CN114465202A - IGBT over-temperature protection circuit and method thereof, motor controller and vehicle - Google Patents

IGBT over-temperature protection circuit and method thereof, motor controller and vehicle Download PDF

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Publication number
CN114465202A
CN114465202A CN202210182985.9A CN202210182985A CN114465202A CN 114465202 A CN114465202 A CN 114465202A CN 202210182985 A CN202210182985 A CN 202210182985A CN 114465202 A CN114465202 A CN 114465202A
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igbt
over
temperature
temperature protection
module
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桂振钊
周安健
杜长虹
朱天宇
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Chongqing Changan New Energy Automobile Technology Co Ltd
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Chongqing Changan New Energy Automobile Technology Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses an IGBT (insulated gate bipolar transistor) over-temperature protection circuit and a method thereof, a motor controller and a vehicle, wherein the circuit comprises a temperature acquisition module, a reference voltage module, a voltage comparison module and an over-temperature protection switch control module, wherein the temperature acquisition module, the reference voltage module and the over-temperature protection switch control module are respectively connected with the voltage comparison module, and the switching-on signal input and output ends of the over-temperature protection switch control module are respectively used for being connected with a driving chip and the base electrode of an IGBT; the direct current power supply end of the temperature acquisition module is used for being connected with a first power supply, and the direct current power supply end of the reference voltage module is used for being connected with a second power supply. The IGBT over-temperature protection circuit is higher in speed, efficiency and reliability.

Description

IGBT over-temperature protection circuit and method thereof, motor controller and vehicle
Technical Field
The invention relates to the technical field of automobiles, in particular to an IGBT over-temperature protection circuit and method, a motor controller and a vehicle.
Background
Recently, silicon carbide MOS (insulated gate field effect transistor) technology is widely concerned, and is expected to replace the application of IGBT (insulated gate bipolar transistor) in the field of new energy automobiles in the future. However, considering that the silicon carbide MOS transistor is high in cost, complex in process and low in yield, the IGBT is still the mainstream application at present. By comparing the IGBT test characteristics of England, Annemei, Fuji, Stard, Zhongche and BYD, the use temperature range of most IGBTs is between minus 40 ℃ and 125 ℃. Through short-circuit test and black module test analysis, the IGBT is easy to be burnt out due to over-temperature under the conditions of instantaneous large current and continuous large current. The torque is out of control, the current is suddenly increased or the instant short circuit is caused by emergencies such as strong vibration, slippage, strong electromagnetic interference, device failure and the like on the whole vehicle. Although discrete single-chip IGBTs have been produced, the mainstream in the market at present is a module integrating 6 paths of IGBTs of the english flying ice together, so once one path of IGBT burns out due to over-temperature, the whole IGBT integrated module is scrapped, and therefore it is very important to protect the IGBTs from being damaged due to over-temperature in advance and quickly.
Disclosure of Invention
The invention aims to provide an IGBT over-temperature protection circuit, a method thereof, a motor controller and a vehicle, wherein the IGBT over-temperature protection circuit is higher in speed, efficiency and reliability.
In order to achieve the purpose, the invention provides an IGBT over-temperature protection circuit, which comprises a temperature acquisition module, a reference voltage module, a voltage comparison module and an over-temperature protection switch control module, wherein the temperature acquisition module, the reference voltage module and the over-temperature protection switch control module are respectively connected with the voltage comparison module; the direct-current power supply end of the temperature acquisition module is used for being connected with a first power supply, and the direct-current power supply end of the reference voltage module is used for being connected with a second power supply;
when the temperature of the IGBT is detected to be greater than a preset temperature threshold value, the voltage comparison module outputs a low level to the over-temperature protection switch control module, the over-temperature protection switch control module is turned off, and the turn-on signal is stopped from being input to the IGBT, so that the IGBT is turned off;
when the temperature of the IGBT is detected to be less than or equal to the preset temperature threshold value, the voltage comparison module outputs a high level to the over-temperature protection switch control module, the over-temperature protection switch control module is conducted, and a turn-on signal is input to the IGBT to enable the IGBT to be conducted.
Further, the temperature acquisition module comprises a thermistor and a first current limiting resistor; the voltage comparison module comprises a comparator; one end of the thermistor is grounded, and the other end of the thermistor is connected with the in-phase input end of the comparator; one end of the first current-limiting resistor is used for being connected with a first power supply, and the other end of the first current-limiting resistor is connected with the non-inverting input end of the comparator.
