CN114481313A - Epitaxial growth temperature measuring method and epitaxial equipment temperature calibration method - Google Patents
Epitaxial growth temperature measuring method and epitaxial equipment temperature calibration method Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 25
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- 238000001459 lithography Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 abstract description 24
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The epitaxial growth temperature measuring method comprises the steps of placing a substrate to be measured in a cavity of epitaxial equipment for epitaxial growth; acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity; comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity; the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested. The invention measures the epitaxial growth temperature by comparing the parameters of the current alignment mark with the parameters of the standard alignment mark, thereby avoiding the problems that the temperature measurement of the thermometer can not simulate the temperature environment in the cavity of the epitaxial equipment, artificial measurement errors and repeated measurement.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial growth temperature measuring method and an epitaxial equipment temperature calibrating method.
Background
Epitaxial growth refers to the growth of a single crystal layer having a certain requirement and having the same crystal orientation as the substrate on a single crystal substrate (wafer). For example, the principle of silicon epitaxial growth is to deposit silicon atoms generated by reaction (hydrogen reduction) or pyrolysis (thermal decomposition) of a highly volatile silicon source with hydrogen gas at a high temperature on a silicon substrate to form an epitaxial layer.
Epitaxial growth equipment generally adopts the pyrometer to monitor the temperature, if take place machine maintenance or shut down then need recalibrate the temperature, the temperature of calibrating generally adopts supporting thermoscope to carry out.
However, the method has the problems that the temperature environment in the cavity of the epitaxial equipment cannot be completely simulated, errors exist in manual operation, and repeated measurement is needed.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide an epitaxial growth temperature measurement method and an epitaxial device temperature calibration method, which can avoid the problems that the temperature measurement by a thermometer cannot simulate the temperature environment inside the cavity of the epitaxial device, artificial measurement errors, and repeated measurement.
A first aspect of the present invention provides an epitaxial growth temperature measurement method, the method including:
an epitaxial growth temperature measurement method, comprising:
placing a substrate to be tested in a cavity of epitaxial equipment for epitaxial growth;
acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity;
comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity;
the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested.
Preferably, before the step of placing the substrate to be tested in the cavity of the epitaxial device for epitaxial growth, the method further comprises the step of obtaining the corresponding relation between the standard alignment mark parameter and the temperature.
Preferably, the method for obtaining the correspondence between the standard alignment mark parameter and the temperature includes:
placing standard substrates with the same crystal orientation in a cavity of epitaxial equipment, and respectively carrying out epitaxial growth at different epitaxial growth temperatures;
obtaining standard alignment mark parameters of a standard substrate at each epitaxial growth temperature;
and (4) corresponding the standard alignment mark parameters to the epitaxial growth temperatures thereof one by one.
Preferably, when standard substrates of the same crystal orientation are subjected to epitaxial growth at different epitaxial growth temperatures respectively, the different epitaxial growth temperatures change in a stepwise manner within a first temperature range, wherein the temperature intervals between adjacent temperature values are the same.
Preferably, before the epitaxial growth, the alignment mark on the substrate to be tested and the alignment mark on the standard substrate have the same shape and size.
Preferably, the current alignment mark parameter and the standard alignment mark parameter are widths of the alignment marks.
Preferably, the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters includes: and comparing the width of the current alignment mark with the widths of a plurality of standard alignment marks.
Preferably, the current alignment mark and the standard alignment mark are a plurality of bar frames, and the standard alignment mark parameter is a width of any one of the bar frames or an average width of the bar frames.
Preferably, the current alignment mark parameter and the standard alignment mark parameter are signal values of the alignment mark.
Preferably, the acquired signal values of the current alignment mark include signal values of the current alignment mark in the X direction and signal values of the current alignment mark in the Y direction.
Preferably, the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters includes:
comparing the signal value of the current alignment mark in the X direction with the signal value of the standard alignment mark in the X direction to obtain an X-direction standard alignment mark with the minimum difference with the signal value of the current alignment mark in the X direction;
comparing the signal value of the current alignment mark in Y direction with the signal value of the standard alignment mark in Y direction to obtain a Y direction standard alignment mark with minimum difference with the signal value of the current alignment mark in Y direction,
and if the X-direction standard alignment mark is the same as the Y-direction standard alignment mark, the temperature corresponding to the same X-direction standard alignment mark and the same Y-direction standard alignment mark is the epitaxial growth temperature of the substrate to be detected.
