereby avoiding energy loss, and exhibiting excellent light emission characteristics at short wavelengths such as a visible light region, etc.;furthermore, VS4The one-dimensional atomic chain structure is beneficial to the migration of carriers, so that the stacking structure of the atomic chain is changed, the electron/hole mobility of the atomic chain can be regulated and controlled, and the VS is reduced4The dimension and the specific surface area of the photocatalyst are increased, the active sites of the photocatalyst are increased, and excellent photocatalytic activity can be obtained, so that the performance of degrading pollutants by photocatalysis is improved.
Therefore, development of regulatory VS4An effective preparation method of a stacking mode of a one-dimensional chain structure is a key problem to be solved at present. At present, few stripping methods are used for low-dimensional materials, wherein a solvent dispersion method is simple and efficient, and shows a good effect. At present, the method for dispersing and stripping one-dimensional sulfide and selenide can only realize the regulation and control of micro-nano scale, and the method does not realize obvious atom-level local stacking
Disclosure of Invention
The invention provides a preparation method of luminescent vanadium tetrasulfide, which is simple and efficient, and the prepared vanadium tetrasulfide has high catalytic performance and good luminescent property.
A preparation method of luminescent vanadium tetrasulfide comprises the following steps: will VS4Dispersing powder in a high-boiling point glycol solution to obtain a mixed solution A, ultrasonically vibrating the mixed solution A for 4-6h, heating to 70-100 ℃, stirring at the stirring speed of 300-600r/s for 3-7 days to obtain a mixed solution B, adding ethanol into the mixed solution B, centrifugally washing, and drying to obtain the luminescent vanadium tetrasulfide.
Because of VS4The crystal is relatively stable, and the chemical bond in the crystal is very difficult to break. Therefore, high temperature of 70-100 ℃ is adopted to ensure that glycol molecules in high boiling point solvent are infiltrated into VS4Is expanded and then broken by ultrasonic vibration and long-term stirring (3-7) days4Van der Waals force between the medium V-S atomic chains, so that regulation and control of a V-S atomic chain stacking structure are realized, and the luminescent vanadium tetrasulfide is obtained and has high catalytic performance.
The required heating temperature is not too low or too high, and the stirring time is not too short. The dispersing effect is not obvious when the temperature is too low and the stirring time is too short, and the dispersion is easy to damage when the temperature is too highVS4The structure of the atomic chain and the initiation of other chemical reactions.
The dispersion temperature of the high-boiling point glycol solution is 70-120 ℃.
The VS4The mass/solution ratio of the powder to the high boiling point ethylene glycol is 0.1-0.3 g/L.
The centrifugal washing parameters are as follows: the centrifugal washing speed is 4000-8000r/s, and the centrifugal washing time is 4-8 min.
The drying parameters are as follows: the drying temperature is 40-60 deg.C, and the drying time is 8-12 h.
The luminescent vanadium tetrasulfide prepared by the preparation method has a V-S atomic chain bending stacking structure.
The luminous vanadium tetrasulfide has 002 or 011 crystal faces and 0.4-0.8nm crystal face spacing.
The luminescent vanadium tetrasulfide has a luminescent peak in a visible light range with the wavelength of 390-500 nm.
The luminescent vanadium tetrasulfide is applied to degrading and purifying organic pollutants.
The organic pollutant is rhodamine, and is completely degraded within 4-8 h.
Compared with the prior art, the invention has the beneficial effects that:
the preparation method of the luminescent vanadium tetrasulfide provided by the invention utilizes a stirring mode with higher temperature and higher strength to permeate ethylene glycol into the vanadium tetrasulfide and change the chain structure of the vanadium tetrasulfide to form a stacked curved chain structure, so that the vanadium tetrasulfide prepared by the preparation method provided by the invention can emit light in a visible light range with the wavelength of 390-500nm, has better photocatalytic performance, can be applied to aspects such as flexible light-emitting devices, photocatalysts and the like, and is simple and easy to edit, low in cost and capable of realizing under the normal pressure condition.
Drawings
FIG. 1 is a graph showing comparative example 1 (VS)4-0), comparative example 2 (VS)4-1), example 1 (VS)4-2), example 2 (VS)4-3) preparation of VS4Wherein FIG. 1(a) is an XRD pattern of 10 to 40 degrees in diffraction angleXRD pattern, FIG. 1(b) is XRD pattern with diffraction angle of 15-17.5 degrees.
FIG. 2 is VS prepared in comparative example 1, and example 24In which FIG. 2(a) is a comparative example 1 (VS)4HRTEM image of-0), FIG. 2(b) is example 1 (VS)4HRTEM image of-2), FIGS. 2(c) and (d) are example 2 (VS)4HRTEM image of-3).
