CN114455539A - Method for debonding temporary bonded slide structure - Google Patents

Method for debonding temporary bonded slide structure Download PDF

Info

Publication number
CN114455539A
CN114455539A CN202111628989.7A CN202111628989A CN114455539A CN 114455539 A CN114455539 A CN 114455539A CN 202111628989 A CN202111628989 A CN 202111628989A CN 114455539 A CN114455539 A CN 114455539A
Authority
CN
China
Prior art keywords
debonding
slide glass
slide
solution
magnetic stirrer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111628989.7A
Other languages
Chinese (zh)
Inventor
齐步祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Xijing Micro Electromechanical Technology Co ltd
Original Assignee
Suzhou Xijing Micro Electromechanical Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Xijing Micro Electromechanical Technology Co ltd filed Critical Suzhou Xijing Micro Electromechanical Technology Co ltd
Priority to CN202111628989.7A priority Critical patent/CN114455539A/en
Publication of CN114455539A publication Critical patent/CN114455539A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865Multistep processes for the separation of wafers into individual elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The invention discloses a method for debonding a temporary bonded slide structure, which comprises the following steps: forming a through hole in a preset area of a wafer of a slide glass structure; the slide glass structure is placed on the supporting piece in an inverted mode, so that a contact area between the supporting piece and the slide glass structure is located in the through hole, and the contact area is smaller than the area of the through hole; and soaking the slide glass structure and the support piece in the debonding solution, and stirring the debonding solution to dissolve the temporary bonding glue between the wafer of the slide glass structure and the slide glass. The invention improves the bonding-releasing speed of the temporary bonded slide structure.

