CN114395805B - Reaction cavity system and method for realizing AlGaN component modulation by same - Google Patents

Reaction cavity system and method for realizing AlGaN component modulation by same Download PDF

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CN114395805B
CN114395805B CN202210025979.2A CN202210025979A CN114395805B CN 114395805 B CN114395805 B CN 114395805B CN 202210025979 A CN202210025979 A CN 202210025979A CN 114395805 B CN114395805 B CN 114395805B
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laser
scanner
workpiece
rotating
algan
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CN114395805A (en
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黎大兵
张恩韬
孙晓娟
贲建伟
蒋科
张山丽
陈洋
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention discloses a reaction cavity system which comprises a reaction cavity body, a rotating system, a laser system and a control system. The rotating system, the laser system and the control system can be matched with each other, the control system receives the rotating speed information of the rotating system and controls the laser, the first scanner and the second scanner through the laser control module, so that the workpiece is exposed in a specific area. The system can realize the function of artificially setting temperature difference in the plane of the workpiece, thereby realizing the component modulation of AlGaN materials in the plane. The invention also discloses a method for realizing AlGaN component modulation by the reaction cavity system.

Description

Reaction cavity system and method for realizing AlGaN component modulation by same
Technical Field
The invention relates to the technical field of semiconductors, in particular to a reaction cavity system and a method for realizing AlGaN component modulation.
Background
Metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, abbreviated as MOCVD) is one of the most widely used methods for growing group III nitride films, and has atomic level interface control capability, and epitaxial growth is of high film quality, so it is commonly used for the growth of AlGaN-based semiconductor epitaxial films.
The AlGaN-based material is a direct wide band gap semiconductor, the band gap width is continuously adjustable between 3.4eV and 6.2eV along with the Al component, and the AlGaN-based material is an ideal material for preparing ultraviolet light electric devices. The AlGaN-based photoelectric device has extremely wide application prospect in the fields of illumination, sanitation, optical communication and the like. In the process of epitaxially growing the AlGaN-based device structure, the energy band design can be realized by adjusting the Al component, so that the carrier behavior of the device is modulated. However, the modulation of the components of the current technical means has only one dimension, i.e. modulation along the growth direction (perpendicular to the substrate surface), and cannot be performed in a direction parallel to the substrate surface. This will limit further improvements in device performance and limit the design of new AlGaN-based device structures.
Disclosure of Invention
The invention aims to overcome the defects existing in the prior art, and adopts the following technical scheme:
in one aspect, the present invention provides a reaction chamber system for achieving in-plane AlGaN composition modulation, comprising: the device comprises a reaction cavity body, a rotating system, a laser system and a control system.
The rotating system is arranged on the bottom surface of the reaction cavity body, outputs a rotating speed signal and can drive the workpiece to rotate;
the laser system sets up the upper portion of reaction chamber body, controls through laser control module, and it includes:
a laser disposed at an upper portion of the laser system;
the first scanner can rotate along the horizontal direction or the vertical direction under the control of the laser control module to reflect the laser of the laser;
the second scanner can rotate along the horizontal or vertical direction under the control of the laser control module to receive the laser reflected by the first scanner, reflect the laser again and transmit the laser to a set position;
the control system receives the rotating speed information and controls the laser, the first scanner and the second scanner through the control of the laser control module, so that the workpiece is exposed in a specific area.
In some embodiments, the laser system further comprises: the mask plate is arranged in the emergent area of the laser and used for controlling the shape of laser.
In some embodiments, the laser system further comprises: a first focusing lens and a second focusing lens,
the first focusing lens is arranged between the laser and the first scanner;
the second focusing lens is disposed between the second scanner and the workpiece.
In some embodiments, the first scanner is comprised of two parallel and oppositely disposed planar mirrors that are rotatable in either the horizontal or vertical directions simultaneously.
In some embodiments, the second scanner is comprised of two parallel and oppositely disposed planar mirrors that can be rotated in either the horizontal or vertical directions simultaneously.
In some embodiments, the rotation system includes a graphite tray that is rotatable at high speed.
In some embodiments, the rotational speed of the rotating system is adjustable between 0-1500 rpm.