Furthermore, the reference voltage module comprises a second current-limiting resistor and a first voltage-dividing resistor, one end of the second current-limiting resistor is used for being connected with a second power supply, the other end of the second current-limiting resistor is connected with one end of the first voltage-dividing resistor, the other end of the first voltage-dividing resistor is grounded, a connecting node between the second current-limiting resistor and the first voltage-dividing resistor is connected with the inverting input end of the comparator, the positive power supply end of the comparator is connected with one end, far away from the first voltage-dividing resistor, of the second current-limiting resistor, the negative power supply end of the comparator is grounded, and the signal output end of the comparator is connected with the over-temperature protection switch control module.
Further, the over-temperature protection switch control module comprises a triode, the base of the triode is connected with the signal output end of the comparator, the collector of the triode is used for being connected with the modulation signal input end of the driving chip, and the emitter of the triode is used for being connected with the modulation signal output end of the base of the IGBT.
The invention also provides a motor controller which comprises at least one IGBT, and each IGBT is correspondingly provided with the IGBT over-temperature protection circuit.
Further, the number of IGBTs is six.
Further, the IGBT is model number sda 950HTX75P6 HB.
The invention also provides an IGBT over-temperature protection method, which utilizes the motor controller and comprises the following steps:
the temperature acquisition module in each IGBT over-temperature protection circuit acquires the temperature of the corresponding IGBT and transmits the temperature to the voltage comparison module;
the voltage comparison module judges whether the temperature of the IGBT is greater than a preset temperature threshold value or not;
if yes, the voltage comparison module outputs a low level to the over-temperature protection switch control module, the over-temperature protection switch control module is turned off, and the turn-on signal is stopped from being input to the IGBT, so that the IGBT is turned off;
otherwise, the voltage comparison module outputs a high level to the over-temperature protection switch control module, the over-temperature protection switch control module is conducted, and a turn-on signal is input to the IGBT to enable the IGBT to be conducted.
Further, the preset temperature threshold is 105 ℃.
The invention also provides a vehicle comprising the motor controller.
Compared with the prior art, the invention has the following advantages:
according to the IGBT over-temperature protection circuit and the method thereof, the motor controller and the vehicle, the over-temperature signal is not required to be transmitted back to the driving chip (MCU) for judgment and control, the PWM wave path from the rear end of the driving chip to the IGBT is directly cut off, the switching-off can be realized, the speed is higher, the efficiency is higher, the MCU program disorder error can be avoided, the protection cannot be realized, and the reliability is higher; and each IGBT can be subjected to over-temperature protection, so that the reliability is improved, and particularly, the over-temperature protection circuit is designed on six bridge arms, so that the condition that one bridge arm cannot be protected when being detected is avoided.
Drawings
FIG. 1 is a block diagram of an IGBT over-temperature protection circuit of the present invention;
FIG. 2 is a circuit diagram of an IGBT over-temperature protection circuit of the invention;
fig. 3 is a schematic diagram of an IGBT over-temperature protection circuit in three phases of the motor controller U, V, W according to the present invention.
FIG. 4 is a flow chart of the IGBT over-temperature protection method of the invention;
fig. 5 is a schematic structural diagram of a driving chip according to the present invention.
In the figure:
1-a temperature acquisition module, an RT-thermistor and an R-first current limiting resistor; 2-reference voltage module, RFj-second current limiting resistor, RFi-first voltage dividing resistor; 3-a voltage comparison module, a U-comparator; 4-an over-temperature protection switch control module and a Q-triode; g1-first IGBT, G2-second IGBT, G3-third IGBT, G4-fourth IGBT, G5-fifth IGBT, G6-sixth IGBT.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings.
Referring to fig. 1 and fig. 2, the embodiment discloses an IGBT over-temperature protection circuit, which includes a temperature acquisition module 1, a reference voltage module 2, a voltage comparison module 3, and an over-temperature protection switch control module 4, where the temperature acquisition module 1, the reference voltage module 2, and the over-temperature protection switch control module 4 are respectively connected to the voltage comparison module 3, and a turn-on signal input and output ends of the over-temperature protection switch control module 4 are respectively used for being connected to a driving chip and a base of an IGBT; the direct-current power supply end of the temperature acquisition module 1 is used for being connected with a first power supply, and the direct-current power supply end of the reference voltage module 2 is used for being connected with a second power supply;
when the temperature of the IGBT is detected to be greater than a preset temperature threshold value, the voltage comparison module 3 outputs a low level to the over-temperature protection switch control module 4, the over-temperature protection switch control module 4 is turned off, and the turn-on signal is stopped from being input to the IGBT, so that the IGBT is turned off;
when the temperature of the IGBT is detected to be less than or equal to the preset temperature threshold value, the voltage comparison module 3 outputs a high level to the over-temperature protection switch control module 4, the over-temperature protection switch control module 4 is switched on, and a switching-on signal is input to the IGBT to switch on the IGBT.
In this embodiment, the first power supply and the second power supply are transformers. In some embodiments, other types of power sources are possible, and are not limited herein.
