CN114507071A - High-strength ceramic dielectric material and preparation method thereof - Google Patents
High-strength ceramic dielectric material and preparation method thereof Download PDFInfo
- Publication number
- CN114507071A CN114507071A CN202210235362.3A CN202210235362A CN114507071A CN 114507071 A CN114507071 A CN 114507071A CN 202210235362 A CN202210235362 A CN 202210235362A CN 114507071 A CN114507071 A CN 114507071A
- Authority
- CN
- China
- Prior art keywords
- temperature
- heating
- ceramic dielectric
- dielectric material
- glass powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3289—Noble metal oxides
- C04B2235/3291—Silver oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/36—Glass starting materials for making ceramics, e.g. silica glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Abstract
The invention relates to the field of ceramic dielectric materials, in particular to a high-strength ceramic dielectric material and a preparation method thereof. Is composed of Nd (5-25 wt.%)2O3And 75-95% of 0.5Ag2O‑45K2O‑50Bi2O3Glass powder. The invention selects 0.5Ag2O‑45K2O‑50Bi2O3The system is to prepare glass ceramic by using a powder method process and add Nd2O3The crystal nucleating agent can activate the lattice energy of the system to ensure that the system is uniformly crystallized, thereby meeting the requirements of high strength and having the advantages of low dielectric constant, low dielectric loss, high stability, no lead and environmental protection.
Description
Technical Field
The invention relates to the field of ceramic dielectric materials, in particular to a high-strength ceramic dielectric material and a preparation method thereof.
Background
The multilayer, chip, integrated and multifunctional information function ceramic components are the mainstream of development. The trend of the integration, miniaturization and intellectualization of electronic information technology promotes new changes of electronic components in the assembling and operating modes, namely the conversion from plug-in mounting to surface assembling, from simulation to digitalization, from fixed to movable and from separated to integration. Chip capacitors, chip inductors and chip resistors are three most widely used passive components and have been developed into a large-scale industry group. Other chip electronic components with different functions, such as chip drivers, chip transformers, chip antennas, chip sensors, and chip transducers, have been developed rapidly.
Capacitors are important passive electronic devices, which are indispensable in electronics, communications and information industries, and can store charges, block direct current, filter alternating current, provide tuning and oscillation, and the like. According to the material, the capacitor can be divided into a ceramic capacitor, an aluminum electrolytic capacitor, a tantalum capacitor, a plastic film capacitor and the like. The passive-active integrated functional module made by LTCC technology is a technology capable of realizing miniaturization and high-integration multifunctional design of an electronic component packaging module. On the basis of the LTCC technology, materials with better performance are selected to enable the electronic equipment to have better performance, and the realization of industrial production by combining high-performance ceramic materials with the LTCC technology is one of the schemes meeting the development requirements of high-frequency, miniaturization, high integration and the like of the electronic components at present.
Currently, for the LTCC substrate, the good mechanical property and the low sintering temperature are very important, and the good mechanical property is the basic guarantee of the quality of the LTCC substrate; the low sintering temperature can lead the material to be well matched with Ag or Au, and has no reaction, no permeation and the like, otherwise, the reaction or the permeation occurs, and the short circuit of the final product can be caused to fail. The materials reported at present have the problems of high sintering temperature, low bending strength, high dielectric constant, high dielectric loss, poor stability and the like.
Disclosure of Invention
The invention aims to provide a high-strength ceramic dielectric material and a preparation method thereof, and the material has the advantages of low dielectric constant, low dielectric loss, high stability, no lead and environmental protection, and the sintering temperature of the method is low.
The invention is realized by the following technical scheme: a high-strength ceramic dielectric material is prepared from Nd (5-25 wt.%)2O3And 75-95% of 0.5Ag2O-45K2O-50Bi2O3Glass powder.
The invention further provides a preparation method of the high-strength ceramic dielectric material, which comprises the following steps:
(1) mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Carrying out burdening and ball milling, heating to 1200 ℃, keeping the temperature for 0.5-1 hour, rapidly cooling by water, grinding and sieving to obtain glass powder A;
(2) 5 to 25 percent of Nd according to mass percentage2O3Carrying out secondary batching with 75-95% of glass powder A to obtain a batching B;
(3) ball milling the material B, adding 5-8 wt% of adhesive for granulation, pressing into green body, heating to 400 ℃ at 300-.
As a further improvement of the technical scheme of the preparation method, in the step (1), the heating rate of the temperature rising to 1200 ℃ is 9-12 ℃/min.
