CN114498285B - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
- Publication number
- CN114498285B CN114498285B CN202210083666.2A CN202210083666A CN114498285B CN 114498285 B CN114498285 B CN 114498285B CN 202210083666 A CN202210083666 A CN 202210083666A CN 114498285 B CN114498285 B CN 114498285B
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- Prior art keywords
- semiconductor laser
- heat dissipation
- dissipation structure
- heat
- heat sink
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 230000017525 heat dissipation Effects 0.000 claims abstract description 73
- 230000007704 transition Effects 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 22
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 230000002829 reductive effect Effects 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present disclosure provides a semiconductor laser including: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active area, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the dimension of the lower surface of the active region is the same as the dimension of the upper surface of the heat dissipating structure, and the active region is aligned with the upper surface of the heat dissipating structure. The cross section of the radiating structure is arranged to be trapezoid, so that the effects of promoting the radiation of the central area and inhibiting the radiation of two sides during the operation of the semiconductor laser are achieved, the uniformity of the temperature distribution inside the semiconductor laser tube core is further improved, the influence of a thermal lens effect is inhibited, the quality of light beams is improved, and the photoelectric performance, the reliability and the service life of the semiconductor laser are improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor laser technologies, and in particular, to a semiconductor laser.
Background
The semiconductor laser has the advantages of high electro-optical efficiency, small volume, long service life, high reliability and the like, and has been widely applied to the fields of material processing, communication, medical cosmetology and the like. In order to further expand the application of semiconductor lasers in various large fields, improving the beam quality of the device under the condition of high power output is an important point of attention. In a common COS packaging structure, a large amount of waste heat is generated when the semiconductor laser works normally, the temperature distribution in the transverse direction shows a higher temperature gradient with high central temperature and low temperatures at two sides, and the transverse refractive index distribution tends to be uneven, so that a thermal lens effect appears, the slow axis far field divergence angle is increased, and the beam quality is reduced. In the related art, a heat path structure with a rectangular cross section is introduced between the semiconductor laser tube core and the transitional heat sink, although the heat dissipation effect on two sides of the tube core can be restrained, so that the uniformity of the whole temperature inside the tube core is improved, the influence of a thermal lens effect is reduced, and higher light beam quality is obtained, the whole temperature inside the semiconductor laser tube core is increased along with the heat dissipation effect, and the temperature rise is more obvious under the condition of higher working current, so that the photoelectric performance, the reliability and the service life of a device are seriously influenced.
Disclosure of Invention
In view of the above, the present disclosure provides a semiconductor laser.
According to one aspect of the present disclosure, there is provided a semiconductor laser including:
a transitional heat sink;
the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink;
the semiconductor laser tube core comprises an active area, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure;
the dimension of the lower surface of the active region is the same as the dimension of the upper surface of the heat dissipating structure, and the active region is aligned with the upper surface of the heat dissipating structure.
Optionally, the cross section of the heat dissipation structure is an isosceles trapezoid, and the size of the upper bottom of the isosceles trapezoid is smaller than that of the lower bottom of the isosceles trapezoid.
Optionally, the semiconductor laser further includes:
and a transition heat sink is arranged on the upper surface of the metal heat sink.
Optionally, the first side of the metal heat sink, the second side of the transition heat sink, the third side of the heat dissipation structure, and the fourth side of the semiconductor laser die are all located in the same plane, and the planes are parallel to the cross section;
the third side surface is perpendicular to the upper surface and the lower surface of the heat dissipation structure.
Optionally, the connection between the semiconductor laser die and the heat spreading structure comprises soldering.
Optionally, the lower surface of the heat spreading structure is aligned with the lower surface of the semiconductor laser die in a direction perpendicular to the cross-section.
Optionally, the active region is proximate to an upper surface of the heat spreading structure.
Optionally, the material of the heat dissipation structure includes any one of gold or copper.
Optionally, the height of the heat dissipation structure is 30-50 um.
Optionally, the dimension of the lower surface of the semiconductor laser die is the same as the dimension of the lower surface of the active region in a direction perpendicular to the cross-section of the heat spreading structure.
The semiconductor laser provided by the present disclosure includes: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active area, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the dimension of the lower surface of the active region is the same as the dimension of the upper surface of the heat dissipating structure, and the active region is aligned with the upper surface of the heat dissipating structure. The heat radiation structure provided by the disclosure can weaken the transverse temperature distribution gradient of the semiconductor laser active area, increase the temperature uniformity inside the semiconductor laser tube core, thereby reducing the influence of thermal lens effect, reducing the slow axis far field divergence angle and ensuring higher beam quality.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 schematically illustrates a structural diagram of a semiconductor laser according to an embodiment of the present disclosure;
fig. 2 schematically illustrates three views of a semiconductor laser provided by an embodiment of the present disclosure; and
fig. 3 schematically illustrates a structural diagram of yet another semiconductor laser provided in an embodiment of the present disclosure.