In this embodiment, the temperature acquisition module 1 includes a thermistor RT and a first current limiting resistor R; the voltage comparison module 3 comprises a comparator U; one end of the thermistor RT is grounded, and the other end of the thermistor RT is connected with the in-phase input end of the comparator U; one end of the first current limiting resistor R is used for being connected with a first power supply, and the other end of the first current limiting resistor R is connected with the non-inverting input end of the comparator U. The model of the thermistor is MF52 series 10K, and according to the temperature and resistance table of the thermistor, the resistance value is 336.6K omega at the temperature of 40 ℃ below zero, 0.588K omega at the temperature of 105 ℃ and 0.1854K omega at the temperature of 150 ℃. In some embodiments, the type of the thermistor may be other types, and is not limited herein.
In this embodiment, the reference voltage module 2 includes a second current-limiting resistor RFj and a first voltage-dividing resistor RFi, one end of the second current-limiting resistor RFj is configured to be connected to a second power supply, the other end of the second current-limiting resistor RFj is connected to one end of the first voltage-dividing resistor RFi, the other end of the first voltage-dividing resistor RFi is grounded, a connection node between the second current-limiting resistor RFj and the first voltage-dividing resistor RFi is connected to an inverting input terminal of a comparator U, a positive power terminal of the comparator U is connected to one end of the second current-limiting resistor RFj away from the first voltage-dividing resistor RFi, a negative power terminal of the comparator U is grounded, and a signal output terminal of the comparator U is connected to the over-temperature protection switch control module 4.
In this embodiment, the over-temperature protection switch control module 4 includes a triode Q, a base of the triode Q is connected with a signal output end of the comparator U, a collector of the triode Q is a modulation signal input end for being connected with the driving chip, and an emitter of the triode Q is a modulation signal output end for being connected with a base of the IGBT. The triodes are 6 NPN triodes of type 2N3904, and in some embodiments, other types of triodes are also possible, which are not limited herein.
Referring to fig. 3, the embodiment further discloses a motor controller, which includes at least one IGBT, and each IGBT is correspondingly provided with the above-mentioned IGBT over-temperature protection circuit.
In the present embodiment, the number of IGBTs is six.
In the present embodiment, the IGBT model is stara GD950HTX75P6 HB.
The six IGBTs are respectively a first IGBT, a second IGBT, a third IGBT, a fourth IGBT, a fifth IGBT and a sixth IGBT; each IGBT is correspondingly provided with an IGBT over-temperature protection circuit. The IGBT is model number sda GD950HTX75P6HB, and in some embodiments, the GBT may be model number other.
The first IGBT and the second IGBT are respectively arranged in one-to-one correspondence with the U-phase upper bridge arm and the U-phase lower bridge arm of the motor controller;
the third IGBT and the fourth IGBT are respectively arranged in one-to-one correspondence with the V-phase upper bridge arm and the V-phase lower bridge arm of the motor controller;
the fifth IGBT and the sixth IGBT are respectively arranged in one-to-one correspondence with the W-phase upper bridge arm and the W-phase lower bridge arm of the motor controller;
the first power supply provides direct-current power supply signals VCCH _ U, VCCL _ U, VCCH _ V, VCCL _ V, VCCH _ W, VCCL _ W to the temperature acquisition modules 1 in the six IGBT over-temperature protection circuits respectively, the six direct-current power supply signals are provided by six secondary side outputs of the same customized first power supply after voltage stabilization, the six direct-current power supply signals are equal in value and are 15V, and the connecting branches are different.
The second power supply respectively provides direct-current power supply signals UH _5V, UL _5V, VH _5V, VL _5V, WH _5V, WL _5V to the reference voltage module 2 in the six-way IGBT over-temperature protection circuit, the six direct-current power supply signals are provided by six secondary side outputs of the same customized second power supply of other models after voltage stabilization, the six secondary side outputs are equal in numerical value and are 5V, and the connecting branches are different.
Referring to fig. 5, the driving chip provides turn-on signals U _ GH, U _ GL, V _ GH, V _ GL, W _ GH, and W _ GL to the over-temperature protection switch control module 4 in the six IGBT over-temperature protection circuits, respectively.
