CN114400423A - Millimeter wave switch based on coupler structure and design method - Google Patents

Millimeter wave switch based on coupler structure and design method Download PDF

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CN114400423A
CN114400423A CN202210069402.1A CN202210069402A CN114400423A CN 114400423 A CN114400423 A CN 114400423A CN 202210069402 A CN202210069402 A CN 202210069402A CN 114400423 A CN114400423 A CN 114400423A
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coupler
spst
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spdt
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CN114400423B (en
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戈泽宇
陈浪
项勇
陈力生
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Suzhou Xixin Rf Microelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

The invention relates to a millimeter wave switch based on a coupler structure and a design method thereof. The first type of symmetrical SPDT is formed by two first type SPSTs symmetrically, P1dB is high when the SPDT transmits, the second type SPST comprises a second coupler and an L-nMOS switch, a first port is suspended, a second port is connected with an ANT end, a third port is connected with the L-nMOS switch and is grounded, and a fourth port is connected with a TX end. The second type of symmetric SPDT is formed by two second type SPSTs symmetrically, the power bearing capacity is high during isolation, broadband design can be realized during isolation, the third type of asymmetric SPDT is formed by a first type SPST and a second type SPST, the first type SPST is used as Tx to improve the transmission power capacity, and the second type SPST is used as Rx to provide the high-isolation power bearing capacity.

Description

Millimeter wave switch based on coupler structure and design method
Technical Field
The invention belongs to the technical field of radio frequency switches, and particularly relates to a millimeter wave switch based on a coupler structure and a design method.
Background
With the development of mobile communication technology from the first generation (1G) to the fifth generation (5G), people enter a new era of everything interconnection, mobile terminal equipment such as smart phones greatly facilitate the lives of people, and the mobile communication technology is also developed rapidly. The millimeter wave wireless communication technology is an extension of the microwave wireless communication technology to a higher frequency band, and has been widely paid attention and paid attention in recent years, and the main reasons are as follows: the frequency spectrum resources corresponding to the millimeter waves are rich; the transmission characteristics of the millimeter waves are good; the rapid development of modern chip manufacturing processes provides guarantee for the manufacture of millimeter wave communication equipment; millimeter wave communication technology has become a development need for many emerging technologies. The rf switch is a key component of the rf front end, and the circuit performance of the rf switch directly affects the performance of the whole rf transceiver system. The Insertion Loss (IL) of the switch reduces the signal voltage on the receive link, reduces the sensitivity of the receive link, resulting in a deterioration of the noise figure, and also reduces the transmit signal voltage, resulting in an increase in the power consumption of the transmit link and a decrease in the added efficiency. In order to prevent the LNA of the receiving link from being damaged due to the leakage of a large-power signal of the transmitting link, the isolation performance between channels must be improved by the radio frequency switch.
In the traditional switch design, two MOS tubes respectively form a circuit transceiving path, and a resistor of thousands of ohms is added to a grid electrode, so that the signal isolation of a signal path and a bias path is increased. The branch of the structure has no other elements, so the insertion loss is small, but the branch is lack of an isolating device, so the isolation degree of the two branches is poor in a high-frequency band, and a plurality of parallel transistors are added on the basis of receiving and transmitting so as to improve the isolation degree. But this causes degradation of the insertion loss and also limits the linearity of the switch. In recent years, chinese patent application No. CN201720859947.7 discloses "a DC-20GHz absorption single-pole double-throw switch", which adopts a scheme of multi-stage series-parallel cascade connection, and the receiving and transmitting branches are mirror-symmetric. Multi-stage cascading is advantageous for isolation and port matching designs, but as mentioned in this patent, multi-stage cascading requires a tradeoff between insertion loss and isolation, and even further linearity considerations. Therefore, in response to the current requirement of wireless communication technology for linearity, the desire of switch design for power capacity, and the miniaturization of chip area size, it is necessary to design a millimeter wave switch chip with high linearity, high power capacity, and smaller area.
Disclosure of Invention
In order to solve the above problems in the related art, the present invention provides a millimeter wave switch based on a coupler structure and a design method thereof.
The present invention is achieved in such a way that,
a millimeter wave switch based on a coupler structure comprises a coupler with four ports,
the voltage and current of each port satisfy the following conditions:
Figure RE-GDA0003537635810000021
wherein v1 is the first port voltage, v2 is the second port voltage, v3 is the third port voltage, v4 is the fourth port voltage, I1Is a first port current, I2Is the second port current, I3Is a third port current, I4Is the fourth port current.
