CN114507839B - CMAS erosion resistant thermal barrier coating material and preparation process thereof - Google Patents
CMAS erosion resistant thermal barrier coating material and preparation process thereof Download PDFInfo
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- CN114507839B CN114507839B CN202011168305.5A CN202011168305A CN114507839B CN 114507839 B CN114507839 B CN 114507839B CN 202011168305 A CN202011168305 A CN 202011168305A CN 114507839 B CN114507839 B CN 114507839B
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- 239000012720 thermal barrier coating Substances 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 title claims abstract description 22
- 230000003628 erosive effect Effects 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000576 coating method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 238000005488 sandblasting Methods 0.000 claims description 39
- 238000005507 spraying Methods 0.000 claims description 31
- 238000005240 physical vapour deposition Methods 0.000 claims description 27
- 239000000843 powder Substances 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 23
- 238000005524 ceramic coating Methods 0.000 claims description 20
- 239000004576 sand Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- 229910000601 superalloy Inorganic materials 0.000 claims description 15
- 229910052593 corundum Inorganic materials 0.000 claims description 14
- 239000010431 corundum Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 4
- 238000005328 electron beam physical vapour deposition Methods 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005422 blasting Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- 239000002184 metal Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 46
- 229910045601 alloy Inorganic materials 0.000 description 27
- 239000000956 alloy Substances 0.000 description 27
- 229910052759 nickel Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000001816 cooling Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 208000013641 Cerebrofacial arteriovenous metameric syndrome Diseases 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910018967 Pt—Rh Inorganic materials 0.000 description 1
- 229910002790 Si2N2O Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005049 combustion synthesis Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/073—Metallic material containing MCrAl or MCrAlY alloys, where M is nickel, cobalt or iron, with or without non-metal elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/137—Spraying in vacuum or in an inert atmosphere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Abstract
The invention relates to a CMAS erosion resistant thermal barrier coating material and a preparation method thereof, wherein a substrate sequentially comprises a bonding layer, a YSZ ceramic layer and a silicon oxynitride self-damaged coating from bottom to top, wherein the thickness of the self-damaged coating is 30-80 mu m, the porosity is 15-20%, and the self-damaged coating is composed of Si 2 N 2 O particles with the particle size range of 1.2-10 μm; the total thickness of the thermal barrier coating material is 140-260 mu m. Self-damaged coating Si 2 N 2 O reacts strongly with CMAS to form dense products, isolating CMAS from the coating to prevent further attack of CMAS on the deep coating and metal substrate, and Si 2 N 2 Low O density (2.81 g/cm) 3 ) The coating has light weight and good bonding property with YSZ coating, and is suitable for being used in aircrafts.
Description
Technical Field
The invention relates to a thermal barrier coating material, in particular to a preparation process of a CMAS erosion resistant thermal barrier coating material.
Background
During operation of an aircraft, particulates such as dust, volcanic ash, gravel, etc. are inevitably taken in from the air, and these particulates can deposit on the hot end components of the engine, melt at high temperatures and corrode the thermal barrier coating, resulting in thermal barrier coating performanceReduced or even directly disabled. Studies of deposits on failed engines have shown that these deposits consist primarily of CaO, mgO, al 2 O 3 、SiO 2 Four component composition, such powder deposit corrosion is also referred to as CMAS corrosion. On one hand, CMAS adsorbed and deposited on the surface of the hot end component easily causes the blockage of air film cooling holes on the surface of the hot end component, reduces the cooling effect, and further changes the temperature field and the stress field of the component; on the other hand, the molten CMAS permeates into the thermal barrier coating at high temperature, so that sintering and phase change instability of the coating are accelerated, and the service life and the heat insulation performance of the thermal barrier coating are greatly reduced.