Referring to fig. 3, in order to distinguish the IGBT over-temperature protection circuits corresponding to the upper arm and the lower arm of the motor controller U, V, W, a comparator U, a first current limiting resistor R, a second current limiting resistor RFj, a first voltage dividing resistor RFi, a triode Q, and a thermistor RT in each IGBT over-temperature protection circuit are labeled differently for easy understanding; wherein, 6 thermistors RT are set as a first thermistor RT1, a second thermistor RT2, a third thermistor RT3, a fourth thermistor RT4, a fifth thermistor RT5 and a sixth thermistor RT 6; setting 6 first current limiting resistors R as a first sub current limiting resistor R1, a second sub current limiting resistor R2, a third sub current limiting resistor R3, a fourth sub current limiting resistor R4, a fifth sub current limiting resistor R5 and a sixth sub current limiting resistor R6; the 6 comparators are set to a first comparator U1, a second comparator U2, a third comparator U3, a fourth comparator U4, a fifth comparator U5 and a sixth comparator U6; the 6 second current limiting resistors RFj are set as a seventh sub current limiting resistor RF1, an eighth sub current limiting resistor RF4, a ninth sub current limiting resistor RF5, a tenth sub current limiting resistor RF7, an eleventh sub current limiting resistor RF9 and a twelfth sub current limiting resistor RF 11; the 6 first voltage-dividing resistors RFi are set as a first sub voltage-dividing resistor RF2, a second sub voltage-dividing resistor RF3, a third sub voltage-dividing resistor RF6, a fourth sub voltage-dividing resistor RF8, a fifth sub voltage-dividing resistor RF10 and a sixth sub voltage-dividing resistor RF 12; the 6 triodes Q are provided as a first triode Q1, a second triode Q2, a third triode Q3, a fourth triode Q4, a fifth triode Q5, and a sixth triode Q6.
According to a table look-up, the resistance value corresponding to the temperature of 105 ℃ is 0.588K omega, the input voltage range of the comparator is known to be 2V-36V according to an LM393 handbook, and the voltages at two ends of the thermistors RT1, RT2, RT3, RT4, RT5 and RT6 corresponding to the overtemperature threshold value of 105 ℃ are all set to be 3V under the condition that the direct current power supply condition with the numerical value of 15V and 5V is considered, so that the resistance values 2.352K omega of the current limiting resistors R1, R2, R3, R4, R5 and R6 of the same model can be obtained.
For a U-phase upper bridge IGBT temperature acquisition circuit, VCCH _ U provides 15V voltage, the voltage is limited through a resistor R1, the current is limited through a thermistor RT1 and then is connected with GND1, when the corresponding resistance value of the thermistor at-40 ℃ is 336.6K omega, the IGBT temperature voltage Vtemp1 acquired from the two ends of T1 and T2 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp1 of the IGBT collected from the two ends of T1 and T2 is 3V. For a U-phase lower bridge IGBT temperature acquisition circuit, VCCL _ U provides 15V voltage, the voltage is limited through a resistor R2, the current is limited through a thermistor RT2 and then is connected with GND1, when the corresponding resistance value of the thermistor at-40 ℃ is 336.6K omega, the IGBT temperature voltage Vtemp2 acquired from the two ends of T3 and T4 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp2 of the IGBT collected from the two ends of T3 and T4 is 3V. For the V-phase upper bridge IGBT temperature acquisition circuit, VCCH _ V provides 15V voltage, the voltage is limited through a resistor R3, the current is limited through a thermistor RT3 and then is connected with GND1, when the corresponding resistance value of the thermistor at-40 ℃ is 336.6K omega, the IGBT temperature voltage Vtemp3 acquired from the two ends of T5 and T6 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp3 of the IGBT collected from the two ends of T5 and T6 is 3V. For a V-phase lower bridge IGBT temperature acquisition circuit, VCCL _ V provides 15V voltage, the voltage is limited through a resistor R4, the current is limited through a thermistor RT4 and then is connected with GND1, when the corresponding resistance value of the thermistor at-40 ℃ is 336.6K omega, the IGBT temperature voltage Vtemp4 acquired from the two ends of T7 and T8 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp4 of the IGBT collected from the two ends of T7 and T8 is 3V. For the W-phase upper bridge IGBT temperature acquisition circuit, VCCH _ W provides 15V voltage, the voltage is limited through R5 resistor, and is connected with GND1 after passing through thermistor RT5, when the corresponding resistance value of the thermistor is 336.6K omega at the temperature of minus 40 ℃, the IGBT temperature voltage Vtemp5 acquired from the two ends of T9 and T10 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp5 of the IGBT collected from the two ends of T9 and T10 is 3V. For the W-phase lower bridge IGBT temperature acquisition circuit, VCCL _ W provides 15V voltage, the voltage is limited through a resistor R6, the current is limited through a thermistor RT6 and then is connected with GND1, when the corresponding resistance value of the thermistor at-40 ℃ is 336.6K omega, the IGBT temperature voltage Vtemp6 acquired from the two ends of T11 and T12 is 14.896V; when the temperature of the thermistor is 105 ℃, the temperature voltage Vtemp6 of the IGBT collected from the two ends of T11 and T12 is 3V.
The motor controller comprises an U, V, W three-phase six-stage reference voltage circuit of an upper bridge arm and a lower bridge arm, and the reference voltage setting value corresponds to a temperature protection threshold value, so that the six-stage reference voltage values of Vref1, Vref2, Vref3, Vref4, Vref5 and Vref6 are all set to be 3V. The dc power supply signal UH _5V, UL _5V, VH _5V, VL _5V, WH _5V, WL _5V is 5V, and considering that the reference voltage should be accurate and reliable, a resistor with 0.1% accuracy is selected by KOA manufacturers. According to the voltage division ratio calculation, 6 current limiting resistors RF1, RF3, RF5, RF7, RF9 and RF11 are set as AT0603BRD0720KL resistors with the same model and the resistance values of 20K omega, and 6 voltage dividing resistors RF2, RF4, RF6, RF8, RF10 and RF12 are set as AT0603BRD0730KL resistors with the same model and the resistance values of 30K omega.
The motor controller comprises an U, V, W three-phase six-phase reference voltage circuit of an upper bridge arm and a lower bridge arm, the three-phase six-phase reference voltage circuit is respectively composed of 6 comparators U3, U4, U5, U6 and U7 of the same model LM393, power supply of the 6 LM393 comparators is respectively provided by a nearest direct current power supply signal UH _5V, UL _5V, VH _5V, VL _5V, WH _5V, WL _5V, and cathodes of the comparators are connected with GND 2. The non-inverting input ends of the 6 LM393 comparators are respectively connected with six temperature acquisition voltage signals Vtemp1, Vtemp2, Vtemp3, Vtemp4, Vtemp5 and Vtemp6 of the IGBT; the inverting inputs of the 6 LM393 comparators are connected to the reference voltage signal inputs Vref1, Vref2, Vref3, Vref4, Vref5, and Vref6, respectively. According to the characteristics of the thermistor, when the temperature of six paths of IGBT is-40-105 ℃, the output voltage of six temperature acquisition voltage signals Vtemp1, Vtemp2, Vtemp3, Vtemp4, Vtemp5 and Vtemp6 is 14.896-3V, and changes along with the temperature increase in a linear decreasing trend. Therefore, when the temperature of the IGBT is less than 105 ℃, the voltages Vtemp1, Vtemp2, Vtemp3, Vtemp4, Vtemp5 and Vtemp6 of the non-inverting input ends of the 6 LM393 comparators are always greater than the voltages Vref1, Vref2, Vref3, Vref4, Vref5 and Vref6 of the inverting input ends, and the outputs of the 6 comparators are all at high level; when the temperature of the IGBT is higher than 105 ℃, the voltages Vtemp1, Vtemp2, Vtemp3, Vtemp4, Vtemp5 and Vtemp6 of the non-inverting input ends of 6 LM393 comparators are always smaller than the voltages Vref1, Vref2, Vref3, Vref4, Vref5 and Vref6 of the corresponding inverting input ends, and the outputs of the 6 comparators are all at low level.
The motor controller comprises an U, V, W three-phase six-way switching control circuit of an upper bridge arm and a lower bridge arm, and the six-way switching control circuit consists of 6 NPN type triodes Q1, Q2, Q3, Q4, Q5 and Q6 which are of the same model number 2N 3904. The positive electrode of the high-voltage bus is connected with U, V, W collectors C1, C2, C3, C4, C5 and C6 of the three-phase upper and lower arm IGBTs, the negative electrode of the high-voltage bus is connected with U, V, W emitters E1, E2, E3, E4, E5 and E6 of the three-phase upper and lower arm IGBTs, and switches of the IGBTs are controlled by gate signals G1, G2, G3, G4, G5 and G6 respectively.
For the U-phase upper bridge switch control circuit, a PWM chip provides a gate turn-on voltage U _ GH signal to be connected with a collector electrode of a triode Q1, an emitting electrode of a triode Q1 is connected with a gate G1 of an IGBT, and a base electrode of a triode Q1 is connected with the output of an LM393 comparator U2. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U2 outputs high level, the triode Q1 is conducted, and a gate opening signal U _ GH of the PWM chip is transmitted to the gate G1 of the IGBT through the triode Q1 to open the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U2 outputs low level, the triode Q1 is turned off, and the gate opening signal U _ GH of the PWM chip cannot be transmitted to the gate G1 of the IGBT through the triode Q1, so that the IGBT is turned off, and the over-temperature protection function of the U-phase upper bridge IGBT is realized.
For the U-phase lower bridge switch control circuit, the PWM chip provides a gate turn-on voltage U _ GL signal to be connected with the collector of a triode Q2, the emitter of the triode Q2 is connected with the gate G2 of the IGBT, and the base of the triode Q2 is connected with the output of an LM393 comparator U3. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U3 outputs high level, the triode Q2 is conducted, and a gate opening signal U _ GL of the PWM chip is transmitted to the gate G2 of the IGBT through the triode Q2 to open the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U3 outputs low level, the triode Q2 is turned off, and the gate opening signal U _ GL of the PWM chip cannot be transmitted to the gate G2 of the IGBT through the triode Q2, so that the IGBT is turned off, and the over-temperature protection function of the U-phase lower bridge IGBT is realized.
For the V-phase upper bridge switch control circuit, a PWM chip (driving chip) provides a gate opening voltage V _ GH signal to be connected with a collector electrode of a triode Q3, an emitting electrode of a triode Q3 is connected with a gate electrode G3 of an IGBT, and a base electrode of a triode Q3 is connected with the output of an LM393 comparator U4. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U4 outputs high level, the triode Q3 is conducted, and a gate opening signal V _ GH of the PWM chip is transmitted to the gate G3 of the IGBT through the triode Q3 to open the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U4 outputs low level, the triode Q3 is turned off, and the gate opening signal V _ GH of the PWM chip cannot be transmitted to the gate G3 of the IGBT through the triode Q3, so that the IGBT is turned off, and the over-temperature protection function of the V-phase upper bridge IGBT is realized.
For the V-phase lower bridge switch control circuit, the PWM chip provides a gate turn-on voltage V _ GL signal to be connected with the collector of a triode Q4, the emitter of the triode Q4 is connected with the gate G4 of the IGBT, and the base of the triode Q4 is connected with the output of an LM393 comparator U5. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U5 outputs high level, the triode Q4 is conducted, and a gate opening signal V _ GL of the PWM chip is transmitted to a gate G4 of the IGBT through the triode Q4 to open the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U5 outputs low level, the triode Q4 is turned off, and the gate opening signal V _ GL of the PWM chip cannot be transmitted to the gate G4 of the IGBT through the triode Q4, so that the IGBT is turned off, and the over-temperature protection function of the V-phase lower bridge IGBT is realized. For the W-phase upper bridge switch control circuit, a PWM chip provides a gate turn-on voltage W _ GH signal which is connected with a collector electrode of a triode Q5, an emitter electrode of a triode Q5 is connected with a gate electrode G5 of an IGBT, and a base electrode of a triode Q5 is connected with the output of an LM393 comparator U6. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U6 outputs high level, the triode Q5 is conducted, and a gate opening signal W _ GH of the PWM chip is transmitted to the gate G5 of the IGBT through the triode Q5 to open the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U6 outputs low level, the triode Q5 is turned off, and the gate opening signal W _ GH of the PWM chip cannot be transmitted to the gate G5 of the IGBT through the triode Q5, so that the IGBT is turned off, and the over-temperature protection function of the W-phase upper bridge IGBT is realized.
For the W-phase lower bridge switch control circuit, a PWM chip provides a gate turn-on voltage W _ GL signal to be connected with a collector electrode of a triode Q6, an emitting electrode of a triode Q6 is connected with a gate electrode G6 of an IGBT, and a base electrode of a triode Q6 is connected with the output of an LM393 comparator U7. When the temperature of the IGBT is less than or equal to 105 ℃, the comparator U7 outputs high level, the triode Q6 is conducted, and a gate opening signal W _ GL of the PWM chip is transmitted to a gate G6 of the IGBT through the triode Q6 to turn on the IGBT; when the temperature of the IGBT is higher than 105 ℃, the comparator U7 outputs low level, the triode Q6 is turned off, and the gate opening signal W _ GL of the PWM chip cannot be transmitted to the gate G6 of the IGBT through the triode Q6, so that the IGBT is turned off, and the over-temperature protection function of the W-phase lower bridge IGBT is realized.
In addition, the above is an ideal scheme proposed by the scheme, and the temperatures of the six-way IGBTs are not balanced in actual engineering practice, so a supplementary case applied to the actual engineering practice is proposed based on the scheme. In the actual operation process of the motor controller, a thermal imager is used for respectively measuring U, V, W three-phase upper and lower bridge arm six-way IGBT actual temperature rise data, and the following engineering practical experience is obtained by combining a water channel heat dissipation design: the temperature of the U-phase lower bridge arm or the W-phase lower bridge arm positioned at the water inlet and the water outlet is 5-8 ℃ higher than that of the other four bridge arms due to the fact that the swirling of the cooling liquid is easy to form dead water, and therefore the over-temperature threshold value of the two bridge arms is set to be higher than that of the other four bridge arms aiming at the Sda GD950HTX75P6HB, in addition, the time for the temperature of the IGBT to rise from 110 ℃ to 125 ℃ under the maximum torque working condition is only 15-30 seconds through a bench test experiment, the over-temperature threshold value is set to be too high and easily exceeds 125 ℃ quickly to cause module damage, the two factors are comprehensively considered, the over-temperature threshold value of the U-phase lower bridge or the W-phase lower bridge is often reasonably increased from 105 ℃ to 110 ℃ in the project engineering practice application, and the other four bridge arms keep 105 ℃ unchanged. Because the six IGBT over-temperature protection design circuits are independently separated, the six IGBT over-temperature protection design circuit has the great advantage that protection can be realized by triggering the switches Q2 and Q6 to output low-level turn-off IGBT transmission paths at 110 ℃ by adjusting the resistance values of R2, RF3 and RF4 of a U-phase lower bridge or R6, RF11 and RF12 of a W-phase lower bridge according to engineering practice experience. Similarly, engineers can adjust the over-temperature protection threshold values of other four paths of IGBTs arbitrarily according to actual engineering practice requirements, so that great convenience is brought to the engineering practice requirements.
Referring to fig. 4, the present embodiment further discloses an IGBT over-temperature protection method, which utilizes the above-mentioned motor controller, and includes the steps of:
the temperature acquisition module 1 in each IGBT over-temperature protection circuit acquires the temperature of the corresponding IGBT and transmits the temperature to the voltage comparison module 3;
the voltage comparison module 3 judges whether the temperature of the IGBT is greater than a preset temperature threshold value or not;
if yes, the voltage comparison module 3 outputs a low level to the over-temperature protection switch control module 4, the over-temperature protection switch control module 4 is turned off, and the input of a turn-on signal to the IGBT is stopped, so that the IGBT is turned off;
otherwise, the voltage comparison module 3 outputs a high level to the over-temperature protection switch control module 4, the over-temperature protection switch control module 4 is turned on, and a turn-on signal is input to the IGBT to turn on the IGBT.
In the present embodiment, the preset temperature threshold is 105 ℃. In order to acquire the NTC temperature more accurately, the environmental application range of the Sda GD950HTX75P6HB module is-40-140 ℃ according to technical communication with a Sda engineer, and the thermistor NTC is embedded in the module and is close to the position of the copper substrate, so that the obtained temperature can approach the actual temperature of the binding line as much as possible. Meanwhile, in combination with practical experience of other projects, in order to use the output capacity of the IGBT to the maximum extent and reduce the risk of thermal damage of the IGBT, the over-temperature protection threshold is preferably set to be 105 ℃, so that the over-temperature thresholds of six paths of three-phase upper bridge arms and three-phase lower bridge arms of the motor controller U, V, W are all set to be 105 ℃.
The embodiment also discloses a vehicle which comprises the motor controller.
According to the IGBT over-temperature protection circuit and the method thereof, the motor controller and the vehicle, the over-temperature signal is not required to be transmitted back to the driving chip (MCU) for judgment and control, the PWM wave path from the rear end of the driving chip to the IGBT is directly cut off, the switching-off can be realized, the speed is higher, the efficiency is higher, the MCU program disorder error can be avoided, the protection cannot be realized, and the reliability is higher; the over-temperature protection can be carried out on each IGBT, the reliability is improved, and particularly, the over-temperature protection circuit is designed on the six bridge arms, so that the condition that one bridge arm cannot be protected when not detected is avoided.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (10)

1. The IGBT over-temperature protection circuit is characterized by comprising a temperature acquisition module (1), a reference voltage module (2), a voltage comparison module (3) and an over-temperature protection switch control module (4), wherein the temperature acquisition module (1), the reference voltage module (2) and the over-temperature protection switch control module (4) are respectively connected with the voltage comparison module (3), and the input end and the output end of a switching-on signal of the over-temperature protection switch control module (4) are respectively used for being connected with a driving chip and the base electrode of an IGBT; the direct-current power supply end of the temperature acquisition module (1) is used for being connected with a first power supply, and the direct-current power supply end of the reference voltage module (2) is used for being connected with a second power supply;
when the temperature of the IGBT is detected to be larger than a preset temperature threshold value, the voltage comparison module (3) outputs a low level to the over-temperature protection switch control module (4), the over-temperature protection switch control module (4) is turned off, and the turn-on signal is stopped being input to the IGBT, so that the IGBT is turned off;
when the temperature of the IGBT is detected to be less than or equal to a preset temperature threshold value, the voltage comparison module (3) outputs a high level to the over-temperature protection switch control module (4), the over-temperature protection switch control module (4) is conducted, and a turn-on signal is input to the IGBT to enable the IGBT to be conducted.
2. The IGBT over-temperature protection circuit according to claim 1, characterized in that the temperature acquisition module (1) comprises a thermistor (RT) and a first current limiting resistor (R); the voltage comparison module (3) comprises a comparator (U); one end of the thermistor (RT) is grounded, and the other end of the thermistor (RT) is connected with the non-inverting input end of the comparator (U); one end of the first current limiting resistor (R) is used for being connected with a first power supply, and the other end of the first current limiting resistor (R) is connected with the non-inverting input end of the comparator (U).
