CN114530540B - Color conversion layer and preparation method thereof - Google Patents
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- CN114530540B CN114530540B CN202210154312.2A CN202210154312A CN114530540B CN 114530540 B CN114530540 B CN 114530540B CN 202210154312 A CN202210154312 A CN 202210154312A CN 114530540 B CN114530540 B CN 114530540B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000002096 quantum dot Substances 0.000 claims abstract description 112
- 238000005191 phase separation Methods 0.000 claims abstract description 44
- 239000012071 phase Substances 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000003086 colorant Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 49
- 229910002601 GaN Inorganic materials 0.000 description 38
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 9
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
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Abstract
The invention discloses a color conversion layer and a preparation method thereof, wherein the preparation method comprises the following steps: (1) providing a phase separation structure; (2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure; (3) filling the first quantum dots in the porous structure. The preparation method of the color conversion layer provided by the invention provides a phase separation structure and corrodes the phase separation structure to form a porous structure, and then the porous structure is filled with first quantum dots, if the first quantum dots with the same size are filled, the light with the same color is enhanced, and if two or more than two first quantum dots are filled, the light with different colors can be matched.
Description
Technical Field
The invention relates to the technical field of LED chips, in particular to a color conversion layer and a preparation method thereof.
Background
The LED chip has better energy-saving effect and higher brightness, and is used in various industries of production and life. In the prior art, LED chips are generally made of gallium nitride, and the chips using gallium nitride can only emit blue light and green light, but cannot emit light of other colors, such as red light, so that the application requirements cannot be satisfied. Therefore, when the LED is applied to the display field, the red light chip of the AlInGaP quaternary system is matched to display full-color pictures. However, in small-pitch or micro-pitch LED displays, the cost of producing a flip-chip red light chip with low yield is a large proportion, and the chip is difficult to further shrink, so a color conversion alternative is proposed.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a preparation method of a color conversion layer, which comprises the following steps:
(1) Providing a phase separation structure;
(2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure;
(3) And filling the first quantum dots in the porous structure.
Preferably, in step (1), the preparation of the phase separation structure is as follows:
a substrate is provided, at least a two-phase structure is formed on a surface of the substrate, the two-phase structure comprising a first phase structure and a second phase structure that are phase separable.
Preferably, a GaN film is formed on the surface of the substrate by using a GaN film growth technique, the GaN film has the first phase structure and the second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the gallium liquid phase is removed by etching the GaN film to form the porous structure.
Preferably, the second phase structure is embedded in the first phase structure, the first phase structure is selected from a GaN film, the GaN film is subjected to multiple corrosions, and the corrosions form a pore structure, so that the porous structure is obtained.
Preferably, the second phase structure comprises second quantum dots, and the second phase structure is etched except for the second quantum dots, wherein the second quantum dots remain in the porous structure.
Preferably, the second quantum dot is at least one selected from GaAs quantum dot, inP quantum dot, cdS quantum dot, cdSe quantum dot, cdTe quantum dot, znSe quantum dot, pbS quantum dot, pbSe quantum dot, inAs quantum dot, and InGaN quantum dot.
Preferably, the first phase structure contains first quantum dots, the second phase structure contains second quantum dots, and the second phase structure is etched in a portion except for the second quantum dots, and the second quantum dots remain in the porous structure.
Preferably, an epitaxial film is formed on the surface of the substrate by using a GaN film growth technology through a Ga source, an As source and an N source, then a GaN film embedded with GaAs quantum dots is formed through an epitaxial process or an annealing process, the GaN film is corroded to form the porous structure, and the GaAs quantum dots are contained in the porous structure.
Preferably, an InGaN film with high In content is prepared on the surface of the substrate, and the InGaN film with high In content spontaneously undergoes component phase separation to form the first phase structure and the second phase structure, wherein the first phase structure is low In y Ga 1-y An N phase, the second phase structure is In rich In x Ga 1-x N phase, x>>y, the first phase structure and the second phase structure are mutually embedded in the film in a mode of grains with different sizes in space,
etching the second phase structure to form the porous structure, wherein the porous structure does not contain In or contains In rich In x Ga 1-x N quantum dots.
Correspondingly, the invention also provides a color conversion layer which is prepared by adopting the preparation method.
Compared with the prior art, the invention provides a preparation method of a color conversion layer, provides a phase separation structure and corrodes the phase separation structure to form a porous structure, fills first quantum dots in the porous structure, realizes the enhancement of light with the same color if the first quantum dots with the same size are filled, and can match light with different colors if two or more than two kinds of first quantum dots are filled.
Drawings
Fig. 1 shows a schematic structure of a phase separation structure in embodiment 2 of the color conversion layer of the present invention.