The ability of different types of thermal barrier coating materials to resist CMAS erosion varies greatly. For the YSZ thermal barrier coating material widely applied at present, as CN110791734A discloses a preparation method of a thermal barrier coating of a turbine working blade, an MCrAlY bottom layer and a YSZ ceramic surface layer are prepared on a low-pressure turbine working blade, and the quality consistency and stability of the coating are good; CN111005023a discloses a thermal barrier coating resistant to molten CMAS corrosion, a MAX phase protective layer is prepared on the YSZ ceramic layer; US2005112381a discloses a protective layer for a silicon substrate comprising a diffusion preventing layer, an oxidation preventing layer, a barrier layer and a thermal barrier coating, wherein silicon oxynitride may be used as the diffusion preventing layer. However, CMAS in the high temperature molten state still causes severe erosion of YSZ coatings, rooted in the chemical compatibility of the two. At high temperature, CMAS is in a molten state and has certain fluidity, and can infiltrate into grain boundaries and pores inside the coating along microcracks in the coating. At the interface with CMAS, two components Y in YSZ 2 O 3 And ZrO(s) 2 Can be dissolved into the molten CMAS, so that the grain boundary and the pore which are infiltrated into the CMAS in the YSZ are not widened, a wider channel is formed, and the CMAS is facilitated to continuously invade into the coating. While lower Y in YSZ 2 O 3 Content and Y 2 O 3 The higher solubility in CMAS changes the components of the YSZ thermal barrier coating eroded by the CMAS, the phase stability of the material is greatly reduced, and the ZrO is generated 2 The transformation from tetragonal phase to monoclinic phase is accompanied by a 5% volume expansion, and the induced stress causes the YSZ coating to be internally coatedThe portion developed a number of cracks, eventually leading to spalling of the coating. Therefore, it is necessary to pre-form a layer of self-damaged coating on the surface of the thermal barrier coating, the coating material reacts with CMAS severely, elements of the CMAS are changed by dissolving into the molten CMAS, and new phases are crystallized and separated out of the CMAS by changing the elements, so that a barrier layer is formed to prevent the CMAS from going deeper into the coating, and the effect that the CMAS do not contact the blade is achieved.
Disclosure of Invention
The invention provides a CMAS erosion resistant thermal barrier coating material and a preparation process thereof, and the self-damaged coating is arranged, so that the self-damaged coating material and CMAS react vigorously to form a compact layer, a product can be tightly adhered to the surface of the coating, further erosion of the material by molten CMAS is effectively prevented, and excellent CMAS resistance is shown.
The main technical scheme of the invention is as follows:
a CMAS erosion resistant thermal barrier coating material characterized by comprising, on a superalloy substrate, in order from bottom to top: a bonding layer (1), a YSZ ceramic coating (2) and a self-damaged coating (3); the thickness of the self-damaged coating is 30-80 mu m, the porosity is 15-20%, and the self-damaged coating is made of Si 2 N 2 O particles with the particle size range of 1.2-10 μm; the total thickness of the thermal barrier coating material is 140-260 mu m.
Further, the thickness of the YSZ ceramic coating is 50-120 mu m; wherein the YSZ ceramic is made of ZrO 2 +6-8wt%Y 2 O 3 Composition;
further, the bonding layer is an MCrAlY layer, wherein M is at least one of Fe, co and Ni, and Y is selected from rare earth elements; the thickness of the bonding layer is 30-100 mu m;
further, the Si is 2 N 2 The O particles comprise first Si 2 N 2 O particles, second Si 2 N 2 O particles and third Si 2 N 2 O particles of the first Si 2 N 2 The particle size of the O particles is in the range of 1.2-2.5 mu m; the second Si 2 N 2 The O particles are in the range of 3.5-5.5 μm; third Si 2 N 2 The particle size of the O particles is in the range of 8-10 mu m; wherein the first isSi 2 N 2 O particles, second Si 2 N 2 O particles and third Si 2 N 2 The number ratio of O particles was 2:1:1.
Further, the Si is 2 N 2 The O particles are lamellar.
Further, the superalloy substrate is selected from a nickel-based alloy, an iron-based alloy, or a cobalt-based alloy.
