CN114496808A - Assembly method of flip-chip plastic package, shielding system, heat dissipation system and application - Google Patents
Assembly method of flip-chip plastic package, shielding system, heat dissipation system and application Download PDFInfo
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- CN114496808A CN114496808A CN202210086531.1A CN202210086531A CN114496808A CN 114496808 A CN114496808 A CN 114496808A CN 202210086531 A CN202210086531 A CN 202210086531A CN 114496808 A CN114496808 A CN 114496808A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004020 conductor Substances 0.000 claims abstract description 50
- 238000004806 packaging method and process Methods 0.000 claims abstract description 26
- 238000007747 plating Methods 0.000 claims description 17
- 238000009713 electroplating Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
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- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 claims description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 238000004382 potting Methods 0.000 claims 1
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- 239000005022 packaging material Substances 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention provides an assembly method of flip-chip plastic package, a shielding system, a heat dissipation system and application of a plastic package device, belonging to the technical field of device packaging and comprising the plastic package device and a system circuit board; the plastic package device comprises a dielectric substrate, a preset component, a conductor, a plastic package layer and a back grounding pad, wherein the preset component, the conductor and the plastic package layer are arranged on the front surface of the dielectric substrate, the back grounding pad is arranged on the back surface of the dielectric substrate, a device pin pad is arranged at the end part of the conductor, a front grounding pad is arranged on the surface of the plastic package layer, the front surface of the plastic package device is welded on a system circuit board, and the back grounding pad is connected with a system heat dissipation structure. The assembly method of the flip-chip plastic package can realize that the device is assembled into a system circuit in a flip-chip mode, change the path of heat conduction and improve the heat dissipation effect of the device; the shielding effect of the device is improved, and the influence of the external electromagnetic environment on the interior of the device is reduced.
Description
Technical Field
The invention belongs to the technical field of device packaging, and particularly relates to a flip-chip plastic package assembly method, a shielding system based on flip-chip plastic package, a heat dissipation system and application of a plastic package device.
Background
Flip Chip, also known as Flip Chip, deposits solder balls on the I/O pads, and then Flip Chip heats the Chip to bond the melted solder balls to the substrate. The traditional flip chip mode is that the working face of the chip is connected with the substrate in a downward flip-chip mode, then circuit wiring is carried out on the substrate, a passive device is pasted and mounted, and finally the chip is encapsulated, wherein the flip-chip encapsulation mode is the earliest prototype of the flip-chip bonding interconnection technology. Flip-Chip packaging is also based on Flip-Chip (Flip Chip) implementations.
In a traditional plastic package device, a plastic package material covers a chip inside the package of the traditional plastic package device, and the plastic package material has no shielding effect on the conduction of electromagnetic signals, so that the performance of the plastic package device is easily influenced by the external electromagnetic environment.
At present, the Flip Chip is limited in that the Chip must be a Flip Chip technology, and the Flip of a device cannot be realized based on a forward Chip. Meanwhile, in the existing flip-chip technology, after packaging, the back of the chip is covered with a packaging material such as a plastic packaging material, so that the thermal conductivity of the chip is poor, and the heat dissipation requirement of a device with high heat dissipation in the plastic packaging device such as a power amplifier cannot be met. Meanwhile, an underfill material is required to be added between the internal chip and the device heat dissipation structure, and the thermal conductivity of the underfill material is relatively low and is generally less than 10W/(m.K). The heat conducting path of the tube core is a system heat dissipation structure comprising chip heat, bottom filling material, a medium substrate, a PCB through hole and a PCB through hole, wherein the PCB through hole in the conducting path is a main limiting bottleneck for rapid heat transmission; the presence of low thermal conductivity materials or structures (PCB vias) in the heat conduction path results in poor heat dissipation from the chip.
Disclosure of Invention
The embodiment of the invention provides a flip-chip plastic package assembly method, a flip-chip plastic package-based shielding system, a heat dissipation system and application of a plastic package device, which can realize that the device is assembled into a system circuit in a flip-chip manner, change the heat conduction path, improve the heat dissipation effect of the device, improve the shielding effect of the device and reduce the influence of the external electromagnetic environment on the interior of the device.