Fig. 2 shows a schematic structural diagram of the phase separation structure of fig. 1 after corrosion to form a porous structure.
Fig. 3 shows a schematic structure of the filled quantum dots in the porous structure of fig. 2.
Fig. 4 shows a schematic structure of a phase separation structure in embodiment 3 of the color conversion layer of the present invention.
Fig. 5 shows a schematic structural diagram of the phase separation structure of fig. 4 after corrosion to form a porous structure.
Fig. 6 shows a schematic structure diagram of the filled quantum dots in the porous structure of fig. 5.
Fig. 7 shows a schematic structural diagram of the electroluminescent application of embodiment 5 of the color conversion layer of the present invention.
Symbol description:
Detailed Description
In order to describe the technical content, the constructional features, the achieved objects and effects of the present invention in detail, the following description is made in connection with the embodiments and the accompanying drawings.
The invention provides a preparation method of a color conversion layer, which comprises the following steps:
(1) Providing a phase separation structure;
(2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure;
(3) And filling the first quantum dots in the porous structure.
The phase separation structure may be understood as a two-phase separation structure or a multi-phase separation structure, and one of the phases may be etched and removed by a certain technique, such as gas etching, electrochemical etching, solution etching, or the like, but is not limited thereto. The etching may be followed by removing all of one of the phase structures, or may be followed by filling the portion of the phase structure where the quantum dots remain after etching. Further, the phase separation structure has a low crystal quality and a haze surface to facilitate phase separation. Further, the phase separation structure has conductivity, which can be achieved by doping, and the electrical property is n-type or p-type.
The porous structure refers to a groove, a pit and a hole formed by removing a hole formed by one of the phase separation structures or corroding one of the phase separation structures. In the latter case, it is also possible to retain the quantum dots in the phase structure, but it is equally possible to remove the quantum dots, preferably with the quantum dots in a porous structure. Further, the etching mode can be technical means such as gas etching, electrochemical etching, solution etching and the like. In which the gas corrodes, e.g. H 2 、HCL。
By filling the first quantum dots in the porous structure is meant that at least one type of first quantum dots, more preferably 2 or more types of first quantum dots, if two or more types of first quantum dots of different sizes are filled, different colors of light can be obtained. The quantum dots with the same size can be continuously filled, so that the conversion of the light with the same color can be enhanced. Further, the manner of filling the quantum dots may be, but is not limited to, dipping and electric field injection. Still further, the first quantum dot is selected from at least one of cadmium sulfide (CdS) quantum dot, cadmium selenide (CdSe) quantum dot, cadmium telluride (CdTe) quantum dot, zinc selenide (ZnSe) quantum dot, lead sulfide (PbS) quantum dot, lead selenide (PbSe) quantum dot, indium arsenide (InAs) quantum dot, inGaN quantum dot, gaAs quantum dot, inP quantum dot.
Further, providing a substrate, and forming at least two-phase structures on the surface of the substrate, wherein the two-phase structures comprise a first phase structure and a second phase structure which are separated by each other, so as to obtain a phase separation structure. Specifically, in some embodiments, a GaN film is formed on a surface of a substrate by using a GaN film growth technique, where the GaN film has a first phase structure and a second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the gallium liquid phase is removed by etching the GaN film to form a porous structure. Among them, gaN film growth techniques may employ, but are not limited to, HVPE or MOCVD techniques. More preferably, the GaN film surface is a haze to facilitate phase separation, and a large number of V-shaped pits are distributed.
In a preferred embodiment, the second phase structure is embedded in a first phase structure selected from the group consisting of a GaN film, and the GaN film is subjected to multiple etches, the etches forming a pore structure, resulting in a porous structure. In this manner, since the second phase structure is embedded within the first phase structure, the second phase structure may be eroded such that the portion forms a void. More preferably, however, the second phase structure comprises second quantum dots, portions of the second phase structure other than the second quantum dots (e.g., the solution) are removed, the second quantum dots are not etched, and the second quantum dots remain in the porous structure, but it is not excluded that the second quantum dots can be removed from the porous structure. Preferably, the first phase structure contains first quantum dots, the second phase structure contains second quantum dots, and the portions (e.g., solution) of the second phase structure other than the second quantum dots are etched away, and the second quantum dots remain in the porous structure. When the quantum dots are formed in the first phase structure in a specific mode, the first phase structure contains the first quantum dots, the second phase structure contains the second quantum dots, light leakage is reduced, and the color conversion effect is enhanced. Further, the second quantum dot is selected from at least one of GaAs quantum dot, inP quantum dot, cadmium sulfide (CdS) quantum dot, cadmium selenide (CdSe) quantum dot, cadmium telluride (CdTe) quantum dot, zinc selenide (ZnSe) quantum dot, lead sulfide (PbS) quantum dot, lead selenide (PbSe) quantum dot, indium arsenide (InAs) quantum dot, inGaN quantum dot.