The invention also provides a preparation process of the CMAS erosion resistant thermal barrier coating material, which mainly comprises the following steps:
(1) Providing a superalloy substrate: selecting a superalloy substrate, and carrying out surface pretreatment on the surface of the superalloy substrate;
(2) Prefabricating a bonding layer: prefabricating a layer of bonding layer on the surface of the superalloy substrate by adopting plasma spraying physical vapor deposition ps-pvc or electron beam physical vapor deposition eb-pvc;
(3) Heat treatment and sand blowing treatment of the bonding layer: pre-oxidizing the super alloy substrate with the bonding layer at 1000-1100 ℃ for 2 hours; then carrying out sand blowing treatment;
(4) Preparing a YSZ ceramic layer: preparing a YSZ ceramic coating on the surface of the bonding layer by adopting plasma spraying physical vapor deposition ps-pvc or electron beam physical vapor deposition eb-pvc;
(5) Preparing the self-damaged coating by a plasma spraying physical vapor deposition method: mixing three Si2N2O powders with particle diameters of 1.2-2.5 μm, 3.5-5.5 μm, 8-10 μm and 1.2-10 μm and porosities of 15% -20% uniformly in a ratio of 3:7-7:32:1:1. And spraying a self-damaged coating on the surface of the YSZ ceramic coating by using a PS-PVD process, wherein the thickness is 30-80 mu m.
Further, the pretreatment in the step (1) comprises roughening treatment, surface cleaning treatment and polishing treatment; the roughening treatment is preferably carried out by adopting 46# brown corundum sand for sand blasting, the sand blasting air pressure is 0.3-0.5MPa, the sand blasting distance is 150-200mm, and then a brush is used for cleaning the residual gravel; the surface cleaning treatment adopts alcohol to carry out ultrasonic cleaning on the surface, and compressed air is used for drying after the cleaning; the polishing treatment is to polish the substrate to make the surface roughness less than or equal to 3 mu m.
Further, in the step (3), the sand blasting treatment is preferably performed by adopting 46# brown corundum sand, the sand blasting air pressure is 0.2-0.25MPa, the sand blasting distance is 150-200mm, and then the residual gravel is cleaned by a brush.
Further, the Si in step (5) 2 N 2 O powder of Si and SiO 2 As raw material, under high pressure N 2 The method is synthesized by adopting a combustion synthesis method; preferably the Si 2 N 2 The purity of the O powder is more than 99.9 percent.
Further, the ps-pvd in the step (2) and the step (4) preferably has a spraying power of 25-80KW, a spraying current of 1000-2200A, a vacuum chamber pressure of less than 1mbar, an argon gas flow of 20-50slpm, a helium gas flow of 10-15slpm, and a spraying distance of 800-1000mm.
Further, the eb-pvd in step (2) and step (4) is preferably a vacuum of less than 10 -3 Pa, deposition rate of 1.2-1.5 μm/min, substrate rotation speed of 6-10 rpm, and deposition time determined by coating thickness and deposition rate.
Further, the PS-PVD in step (5) preferably has a spray current of 1800-2600A, an argon gas flow of 40-70slpm, a helium gas flow of 60slpm, an oxygen gas flow of 0-2slpm, and a torch speed of 1000 mm.s -1 The spraying distance was 950mm.
Performing CMAS erosion resistance experiments on the thermal barrier coating of the superalloy substrate: placing prefabricated CMAS particles in the center of a substrate, placing the prefabricated CMAS particles together on an alumina porcelain boat, placing the alumina porcelain boat into a high-temperature contact angle tester, heating to 1000 ℃ at the speed of 10 ℃/min, heating to 1400 ℃ at the speed of 2.5 ℃/min, preserving heat for 1h, cooling to 1000 ℃ at the speed of 2.5 ℃/min, and naturally cooling to room temperature; in the CMAS erosion resistance experiment process, during the heating, heat preservation and cooling processes, the temperature of the sample is monitored in real time by using a Pt-Rh thermocouple, and the shape change of the sample is monitored in situ by using an image processing system. It can be seen that CMAS particles react vigorously with the substrate to form Si-rich CAMS and nitrogen, as in fig. 1, by directly observing the high temperature wetting reaction process, the reaction product adheres tightly to the substrate coating surface, about 10-20 μm, the reaction layer thickness is thin, and further attack of the substrate material by molten CMAS is effectively prevented, so that it exhibits excellent CMAS resistance.