As a further improvement of the technical scheme of the preparation method, in the step (1), the heating rate of heating to 1200 ℃ is 10 ℃/min.
As a further improvement of the technical scheme of the preparation method, in the step (3), the heating is carried out to 400 ℃ at a heating rate of 2 ℃/min and then to 900 ℃ at a heating rate of 10 ℃/min.
As a further improvement of the technical scheme of the preparation method, the adhesive is polyvinyl alcohol or paraffin.
As a further improvement of the technical scheme of the preparation method, the ball-milled materials in the steps (1) and (3) need to pass through 250 pores/cm of 120-2And (5) separating and screening.
The high-strength ceramic dielectric material 0.5Ag2O-45K2O-50Bi2O3The dielectric ceramic has low dielectric constant, adjustable temperature coefficient of capacity and low loss, and is a dielectric ceramic material with excellent performance. The invention selects 0.5Ag2O-45K2O-50Bi2O3The system is to prepare glass ceramic by using a powder method process and add Nd2O3The crystal nucleating agent can activate the lattice energy of the system to ensure that the system is uniformly crystallized, thereby satisfying the requirements of high strength and having dielectric constantLow number, low dielectric loss, high stability, no lead and environmental protection. The ceramic dielectric material obtained by the preparation method has the bending strength of 400-435MPa, the dielectric constant of 10-15 and the dielectric loss of 0.001-0.009.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a graph showing the test results of temperature coefficients TCC of ceramic dielectric materials obtained in example 1, example 2, example 3 and example 4. As can be seen from the figure: the temperature coefficients show a slow rising trend and then decline along with the temperature rise, but the temperature coefficients are within +/-15 percent, reach the X8R standard and have higher temperature stability.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
A high-strength ceramic dielectric material is prepared from Nd (5-25 wt.%)2O3And 75-95% of 0.5Ag2O-45K2O-50Bi2O3Glass powder.
A preparation method of a high-strength ceramic dielectric material comprises the following steps:
(1) mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Carrying out burdening and ball milling, heating to 1200 ℃, keeping the temperature for 0.5-1 hour, rapidly cooling by water, grinding and sieving to obtain glass powder A;
(2) 5 to 25 percent of Nd according to mass percentage2O3Carrying out secondary batching with 75-95% of glass powder A to obtain a batching B;
(3) ball milling the material B, adding 5-8 wt% of adhesive for granulation, pressing into green body, heating to 400 ℃ at 300-.
In the present invention, the binder added in step (3) is volatilized during the subsequent temperature rise.
In the present invention, it is preferable that in the step (1), the temperature increase rate of the temperature increase to 1200 ℃ is 9 to 12 ℃/min.
In the present invention, it is preferable that in the step (1), the temperature increase rate of the temperature increase to 1200 ℃ is 10 ℃/min.
In the present invention, it is preferable that in the step (3), the temperature is raised to 400 ℃ at a temperature raising rate of 2 ℃/min, and then to 900 ℃ at a temperature raising rate of 10 ℃/min.
In the present invention, preferably, the binder is polyvinyl alcohol or paraffin wax.
In the present invention, it is preferable that the ball-milled material obtained in the steps (1) and (3) should pass through 120-250 pores/cm2And (5) separating and screening. In specific implementation, the medium for ball milling is zirconia balls with the diameter of 1 mm.
The test method and test equipment used in the present invention are as follows:
1. test of bending Strength
The samples were subjected to a three-point bending test using a CSS-55300 electronic universal tester, model laboratory institute of peruvian laboratories, with samples of 25mm by 5mm by 4mm bars of at least 3 samples per group. The loading rate was 0.4mm/min and the span was 20 mm. Bending strength sigmabThe calculation formula of (2) is as follows:
σb＝3P·L/(2b·h2)
wherein P is the maximum load when the sample breaks, L is the span, b is the sample width, and h is the sample height.
2. Measurement of dielectric constant ε and loss tan. delta
The capacitance C and the dielectric loss tan delta (test frequency 1KHz) of the capacitor were measured using a HEWLETT PACKARD 4278A capacitance tester, and the dielectric constant ε was calculated by the following equation:
wherein: c-capacitance of the sample, in pF; d-thickness of the sample piece, unit cm; d-diameter of the sintered D-sample piece in cm.
3. Test of temperature coefficient TCC (-55 ℃ to 150 ℃)
The capacitance temperature coefficient (the test frequency is 1MHz) of the capacitor is obtained by measuring the capacitance variation of the sample with temperature by using a WAYKERR bridge model 6425, a GZ-ESPEC MC-710F high-low temperature box and a special C-T/V characteristic tester of the capacitor model HM27002, and the calculation formula is as follows:
wherein: the reference temperature is 25 ℃, C0At a temperature of 25 ℃ in volume, C1Is a temperature t1The capacity of (c).