FIG. 3 is VS prepared in comparative example 1 and example 24-3 luminescence map.
FIG. 4 is VS prepared in example 24-3 rhodamine degradation ultraviolet absorption map.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary of the invention and are not intended to be limiting thereof.
Comparative example 1
1g of ammonium metavanadate (NaVO) was weighed3) Mixing with 3.6g Thioacetamide (TAA), and stirring in 60ml deionized water; dropwise adding prepared 3mol/L hydrochloric acid in the stirring process to adjust the pH value to 3; stirring for 40 min, pouring into polytetrafluoroethylene lining, placing into a hydrothermal reaction kettle, keeping the temperature at 180 ℃ in an oven for 24h, and taking out after cooling to room temperature. Pouring a sample in the hydrothermal reaction kettle into a centrifuge tube sample; adding ethanol into the solution, performing ultrasonic oscillation uniformly, centrifuging at 8000r/s for 3min, removing supernatant, adding ethanol, performing ultrasonic oscillation uniformly, centrifuging, repeating the step for 3 times, drying in oven at 60 deg.C for 18h, taking out, and grinding to obtain VS4Powder precursor, noted VS4-0. VS by XRD as shown in FIGS. 1(a) and 1(b)4The-0 diffraction peak may correspond to VS421-1434 of a PDF card. As shown in FIG. 2c, the high resolution electron microscopy results show VS4The spacing between the-0 planes is 0.310nm and is assigned to the 301 plane.
Comparative example 2
The normal-temperature stirring ultrasonic treatment method comprises the following steps: weighing 20mg VS4-0 powder precursor is put into a single-neck flask, 40ml of acetone is poured into the single-neck flask, the mixture is taken out after being subjected to ultrasonic treatment for 3 days by an ultrasonic cleaning machine, the mixture is centrifuged for 4min at the rotating speed of 6000r/s by a centrifuge, ethanol is poured into the mixture after supernatant fluid is removed, the mixture is continuously centrifuged for 3 times, finally the supernatant fluid is poured out, and the mixture is put into a drying oven to be driedDrying at 60 deg.C for 18h, and storing at room temperature to obtain VS4Powder, designated VS-1. As shown in FIGS. 1(a) and 1(b), the diffraction peak of XRD corresponds to VS4PDF card 87-0603. And VS4Comparison of-0, VS4The diffraction peak angle of-1 did not change.
Example 1
High-temperature stirring treatment method 1: weighing 15mg VS4-0 powder precursor into a single-neck flask and 120ml ethylene glycol was poured into the flask and stirred for 6 days by heating to 100 ℃ with a magnetic stirrer at a stirring rate of 300r/s, and the sample obtained, designated VS, was stored at room temperature4-2. As shown in FIGS. 1(a) and 1(b), the diffraction peak of XRD is shifted to a low angle by 0.15 degrees, which is related to VS4Larger interplanar spacing, VS, than 14-2 lattice spacing is significantly broadened. As shown in FIG. 2(b), the high resolution electron microscope showed that the interplanar spacing was 0.607nm, which was attributed to the 002 plane, and a unique phenomenon of lattice bending distortion was present. However VS4The-0 lattice does not change significantly as shown in FIG. 2 (a). The above results show that van der waals forces between vanadium sulfur atom chains are destroyed by the glycol solvent treatment at 100 ℃, resulting in significant lattice distortion.
Example 2
High-temperature stirring treatment method 2: in contrast to example 1, 15mg of VS was weighed out4-0 powder precursor is put into a single-neck flask, 50ml of ethylene glycol is poured into the single-neck flask, and the mixture is heated to 70 ℃ by a magnetic stirrer and stirred for 3 days at a stirring speed of 500 r/s; adding ethanol, centrifuging at 8000r/s for 4min, removing supernatant, adding ethanol, centrifuging for 3 times, removing supernatant, drying at 60 deg.C for 18 hr, storing at room temperature to obtain sample designated as VS4-3. As shown in FIGS. 1(a) and 1(b), the diffraction peak of XRD is shifted to a low angle of 0.18 degrees, in relation to VS4The-1 crystal face spacing becomes larger and the lattice spacing becomes significantly wider. As shown in FIGS. 2c and 2d, the high resolution electron microscope shows that the interplanar spacing is 0.568nm, which belongs to 011 planes, and a unique crystal lattice bending distortion structure and an irregular chain-shaped stacking structure exist. The results show that the van der Waals force between vanadium and sulfur atom chains is destroyed after the treatment at 70 ℃ by the glycol solvent, resulting in the destructionThe crystal lattice is significantly distorted. And VS 42 comparison, VS4Local lattice distortion of-3 is more pronounced and therefore is investigated as a step in luminescence and catalytic performance.