In order to achieve the above object, in a first aspect, the present invention adopts the following technical solutions: the assembly method of the flip-chip plastic package comprises the following steps:
assembling a preset component on the central pad area on the front surface of the dielectric substrate;
arranging conductors with preset heights on base pin pads on the periphery of the front surface of the dielectric substrate, wherein the heights of the conductors are higher than those of the preset components;
the preset component is plastically packaged on the front surface, and the conductor is exposed out of the surface of the plastic packaging layer;
electroplating the surface after the front surface plastic package, electroplating a device pin pad corresponding to the end surface of the conductor, and electroplating a front surface grounding pad in the central area to form a plastic package device; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a radiating surface, and the back surface of the medium substrate is provided with a back grounding bonding pad for radiating;
and assembling the plastic packaging device on a system circuit board in a back-off manner so that the front side of the plastic packaging device is directly and electrically connected with the front side of the system circuit board, and a back grounding bonding pad on the back side of the plastic packaging device is connected with a system heat dissipation structure.
With reference to the first aspect, in a possible implementation manner, the dielectric substrate is made of any one of a PCB, a ceramic substrate, and a carrier; the laminated layer of the medium substrate is one or more layers.
With reference to the first aspect, in one possible implementation manner, the connection manner of the conductors includes SMT surface mounting or conductive adhesive; the conductors may also be formed for plating out metal posts or bonding wires of a predetermined height on the base pin pads.
With reference to the first aspect, in a possible implementation manner, the plastic package manner includes a mold glue filling manner or a spraying manner by a spraying device, and the plastic package material may be epoxy resin with or without a filler substance.
With reference to the first aspect, in a possible implementation manner, the conductor may be exposed in a direct plastic package manner, or the conductor may be exposed in a thinning manner after the plastic package height is higher than the conductor height.
With reference to the first aspect, in a possible implementation manner, the thinning manner may be any one of mechanical thinning, laser thinning, or chemical thinning.
With reference to the first aspect, in a possible implementation manner, the surface after front surface plastic encapsulation is plated, and a plating type may be any one of copper nickel gold, copper nickel silver, nickel palladium gold, or copper; the plating method may be chemical plating or electrolytic plating.
In a second aspect, an embodiment of the present invention further provides a flip-chip plastic package shielding system, and an assembly method based on the flip-chip plastic package assembly method includes a front-side grounding pad of the plastic package device, a back-side grounding pad of the plastic package device, and a conductor plastically packaged in the plastic package device, where the front-side grounding pad, the back-side grounding pad, and the conductor surrounded on the periphery form a shielding cavity of a preset component inside the plastic package device.
In a third aspect, an embodiment of the present invention further provides a heat dissipation system for flip-chip plastic package, and an assembly method based on the flip-chip plastic package includes a dielectric substrate having a back-side ground pad and a system heat dissipation structure, where heat of the preset component is directly conducted to the system heat dissipation structure through the back-side ground pad on the back side of the dielectric substrate.
The embodiment of the invention provides a flip-chip plastic package assembly method, which has the following beneficial effects compared with the prior art: the invention can realize that the plastic package device is reversely assembled in a system circuit, the radio frequency transmission surface of the plastic package device is separated from the radiating surface, namely the front surface (plastic package plating surface) of the plastic package device is welded on the system circuit board to realize electric connection, and the pin bonding pads at the periphery of the front surface of the device except for providing the electric connection and radio frequency connection functions are connected to the grounding area of the system circuit board; the ground conductors on the back and the periphery of the dielectric substrate and the electroplated grounding bonding pad on the top of the device form a device shielding cavity together, so that the influence of an external electromagnetic environment on the interior of the device can be obviously reduced, and the signal transmission effect of the device is improved; the back surface of the device (the back surface of the medium substrate) can be connected with a system heat dissipation structure to conduct heat generated by the device, and the realized heat conduction path is as follows: the heat generated by the components, the medium substrate and the system heat dissipation structure are preset, so that the heat dissipation effect of the components is enhanced, the signal transmission performance of the components is improved, and the service life of the components is prolonged.
