CN114420774A - Texturing process of crystalline silicon battery - Google Patents
Texturing process of crystalline silicon battery Download PDFInfo
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- CN114420774A CN114420774A CN202111428517.7A CN202111428517A CN114420774A CN 114420774 A CN114420774 A CN 114420774A CN 202111428517 A CN202111428517 A CN 202111428517A CN 114420774 A CN114420774 A CN 114420774A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 111
- 239000010703 silicon Substances 0.000 claims abstract description 111
- 238000005530 etching Methods 0.000 claims abstract description 101
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 238000005498 polishing Methods 0.000 claims abstract description 24
- 108010010803 Gelatin Proteins 0.000 claims abstract description 17
- 229920000159 gelatin Polymers 0.000 claims abstract description 17
- 239000008273 gelatin Substances 0.000 claims abstract description 17
- 235000019322 gelatine Nutrition 0.000 claims abstract description 17
- 235000011852 gelatine desserts Nutrition 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000012459 cleaning agent Substances 0.000 claims description 22
- 239000012752 auxiliary agent Substances 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- LYRFLYHAGKPMFH-UHFFFAOYSA-N octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(N)=O LYRFLYHAGKPMFH-UHFFFAOYSA-N 0.000 claims description 8
- 238000007790 scraping Methods 0.000 claims description 8
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 7
- 239000012964 benzotriazole Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 5
- 125000000400 lauroyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 229940037312 stearamide Drugs 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims description 3
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 238000003486 chemical etching Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 92
- 230000000052 comparative effect Effects 0.000 description 37
- 238000002360 preparation method Methods 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000306 component Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 6
- 238000002791 soaking Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/667—Neutral esters, e.g. sorbitan esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Wood Science & Technology (AREA)
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- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application discloses a crystalline silicon cell texturing process, which relates to the technical field of crystalline silicon cells and comprises the following steps: s1, cleaning and polishing; s2, etching for the first time; s3, coating; s4, etching for the second time; and S5, cleaning. The etching is carried out step by step, and gelatin is coated on the silicon wafer between two times of etching, so that the controllability of the silicon wafer in the etching process is improved, and the effect of chemical etching is optimized.
Description
Technical Field
The application belongs to the technical field of crystalline silicon batteries, and particularly relates to a texturing process of a crystalline silicon battery.
Background
The core component of the crystalline silicon cell is a silicon wafer arranged at the center of the cell, and then the crystalline silicon cell is processed layer by layer on the front side and the back side of the cell to obtain the finished crystalline silicon cell.
Because the crystalline silicon cell collects solar energy and converts the solar energy into electric energy for storage, the utilization rate of the crystalline silicon cell on the solar energy is one of important parameters for measuring the performance of the crystalline silicon cell. In order to reduce the reflectivity of the crystalline silicon battery to sunlight and improve the absorption effect of the crystalline silicon battery to light energy, the crystalline silicon battery can be subjected to surface texturing and addition of an antireflection layer in the manufacturing process. At present, chemical etching methods are mostly adopted in texturing processes of the surfaces of the silicon wafers, namely, etchants made of nitric acid and hydrofluoric acid are used for corroding the surfaces of the silicon wafers, so that the surfaces of the silicon wafers are of a concave textured structure, and the refraction and absorption effects of the silicon wafers on sunlight are further improved.
But the controllability of the chemical reaction is poor, so the texturing effect of the silicon wafer is not ideal and the expected target cannot be achieved due to the texturing method by the chemical etching method.
Disclosure of Invention
In order to improve the controllability of chemical etching method texturing and improve the texturing effect, the application provides a crystalline silicon cell texturing process.
The texturing process of the crystalline silicon battery adopts the following technical scheme:
a crystalline silicon cell texturing process, comprising the steps of:
s1, cleaning and polishing: preparing a cleaning agent, cleaning a silicon wafer in the cleaning agent for 5-10min, and then polishing and grinding the cleaned silicon wafer on a polishing machine on two sides;
s2, etching for the first time: preparing a first etching auxiliary agent, and placing the silicon wafer processed by the step S1 in the first etching auxiliary agent for first etching;
s3, coating: drying the silicon wafer prepared by the S2 treatment, coating gelatin on the surface of the silicon wafer, and then scraping the gelatin on the surface of the silicon wafer;
s4, etching for the second time: preparing a second etching aid, and placing the silicon wafer processed by the step S3 in the second etching aid for second etching;
s5, cleaning: and (4) cleaning the silicon wafer obtained by the treatment of S4 by using the cleaning agent prepared in S1, washing the silicon wafer for 2-5min by using clean water after the cleaning is finished, and drying to obtain a finished product of the silicon wafer after the texturing is finished.