Reference numerals illustrate:
1, a metal heat sink; 2, transitional heat sink; 3 a heat dissipation structure; 4 semiconductor laser die; 5 an active region; 101 a first side; 201 a second side; 301 a third side; 401 fourth side.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
In the drawings or description, like or identical parts are provided with the same reference numerals. Implementations not shown or described in the drawings are forms known to those of ordinary skill in the art. Additionally, although examples of parameters including particular values may be provided herein, it should be appreciated that the parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error margins or design constraints. In addition, directional terms such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like, which are mentioned in the following embodiments, are only directions referring to the drawings. Thus, directional terminology is used for purposes of illustration and is not intended to be limiting of the disclosure.
Fig. 1 schematically illustrates a structural diagram of a semiconductor laser provided by an embodiment of the present disclosure, and fig. 2 schematically illustrates three views of a semiconductor laser provided by an embodiment of the present disclosure.
As shown in fig. 1 and 2, in an embodiment of the present disclosure, the semiconductor laser includes: a transitional heat sink 2; the heat dissipation structure 3 is arranged on the upper surface of the transition heat sink 2, the cross section of the heat dissipation structure 3 is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink 2; a semiconductor laser die 4 including an active region 5, the semiconductor laser die 4 being disposed on an upper surface of the heat dissipation structure 3, a lower surface of the semiconductor laser die 4 having a size identical to a size of a lower surface of the heat dissipation structure 3; the dimensions of the lower surface of the active region 5 are the same as the dimensions of the upper surface of the heat sink structure 3, and the active region 5 is aligned with the upper surface of the heat sink structure 3.
With reference to fig. 1 and 2, a heat dissipation structure 3 is disposed between a semiconductor laser die 4 and a transitional heat sink 2, in this embodiment, the semiconductor laser die 4 may be connected to the heat dissipation structure 3 by a welding manner, and other connection manners may also be selected according to actual requirements, which is not limited in the connection manner between the semiconductor laser die 4 and the heat dissipation structure 3. The cross section of the heat dissipation structure 3 is trapezoidal, the upper surface of the heat dissipation structure 3 is the plane where the upper bottom of the trapezoid is located, the lower surface of the heat dissipation structure 3 is the plane where the lower bottom of the trapezoid is located, and the lower surface of the heat dissipation structure 3 is in contact with the transitional heat sink 2, the upper surface of the heat dissipation structure 3 is in contact with the semiconductor laser die 4 (as shown in fig. 2), in this embodiment, in order to ensure the heat dissipation effect, the material of the heat dissipation structure 3 can be selected from materials with higher heat conductivity, such as gold or copper, or other nonmetallic materials with higher heat conductivity, specifically, the material can be selected according to actual requirements, and the material of the heat dissipation structure 3 is not limited in this disclosure. In addition, in the present embodiment, the height of the heat dissipation structure 3 (i.e. the height of the cross section of the heat dissipation structure 3) is 30-50 um, if the height of the heat dissipation structure 3 is too low, the gradient between the two sides and the center of the semiconductor laser die 4 is larger, the suppression effect on the thermal lens effect is smaller, and if the height of the heat dissipation structure 3 is too high, the overall heat dissipation effect of the semiconductor laser die 4 will be reduced, so that the junction temperature of the semiconductor laser die 4 is increased, and the device performance is affected.
