CN114538442B - Carbon dioxide reduction method based on semiconductor powder friction catalysis - Google Patents
Carbon dioxide reduction method based on semiconductor powder friction catalysis Download PDFInfo
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- CN114538442B CN114538442B CN202011300518.9A CN202011300518A CN114538442B CN 114538442 B CN114538442 B CN 114538442B CN 202011300518 A CN202011300518 A CN 202011300518A CN 114538442 B CN114538442 B CN 114538442B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/40—Carbon monoxide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/26—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
- B01J31/38—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of titanium, zirconium or hafnium
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C1/00—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
- C07C1/20—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon starting from organic compounds containing only oxygen atoms as heteroatoms
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
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- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention provides a carbon dioxide reduction method based on semiconductor powder friction catalysis, which is characterized by comprising the following steps of: and adding the semiconductor powder with friction catalysis performance and the organic friction material into the solution in which the carbon dioxide is dissolved, so that the semiconductor powder and the organic friction material rub against each other, and the carbon dioxide in the solution is reduced into carbon monoxide and methane. The invention firstly realizes that mechanical energy is used for reducing carbon dioxide, in an aqueous solution dissolved with carbon dioxide, the semiconductor powder with friction catalysis performance is added, then some organic materials, such as more magnetons with Teflon surfaces (or other polymer material coatings) are added for magnetic stirring, and carbon dioxide in the solution can be efficiently reduced into methane and carbon monoxide through friction between the semiconductor powder and the Teflon (or other polymer material coatings), so that a brand new scheme is provided for reducing the carbon dioxide.
Description
Technical Field
The invention belongs to the technical field of carbon dioxide catalytic reduction, and particularly relates to a carbon dioxide reduction method based on semiconductor powder friction catalysis.
Technical Field
The reduction of carbon dioxide into combustible gas is of great significance to low carbon economy and environmental protection. However, so far, there is no efficient and easy solution for human beings, and a large amount of carbon dioxide can only be collected and buried underground. Taking titanium dioxide photocatalysis as an example, although the titanium dioxide photocatalysis material can convert a mixture of carbon dioxide and water into a mixture of methane, methanol and carbon monoxide under the irradiation of ultraviolet light to realize reduction of the carbon dioxide, the titanium dioxide photocatalysis material can only absorb ultraviolet rays in sunlight, so that the conversion efficiency is low, and the titanium dioxide photocatalysis material is not practical.
Disclosure of Invention
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for reducing carbon dioxide by friction catalysis of a semiconductor powder, wherein carbon dioxide in an aqueous solution is subjected to a series of reduction reactions to produce carbon monoxide and methane by the friction catalysis effect of the semiconductor powder.
In order to achieve the above object, the present invention adopts the following scheme:
the invention provides a carbon dioxide reduction method based on semiconductor powder friction catalysis, which is characterized by comprising the following steps of: and adding the semiconductor powder with friction catalysis performance and the organic friction material into the solution in which the carbon dioxide is dissolved, so that the semiconductor powder and the organic friction material rub against each other, and the carbon dioxide in the solution is reduced into carbon monoxide and methane.
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the invention can also have the following characteristics: the semiconductor powder is oxide semiconductor powder or non-oxide semiconductor powder.
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the invention can also have the following characteristics: the friction medium is as follows: the organic friction material is a magneton or a particle coated with a polymer material coating on the surface.
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the invention can also have the following characteristics: the high polymer material coating is a Teflon coating.
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the invention can also have the following characteristics: the operating temperature was room temperature.
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the invention can also have the following characteristics: the solution in which carbon dioxide is dissolved is a sodium chloride solution.
Effects and effects of the invention
The invention firstly realizes that mechanical energy is used for reducing carbon dioxide, and in an aqueous solution dissolved with carbon dioxide, the semiconductor powder with friction catalysis performance is added and then magnetically stirred with some organic materials, for example, some magnetons with Teflon surfaces (or other polymer material coatings) are added, and carbon dioxide in the solution can be efficiently reduced into methane and carbon monoxide through friction between the semiconductor powder and the Teflon (or other polymer material coatings), so that a brand new scheme is provided for reducing the carbon dioxide.
Detailed Description
Specific embodiments of the method for reducing carbon dioxide by friction catalysis of semiconductor powder according to the present invention will be described in detail below.
Example 1
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the first embodiment comprises the following contents:
a commercially available 100mL flat bottom quartz reactor was used as a reaction vessel, 500 mg of commercially available P25 (titanium dioxide nano-powder) was added, and 50 mL of a sodium chloride solution (concentration: 0.1 mol/L) was added. To the vessel was added a magnetic stirring bar formed by four magnetic stirring bars with teflon surfaces bonded together, and high purity carbon dioxide gas (99.999%) was bubbled for 5 minutes, and finally the whole was sealed with a jig and magnetically stirred at 500 rpm while shading, keeping the room temperature constant at 25 ℃. The gas sample in the container is periodically withdrawn, and the concentration of the reducing gas in the sample is measured by gas chromatography. The results showed that after 24 hours of stirring, the methane concentration was 1.54ppm and the carbon monoxide concentration was 7.13ppm.
< example two >
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the second embodiment comprises the following steps:
a commercially available 100mL flat bottom quartz reactor was used as a reaction vessel, 500 mg of commercially available titanium dioxide micro powder was added, and 50 mL of sodium chloride solution (concentration: 0.1 mol/L) was added. A magnetic stir bar formed by four magnetic stir bars with teflon surfaces bonded together was added to a beaker, and high purity carbon dioxide gas (99.999%) was bubbled for 5 minutes, and finally the entire apparatus was sealed with a jig. Magnetic stirring was carried out at 500 revolutions per minute, while shading, constant room temperature 25 ℃. The gas sample in the container is periodically withdrawn, and the concentration of the reducing gas in the sample is measured by gas chromatography. The results showed that after 24 hours of stirring, the methane concentration was 2.20ppm and the carbon monoxide concentration was 3.27ppm.
