CN114523736A - 一种应用于散热结构的高性能人工石墨高导膜 - Google Patents
一种应用于散热结构的高性能人工石墨高导膜 Download PDFInfo
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Abstract
本发明提供了一种应用于散热结构的高性能人工石墨高导膜，包括导热层A、导热层B与散热层C；其中散热层C位于人工石墨高导膜的上表面或是下表面，散热层C的外表面设有若干个针状微孔，所述的针状微孔为沉孔，散热层C的内表面通过粘连剂与导热层A或是导热层B的外表面相连。本发明的人工石墨高导膜，通过以石墨烯或是类石墨烯材料为导热材料，并在其上表面覆盖专用的散热层，其中在散热层的表面通过工艺的改进生成若干个微孔结构，以提升散热层与空气的接触面积，在使用时通过与散热风扇相结合，可以极大的增加人工石墨高导膜的散热能力，从而适用于数码3C产品的使用中。
Description
技术领域
本发明涉及一种应用于散热结构的高性能人工石墨高导膜。
背景技术
石墨烯、类石墨烯等新型散热材料，具有热传导效率高，重量轻，造价低廉的优势，如果能够综合利用石墨烯、类石墨烯、人工石墨等材质的的优势，可以有效的提升常见散热结构的整体散热能力。
其中，尤其是在数码3C产品中，利用石墨片的高导能力，可以显著的提升数码产品中芯片的散热能力，从而为运算量更好的芯片的计算提供了良好的运行环境。
天然石墨与聚酰亚胺相堆叠可以获得导热性能更好的人工石墨高导膜，其中再通过优化加工工序，多次升温层叠等工艺可以提升人工石墨高导膜的厚度、宽度以及力学性能，从而能够获得更为广泛的应用领域。
发明内容
为解决现有技术的不足，现提供一种应用于散热结构的高性能人工石墨高导膜。
一种应用于散热结构的高性能人工石墨高导膜，包括导热层A、导热层B与散热层C；
其中散热层C位于人工石墨高导膜的上表面或是下表面，
散热层C的外表面设有若干个针状微孔，所述的针状微孔为沉孔，散热层C的内表面通过粘连剂与导热层A或是导热层B的外表面相连。
导热层A的制作工艺包括以下步骤：
S1、对前驱体进行分切；
S2、对分切后的前驱体进行改性处理，处理完成后进行石墨化；
S3、冷却后至室温，并制备成导热层A。
导热层B的制作工艺包括以下步骤：
S1、将前驱体放置在碳化炉中进行碳化；
S2、碳化完成后，进行石墨化处理，制备为半成品导热层B；
S3、将聚酰胺酸浆料进行调配，加入4'-二氨基二苯醚(ODA)、均苯四甲酸二酐(PMDA)和1,4,5,8-萘四甲酸二酐，并制备成厚度小于24μm的聚酰亚胺薄膜；
S4、进行高温煅烧，制备成厚度小于28μm的石墨烯薄膜；
S5、在石墨烯薄膜上种植金属离子；
S6、在半成品导热层B的上下表面均匀压合一至多层已种植金属离子的石墨烯薄膜；
S7、经涂胶、热压、丝网涂布制备出导热层B。
散热层C的制作工艺包括以下步骤：
S1、在环氧树脂的表面进行粗糙化处理；
S2、配置散热浆料，并均匀涂敷在环氧树脂的表面；
S3、加热让环氧树脂融化以及散热浆料中的易气化物质气化，并在半熔融状态下压合在导热层A或是导热层B的外表面上。
所属的散热浆料包括石墨烯、碳纳米管、纳米碳球和石蜡，易气化物质为石蜡。在高温加热的环境下，石蜡材料迅速气化，从而快速的在散热层C的表面上形成若干个针状微孔，同时由于环氧树脂难以穿破，所以针状微孔为沉孔。
有益效果：
本发明的人工石墨高导膜，通过以石墨烯或是类石墨烯材料为导热材料，并在其上表面覆盖专用的散热层，其中在散热层的表面通过工艺的改进生成若干个微孔结构，以提升散热层与空气的接触面积，在使用时通过与散热风扇相结合，可以极大的增加人工石墨高导膜的散热能力，从而适用于数码3C产品的使用中。
附图说明
图1是散热层的结构示意图。
具体实施方式
为了加深对本发明的理解，下面将结合实施例和附图对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
一种应用于散热结构的高性能人工石墨高导膜，包括导热层A、导热层B与散热层C；