The thermal barrier coating material of the invention is formed by adding a layer of silicon oxynitride self-damaged coating on the YSZ ceramic coating, and the double ceramic CMAS erosion resistant layer is formed because the silicon oxynitride has stable high temperature performance and low density (2.81 g/cm) 3 ) The ceramic material has the advantages of light weight, good bonding performance with YSZ ceramic, excellent CMAS resistance, and thin compact layer thickness formed by reaction with CMAS particles, and can effectively prevent the corrosion of the molten CMAS on the superalloy substrate. Meanwhile, in order to further improve the performance of the silicon oxynitride ceramic coating and improve the uniformity and the microcosmic appearance of powder particle distribution, the particle size distribution of the silicon oxynitride ceramic particles refers to a Horsfield model, the particle size is reasonably configured, and the porosity of the coating can be adjusted. If the porosity is too large, the compact layer cannot be formed by reacting with CMAS; if the porosity is too small, the amount of raw materials used is large, and the cost increases.
Drawings
The following describes the embodiments of the present invention in further detail with reference to the drawings.
FIG. 1 is a schematic diagram of a thermal barrier coating layer structure.
FIG. 2 lamellar Si 2 N 2 Microscopic morphology of the O material.
Fig. 3 is a graph of CMAS particles/melt morphology change on a substrate during high temperature.
Figure 4 is a graph of cmas particle erosion interface microtopography.
Detailed Description
In order to more clearly illustrate the present invention, the present invention will be further described with reference to preferred embodiments and the accompanying drawings. Like parts in the drawings are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and that this invention is not limited to the details given herein.
(1) The prefabricated silicon oxynitride powder adopts silicon powder and silicon oxide powder, ammonium chloride particles are used as additives, lamellar silicon oxynitride powder is synthesized by burning in nitrogen atmosphere, and the raw material proportion and the reaction atmosphere are shown in the following table:
Si(g) | SiO 2 (g) | NH 4 Cl(g) | P(N2) |
56 | 40 | 4 | 1MPa |
under the above conditions, silicon oxynitride powder with particle size distribution of 1.2-2.5 μm can be obtained, and NH is regulated 4 The silicon oxynitride powder with the Cl content of 2g and 0g can be obtained with two particle size distributions of 3.5-5.5 mu m and 8-10 mu m, thereby preparing the silicon oxynitride self-damaged coating with the porosity of 15-20%.
(2) Prefabricated CMAS granules, using CaO, mgO, al 2 O 3 、SiO 2 Weighing and uniformly mixing according to the proportion in the table, heating to 1500 ℃, preserving heat for 4 hours, and cooling along with a furnace to prepare a large amount of CMAS for subsequent experiments.
Composition of the components | CaO(g) | MgO(g) | Al 2 O 3 (g) | SiO 2 (g) |
Quality of | 17.6 | 8.8 | 41.6 | 132 |
Example 1
Firstly, selecting a nickel-based alloy substrate, carrying out sand blasting coarsening treatment on the surface of the nickel-based alloy substrate by adopting 46# brown corundum sand, wherein the sand blasting air pressure is 0.3MPa, the sand blasting distance is 150mm, cleaning residual gravel by using a brush, carrying out ultrasonic cleaning on the surface by using alcohol, and drying by using compressed air after cleaning; and then polishing the substrate to obtain the surface roughness of 3 mu m.
And secondly, depositing a NiCrAlY bonding layer on the surface of the treated nickel-based alloy substrate in a ps-PVD mode, wherein the composition of NiCrAlY alloy powder elements is 69wt% of Ni, 20wt% of Cr, 10wt% of Al and 1wt% of Y, the spraying power is set to be 30KW, the spraying current is 1000A, the pressure of a vacuum chamber is lower than 1mbar, the argon gas flow is 20slpm, the helium gas flow is 15slpm, the spraying distance is 800mm, and the NiCrAlY bonding layer with the thickness of 30 mu m is obtained on the surface of the nickel-based alloy substrate.