Example III
The carbon dioxide reduction method based on the friction catalysis of the semiconductor powder provided by the third embodiment comprises the following steps:
a commercially available 100mL flat bottom quartz reactor was used as a reaction vessel, 1000 mg of a commercially available titanium dioxide micropowder was added, and 50 mL of a sodium chloride solution (concentration: 0.1 mol/L) was added. To the vessel was added a magnetic stirring bar formed by four magnetic stirring bars with teflon surfaces bonded together, and high purity carbon dioxide gas (99.999%) was bubbled for 5 minutes, and finally the whole was sealed with a jig and magnetically stirred at 500 rpm while shading, keeping the room temperature constant at 25 ℃. The gas sample in the container is periodically withdrawn, and the concentration of the reducing gas in the sample is measured by gas chromatography. The results showed that after 24 hours of stirring, the methane concentration was 2.16ppm and the carbon monoxide concentration was 4.9ppm.
The above embodiments are merely illustrative of the technical solutions of the present invention. The method of reducing carbon dioxide based on the friction catalysis of semiconductor powder according to the present invention is not limited to the above embodiments, but is limited to the scope defined by the claims. Any modifications, additions or equivalent substitutions made by those skilled in the art based on this embodiment are within the scope of the invention as claimed in the claims.
Claims (3)
1. A carbon dioxide reduction method based on semiconductor powder friction catalysis is characterized by comprising the following steps:
adding semiconductor powder with friction catalysis performance and organic friction material into solution with carbon dioxide to make the semiconductor powder and the organic friction material rub against each other, reducing carbon dioxide in the solution into carbon monoxide and methane,
the semiconductor powder is titanium dioxide powder, and the organic friction material is a magnet or particulate matter coated with a Teflon coating.
2. The method for reducing carbon dioxide based on friction catalysis of semiconductor powder according to claim 1, wherein:
wherein the operating temperature is room temperature.
3. The method for reducing carbon dioxide based on friction catalysis of semiconductor powder according to claim 1, wherein:
wherein the solution dissolved with carbon dioxide is sodium chloride solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011300518.9A CN114538442B (en) | 2020-11-19 | 2020-11-19 | Carbon dioxide reduction method based on semiconductor powder friction catalysis |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011300518.9A CN114538442B (en) | 2020-11-19 | 2020-11-19 | Carbon dioxide reduction method based on semiconductor powder friction catalysis |
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| CN114538442A CN114538442A (en) | 2022-05-27 |
| CN114538442B true CN114538442B (en) | 2023-06-30 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214337A (en) * | 1998-01-26 | 1999-08-06 | Ricoh Co Ltd | Method for chemical removal induced by friction and apparatus thereof |
| JP2005170780A (en) * | 2003-11-18 | 2005-06-30 | Japan Science & Technology Agency | Apparatus and method of decomposing water and mechanocatalyst for water decomposition |
| CN1657427A (en) * | 2005-02-05 | 2005-08-24 | 南京大学 | Method for catalytic degradating paranitrobenzene substance with nonometer-grade cuprous oxide by mechanism |
| CN101091922A (en) * | 2007-05-25 | 2007-12-26 | 南京大学 | Method for coating copper oxide by Nafion, and removing material in chlorobenzene categories by catalyzing |
| CN109289872A (en) * | 2018-09-05 | 2019-02-01 | 中国计量大学 | A kind of full spectral response carbon dioxide reduction composite photo-catalyst and preparation method thereof |
| CN109850983A (en) * | 2019-04-04 | 2019-06-07 | 武汉大学 | Method of contaminants disposal based on the friction catalysis of semiconductor powder |
| CN111498902A (en) * | 2020-03-20 | 2020-08-07 | 桂林理工大学 | Submicron powder for efficiently degrading dye sewage by using friction catalysis and preparation method thereof |
-
2020
- 2020-11-19 CN CN202011300518.9A patent/CN114538442B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214337A (en) * | 1998-01-26 | 1999-08-06 | Ricoh Co Ltd | Method for chemical removal induced by friction and apparatus thereof |
| JP2005170780A (en) * | 2003-11-18 | 2005-06-30 | Japan Science & Technology Agency | Apparatus and method of decomposing water and mechanocatalyst for water decomposition |
| CN1657427A (en) * | 2005-02-05 | 2005-08-24 | 南京大学 | Method for catalytic degradating paranitrobenzene substance with nonometer-grade cuprous oxide by mechanism |
| CN101091922A (en) * | 2007-05-25 | 2007-12-26 | 南京大学 | Method for coating copper oxide by Nafion, and removing material in chlorobenzene categories by catalyzing |
| CN109289872A (en) * | 2018-09-05 | 2019-02-01 | 中国计量大学 | A kind of full spectral response carbon dioxide reduction composite photo-catalyst and preparation method thereof |
| CN109850983A (en) * | 2019-04-04 | 2019-06-07 | 武汉大学 | Method of contaminants disposal based on the friction catalysis of semiconductor powder |
| CN111498902A (en) * | 2020-03-20 | 2020-08-07 | 桂林理工大学 | Submicron powder for efficiently degrading dye sewage by using friction catalysis and preparation method thereof |
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| CN114538442A (en) | 2022-05-27 |
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