Referring to fig. 1 and 2 together, the dimensions of the lower surface of the semiconductor laser die 4 and the lower surface of the heat sink structure 3 are the same, the semiconductor laser die 4 further comprises an active region 5, the dimensions of the lower surface of the active region 5 and the dimensions of the upper surface of the heat sink structure 3 are the same and aligned, in this embodiment, the dimensions of the lower surface of the semiconductor laser die 4 and the dimensions of the lower surface of the active region 5 (as shown in fig. 2) are the same, and the dimensions of the lower surface of the semiconductor laser die 4 and the dimensions of the lower surface of the heat sink structure 3 are the same, i.e. in the direction perpendicular to the cross section of the heat sink structure 3, the heat dissipation structure 3, the semiconductor laser 4 and the active region 5 are the same in size, that is, only a portion of the lower surface of the semiconductor laser die 4 corresponding to the active region 5 is in contact with the upper surface of the heat dissipation structure 3 (as shown in fig. 1), so that the heat dissipation effect of the central region of the semiconductor laser during operation can be promoted, while both sides of the heat dissipation can be suppressed, thereby increasing the uniformity of the internal temperature distribution of the semiconductor laser die 4, and the active region 5 can be brought close to the upper surface of the heat dissipation structure 3, the heat dissipation effect of the central region of the semiconductor laser during operation can be further promoted, and in the present embodiment, the lower surface of the heat dissipation structure 3 and the lower surface of the semiconductor laser die 4 can be aligned (as shown in fig. 2) in a direction perpendicular to the cross section of the heat dissipation structure 3, that is, the non-contact portions of the semiconductor laser die 4 on both sides of the heat dissipation structure 3 are ensured to be the same in size, and heat dissipation on both sides of the semiconductor laser is further suppressed. Meanwhile, since the internal temperature distribution of the semiconductor laser die 4 and the refractive index distribution are positively correlated, when the refractive index distribution in the semiconductor laser die 4 tends to be uniform, the thermal lens effect can be reduced, the beam quality can be increased, and the purposes of inhibiting the influence of the thermal lens effect and improving the beam quality can be achieved. In addition, because the upper surface of the heat dissipation structure 3 is in partial contact with the lower surface of the semiconductor laser die 4, the area of the low heat conduction area is reduced, so that the influence of the heat dissipation structure 3 on the overall heat dissipation of the semiconductor laser die 4 is reduced, the heat dissipation performance of the semiconductor laser die 4 is guaranteed, the overall temperature of the semiconductor laser die 4 is reduced, the photoelectric performance of the semiconductor laser is improved, and the reliability and the service life of the semiconductor laser are improved.
In an embodiment of the present disclosure, the cross section of the heat dissipation structure 3 is an isosceles trapezoid, and the size of the upper base of the isosceles trapezoid is smaller than the size of the lower base of the isosceles trapezoid.
In this embodiment, the heat dissipation structure 3 is configured as an isosceles trapezoid, so that the heat dissipation effects at two sides of the semiconductor laser die 4 tend to be consistent, the uniformity inside the semiconductor laser die 4 is increased, the influence of thermal lens effect is further reduced, and the beam quality is improved. In addition, since the waste heat generating area is mainly concentrated on the portion of the active area 5 corresponding to the current injection area when the semiconductor laser works, the phenomenon that the center temperature of the semiconductor laser is high and the temperatures of two sides are low is often shown in a common packaging mode, wherein the center temperature is mainly concentrated on the portion of the active area 5 corresponding to the current injection area, therefore, the heat radiating structure 3 is set to be of a structure with an isosceles trapezoid cross section, the size of the upper surface of the heat radiating structure 3 is the same as the size of the lower surface of the active area 5 related to the current injection area, heat radiation of the center of the semiconductor laser is increased, the heat radiating effect of two sides is reduced, the heat flow is restrained from flowing from the center to two sides, and further the thermal lens effect is restrained, meanwhile, the size of the lower surface of the heat radiating structure 3 with the isosceles trapezoid cross section is the same as the size of the lower surface of the semiconductor laser die 4, the range of an air gap is reduced, and the whole heat radiating effect of the semiconductor laser die 4 is increased.
In an embodiment of the present disclosure, the semiconductor laser further includes: the metal heat sink 1, the upper surface of the metal heat sink 1 is provided with a transition heat sink 2. The first side 101 of the metal heat sink 1, the second side 201 of the transition heat sink 2, the third side 301 of the heat spreading structure 3 and the fourth side 401 of the semiconductor laser die 4 are all located in the same plane, which is parallel to the cross section of the heat spreading structure 3; the third side 301 is perpendicular to the upper and lower surfaces of the heat dissipation structure 3.
Referring to fig. 1 to 3, the transition heat sink 2 is disposed on the metal heat sink 1, and since the semiconductor laser emits light at the edge, in this embodiment, the metal heat sink 1, the transition heat sink 2, the heat dissipation structure 3, and one end of the semiconductor laser die 4 are aligned (as shown in fig. 2), so that the light emitting effect of the semiconductor laser can be ensured.
The present disclosure provides a semiconductor laser including: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active area, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the dimension of the lower surface of the active region is the same as the dimension of the upper surface of the heat dissipating structure, and the active region is aligned with the upper surface of the heat dissipating structure. The cross section of the radiating structure is arranged to be trapezoid, so that the effects of promoting the radiation of the central area and inhibiting the radiation of two sides during the operation of the semiconductor laser are achieved, the uniformity of the temperature distribution inside the semiconductor laser tube core is further improved, the influence of a thermal lens effect is inhibited, the quality of light beams is improved, and the photoelectric performance, the reliability and the service life of the semiconductor laser are improved.
Those skilled in the art will appreciate that the features recited in the various embodiments of the disclosure and/or in the claims may be provided in a variety of combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, the features recited in the various embodiments of the present disclosure and/or the claims may be variously combined and/or combined without departing from the spirit and teachings of the present disclosure. All such combinations and/or combinations fall within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. While the present disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. The scope of the disclosure should, therefore, not be limited to the above-described embodiments, but should be determined not only by the following claims, but also by the equivalents of the following claims.