Furthermore, the coupler is connected with an ANT end through a second port, a fourth port is connected with an Rx end or a Tx end, and a third port or a first port is connected with an L-nMOS switch.
Furthermore, the coupler is a first coupler, a first port of the first coupler is connected with the first L-nMOS switch and is grounded through the first L-nMOS switch, a fourth port of the first coupler is connected with the TX terminal, and a third port of the first coupler is grounded, so that the first type SPST is formed.
Furthermore, the two first-type SPSTs are symmetrically arranged to form a first-type symmetrical SPDT, and a fourth port of one of the first-type SPSTs is connected to the RX end, a fourth port of the other first-type SPST is connected to the TX end, and two second ports of the two first-type SPSTs are connected to the ANT end.
Furthermore, the coupler is a second coupler, a third port of the second coupler is connected with the second L-nMOS switch and is grounded through the second L-nMOS switch, a fourth port of the second coupler is connected with the TX end, a third port of the second coupler is grounded, and a first port of the second coupler is suspended to form a second SPST type.
Furthermore, the two second-class SPSTs are symmetrically arranged to form a second-class symmetric SPDT, and a fourth port of one of the second-class SPSTs is connected to the RX end, a fourth port of the other second-class SPST is connected to the TX end, and two second ports of the two second-class SPSTs are connected to the ANT end.
Further, the coupler comprises a first coupler and a second coupler, wherein a first port of the first coupler is connected with the first L-nMOS switch and is grounded through the L-nMOS switch, a TX terminal is connected through a fourth port of the first coupler, and a third port of the first coupler is grounded to form a first-class SPST;
a third port of the second coupler is connected with the second L-nMOS switch, is grounded through the second L-nMOS switch, is connected with the RX end through a fourth port of the second coupler, is grounded through a third port of the second coupler, and is suspended in the air through a first port of the second coupler to form a second SPST type;
and two second ports of the first SPST and the second SPST are connected and then connected with the ANT end to form a third asymmetric SPDT.
Further, the adopted L-nMOS switch uses a CMOS transistor, and the inductor is an on-chip inductor.
A millimeter wave switch design method based on a coupler structure,
the first coupler and the second coupler are designed,
connecting a first port of a first coupler with a first L-nMOS switch, and grounding through the first L-nMOS switch, wherein a fourth port of the first coupler is connected with a TX (transmission X) end, a third port of the first coupler is grounded, and a second port of the first coupler is connected with an ANT (anti-parallel port) end to form a first SPST (quasi-SPST);
connecting a third port of the second coupler with a second L-nMOS switch, and grounding through the second L-nMOS switch, wherein a fourth port of the second coupler is connected with a TX (transmission X) end, a third port of the second coupler is grounded, a first port of the second coupler is suspended, and a second port of the second coupler is connected with an ANT end to form a second SPST (class II SPST);
the first and second types of SPSTs are combined into symmetrical or asymmetrical SPDTs, either alone or with each other.
Further, the symmetric SPDT includes:
the fourth port of one first coupler in the two first-class SPSTs is connected with an RX end, and the second ports of the two first couplers are connected with an ANT end to form a first-class symmetrical SPDT;
or the fourth port of one second coupler in the two second-class SPSTs is connected with the RX end, and the second ports of the two second couplers are connected with the ANT end to form a second-class symmetrical SPDT;
the asymmetric SPDT comprises:
and two second ports of the first class SPST and the second class SPST are connected with an ANT end and a fourth port of the second coupler is connected with an RX end to form a third class asymmetric SPDT.
