CN114400267B - Photoelectric detector integrated with double absorption areas and preparation method thereof - Google Patents
Photoelectric detector integrated with double absorption areas and preparation method thereof Download PDFInfo
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000031700 light absorption Effects 0.000 claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000009977 dual effect Effects 0.000 claims description 10
- 239000011358 absorbing material Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The application relates to the field of integrated chips and discloses a photoelectric detector integrated with double absorption regions and a preparation method thereof, wherein the photoelectric detector comprises a substrate, a second absorption active region, an optical transmission waveguide region and a first absorption active region which are arranged from bottom to top; the first absorption active region is transversely and sequentially provided with a first P++ doped region, a first P+ doped region, a first intrinsic I region, a first N+ doped region and a first N++ doped region, wherein the first P++ doped region is electrically connected with the first metal electrode; a second P++ doped region, a second P+ doped region, a second intrinsic I region, a second N+ doped region and a second N++ doped region are transversely arranged in the second absorption active region in sequence, and the second P++ doped region is electrically connected with the second metal electrode; the first and second N++ doped regions are electrically connected through metal vias. The photoelectric detector has two different light absorption areas, can detect high-power and multiband light signals, and has higher responsivity and larger photoelectric response bandwidth.
Description
Technical Field
The application relates to the field of integrated chips, in particular to a photoelectric detector integrated with double absorption areas and a preparation method thereof.
Background
Photo-electric detectors are commonly used to detect light or other electromagnetic energy. The current detector has important practical application in the aspects of wired or wireless communication, sensing, monitoring, national security field and the like. In particular, in an opto-electronic integrated chip, a photo-detector is one of the core chips at the receiving end, which converts high-speed optical data into electrical signals. Photo-electric detectors generally use materials with thermoelectric, photoelectric, or electroabsorption effects to detect the intensity of light. In the optical communications band, the main material systems currently based on are group III-V materials, germanium (Ge), silicon (Si). Although detectors based on these material systems achieve good performance and commercialization, there are a number of disadvantages, such as single optical response wavelength, large device size, complex fabrication process, high cost, etc.
Disclosure of Invention
The application aims to: aiming at the problems in the prior art, the application provides a photoelectric detector integrated with double absorption areas and a preparation method thereof, wherein the photoelectric detector is provided with two different light absorption areas, can detect high-power and multiband optical signals, and has higher responsivity and larger photoelectric response bandwidth.
The technical scheme is as follows: the application provides a photoelectric detector integrated with double absorption regions, which comprises a substrate, a second absorption active region, an optical transmission waveguide region and a first absorption active region, wherein the substrate, the second absorption active region, the optical transmission waveguide region and the first absorption active region are sequentially arranged from bottom to top; the first absorption active region comprises a first P++ doped region, a first P+ doped region, an undoped first intrinsic I region, a first N+ doped region and a first N++ doped region which are transversely and sequentially arranged, and the first P++ doped region is electrically connected with the first metal electrode; the second absorption active region comprises a second P++ doped region, a second P+ doped region, an undoped second intrinsic I region, a second N+ doped region and a second N++ doped region which are transversely and sequentially arranged, and the second P++ doped region is electrically connected with the second metal electrode; the first N++ doped region and the second N++ doped region are electrically connected through a metal through hole between the first N++ doped region and the second N++ doped region.
Further, a groove structure is formed in the middle of the optical transmission waveguide area. The refractive index (mode effective refractive index) of an optical waveguide is generally determined by the intrinsic refractive index of the material and the structure of the waveguide; in general, tuning the waveguide structure is a commonly used effective approach that can help to design the coupling efficiency between waveguides; for the groove structure in the application, the refractive index adjustment can be realized by changing the parameters of the depth and width of the groove, the width and thickness of the external optical waveguide section and the like; the advantage of such a groove structure is that the index of refraction adjustment dimension is increased and more adjustment parameters are available to achieve efficient optical coupling of the light transmitting waveguide region with the first light absorbing region and the second light absorbing region.
Preferably, the width w1 of the first intrinsic I region is 50-500 nm; and/or the width w2 of the second intrinsic I region is 50-500 nm. The widths of the first intrinsic I region and the second intrinsic I region can influence the 3dB bandwidth and the detection quantum efficiency of the detector, the 3dB bandwidth is reduced due to the excessively wide width, the detection quantum efficiency is reduced due to the excessively narrow width, and the widths of the first intrinsic I region and the second intrinsic I region are controlled to be 50-500 nm, so that the proper 3dB bandwidth and the detection quantum efficiency can be obtained. Preferably 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, etc., but are not limited to the values recited, and other values not recited in the range of values are equally applicable.
Further, a portion of the first p+ doped region, the first intrinsic I region, and a portion of the first n+ doped region form a first light absorbing region; a part of the second P+ doped region, the second intrinsic I region and a part of the second N+ doped region form a second light absorption region; the light-transmitting waveguide region is located between the first light-absorbing region and the second light-absorbing region.
Preferably, the distance h1 between the light transmission waveguide region and the first light absorption region is 50-400 nm; and/or the distance h2 between the light transmission waveguide region and the second light absorption region is 50-400 nm. The distance between the light transmission waveguide area and the first light absorption area and the second light absorption area can influence the detection efficiency and the light power detection range of the detector, the too large distance can lead to less energy of light entering the absorption area, the detection efficiency is reduced, the too small distance can lead to the phenomenon that the light absorption area is easy to be saturated under the high power incidence, the detection light power range is reduced, the distance between the light transmission waveguide area and the first light absorption area and the second light absorption area is controlled to be 50-400 nm, the high efficiency and the high light power detection can be realized, and the distance between the light transmission waveguide area and the first light absorption area and the second light absorption area is preferably 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm and the like, but the method is not limited to the listed values, and other non-listed values in the numerical range are applicable.
Preferably, the doping concentrations of the first p++ doped region, the second p++ doped region, the first n++ doped region and the second n++ doped region are 1×10, respectively 20 /cm 3 ~8×10 20 /cm 3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the doping concentration of the first P+ doping region, the second P+ doping region, the first N+ doping region and the second N+ doping region is 1×10 respectively 18 /cm 3 ~6×10 18 /cm 3 。
Preferably, the first intrinsic I region and the second intrinsic I region are light absorbing materials having different light absorption bands. Since different materials correspond to different light absorption area ranges, the energy band structure of the materials is determined; for example, a typical silicon light absorption waveguide can only reach 1.1um and below, and light with the wavelength larger than 1.1um is not absorbed any more or is low in absorption efficiency in silicon materials; the germanium material can absorb light with the wavelength of 1.6um and below; however, germanium materials have lower absorption efficiency below 1um compared to silicon materials, so light below 1um is preferentially absorbed by silicon; light above 1um is preferentially absorbed by germanium detection. The configuration of different absorption wave bands in the first light absorption region and the second light absorption region can realize the detection of wide-spectrum optical signals.
Preferably, the first intrinsic I region is any one of the following light absorbing materials: germanium, germanium-silicon alloys, group iii-v materials or group iii-v material alloys; and/or, the second intrinsic I region is any one of the following light absorbing materials: silicon or perovskite.
Preferably, the base is SOI, formed by depositing silicon dioxide on a silicon substrate; and/or the material of the light transmission waveguide area is silicon nitride, aluminum nitride or lithium niobate.
The application also provides a preparation method of the photoelectric detector integrated with the double absorption areas, which comprises the following steps: (1) Depositing an insulating layer on a substrate to form a substrate, depositing a second absorption active region film on the insulating layer of the substrate, and photoetching and etching to form a ridge germanium waveguide structure; (2) Sequentially carrying out P++ doping, N++ doping, P+ doping and N+ doping on the ridge germanium waveguide structure to respectively form a second P++ doping region, a second N++ doping region, a second P+ doping region and a second N+ doping region, and reserving a second undoped intrinsic I region to form a second absorption active region; (3) Depositing an insulating layer and flattening, photoetching to form a window, and depositing a light transmission waveguide area material at a proper position to form a light transmission waveguide area; (4) Depositing an insulating layer, photoetching, and depositing a metal through hole material after etching to form a metal through hole; (5) Depositing a first absorption active region material, and forming a ridge-type silicon waveguide structure after photoetching and etching; (6) P++ doping, N++ doping, P+ doping and N+ doping are sequentially carried out on the ridge-type silicon waveguide structure to respectively form a first P++ doping region, a first N++ doping region, a first P+ doping region and a first N+ doping region, and a first undoped intrinsic I region is reserved to form a first absorption active region; (7) And photoetching a window, and depositing and forming a first metal electrode and a second metal electrode on the first P++ doped region and the second P++ doped region respectively.
The beneficial effects are that: in the photoelectric detector integrated with the double absorption regions, light passes through the light transmission waveguide region and is respectively coupled to the first light absorption region and the second light absorption region, and the broad spectrum optical signals can be detected due to the configuration of different absorption wave bands in the first light absorption region and the second light absorption region; because the active area structures of the first light absorption area and the second light absorption area are PNNPs, bias voltage is loaded between the two P through the first metal electrode and the second metal electrode, photo-generated carriers are extracted, and electric signals are generated.
The photoelectric detector can enable the first light absorption area and the second light absorption area to work independently through the positive and negative of the bias voltage (the working principle is shown in the abstract drawing in detail), and can realize integration. The working principle is as follows:
the photoelectric detector is in a structure formed by connecting 2 PIN and NIP in series through N connection; when a voltage is applied between 2P, 2 PN junctions will have to be one operating in forward bias and one in reverse bias (PN junction rationale); the detector can only extract photo-generated carriers to realize signal detection when working in a reverse bias state; for example, when the wavelength of the incident light is λ1, the first PIN junction is required to operate in reverse bias when coupled to the first light absorption region, and then the second PIN junction operates in forward bias (detection cannot be achieved); when the wavelength of incident light is λ2, the second PIN junction is required to operate in reverse bias (by adjusting voltage V B Realized), the first PIN junction will work forward biased (detection cannot be realized); and the first PIN junction reverse bias work and the second PIN junction reverse bias work are realized respectively, and only the voltage difference loaded between 2P types is required to be adjusted.
Drawings
FIG. 1 is a schematic diagram of a photodetector with integrated dual absorption regions according to the present application;
fig. 2 is a schematic diagram of the working principle of a photodetector integrated with a double absorption region.
Detailed Description
The present application will be described in detail with reference to the accompanying drawings.
The present embodiment provides a photodetector integrated with a double absorption region, including a substrate 1, a second absorption active region, an optical transmission waveguide region 2, and a first absorption active region, which are sequentially disposed from bottom to top.
The above base 1 is a silicon-on-insulator SOI formed by depositing silicon dioxide 102 on a silicon substrate 101;
the second absorption active region comprises a second p++ doped region 9, a second p+ doped region 10, an undoped second intrinsic I region 11, a second n+ doped region 12 and a second n++ doped region 13 which are transversely and sequentially arranged, and the second p++ doped region 9 is electrically connected with a second metal electrode 14; a portion of the second p+ doped region 10, the second intrinsic I region 11 and a portion of the second n+ doped region 12 form a second light absorbing region.
Wherein the doping concentration of the second P++ doped region 9 and the second N++ doped region 13 is 1×10 20 /cm 3 ~8×10 20 /cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentrations of the second p+ doped region 10 and the second n+ doped region 12 are 1×10 18 /cm 3 ~6×10 18 /cm 3 . The second intrinsic I region 11 is made of silicon material, and the width w2 is 50-500 nm.
The material of the light transmission waveguide region 2 is silicon nitride. In order to enable efficient optical coupling of the light transmission waveguide region 2 with the first light absorption region and the second light absorption region, the light transmission waveguide region 2 in this embodiment is further provided with a groove structure capable of adjusting the refractive index.
The first absorption active region comprises a first P++ doped region 3, a first P+ doped region 4, an undoped first intrinsic I region 5, a first N+ doped region 6 and a first N++ doped region 7 which are transversely and sequentially arranged, and the first P++ doped region 3 is electrically connected with a first metal electrode 8; part of the first p+ doped region 4, the first intrinsic I region 5 and part of the first n+ doped region 6 form a first light absorbing region.
Wherein the doping concentration of the first P++ doped region 3 and the first N++ doped region 7 is 1×10 20 /cm 3 ~8×10 20 /cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentrations of the first P+ doped region 4 and the first N+ doped region 6 are 1×10 18 /cm 3 ~6×10 18 /cm 3 . The first intrinsic I region 5 is made of germanium material, and the width w2 is 50-500 nm.
The first n++ doped region 7 and the second n++ doped region 13 are electrically connected through a metal via 15 therebetween.
The distance h1 between the light transmission waveguide region 2 and the first light absorption region is 50-400 nm; the distance h2 between the first light absorbing region and the second light absorbing region is 50-400 nm.
The working principle of the above-mentioned photoelectric detector integrated with the double absorption area is shown in fig. 2:
the photoelectric detector is formed by connecting 2 PIN and NIP in series through N connection; when a voltage is applied between 2P, 2 PN junctions will have to be one operating in forward bias and one in reverse bias (PN junction rationale); the detector can only extract photo-generated carriers to realize signal detection when working in a reverse bias state; for example, when the wavelength of the incident light is λ1, the first PIN junction is required to operate in reverse bias when coupled to the first light absorption region, and then the second PIN junction operates in forward bias (detection cannot be achieved); when the wavelength of the incident light is lambda 2, the second PIN junction is coupled to the second light absorption area and is required to work in reverse bias, and then the first PIN junction works in forward bias (detection cannot be realized); and the first PIN junction reverse bias work and the second PIN junction reverse bias work are realized respectively, and only the voltage difference loaded between 2P types is required to be adjusted.
The preparation method of the photoelectric detector integrated with the double absorption areas comprises the following steps:
(1) A high quality germanium film, i.e., a second absorption active region film, is prepared on a silicon-on-insulator (SOI) substrate 1 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method; photoetching a deposited germanium film region, and etching after pattern transfer to form a ridge germanium waveguide structure;
(2) P++ doping, N++ doping, P+ doping and N+ doping are sequentially carried out on the ridge-type germanium waveguide structure to respectively form a second P++ doping region 9, a second N++ doping region 13, a second P+ doping region 10 and a second N+ doping region 12, and undoped germanium intrinsic regions, namely a second intrinsic I region 11, are reserved to form a second absorption active region;
(3) Depositing a silicon dioxide material layer, and realizing planarization treatment by using a chemical mechanical polishing technology; photoetching a window, preparing a silicon nitride film material at a proper position by using a Low Pressure Chemical Vapor Deposition (LPCVD) method, etching a groove structure on the silicon nitride film material, and forming a light transmission waveguide region 2;
(4) Depositing a silicon dioxide material layer; depositing a metal through hole material after photoetching and etching to form a metal through hole 15;
(5) Preparing a polysilicon material, namely a first absorption active region material, by Plasma Enhanced Chemical Vapor Deposition (PECVD); photoetching a deposited polysilicon region, realizing etching after pattern transfer, and forming a ridge-type silicon waveguide structure;
(6) P++ doping, N++ doping, P+ doping and N+ doping are sequentially carried out on the ridge-type silicon waveguide structure to respectively form a first P++ doping region 3, a first N++ doping region 7, a first P+ doping region 4 and a first N+ doping region 6, and an undoped silicon intrinsic region structure, namely a first intrinsic I region 5 is reserved to form a first absorption active region;
(7) Photolithography opens a window to deposit a metal material on the first p++ doped region 3 and the second p++ doped region 9, respectively, to form a first metal electrode 8 and a second metal electrode 14.
The foregoing embodiments are merely illustrative of the technical concept and features of the present application, and are intended to enable those skilled in the art to understand the present application and to implement the same, not to limit the scope of the present application. All equivalent changes or modifications made according to the spirit of the present application should be included in the scope of the present application.
Claims (10)
1. The photoelectric detector integrated with the double absorption areas is characterized by comprising a substrate (1), a second absorption active area, an optical transmission waveguide area (2) and a first absorption active area which are sequentially arranged from bottom to top;
the first absorption active region comprises a first P++ doped region (3), a first P+ doped region (4), an undoped first intrinsic I region (5), a first N+ doped region (6) and a first N++ doped region (7) which are transversely and sequentially arranged, and the first P++ doped region (3) is electrically connected with a first metal electrode (8);
the second absorption active region comprises a second P++ doped region (9), a second P+ doped region (10), an undoped second intrinsic I region (11), a second N+ doped region (12) and a second N++ doped region (13) which are transversely and sequentially arranged, and the second P++ doped region (9) is electrically connected with a second metal electrode (14);
the first N++ doped region (7) and the second N++ doped region (13) are electrically connected through a metal through hole (15) between the first N++ doped region and the second N++ doped region;
the first intrinsic I region (5) and the second intrinsic I region (11) are light absorbing materials with different light absorption wave bands.
2. The integrated dual absorption zone photodetector according to claim 1, wherein a groove structure is provided in the middle of the light transmission waveguide zone (2).
3. The dual absorption region integrated photodetector according to claim 1, wherein the width w1 of the first intrinsic I region (5) is 50-500 nm;
and/or the width w2 of the second intrinsic I region (11) is 50-500 nm.
4. The dual absorption region integrated photodetector according to claim 1, wherein part of the first p+ doped region (4), the first intrinsic I region (5) and part of the first n+ doped region (6) form a first light absorption region; part of the second p+ doped region (10), the second intrinsic I region (11) and part of the second n+ doped region (12) form a second light absorbing region; the light-transmitting waveguide region (2) is located between the first light-absorbing region and the second light-absorbing region.
5. The dual absorption region integrated photodetector according to claim 4, wherein a distance h1 between the light transmission waveguide region (2) and the first light absorption region is 50-400 nm;
and/or the distance h2 between the light transmission waveguide region (2) and the second light absorption region is 50-400 nm.