Step three, the adhesive layer is pre-oxidized for 2 hours at 1050 ℃; then adopting 46# brown corundum sand to carry out sand blasting treatment, wherein the sand blasting air pressure is 0.2MPa, the sand blasting distance is 150mm, and cleaning the residual gravel by using a hairbrush.
Step four, adopting PS-PVD to deposit a 60 mu m-thick YSZ ceramic coating on the surface of the NiCrAlY bonding layer, wherein the YSZ ceramic coating is formed by ZrO 2 +7%Y 2 O 3 The deposition process parameter settings are consistent with the bonding layer.
Step five, selecting silicon oxynitride powder according to a Horsfield model, wherein the silicon oxynitride powder is 1.2-2.5 mu mSi 2 N 2 50mol% of O particles, 3.5-5.5 mu mSi 2 N 2 25mol% of O particles, 8-10 mu mSi 2 N 2 O particles 25mol%. Spraying by using a PS-PVD process, wherein the spraying current is 1800A, the argon gas flow is 40slpm, the helium gas flow is 60slpm, the oxygen gas flow is 0slpm, and the gun running speed is 1000mm & s -1 The spraying distance is 950mm, and the silicon oxynitride self-damaged coating with the porosity of 15.8 percent and the thickness of 60 mu m is obtained.
And step six, through a high-temperature contact angle test, the reaction thickness of the CMAS particles and the substrate is 20 mu m, so that a compact reaction layer is formed, and the CMAS erosion can be resisted.
Example 2
Firstly, selecting a nickel-based alloy substrate, carrying out sand blasting coarsening treatment on the surface of the nickel-based alloy substrate by adopting 46# brown corundum sand, wherein the sand blasting air pressure is 0.5MPa, the sand blasting distance is 200mm, cleaning residual gravel by using a brush, carrying out ultrasonic cleaning on the surface by using alcohol, and drying by using compressed air after cleaning; and then the substrate is subjected to grinding and polishing treatment, and the surface roughness is detected to be 2.5 mu m.
And secondly, depositing a NiCrAlHf bonding layer on the surface of the processed nickel-based alloy substrate in a ps-PVD mode, wherein the NiCrAlHf alloy powder comprises 65wt% of Ni, 23wt% of Cr, 10wt% of Al and 2wt% of Hf, the spraying power is set to be 50KW, the spraying current is set to be 1800A, the pressure of a vacuum chamber is lower than 1mbar, the argon gas flow rate is 35slpm, the helium gas flow rate is 10slpm, the spraying distance is 900mm, and the NiCrAlHf bonding layer with the thickness of 65 mu m is obtained on the surface of the nickel-based alloy.
Step three, the bonding layer is pre-oxidized for 2 hours at 1100 ℃; then 46# brown corundum sand is adopted for sand blasting treatment, the sand blasting air pressure is 0.25MPa, the sand blasting distance is 150mm, and a brush is used for cleaning the residual gravel.
Step four, adopting PS-PVD to deposit a YSZ ceramic coating with the thickness of 100 mu m on the surface of the NiCrAlHf bonding layer, wherein the YSZ ceramic coating is formed by ZrO 2 +6%Y 2 O 3 The deposition process parameter settings are consistent with the bonding layer.
Step five, selecting silicon oxynitride powder according to a Horsfield model, wherein the silicon oxynitride powder is 1.2-2.5 mu mSi 2 N 2 50mol% of O particles, 3.5-5.5 mu mSi 2 N 2 25mol% of O particles, 8-10 mu mSi 2 N 2 O particles 25mol%. Spraying by using a PS-PVD process, wherein the spraying current is 1900A, the argon gas flow is 55slpm, the helium gas flow is 60slpm, the oxygen gas flow is 1slpm, and the gun running speed is 1000mm & s -1 The spraying distance is 950mm, and the silicon oxynitride self-damaged coating with the porosity of 17.4 percent and the thickness of 78 mu m is obtained.