3. IGBT over-temperature protection circuit according to claim 1, characterized in that the reference voltage module (2) comprises a second current limiting resistor (RFj) and a first voltage dividing Resistor (RFi), one end of the second current limiting resistor (RFj) is used for being connected with a second power supply, the other end of the second current limiting resistor (RFj) is connected with one end of the first voltage dividing Resistor (RFi), the other end of the first divider Resistor (RFi) is grounded, a connecting node between the second current limiting resistor (RFj) and the first divider Resistor (RFi) is connected with the inverting input end of the comparator (U), the positive power end of the comparator (U) is connected with one end of the second current limiting resistor (RFj) far away from the first voltage dividing Resistor (RFi), the negative power supply end of the comparator (U) is grounded, and the signal output end of the comparator (U) is connected with the over-temperature protection switch control module (4).
4. The IGBT over-temperature protection circuit according to claim 1, wherein the over-temperature protection switch control module (4) comprises a triode (Q), a base of the triode (Q) is connected with a signal output terminal of the comparator (U), a collector of the triode (Q) is a modulation signal input terminal for connecting with the driving chip, and an emitter of the triode (Q) is a modulation signal output terminal for connecting with the base of the IGBT.
5. A motor controller, characterized by comprising at least one IGBT, wherein each IGBT is correspondingly provided with the IGBT over-temperature protection circuit as claimed in claims 1 to 4.
6. The motor controller of claim 5 wherein the number of IGBTs is six.
7. A motor controller according to claim 5 or 6, characterised in that the IGBT is of the type Sdad GD950HTX75P6 HB.
8. An IGBT over-temperature protection method, characterized in that, by using the motor controller as claimed in claims 5 to 7, the steps include:
the temperature acquisition module (1) in each IGBT over-temperature protection circuit acquires the temperature of the corresponding IGBT and transmits the temperature to the voltage comparison module (3);
the voltage comparison module (3) judges whether the temperature of the IGBT is greater than a preset temperature threshold value or not;
if yes, the voltage comparison module (3) outputs a low level to the over-temperature protection switch control module (4), the over-temperature protection switch control module (4) is turned off, and the turn-on signal is stopped being input to the IGBT, so that the IGBT is turned off;
otherwise, the voltage comparison module (3) outputs a high level to the over-temperature protection switch control module (4), the over-temperature protection switch control module (4) is conducted, and a turn-on signal is input to the IGBT to enable the IGBT to be conducted.
9. The IGBT over-temperature protection method according to claim 8, wherein the preset temperature threshold is 105 ℃.
10. A vehicle comprising a motor controller according to any one of claims 5 to 7.
CN202210182985.9A 2022-02-25 2022-02-25 IGBT over-temperature protection circuit and method thereof, motor controller and vehicle Pending CN114465202A (en)

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CN201690229U (en) * 2010-05-06 2010-12-29 厦门科华恒盛股份有限公司 Protecting device capable of improving application reliability of Insulated Gate Bipolar Translator (IGBT)
CN202772558U (en) * 2012-09-20 2013-03-06 厦门翰普电子有限公司 Excess temperature protection structure of microwave power device
CN204118708U (en) * 2014-09-26 2015-01-21 百固电气有限公司 The thermal-shutdown circuit of a kind of IGBT and Active Power Filter-APF
CN104713661A (en) * 2013-12-11 2015-06-17 株式会社电装 Apparatus for detecting temperature of semiconductor elements for power conversion
CN107026051A (en) * 2016-02-02 2017-08-08 Ls 产电株式会社 Magnetic coil drive circuit for magnetic contactor
CN109643993A (en) * 2016-09-01 2019-04-16 日立汽车***株式会社 Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201690229U (en) * 2010-05-06 2010-12-29 厦门科华恒盛股份有限公司 Protecting device capable of improving application reliability of Insulated Gate Bipolar Translator (IGBT)
CN202772558U (en) * 2012-09-20 2013-03-06 厦门翰普电子有限公司 Excess temperature protection structure of microwave power device
CN104713661A (en) * 2013-12-11 2015-06-17 株式会社电装 Apparatus for detecting temperature of semiconductor elements for power conversion
CN204118708U (en) * 2014-09-26 2015-01-21 百固电气有限公司 The thermal-shutdown circuit of a kind of IGBT and Active Power Filter-APF
CN107026051A (en) * 2016-02-02 2017-08-08 Ls 产电株式会社 Magnetic coil drive circuit for magnetic contactor
CN109643993A (en) * 2016-09-01 2019-04-16 日立汽车***株式会社 Semiconductor device

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Application publication date: 20220510