Description

Method for debonding temporary bonded slide structure
Technical Field
The invention relates to the technical field of micro-nano processing, in particular to a method for debonding a slide glass structure through temporary bonding.
Background
With the development of the micro-nano processing technology field, the integration level and performance of various devices are also higher and higher, so in order to meet the miniaturization requirement of the devices, the integration level of the chip or the corresponding electronic device can be improved by stacking the wafer and the wafer or the chip and the wafer layer by layer. Generally, a device needs to be thinned, but an ultrathin wafer has the characteristics of flexibility, fragility, easiness in warping and fluctuation and the like, so that subsequent process operation is inconvenient, a device wafer needs to be bonded onto a thicker carrier glass by using a temporary bonding material, the thin wafer is supported and transferred by using the carrier glass, meanwhile, the thin wafer can be prevented from being deformed, and the carrier glass is separated from the thin wafer after the back process of the wafer is completed.
The existing bonding removal method is that a whole wafer which is bonded is directly placed in chemical medicine for soaking, because the slide glass is tightly bonded with the wafer, chemical medicine solution is difficult to permeate into the wafer, the bonding removal time is long, and the surface of the wafer which is bonded is difficult to clean due to the fact that bonding glue solid residues are usually arranged on the surface of the wafer. The current process is not suitable for some fragile and cantilever beam type ultrathin devices in the chemical soaking process, and particularly for optical devices with high cleanliness requirements, a lot of good products are lost in the step, so that the yield is reduced.
Disclosure of Invention
In view of the defects in the prior art, the invention provides a method for debonding a temporarily bonded slide structure, which comprises the following steps:
forming a through hole in a preset area of a wafer of the slide glass structure;
the slide glass structure is placed on a support piece in an inverted mode, so that a contact area between the support piece and the slide glass structure is located in the through hole, and the contact area is smaller than the area of the through hole;
and soaking the slide glass structure and the support piece in a bonding solution, stirring the bonding solution, and dissolving the temporary bonding glue between the wafer and the slide glass of the slide glass structure.
Preferably, the method of immersing the slide structure and the support in a debonding solution and agitating the debonding solution comprises:
placing a magnetic stirrer in the stirring cylinder;
covering the magnetic stirrer by using a first cleaning flower basket;
placing the slide structure and the support member on the first cleaning basket;
covering the slide structure and the support member with a second cleaning basket;
pouring the bonding solution into the stirring cylinder to soak the slide glass structure and the support piece in the bonding solution;
and placing the stirring cylinder on a magnetic stirrer, and providing a rotary driving force for the magnetic stirrer through the magnetic stirrer.
Preferably, the support member includes a support plate and a positioning column disposed on the support plate, and a radial cross-sectional area of the positioning column is smaller than an area of the through hole.
Preferably, the carrier sheet is one of a silicon substrate, a glass substrate, and an SOI substrate.
Preferably, the temperature of the debonding solution is greater than 50 ℃.
Preferably, the rotation rate of the magnetic stirrer is greater than 80 rad/s.
Preferably, the first and second cleaning baskets are made of polytetrafluoroethylene.
Preferably, the stirring cylinder is made of quartz.
Compared with the prior art, the method for debonding the temporary bonding slide glass structure provided by the invention has the advantages that the through holes are formed in the preset area of the wafer of the slide glass structure, so that the contact area between the bonding glue and the debonding solution is increased, the debonding solution can easily infiltrate the bonding glue, and the speed of dissolving the bonding glue is increased. In the process of bonding release, the supporting piece passes through the through hole on the wafer to manufacture the whole slide glass structure, so that the wafer and the slide glass are separated and then fall on the supporting piece, and the slide glass is continuously supported by the supporting piece, thereby accelerating the dissolving speed of the residual bonding glue.
In addition, the dissolution speed of the bonding glue is increased by stirring the bonding solution, and meanwhile, the bonding glue particles are prevented from being deposited on the surface of the wafer by the flowing of the bonding solution, so that the cleanliness of the surface of the wafer is improved, and the follow-up process is facilitated.
Drawings
FIG. 1 is a flow chart of a method of debonding a temporarily bonded slide structure according to an embodiment of the present invention;
fig. 2 is an operational schematic diagram of a method of debonding a temporarily bonded slide structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
In view of the problems in the prior art in the background art, the present embodiment provides the following specific solutions.
As shown in fig. 1, the present embodiment provides a method for debonding a temporarily bonded slide structure, the debonding method including:
step S1, forming through holes in the predetermined regions of the wafer of the slide structure.
Step S2, the slide glass structure is placed on a support piece in an inverted mode, so that a contact area between the support piece and the slide glass structure is located in the through hole, and the contact area is smaller than the area of the through hole.
Step S3, soaking the slide glass structure and the supporting piece in a debonding solution, stirring the debonding solution, and dissolving the temporary bonding glue between the wafer and the slide glass of the slide glass structure.
Compared with the prior art, the method for debonding the temporary bonded slide glass structure in the embodiment forms the through hole in the preset area of the wafer of the slide glass structure, so as to increase the contact area between the bonding glue and the debonding solution, so that the debonding solution can easily infiltrate the bonding glue, and the speed of dissolving the bonding glue is increased. In the process of bonding release, the supporting piece passes through the through hole on the wafer to manufacture the whole slide glass structure, so that the wafer and the slide glass are separated and then fall on the supporting piece, and the slide glass is continuously supported by the supporting piece, thereby accelerating the dissolving speed of the residual bonding glue. Moreover, the dissolution rate of the bonding glue is increased by stirring the bonding solution, and meanwhile, the bonding glue particles are prevented from being deposited on the surface of the wafer by the flowing of the bonding solution, so that the cleanliness of the surface of the wafer is improved, and the subsequent process is facilitated.
Preferably, referring to fig. 2, in this embodiment, the method of immersing the slide structure a and the support member B in the debonding solution and stirring the debonding solution includes:
step S31, placing a magnetic stirrer 2 in the stirring cylinder 1; wherein the stirring cylinder 1 is made of quartz.
Step S32, covering the magnetic stirrer 2 with a first cleaning flower basket 3 (not shown in the figures) to cover the through holes; wherein the first cleaning flower basket 3 is made of polytetrafluoroethylene.
Step S33, placing the slide structure a and the support member B on the first cleaning flower basket 3.
Step S34, covering the slide structure a and the support member B with a second cleaning flower basket 4 (not shown in the figures with a plurality of through holes); wherein the second cleaning flower basket 4 is made of polytetrafluoroethylene.
Step S35, pouring the debonding solution (not shown in the figure) into the stirring cylinder 1, so that the slide structure a and the support B are immersed in the debonding solution; wherein the temperature of the debonding solution is greater than 50 ℃.
Step S36, placing the stirring cylinder 1 on a magnetic stirrer (not shown in the figure), and providing a rotational driving force to the magnetic stirrer 2 through the magnetic stirrer; wherein the rotation speed of the magnetic stirrer 2 is more than 80 rad/s.
Specifically, the support member B of the present embodiment includes a support plate B1 and a positioning post B2 disposed on the support plate B1. When the slide glass structure A is inverted on the support B, the positioning column B2 is positioned in the through hole a of the wafer A1. The radial cross-sectional area of the positioning column B2 is smaller than the area of the through hole a. The slide sheet A2 of the slide sheet structure A is preferably one of a silicon substrate, a glass substrate and an SOI substrate.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. A method of debonding a temporarily bonded slide structure, the debonding method comprising:
forming a through hole in a preset area of a wafer of the slide glass structure;
the slide glass structure is placed on a support piece in an inverted mode, so that a contact area between the support piece and the slide glass structure is located in the through hole, and the contact area is smaller than the area of the through hole;
and soaking the slide glass structure and the support piece in a bonding solution, stirring the bonding solution, and dissolving the temporary bonding glue between the wafer and the slide glass of the slide glass structure.
2. The debonding method of claim 1, wherein immersing the slide structure and the support in a debonding solution and agitating the debonding solution comprises:
placing a magnetic stirrer in the stirring cylinder;
covering the magnetic stirrer by using a first cleaning flower basket;
placing the slide structure and the support member on the first cleaning basket;
covering the slide structure and the support member with a second cleaning basket;
pouring the bonding solution into the stirring cylinder to soak the slide glass structure and the support piece in the bonding solution;
and placing the stirring cylinder on a magnetic stirrer, and providing a rotary driving force for the magnetic stirrer through the magnetic stirrer.
3. The method of claim 1 or 2, wherein the support comprises a support plate and positioning posts disposed on the support plate, the positioning posts having a radial cross-sectional area smaller than an area of the through holes.
4. The debonding method of claim 3, wherein the carrier sheet is one of a silicon substrate, a glass substrate, and an SOI substrate.
5. The debonding method of claim 4, wherein the temperature of the debonding solution is greater than 50 ℃.
6. The method of claim 2, wherein the rotation rate of the magnetic stirrer is greater than 80 rad/s.
7. The method of debonding according to claim 6, wherein the first cleaning basket and the second cleaning basket are made of polytetrafluoroethylene.
8. The method of claim 7, wherein the stir cylinder is made of quartz.
CN202111628989.7A 2021-12-28 2021-12-28 Method for debonding temporary bonded slide structure Pending CN114455539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111628989.7A CN114455539A (en) 2021-12-28 2021-12-28 Method for debonding temporary bonded slide structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111628989.7A CN114455539A (en) 2021-12-28 2021-12-28 Method for debonding temporary bonded slide structure