By adopting the technical scheme, when the process is used for texturing the crystalline silicon battery silicon wafer, the impurities on the surface of the silicon wafer can be reduced by cleaning and polishing, the membrane structure on the surface layer of the silicon wafer is eliminated, and the etching effect is improved. And then, carrying out first etching on the surface of the silicon wafer, wherein a certain amount of depressions are formed on the surface of the silicon wafer after the first etching is finished. After the first etching is finished, the surface of the silicon wafer is coated with gelatin and scraped, and the recesses are filled with the gelatin. And then, carrying out second etching on the silicon wafer, wherein the second etching starts in the area uncovered by the gelatin firstly, so that the silicon wafer is subjected to second corrosion, and the etching on the surface of the silicon wafer can be more uniform. After the first etching and the second etching are finished, oil stains and impurities on the surface of the silicon wafer can be removed through alkali washing, and the etching effect is further guaranteed. Through the two etching processes, the controllability of the texturing of the surface chemical etching method of the silicon wafer is improved, and the texturing effect of the silicon wafer is further improved.
Optionally, the cleaning agent is prepared from the following components in parts by mass:
10-15 parts of lauroyl diacetate;
5-8 parts of polymeric ferric sulfate;
5-8 parts of potassium hydroxide;
1-2 parts of vinyl bis stearamide;
80-110 parts of deionized water.
By adopting the technical scheme, when the cleaning agent is used for cleaning the silicon wafer, the lauroyl diacetate can generate foam to clean stains on the surface of the silicon wafer; the polyferric sulfate can carry out polymerization flocculation on stains washed out in a washing environment, so that the stains are prevented from being dissolved and attached to a silicon wafer again; potassium hydroxide can construct a certain alkaline environment to saponify dirt on the silicon wafer; the vinyl bis stearamide can improve the uniformity of dispersion of each component substance in the cleaning agent. After the cleaning agent is used for cleaning the silicon wafer, the cleaning degree of the silicon wafer can be improved, and the chemical reaction in the texturing process caused by the texturing impurities is avoided.
Optionally, the first etching aid is prepared from the following components in parts by mass:
10-15 parts of hydrofluoric acid;
15-20 parts of nitric acid;
5-8 parts of acetic acid;
1-3 parts of citric acid;
80-100 parts of deionized water.
Optionally, the second etching aid is prepared from the following components in parts by mass:
7-10 parts of hydrofluoric acid;
10-12 parts of nitric acid;
5-8 parts of hypochlorous acid;
1-2 parts of benzotriazole;
100 portions and 150 portions of deionized water.
By adopting the technical scheme, when the first etching auxiliary agent and the second etching auxiliary agent are used for chemical texturing of the surface of the silicon wafer, the content ratio of nitric acid and hydrofluoric acid in the first etching auxiliary agent is higher than that of nitric acid and hydrofluoric acid in the second etching auxiliary agent. Therefore, during the first etching, a texture surface structure can rapidly appear on the surface of the silicon wafer, the texture surface structure after the first etching is covered by gelatin, and the area which is not covered by the silicon wafer is etched for the second time by the low-concentration second etching auxiliary agent, so that the texturing controllability of the chemical etching method is improved, and the texturing effect of the chemical etching method is improved. And weak acid is added into the first etching auxiliary agent and the second etching auxiliary agent, so that the concentration of hydrogen ions in the auxiliary agents can be reduced, and the reaction speed is slowed down. And benzotriazole is further added in the second etching auxiliary agent, so that the corrosion speed can be reduced, and the reaction controllability is further improved.
Optionally, the double-side polishing weight of the silicon wafer in the step S1 is between 0.35g and 0.55 g.
Through adopting above-mentioned technical scheme, carry out the polishing of wet moderate degree to the surface of silicon chip, can get rid of some oxide films, mar and dirt etc. on silicon chip top layer, promote the clean effect of silicon chip, and then promote the making herbs into wool effect of silicon chip.
Optionally, in step S2, the etching time of the silicon wafer is 30-60S, and the etching temperature is 20-25 ℃.