Claims (8)
1. A semiconductor laser, comprising:
a metal heat sink (1);
a transition heat sink (2) arranged on the upper surface of the metal heat sink (1);
the heat dissipation structure (3) is arranged on the upper surface of the transition heat sink (2), the cross section of the heat dissipation structure (3) is trapezoid, and the lower bottom of the trapezoid is contacted with the upper surface of the transition heat sink (2);
a semiconductor laser die (4) comprising an active region (5), the semiconductor laser die (4) being disposed on an upper surface of the heat dissipation structure (3), a lower surface of the semiconductor laser die (4) having a size that is the same as a size of a lower surface of the heat dissipation structure (3);
the dimension of the lower surface of the active region (5) is the same as the dimension of the upper surface of the heat dissipation structure (3), and the active region (5) is aligned with the upper surface of the heat dissipation structure (3);
the first side (101) of the metal heat sink (1), the second side (201) of the transition heat sink (2), the third side (301) of the heat dissipation structure (3) and the fourth side (401) of the semiconductor laser die (4) are all located in the same plane, and the plane is parallel to the cross section; the third side (301) is perpendicular to the upper and lower surfaces of the heat dissipation structure (3);
the semiconductor laser emits light for the edge.
2. A semiconductor laser according to claim 1, characterized in that the cross section of the heat dissipation structure (3) is an isosceles trapezoid, the upper base of which has a smaller size than the lower base of which.
3. A semiconductor laser according to claim 1, characterized in that the connection of the semiconductor laser die (4) and the heat sink structure (3) comprises soldering.
4. A semiconductor laser according to claim 1, characterized in that the lower surface of the heat spreading structure (3) is aligned with the lower surface of the semiconductor laser die (4) in a direction perpendicular to the cross-section.
5. A semiconductor laser according to claim 1, characterized in that the active region (5) is close to the upper surface of the heat spreading structure (3).
6. A semiconductor laser according to claim 1, characterized in that the material of the heat spreading structure (3) comprises any one of gold or copper.
7. The semiconductor laser according to claim 1, characterized in that the height of the heat dissipation structure (3) is 30-50 um.
8. A semiconductor laser according to claim 1, characterized in that the dimension of the lower surface of the semiconductor laser die (4) is the same as the dimension of the lower surface of the active region (5) in a direction perpendicular to the cross-section of the heat spreading structure (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083666.2A CN114498285B (en) | 2022-01-24 | 2022-01-24 | Semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083666.2A CN114498285B (en) | 2022-01-24 | 2022-01-24 | Semiconductor laser |
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| Publication Number | Publication Date |
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| CN114498285A CN114498285A (en) | 2022-05-13 |
| CN114498285B true CN114498285B (en) | 2024-02-06 |
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| CN117954957A (en) * | 2024-03-25 | 2024-04-30 | 度亘核芯光电技术(苏州)有限公司 | Heat abstractor and semiconductor laser |
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|---|---|---|---|---|
| US7170917B2 (en) * | 2001-02-15 | 2007-01-30 | Vercilas Gmbh | Surface-emitting semiconductor laser |
| CN108520914A (en) * | 2012-09-25 | 2018-09-11 | Lg伊诺特有限公司 | Light emitting device package |
| CN111969407A (en) * | 2020-08-31 | 2020-11-20 | 宁波飞芯电子科技有限公司 | Semiconductor laser transmitter |
| CN215579535U (en) * | 2021-09-08 | 2022-01-18 | 勒威半导体技术(嘉兴)有限公司 | Semiconductor laser chip with inverted mesa structure ridge waveguide |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2399942A (en) * | 2003-03-24 | 2004-09-29 | Univ Strathclyde | Vertical cavity semiconductor optical devices |
| DE10339980B4 (en) * | 2003-08-29 | 2011-01-05 | Osram Opto Semiconductors Gmbh | Semiconductor laser with reduced heat loss |
| US10170455B2 (en) * | 2015-09-04 | 2019-01-01 | PlayNitride Inc. | Light emitting device with buffer pads |
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|---|---|---|---|---|
| US7170917B2 (en) * | 2001-02-15 | 2007-01-30 | Vercilas Gmbh | Surface-emitting semiconductor laser |
| CN108520914A (en) * | 2012-09-25 | 2018-09-11 | Lg伊诺特有限公司 | Light emitting device package |
| CN111969407A (en) * | 2020-08-31 | 2020-11-20 | 宁波飞芯电子科技有限公司 | Semiconductor laser transmitter |
| CN215579535U (en) * | 2021-09-08 | 2022-01-18 | 勒威半导体技术(嘉兴)有限公司 | Semiconductor laser chip with inverted mesa structure ridge waveguide |
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