CN114420812A - Deep ultraviolet semiconductor light-emitting element - Google Patents
Deep ultraviolet semiconductor light-emitting element Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 230000000903 blocking effect Effects 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000969 carrier Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910016420 Ala Inb Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 abstract description 11
- 230000001105 regulatory effect Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 230000006798 recombination Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a deep ultraviolet semiconductor light-emitting element which sequentially comprises a substrate, a buffer layer, a first conductive type semiconductor, a multi-quantum well, a conductive type electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the H concentration of the conductive type electron blocking layer is 1E 17-5E 18cm‑3O concentration is 1E 17-1E 18cm‑3By controlling the H/O content of the conductive electron blocking layer, the Al suitable for the high Al component is regulated and controlledyGa1‑yThe H/O content and proportion of the N material can effectively reduce the hole ionization energy of the Mg layer, improve the hole ionization efficiency, and improve the concentration of free hole carriers to 1E18cm‑3The above.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a deep ultraviolet semiconductor light-emitting element.
Background
The semiconductor light-emitting element has a wide wavelength range, high light-emitting efficiency, energy conservation and environmental protection, and can use factors such as long service life, small size and strong designability which exceed 10 ten thousand hours; the wavelength of the semiconductor light-emitting element can be as short as 200-350nm ultraviolet band by regulating and controlling the Al component; the AlGaN material with high Al component (Al component is more than 40%) has low Al mobility and low transverse growth rate, and the AlGaN and the sapphire substrate have larger lattice mismatch and thermal mismatch, so that the growth difficulty of the AlGaN material with high Al component (Al component is more than 40%) is far higher than that of the GaN material and the low Al componentThe divided AlGaN material (the Al component is less than 40 percent) is easy to generate surface problems of cracks, uneven growth, roughness and the like; meanwhile, the hole ionization energy of AlGaN with high Al component is increased sharply along with the increase of Al component, the hole ionization rate is reduced along with the increase of Al component, and the resistance value is increased along with the increase of Al component, so that the ionization free hole concentration of the electron blocking layer of the conventional deep ultraviolet semiconductor light-emitting element is lower than 1E17cm-3。
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a deep ultraviolet semiconductor light emitting device, which is suitable for high Al content Al by providing a conductive electron blocking layer and controlling the C/H/O content ratioyGa1-yThe content and proportion of C/H/O of the N material can effectively reduce the hole ionization energy of the layer, improve the hole ionization efficiency and Mg impurity solubility, and improve the concentration of free hole carriers after ionization.
In order to realize the purpose, the invention is realized by adopting the following technical scheme:
the invention provides a deep ultraviolet semiconductor light-emitting element which sequentially comprises a substrate, a buffer layer, a first conductive type semiconductor, a multi-quantum well, a conductive type electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the H concentration of the conductive type electron blocking layer is 1E 17-5E 18cm-3The concentration of C is 1E 16-1E 18cm-3O is 1E 17-1E 18cm-3。
In one possible embodiment, the first conductivity type semiconductor has an H concentration of 1E 17-1E 18cm-3The concentration of C is 1E 16-5E 16cm-3The concentration of O is 5E 16-5E 17cm-3(ii) a The semiconductor of the first conductivity type is AlxGa1-xN material, Al component x is 40-100%.
In a possible technical scheme, the multiple quantum wells are quantum well layers and quantum barrier layers AlaInbGa1-a-bN/AlcIndGa1-c-dA periodic quantum structure composed of N, with a quantum well layer of AlaInbGa1-a-b30-50% of N and Al component a, 50-100% of Al component c of the quantum barrier layer, and In component of the quantum well layer and the quantum barrier layerThe component b and the component d are both 0-20%, and the emitted light is deep ultraviolet band light with the wavelength of 200-350 nm; h concentration of the multiple quantum well is 5E 17-1E 18cm-3The concentration of C is 1E 16-5E 16cm-3The concentration of O is 5E 16-5E 17cm-3。
In one possible embodiment, the second conductivity type semiconductor has an H concentration of 1E 18-1E 22cm-3The concentration of C is 1E 17-1E 21cm-3O concentration is 1E 17-1E 21cm-3。
In one possible technical scheme, the conductive electron blocking layer is high Al component AlyGa1-yThe Al component y of the N material is 55-100%.