And step six, through a high-temperature contact angle test, the reaction thickness of the CMAS particles and the substrate is 15 mu m, so that a compact reaction layer is formed, and the CMAS erosion can be resisted.
Example 3
Firstly, selecting a nickel-based alloy substrate, carrying out sand blasting coarsening treatment on the surface of the nickel-based alloy substrate by adopting 46# brown corundum sand, wherein the sand blasting air pressure is 0.5MPa, the sand blasting distance is 200mm, cleaning residual gravel by using a brush, carrying out ultrasonic cleaning on the surface by using alcohol, and drying by using compressed air after cleaning; and then the substrate is subjected to grinding and polishing treatment, and the surface roughness is detected to be 2.5 mu m.
And secondly, depositing a NiCrAlHf bonding layer on the surface of the processed nickel-based alloy substrate in a ps-PVD mode, wherein the NiCrAlHf alloy powder comprises 65wt% of Ni, 23wt% of Cr, 10wt% of Al and 2wt% of Hf, the spraying power is 80KW, the spraying current is 2200A, the vacuum chamber pressure is lower than 1mbar, the argon gas flow is 50slpm, the helium gas flow is 15slpm, the spraying distance is 1000mm, and the NiCrAlHf bonding layer with the thickness of 100 mu m is obtained on the surface of the nickel-based alloy substrate.
Step three, the bonding layer is pre-oxidized for 2 hours at 1000 ℃; then 46# brown corundum sand is adopted for sand blasting treatment, the sand blasting air pressure is 0.25MPa, the sand blasting distance is 200mm, and a brush is used for cleaning the residual gravel.
Step four, depositing a YSZ ceramic coating with the thickness of 120 mu m on the surface of the NiCrAlHf bonding layer by adopting PS-PVD, wherein the YSZ ceramic coating is formed by ZrO 2 +8%Y 2 O 3 The deposition process parameter settings are consistent with the bonding layer.
Step five, selecting silicon oxynitride powder according to a Horsfield model, wherein the silicon oxynitride powder is 1.2-2.5 mu mSi 2 N 2 O particle50mol% of particles, 3.5-5.5 mu mSi 2 N 2 25mol% of O particles, 8-10 mu mSi 2 N 2 O particles 25mol%. Spraying by using a PS-PVD process, wherein the spraying current is 2200A, the argon gas flow is 60slpm, the helium gas flow is 60slpm, the oxygen gas flow is 1slpm, and the gun running speed is 1000mm & s -1 The spraying distance is 950mm, and the silicon oxynitride self-damaged coating with the porosity of 19% and the thickness of 38 μm is obtained.
And step six, through a high-temperature contact angle test, the reaction thickness of the CMAS particles and the substrate is 10 mu m, so that a compact reaction layer is formed, and the CMAS erosion can be resisted.
Example 4
Firstly, selecting a nickel-based alloy substrate, carrying out sand blasting coarsening treatment on the surface of the nickel-based alloy substrate by adopting 46# brown corundum sand, wherein the sand blasting air pressure is 0.4MPa, the sand blasting distance is 200mm, cleaning residual gravel by using a brush, carrying out ultrasonic cleaning on the surface by using alcohol, and drying by using compressed air after cleaning; and then the substrate is subjected to grinding and polishing treatment, and the surface roughness is detected to be 2.7 mu m.
Depositing a NiCoCrAlHf bonding layer on the surface of the treated nickel-base alloy substrate in an eb-PVD mode, wherein the NiCrAlHf alloy powder comprises 10wt% of Ni, 23wt% of Cr, 10wt% of Al, 2wt% of Hf and the balance of Ni; setting the vacuum degree to be less than 10 -3 Pa, the deposition rate is 1.2 mu m/min, the matrix rotation speed is 10rpm, and a NiCoCrAlHf bonding layer with the thickness of 40 mu m is obtained on the surface of the nickel-based alloy.