Optionally, in step S3, the etching time of the silicon wafer is 45-120S, and the etching temperature is 15-20 ℃.
By adopting the technical scheme, because the acidity of the first etching auxiliary agent is higher, the first rough etching of the silicon wafer can be finished within 30-60s when the temperature is controlled at 20-25 ℃ during the reaction; the second etching assistant has low acidity and benzotriazole as corrosion inhibitor, and the reaction temperature is reduced to 15-20 deg.C and the reaction time is controlled to 45-120 s. So that the operator can further control the reaction process, and the chemical etching texturing can be further controlled.
In summary, the present application includes at least one of the following benefits:
1. the etching is carried out step by step, and gelatin is coated on the silicon wafer between two times of etching, so that the controllability of the silicon wafer in the etching process is improved, and the effect of chemical etching is optimized.
2. The silicon wafer is cleaned by the special cleaning agent, so that stains and impurities on the silicon wafer can be reduced, and the influence on the chemical reaction in the texturing process is avoided.
3. Hypochlorous acid and benzotriazole are added into the second etching auxiliary agent, so that the controllability of the second etching can be further improved, and the texturing effect is further improved.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features of the art have not been described in order to avoid obscuring the present application.
Preparation examples 1 to 5
Preparation example 1: the preparation example provides a cleaning agent, which is prepared by mixing and dissolving the following components in percentage by mass: lauroyl diacetate: polymeric ferric sulfate: potassium hydroxide: vinyl bis stearamide: deionized water 12: 6: 6: 1.5: 90.
preparation example 2: the preparation example provides a first etching aid which is prepared by mixing and dissolving the following components in percentage by mass: hydrofluoric acid: nitric acid: acetic acid: citric acid: deionized water 12: 18: 6: 2: 90.
preparation example 3: the preparation example provides a second etching aid which is prepared by mixing and dissolving the following components in percentage by mass: hydrofluoric acid: nitric acid: hypochlorous acid: benzotriazole: deionized water 8: 11: 6: 1.5: 120.
preparation example 4: the present preparation example provided a second etching assistant, and the present preparation example was different from preparation example 3 in that hypochlorous acid was not added to the present preparation example.
Preparation example 5: the present preparation example provides a second etching assistant, and differs from preparation example 3 in that benzotriazole is not added to the present preparation example.
Example 1: the embodiment provides a texturing process of a crystalline silicon cell, which comprises the following steps:
a1-1 cleaning and polishing: taking a silicon wafer, cleaning the silicon wafer for 6min at 70 ℃ by using the cleaning agent prepared in preparation example 1, and polishing and grinding the silicon wafer by using a silicon wafer polishing and grinding machine after the cleaning is finished, wherein the weight of the silicon wafer subjected to double-side polishing and removal is 0.4 g;
a1-2 first etching: taking 500ml of the first etching auxiliary agent prepared in the preparation example 2, soaking the silicon wafer prepared by the treatment of A1-1 in the first etching auxiliary agent, and reacting for 45s at 23 ℃;
a1-3 coating: then drying the silicon wafer prepared by the treatment of the A1-2 in a drying box for 10min, coating gelatin on two sides of the silicon wafer after drying, and scraping once along the two sides of the silicon wafer by a scraping blade;
a1-4 second etching: then taking 500ml of the second etching aid prepared in the preparation example 3, soaking the silicon wafer processed by the A1-3 in the second etching aid, and reacting for 90s at 18 ℃;
a1-5 cleaning: and (3) cleaning the silicon wafer obtained by the treatment of the A1-4 again for 3min at 70 ℃ by using the cleaning agent prepared in the preparation example 1, then washing for 5min by using clear water, and finally placing the silicon wafer in a drying box to be dried for 10min at 80 ℃ to obtain a finished product silicon wafer after texturing.