Publications (1)

Publication Number Publication Date
CN114455539A true CN114455539A (en) 2022-05-10

Family

ID=81407643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111628989.7A Pending CN114455539A (en) 2021-12-28 2021-12-28 Method for debonding temporary bonded slide structure

Country Status (1)

Country Link
CN (1) CN114455539A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104064509A (en) * 2014-07-09 2014-09-24 浙江中纳晶微电子科技有限公司 Temporary bonding method and separation method of wafers
US20150283798A1 (en) * 2014-04-03 2015-10-08 International Business Machines Corporation Methods for operating a debonder
CN105552017A (en) * 2015-12-28 2016-05-04 深圳先进技术研究院 Slide structure used for temporary bonding, and bonding and de-bonding method
CN106847718A (en) * 2017-03-28 2017-06-13 深圳市化讯半导体材料有限公司 A kind of interim bonding of device wafers with tear bonding technology open
CN111244015A (en) * 2020-01-20 2020-06-05 杭州立昂东芯微电子有限公司 Wafer de-bonding auxiliary carrying disc, de-bonding machine and de-bonding method
CN112289734A (en) * 2020-11-25 2021-01-29 绍兴同芯成集成电路有限公司 Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150283798A1 (en) * 2014-04-03 2015-10-08 International Business Machines Corporation Methods for operating a debonder
CN104064509A (en) * 2014-07-09 2014-09-24 浙江中纳晶微电子科技有限公司 Temporary bonding method and separation method of wafers
CN105552017A (en) * 2015-12-28 2016-05-04 深圳先进技术研究院 Slide structure used for temporary bonding, and bonding and de-bonding method
CN106847718A (en) * 2017-03-28 2017-06-13 深圳市化讯半导体材料有限公司 A kind of interim bonding of device wafers with tear bonding technology open
CN111244015A (en) * 2020-01-20 2020-06-05 杭州立昂东芯微电子有限公司 Wafer de-bonding auxiliary carrying disc, de-bonding machine and de-bonding method
CN112289734A (en) * 2020-11-25 2021-01-29 绍兴同芯成集成电路有限公司 Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer

Similar Documents

Publication Publication Date Title
US7211168B2 (en) Substrate supporting plate and stripping method for supporting plate
US8871609B2 (en) Thin wafer handling structure and method
US6337027B1 (en) Microelectromechanical device manufacturing process
JP2008521214A (en) Thinner semiconductor wafers
JP5271554B2 (en) Support plate
US6076585A (en) Method of manufacturing a semiconductor device and apparatus therefor
TW200525707A (en) Semiconductor device and method of manufacturing the same
JP2001102330A (en) Method for manufacturing substrate
CN114455539A (en) Method for debonding temporary bonded slide structure
KR100919964B1 (en) Color image sensor on transparent substrate and method for making same
JP2001267204A (en) Method and device for treating substrate
US20050028842A1 (en) Method of cleaning a substrate and an apparatus thereof
US9929025B2 (en) Cassette fixture for holding film frames with affixed thin substrates during liquid chemical batch removal of carriers
JPH06275717A (en) Wafer peeling method
JPS63117445A (en) Processing of semiconductor wafer
JP3912350B2 (en) Manufacturing method of semiconductor device
JP3798760B2 (en) Method for forming semiconductor wafer
JPH10270387A (en) Manufacture of semiconductor device
TW544739B (en) Method of thinning wafer
JP2002103300A (en) Micro-machine manufacturing method
JP4706086B2 (en) Cleaning method for cover glass with spacer
JP2830633B2 (en) Method for manufacturing semiconductor device
RU2004123082A (en) METHOD FOR PRODUCING COMPOSITE MEMBRANES BASED ON THIN METAL FILMS
TW202233323A (en) Semiconductor manufacturing process and method for processing a semiconductor wafer
JP2891816B2 (en) Semiconductor element peeling cleaning jig

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination