CN114474440A - Method for controlling adjustment precision of fine adjustment device - Google Patents

Method for controlling adjustment precision of fine adjustment device Download PDF

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Publication number
CN114474440A
CN114474440A CN202210256897.9A CN202210256897A CN114474440A CN 114474440 A CN114474440 A CN 114474440A CN 202210256897 A CN202210256897 A CN 202210256897A CN 114474440 A CN114474440 A CN 114474440A
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wafer
objective table
fine adjustment
axis
fine
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CN114474440B (en
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高阳
张宁宁
吕孝袁
葛凡
周鑫
蔡国庆
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Jiangsu Jingchuang Advanced Electronic Technology Co Ltd
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Jiangsu Jingchuang Advanced Electronic Technology Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/70Determining position or orientation of objects or cameras
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

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  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Theoretical Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a method for controlling the adjustment precision of a fine adjustment device, which at least comprises the following steps: s1, placing the wafer on an objective table; s2, moving the fine adjustment device to a position coaxial with the objective table; s3, adjusting the wafer to a position coaxial with the objective table by the fine adjustment device; s4, determining the position relation between the wafer and the objective table through visual detection, and determining a first distance between the axis of the wafer and the axis of the objective table and the offset direction of the axis of the wafer relative to the axis of the objective table when determining that the position relation between the wafer and the objective table does not meet the requirement; and S5, determining an adjusting position to which the fine adjusting device needs to move when performing subsequent wafer adjustment, wherein the adjusting position is the position of the axis of the fine adjusting device after moving the first distance from the position coaxial with the objective table to the deviation correcting direction, and the deviation correcting direction is opposite to the offset direction. The scheme can ensure the position precision of the wafer when the wafer is subsequently adjusted, and is favorable for ensuring the stable realization of subsequent processing.

Description

Method for controlling adjustment precision of fine adjustment device
Technical Field
The invention relates to the field of semiconductor processing, in particular to a method for controlling the adjustment precision of a fine adjustment device for adjusting the position of a wafer.
Background
In the process of ring cutting and ring removing of the wafer, the stable realization of subsequent processing can be ensured only by keeping the wafer and the objective table in a coaxial state.
Therefore, before the ring cutting or ring removing operation, the position of the wafer on the stage needs to be adjusted by the fine adjustment device so that they are coaxial. However, after the fine adjustment device is adjusted, there is still a positional deviation between the wafer and the stage, which brings about a great uncertainty to the subsequent wafer processing.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provide a method for controlling the adjustment precision of a fine adjustment device.
The purpose of the invention is realized by the following technical scheme:
the fine adjustment device adjustment precision control method at least comprises the following steps:
s1, placing the wafer on an objective table;
s2, moving the fine adjustment device to a position coaxial with the objective table;
s3, adjusting the wafer to a position coaxial with the objective table as much as possible by a fine adjustment device;
s4, determining the position relation between the wafer and the objective table through visual detection, and determining a first distance between the axis of the wafer and the axis of the objective table and the offset direction of the axis of the wafer relative to the axis of the objective table when determining that the position relation between the wafer and the objective table does not meet the requirement;
and S5, determining an adjusting position to which the fine tuning device needs to move when performing subsequent wafer adjustment, wherein the adjusting position is a position where the axis of the fine tuning device moves the first distance from a position coaxial with the objective table to a deviation correcting direction, and the deviation correcting direction is opposite to the offset direction.
Preferably, the fine adjustment device is a three-jaw centering device or a four-jaw centering device driven by a power source, and the center of an inscribed circle of a fine adjustment jaw of the fine adjustment device is kept on the axis of the fine adjustment device.
Preferably, during the wafer adjustment process, the bottom of the wafer is blown.
Preferably, when the position of the wafer and the stage is confirmed again not to satisfy the requirement, the steps of S2-S5 are executed.
Preferably, after the adjusting position is determined, the axis of the fine adjustment device is moved to the adjusting position, the wafer on the objective table is adjusted again, after the adjustment, whether the positions of the wafer and the objective table meet the requirements or not is confirmed again through visual detection, and when the requirements are met, the fine adjustment mechanism is adjusted to the adjusting position and then the wafer is adjusted when the subsequent wafer adjustment is carried out.
Preferably, when the position of the wafer and the object stage is determined again to meet the requirement, a group of detection holes in the object stage are observed through the photographing device, and when an image meeting the requirement is not obtained at one detection hole, the position of the wafer and the object stage is determined not to meet the requirement; when an image meeting the requirement is acquired at one detection hole, acquiring the lens center coordinate when the image is shot; after obtaining a lens center coordinate at each detection hole, checking whether the lens center coordinates meet the requirements, and if so, determining that the positions of the wafer and the objective table meet the requirements; otherwise, the wafer and the stage position are determined to be not satisfactory.
The fine adjustment device adjustment precision control method at least comprises the following steps:
s1, placing the wafer on an objective table;
s2, moving the fine adjustment device to a position coaxial with the objective table;
s3, adjusting the wafer to a position coaxial with the objective table as much as possible by a fine adjustment device;
s4, determining the position relation between the wafer and the objective table through visual detection, and determining a first distance between the axis of the wafer and the axis of the objective table and the offset direction of the axis of the wafer relative to the axis of the objective table when determining that the position relation between the wafer and the objective table does not meet the requirement;
and S5, determining an adjusting position to which the fine-tuning device needs to move when performing subsequent wafer adjustment, wherein the adjusting position is a position where the centers of inscribed circles of a group of fine-tuning claws of the fine-tuning device move for the first distance from the axis of the objective table along a deviation rectifying direction when the axis of the fine-tuning device is coaxial with the objective table, and the deviation rectifying direction is opposite to the deviation rectifying direction.
Preferably, the fine adjustment device is a three-jaw centering chuck or a four-jaw centering chuck, and each fine adjustment jaw is connected with a linear moving device.
Preferably, after the adjusting position is determined, the axis of the fine adjustment device is moved to the adjusting position, the wafer on the objective table is adjusted again, after the adjustment, whether the positions of the wafer and the objective table meet the requirements or not is confirmed again through visual detection, and when the requirements are met, the fine adjustment mechanism is adjusted to the adjusting position and then the wafer is adjusted when the subsequent wafer adjustment is carried out.
Preferably, when the position of the wafer and the stage is confirmed again not to satisfy the requirement, the steps of S20-S50 are executed.
The technical scheme of the invention has the advantages that:
according to the scheme, after the fine adjustment device is adjusted, the effectiveness of the fine adjustment device is determined, and after the deviation exists in the adjustment of the fine adjustment device, the position of the fine adjustment device is adjusted according to the position deviation between the wafer and the objective table, so that the position precision of the wafer can be ensured during subsequent wafer adjustment, and the stable realization of subsequent processing is facilitated.
According to the scheme, after the adjusting position is determined, the fine adjusting position of the fine adjusting device is adjusted, and the effectiveness of the adjustment is confirmed again, so that the accuracy of the adjustment of the fine adjusting device is fully guaranteed, and the stability in subsequent use is guaranteed.
The method for determining the circle center coordinate is high in accuracy, and meanwhile, when the image is collected, the lens is moved to the position coaxial with the detection hole, then the image is collected, so that the corresponding image can be found as soon as possible, and the working efficiency is improved. After 4 detection coordinates are determined, the 4 detection coordinates are subjected to accounting, so that the accuracy of the finally calculated circle center coordinates can be effectively ensured.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a top view of a wafer positioned on a stage having four inspection holes in accordance with the present invention;
FIG. 3 is a top view of the present invention with the tympanum region of the wafer coaxially disposed on the stage;
FIG. 4 is an enlarged view of area A of FIG. 3;
FIG. 5 is a flow chart illustrating the process of the present invention with post adjustment verification;
fig. 6 is a schematic flow chart of embodiment 2 of the present invention.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. The embodiments are merely exemplary for applying the technical solutions of the present invention, and any technical solution formed by replacing or converting the equivalent thereof falls within the scope of the present invention claimed.
In the description of the schemes, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the embodiment, the operator is used as a reference, and the direction close to the operator is a proximal end, and the direction away from the operator is a distal end.
The fine tuning device adjustment accuracy control method disclosed by the present invention is explained with reference to the accompanying drawings, as shown in fig. 1, which at least comprises the following steps:
s1, placing the wafer 1 on the objective table 4; in specific implementation, the wafer 1 in the material box can be moved to the objective table 4 through the feeding mechanical arm; of course, in other embodiments, the wafer 1 may be placed on the stage 4 by manual loading.
S2, moving the fine-tuning device to a position coaxial with the object stage 4;
s3, the fine adjustment device adjusts the wafer 1 to a position as coaxial as possible with the stage 4;
s4, confirming the position relation between the wafer 1 and the objective table 4 through visual detection, and confirming a first distance between the axial line of the wafer 1 and the axial line of the objective table 4 and the offset direction of the axial line of the wafer 1 relative to the axial line of the objective table 4 when confirming that the position relation between the wafer 1 and the objective table 4 does not meet the requirement;
and S5, determining an adjusting position to which the fine adjustment device needs to move when performing subsequent adjustment on the wafer 1, wherein the adjusting position is a position where the axis of the fine adjustment device moves the first distance from a position coaxial with the objective table 4 to a deviation rectifying direction, and the deviation rectifying direction is opposite to the offset direction.