Characterization of luminescence Properties
Respectively weighing VS4-0 and VS 43 fluorescence spectra of 2mg each, as shown in FIG. 3, finding VS4-3 a distinct luminescence peak in the visible range of 390-500nm, whereas the untreated VS 40 has no light emission characteristic.
Application example
Testing VS4-3 photocatalytic rhodamine (RhB) degradation: weighing 0.5mg of VS4And 3, dispersing the rhodamine in an aqueous solution of rhodamine with the concentration of 0.005g/L, and irradiating the rhodamine aqueous solution for 8 hours by using a simulated solar light source, wherein the pink completely disappears, and the absorption peak intensity is close to zero, which indicates that the rhodamine is completely degraded, and is shown in FIG. 4. The results show that VS4-3 has good photocatalytic performance for degrading pollutants under the irradiation of sunlight.
Claims (9)
1. A preparation method of luminescent vanadium tetrasulfide is characterized by comprising the following steps: will VS4Dispersing powder in a high-boiling point glycol solution to obtain a mixed solution A, ultrasonically vibrating the mixed solution A for 4-6h, heating to 70-100 ℃, stirring at the stirring speed of 300-600r/s for 3-7 days to obtain a mixed solution B, adding ethanol into the mixed solution B, centrifugally washing, and drying to obtain the luminescent vanadium tetrasulfide.
2. The method of claim 1, wherein the dispersion temperature of the high boiling point glycol solution is 70-100 ℃.
3. The method of claim 1, wherein said VS is provided by4The mass/solution ratio of the powder to the high boiling point ethylene glycol is 0.1-0.3 g/L.
4. The method of claim 1, wherein the centrifugal washing parameters are: the centrifugal washing speed is 4000-8000r/s, and the centrifugal washing time is 4-8 min.
5. The luminescent vanadium tetrasulfide prepared by the method for preparing the luminescent vanadium tetrasulfide according to any one of claims 1 to 4, characterized in that the luminescent vanadium tetrasulfide has a V-S atomic chain bent stacking structure.
6. The luminescent vanadium tetrasulfide prepared by the preparation method of the luminescent vanadium tetrasulfide of claim 5, characterized in that the luminescent vanadium tetrasulfide is 002 or 011 crystal planes, and the spacing between the crystal planes is 0.4-0.8 nm.
7. The luminescent vanadium tetrasulfide prepared by the preparation method of the luminescent vanadium tetrasulfide as claimed in claim 5, characterized in that the luminescent vanadium tetrasulfide has a luminescence peak in the wavelength range of 390-500nm visible light.
8. The application of the luminescent vanadium tetrasulfide prepared by the preparation method of the luminescent vanadium tetrasulfide according to claim 5 in degrading and purifying organic pollutants.
9. The application of the luminescent vanadium tetrasulfide prepared by the preparation method of the luminescent vanadium tetrasulfide according to claim 8 in degrading and purifying organic pollutants, characterized in that the organic pollutants are rhodamine, and the degradation time is 4-8 h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210025788.6A CN114538512B (en) | 2022-01-11 | 2022-01-11 | Luminescent vanadium tetrasulfide and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210025788.6A CN114538512B (en) | 2022-01-11 | 2022-01-11 | Luminescent vanadium tetrasulfide and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114538512A true CN114538512A (en) | 2022-05-27 |
| CN114538512B CN114538512B (en) | 2023-07-18 |
Family
ID=81669399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210025788.6A Active CN114538512B (en) | 2022-01-11 | 2022-01-11 | Luminescent vanadium tetrasulfide and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114538512B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115215421A (en) * | 2022-08-16 | 2022-10-21 | 南华大学 | Application of vanadium tetrasulfide in degradation of organic pollutants |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107381636A (en) * | 2017-07-11 | 2017-11-24 | 陕西科技大学 | A kind of vanadic sulfide powder of nano-particles self assemble three dimensional micron cauliflower-shaped four and its preparation method and application |
| CN108862381A (en) * | 2018-06-26 | 2018-11-23 | 中国科学院宁波材料技术与工程研究所 | Four vanadic sulfide electrode materials of one kind and its preparation method and application |
| CN110180556A (en) * | 2019-05-28 | 2019-08-30 | 广州大学 | A kind of four vanadic sulfide fenton catalyst of modification and its preparation method and application |
| AU2020101299A4 (en) * | 2020-06-08 | 2020-08-20 | Qilu University Of Technology | Vanadium tetrasulfide-nitrogen-doped carbon tube composite and preparation method and use thereof |