Compared with the prior art, the invention has the beneficial effects that:
the first type of SPST or symmetric SPDT of the present invention has a high P1dB in transmission, and in terms of bandwidth, the bandwidth in transmission can be the bandwidth of the coupler. The power bearing capacity of the second type SPST or symmetrical SPDT is very high during isolation, and a broadband can be realized during isolation. Asymmetric SPDT, combining the requirements of two SPSTs for switch P1dB combines the advantages of both types of SPST, using one coupler as TX to further increase transmit power capability and the other coupler as RX to provide high isolation power capability. The millimeter wave switch based on the coupler structure can obtain higher power capacity, realize better linearity and effectively reduce the area of a chip.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 shows a schematic diagram of a millimeter wave switch structure coupler based on a coupler structure of the present invention;
FIG. 2 is a schematic diagram of a first type of SPST according to the present invention;
FIG. 3 is a schematic diagram of a first type of symmetrical SPDT;
FIG. 4 is a graph of performance curves for a first class of symmetrical SPDT of the present invention, (a) simulated loss, which is 1.5 dB; (b) for isolated simulation, the isolation is simulated by 24.2 dB;
FIG. 5 shows a second class SPST architecture of the present invention;
FIG. 6 shows a schematic diagram of the present invention using a second type of symmetric SPDT;
FIG. 7 shows a performance graph of a second class of symmetric SPDT according to the present invention; (a) a P1dB simulation curve for a second type of symmetric SPDT, (b) a simulated transmission insertion loss, 1.9 dB; (c) for the isolation simulation curve, where the simulated isolation is 30dB, the power-carrying capability at isolation is high.
FIG. 8 is a schematic diagram of a third type of asymmetric SPDT according to the present invention;
fig. 9 shows performance graphs of a third type of asymmetric SPDT according to the present invention, where (a) represents insertion loss during transmission, (b) represents isolation during transmission, (c) represents insertion loss during reception, and (d) represents isolation during reception.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited to the specific embodiments disclosed below.
A millimeter wave switch based on a coupler structure comprises a coupler with four ports, wherein the coupler is connected with an ANT end through a second port, a fourth port is connected with an Rx end or a Tx end, and a third port or a first port is connected with an L-nMOS switch.
The coupler is a first coupler, a first port of the first coupler is connected with the first L-nMOS switch and is grounded through the first L-nMOS switch, a fourth port of the first coupler is connected with the TX terminal, and a third port of the first coupler is grounded, so that the first type SPST is formed.
The two first SPSTs are symmetrically arranged to form a first symmetric SPDT, the fourth port of one of the first SPSTs is connected with an RX end, the fourth port of the other first SPST is connected with a TX end, and the two second ports of the two first SPSTs are connected with an ANT end.
The coupler is a second coupler, a third port of the second coupler is connected with the second L-nMOS switch and grounded through the second L-nMOS switch, a fourth port of the second coupler is connected with the TX end, a third port of the second coupler is grounded, and a first port of the second coupler is suspended to form a second type SPST.
The two second-class SPSTs are symmetrically arranged to form a second-class symmetrical SPDT, the fourth port of one second-class SPST is connected with an RX end, the fourth port of the other second-class SPST is connected with a TX end, and the two second ports of the two second-class SPSTs are connected with an ANT end.
The coupler comprises a first coupler and a second coupler, wherein a first port of the first coupler is connected with the first L-nMOS switch and grounded through the L-nMOS switch, a TX end is connected through a fourth port of the first coupler, and a third port of the first coupler is grounded to form a first SPST type;
a third port of the second coupler is connected with the second L-nMOS switch, is grounded through the second L-nMOS switch, is connected with the RX end through a fourth port of the second coupler, is grounded through a third port of the second coupler, and is suspended in the air through a first port of the second coupler to form a second SPST type;
and two second ports of the first SPST and the second SPST are connected and then connected with the ANT end to form a third asymmetric SPDT.
Fig. 1 shows a coupler schematic diagram of a millimeter wave switch structure based on a coupler structure of a coupler, where the coupler includes 4 ports. The voltage-current formula of each port is as follows:
Figure RE-GDA0003537635810000071
fig. 2 shows a schematic diagram of a first SPST structure of the present invention, in which a third port of a coupler is connected to ground, a first port is connected to a switch, a fourth port is connected to a Tx port, and a second port is connected to an ANT port. The voltage V of the third port and the first port when the first L-nMOS switch is closed to ground3＝0，V1Therefore, by using the above equation for the voltage and current at each port of each coupler, it can be analyzed that:
Figure RE-GDA0003537635810000072
it can thus be seen that power is transferred from the fourth port to the second port and that the emission can achieve a very high P1dB since the first port is connected to ground. And when the first L-nMOS is switched off, the voltage of the third port and the current of the first port are V3＝0，I1When 0, it can be analyzed that:
Figure RE-GDA0003537635810000073
power cannot be transmitted from the second port to the fourth port, the second port is high-impedance, and the voltage of the first port is equal to the voltage amplitude of the second port
Figure RE-GDA0003537635810000074
The power-bearing capability when the SPST is off is improved.