Step three, the bonding layer is pre-oxidized for 2 hours at 1100 ℃; then adopting 46# brown corundum sand to carry out sand blasting treatment, wherein the sand blasting air pressure is 0.2MPa, the sand blasting distance is 150mm, and cleaning the residual gravel by using a hairbrush.
Depositing a YSZ ceramic coating with the thickness of 50 mu m on the surface of the NiCoCrAlHf bonding layer by adopting eb-PVD, wherein the YSZ ceramic coating is composed of ZrO 2 +6%Y 2 O 3 The deposition process parameter settings are consistent with the bonding layer.
Step five, selecting silicon oxynitride powder according to a Horsfield model, wherein the silicon oxynitride powder is 1.2-2.5 mu mSi 2 N 2 50mol% of O particles, 3.5-5.5 mu mSi 2 N 2 O particles 25mol%,8-10μmSi 2 N 2 O particles 25mol%. Spraying by using a PS-PVD process, wherein the spraying current is 2100A, the argon gas flow is 65slpm, the helium gas flow is 60slpm, the oxygen gas flow is 2slpm, and the gun running speed is 1000mm & s -1 The spraying distance is 950mm, and the silicon oxynitride self-damaged coating with the porosity of 18.3 percent and the thickness of 52 mu m is obtained.
And step six, through a high-temperature contact angle test, CMAS particles react with the substrate to form a compact reaction layer with the thickness of 18 mu m, so that CMAS erosion can be resisted.
Example 5
Firstly, selecting a nickel-based alloy substrate, carrying out sand blasting coarsening treatment on the surface of the nickel-based alloy substrate by adopting 46# brown corundum sand, wherein the sand blasting air pressure is 0.4MPa, the sand blasting distance is 200mm, cleaning residual gravel by using a brush, carrying out ultrasonic cleaning on the surface by using alcohol, and drying by using compressed air after cleaning; and then the substrate is subjected to grinding and polishing treatment, and the surface roughness is detected to be 2.7 mu m.
Depositing a NiCoCrAlHf bonding layer on the surface of the treated nickel-base alloy substrate in an eb-PVD mode, wherein the NiCrAlHf alloy powder comprises 10wt% of Ni, 23wt% of Cr, 10wt% of Al, 2wt% of Hf and the balance of Ni; setting the vacuum degree to be less than 10 -3 Pa, the deposition rate is 1.5 mu m/min, the matrix rotating speed is 6rpm, and the NiCoCrAlHf bonding layer with the thickness of 60 mu m is obtained on the surface of the nickel-based alloy.
Step three, the bonding layer is pre-oxidized for 2 hours at 1100 ℃; then adopting 46# brown corundum sand to carry out sand blasting treatment, wherein the sand blasting air pressure is 0.2MPa, the sand blasting distance is 150mm, and cleaning the residual gravel by using a hairbrush.
Step four, adopting eb-PVD to deposit a YSZ ceramic coating with the thickness of 80 mu m on the surface of the NiCoCrAlHf bonding layer, wherein the YSZ ceramic coating is formed by ZrO 2 +6%Y 2 O 3 The deposition process parameter settings are consistent with the bonding layer.
Step five, selecting silicon oxynitride powder according to a Horsfield model, wherein the silicon oxynitride powder is 1.2-2.5 mu mSi 2 N 2 50mol% of O particles, 3.5-5.5 mu mSi 2 N 2 25mol% of O particles, 8-10 mu mSi 2 N 2 O particles 25mol%. Using a PS-PVD processSpraying, wherein the spraying current is 2600A, the argon gas flow is 70slpm, the helium gas flow is 60slpm, the oxygen gas flow is 0slpm, and the gun speed is 1000mm & s -1 The spraying distance is 950mm, and the silicon oxynitride self-damaged coating with the porosity of 19.7 percent and the thickness of 47 mu m is obtained.