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
Example 1
Mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a 3.3kw ordinary oven, and passing through 120 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 9 ℃/min, and keeping the temperature at 1200 ℃ for 0.5 hour to obtain the glass powder A.
Carrying out secondary batching according to 95 percent of glass powder A and 5 percent of Nd2O3Mixing uniformly, adding deionized water, ball milling for 8 hours in a ball mill with the rotating speed of 400r/min, drying at 120 ℃, and passing through 125 holes/cm2And (3) separating a sample, sieving, adding 5 wt% of paraffin wax for granulation, pressing into a green body, heating to 300 ℃ according to the heating rate of 2 ℃/min, heating to 700 ℃ according to the heating rate of 10 ℃/min for sintering, preserving heat for 1 hour, and cooling to obtain the ceramic dielectric material.
The dielectric properties (test frequency of 1MHz) and strength of the ceramic dielectric materials of the above examples are shown in Table 1 and FIG. 1.
TABLE 1
Example 2
Mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a common oven of 3.3kw, and passing through 200 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 10 ℃/min, and keeping the temperature at 1200 ℃ for 0.6 hour to obtain the glass powder A.
Carrying out secondary batching according to 90 percent of glass powder A and 10 percent of Nd2O3Mixing uniformly, adding deionized water, ball milling for 8 hours in a ball mill with the rotating speed of 400r/min, drying at 120 ℃, and passing through 200 holes/cm2And (3) separating a sample, sieving, adding 6 wt% of paraffin wax for granulation, pressing into a green body, heating to 350 ℃ according to the heating rate of 2 ℃/min, heating to 750 ℃ according to the heating rate of 10 ℃/min for sintering, preserving heat for 1 hour, and cooling to obtain the ceramic dielectric material.
The dielectric properties (test frequency of 1MHz) and strength of the ceramic dielectric materials of the above examples are shown in Table 2 and FIG. 1.
TABLE 2
Example 3
Mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a 3.3kw ordinary oven, and passing through 250 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 11 ℃/min, and keeping the temperature at 1200 ℃ for 0.8 hour to obtain the glass powder A.
Secondary proportioning is carried out according to 85 percent of glass powder A and 15 percent of Nd2O3Mixing uniformly, adding deionized water, ball milling for 8 hours in a ball mill with the rotating speed of 400r/min, drying at 120 ℃, and passing through 250 holes/cm2And (3) screening samples, adding 7 wt% of paraffin wax for granulation, pressing into a green body, heating to 400 ℃ according to the heating rate of 2 ℃/min, heating to 800 ℃ according to the heating rate of 10 ℃/min, sintering, keeping the temperature for 1 hour, and cooling to obtain the ceramic dielectric material.
The dielectric properties (testing frequency is 1MHz) and strength of the ceramic dielectric material of the above embodiment are shown in Table 3 and FIG. 1.
TABLE 3
Example 4
Mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a 3.3kw ordinary oven, and passing through 250 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 12 ℃/min, and keeping the temperature at 1200 ℃ for 1 hour to obtain the glass powder A.
Carrying out secondary batching according to 75 percent of glass powder A and 25 percent of Nd2O3Mixing uniformly, adding deionized water, ball milling for 8 hours in a ball mill with the rotating speed of 400r/min, drying at 120 ℃, and passing through 250 holes/cm2Separating sample, sieving, adding 8 wt% paraffin wax, granulating, pressing into green body, and making into tablet, capsule, tablet, etc. at 2 deg.C/mHeating to 400 ℃ at the in heating rate, heating to 900 ℃ at the heating rate of 10 ℃/min, sintering, keeping the temperature for 1 hour, and cooling to obtain the ceramic dielectric material.
The dielectric properties (test frequency of 1MHz) and strength of the ceramic dielectric materials of the above examples are shown in Table 4 and FIG. 1.
TABLE 4
Example 5
Mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a 3.3kw ordinary oven, and passing through 230 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 11 ℃/min, and keeping the temperature at 1200 ℃ for 0.9 hour to obtain the glass powder A.
Carrying out secondary batching according to 75 percent of glass powder A and 25 percent of Nd2O3Mixing uniformly, adding deionized water, ball milling for 8 hours in a ball mill with the rotating speed of 400r/min, drying at 120 ℃, and passing through 250 holes/cm2And (3) screening samples, adding 8 wt% of paraffin wax for granulation, pressing into a green body, heating to 400 ℃ according to the heating rate of 2 ℃/min, heating to 870 ℃ according to the heating rate of 10 ℃/min for sintering, preserving heat for 1 hour, and cooling to obtain the ceramic dielectric material.
Example 6
Mixing the raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Mixing, ball milling for 6 hr in a ball mill at 400r/min, drying at 100 deg.C in a 3.3kw ordinary oven, and passing through 120 holes/cm2And (4) separating a sample, sieving, heating to 1200 ℃ at the speed of 10 ℃/min, and keeping the temperature at 1200 ℃ for 0.8 hour to obtain the glass powder A.
Carrying out secondary batching according to 80 percent of glass powder A and 20 percent of Nd2O3Are uniformly mixed according to the mass relation ofBall milling with ionized water in ball mill at 400r/min for 8 hr, drying at 120 deg.C, and passing through 250 holes/cm2And (3) screening samples, adding 6 wt% of paraffin wax for granulation, pressing into a green body, heating to 390 ℃ at the heating rate of 2 ℃/min, heating to 880 ℃ at the heating rate of 10 ℃/min for sintering, preserving heat for 1 hour, and cooling to obtain the ceramic dielectric material.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (7)
1. A high-strength ceramic dielectric material is characterized by comprising 5-25% of Nd by mass2O3And 75-95% of 0.5Ag2O-45K2O-50Bi2O3Glass powder.
2. The method for preparing a high-strength ceramic dielectric material according to claim 1, comprising the steps of:
(1) mixing raw material Ag2O、K2O and Bi2O3According to the general formula 0.5Ag2O-45K2O-50Bi2O3Carrying out burdening and ball milling, heating to 1200 ℃, keeping the temperature for 0.5-1 hour, rapidly cooling by water, grinding and sieving to obtain glass powder A;
(2) 5 to 25 percent of Nd according to mass percentage2O3Carrying out secondary batching with 75-95% of glass powder A to obtain a batching B;
(3) ball milling the material B, adding 5-8 wt% of adhesive for granulation, pressing into green body, heating to 400 ℃ at 300-.
3. The method according to claim 2, wherein in the step (1), the temperature raising rate for raising the temperature to 1200 ℃ is 9-12 ℃/min.
4. The method according to claim 3, wherein in the step (1), the temperature raising rate for raising the temperature to 1200 ℃ is 10 ℃/min.
5. The method as claimed in claim 2, wherein in the step (3), the ceramic dielectric material is heated to 400 ℃ at a heating rate of 2 ℃/min, and then heated to 900 ℃ at a heating rate of 10 ℃/min.
6. The method of claim 2, 3, 4 or 5, wherein the binder is polyvinyl alcohol or paraffin wax.
7. The method as claimed in claim 6, wherein the ball-milled materials obtained in steps (1) and (3) pass through 250 pores/cm and 120 pores/cm2And (5) separating and screening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210235362.3A CN114507071A (en) | 2022-03-05 | 2022-03-05 | High-strength ceramic dielectric material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210235362.3A CN114507071A (en) | 2022-03-05 | 2022-03-05 | High-strength ceramic dielectric material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114507071A true CN114507071A (en) | 2022-05-17 |
Family
ID=81554120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210235362.3A Pending CN114507071A (en) | 2022-03-05 | 2022-03-05 | High-strength ceramic dielectric material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114507071A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101094818A (en) * | 2004-05-29 | 2007-12-26 | 肖特股份公司 | Nano glass powder and use thereof, particularly multicomponent glass powder with a mean particle size of less than 1 [mu]m |
| CN101148323A (en) * | 2007-09-06 | 2008-03-26 | 北京科技大学 | Low-temperature co-fired cordierite series glass-ceramic substance power and preparation method thereof |
| JP2013135088A (en) * | 2011-12-26 | 2013-07-08 | Taiyo Yuden Co Ltd | Dielectric glass composition and laminate common mode choke coil including the same |
| CN104962236A (en) * | 2015-05-28 | 2015-10-07 | 秦桂文 | Broken abrasive particle with designed thickness, abrasive product made of broken abrasive particle, and preparation method of broken abrasive particle |
| CN109081693A (en) * | 2018-10-16 | 2018-12-25 | 太原理工大学 | A kind of high dielectric X8R ceramic medium material and preparation method thereof |
| CN109206124A (en) * | 2018-10-09 | 2019-01-15 | 太原师范学院 | A kind of low-temperature co-fired ceramic medium material and preparation method thereof |
| CN110040965A (en) * | 2019-03-29 | 2019-07-23 | 太原理工大学 | A kind of machinable ceramic material and preparation method thereof |