Meanwhile, the flip chip mode has low requirements on the packaging form of the device, can be realized based on a universal medium substrate, has low requirements on the chip process, and does not need a flip chip (flip chip) process.
In a fourth aspect, the embodiment of the invention further provides an application of a plastic package device, the plastic package device is prepared by the flip-chip plastic package assembly method, and the plastic package device is inversely installed on a system circuit board; and the back grounding bonding pad of the plastic package device is connected with the system heat dissipation structure.
The application of the plastic packaging device provided by the invention is that the plastic packaging device is assembled to a system circuit in a back-off manner. The back surface of the device (namely the back surface of the medium substrate) is directly connected to the system heat dissipation structure, so that the heat dissipation performance of the system is improved; the front grounding pad of the front surface of the device (namely the front electroplating surface of the plastic package body) is connected to the grounding area of the system circuit board; the pins on the periphery of the front surface of the device except for providing the electric connection and radio frequency connection functions are connected to a system circuit board grounding area, and the grounding conductors on the back and the periphery of the dielectric substrate and the electroplated grounding bonding pad on the top of the device form a device shielding cavity together, so that the influence of an external electromagnetic environment on the inside of the device can be obviously reduced, and the signal transmission effect of the device is improved.
Drawings
Fig. 1 is a schematic front structure diagram of a dielectric substrate according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a back side structure of a dielectric substrate according to an embodiment of the present invention;
fig. 3 is a schematic side view of a dielectric substrate with conductors disposed on base lead pads on the front surface thereof according to an embodiment of the invention;
fig. 4 is a schematic cross-sectional structure diagram of the dielectric substrate after being molded according to the embodiment of the invention;
fig. 5 is a schematic cross-sectional structure diagram of the dielectric substrate after plastic packaging and thinning according to the embodiment of the invention;
FIG. 6 is a schematic structural diagram of a local electroplated layer disposed on a front surface of a plastic package layer after the front surface plastic package according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram (an arrow indicates a heat dissipation direction) of a plastic package device in a system according to an embodiment of the present invention;
description of reference numerals:
1. a central pad region; 2. a base pin pad; 3. a dielectric substrate; 4. a back side ground pad; 5. a conductor; 6. a front side ground pad; 7. a plastic packaging layer; 8. a device pin pad; 9. a system heat dissipation structure; 10. a system circuit board.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 7, the flip-chip assembly method of the present invention will now be described. The assembly method of the flip-chip plastic package comprises the following steps:
step one, as shown in fig. 1, a preset component is assembled on the central pad area 1 on the front surface of the dielectric substrate 3.
Wherein, predetermine the components and parts and include active component and/or passive component, active component (active component) includes: chips (ICs), memory chips (memories), discrete components, etc.
The passive element (passive element) includes: capacitors, resistors, relays, oscillators, sensors, rectifier bridges, optocouplers, connectors, wafers, fuses, inductors, switches, diodes, triodes, and the like. The preset components form a matching circuit with certain functions. The predetermined components are connected to the base lead pads 2 by conventional wire bonding or microstrip interconnection.
Step two, as shown in fig. 3, conductors 5 with preset heights are arranged on the base pin pads 2 around the front surface of the dielectric substrate 3, and the heights of the conductors 5 are higher than the heights of the preset components, so that plastic packaging of the preset components is realized. Wherein the conductor 5 is perpendicular to the dielectric substrate 3.
And step three, as shown in fig. 4 and 5, plastically packaging the preset component on the front surface, and exposing the conductor 5 on the surface of the plastic packaging layer 7 so as to lead out the signal. The conductors 5 may be exposed in a variety of ways, as will be described later.
Step four, as shown in fig. 6, electroplating is carried out on the surface subjected to front surface plastic packaging, a device pin pad 8 is electroplated corresponding to the end face of the conductor 5, and a front surface grounding pad 6 is electroplated in the central area, so that a plastic packaged device is formed; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a radiating surface, and the back surface of the dielectric substrate 3 is provided with a back grounding bonding pad 4 for radiating. The plastic package and the electroplating of the preset components on the front surface lead out signals from the front surface, and the heat dissipation surface on the back surface of the plastic package device enables the radio frequency transmission surface and the heat dissipation surface of the plastic package device to be separated in parallel, so that mutual interference is avoided, and the heat dissipation effect and the shielding effect are improved.