And step six, through a high-temperature contact angle test, the reaction thickness of the CMAS particles and the substrate is 17 mu m, so that a compact reaction layer is formed, and the CMAS erosion can be resisted.
Claims (7)
1. The preparation process of the CMAS erosion resistant thermal barrier coating material is characterized by mainly comprising the following steps of:
(1) Providing a superalloy substrate: selecting a superalloy substrate, and carrying out surface pretreatment on the surface of the superalloy substrate;
(2) Prefabricating a bonding layer: prefabricating a layer of bonding layer on the surface of the superalloy substrate by adopting plasma spraying physical vapor deposition ps-pvc or electron beam physical vapor deposition eb-pvc;
(3) Heat treatment and sand blowing treatment of the bonding layer: pre-oxidizing the super alloy substrate with the bonding layer at 1000-1100 ℃ for 2 hours; then carrying out sand blowing treatment;
(4) Preparing a YSZ ceramic layer: preparing a YSZ ceramic coating on the surface of the bonding layer by adopting plasma spraying physical vapor deposition ps-pvc or electron beam physical vapor deposition eb-pvc;
(5) Preparing the self-damaged coating by a plasma spraying physical vapor deposition method: three Si with particle diameters of 1.2-2.5 μm, 3.5-5.5 μm, and 8-10 μm respectively 2 N 2 The O powder is uniformly mixed according to the mol ratio of 2:1:1; spraying a self-damaged coating on the surface of the YSZ ceramic coating by using a PS-PVD process, wherein the thickness is 30-80 mu m; the PS-PVD spraying current is 1800-2600A, the argon gas flow is 40-70slpm, the helium gas flow is 60slpm, the oxygen gas flow is 0-2slpm, the gun speed is 1000mm s-1, and the spraying distance is 950mm.
2. The manufacturing process according to claim 1, wherein the pretreatment in step (1) includes roughening treatment, surface cleaning treatment, and polishing treatment; the coarsening treatment adopts 46# brown corundum sand for sand blasting treatment, the sand blasting air pressure is 0.3-0.5MPa, the sand blasting distance is 150-200mm, and then a brush is used for cleaning the residual gravel; the surface cleaning treatment adopts alcohol to carry out ultrasonic cleaning on the surface, and compressed air is used for drying after the cleaning; the polishing treatment is carried out on the substrate to ensure that the surface roughness is less than or equal to 3 mu m.
3. The process according to claim 1, wherein the blasting treatment in step (3) is performed by using 46# brown corundum sand, the blasting air pressure is 0.2-0.25MPa, the blasting distance is 150-200mm, and then the residual gravel is cleaned by a brush.
4. The process according to claim 1, wherein the PS-PVD spray power in step (2) and step (4) is 25-80KW, spray current is 1000-2200A, vacuum chamber pressure is lower than 1mbar, argon gas flow is 20-50slpm, helium gas flow is 10-15slpm, spray distance is 800-1000mm; the EB-PVD vacuum degree in the step (2) and the step (4) is less than 10 -3 Pa, deposition rate of 1.2-1.5 μm/min, substrate rotation speed of 6-10 rpm, and deposition time determined by coating thickness and deposition rate.
5. The preparation process according to claim 1, wherein the preparation of the CMAS erosion resistant thermal barrier coating material comprises the following steps, in order from bottom to top, on the superalloy substrate: a bonding layer (1), a YSZ ceramic coating (2) and a self-damaged coating (3); the thickness of the self-damaged coating is 30-80 mu m, the porosity is 15-20%, and the self-damaged coating is made of Si 2 N 2 O particles with the particle size range of 1.2-10 μm; the total thickness of the thermal barrier coating material is 140-260 mu m.
6. The manufacturing process according to claim 5, wherein the YSZ ceramic coating thickness is 50-120 μm; wherein the YSZ ceramic is made of ZrO 2 +6-8wt%Y 2 O 3 Composition is prepared.
7. The preparation process according to claim 5, characterized in thatThe Si is 2 N 2 The O particles are lamellar.
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