It is understood that the manner in which the first quantum dots are formed in the first phase structure is achieved by using GaN film growth techniques in combination with different materials. In one embodiment, an epitaxial film is formed on the surface of a substrate by using a GaN film growth technology through a Ga source, an As source and an N source, then a GaN film embedded with GaAs quantum dots is formed through an epitaxial process or an annealing process, and the GaN film is corroded to form a porous structure which contains the GaAs quantum dots. In another embodiment, an epitaxial film is formed on the surface of the substrate by using a GaN film growth technology through a Ga source, an In source, a P source and an N source, and then a GaN film embedded with InP quantum dots can be formed through an epitaxial process or an annealing process, so that a porous structure is formed by corroding the GaN film, wherein the porous structure contains the InP quantum dots.
In a preferred embodiment, an InGaN film with high In content is prepared on the surface of the substrate, and the InGaN film with high In content spontaneously undergoes component phase separation to form a first phase structure and a second phase structure, wherein the first phase structure is low In y Ga 1-y N phase and In y Ga 1-y N quantum dot, second phase structure is In rich In x Ga 1-x N phase and In-containing x Ga 1-x N quantum dots, x>>y, the first phase structure and the second phase structure are mutually inlaid In the film In a mode of grains with different sizes In space, and the second phase structure is corroded to form a porous structure, wherein the porous structure does not contain In or contains In rich In x Ga 1-x N quantum dots. More preferably 0.3<x<1，0<y<0.2。
In a preferred embodiment, the color conversion layer of the present invention is disposed on an excitation light source, which is an LED or an LD (laser diode), and the quantum dots are excited to emit light by the light source, so that blue light, green light, UV light, or the like can be emitted. In some embodiments, the color conversion layer of the present invention may be flip-chip bonded to the conductive structure by electroluminescence, and an electrode may be formed on one side of the color conversion layer. The conductive structure is provided with an electrode on the side opposite to the color conversion layer, and the side opposite to the color conversion layer is ITO or a semiconductor material with opposite electrical property and same material as the color conversion layer, so as to realize the electric excitation of the quantum dots.
The method of preparing the color conversion layer of the present invention is described in detail below with reference to fig. 1-7 by way of several specific examples.
Example 1
A method of preparing a color conversion layer, comprising the steps of:
(1) Providing a substrate, epitaxially growing a gallium-rich GaN film on the substrate by using an HVPE technology, forming two phases on the GaN film, namely a GaN crystal phase and a gallium liquid phase, wherein the surface of the GaN film is a fog surface and a large number of V-shaped pits (V bits) are distributed on the surface of the GaN film;
(2) Removing liquid-phase gallium by using solution corrosion, and then forming a porous structure by using electrochemical corrosion of the V-shaped pit;
(3) And filling cadmium sulfide (CdS) quantum dots and indium arsenide (InAs) quantum dots in the porous structure in a dipping manner.
Example 2
Referring to fig. 1-3, a method for preparing a color conversion layer includes the steps of:
(1) Providing a substrate 110, and epitaxially growing an InGaN film 120 with high In content on the surface of the substrate 110 by HVPE, wherein the InGaN film 120 with high In content spontaneously generates component phase separation due to high In content to form an In film with low In content y Ga 1-y N phase and In rich In x Ga 1-x N phase, first phase structure 121 is In low In y Ga 1-y N phase and In y Ga 1-y N quantum dot 123, second phase structure 122 is In rich In x Ga 1-x N phase and In x Ga 1-x N quantum dots 124, x>>y, x=0.4, y=0.02, the first phase structure 121 and the second phase structure 122 are embedded in the thin film in the form of grains with different sizes in space, please refer to fig. 1;
(2) Using H 2 Gas etching to remove In rich In x Ga 1-x N phase, forming a porous structure consisting essentially of the first phase structure 121, the porous structure having In therein x Ga 1-x N quantum dot 124, first phase structure 121 itself containing In y Ga 1-y N quantum dots 123, please refer to fig. 2;
(3) The porous structure is filled with cadmium sulfide (CdS) quantum dots 125 by means of electric field injection, please refer to fig. 3.