In terms of bandwidth, the switch at the first port 1 consists of an L-nMOS, which is a small resistor when turned off and an LC network that resonates at the design frequency when turned on. When turned off, the second port to fourth port transmission bandwidth is dependent on the coupler bandwidth. On, the LC can only be impedance at the design frequency, so the isolation bandwidth on off depends on the L-nMOS network at the first port.
Fig. 3 shows a schematic structural diagram of a first type of symmetric SPDT according to the present invention, which is composed of two first type SPSTs, wherein the two first type SPSTs are connected via a second port and connected to an ANT terminal to form an up-down symmetric structure, a Tx terminal is connected to a fourth port of a first coupler, and an Rx terminal is connected to another fourth port of the first coupler. The symmetrical SPDT switch takes the advantages of the first SPST switch, the P1dB is very high during transmission, a broadband design can be realized, the power bearing capacity is improved compared with that of a common trunk nMOS during isolation, and the symmetrical SPDT switch is suitable for the design with high requirements on the P1dB during transmission. The simulation curve of P1dB for this structure is shown in FIG. 2, and FIG. 4(a) is a simulation with a simulation loss of 1.5 dB. Fig. 4(b) is a simulated isolation of isolation 24.2 dB.
Fig. 5 and 6 are schematic structural diagrams of a second type of SPST switch and a second type of symmetric SPDT designed by using the second type of SPST structure, respectively. And a third port of a second coupler of the second type of SPST switch is connected with a second L-nMOS switch, a first port is connected with a floating port, a fourth port is connected with a Tx end, and a second port is connected with an ANT end. When the second L-nMOS switch is closed, the voltage of the third port and the current of the first port are V3＝0，I10, thus:
Figure RE-GDA0003537635810000081
energy cannot leak from the second port to the fourth port. And when the second L-nMOS switch is turned on, I3＝0， I10, analyzed:
Figure RE-GDA0003537635810000082
energy is allowed to flow between the second port and the fourth port, the voltage at the third port being equal to the voltage at the fourth port
Figure RE-GDA0003537635810000083
Double, P1dB is reduced in transmission.
In terms of bandwidth, the switch at the third port consists of an L-nMOS, which is a small resistor when turned off and an LC network that resonates at the design frequency when turned on. The switch at the third port is closed and the third port is grounded through a small resistor, and the bandwidth of the L-nMOS is not as much affected by the nMOS on ground. The SPST is off at this time and the isolation bandwidth depends on the coupler design, which is desirable because it is easier for the coupler to achieve a large bandwidth. And opening the switch at the third port, and closing the nMOS in the L-nMOS, wherein the L-nMOS is an LC network. The SPST is in the transmit state at this time, the bandwidth at this time depending on the L-nMOS network and the coupler. Therefore, the second type of symmetric SPDT shown in fig. 6 combines the advantages of the second type of SPDT, and has high power-bearing capability in isolation, and can realize a broadband design in isolation.
Fig. 7 shows a performance graph of a second class of symmetric SPDT of the present invention. Graph (a) is a P1dB simulation curve of the second type of symmetric SPDT, and graph (b) is a simulated transmission insertion loss, which is 1.9dB and has better fit. Graph (c) is an isolation simulation curve, where the simulated isolation is 30dB and the power carrying capability at isolation is high.
Fig. 8 shows a third type of asymmetric SPDT structure of the present invention, and combines the features of the above two types of connections, and proposes the structure of the third type of asymmetric switch, because the switch has high requirement for TX P1dB when transmitting and low requirement for P1dB when receiving. Achieving a high P1dB for TX requires that the TX branch be able to transmit high power and the RX branch be able to withstand high power. The first type of connection is used as TX to further increase the transmit power capability. The second type of connection is used as RX to provide high isolation power capability. Therefore, the advantages and disadvantages of the first type of SPDT and the second type of SPDT are complementary by connecting the first port of the first coupler to the second port of the second coupler and to the ANT terminal, connecting the TX terminal to the fourth terminal of the first coupler, and connecting the RX terminal to the fourth terminal of the second coupler. The resulting performance achieved is shown in fig. 9. Fig. (a) is a P1dB simulation graph, (b) is an insertion loss at the time of transmission, (c) is an isolation at the time of transmission, (d) is an insertion loss at the time of reception, and (e) is an isolation at the time of reception.