Example 2: the embodiment provides a texturing process of a crystalline silicon cell, which comprises the following steps:
a2-1 cleaning and polishing: taking a silicon wafer, cleaning the silicon wafer for 5min at 70 ℃ by using the cleaning agent prepared in preparation example 1, and polishing and grinding the silicon wafer by using a silicon wafer polishing and grinding machine after the cleaning is finished, wherein the weight of the silicon wafer subjected to double-side polishing and removal is 0.35 g;
a2-2 first etching: taking 500ml of the first etching auxiliary agent prepared in the preparation example 2, soaking the silicon wafer prepared by the treatment of A2-1 in the first etching auxiliary agent, and reacting for 30s at 20 ℃;
a2-3 coating: then drying the silicon wafer prepared by the treatment of the A2-2 in a drying box for 10min, coating gelatin on two sides of the silicon wafer after drying, and scraping once along the two sides of the silicon wafer by a scraping blade;
a2-4 second etching: then taking 500ml of the second etching aid prepared in the preparation example 3, soaking the silicon wafer processed by the A2-3 in the second etching aid, and reacting for 45s at 15 ℃;
a2-5 cleaning: and (3) cleaning the silicon wafer obtained by the treatment of the A2-4 again for 2min at 70 ℃ by using the cleaning agent prepared in the preparation example 1, then washing for 5min by using clear water, and finally placing the silicon wafer in a drying box to be dried for 10min at 80 ℃ to obtain a finished product silicon wafer after texturing.
Example 3: the embodiment provides a texturing process of a crystalline silicon cell, which comprises the following steps:
a3-1 cleaning and polishing: taking a silicon wafer, cleaning the silicon wafer for 10min at 70 ℃ by using the cleaning agent prepared in preparation example 1, and polishing and grinding the silicon wafer by using a silicon wafer polishing and grinding machine after the cleaning is finished, wherein the weight of the silicon wafer subjected to double-side polishing and removal is 0.55 g;
a3-2 first etching: taking 500ml of the first etching auxiliary agent prepared in the preparation example 2, soaking the silicon wafer prepared by the treatment of A3-1 in the first etching auxiliary agent, and reacting for 60s at 25 ℃;
a3-3 coating: then drying the silicon wafer prepared by the treatment of the A3-2 in a drying box for 10min, coating gelatin on two sides of the silicon wafer after drying, and scraping once along the two sides of the silicon wafer by a scraping blade;
a3-4 second etching: then taking 500ml of the second etching aid prepared in the preparation example 3, soaking the silicon wafer processed by the A3-3 in the second etching aid, and reacting at 20 ℃ for 120 s;
a3-5 cleaning: and (3) cleaning the silicon wafer obtained by the treatment of the A3-4 again for 5min at 70 ℃ by using the cleaning agent prepared in the preparation example 1, then washing for 5min by using clear water, and finally placing the silicon wafer in a drying box to be dried for 10min at 80 ℃ to obtain a finished product silicon wafer after texturing.
Examples 4 to 5
Examples 4 to 5 are different from example 1 in that the mass ratios of the components of the cleaning agent, the first etching aid and the second etching aid in examples 4 to 5 are different from those in examples, and are specifically shown in table 1:
TABLE 1 proportions of the components of examples 4 to 5
Comparative example 1: the comparative example provides a texturing process for a crystalline silicon cell, and is different from the example 1 in that the crystalline silicon cell is cleaned by replacing a cleaning agent with clear water in the comparative example 1.
Comparative example 2: the comparative example, which is different from example 1 in that polishing and grinding of the silicon wafer were not performed in comparative example 2, provides a texturing process of a crystalline silicon cell.
Comparative example 3: the present comparative example, which is different from example 1 in that gelatin coating was not performed in comparative example 3, provides a texturing process of a crystalline silicon cell.
Comparative example 4: the present comparative example, which is different from example 1 in that the first etching and the coating of gelatin were not performed in comparative example 4, provides a texturing process of a crystalline silicon cell.
Comparative example 5: the present comparative example, which provides a texturing process of a crystalline silicon cell, is different from example 1 in that gelatin coating and second etching are not performed in comparative example 5.
Comparative example 6: the comparative example provides a texturing process of a crystalline silicon cell, and is different from the example 1 in that the second etching is performed by using the second etching aid provided in the preparation example 4 in the comparative example 6.
Comparative example 7: the comparative example provides a texturing process of a crystalline silicon cell, and is different from the example 1 in that the second etching is performed by using the second etching aid provided in the preparation example 5 in the comparative example 7.
