CN114487547B - Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure - Google Patents
Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure Download PDFInfo
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- CN114487547B CN114487547B CN202210043323.3A CN202210043323A CN114487547B CN 114487547 B CN114487547 B CN 114487547B CN 202210043323 A CN202210043323 A CN 202210043323A CN 114487547 B CN114487547 B CN 114487547B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Abstract
The invention provides a piezoelectric piezoresistive electric field sensor with a silicon substrate reversely-bonded glass structure, which comprises a glass layer arranged on the upper surface of a substrate; a silicon substrate disposed on the upper surface of the glass layer; and a semiconductor thin film disposed on an upper surface of the silicon substrate; a first through hole with a round table shape and a small upper part and a big lower part is formed in the central area of the silicon substrate; the central area of the glass layer is provided with an hourglass-shaped second through hole; the top of the second through hole is communicated with the bottom of the first through hole, and a piezoelectric crystal is arranged in a cavity formed after the communication; the first end of the piezoelectric crystal is adhered to the upper surface of the substrate; the second end of the piezoelectric crystal is coupled with the lower surface of the semiconductor film through the first silicon oxide layer; gaps exist between the outer wall of the piezoelectric crystal and the inner wall of the first through hole and between the outer wall of the piezoelectric crystal and the inner wall of the second through hole; the silicon substrate is reversely arranged between the semiconductor film and the glass layer, so that the measurement accuracy and the sensitivity of the electric field sensor are improved.
Description
Technical Field
The invention relates to the technical field of electronic elements, in particular to a piezoelectric piezoresistive electric field sensor with a silicon substrate reversely-bonded glass structure.
Background
Currently, micro-electric field sensors based on MEMS technology have been partially applied to electric field monitoring of atmospheric environment. Its advantages are small size, light weight, low cost, low power consumption and high integration level. But the measurement range is limited, the method can only be applied to normal electric field measurement under the low voltage level of the power grid, the output response signal is small, the measurement resolution is low, the measurement has uncertainty, and the accurate measurement cannot be realized. Therefore, it is necessary to provide a scheme to improve the measurement accuracy and sensitivity of the electric field sensor.
Disclosure of Invention
The invention aims to provide a piezoelectric piezoresistive electric field sensor with a silicon substrate reversely-bonded glass structure, which is used for realizing the technical effect of improving the measurement precision and sensitivity of the electric field sensor.
The invention provides a piezoelectric piezoresistive electric field sensor with a silicon substrate reversely-bonded glass structure, which comprises a substrate; a glass layer disposed on an upper surface of the substrate; a silicon substrate disposed on an upper surface of the glass layer; and a semiconductor thin film disposed on an upper surface of the silicon substrate; the upper surface of the silicon substrate is coupled with the lower surface of the semiconductor film through a first silicon oxide layer; a second silicon dioxide layer is arranged on the upper surface of the semiconductor film; a first through hole with a small upper part and a large lower part and in a circular truncated cone shape is formed in the central area of the silicon substrate; the central area of the glass layer is provided with an hourglass-shaped second through hole; the top of the second through hole is communicated with the bottom of the first through hole, and a piezoelectric crystal is arranged in a cavity formed after the communication; a first end of the piezoelectric crystal is bonded to the upper surface of the substrate; a second end of the piezoelectric crystal is coupled with the lower surface of the semiconductor film through the first silicon oxide layer; gaps exist between the outer wall of the piezoelectric crystal and the inner walls of the first through hole and the second through hole; two groups of ion doped regions communicated with the upper surface of the semiconductor film are arranged on the upper side of the semiconductor film, the two groups of ion doped regions are distributed in a cross shape, and the shape of each group of ion doped region is symmetrical; the second silicon dioxide layer is provided with a metal circuit and four electrodes; the four electrodes are arranged close to the same edge of the upper surface of the second silicon dioxide layer, and are connected with the ion doping area through the metal circuit and form a Wheatstone bridge.
Further, the thicknesses of the glass layer and the piezoelectric crystal are 500-600 μm.
Further, the side length of the piezoelectric crystal is 1000 μm or 2500 μm.
Further, the glass layer is made of borosilicate glass.
Further, the substrate is a PCB.
Further, the substrate is glass.
The invention has the beneficial effects that: the piezoelectric piezoresistive electric field sensor with the silicon substrate reversely-bonded glass structure provided by the invention can convert electric field measurement to be measured into mechanical deformation quantity of a piezoelectric crystal, and further convert the mechanical deformation quantity into output voltage quantity of an electric bridge; meanwhile, the silicon substrate is reversely arranged between the semiconductor film and the glass layer, so that the measurement accuracy and sensitivity of the electric field sensor are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments of the present invention will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope, and other related drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a cross-sectional view of a piezoelectric piezoresistive electric field sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a Wheatstone bridge according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of experimental results of the influence of the side length of a piezoelectric crystal on strain according to an embodiment of the present invention;
fig. 4 is a schematic diagram of experimental results of the influence of the thickness of the piezoelectric crystal on the strain according to the embodiment of the present invention.