| CN112242526A (en) * | 2020-10-20 | 2021-01-19 | 青岛科技大学 | Mo-doped VS4Magnesium ion battery positive electrode material and application thereof |
-
2022
- 2022-01-11 CN CN202210025788.6A patent/CN114538512B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107381636A (en) * | 2017-07-11 | 2017-11-24 | 陕西科技大学 | A kind of vanadic sulfide powder of nano-particles self assemble three dimensional micron cauliflower-shaped four and its preparation method and application |
| CN108862381A (en) * | 2018-06-26 | 2018-11-23 | 中国科学院宁波材料技术与工程研究所 | Four vanadic sulfide electrode materials of one kind and its preparation method and application |
| CN110180556A (en) * | 2019-05-28 | 2019-08-30 | 广州大学 | A kind of four vanadic sulfide fenton catalyst of modification and its preparation method and application |
| AU2020101299A4 (en) * | 2020-06-08 | 2020-08-20 | Qilu University Of Technology | Vanadium tetrasulfide-nitrogen-doped carbon tube composite and preparation method and use thereof |
| CN112242526A (en) * | 2020-10-20 | 2021-01-19 | 青岛科技大学 | Mo-doped VS4Magnesium ion battery positive electrode material and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| 张浩;高阳;聂忠言;徐岳锋;: "38MnVS4非调质钢在汽车涨断连杆上的应用", 汽车工艺与材料, no. 11 * |
| 胡传珠;邹建新;丁文江;: "镁离子电池正极材料VS_4掺杂改性的第一性原理研究", 原子与分子物理学报, no. 01 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115215421A (en) * | 2022-08-16 | 2022-10-21 | 南华大学 | Application of vanadium tetrasulfide in degradation of organic pollutants |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114538512B (en) | 2023-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Adekunle et al. | Potential of cobalt and cobalt oxide nanoparticles as nanocatalyst towards dyes degradation in wastewater | |
| CN100348318C (en) | Nanometer, composite semiconductor photocatalyst, and its prepn. method | |
| Sun et al. | Toward a rational photocatalyst design: a new formation strategy of co-catalyst/semiconductor heterostructures via in situ exsolution | |
| CN110229667B (en) | Black phosphorus quantum dot and titanium dioxide black phosphorus quantum dot composite material as well as preparation method and application thereof | |
| CN105879884B (en) | One-dimensional ZnS/CdS-C nanocomposites and preparation method thereof | |
| CN108855131B (en) | Preparation and application of silver-nickel bimetal doped titanium dioxide nano composite material | |
| CN109748322B (en) | Synthesis method and application of alpha-MnS nano particles and alpha-MnS/rGO composite material | |
| CN110368962A (en) | A kind of BiOI/WO3Preparation method, product and the application of hetero-junctions efficient photoelectricity treater catalysis electrode | |
| CN106430308A (en) | Method for preparing vanadium pentoxide solid microspheres through hydrothermal method | |
| Singh et al. | Efficient charge transfer in heterostructures of CdS/NaTaO3 with improved visible-light-driven photocatalytic activity | |
| CN114538512A (en) | Luminescent vanadium tetrasulfide, preparation method and application thereof | |
| CN108675339A (en) | A kind of preparation method of the glomerate zinc cadmium sulphur solid-solution material of rodlike self assembly | |
| CN113578306A (en) | Preparation method of 2D/1D heterojunction photocatalyst and application thereof in hydrogen production | |
| CN110615470A (en) | One-dimensional metal-doped rutile titanium dioxide nanowire and preparation method thereof | |
| CN107961785B (en) | Preparation method and application of high-activity bismuth chromate nano photocatalyst | |
| CN109876814A (en) | A kind of oxygen defect TiO2@ZnFe2O4The preparation method of heterojunction photocatalysis material | |
| CN101786023B (en) | Ultrasonic chemical in-situ preparation method for phthalocyanine-sensitized vanadate nano-powder | |
| CN115569658A (en) | CABB/UCNT heterojunction composite photocatalyst and preparation method and application thereof | |
| CN109954509B (en) | Preparation method and application of silicon carbide-based photocatalyst | |
| CN114907360A (en) | Metal-free ferroelectric nanocrystalline MDABCO-NH 4 I 3 Preparation method of (1) | |
| CN114653383A (en) | Indium zinc sulfide photocatalyst with surface modified by cobalt tungstate and cobaltosic oxide together and preparation method and application thereof | |
| CN110252344A (en) | A kind of WS2/GQDs/TiO2Composite photo-catalyst and its preparation method and application | |
| CN107376942B (en) | Spherical Bi2S3Preparation method of photocatalytic material | |
| CN109046395A (en) | A kind of telluric acid bismuth/bismuth oxide heterojunction material, preparation method and applications | |
| CN115043422B (en) | Method for controllably preparing CuO nano material by ultrasonic chemistry and annealing assistance and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |