CN114481031A - Process for evaporating aluminum in graphite crucible for semiconductor production - Google Patents
Process for evaporating aluminum in graphite crucible for semiconductor production Download PDFInfo
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- CN114481031A CN114481031A CN202210127655.XA CN202210127655A CN114481031A CN 114481031 A CN114481031 A CN 114481031A CN 202210127655 A CN202210127655 A CN 202210127655A CN 114481031 A CN114481031 A CN 114481031A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Abstract
The invention discloses a process for evaporating aluminum in a graphite crucible for semiconductor production, and relates to the technical field of semiconductor production. The invention comprises the following steps: preheating a silicon wafer and a graphite crucible to 45-55 ℃; placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible; after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, and diffusing the treated aluminum steam to the silicon wafer and falling the treated aluminum steam onto the silicon wafer to form an inner-layer aluminum film. According to the invention, the coating is divided into the inner coating and the outer coating, so that the coating has better adhesiveness, the ultrasonic technology is adopted for assisting the coating, the dispersibility is higher, higher uniformity, thinner coating thickness and higher precision can be brought, and the problems of low aluminum film thickness quality control capability, unsatisfactory aluminum film uniformity and low product quality of the existing semiconductor aluminum evaporation process are solved.
Description
Technical Field
The invention belongs to the technical field of semiconductor production, and particularly relates to a process for evaporating aluminum in a graphite crucible for semiconductor production.
Background
The aluminum evaporation is one of key processes for providing uniform thin-film aluminum layers for connecting various semiconductor regions into an integrated circuit, and is also an important process for improving the conductivity of the integrated circuit, particularly, high-power devices and high-frequency devices have strict technical requirements on the uniformity and the thickness of the aluminum layer thin film, the aluminum evaporation process is an important process for semiconductor production, and the production task is to evaporate and plate an aluminum film on the inner surface of a semiconductor.
The basic process of vacuum aluminizing is as follows: and closing valves such as an inflation valve and a high vacuum valve, exhausting air to the evaporation chamber, closing a low vacuum valve when the pressure reaches 1-10 Pa, opening a high vacuum valve, exhausting air by using a high vacuum unit, heating the evaporation source for evaporation after the pressure in the evaporation chamber reaches a specified value, closing the high vacuum valve after evaporation, deflating the bell jar through the inflation valve, taking out a coated product, putting an aluminum rod in the aluminum rod, and evaporating aluminum of the next product.
The prior aluminum steaming process still has the following disadvantages in practical use:
1. the thickness and quality control capability of a semiconductor aluminum film of the existing aluminum evaporation process is low, the uniformity of the aluminum film is not ideal enough, the quality of the produced semiconductor product is low, and the product competitiveness is insufficient;
2. the adhesive force of the semiconductor aluminum film of the existing aluminum evaporation process is not ideal enough, and the aluminum film and the silicon material are easy to fall off, so that the service life of the produced semiconductor product is short.
Therefore, the existing aluminum steaming process cannot meet the requirements in practical use, so that an improved technology is urgently needed in the market to solve the problems.
Disclosure of Invention
The invention aims to provide a process for evaporating aluminum in a graphite crucible for semiconductor production, which has the advantages that a coating film is divided into an inner layer coating film and an outer layer coating film, so that the adhesion of the coating film is better, the ultrasonic technology is adopted for assisting the coating film, the dispersibility is higher, higher uniformity, thinner coating thickness and higher precision can be brought, and the problems of low aluminum film thickness quality control capability, unsatisfactory aluminum film uniformity and low product quality of the existing semiconductor aluminum evaporation process are solved.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention relates to a process for steaming aluminum by using a graphite crucible for semiconductor production, which comprises the following steps:
s1: preheating a silicon wafer and a graphite crucible to 45-55 ℃;
s2: placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible;
s3: after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, and diffusing the treated aluminum steam to a silicon wafer and falling the treated aluminum steam onto the silicon wafer to form an inner-layer aluminum film;
s4: then cooling the graphite crucible to enable the silicon wafer to be cooled and insulated for a period of time;
s5: and igniting the high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, and diffusing the treated aluminum steam to the silicon wafer and falling onto the silicon wafer to form an outer-layer aluminum film until the silicon wafer is steamed to reach a preset thickness.
Furthermore, a temperature sensor is arranged in the graphite crucible, the temperature in the crucible is acquired through the temperature sensor, the signal is amplified by an amplifier and then sent to a microprocessor, and the microprocessor operates a control algorithm and then outputs a control instruction, so that the temperature of the graphite crucible is adjusted, and the temperature value is displayed in real time.
Furthermore, a heating coil and a microwave generator are also arranged in the graphite crucible, the graphite crucible is preheated by adopting the coil, and the graphite crucible is coated by adopting the coil and the microwave generator simultaneously, so that the temperature in the graphite crucible is increased.
Further, the power of the ultrasonic generator is set to be 2.5KW, and the frequency is set to be 3.5 KHz.
Furthermore, the temperature in the graphite crucible is kept between 530 ℃ and 550 ℃ when the inner aluminum film is coated in the step S3, and the temperature in the graphite crucible is kept between 220 ℃ and 240 ℃ when the outer aluminum film is coated in the step S5.
Furthermore, the time interval between the inner-layer aluminum film coating and the outer-layer aluminum film coating in the step S4 is set to be 5-8 min.
The invention has the following beneficial effects:
1. the invention divides the coating into an inner coating and an outer coating, so that the adhesiveness of the coating is better, the ultrasonic technology is adopted for assisting the coating, the dispersibility is higher, higher uniformity, thinner coating thickness and higher precision can be brought, the invention improves the aluminum evaporation process, improves the uniformity of the aluminum film, reduces the product quality problem caused by uneven thickness of the aluminum film, and has lower modification cost and strong popularization.
2. The aluminum evaporation process disclosed by the invention has the advantages that the temperature of the graphite crucible is well controlled, so that the film coating of the silicon wafer is relatively stable, the product percent of pass is improved, the electric energy is saved, the production cost of the aluminum evaporation process is reduced by about 30%, and the product cost competitiveness is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example one
Referring to fig. 1, the present invention is a process for steaming aluminum in a graphite crucible for semiconductor production, comprising the following steps:
s1: preheating a silicon wafer and a graphite crucible to 45 ℃, arranging a temperature sensor in the graphite crucible, collecting the temperature in the crucible through the temperature sensor, amplifying a signal through an amplifier, and then sending the signal to a microprocessor, operating a control algorithm by the microprocessor, outputting a control instruction, adjusting the temperature of the graphite crucible, displaying a temperature value in real time, arranging a heating coil and a microwave generator in the graphite crucible, preheating the graphite crucible by adopting a coil, coating the graphite crucible by adopting the coil and the microwave generator simultaneously, and improving the temperature in the graphite crucible;
s2: placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible;
s3: after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, diffusing the treated aluminum steam to a silicon wafer and falling the aluminum steam onto the silicon wafer to form an inner aluminum film, and keeping the temperature in the graphite crucible at 530 ℃ when the inner aluminum film is coated;
s4: then cooling the graphite crucible to cool the silicon wafer and preserving the temperature for a period of time, wherein the time interval between the inner aluminum film coating and the outer aluminum film coating is set to be 5 min;
s5: and igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, diffusing the treated aluminum steam to the silicon wafer and falling the aluminum steam onto the silicon wafer to form an outer aluminum film, and keeping the temperature in the graphite crucible at 220 ℃ when the outer aluminum film is coated until the silicon wafer is evaporated to reach a preset thickness.
Example two
Referring to fig. 1, the present invention is a process for steaming aluminum in a graphite crucible for semiconductor production, comprising the following steps:
s1: preheating a silicon wafer and a graphite crucible to 55 ℃, arranging a temperature sensor in the graphite crucible, collecting the temperature in the crucible through the temperature sensor, amplifying a signal through an amplifier, and then sending the signal to a microprocessor, operating a control algorithm by the microprocessor, outputting a control instruction, adjusting the temperature of the graphite crucible, displaying the temperature value in real time, arranging a heating coil and a microwave generator in the graphite crucible, preheating the graphite crucible by adopting a coil, coating the graphite crucible by adopting the coil and the microwave generator simultaneously, and improving the temperature in the graphite crucible;
s2: placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible;
s3: after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, diffusing the treated aluminum steam to a silicon wafer and falling the aluminum steam onto the silicon wafer to form an inner aluminum film, and keeping the temperature in the graphite crucible at 550 ℃ during the film coating of the inner aluminum film;
s4: then cooling the graphite crucible to cool the silicon wafer and preserving the temperature for a period of time, wherein the time interval between the inner aluminum film coating and the outer aluminum film coating is set to be 8 min;
s5: and igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, diffusing the treated aluminum steam to the silicon wafer and falling the aluminum steam onto the silicon wafer to form an outer aluminum film, and keeping the temperature in the graphite crucible at 240 ℃ when the outer aluminum film is coated until the silicon wafer is evaporated to reach a preset thickness.
EXAMPLE III
Referring to fig. 1, the present invention is a process for steaming aluminum in a graphite crucible for semiconductor production, comprising the following steps:
s1: preheating a silicon wafer and a graphite crucible to 50 ℃, arranging a temperature sensor in the graphite crucible, collecting the temperature in the crucible through the temperature sensor, amplifying a signal through an amplifier, and then sending the signal to a microprocessor, operating a control algorithm by the microprocessor, outputting a control instruction, adjusting the temperature of the graphite crucible, displaying a temperature value in real time, arranging a heating coil and a microwave generator in the graphite crucible, preheating the graphite crucible by adopting a coil, coating the graphite crucible by adopting the coil and the microwave generator simultaneously, and improving the temperature in the graphite crucible;
s2: placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible;
s3: after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, diffusing the treated aluminum steam to a silicon wafer and falling the aluminum steam onto the silicon wafer to form an inner aluminum film, and keeping the temperature in the graphite crucible to be 540 ℃ when the inner aluminum film is coated;
s4: then cooling the graphite crucible to cool the silicon wafer and preserving the temperature for a period of time, wherein the time interval between the inner aluminum film coating and the outer aluminum film coating is set to be 7 min;
s5: and igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, setting the power of the ultrasonic generator to be 2.5KW and the frequency to be 3.5KHz, diffusing the treated aluminum steam to the silicon wafer and falling the aluminum steam onto the silicon wafer to form an outer aluminum film, and keeping the temperature in the graphite crucible at 230 ℃ when the outer aluminum film is coated until the silicon wafer is evaporated to reach a preset thickness.
The above are only preferred embodiments of the present invention, and the present invention is not limited thereto, and any modification, equivalent replacement, and improvement made to the technical solutions described in the above embodiments, and to some of the technical features thereof, are included in the scope of the present invention.
Claims (6)
1. A technology for evaporating aluminum in a graphite crucible for semiconductor production is characterized in that: the method comprises the following steps:
s1: preheating a silicon wafer and a graphite crucible to 45-55 ℃;
s2: placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible;
s3: after the vacuum pumping is finished, igniting a high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, and diffusing the treated aluminum steam to a silicon wafer and falling the treated aluminum steam onto the silicon wafer to form an inner-layer aluminum film;
s4: then cooling the graphite crucible to enable the silicon wafer to be cooled and insulated for a period of time;
s5: and igniting the high-purity aluminum steam source to generate aluminum steam, starting an ultrasonic generator, carrying out ultrasonic treatment on the aluminum steam under the action of an ultrasonic external field, and diffusing the treated aluminum steam to the silicon wafer and falling onto the silicon wafer to form an outer-layer aluminum film until the silicon wafer is steamed to reach a preset thickness.
2. The process of claim 1, wherein a temperature sensor is arranged in the graphite crucible, the temperature sensor collects the temperature in the crucible, the signal is amplified by an amplifier and then sent to a microprocessor, and the microprocessor operates a control algorithm and then outputs a control instruction, so that the temperature of the graphite crucible is adjusted and the temperature value is displayed in real time.
3. The process of claim 1, wherein the graphite crucible is further provided with a heating coil and a microwave generator, the graphite crucible is preheated by the coil, and the graphite crucible is coated by the coil and the microwave generator, so as to increase the temperature in the graphite crucible.
4. The process of claim 1, wherein the power of the ultrasonic generator is set to 2.5KW, and the frequency is set to 3.5 KHz.
5. The process of claim 1, wherein the temperature in the graphite crucible is maintained at 530 to 550 ℃ when the inner aluminum film is coated in S3, and the temperature in the graphite crucible is maintained at 220 to 240 ℃ when the outer aluminum film is coated in S5.
6. The process of claim 1, wherein the time interval between the coating of the inner aluminum film and the coating of the outer aluminum film in S4 is set to be 5-8 min.
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| CN202210127655.XA CN114481031A (en) | 2022-02-11 | 2022-02-11 | Process for evaporating aluminum in graphite crucible for semiconductor production |
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| CN202210127655.XA CN114481031A (en) | 2022-02-11 | 2022-02-11 | Process for evaporating aluminum in graphite crucible for semiconductor production |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117305985A (en) * | 2023-11-29 | 2023-12-29 | 北京青禾晶元半导体科技有限责任公司 | Graphite crucible, preparation method thereof and silicon carbide single crystal growth method |
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| US20160199907A1 (en) * | 2013-08-29 | 2016-07-14 | European Space Agency | Manufacturing of a metal component or a metal matrix composite component involving contactless induction of high-frequency vibrations |
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| CN111235529A (en) * | 2020-03-26 | 2020-06-05 | 武汉华星光电半导体显示技术有限公司 | Evaporation heating device and control method |
| CN111575654A (en) * | 2020-05-21 | 2020-08-25 | 南京航空航天大学 | Ultrasonic vibration assisted vacuum micro-evaporation plating equipment |
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2022
- 2022-02-11 CN CN202210127655.XA patent/CN114481031A/en active Pending
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| CN101452846A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Thick aluminum film forming process |
| US20160199907A1 (en) * | 2013-08-29 | 2016-07-14 | European Space Agency | Manufacturing of a metal component or a metal matrix composite component involving contactless induction of high-frequency vibrations |
| CN104498880A (en) * | 2014-12-16 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing large-area high-quality thick aluminum film by adopting discontinuous coevaporation for multiple times |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117305985A (en) * | 2023-11-29 | 2023-12-29 | 北京青禾晶元半导体科技有限责任公司 | Graphite crucible, preparation method thereof and silicon carbide single crystal growth method |
| CN117305985B (en) * | 2023-11-29 | 2024-03-29 | 北京青禾晶元半导体科技有限责任公司 | Graphite crucible, preparation method thereof and silicon carbide single crystal growth method |
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