| CN110105067A (en) * | 2019-05-01 | 2019-08-09 | 太原师范学院 | A kind of high dielectric X7R ceramic medium material and preparation method thereof |
-
2022
- 2022-03-05 CN CN202210235362.3A patent/CN114507071A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101094818A (en) * | 2004-05-29 | 2007-12-26 | 肖特股份公司 | Nano glass powder and use thereof, particularly multicomponent glass powder with a mean particle size of less than 1 [mu]m |
| CN101148323A (en) * | 2007-09-06 | 2008-03-26 | 北京科技大学 | Low-temperature co-fired cordierite series glass-ceramic substance power and preparation method thereof |
| JP2013135088A (en) * | 2011-12-26 | 2013-07-08 | Taiyo Yuden Co Ltd | Dielectric glass composition and laminate common mode choke coil including the same |
| CN104962236A (en) * | 2015-05-28 | 2015-10-07 | 秦桂文 | Broken abrasive particle with designed thickness, abrasive product made of broken abrasive particle, and preparation method of broken abrasive particle |
| CN109206124A (en) * | 2018-10-09 | 2019-01-15 | 太原师范学院 | A kind of low-temperature co-fired ceramic medium material and preparation method thereof |
| CN109081693A (en) * | 2018-10-16 | 2018-12-25 | 太原理工大学 | A kind of high dielectric X8R ceramic medium material and preparation method thereof |
| CN110040965A (en) * | 2019-03-29 | 2019-07-23 | 太原理工大学 | A kind of machinable ceramic material and preparation method thereof |
| CN110105067A (en) * | 2019-05-01 | 2019-08-09 | 太原师范学院 | A kind of high dielectric X7R ceramic medium material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109206124B (en) | Low-temperature co-fired ceramic dielectric material and preparation method thereof | |
| CN101362647A (en) | Low temperature sintering lithium-base microwave dielectric ceramic material and preparation thereof | |
| CN105565799A (en) | Low-loss temperature-stable high-frequency dielectric ceramic | |
| CN109320232A (en) | A kind of microwave-medium ceramic material and preparation method thereof | |
| CN101747060A (en) | A kind of low-temperature sintered microwave dielectric ceramic material and preparation method thereof | |
| CN110950655B (en) | Ca-Ti-based high-dielectric microwave ceramic substrate material and preparation method and application thereof | |
| CN110156457B (en) | Low-temperature co-fired ceramic dielectric material and preparation method thereof | |
| JP2000319066A (en) | Low temperature simultaneously firing dielectric ceramic composition | |
| CN106587989B (en) | A kind of high dielectric property grain boundary layer ceramic capacitor medium | |
| CN114507071A (en) | High-strength ceramic dielectric material and preparation method thereof | |
| CN109081693B (en) | High-dielectric X8R ceramic dielectric material and preparation method thereof | |
| CN109133914B (en) | Titanium dioxide-based ceramic material with high thermal stability and preparation method thereof | |
| CN110105067B (en) | High-dielectric X7R ceramic dielectric material and preparation method thereof | |
| CN112939595B (en) | Microwave dielectric ceramic material with near-zero temperature coefficient at high temperature and preparation method thereof | |
| CN1690014A (en) | Ceramic materials for microwave ceramic capacitor and making method therefor | |
| CN110922186B (en) | Medium-low temperature sintered high-dielectric-constant ceramic dielectric material and preparation method thereof | |
| CN100537472C (en) | High-frequency high permittivity ceramic medium and preparation method thereof | |
| CN106145932B (en) | A kind of medium material for multilayer ceramic capacitors of high dielectric constant and preparation method thereof | |
| CN114550977B (en) | Low-temperature co-fired ceramic dielectric material and preparation method thereof | |
| CN110563459A (en) | Preparation method of tri/pentavalent ion co-doped titanium dioxide-based dielectric ceramic material | |
| CN114315344B (en) | Negative temperature coefficient ceramic dielectric material and preparation method thereof | |
| CN106478090B (en) | Bismuth titanates-calcium niobate solid solution frequency dielectric ceramic preparation method | |
| CN102249675B (en) | Novel microwave dielectric ceramic material for multilayer ceramic capacitor | |
| CN110577401A (en) | preparation method of titanium dioxide-based dielectric material | |
| CN102173782A (en) | Molybdenum-based and titanium-based temperature stabilized microwave dielectric ceramic material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20220517 |