Example 3
Referring to fig. 4-6, a method for preparing a color conversion layer includes the steps of:
(1) Providing a substrate 110, introducing a Ga source, an As source and an N source in MOCVD to form an epitaxial film 130, and forming a GaN film 140 embedded with GaAs quantum dots 131 by an epitaxial process, please refer to FIG. 4;
(2) Etching the GaN film 140 by electrochemical etching to form a GaN porous structure, wherein GaAs quantum dots 131 are arranged in the porous structure, and the rest of non-etched parts are embedded with the GaAs quantum dots 131, as shown in FIG. 5;
(3) InP quantum dots 133 are filled in the porous structure by electric field injection, please refer to fig. 6.
Example 4
(1) Providing a substrate, simultaneously introducing a Ga source, an In source, a P source and an N source In MOCVD to form an epitaxial film, and forming a GaN film embedded with InP quantum dots through an epitaxial process;
(2) Etching the GaN film through electrochemical etching to form a GaN porous structure, wherein InP quantum dots are arranged in the porous structure, and InP quantum dots are embedded in the rest non-etched parts;
(3) And filling cadmium selenide (CdSe) quantum dots in the porous structure by an electric field injection mode.
Example 5
Referring to fig. 7, in one application of the color conversion layer, the color conversion layer prepared in embodiment 2 is flip-chip bonded to a conductive structure 210, and an electrode 220 is formed on one side of the color conversion layer. The conductive structure 210 has an electrode (not shown) on a surface facing the color conversion layer, and the surface facing the color conversion layer is made of ITO or a semiconductor material with opposite electrical properties to the color conversion layer and the same material, so as to electrically excite the quantum dots.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the scope of the claims, which follow, as defined in the claims.
Claims (7)
1. A method of preparing a color conversion layer, comprising the steps of:
(1) Providing a phase separation structure;
(2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure;
(3) Filling the first quantum dots in the porous structure,
in step (1), the preparation of the phase separation structure is as follows:
providing a substrate, forming at least two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first phase structure and a second phase structure which can be separated from each other,
and forming a GaN film on the surface of the substrate by using a GaN film growth technology, wherein the GaN film is provided with a first phase structure and a second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the gallium liquid phase is removed by etching the GaN film to form the porous structure.
2. The method for producing a color conversion layer according to claim 1, wherein the second phase structure is embedded in the first phase structure, the first phase structure is selected from a GaN film, the GaN film is subjected to a plurality of corrosions, and the corroded portions form a pore structure, thereby obtaining the porous structure.
3. The method of preparing a color conversion layer according to claim 2, wherein the second phase structure comprises second quantum dots, and portions of the second phase structure other than the second quantum dots are etched, the second quantum dots remaining in the porous structure.
4. The method for preparing a color conversion layer according to claim 3, wherein the second quantum dot is at least one selected from GaAs quantum dot, inP quantum dot, cdS quantum dot, cdSe quantum dot, cdTe quantum dot, znSe quantum dot, pbS quantum dot, pbSe quantum dot, inAs quantum dot, and InGaN quantum dot.
5. A method of preparing a color conversion layer, comprising the steps of:
(1) Providing a phase separation structure;
(2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure;
(3) Filling the first quantum dots in the porous structure,
in step (1), the preparation of the phase separation structure is as follows:
providing a substrate, forming at least two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first phase structure and a second phase structure which can be separated from each other,
the first phase structure containing first quantum dots, the second phase structure containing second quantum dots, etching a portion of the second phase structure other than the second quantum dots, the second quantum dots remaining in the porous structure,
and forming an epitaxial film on the surface of the substrate by using a GaN film growth technology through a Ga source, an As source and an N source, forming a GaN film embedded with GaAs quantum dots through an epitaxial process or an annealing process, and corroding the GaN film to form the porous structure, wherein the porous structure contains the GaAs quantum dots.
6. A method of preparing a color conversion layer, comprising the steps of:
(1) Providing a phase separation structure;
(2) Corroding the phase separation structure to enable the phase separation structure to have a porous structure;
(3) Filling the first quantum dots in the porous structure,
in step (1), the preparation of the phase separation structure is as follows:
providing a substrate, forming at least two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first phase structure and a second phase structure which can be separated from each other,
preparing an InGaN film with high In content on the surface of the substrate, wherein the InGaN film with high In content spontaneously generates component phase separation to form the first phase structure and the second phase structure, and the first phase structure is low In y Ga 1-y An N phase, the second phase structure is In rich In x Ga 1-x N phase, x>>y, the first phase structure and the second phase structure are spatially scaledThe crystal grains with different sizes are mutually inlaid in the film,
etching the second phase structure to form the porous structure, wherein the porous structure does not contain In or contains In rich In x Ga 1-x N quantum dots.
7. A color conversion layer produced by the production method according to any one of claims 1 to 6.
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