Preferably, the current alignment mark parameter and the standard alignment mark parameter are a width of the alignment mark and a signal value of the alignment mark.
Preferably, the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters includes:
comparing the width of the current alignment mark with the width of the standard alignment mark to obtain a first standard alignment mark with the minimum width difference with the current alignment mark;
and comparing the signal value of the current alignment mark with the signal value of the standard alignment mark to obtain a second standard alignment mark with the minimum signal value difference with the current alignment mark, wherein the number of the second standard alignment marks is one or two.
Preferably, if any one of the first standard alignment mark and the second standard alignment mark is the same, the temperature corresponding to the width of the first standard alignment mark is the epitaxial growth temperature of the substrate; and if the first standard alignment mark and the second standard alignment mark are different, comparing the width of the current alignment mark with the width of the standard alignment mark again, and selecting the second smallest difference as the first standard alignment mark.
Preferably, the current alignment mark signal value is the shape matching degree of the current mark and a preset alignment mark; the standard alignment mark signal value is the shape matching degree of the standard alignment mark and the preset alignment mark.
Preferably, the current alignment mark parameters and the standard alignment mark parameters are acquired by an exposure device of a lithography machine.
A method of epitaxial device temperature calibration, the method comprising:
acquiring the display temperature of the epitaxial equipment;
acquiring the epitaxial growth temperature in the cavity of the epitaxial equipment according to the epitaxial growth temperature measuring method so as to obtain the temperature difference between the epitaxial growth temperature and the display temperature of the epitaxial equipment;
adding the temperature difference to the compensation of the epitaxial apparatus to complete the calibration.
According to the epitaxial growth temperature measuring method and the epitaxial equipment temperature calibrating method provided by the embodiment of the invention, the temperature inside the cavity of the epitaxial equipment is measured by comparing the parameters of the current alignment mark with the parameters of the standard alignment mark, so that the traditional temperature measuring method of the thermometer is replaced, and the problems that the temperature environment inside the cavity of the epitaxial equipment cannot be simulated by temperature measurement of the thermometer, artificial measurement errors exist and repeated measurement is needed are solved.
The embodiment of the invention realizes the measurement of the epitaxial growth temperature by utilizing the corresponding relation between the distortion of the alignment mark of the substrate and the temperature, does not need to additionally change the structure of the substrate, and has simple method and strong operability.
The embodiment of the invention utilizes the exposure machine of the photoetching machine to obtain the appearance or the signal value of the current alignment mark and the standard alignment mark, does not need to transform or increase equipment, has simple and convenient measurement process and low cost.
In the preferred embodiment of the invention, the measurement of the epitaxial growth temperature is realized by comparing the width of the alignment mark with the signal value of the alignment mark, so that the reading error in the comparison process of the width of the alignment mark alone is avoided, and the accuracy of the measurement result is ensured.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 shows a schematic structural diagram of an epitaxial apparatus;
FIG. 2 is a schematic diagram showing a cross-sectional structure of a buried layer pattern drifting and distorting in an epitaxial process;
fig. 3 is a schematic flow chart showing an epitaxial growth temperature measurement method according to a first embodiment of the present invention;
FIG. 4 is a flowchart illustrating a first embodiment of the present invention for obtaining the correspondence between standard alignment mark parameters and different epitaxial growth temperatures;
FIGS. 5a to 5g show the profile of a standard alignment mark obtained from a standard substrate at different growth temperatures;
fig. 6 shows the correspondence between the standard alignment mark signal value and different epitaxial growth temperatures according to the second embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1 shows a schematic structural diagram of an epitaxial apparatus; as shown in fig. 1, the epitaxial apparatus 100 includes a chamber 110, a support assembly 120, a first gas inlet assembly 130, and a second gas inlet assembly 140.
A support assembly 120 is arranged in the cavity 110, and the substrate 200 is carried by the support assembly 120 in the cavity 110; at the bottom of the support assembly 120 is a heating assembly 150 for heating the support assembly 120 on the heating assembly 150 and the substrate 200 on the support assembly 120. The first air intake assembly 130 is disposed above the support assembly 120, and a filter plate 131 is disposed inside the first air intake assembly 130, for example, to filter air entering from the first air intake assembly 130; the second air intake assembly 140 is disposed at one side of the cavity 110, and an air outlet 160 is disposed at one side of the cavity 110 opposite to the second air intake assembly 140.