Icon: 10-piezoresistance type electric field sensor; 100-substrate; 200-glass layers; 210-a second through hole; 300-silicon substrate; 310-a first through hole; 400-a first silicon oxide layer; 500-semiconductor thin films; 510-ion doped regions; 600-a second silicon dioxide layer; 610-metal lines; 620-electrode; 700-piezo-electric crystal.
Detailed Description
The technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, fig. 1 is a cross-sectional view of a piezoelectric piezoresistive electric field sensor according to an embodiment of the present invention.
In one implementation, an embodiment of the present invention provides a piezoelectric piezoresistive type electric field sensor 10 of a silicon substrate 300 inverted bonded glass structure, the piezoelectric piezoresistive type electric field sensor 10 comprising a substrate 100; a glass layer 200 disposed on an upper surface of the substrate 100; a silicon substrate 300 disposed on the upper surface of the glass layer 200; and a semiconductor thin film 500 disposed on the upper surface of the silicon substrate 300; the upper surface of the silicon substrate 300 is coupled with the lower surface of the semiconductor thin film 500 through the first silicon oxide layer 400; the upper surface of the semiconductor thin film 500 is provided with a second silicon oxide layer 600; a first through hole 310 with a small upper part and a large lower part in a round table shape is formed in the central area of the silicon substrate 300; the central region of the glass layer 200 is provided with an hourglass-shaped second through hole 210; the top of the second through hole 210 is communicated with the bottom of the first through hole 310, and a piezoelectric crystal 700 is installed in a cavity formed after the communication; a first end of the piezoelectric crystal 700 is bonded to the upper surface of the substrate 100; a second end of the piezoelectric crystal 700 is coupled to the lower surface of the semiconductor thin film 500 through the first silicon oxide layer 400; gaps exist between the outer wall of the piezoelectric crystal 700 and the inner wall of the first through hole 310 and the inner wall of the second through hole 210; two groups of ion doped regions 510 communicated with the upper surface of the semiconductor film 500 are arranged on the upper side of the semiconductor film 500, the two groups of ion doped regions 510 are distributed in a cross shape, and the shape of each group of ion doped regions 510 is symmetrical; the second silicon oxide layer 600 is provided with a metal wiring 610 and four electrodes 620; four electrodes 620 are disposed near the same edge of the upper surface of the second silicon oxide layer 600, and the four electrodes 620 are connected to the ion doped region 510 through metal lines 610 and form a wheatstone bridge.
The piezoelectric piezoresistive electric field sensor provided by the above embodiment can convert the electric field to be measured into the mechanical deformation of the piezoelectric crystal 700, and then into the output voltage of the bridge; meanwhile, the silicon substrate 300 is reversely arranged between the semiconductor thin film 500 and the glass layer 200, so that the measurement accuracy and sensitivity of the electric field sensor are improved.
Illustratively, the shape of the substrate 100 may be circular, square, rectangular, etc., and the various edge contours above the substrate 100 also match the shape of the substrate 100. The ion doped region 510 may be doped with boron ions (B+), with a doped B+ dose of 5×10 14 cm -2 。
In one embodiment, the material of the glass layer 200 may be borosilicate glass. It should be noted that other types of glass may be selected for the glass layer 200; even other insulating materials may be selected for replacement of the glass layer 200.
In one embodiment, in order to select an appropriate piezoelectric crystal 700, embodiments of the present invention also perform multiple sets of experiments on the side length of the piezoelectric crystal 700 to determine the optimal dimensions of the piezoelectric crystal 700. The experimental results are shown in FIG. 3. Keeping the height h=300 μm of the piezoelectric crystal 700 and the thickness d=10 μm of the semiconductor thin film 500 constant in fig. 3, the side lengths of the piezoelectric crystal 700 are 500 μm, 1000 μm, 1500 μm, 2000 μm and 2500 μm, respectively, and the broken lines in the figure are the edge positions of the piezoelectric crystal 700, it can be seen that as the size of the piezoelectric crystal 700 increases, the surface strain tensor of the thin film increases after decreasing, and the optimal size of the side length b of the piezoelectric material is 1000 μm or 2500 μm considering that the size of the piezoelectric crystal 700 is too small to cause an increase in the assembly difficulty.
In one embodiment, in order to select an appropriate piezoelectric crystal 700, embodiments of the present invention also perform multiple sets of experiments on the thickness of piezoelectric crystal 700 to determine the optimal dimensions of piezoelectric crystal 700. The experimental results are shown in FIG. 4. In fig. 4, when the side length b=500 μm of the piezoelectric crystal 700 and the thickness d=10 μm of the semiconductor thin film 500 are maintained, and the thicknesses of the piezoelectric crystal 700 are respectively 300 μm,500 μm,600 μm,900 μm and 1000 μm, the strain distribution near the boundary between the semiconductor thin film 500 and the piezoelectric crystal 700 can be seen as the height of the piezoelectric crystal 700 increases; the maximum strain tensor of the surface of the semiconductor thin film 500 increases, and the maximum strain is obtained near the boundary, and the piezoelectric crystal 700 with the thickness of 500-600 μm can be selected as the driving material of the sensor in combination with the actual thickness of the supporting material glass.
In one embodiment, the thickness of the semiconductor thin film 500 may be 10-20 μm. The thickness can be set according to practical requirements. For example, the thickness of the semiconductor thin film 500 may be set to any value between 10 μm and 20 μm such as 10 μm, 11 μm, 12 μm, or the like according to actual needs by a user.
In one embodiment, the substrate 100 may be selected from a PCB board or glass.
In summary, the embodiment of the invention provides a piezoelectric piezoresistive electric field sensor with a silicon substrate reversely bonded glass structure, which can convert the electric field to be measured into the mechanical deformation of a piezoelectric crystal and further into the output voltage of a bridge through the piezoelectric piezoresistive electric field sensor provided by the embodiment; meanwhile, the silicon substrate is reversely arranged between the semiconductor film and the glass layer, so that the measurement accuracy and sensitivity of the electric field sensor are improved.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (4)
1. A piezoelectric piezoresistive electric field sensor with a silicon substrate reversely bonded with a glass structure is characterized by comprising a substrate; a glass layer disposed on an upper surface of the substrate; a silicon substrate disposed on an upper surface of the glass layer; and a semiconductor thin film disposed on an upper surface of the silicon substrate; the upper surface of the silicon substrate is coupled with the lower surface of the semiconductor film through a first silicon oxide layer; a second silicon dioxide layer is arranged on the upper surface of the semiconductor film; a first through hole with a small upper part and a large lower part and in a circular truncated cone shape is formed in the central area of the silicon substrate; the central area of the glass layer is provided with an hourglass-shaped second through hole; the top of the second through hole is communicated with the bottom of the first through hole, and a piezoelectric crystal is arranged in a cavity formed after the communication; a first end of the piezoelectric crystal is bonded to the upper surface of the substrate; a second end of the piezoelectric crystal is coupled with the lower surface of the semiconductor film through the first silicon oxide layer; gaps exist between the outer wall of the piezoelectric crystal and the inner walls of the first through hole and the second through hole; two groups of ion doped regions communicated with the upper surface of the semiconductor film are arranged on the upper side of the semiconductor film, the two groups of ion doped regions are distributed in a cross shape, and the shape of each group of ion doped region is symmetrical; the second silicon dioxide layer is provided with a metal circuit and four electrodes; the four electrodes are arranged close to the same edge of the upper surface of the second silicon dioxide layer, are connected with the ion doping area through the metal circuit and form a Wheatstone bridge; the thicknesses of the glass layer and the piezoelectric crystal are 500-600 mu m; the side length of the piezoelectric crystal is 1000 μm or 2500 μm.
2. The piezoelectric piezoresistive electric field sensor of a silicon substrate-counter bonded glass structure according to claim 1, wherein the glass layer is made of borosilicate glass.
3. The piezoelectric piezoresistive electric field sensor of a silicon substrate-counter bonded glass structure according to claim 1, wherein the substrate is a PCB board.
4. The piezoelectric piezoresistive electric field sensor of a silicon substrate-counter bonded glass structure according to claim 1, wherein the substrate is glass.
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| CN202210043323.3A CN114487547B (en) | 2022-01-14 | 2022-01-14 | Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure |
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| CN202210043323.3A CN114487547B (en) | 2022-01-14 | 2022-01-14 | Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure |
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| CN114487547B true CN114487547B (en) | 2023-08-04 |
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Citations (7)
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| JPH06163941A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| JPH06163940A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| CN104237652A (en) * | 2014-09-03 | 2014-12-24 | 西安交通大学 | Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle |
| CN109212326A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN113567869A (en) * | 2021-06-01 | 2021-10-29 | 广西电网有限责任公司南宁供电局 | Battery voltage monitoring micro sensor and voltage monitoring method |
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- 2022-01-14 CN CN202210043323.3A patent/CN114487547B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163941A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| JPH06163940A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| CN104237652A (en) * | 2014-09-03 | 2014-12-24 | 西安交通大学 | Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle |
| CN109212326A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN113567869A (en) * | 2021-06-01 | 2021-10-29 | 广西电网有限责任公司南宁供电局 | Battery voltage monitoring micro sensor and voltage monitoring method |
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