Silicon wafer double-side reflectivity test
The silicon wafers prepared in example 1 and comparative examples 1 to 7 were subjected to a reflectance test on both sides, and the test results are shown in table 2:
TABLE 2 double-sided reflectivity test results for silicon wafers
The test results obtained in table 1 were analyzed:
comparing the data of example 1, comparative example 1 and comparative example 2, it can be seen that the reflectance data of example 1 is significantly better than that of comparative example 1 and comparative example 2. Therefore, the silicon wafer can be polished and cleaned by the cleaning agent provided by the application, the cleaning degree of the silicon wafer can be obviously improved, and the attached impurities and oil stains on the silicon wafer are reduced. After the silicon wafer is cleaned and polished, the surface is smoother, so that the reaction uniformity and controllability in the texturing process are improved; and oil stain and impurities are reduced, unexpected side reaction in the etching process can be avoided, and the controllability of chemical reaction in the wool making process is further improved.
Comparing the data of example 1 and comparative example 3, it can be seen that the texture of comparative example 3 is not uniform. The reason is that gelatin is not coated between the first etching and the second etching, and the second etching is performed on the basis of the first etching, so that the pits generated in the first etching are further enlarged, the uniformity of the textured structure of the crystalline silicon battery is influenced, and the performance of the crystalline silicon battery is influenced to a certain extent.
Comparing the data of example 1, comparative example 4 and comparative example 5, it can be seen that the reflectance data of example 1 is significantly due to comparative example 4 and comparative example 5. This is because comparative examples 4 and 5 were etched only once, which is similar to the conventional etching process, thus proving that the texturing process provided by the present application is due to the conventional chemical etching texturing process.
Comparing the data of example 1, comparative example 6 and comparative example 7, it can be seen that the reflectance data of example 1 is superior to that of comparative example 6 and comparative example 7. The weak acid and the corrosion inhibitor are added into the second etching aid in the embodiment 1, so that the etching speed can be slowed down and the reaction controllability can be improved, and the quality of the textured surface is improved.
The preferred embodiments of the present application have been described in detail, but the present application is not limited to the details of the foregoing embodiments, and various equivalent changes may be made to the technical solutions of the present application within the technical spirit of the present application, and these equivalent changes are all within the scope of the present application.
Claims (7)
1. A crystalline silicon cell texturing process is characterized by comprising the following steps:
s1, cleaning and polishing: preparing a cleaning agent, cleaning a silicon wafer in the cleaning agent for 5-10min, and then polishing and grinding the cleaned silicon wafer on a polishing machine on two sides;
s2, etching for the first time: preparing a first etching auxiliary agent, and placing the silicon wafer processed by the step S1 in the first etching auxiliary agent for first etching;
s3, coating: drying the silicon wafer prepared by the S2 treatment, coating gelatin on the surface of the silicon wafer, and then scraping the gelatin on the surface of the silicon wafer;
s4, etching for the second time: preparing a second etching aid, and placing the silicon wafer processed by the step S3 in the second etching aid for second etching;
s5, cleaning: and (4) cleaning the silicon wafer obtained by the treatment of S4 by using the cleaning agent prepared in S1, washing the silicon wafer for 2-5min by using clean water after the cleaning is finished, and drying to obtain a finished product of the silicon wafer after the texturing is finished.
2. The crystalline silicon cell texturing process according to claim 1, wherein the cleaning agent is prepared from the following components in parts by mass:
10-15 parts of lauroyl diacetate;
5-8 parts of polymeric ferric sulfate;
5-8 parts of potassium hydroxide;
1-2 parts of vinyl bis stearamide;
80-110 parts of deionized water.
3. The crystalline silicon cell texturing process of claim 1, wherein the first etching aid is prepared from the following components in parts by mass:
10-15 parts of hydrofluoric acid;
15-20 parts of nitric acid;
5-8 parts of acetic acid;
1-3 parts of citric acid;
80-100 parts of deionized water.
4. The crystalline silicon cell texturing process according to claim 3, wherein the second etching aid is prepared from the following components in parts by mass:
7-10 parts of hydrofluoric acid;
10-12 parts of nitric acid;
5-8 parts of hypochlorous acid;
1-2 parts of benzotriazole;
100 portions and 150 portions of deionized water.
5. The crystalline silicon cell texturing process of claim 1, wherein the silicon wafer has a double-side polishing weight of 0.35-0.55g in step S1.
6. The crystalline silicon cell texturing process of claim 4, wherein in step S2, the etching time of the silicon wafer is 30-60S, and the etching temperature is 20-25 ℃.
7. The crystalline silicon cell texturing process of claim 5, wherein in step S3, the etching time of the silicon wafer is 45-120S, and the etching temperature is 15-20 ℃.
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