During the epitaxial growth process, the substrate 200 is placed on the support assembly 120 inside the chamber 110; introducing protective gas into the cavity 110 through the first gas inlet assembly 130, and introducing reaction gas into the cavity 110 through the second gas inlet assembly 140; the temperature inside the chamber 110 is regulated by the heating assembly 150.
The temperature inside the cavity 110 is usually measured by a pyrometer, which is usually located at one or more positions of the cavity 110, so that the temperature at one or more positions inside the cavity 110 can only be obtained by the pyrometer, and the temperature environment inside the cavity of the epitaxial device cannot be simulated; in addition, due to errors in the artificial measurement, multiple repeated measurements are usually required.
In the epitaxial process, the newly grown single crystal must be grown in a sequential order strictly along the original crystal orientation of the substrate, depending on the planar anisotropy of the crystallographic planar growth. In the epitaxial front-end process, the surface discontinuity state of a Buried Layer (BL) caused by oxidation in the annealing process can also be upwards propagated in the epitaxial deposition, and the discontinuity position appearing on the surface of the formed epitaxial Layer after the epitaxial deposition is finished generates Pattern displacement and Pattern deformation relative to the discontinuity position of the Buried Layer surface under the epitaxial Layer, wherein the first direction parallel to the surface of the substrate is mainly shown as Pattern displacement, and the displacement in the first direction is called as Pattern Shift; the second direction perpendicular to the substrate surface is mainly expressed as a Pattern distortion, and the Pattern distortion in the second direction is called a Pattern distortion (Pattern distortion).
FIG. 2 is a schematic diagram showing a cross-sectional structure of a buried layer pattern drifting and distorting in an epitaxial process; as shown in fig. 2, a substrate 200 has a buried pattern 210, an epitaxial layer 220 is grown on the substrate 200, and the pattern width of the buried pattern 210' after the epitaxial layer 220 is grown is significantly narrowed and the position thereof is shifted.
The inventors of the present application further found that, during the epitaxial growth of the substrate, the topography of the buried layer pattern 210 'changes synchronously with the change of the epitaxial growth temperature, and there is a one-to-one correspondence relationship between the epitaxial growth temperature and the pattern distortion of the buried layer pattern 210'.
Usually, the substrate has alignment marks, which correspond to buried patterns on the substrate, and the alignment marks on the substrate are distorted during the epitaxial growth of the substrate. Wherein, the alignment mark on the substrate to be tested is equivalent to the buried layer pattern 210 before epitaxial growth in fig. 2, and the current alignment mark after epitaxial growth of the substrate to be tested is equivalent to the buried layer pattern 210' after epitaxial growth in fig. 2; similarly, the standard alignment marks on the standard substrate are equivalent to the buried patterns 210 before epitaxial growth in fig. 2, and the standard alignment marks after epitaxial growth of the standard substrate are equivalent to the buried patterns 210' after epitaxial growth in fig. 2.
Based on the above findings, a first embodiment of the present invention provides a method for measuring an epitaxial growth temperature, which is used to monitor an epitaxial growth temperature inside a cavity of an epitaxial apparatus.
Fig. 3 is a schematic flow chart showing an epitaxial growth temperature measurement method according to a first embodiment of the present invention, and as shown in fig. 3, the method includes:
s10: placing a substrate to be tested in a cavity of epitaxial equipment for epitaxial growth;
s20: acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity;
s30: comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity;
the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested.
As found out above, the distortion magnitude of the buried layer pattern has a one-to-one correspondence relation with the epitaxial growth temperature, namely the morphology of the buried layer pattern reflects the epitaxial growth temperature. In this embodiment, the corresponding relationship between the standard alignment mark parameters and different epitaxial growth temperatures is obtained in advance, the corresponding relationship between the standard alignment mark parameters and different epitaxial growth temperatures is used as a reference standard, when the current growth temperature of a certain epitaxial layer needs to be determined, the difference between the alignment mark parameters and the standard alignment mark parameters can be determined by comparing the current alignment mark parameters of the epitaxial layer with the standard alignment mark parameters, respectively, where the growth temperature corresponding to the standard alignment mark parameter with the smallest difference from the current alignment mark parameters is the growth temperature of the current epitaxial layer.