In one possible technical scheme, the Mg doping concentration of the conductive electron blocking layer is 5E 18-5E 20cm-3。
In one possible embodiment, the second conductivity type semiconductor has a Mg doping concentration of 5E 19-5E 20cm-3。
Compared with the prior art, the invention has the beneficial effects that:
the semiconductor of the first conductivity type is AlxGa1-xThe material N comprises 40% -100% of Al component x, the crystal morphology suitable for the first conductivity type semiconductor is regulated and controlled by controlling the C/H/O concentration of the first conductivity type semiconductor suitable for high Al component, the lattice mismatch between the first conductivity type semiconductor and a buffer layer is reduced, the generation of surface cracks is reduced, and the surface cracks can be reduced to be within 1mm of the edge; meanwhile, the electron ionization efficiency of the first conductive type semiconductor is improved, the electron ionization energy is reduced, the contact resistance of the semiconductor light-emitting element and the lateral expansion capability of current are reduced, the local current density is improved, the occurrence probability of local breakdown is reduced, and the ESD resistance capability is improved.
By controlling the C/H/O concentration of the multi-quantum well with high Al component to reduce the non-radiative recombination center of the multi-quantum well, the quantum local confinement effect of the multi-quantum well is improved, the confinement effect of an electron hole wave function is improved, and the radiative recombination efficiency of the multi-quantum well and the quantum efficiency of a semiconductor light-emitting element are improved.
The conductive electron blocking layer is high Al component AlyGa1-yThe Y of the Al component of the N material is 55-100%, and the hole ionization energy of the high Al component AlGaN is sharply reduced along with the rising of the Al component, so that the ionization free hole concentration of an electron blocking layer of a conventional deep ultraviolet semiconductor light-emitting element is lower than 1E17cm-3(ii) a By controlling the C/H/O content of the conductive electron blocking layer, the Al suitable for the high Al component is regulated and controlledyGa1-yThe content and proportion of C/H/O of the N material can effectively reduce the hole ionization energy of the layer, improve the hole ionization efficiency, and improve the concentration of free hole carriers to 1E18cm-3The above; the conductive electron blocking layer has a Mg doping concentration of 5E 18-5E 20cm-3The concentration of C/H/O and Mg are matched, so that the hole ionization efficiency and the Mg impurity solubility can be further improved.
By controlling the C/H/O concentration of the second conductive type semiconductor, the hole ionization efficiency of the second conductive type semiconductor can be improved, the hole ionization energy can be reduced, the resistance of a contact interface can be reduced, and the lateral expansion capability of ohmic contact and current can be improved; the second conductivity type semiconductor has a Mg doping concentration of 5E 19-5E 20cm-3。
Drawings
Fig. 1 is a schematic structural view of a semiconductor light-emitting element according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of the semiconductor light emitting element according to the embodiment of the present invention;
reference numerals: 100: a substrate; 101: a buffer layer; 102: a first conductivity type semiconductor; 103: a multiple quantum well; 104: a conductive electron blocking layer; 105: a semiconductor of a second conductivity type.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1, the deep ultraviolet semiconductor light emitting device according to embodiment 1 of the present invention includes, in order from bottom to top, a substrate 100, a buffer layer 101, a first conductivity type semiconductor 102, a multiple quantum well 103, a conductivity type electron blocking layer 104, and a second conductivity type semiconductor 105, where the substrate 100 is a nitride semiconductorA substrate on which a crystal can be epitaxially grown on the surface, and which satisfies a requirement that the transmittance of the substrate is high (for example, the transmittance of the substrate is 50% or more) in a wavelength range of light emitted from the semiconductor light-emitting element; examples of the material of the substrate 100 include aluminum nitride, sapphire, GaN, and the like; buffer layer 101: the buffer layer 101 exerts a buffer function, and from the viewpoint of the buffer function, the buffer layer 101 preferably has a single crystal structure, preferably contains Al, and particularly preferably contains AlN that is a group III nitride, and as a material constituting the buffer layer 101, any group III nitride compound semiconductor represented by the general formula AlGaInN can be applied to the present invention, and GaAlN is preferable, and the Al component is preferably 50% or more; the first conductive type semiconductor 102 and the second conductive type semiconductor 105 may be n-type semiconductor layers, the conductive type being n-type; or a p-type semiconductor layer, the conductivity type being p-type; a buffer layer, a first conductivity type semiconductor, a multiple quantum well, a second conductivity type hole injection layer, and a second conductivity type semiconductor are sequentially stacked on the substrate 100, and the stacked semiconductor layers are stacked by a method such as a metal organic chemical vapor deposition method (MOCVD method), a metal organic vapor phase epitaxy method (MOVPE method), a molecular beam epitaxy method (MBE method), and a hydride vapor phase epitaxy method (HVPE method); the conductive electron blocking layer has H concentration of 1E 17-5E 18cm-3The concentration of C is 1E 16-1E 18cm-3O concentration is 1E 17-1E 18cm-3The conductive electron blocking layer is high Al component AlyGa1-yThe Y of the Al component of the N material is 55-100%, and the hole ionization energy of the high Al component AlGaN is sharply reduced along with the rising of the Al component, so that the ionization free hole concentration of an electron blocking layer of a conventional deep ultraviolet semiconductor light-emitting element is lower than 1E17cm-3(ii) a H/O content can be regulated and controlled by controlling the pressure, temperature, MO source, flow rate and proportion of N2/H2/NH3 in the lamination process, C/H/O content of the conductive electron blocking layer can be controlled, and Al suitable for high Al component can be regulated and controlledyGa1-yThe content and proportion of C/H/O of the N material can effectively reduce the hole ionization energy of the layer, improve the hole ionization efficiency, and improve the concentration of free hole carriers to 1E18cm-3The above; preferably, the conductive electron blocking layer has a Mg doping concentration of 5E 18-5E 20cm-3The concentration of C/H/O and Mg are matched, so that the hole ionization efficiency and the Mg impurity solubility can be further improved; the Mg doping of the layer is not too high or too low, and the Mg with too high doping cannot be ionized into a self-compensation center, so that the free hole concentration is reduced, and the hole concentration of injected multiple quanta is reduced; and too low Mg doping concentration results in too low a free hole concentration and also results in a low hole concentration injected into the multiple quantum well.
As an improvement of the above technical means, the first conductivity type semiconductor has an H concentration of 1E17 to 1E18cm-3The concentration of C is 1E 16-5E 16cm-3The concentration of O is 5E 16-5E 17cm-3The first conductivity type semiconductor is AlxGa1-xThe material N comprises 40% -100% of Al component x, the crystal morphology suitable for the first conductivity type semiconductor is regulated and controlled by controlling the C/H/O concentration of the first conductivity type semiconductor suitable for high Al component, the lattice mismatch between the first conductivity type semiconductor and a buffer layer is reduced, the generation of surface cracks is reduced, and the surface cracks can be reduced to be within 1mm of the edge; meanwhile, the electron ionization efficiency of the first conductive type semiconductor is improved, the electron ionization energy is reduced, the contact resistance of the semiconductor light-emitting element and the lateral expansion capability of current are reduced, the local current density is improved, the occurrence probability of local breakdown is reduced, and the ESD resistance capability is improved.
The multiple quantum well 102 has a stacked structure in which well layers and barrier layers are alternately stacked, and preferably, the multiple quantum well has a quantum well layer and a quantum barrier layer AlaInbGa1-a-bN/AlcIndGa1-c-dA periodic quantum structure composed of N, with a quantum well layer of AlaInbGa1-a-bN, the Al component a is 30-50%, the Al component c of the quantum barrier layer is 50-100%, the In components b and d of the quantum well layer and the quantum barrier layer are both 0-20%, and the emitted light is deep ultraviolet band light and is 200-350 nm; h concentration of the multiple quantum well is 5E 17-1E 18cm-3The concentration of C is 1E 16-5E 16cm-3The concentration of O is 5E 16-5E 17cm-3(ii) a By controlling the C/H/O concentration of the multiple quantum well, the non-radiative recombination center of the multiple quantum well is reduced, and the quantum local confinement effect of the multiple quantum well is improvedThe confinement effect of an electron hole wave function is improved, and the radiation recombination efficiency of a multi-quantum well and the quantum efficiency of a semiconductor light-emitting element are improved.
As an improvement of the above technical means, the second conductivity type semiconductor has an H concentration of 1E18 to 1E22cm-3The concentration of C is 1E 17-1E 21cm-3O concentration is 1E 17-1E 21cm-3By controlling the C/H/O concentration of the second conductive type semiconductor, the hole ionization efficiency of the second conductive type semiconductor can be improved, the hole ionization energy can be reduced, the resistance of a contact interface can be reduced, and the ohmic contact and the lateral expansion capability of current can be improved; preferably, the second conductivity type semiconductor has a Mg doping concentration of 5E 19-5E 20cm-3(ii) a The Mg doping of the layer is not too high or too low, and the Mg with too high Mg doping cannot be ionized into a self-compensation center, but can reduce the concentration of free holes and become non-radiative recombination center light absorption; and if the Mg doping concentration is too low, the free hole concentration is too low, the contact resistance is large, and the current spreading is not good.
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor light emitting element according to one embodiment of the present invention, in which the contents of elements such as C/H/O/Mg/Si/Al/Ga in each layer are within the desired ranges.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (9)
1. The deep ultraviolet semiconductor light-emitting element is characterized by sequentially comprising a substrate, a buffer layer, a first conductive type semiconductor, a multi-quantum well, a conductive type electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the H concentration of the conductive type electron blocking layer is 1E 17-5E 18cm-3O concentration is 1E 17-1E 18cm-3。
2. The deep ultraviolet semiconductor light-emitting element as claimed in claim 1, wherein the first conductivity type semiconductor has an H concentration of 1E17 ℃ ™1E18cm-3The concentration of O is 5E 16-5E 17cm-3(ii) a The semiconductor of the first conductivity type is AlxGa1-xN material, Al component x is 40-100%.
3. The deep ultraviolet semiconductor light-emitting element as claimed in claim 1, wherein the multiple quantum well is a quantum well layer and a quantum barrier layer AlaInbGa1-a-bN/AlcIndGa1-c-dA periodic quantum structure composed of N, with a quantum well layer of AlaInbGa1-a- bN, the Al component a is 30-50%, the Al component c of the quantum barrier layer is 50-100%, the In components b and d of the quantum well layer and the quantum barrier layer are both 0-20%, and the emitted light is deep ultraviolet band light and is 200-350 nm; h concentration of the multiple quantum well is 5E 17-1E 18cm-3The concentration of C is 1E 16-5E 16cm-3The concentration of O is 5E 16-5E 17cm-3。
4. The deep ultraviolet semiconductor light-emitting element as claimed in claim 1, wherein the second conductivity type semiconductor has an H concentration of 1E18 to 1E22cm-3O concentration is 1E 17-1E 21cm-3。
5. The deep ultraviolet semiconductor light-emitting element according to claim 1, wherein the conductivity type electron blocking layer is Al of high Al compositionyGa1-yThe Al component y of the N material is 55-100%.
6. The deep ultraviolet semiconductor light-emitting element as claimed in claim 1, wherein the conductivity type electron blocking layer has a Mg doping concentration of 5E 18-5E 20cm-3。
7. The deep ultraviolet semiconductor light-emitting element as claimed in claim 1, wherein the second conductivity type semiconductor has a Mg doping concentration of 5E 19-5E 20cm-3。
8. The deep ultraviolet half of claim 5 or 6The conductor light-emitting element is characterized in that the content and the proportion of the H/O of the conductive electron blocking layer can effectively reduce the hole ionization energy of the layer, improve the hole ionization efficiency and improve the concentration of free hole carriers after ionization to 1E18cm-3The above; the H/O and Mg concentrations of the layer are matched with each other, so that the hole ionization efficiency and the Mg impurity solubility can be further improved.
9. The deep ultraviolet semiconductor light emitting element according to claim 2, wherein the H/O concentration of the first conductivity type semiconductor is controlled, so that the crystal morphology of the first conductivity type semiconductor can be controlled, the lattice mismatch between the first conductivity type semiconductor and the buffer layer is reduced, the generation of surface cracks is reduced, and the surface cracks can be reduced to within 1mm of the edge; meanwhile, the electron ionization efficiency of the first conductive type semiconductor is improved, the electron ionization energy is reduced, the contact resistance of the semiconductor light-emitting element and the lateral expansion capability of current are reduced, the local current density is improved, the occurrence probability of local breakdown is reduced, and the ESD resistance capability is improved.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116565087A (en) * | 2023-07-07 | 2023-08-08 | 江西兆驰半导体有限公司 | Light-emitting diode and preparation method thereof |
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