其中散热层C位于人工石墨高导膜的上表面或是下表面，
散热层C的外表面设有若干个针状微孔，所述的针状微孔为沉孔，散热层C的内表面通过粘连剂与导热层A或是导热层B的外表面相连。
导热层A的制作工艺包括以下步骤：
S1、对聚酰亚胺进行分切；
S2、对分切后的前驱体进行改性处理，处理完成后进行石墨化；
S3、冷却后至室温，并制备成导热层A。
导热层B的制作工艺包括以下步骤：
S1、将聚酰亚胺放置在碳化炉中进行碳化；
S2、碳化完成后，进行石墨化处理，制备为半成品导热层B；
S3、将聚酰胺酸浆料进行调配，加入4'-二氨基二苯醚(ODA)、均苯四甲酸二酐(PMDA)和1,4,5,8-萘四甲酸二酐，并制备成厚度小于24μm的聚酰亚胺薄膜；
S4、进行高温煅烧，制备成厚度小于28μm的石墨烯薄膜；
S5、在石墨烯薄膜上种植金属离子；
S6、在半成品导热层B的上下表面均匀压合一至多层已种植金属离子的石墨烯薄膜；
S7、经涂胶、热压、丝网涂布制备出导热层B。
散热层C的制作工艺包括以下步骤：
S1、在环氧树脂的表面进行粗糙化处理；
S2、配置散热浆料(包括石墨烯、碳纳米管、纳米碳球和石蜡)并均匀涂敷在环氧树脂的表面；
S3、加热让环氧树脂融化以及散热浆料中的易气化物质气化，并在半熔融状态下压合在导热层A或是导热层B的外表面上。
本人工石墨高导膜结构可以适用于绝大多数体积较小、散热量较大的数码产品的使用，可以极大的满足数码产品中芯片的散热需求。其中导热层A或是导热层B可以根据实际需要添加，具体的来说导热层A的散热能力集中在纵向导热能力，且成本较低，而导热层B除了纵向导热能力之外还有卓越的层间导热能力，但是成本较高且厚度较厚。
可以根据实际需求选择导热层A与导热层B的种类以及层数，并在最外层复压一层散热层C即可实现人工石墨高导膜的结构堆积。
作为进一步改进，以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种应用于散热结构的高性能人工石墨高导膜，其特征在于，包括导热层A、导热层B与散热层C；
其中散热层C位于人工石墨高导膜的上表面或是下表面，
散热层C的外表面设有若干个针状微孔，所述的针状微孔为沉孔，散热层C的内表面通过粘连剂与导热层A或是导热层B的外表面相连。
2.根据权利要求1所述的一种应用于散热结构的高性能人工石墨高导膜，其特征在于，导热层A的制作工艺包括以下步骤：
S1、对前驱体进行分切；
S2、对分切后的前驱体进行改性处理，处理完成后进行石墨化；
S3、冷却后至室温，并制备成导热层A。
3.根据权利要求1所述的一种应用于散热结构的高性能人工石墨高导膜，其特征在于，导热层B的制作工艺包括以下步骤：
S1、将前驱体放置在碳化炉中进行碳化；
S2、碳化完成后，进行石墨化处理，制备为半成品导热层B；
S3、将聚酰胺酸浆料进行调配，加入4'-二氨基二苯醚(ODA)、均苯四甲酸二酐(PMDA)和1,4,5,8-萘四甲酸二酐，并制备成厚度小于24μm的聚酰亚胺薄膜；
S4、进行高温煅烧，制备成厚度小于28μm的石墨烯薄膜；
S5、在石墨烯薄膜上种植金属离子；
S6、在半成品导热层B的上下表面均匀压合一至多层已种植金属离子的石墨烯薄膜；
S7、经涂胶、热压、丝网涂布制备出导热层B。
4.根据权利要求1所述的一种应用于散热结构的高性能人工石墨高导膜，其特征在于，散热层C的制作工艺包括以下步骤：
S1、在环氧树脂的表面进行粗糙化处理；
S2、配置散热浆料，并均匀涂敷在环氧树脂的表面；
S3、加热让环氧树脂融化以及散热浆料中的易气化物质气化，并在半熔融状态下压合在导热层A或是导热层B的外表面上。
5.根据权利要求4所述的一种应用于散热结构的高性能人工石墨高导膜，其特征在于，所属的散热浆料包括石墨烯、碳纳米管、纳米碳球和石蜡，易气化物质为石蜡。
6.根据权利要求4所述的一种应用于散热结构的高性能人工石墨高导膜，其特征在于，所述的散热层的表面设有若干个针状微孔。
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