Fig. 4 is a flowchart illustrating a first embodiment of the present invention for obtaining a correspondence relationship between a standard alignment mark parameter and different epitaxial growth temperatures, where as shown in fig. 4, the method includes:
s001: and placing the standard substrate with the same crystal orientation in a cavity of the epitaxial equipment, and respectively carrying out epitaxial growth at different epitaxial growth temperatures.
Under the same epitaxial growth conditions, the pattern drift and pattern distortion of the substrates with different crystal orientations are different, in the embodiment, the material and crystal orientation of each standard substrate 300 are the same, so that under the same epitaxial growth conditions, the same pattern drift and pattern distortion are obtained; and each of the standard substrates 300 has the same alignment mark thereon. Before epitaxial growth is carried out, the shape and the size of the alignment mark on the standard substrate are the same as those of the alignment mark on the substrate to be detected. In a specific embodiment, the standard substrate 300 is, for example, a silicon (Si) substrate with a crystal orientation of [110 ].
In this step, the standard substrates 300 are respectively subjected to epitaxial growth at different epitaxial growth temperatures. In this embodiment, when the standard substrate 300 is a silicon substrate, hydrogen (H) is generated during the silicon (Si) vapor phase epitaxy process2) Silicon tetrachloride (SiCl) entering the chamber 110 from the first gas inlet assembly 1304) Or trichlorosilane (SiHCl)3) Silane (SiH)4) Or dichlorosilane (SiH)2Cl2) And enters the chamber 110 through the second gas inlet assembly 140, a high temperature chemical reaction is performed in the chamber 110, so that the silicon-containing reaction gas is reduced or thermally decomposed, and the generated silicon atoms are epitaxially grown on the surface of the standard substrate 300. The pattern of alignment marks on the standard substrate 300 is initiated during epitaxial growthAnd (5) generating distortion to form a standard alignment mark.
During epitaxial growth of the standard substrate 300, the growth temperature of different standard substrates 300 is varied stepwise within a first temperature range, wherein the temperature intervals between adjacent temperature values are the same. In this embodiment, the first temperature range is, for example, 1115 ℃ to 1145 ℃, and the temperature step is, for example, 5 ℃.
In other embodiments, the standard substrate 300 may also be a substrate made of other materials, such as sapphire, silicon carbide, gallium nitride, gallium arsenide substrate, etc., in this embodiment, the material of the standard substrate 300 is not limited, and when the material of the standard substrate 300 is changed, the first temperature range and the temperature step are also changed accordingly, which is not limited in this embodiment.
Further, during the epitaxial growth of the standard substrate 300, only the epitaxial growth temperature is changed, and other growth conditions, such as the used epitaxial equipment, the used growth source type, the concentration of the growth source, the growth time, and the like, are not changed.
S002: and acquiring standard alignment mark parameters of the standard substrate at each epitaxial growth temperature.
In this step, the standard substrate 300 after epitaxial growth at different temperatures is placed on the stage of the exposure apparatus of the lithography machine, and standard alignment mark parameters at different temperatures are obtained by the exposure apparatus of the lithography machine.
FIGS. 5a to 5g show the profile of a standard alignment mark obtained from a standard substrate at different growth temperatures; wherein, when the growth temperature is 1115 ℃, the first standard alignment mark morphology S01 obtained after the alignment mark is subjected to epitaxy is as shown in fig. 5 a; the growth temperature is 1120 ℃, and the appearance S02 of the second standard alignment mark obtained after the alignment mark is subjected to epitaxy is shown in FIG. 5 b; when the growth temperature is 1125 ℃, the appearance S03 of the third standard alignment mark obtained after the alignment mark is subjected to epitaxy is shown in FIG. 5 c; when the growth temperature is 1130 ℃, the shape of a fourth standard alignment mark S04 obtained after the alignment mark is subjected to epitaxy is shown in FIG. 5 d; when the growth temperature is 1135 ℃, the fifth standard alignment mark morphology S05 obtained after the alignment mark is subjected to epitaxy is shown in fig. 5 e; when the growth temperature is 1140 ℃, the sixth standard alignment mark morphology S06 obtained after the alignment mark is subjected to epitaxy is shown in fig. 5 f; the seventh standard alignment mark profile S07 obtained after the alignment mark was subjected to epitaxy at a growth temperature of 1145 ℃ is shown in fig. 5 g.
As shown in fig. 5a to 5g, there is a significant difference in the morphology of the standard alignment marks obtained at different growth temperatures. In this embodiment, the alignment marks on the standard substrate are a plurality of bar frames; the morphological difference of the standard alignment marks at different temperatures is reflected by a significant change in the width of the bar frame, specifically, from 1115 ℃ to 1145 ℃, the width of the bar frame in the morphology of the standard alignment marks is significantly narrowed. Based on this, the standard alignment mark parameter in this embodiment is the width of the standard alignment mark representing the morphology change.
Further, the width of the standard alignment mark can be obtained by an exposure device of a lithography machine. In this embodiment, the width of the standard alignment mark is the width of any one of the plurality of bar frames, for example, the width of the bar frame located at the center may be obtained. In another specific embodiment, the width of the standard alignment mark is an average width of the plurality of bar frames.
In this example, the widths of the standard alignment marks at different growth temperatures were W1(1115 ℃), W2(1120 ℃), W3(1125 ℃), W4(1130 ℃), W5(1135 ℃), W6(1140 ℃), W7(1145 ℃).
S003: and (4) corresponding the standard alignment mark parameters to the epitaxial growth temperatures thereof one by one.
In this embodiment, the first temperature range is, for example, 1115 ℃ to 1145 ℃, the temperature step is 5 ℃, and the standard alignment mark parameters are obviously changed by the change of the epitaxial growth temperature at an interval of 5 ℃, so as to prevent the standard alignment mark parameters from changing too little due to too small temperature step, and further prevent the error of the comparison result; meanwhile, the accuracy of the corresponding relation between the standard alignment mark parameters and the temperature is prevented from being reduced due to overlarge temperature steps, and the measurement precision of the current alignment mark is further prevented from being reduced.
It is understood that in other embodiments, the first temperature range and the temperature step may be set otherwise, and those skilled in the art may selectively set the first temperature range and the temperature step according to the material of the substrate and the requirement of measurement accuracy and precision, which is not limited by the embodiment.
After the corresponding relation between the standard alignment mark parameters and the temperature is obtained, the standard alignment mark parameters can be used as a reference standard in the epitaxial growth temperature measurement process of the epitaxial equipment.
Specifically, before epitaxial growth, the substrate to be measured and the standard substrate have alignment marks with the same shape and size. After epitaxial growth, the current alignment marks and the standard alignment marks are still a plurality of strip frames. It should be understood that in other embodiments, the alignment mark may also have other shapes, such as a cross shape, and the shape of the alignment mark is not limited in this embodiment.
In step S10, the substrate to be tested is placed in the cavity of the epitaxial device for epitaxial growth, a reaction gas is introduced into the cavity 110, the reaction gas performs a high temperature chemical reaction in the cavity 110, so that the silicon-containing reaction gas is reduced or thermally decomposed, and the generated silicon atoms epitaxially grow on the surface of the substrate to be tested. And the pattern of the alignment mark on the substrate to be detected is distorted in the epitaxial growth process to form the current alignment mark.
In step S20, the substrate to be measured after the epitaxial growth is placed on the stage of the exposure device of the lithography machine, and the current alignment mark parameter, that is, the width of the current alignment mark, is obtained by the exposure device of the lithography machine. When the width of the standard alignment mark is the width of any one of the plurality of bar frames, the width of the bar frame corresponding to the current alignment mark, for example, the width of the bar frame located at the center, needs to be obtained. When the width of the standard alignment mark is the average width of the plurality of bar frames, the average width of all the bar frames of the current alignment mark also needs to be obtained.
In step S30, the width of the current alignment mark of the substrate to be tested is compared with the width of each standard alignment mark, wherein the temperature corresponding to the standard alignment mark parameter having the smallest difference with the width of the current alignment mark is the epitaxial growth temperature of the substrate to be tested. For example, if the width of the current alignment mark is closest to the standard alignment mark parameter W5, the epitaxial growth temperature of the substrate to be tested is 1135 ℃ corresponding to the standard alignment mark parameter W5.
A second embodiment of the present invention provides a method for measuring epitaxial growth temperature, which is different from the first embodiment in that in this embodiment, the current alignment mark parameter and the standard alignment mark parameter are alignment mark signal values.
Specifically, the difference of the standard alignment marks at different temperatures is also represented by the difference of the signal values of the standard alignment marks acquired in the exposure device of the lithography machine. The exposure device of the lithography machine can evaluate the quality of the alignment mark through the width, the size, the edge angle, the boundary roughness and other dimensions to obtain a score, wherein the score is the shape matching degree of the current alignment mark and the standard alignment mark, namely the alignment mark signal value. The current alignment mark signal value is a shape matching degree between the current alignment mark and a preset alignment mark (for example, an alignment mark without epitaxial growth), and the standard alignment mark signal value is a shape matching degree between the standard alignment mark and a preset alignment mark (for example, an alignment mark without epitaxial growth). Compared with the first embodiment, the present embodiment provides a more comprehensive evaluation method by the epitaxial growth temperature measurement method for obtaining the alignment mark signal value.
Fig. 6 shows a corresponding relationship between standard alignment mark signal values and different epitaxial growth temperatures according to a second embodiment of the present invention, where the standard alignment mark signal values are obtained based on the standard alignment mark profiles shown in fig. 5a to 5g, where a Contrast X curve is signal values of the standard alignment mark at different epitaxial temperatures in the X direction (e.g., the directions of the standard alignment marks shown in fig. 5a to 5 g), and a Contrast Y curve is signal values of the standard alignment mark at different epitaxial temperatures in the Y direction (e.g., the directions of the standard alignment marks shown in fig. 5a to 5g are rotated by 90 degrees). In the embodiment, the signal values in different directions are obtained by measuring the standard alignment marks in different directions, so that the measurement accuracy is improved.
As shown in fig. 6, as the shape of the standard alignment marks changes, the signal values thereof also change significantly, wherein, since the shapes of different alignment marks are different, and the distortions in different directions are inconsistent at different epitaxial growth temperatures, resulting in inconsistent final scores, the optimal temperatures corresponding to different alignment marks are different, for example, in this embodiment, at 1130 ℃, the signal value of the standard alignment mark is the largest, and above or below the optimal temperature, the signal value of the corresponding standard alignment mark decreases.
The present embodiment measures the signal value of the current alignment mark to realize the measurement of the epitaxial growth temperature.
A second embodiment of the present invention provides a method for measuring an epitaxial growth temperature, including:
s10: placing a substrate to be tested in a cavity of epitaxial equipment for epitaxial growth;
s20: acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity;
s30: comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity;
the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested.
Step S10 of the present embodiment is the same as the first embodiment, and in step S20, the current alignment mark parameter is a signal value of the current alignment mark, where the signal value of the current alignment mark includes a signal value in the X direction of the current alignment mark and a signal value in the Y direction of the current alignment mark.
Step S30 of the present embodiment includes:
step S301: comparing the signal value of the current alignment mark in the X direction with the signal value of the standard alignment mark in the X direction to obtain an X-direction standard alignment mark with the minimum difference with the signal value of the current alignment mark in the X direction;
step S302: and comparing the signal value of the current alignment mark in the Y direction with the signal value of the standard alignment mark in the Y direction to obtain the Y-direction standard alignment mark with the minimum difference with the signal value of the current alignment mark in the Y direction.
And if the X-direction standard alignment mark is the same as the Y-direction standard alignment mark, the temperature corresponding to the same X-direction standard alignment mark and the same Y-direction standard alignment mark is the epitaxial growth temperature of the substrate to be detected. If the X-direction standard alignment mark is different from the Y-direction standard alignment mark, step S301 is performed again. And after S301 is carried out again, the standard alignment mark with the second smallest difference value is selected as the X-direction standard alignment mark.
The epitaxial growth temperature is measured through more comprehensive alignment mark signal values, and the evaluation mode is more comprehensive.
A third embodiment of the present invention provides a method for measuring epitaxial growth temperature, which is different from the first embodiment in that in this embodiment, the current alignment mark parameter and the standard alignment mark parameter are the width and the signal value of the alignment mark, so as to avoid human errors during the process of reading the width of the alignment mark.
The embodiment combines the width of the alignment mark and the signal value of the alignment mark to realize the measurement of the epitaxial growth temperature.
A third embodiment of the present invention provides a method for measuring an epitaxial growth temperature, including:
s10: placing a substrate to be tested in a cavity of epitaxial equipment for epitaxial growth;
s20: acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity;
s30: comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity;
the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested.
Step S10 of the present embodiment is the same as the first embodiment, and in step S20, the current overlay mark parameters are the width and signal value of the current overlay mark.
Step S30 of the present embodiment includes:
step S301': comparing the width of the current alignment mark with the width of the standard alignment mark to obtain a first standard alignment mark with the minimum width difference with the current alignment mark;
step S302': and comparing the signal value of the current alignment mark with the signal value of the standard alignment mark to obtain a second standard alignment mark with the minimum signal value difference from the current alignment mark, so as to verify the comparison result of the step S301'. In this step, there may be one or two second standard alignment marks, for example, the standard alignment mark signal value 0 corresponds to a temperature of 1115 ℃ and a temperature of 1145 ℃.
If any one of the first standard alignment mark and the second standard alignment mark is the same, the temperature corresponding to the first standard alignment mark is the epitaxial growth temperature of the substrate; and if the first standard alignment mark and the second standard alignment mark are not the same, re-performing step S301 ', and selecting the second smallest difference as the first standard alignment mark after re-performing step S301'.
A fourth embodiment of the present invention provides a method for calibrating temperature of an epitaxial device, where the method includes:
s01: acquiring the display temperature of the epitaxial equipment;
s02: the method for measuring the epitaxial growth temperature according to any embodiment obtains the epitaxial growth temperature in the cavity of the epitaxial device to obtain the temperature difference between the epitaxial growth temperature and the display temperature of the epitaxial device;
s03: the temperature difference is added to the compensation (offset) of the epitaxial equipment to complete the calibration.
According to the epitaxial growth temperature measuring method and the epitaxial equipment temperature calibrating method provided by the embodiment of the invention, the temperature inside the cavity of the epitaxial equipment is measured by comparing the parameters of the current alignment mark with the parameters of the standard alignment mark, so that the traditional temperature measuring method of the thermometer is replaced, and the problems that the temperature environment inside the cavity of the epitaxial equipment cannot be simulated by temperature measurement of the thermometer, artificial measurement errors exist and repeated measurement is needed are solved.
The embodiment of the invention realizes the measurement of the epitaxial growth temperature by utilizing the corresponding relation between the distortion of the alignment mark of the substrate and the temperature, does not need to additionally change the structure of the substrate, and has simple method and strong operability.
The embodiment of the invention utilizes the exposure machine of the photoetching machine to obtain the appearance or the signal value of the current alignment mark and the standard alignment mark, does not need to transform or increase equipment, has simple and convenient measurement process and low cost.
In the preferred embodiment of the invention, the measurement of the epitaxial growth temperature is realized by comparing the width of the alignment mark with the signal value of the alignment mark, so that the reading error in the comparison process of the width of the alignment mark alone is avoided, and the accuracy of the measurement result is ensured.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (17)
1. An epitaxial growth temperature measurement method, comprising:
placing a substrate to be tested in a cavity of epitaxial equipment for epitaxial growth;
acquiring current alignment mark parameters of the substrate to be detected after epitaxial growth in the cavity;
comparing the current alignment mark parameters with a plurality of preset standard alignment mark parameters to obtain the epitaxial growth temperature in the cavity;
the different standard alignment mark parameters correspond to different temperatures, and the temperature corresponding to the standard alignment mark parameter with the minimum difference with the current alignment mark parameter is the epitaxial growth temperature of the substrate to be tested.
2. The method of claim 1, further comprising the step of obtaining the correspondence between the standard alignment mark parameters and the temperature before the step of placing the substrate to be measured in the chamber of the epitaxial device for epitaxial growth.
3. The epitaxial growth temperature measurement method of claim 2, wherein the method of obtaining the correspondence between standard alignment mark parameters and temperature comprises:
placing standard substrates with the same crystal orientation in a cavity of epitaxial equipment, and respectively carrying out epitaxial growth at different epitaxial growth temperatures;
obtaining standard alignment mark parameters of a standard substrate at each epitaxial growth temperature;
and (4) corresponding the standard alignment mark parameters to the epitaxial growth temperatures thereof one by one.