Step five, as shown in fig. 7, the plastic package device is reversely assembled on the system circuit board, so that the front surface of the plastic package device is directly and electrically connected with the front surface of the system circuit board, and the back grounding pad 4 on the back surface of the plastic package device is connected with the system heat dissipation structure.
In this embodiment, the front-side ground pad 6 and a part of the ground pins in the device pin pad 8 are connected to the ground pad of the system circuit, so as to provide a good grounding effect. The front surface of the plastic package device is inversely welded on the system PCB to realize electric connection; the back of the plastic package device is connected to a system heat dissipation structure, and finally, the separation of a device heat dissipation path from a radio frequency transmission path and a grounding path is achieved, so that radio frequency signals are led out from the front of the system, and the back of the plastic package device is a heat dissipation surface, so that mutual interference is avoided, and the heat dissipation effect and the shielding effect are improved.
Compared with the prior art, the assembly method of the flip-chip plastic package provided by the embodiment of the invention can realize that the plastic package device is assembled into a system circuit in a back-off manner, the radio frequency transmission surface and the radiating surface of the plastic package device are separated, namely, the front surface (plastic package plating surface) of the plastic package device is welded on the system circuit board to realize electric connection, and the pin pads around the front surface of the device except for providing electric connection and radio frequency connection functions are connected to the grounding area of the system circuit board; the ground conductor 5 on the back and the periphery of the dielectric substrate 3 and the electroplated ground bonding pad on the top of the device jointly form a device shielding cavity, so that the influence of an external electromagnetic environment on the inside of the device can be obviously reduced, and the signal transmission effect of the device is improved; the back surface of the device (the back surface of the dielectric substrate 3) can be connected with a system heat dissipation structure, heat generated by the device is conducted, and the realized heat conduction path is as follows: the heat generated by the components, the dielectric substrate 3 and the system heat dissipation structure are preset, high heat conduction materials such as copper (with the heat conductivity of 390W/(m.K)) can be used in heat conduction paths of the system heat dissipation structure, the heat dissipation effect of the device is enhanced, and the system heat dissipation structure has obvious advantages particularly in packaging power devices, so that the signal transmission performance of the device can be improved, and the service life of the device can be prolonged.
Meanwhile, the flip chip mode has low requirements on the packaging form of the device, can be realized based on the universal dielectric substrate 3, has low requirements on the chip process, and does not need a flip chip (flip chip) process.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the dielectric substrate 3 is made of any one of a PCB, a ceramic substrate, and a carrier; the plate layer of the dielectric substrate 3 is one or more layers. Wherein, the carrier plate is a glass plate, a metal plate or a plastic plate.
For convenience of understanding, it is common that a substrate is a basic material for manufacturing a PCB, and generally, the substrate is a Copper Clad Laminate, and a single-sided or double-sided printed circuit board is manufactured by selectively performing processes such as via processing, electroless Copper plating, electrolytic Copper plating, and etching on a substrate material, i.e., a Copper Clad Laminate (CCL), to obtain a desired circuit pattern. Another type of multilayer printed board is also manufactured by using a core thin copper clad laminate as a base, and alternately laminating and bonding a conductive pattern layer and a prepreg (pregpregpregpregpregpreg) together at one time to form interconnection between more than 3 conductive pattern layers. It has the functions of conducting electricity, insulating and supporting. The performance, quality, workability in manufacturing, manufacturing cost, manufacturing level, and the like of the printed board greatly depend on the substrate material.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the connection manner of the conductor 5 includes SMT surface mounting or conductive adhesive; the conductors 5 may also be formed for plating out metal posts or bonding wires of a predetermined height on the base pin pads 2. Wherein the conductor 5 forms an electrical connection with the base pin pad 2.
For easy understanding, the SMT patch refers to a short name of a series of process flows processed on the basis of a PCB (printed Circuit board). SMT is Surface mount Technology (Surface Mounted Technology), an acronym for Surface Mounted Technology, which is one of the most popular techniques and processes in the electronic assembly industry.
SMT is Surface mount Technology (Surface Mounted Technology), an acronym for Surface Mounted Technology, which is one of the most popular techniques and processes in the electronic assembly industry. Surface Mount Technology (SMT) is known as Surface Mount or Surface Mount Technology. The surface-mounted component (SMC/SMD, chip component in Chinese) with no pins or short leads is mounted on the surface of a Printed Circuit Board (PCB) or other substrates, and is soldered and assembled by means of reflow soldering, dip soldering and the like.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the plastic package manner includes a mold glue filling manner or a spraying manner by spraying equipment, and the material of the plastic package may be epoxy resin with or without filler.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the conductor 5 may be directly plastic-packaged until the conductor 5 is exposed, or the height of the plastic package layer is higher than the height of the conductor 5, and then the conductor 5 is exposed by thinning.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the thinning manner may be any one of mechanical thinning, laser thinning, or chemical thinning.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the surface after the front surface plastic package is plated, and the plating type may be any one of copper nickel gold, copper nickel silver, nickel palladium gold, or copper; the plating method may be chemical plating or electrolytic plating.
For easy understanding, electroplating is a process of plating a thin layer of other metal or alloy on the surface of some metal by using the principle of electrolysis, and is a process of attaching a metal film on the surface of a metal or other material product by using the action of electrolysis, so as to prevent metal oxidation (such as corrosion), improve wear resistance, conductivity, light reflection, corrosion resistance (such as copper sulfate) and improve the appearance.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Based on the same inventive concept, as shown in fig. 7, an embodiment of the present invention further provides a shielding system for flip-chip plastic package, and an assembly method based on flip-chip plastic package includes a front ground pad 6 of a plastic package device, a back ground pad 4 of the plastic package device, and a conductor 5 plastic packaged in the plastic package device, where the front ground pad 6, the back ground pad 4, and the conductor 5 surrounding the periphery form a shielding cavity for a preset component inside the plastic package device, so that the influence of an external electromagnetic environment on the inside of the device can be significantly reduced.
Based on the same inventive concept, as shown in fig. 7, an embodiment of the present invention further provides a heat dissipation system for flip-chip plastic package, and an assembly method based on the flip-chip plastic package includes a dielectric substrate 3 having a back ground pad 4 and a system heat dissipation structure, and heat of a preset component is directly conducted to the system heat dissipation structure through the back ground pad 4 on the back of the dielectric substrate 3. The assembly of the present invention can achieve the following heat conduction paths: the back of the device can be directly connected with the system heat dissipation structure, and the heat dissipation paths of the chip are all high-heat-conduction materials, so that the heat conduction effect is better compared with the traditional plastic package device, and the advantage is obvious particularly in the process of packaging a power device.
Based on the same inventive concept, the embodiment of the invention also provides the application of the plastic packaging device, the plastic packaging device is prepared based on the flip-chip type plastic packaging assembly method, and as shown in fig. 7, the plastic packaging device is inversely installed on the system circuit board; the plastic package device comprises a dielectric substrate 3, a preset component arranged on the front surface of the dielectric substrate 3, a conductor 5, a plastic package layer 7 and a back grounding pad 4 arranged on the back surface of the dielectric substrate 3, wherein a device pin pad 8 is arranged at the end part of the conductor 5, a front grounding pad 6 is arranged on the surface of the plastic package layer 7, the front surface of the plastic package device is welded on a system circuit board, and the back grounding pad 4 is connected with a system heat dissipation structure. The back ground pad 4 is disposed in the central region of the back of the dielectric substrate 3, and is opposite to the central pad region 1 in the central region of the front.
The system heat dissipation structure is exemplified as follows: example 1, a heat sink directly soldered to the back ground pad 4; example 2, attaching a heat sink with fins, water cooling, oil cooling, or air cooling, etc.; other disclosed heat dissipation structures for plastic package devices.
The plastic package device includes but is not limited to various active or passive devices such as power amplifiers, filters and the like.
According to the plastic package device, the plastic package device is reversely buckled and assembled to a system circuit. The back surface of the device (namely the back surface of the medium substrate 3) is directly connected to the system heat dissipation structure, so that the heat dissipation performance of the system is improved; the front side grounding pad 6 of the device (namely the front side electroplating surface of the plastic package body) is connected to a system circuit board grounding area; the pins on the periphery of the front surface of the device except for providing the electric connection and radio frequency connection functions are connected to a system circuit board grounding area, and the ground on the back of the dielectric substrate 3, the grounding conductors 5 on the periphery and the electroplating grounding pad on the top of the device form a device shielding cavity together, so that the influence of an external electromagnetic environment on the inside of the device can be obviously reduced, and the signal transmission effect of the device is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An assembly method of a flip-chip plastic package, the assembly method comprising:
assembling a preset component on a central pad area (1) on the front surface of a dielectric substrate (3);
conductors (5) with preset height are arranged on base pin bonding pads (2) on the periphery of the front surface of a dielectric substrate (3), and the height of the conductors (5) is higher than that of the preset components;
the preset component is plastically packaged on the front surface, and the conductor (5) is exposed out of the surface of the plastic packaging layer (7);
electroplating the surface after the front surface plastic package, electroplating a device pin pad (8) corresponding to the end surface of the conductor (5), and electroplating a front surface grounding pad (6) in the central area to form a plastic package device; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a radiating surface, and the back surface of the medium substrate (3) is provided with a back grounding bonding pad (4) for radiating;
and assembling the plastic package device on a system circuit board (10) in a back-off manner so as to enable the front surface of the plastic package device to be directly and electrically connected with the front surface of the system circuit board, and connecting a back grounding bonding pad (4) on the back surface of the plastic package device with a system heat dissipation structure (9).
2. The assembly method of the flip-chip plastic package according to claim 1, wherein the dielectric substrate (3) is made of any one of a PCB, a ceramic substrate and a carrier board; the plate layer of the dielectric substrate (3) is one or more layers.
3. The assembly method of the flip-chip plastic package according to claim 1, wherein the connection mode of the conductor (5) comprises SMT surface mounting or conductive adhesive; the conductors (5) may also be formed by plating out metal posts or bonding wires of a predetermined height on the base pin pads (2).
4. An assembly method of a flip-chip plastic package according to claim 1, wherein the plastic package comprises a mold potting method or a spraying method by a spraying device, and the material of the plastic package can be epoxy resin with or without filler.
5. The assembly method of the flip-chip type plastic package according to claim 1, wherein the conductor (5) is exposed in a manner of direct plastic package until the conductor (5) is exposed, or the conductor (5) is exposed by thinning after the plastic package height is higher than the conductor (5).
6. The assembly method of the flip-chip plastic package according to claim 5, wherein the thinning manner can be any one of mechanical thinning, laser thinning or chemical thinning.
7. The assembly method of the flip-chip plastic package according to claim 1, wherein the surface after the front surface plastic package is plated, and the plating type can be any one of copper-nickel-gold, copper-nickel-silver, nickel-palladium-gold, gold or copper; the plating method may be chemical plating or electrolytic plating.
8. A shielding system of a flip-chip plastic package, characterized in that, based on the assembly method of the flip-chip plastic package according to any one of claims 1 to 7, the assembly method comprises a front grounding pad (6) of the plastic package device, a back grounding pad (4) of the plastic package device, and a conductor (5) plastically packaged in the plastic package device, wherein the front grounding pad (6), the back grounding pad (4), and the conductor (5) surrounding the front grounding pad, the back grounding pad, and the conductor (5) form a shielding cavity of a preset component inside the plastic package device.
9. A heat dissipation system for a flip-chip plastic package, based on the assembly method of the flip-chip plastic package according to any one of claims 1 to 7, comprising a dielectric substrate (3) having a back grounding pad (4) and a system heat dissipation structure, wherein the heat of the predetermined component is directly conducted to the system heat dissipation structure (9) through the back grounding pad (4) on the back of the dielectric substrate (3).
10. Use of a plastic encapsulated device, characterized in that the plastic encapsulated device is manufactured on the basis of the flip-chip plastic encapsulated assembly method according to any of claims 1-7, said plastic encapsulated device being flip-chip mounted on a system circuit board (10); and the back grounding bonding pad (4) of the plastic package device is connected with a system heat dissipation structure (9).
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