The invention also provides a design method, according to different requirements, the first coupler and the second coupler are combined into a symmetrical structure or an asymmetrical structure.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A millimeter wave switch based on a coupler structure is characterized by comprising a coupler with four ports,
the voltage and current of each port satisfy the following conditions:
Figure FDA0003481488520000011
wherein v1 is the first port voltage, v2 is the second port voltage, v3 is the third port voltage, v4 is the fourth port voltage, I1Is a first port current, I2Is the second port current, I3Is a third port current, I4Is the fourth port current.
2. The millimeter wave switch based on a coupler structure as claimed in claim 1, wherein the coupler is connected to the ANT terminal through a second port, the fourth port is connected to the Rx terminal or the Tx terminal, and the third port or the first port is connected to an L-nMOS switch.
3. The millimeter wave switch based on a coupler structure as claimed in claim 2, wherein the coupler is a first coupler, the first port of the first coupler is connected to the first L-nMOS switch and is grounded through the first L-nMOS switch, the fourth port of the first coupler is connected to the TX terminal, and the third port of the first coupler is grounded, forming a first SPST.
4. The millimeter wave switch based on the coupler structure as claimed in claim 3, wherein two first SPSTs are symmetrically arranged to form a first symmetric SPDT, and the fourth port of one of the first SPSTs is connected to the RX port, the fourth port of the other first SPST is connected to the TX port, and the two second ports of the two first SPSTs are connected to the ANT port.
5. The millimeter wave switch based on a coupler structure as claimed in claim 2, wherein the coupler is a second coupler, a third port of the second coupler is connected to the second L-nMOS switch and grounded through the second L-nMOS switch, a fourth port of the second coupler is connected to the TX terminal, a third port of the second coupler is grounded, and a first port of the second coupler is suspended to form the SPST of the second type.
6. The millimeter wave switch based on the coupler structure as claimed in claim 5, wherein the two SPST structures of the second type are symmetrically arranged to form a SPDT of the second type, and the fourth port of one SPST of the second type is connected to the RX port, the fourth port of the other SPST of the second type is connected to the TX port, and the two second ports of the two SPSTs of the second type are connected to the ANT port.
7. The millimeter wave switch based on a coupler structure according to claim 2, wherein the coupler comprises a first coupler and a second coupler, wherein a first port of the first coupler is connected to the first L-nMOS switch and is grounded through the L-nMOS switch, a TX port is connected through a fourth port of the first coupler, and a third port of the first coupler is grounded to form a first SPST;
a third port of the second coupler is connected with the second L-nMOS switch, is grounded through the second L-nMOS switch, is connected with the RX end through a fourth port of the second coupler, is grounded through a third port of the second coupler, and is suspended in the air through a first port of the second coupler to form a second SPST type;
and two second ports of the first SPST and the second SPST are connected and then connected with the ANT end to form a third asymmetric SPDT.
8. The coupler structure-based millimeter wave switch of claim 2, wherein the L-nMOS switch is implemented using CMOS transistors and the inductor is an on-chip inductor.
9. A millimeter wave switch design method based on coupler structure is characterized in that,
the first coupler and the second coupler are designed,
connecting a first port of a first coupler with a first L-nMOS switch, and grounding through the first L-nMOS switch, wherein a fourth port of the first coupler is connected with a TX (transmission X) end, a third port of the first coupler is grounded, and a second port of the first coupler is connected with an ANT (anti-parallel port) end to form a first SPST (quasi-SPST);
connecting a third port of the second coupler with a second L-nMOS switch, and grounding through the second L-nMOS switch, wherein a fourth port of the second coupler is connected with a TX (transmission X) end, a third port of the second coupler is grounded, a first port of the second coupler is suspended, and a second port of the second coupler is connected with an ANT end to form a second SPST (class II SPST);
the first and second types of SPSTs are combined into symmetrical or asymmetrical SPDTs, either alone or with each other.
10. The design method of claim 9, wherein the symmetrical SPDT comprises:
the fourth port of one first coupler in the two first-class SPSTs is connected with an RX end, and the second ports of the two first couplers are connected with an ANT end to form a first-class symmetrical SPDT;
or the fourth port of one second coupler in the two second-class SPSTs is connected with the RX end, and the second ports of the two second couplers are connected with the ANT end to form a second-class symmetrical SPDT;
the asymmetric SPDT comprises:
and two second ports of the first class SPST and the second class SPST are connected with an ANT end and a fourth port of the second coupler is connected with an RX end to form a third class asymmetric SPDT.
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