6. The integrated dual absorption region photodetector according to claim 1, wherein the first p++ doped region (3), the second p++ doped region (9)The doping concentration of the first N++ doped region (7) and the second N++ doped region (13) is respectively 1×10 20 /cm 3 ~8×10 20 /cm 3 ；
And/or the doping concentration of the first P+ doping region (4), the second P+ doping region (10), the first N+ doping region (6) and the second N+ doping region (12) is respectively 1×10 18 /cm 3 ~6×10 18 /cm 3 。
7. The dual absorption region integrated photodetector according to any one of claims 1 to 6, wherein the first intrinsic I region (5) is any one of the following light absorbing materials: germanium, a germanium-silicon alloy, a group iii-v material, or a group iii-v material alloy.
8. The dual absorption region integrated photodetector according to any one of claims 1 to 6, wherein the second intrinsic I region (11) is any one of the following light absorbing materials: silicon or perovskite.
9. The integrated dual absorption region photodetector according to any one of claims 1 to 6, wherein the base (1) is a SOI (silicon on insulator) formed by depositing silicon dioxide (102) on a silicon substrate (101).
10. The integrated dual absorption region photodetector according to any one of claims 1 to 6, wherein the material of the light transmission waveguide region (2) is silicon nitride, aluminum nitride or lithium niobate.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655417A (en) * | 2016-02-29 | 2016-06-08 | 华为技术有限公司 | Optical waveguide detector and optical module |
| EP3038167A1 (en) * | 2014-12-22 | 2016-06-29 | IMEC vzw | Integrated avalanche germanium photodetector |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| WO2019218002A1 (en) * | 2018-05-14 | 2019-11-21 | The University Of Melbourne | A photodetector |
| CN110730917A (en) * | 2017-06-08 | 2020-01-24 | 卢克斯特拉有限公司 | Method and system for integrated photodetector with configured emission for bandwidth boosting and selective illumination of adaptive junction distribution |
| CN110911507A (en) * | 2019-11-19 | 2020-03-24 | 华中科技大学 | Perpendicular incidence type silicon-based germanium photoelectric detector based on medium super surface |
| CN110941108A (en) * | 2019-12-30 | 2020-03-31 | 杭州芯耘光电科技有限公司 | Doping structure and optical modulator |
| CN112201723A (en) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | Waveguide type photoelectric detector and preparation method thereof |
| CN112331744A (en) * | 2021-01-06 | 2021-02-05 | 武汉光谷信息光电子创新中心有限公司 | Preparation method of photoelectric detector |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7266263B2 (en) * | 2005-11-08 | 2007-09-04 | Massachusetts Institute Of Technology | Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods |
| US10957804B2 (en) * | 2009-08-18 | 2021-03-23 | The United States Of America As Represented By The Secretary Of The Army | Photodetector using resonance and related method |
| CN112652674B (en) * | 2019-10-11 | 2022-08-19 | 苏州旭创科技有限公司 | Waveguide type photoelectric detector |
-
2021
- 2021-12-30 CN CN202311261674.2A patent/CN117334777A/en active Pending
- 2021-12-30 CN CN202111647756.1A patent/CN114400267B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3038167A1 (en) * | 2014-12-22 | 2016-06-29 | IMEC vzw | Integrated avalanche germanium photodetector |
| CN105655417A (en) * | 2016-02-29 | 2016-06-08 | 华为技术有限公司 | Optical waveguide detector and optical module |
| CN110730917A (en) * | 2017-06-08 | 2020-01-24 | 卢克斯特拉有限公司 | Method and system for integrated photodetector with configured emission for bandwidth boosting and selective illumination of adaptive junction distribution |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| WO2019218002A1 (en) * | 2018-05-14 | 2019-11-21 | The University Of Melbourne | A photodetector |
| CN112201723A (en) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | Waveguide type photoelectric detector and preparation method thereof |
| CN110911507A (en) * | 2019-11-19 | 2020-03-24 | 华中科技大学 | Perpendicular incidence type silicon-based germanium photoelectric detector based on medium super surface |
| CN110941108A (en) * | 2019-12-30 | 2020-03-31 | 杭州芯耘光电科技有限公司 | Doping structure and optical modulator |
| CN112331744A (en) * | 2021-01-06 | 2021-02-05 | 武汉光谷信息光电子创新中心有限公司 | Preparation method of photoelectric detector |
Non-Patent Citations (2)
| Title |
|---|
| Demonstration of the use of a two-photon absorption waveguide detector as an autocorrelator;Laughton, F.R. et al.;《IEE Colloquium on `Measurements on Optical Devices》;全文 * |
| 光通信波段光探测器的暗电流抑制与宽谱高速及大功率响应特性的研究;马晓凯;《中国博士学位论文全文数据库 信息科技辑》;全文 * |
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