4. The method of claim 3, wherein when standard substrates of the same crystal orientation are epitaxially grown at different epitaxial growth temperatures, respectively, the different epitaxial growth temperatures are varied stepwise within a first temperature range, and wherein temperature intervals between adjacent temperature values are the same.
5. The method of claim 3, wherein before the epitaxial growth, the alignment marks on the substrate to be measured and the standard substrate have the same shape and size.
6. The epitaxial growth temperature measurement method of claim 1, wherein the current alignment mark parameter and the standard alignment mark parameter are widths of the alignment marks.
7. The epitaxial growth temperature measurement method of claim 6, wherein the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters comprises: and comparing the width of the current alignment mark with the widths of a plurality of standard alignment marks.
8. The epitaxial growth temperature measurement method of claim 7, wherein the current alignment mark and the standard alignment mark are a plurality of bar frames, and the standard alignment mark parameter is a width of any one of the bar frames or an average width of the bar frames.
9. The epitaxial growth temperature measurement method of claim 1, wherein the current alignment mark parameter and the standard alignment mark parameter are signal values of an alignment mark.
10. The epitaxial growth temperature measurement method of claim 9, wherein the acquired signal values of the current alignment mark include signal values of the current alignment mark in the X direction and signal values of the current alignment mark in the Y direction.
11. The epitaxial growth temperature measurement method of claim 10, wherein the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters comprises:
comparing the signal value of the current alignment mark in the X direction with the signal value of the standard alignment mark in the X direction to obtain an X-direction standard alignment mark with the minimum difference from the signal value of the current alignment mark in the X direction;
comparing the signal value of the current alignment mark in Y direction with the signal value of the standard alignment mark in Y direction to obtain a Y direction standard alignment mark with minimum difference with the signal value of the current alignment mark in Y direction,
and if the X-direction standard alignment mark is the same as the Y-direction standard alignment mark, the temperature corresponding to the same X-direction standard alignment mark and the same Y-direction standard alignment mark is the epitaxial growth temperature of the substrate to be detected.
12. The epitaxial growth temperature measurement method of claim 1, wherein the current alignment mark parameter and the standard alignment mark parameter are a width of an alignment mark and a signal value of the alignment mark.
13. The epitaxial growth temperature measurement method of claim 12, wherein the step of comparing the current alignment mark parameter with a plurality of preset standard alignment mark parameters comprises:
comparing the width of the current alignment mark with the width of the standard alignment mark to obtain a first standard alignment mark with the minimum width difference with the current alignment mark;
and comparing the signal value of the current alignment mark with the signal value of the standard alignment mark to obtain a second standard alignment mark with the minimum signal value difference with the current alignment mark, wherein the number of the second standard alignment marks is one or two.
14. The epitaxial growth temperature measurement method of claim 13, wherein if any one of the first standard alignment mark and the second standard alignment mark is the same, the temperature corresponding to the width of the first standard alignment mark is the epitaxial growth temperature of the substrate; and if the first standard alignment mark and the second standard alignment mark are different, comparing the width of the current alignment mark with the width of the standard alignment mark again, and selecting the second smallest difference as the first standard alignment mark.
15. The epitaxial growth temperature measurement method of claim 9, wherein the current alignment mark signal value is a shape matching degree of the current mark and a preset alignment mark; the standard alignment mark signal value is the shape matching degree of the standard alignment mark and the preset alignment mark.
16. The epitaxial growth temperature measurement method of claim 1, wherein the current alignment mark parameters and the standard alignment mark parameters are obtained by an exposure apparatus of a lithography machine.
17. A method for temperature calibration of an epitaxial device, the method comprising:
acquiring the display temperature of the epitaxial equipment;
the epitaxial growth temperature measurement method according to any one of claims 1 to 16, acquiring an epitaxial growth temperature in a cavity of the epitaxial apparatus to obtain a temperature difference between the epitaxial growth temperature and a display temperature of the epitaxial apparatus;
adding the temperature difference to the compensation of the epitaxial apparatus to complete the calibration.
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