By adopting the mode, the adjustment effectiveness of the fine adjustment device can be effectively determined, and after the adjustment of the fine adjustment device is determined to have deviation, the position of the fine adjustment device is adjusted according to the position deviation between the wafer 1 and the objective table 4, so that the position precision of the wafer 1 can be ensured during subsequent adjustment of the wafer 1, and the stable realization of subsequent processing is favorably ensured.
In this embodiment, the adjustment of the wafer 1 during the ring cutting process of the taidrum ring 2 of the wafer 1 is taken as an example for explanation, when the ring cutting process is performed, the wafer 1 needs to be placed on the stage 4, and then the adjustment of the wafer 1 is performed through the fine adjustment device, the fine adjustment device is a three-jaw centering device or a four-jaw centering device driven by one power source, the fine adjustment device is connected with a moving mechanism for driving the fine adjustment device to move, and the moving mechanism drives the fine adjustment device to move horizontally and lift. During adjustment, the fine adjustment device takes a three-jaw pneumatic chuck as an example, the circle centers of inscribed circles of three fine adjustment jaws of the fine adjustment device are kept on the axis of the fine adjustment device, the fine adjustment device moves to a state coaxial with the objective table 4, at the moment, the three fine adjustment jaws are arranged around the periphery of the Tai-drum ring 2 of the wafer 1, the inscribed circles of the three fine adjustment jaws are coaxial with the objective table, and then the three fine adjustment jaws synchronously move towards the Tai-drum ring 2 and shrink to a preset position so as to realize adjustment of the position of the wafer 1.
During the adjustment of the wafer 1, the bottom of the wafer 1 may be blown, so that the contact area between the wafer 1 and the stage 4 is reduced to reduce the friction between the wafer 1 and the stage 4 during the movement, thereby reducing the risk of damage to the tai-drum ring 2. During specific implementation, a plurality of air passages may be formed in the object stage 4, one ends of the air passages extend to the top surface of the object stage 4, and the other ends of the air passages extend to the bottom surface or the side surface of the object stage 4 and are connected with an air blowing device through an external pipeline.
In S4, the photographing device used for the visual inspection may be various known cameras, CCDs, cameras, and the like, and preferably, the photographing device is a known photographing microscope with an image capturing function, the photographing device is disposed above the stage 4 and connected to a structure (not shown in the figure) for driving the stage to translate, and a lens of the photographing device faces the stage 4.
In the visual inspection, it can be determined whether the wafer 1 and the stage 4 are in a coaxial state by various known methods. For example, in one embodiment, the process described in application No. 202111317629.5 can be used to determine whether there is a misalignment between the wafer 1 and the stage 4, and the magnitude of the misalignment and the corresponding direction of the misalignment.
In a preferred embodiment, the S4 process may be implemented by the following identification method:
in the implementation of the recognition method, as shown in fig. 2, a set of inspection holes 5 and a light source (not shown) illuminating the inspection holes 5 are provided on the stage 4, and the axes of the inspection holes 5 are parallel to the axis of the stage 4.
The number of the detection holes 5 can be designed according to needs, the axes of several detection holes 5 are distributed in a polygon shape, the circumcircle of the polygon is concentric with the objective table 4, and the diameter of the circumcircle is equivalent to the outer diameter of the Taiwan ring 2 of the wafer 1. In this embodiment, the number of the detection holes 5 is four, and they are distributed in a square or rectangular shape, and more preferably, they are distributed in a square shape.
The light source is a point light source with adjustable brightness, the point light source is positioned below the object stage 4, the light source can preferably face the detection hole 5 which is rotated above the object stage 4, the object stage 4 is driven by the driving device to rotate, the object stage 4 rotates to enable the detection holes 5 to correspond to the light source positions in sequence, when one detection hole 5 corresponds to the light source position, light of the light source can penetrate through the detection hole 5, and the structure can reduce the light source as much as possible and simplify the structure for driving the vision acquisition device to move.
As shown in fig. 2, when the wafer 1 and the stage 4 are adjusted to be coaxial, the outer circumference of the tambour ring 2 of the wafer 1 is located at the four inspection holes 5 and covers a partial area of each inspection hole 5. When the first part of each detection hole 5 is positioned at the inner side of the outer circumference of the Taiwan ring 2 and the second part is positioned at the outer side, when one detection hole 5 rotates to correspond to the position of the light source, the first part cannot transmit light, so that the first part appears black on an image collected by the photographing device; the second part is a section of film 3 outside the tympanum 2, which can transmit light, so that the image collected by the photographing device is close to white, and finally, obvious black-white intersection lines can appear in the image collected by the photographing device at each detection hole 5, and at the moment, the black-white intersection lines are the outer circumference of the tympanum 2.
Therefore, in S4, a visual edge finding method may be used to find a detection coordinate meeting the requirement at each of the identification holes, and after four detection coordinates are obtained and determined to be accurate, the center coordinates of the wafer 1 are calculated according to a set of the detection coordinates.
When each detection coordinate is obtained, the optical axis of the lens of the photographing device moves along the extending direction of a virtual line 10 according to a bisection method, the virtual line 10 is perpendicular to and intersects with the axis of the object stage 4 and the axis of the detection hole 5 corresponding to the light source position, when the corresponding point of the optical axis of the lens on the image is determined to be located at the position of a black-white intersection line on the image according to the image collected by the photographing device at a position, the coordinate of the specific point on the optical axis of the lens in the basic coordinate system is determined to be the detection coordinate to be searched, and more preferably the coordinate of the optical center or focus of the lens or the projection point of the optical axis of the lens on the object stage in the basic coordinate system, the basic coordinate system is a coordinate system which is constructed by taking two branch lines which are perpendicular to the axis of the object stage and are perpendicular to each other as an X axis and a Y axis, when the circle center coordinate of the wafer is subsequently calculated, the X coordinate and the Y coordinate of any point on the axis of the wafer, namely the circle center coordinate, are mainly calculated according to the acquired X coordinate and the acquired Y coordinate of the optical centers of the lenses, so that the distance and the offset direction between the circle center coordinate and the X coordinate and the Y coordinate of any point on the axis of the objective table in a basic coordinate system can be calculated according to the circle center coordinate and the X coordinate and the Y coordinate of any point on the axis of the objective table.
In the specific visual edge finding, as shown in fig. 3 and 4, after one inspection hole 5 corresponds to the light source position, the optical axis of the lens may be set to move between a first intersection point a and a second intersection point b of the virtual line 10 and the inspection hole 5, where the first intersection point a is closer to the axis of the stage 4 than the second intersection point b.
And S40, the photographing device moves to enable the optical axis of the lens to move to a first middle point O position between the first intersection point a and the second intersection point b.
S41, the image is collected by the photographing device, and the RGB color of the corresponding point of the optical axis of the lens on the collected image is confirmed to be close to white or close to black; when it is determined to be near black, S42 is performed, and when it is determined to be near white, S43 is performed.
S42, the photographing device moves to move the optical axis of the lens to a position of a second intermediate point (not shown in the figure) between the first intermediate point O and the second intersection point b, the photographing device captures an image, and it is confirmed again that the RGB color of the corresponding point of the optical axis of the lens on the captured image is near white or near black.
And S43, moving the photographing device to move the optical axis of the lens to a third intermediate point between the first intermediate point O and the first intersection point a, acquiring the image by the photographing device, and confirming that the RGB color of the corresponding point of the optical axis of the lens on the acquired image is close to white or close to black again.
And when the subsequent dichotomy is determined according to the colors determined by the S42 and the S43, continuing the dichotomy in the corresponding moving interval until the corresponding point of the optical axis of the lens on the image is determined to be closest to a black-white intersection line on the image according to the image, wherein the X coordinate and the Y coordinate of any point on the optical axis of the lens in the basic coordinate system are the detection coordinates to be searched.
After the detection coordinate of one detection hole 5 is obtained, the object stage 4 rotates by 90 degrees, so that the second detection hole 5 rotates to correspond to the light source position, and the detection coordinate of the second detection hole 5 at the detection hole 5 is obtained according to the process. The object stage 4 rotates 90 degrees again, so that the third detection hole 5 rotates to correspond to the light source position, and the detection coordinate of the detection hole 5 of the third detection hole 5 is obtained according to the process. And the object stage 4 rotates 90 degrees again, so that the detection hole 5 of the fourth detection hole 5 rotates to correspond to the light source position, and the calculation point and the detection coordinate of the detection hole 5 of the fourth detection hole 5 are obtained according to the process.
Further, after the four detection coordinates are obtained, it is necessary to determine whether the detection coordinates are accurate, so that the center coordinates of the wafer 1 can be determined more accurately.
Specifically, the radius of four circles is obtained by acquiring four detection coordinates, wherein the center and radius of one circle can be obtained by three detection coordinates, and the calculation is carried out according to the standard equation (x-a) of the circle2+(y−b)2=R2And (6) performing calculation.
Comparing the maximum value and the minimum value of the four radiuses, if the difference value of the four radiuses is smaller than a threshold value, selecting the four detection coordinates accurately, selecting the center coordinate of the circle with the smallest radius as the center coordinate of the wafer 1 in the four circles, wherein the center coordinate is the X coordinate and the Y coordinate of any point on the axis of the wafer 1 in the basic coordinate system, the X coordinate and the Y coordinate of any point on the axis of the object stage and the detection hole in the basic coordinate system are determined, and the X coordinate and the Y coordinate of any point on the optical axis of the lens in the basic coordinate system can be determined according to the movement amount of the moving device.
Otherwise, if the four detection coordinates are selected incorrectly, the calculation is performed again after the four detection coordinates need to be determined again until the four detection coordinates meet the requirements. After the coordinates of the center of the circle of the wafer 1 are determined, the first distance and the offset direction can be determined according to the determined coordinates of any point on the axis of the stage 4.
As shown in fig. 5, after the adjustment position is determined, the effectiveness of the fine adjustment device in adjusting the wafer 1 at the adjustment position needs to be verified, so that in S5, after the adjustment position is determined, S6 is further included, after the axis of the fine adjustment device is moved to the adjustment position, the wafer 1 on the stage 4 is adjusted again, after the adjustment, whether the positions of the wafer 1 and the stage 4 meet the requirements is confirmed again through visual inspection, and when the requirements are met, when the adjustment of the wafer 1 is subsequently performed, the fine adjustment mechanism is adjusted to the adjustment position, and then the adjustment of the wafer 1 is performed.
When determining whether the positions of the wafer 1 and the stage 4 meet the requirement again, the method in S4 may be adopted for determining, or may be implemented by other methods, for example, in this embodiment, the four inspection holes 5 on the stage 4 may be observed by a photographing device, and when an image meeting the requirement is not obtained at one inspection hole 5, it is determined that the positions of the wafer 1 and the stage 4 do not meet the requirement; when an image meeting the requirement is acquired at one detection hole 5, acquiring the lens center coordinate when the image is shot; after a lens center coordinate is obtained at each detection hole 5, checking whether the lens center coordinates meet requirements, and if so, determining that the positions of the wafer 1 and the objective table 4 meet the requirements; otherwise, the positions of the wafer 1 and the stage 4 are determined to be not satisfactory.
The specific steps of S6 are as follows:
s61, the objective table 4 first makes a detection hole 5 on it correspond to the light source position, the photographing device moves to the position where the optical axis of the lens is located in the detection hole 5, preferably, the photographing device moves to the position where the lens is coaxial with the detection hole 5, and the photographing device collects the image of the local area in the detection hole 5; the size of the image may be 1/10 of the cross-sectional area of the inspection opening 5, for example, but may be larger or smaller, and is selected according to actual needs.
S62, determining whether the image meets the requirement, if yes, executing S63; otherwise, go to S64; when the image is determined to be in a black-and-white intersection line, the image is determined to meet the requirement, otherwise, the image does not meet the requirement when the image is provided with the black-and-white intersection line which is a straight line passing through the center of the image or a preset distance away from the center of the image. The preset distance may be designed according to needs, and may be, for example, within 1mm, which is not limited herein. The reason why the straight black-white intersection line is judged whether to exist is that the photographing device only collects the image of a small part of the reference hole, only a small section of the outer circumference of the tympanum ring 2 exists in the image, and the circle can be regarded as formed by sequentially connecting a plurality of straight lines end to end, so that the straight line can be determined only by determining whether to exist and then determining the position of the straight line.
S63, when the image is collected, the coordinate of the optical center of the lens of the photographing device in the basic coordinate system is used as the lens center coordinate, and S65 is executed; the basic coordinate system is the coordinate system determined in step S4, and the lens center coordinate may be a focal coordinate of the lens, a coordinate of a projection point of the optical axis of the lens on the stage, or a coordinate of an artificial set point on the optical axis of the lens. In the subsequent calculation, the corresponding circle is actually calculated according to the X coordinate and the Y coordinate of the optical center of the lens, and the projection of the finally calculated circle on the object stage 4 is the projection of the outer circumference of the tympanum 2 on the object stage 4.
S64, judging whether the image count reaches a set value, if not, after the photographing device moves to a position, acquiring the image of the local area in the detection hole 5 again, and executing S62; if yes, the object stage 4 is determined not to be aligned with the wafer 1, and an alarm is given. The image count can be designed according to actual needs, for example, 5-15 images can be acquired at one detection hole 5. In this step, when the photographing device moves, the optical axis of the lens is moved in the vicinity of the axis of the inspection hole 5, for example, the lens is moved within a range of 2mm from the axis of the inspection hole 5.
S65, judging whether the number of the acquired lens center coordinates reaches a target value; if not, executing S66, if yes, executing S67; because there are four inspection holes 5, a lens center coordinate is collected at each inspection hole 5, and correspondingly, the number of the lens center coordinates is 4.
S66, rotating the object stage 4 by 90 degrees to enable the next detection hole 5 to correspond to the light source, moving the photographing device to enable the optical axis of the lens of the photographing device to be coaxial with the detection hole 5, then acquiring the image of the local area in the detection hole 5, and executing S62;
s67, calculating the radius of a group of circles according to the acquired coordinates of the lens centers; taking four lens center coordinates as an example, the three lens center coordinates can calculate the radius of a circle and the circle, so that the four lens center coordinates can calculate the radius of four circles; and comparing the maximum value and the minimum value in the set of calculated radiuses, and if the difference value of the maximum value and the minimum value is smaller than the error, determining that the coordinates of the center of the lens are accurate. That is, the maximum value and the minimum value of the four radii are compared, and when the difference value of the maximum value and the minimum value is smaller than the error, the central coordinates of a group of lenses are determined to be accurate, and the positions of the wafer 1 and the objective table 4 are determined to meet the requirements. The error may be designed according to needs, and for example, may be set to be less than 1mm, which is not limited herein. Otherwise, the coordinates of the centers of the four lenses are determined to be inaccurate, and the coordinates of the centers of the four lenses can be obtained again for judgment again.
Of course, as shown in fig. 5, when it is determined in S6 that the positions of the wafer 1 and the stage 4 do not meet the requirement, the above-mentioned processes of S1-S6 may be repeated until the fine adjustment device moves to the adjustment position to adjust the wafer 1, and when the positions of the wafer 1 and the stage 4 meet the requirement, the adjustment position is determined at this time to control the fine adjustment device to perform the subsequent adjustment of the wafer 1.
Example 2
The difference between this embodiment and the above embodiment 1 is the structure of the fine adjustment device and the adjustment process of the fine adjustment device after determining the adjustment position.
In this embodiment, the trimming device is a three-jaw centering chuck or a four-jaw centering chuck, and each trimming jaw is connected with a linear moving device, which may be a linear motor or a hydraulic cylinder, etc., i.e., in this embodiment, each trimming jaw is independently movable, rather than having to move together as in embodiment 1, so that after determining the deviation between the wafer 1 and the stage 4, the axial position of the trimming device can be kept unchanged, and the position of the wafer 1 can be adjusted by adjusting the position of each trimming jaw.
Specifically, as shown in fig. 6, the method at least includes the following steps:
s10, placing the wafer 1 on the objective table 4;
s20, moving the fine-tuning device to a position coaxial with the object stage 4;
s30, the fine adjustment device adjusts the wafer 1 to a position as coaxial as possible with the stage 4;
s40, confirming the position relation between the wafer 1 and the objective table 4 through visual detection, and confirming a first distance between the axial line of the wafer 1 and the axial line of the objective table 4 and the offset direction of the axial line of the wafer 1 relative to the axial line of the objective table 4 when confirming that the position relation between the wafer 1 and the objective table 4 does not meet the requirement;
and S50, determining an adjustment position to which the fine adjustment device needs to move when the fine adjustment device performs subsequent adjustment on the wafer 1, wherein the adjustment position is a position where the centers of inscribed circles of a group of fine adjustment claws of the fine adjustment device are moved by the first distance from the axis of the objective table 4 along a deviation rectification direction when the axis of the fine adjustment device is coaxial with the objective table, and the deviation rectification direction is opposite to the deviation direction.
The invention has various embodiments, and all technical solutions formed by adopting equivalent transformation or equivalent transformation are within the protection scope of the invention.

Claims (10)

1. The fine adjustment device adjustment precision control method is characterized by comprising the following steps: at least comprises the following steps:
s1, placing the wafer on an objective table;
s2, moving the fine adjustment device to a position coaxial with the objective table;
s3, adjusting the wafer to a position coaxial with the objective table as much as possible by a fine adjustment device;
s4, determining the position relation between the wafer and the objective table through visual detection, and determining a first distance between the axis of the wafer and the axis of the objective table and the offset direction of the axis of the wafer relative to the axis of the objective table when determining that the position relation between the wafer and the objective table does not meet the requirement;
and S5, determining an adjusting position to which the fine tuning device needs to move when performing subsequent wafer adjustment, wherein the adjusting position is a position where the axis of the fine tuning device moves the first distance from a position coaxial with the objective table to a deviation correcting direction, and the deviation correcting direction is opposite to the offset direction.
2. The fine adjustment device adjustment accuracy control method according to claim 1, characterized in that: the fine adjustment device is a three-jaw centering device or a four-jaw centering device driven by a power source, and the center of an inscribed circle of a fine adjustment jaw of the fine adjustment device is kept on the axis of the fine adjustment device.
3. The fine adjustment device adjustment accuracy control method according to claim 1, characterized in that: and in the process of adjusting the wafer, blowing air to the bottom of the wafer.
4. The fine adjustment device adjustment accuracy control method according to claim 1, characterized in that: after the adjusting position is determined, the axis of the fine adjustment device is moved to the adjusting position, the wafer on the objective table is adjusted again, after the adjustment, whether the positions of the wafer and the objective table meet the requirements or not is confirmed again through visual detection, and when the requirements are met, the fine adjustment mechanism is adjusted to the adjusting position and then the wafer is adjusted when the subsequent wafer adjustment is carried out.
5. The fine adjustment device adjustment accuracy control method according to claim 4, characterized in that: when the position of the wafer and the stage is not satisfied, the steps S2-S5 are executed.
6. The fine adjustment device adjustment accuracy control method according to claim 4, characterized in that: when the position of the wafer and the objective table is determined to meet the requirement again, observing a group of detection holes in the objective table through the photographing device, and when an image meeting the requirement is not obtained at one detection hole, determining that the position of the wafer and the objective table does not meet the requirement; when an image meeting the requirement is acquired at one detection hole, acquiring the lens center coordinate when the image is shot; after obtaining a lens center coordinate at each detection hole, checking whether the lens center coordinates meet the requirements, and if so, determining that the positions of the wafer and the objective table meet the requirements; otherwise, the wafer and the stage position are determined to be not satisfactory.
7. The fine adjustment device adjustment precision control method is characterized by comprising the following steps: at least comprises the following steps:
s10, placing the wafer on an objective table;
s20, moving the fine adjustment device to a position coaxial with the objective table;
s30, adjusting the wafer to a position coaxial with the objective table as much as possible by a fine adjustment device;
s40, determining the position relation between the wafer and the objective table through visual detection, and determining a first distance between the axis of the wafer and the axis of the objective table and the offset direction of the axis of the wafer relative to the axis of the objective table when determining that the position relation between the wafer and the objective table does not meet the requirement;
and S50, determining an adjusting position to which the fine-tuning device needs to move when performing subsequent wafer adjustment, wherein the adjusting position is a position where the centers of inscribed circles of a group of fine-tuning claws of the fine-tuning device move for the first distance from the axis of the objective table along a deviation rectifying direction when the axis of the fine-tuning device is coaxial with the objective table, and the deviation rectifying direction is opposite to the deviation rectifying direction.
8. The fine adjustment device adjustment accuracy control method according to claim 7, characterized in that: the fine adjustment device is a three-jaw centering chuck or a four-jaw centering chuck, and each fine adjustment jaw is connected with a linear moving device.
9. The fine adjustment device adjustment accuracy control method according to claim 7, characterized in that: after the adjusting position is determined, the axis of the fine adjustment device is moved to the adjusting position, the wafer on the objective table is adjusted again, after the adjustment, whether the positions of the wafer and the objective table meet the requirements or not is confirmed again through visual detection, and when the requirements are met, the fine adjustment mechanism is adjusted to the adjusting position and then the wafer is adjusted when the subsequent wafer adjustment is carried out.
10. The fine adjustment device adjustment accuracy control method according to claim 9, characterized in that: when the position of the wafer and the stage is not satisfied, the steps S20-S50 are executed.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117038495A (en) * 2023-10-10 2023-11-10 浙江果纳半导体技术有限公司 Wafer detection mechanism, detection method and wafer transmission device

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000222784A (en) * 1999-02-01 2000-08-11 Ricoh Co Ltd Glass disk centering device
JP2002176093A (en) * 2000-12-05 2002-06-21 Kawasaki Heavy Ind Ltd Work treatment method and equipment and robot therefor
JP2007200965A (en) * 2006-01-24 2007-08-09 Shin Etsu Handotai Co Ltd Jig for alignment between semiconductor wafer and external circumferential ring, and plasma etching metehod of semiconductor wafer
JP2013030703A (en) * 2011-07-29 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd Alignment method and alignment mechanism for wafer ring
CN103219269A (en) * 2012-01-19 2013-07-24 中国科学院沈阳自动化研究所 Wafer pre-locating device based on machine vision and method thereof
CN104779191A (en) * 2014-01-10 2015-07-15 株式会社迪思科 Mark detecting method
CN106158715A (en) * 2015-04-24 2016-11-23 上海微电子装备有限公司 Prealignment device and method for wafer
CN107039320A (en) * 2015-11-12 2017-08-11 株式会社迪思科 Rotating device
CN206450193U (en) * 2017-02-24 2017-08-29 东旭科技集团有限公司 Base plate glass off-line measurement platform
CN107863311A (en) * 2017-11-03 2018-03-30 上海华力微电子有限公司 It is a kind of to detect and correct wafer and the device and method of cavity objective table skew
CN111063636A (en) * 2019-11-28 2020-04-24 华虹半导体(无锡)有限公司 Wafer horizontal deviation detection method, detection device and furnace tube equipment
CN111645064A (en) * 2019-03-04 2020-09-11 北京北方华创微电子装备有限公司 Manipulator position calibration device and method and manipulator control system
CN112008595A (en) * 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 Wafer grinding device and grinding method
CN212392219U (en) * 2020-06-29 2021-01-22 安徽熙泰智能科技有限公司 Device for detecting and calibrating position of semiconductor wafer
CN112490150A (en) * 2020-11-17 2021-03-12 北京北方华创微电子装备有限公司 Method for detecting wafer placement state and semiconductor process equipment
CN113066746A (en) * 2020-01-02 2021-07-02 长鑫存储技术有限公司 Pre-alignment device and pre-alignment method applied to same
CN113172778A (en) * 2021-04-28 2021-07-27 华虹半导体(无锡)有限公司 Taizhou ring removing method and positioning device for Taizhou ring removing
CN113921437A (en) * 2021-10-09 2022-01-11 上海果纳半导体技术有限公司 Wafer pre-alignment device and pre-alignment method

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000222784A (en) * 1999-02-01 2000-08-11 Ricoh Co Ltd Glass disk centering device
JP2002176093A (en) * 2000-12-05 2002-06-21 Kawasaki Heavy Ind Ltd Work treatment method and equipment and robot therefor
JP2007200965A (en) * 2006-01-24 2007-08-09 Shin Etsu Handotai Co Ltd Jig for alignment between semiconductor wafer and external circumferential ring, and plasma etching metehod of semiconductor wafer
JP2013030703A (en) * 2011-07-29 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd Alignment method and alignment mechanism for wafer ring
CN103219269A (en) * 2012-01-19 2013-07-24 中国科学院沈阳自动化研究所 Wafer pre-locating device based on machine vision and method thereof
CN104779191A (en) * 2014-01-10 2015-07-15 株式会社迪思科 Mark detecting method
CN106158715A (en) * 2015-04-24 2016-11-23 上海微电子装备有限公司 Prealignment device and method for wafer
CN107039320A (en) * 2015-11-12 2017-08-11 株式会社迪思科 Rotating device
CN206450193U (en) * 2017-02-24 2017-08-29 东旭科技集团有限公司 Base plate glass off-line measurement platform
CN107863311A (en) * 2017-11-03 2018-03-30 上海华力微电子有限公司 It is a kind of to detect and correct wafer and the device and method of cavity objective table skew
CN111645064A (en) * 2019-03-04 2020-09-11 北京北方华创微电子装备有限公司 Manipulator position calibration device and method and manipulator control system
CN111063636A (en) * 2019-11-28 2020-04-24 华虹半导体(无锡)有限公司 Wafer horizontal deviation detection method, detection device and furnace tube equipment
CN113066746A (en) * 2020-01-02 2021-07-02 长鑫存储技术有限公司 Pre-alignment device and pre-alignment method applied to same
CN212392219U (en) * 2020-06-29 2021-01-22 安徽熙泰智能科技有限公司 Device for detecting and calibrating position of semiconductor wafer
CN112008595A (en) * 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 Wafer grinding device and grinding method
CN112490150A (en) * 2020-11-17 2021-03-12 北京北方华创微电子装备有限公司 Method for detecting wafer placement state and semiconductor process equipment
CN113172778A (en) * 2021-04-28 2021-07-27 华虹半导体(无锡)有限公司 Taizhou ring removing method and positioning device for Taizhou ring removing
CN113921437A (en) * 2021-10-09 2022-01-11 上海果纳半导体技术有限公司 Wafer pre-alignment device and pre-alignment method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117038495A (en) * 2023-10-10 2023-11-10 浙江果纳半导体技术有限公司 Wafer detection mechanism, detection method and wafer transmission device
CN117038495B (en) * 2023-10-10 2024-01-30 浙江果纳半导体技术有限公司 Wafer detection mechanism, detection method and wafer transmission device

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