In some embodiments, the control system achieves exposure of the workpiece in a particular area by controlling the strobe of the laser and the angles of the first and second scanners.
In some embodiments, the control system controls the angle of the first scanner and the second scanner by switching and strobing the laser through a laser control module to expose the workpiece to light in a specific area.
On the other hand, the invention also provides a method for realizing in-plane AlGaN component modulation by using the reaction cavity system, which comprises the following steps:
s1, placing a workpiece on a rotating system, and controlling the rotating system to rotate;
s2, the control system receives the rotating speed information of the rotating system, and after the rotating speed information reaches a preset interval, the laser control module is controlled to adjust the switch and stroboscopic of the laser and the angles of the first scanner and the second scanner;
s3, the control system tracks the workpiece by controlling the angles of the first scanner and the second scanner, and exposes the workpiece in a specific area by combining the stroboscopic effect of the laser, so that the AlGaN component modulation is finally realized.
According to the reaction cavity system and the method for realizing in-plane AlGaN component modulation through the reaction cavity, the control system receives the rotating speed information, and controls the laser, the first scanner and the second scanner through the control of the laser control module, so that the workpiece is exposed in a specific area, al component modulation of an AlGaN-based material epitaxial wafer can be realized in the directions of being vertical and parallel to the surface of the substrate, and therefore AlGaN components can be regulated and controlled in a three-dimensional mode, and carrier behaviors of a prepared device can be regulated and controlled in a three-dimensional mode, and new possibility is provided for structural design of the AlGaN-based device.
Drawings
FIG. 1 is a schematic view of a reaction chamber system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a laser system according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the operation of a reaction chamber system according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for realizing in-plane AlGaN composition modulation by a reaction chamber system according to an embodiment of the invention.
Reference numerals related to the embodiments of the present invention are as follows:
a reaction chamber system 100; a reaction chamber body 10; a rotation system 20; a laser system 30;
a laser 301; a first scanner 302; a second scanner 303; a mask 304;
a first focusing lens 305; a second focusing lens 306; a control system 40; a workpiece 200.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be understood that, for the convenience of description and simplification of the description, it is not necessary to indicate or imply that the apparatus or elements referred to have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention, it is that the relation of orientation or position indicated as "upper" is based on the orientation or position relation shown in the drawings, or the orientation or position relation that is conventionally put when the inventive product is used, or the orientation or position relation that is conventionally understood by those skilled in the art.
Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
The following describes specific embodiments of the present invention in detail with reference to the drawings.
Regarding epitaxial growth of AlGaN, current technical means have only one dimension of modulation of Al composition, i.e., modulation along the growth direction (perpendicular to the substrate surface), and no modulation in the direction parallel to the substrate surface. This will limit further improvements in device performance and limit the design of new AlGaN-based device structures.
Therefore, in order to realize that the Al component is not only changed along the direction vertical to the substrate in the process of epitaxially growing AlGaN in MOCVD, but also the Al component can be designed in the direction parallel to the substrate, the invention provides a laser-regulated MOCVD reaction chamber. By using the reaction chamber and the method provided by the embodiment of the invention, the Al component modulation of the AlGaN-based material epitaxial wafer can be realized in the directions of being vertical and parallel to the surface of the substrate, so that the AlGaN component can be regulated and controlled in three dimensions, the carrier behavior of the prepared device can be regulated and controlled in three dimensions, and new possibility is provided for the structural design of the AlGaN-based device.
The invention mainly aims to design an MOCVD reaction cavity system for realizing Al component regulation of an AlGaN epitaxial layer by laser irradiation, and the reaction cavity system can realize Al component regulation of the MOCVD growth AlGaN epitaxial layer in the direction parallel to the surface of a substrate. The basic principle of regulating and controlling the Al component in the AlGaN epitaxial layer plane by utilizing the laser is that the Al atoms and Ga atoms are different in incorporation rate at different temperatures, so that the temperature of different micro areas of the substrate is changed by utilizing the patterned laser, the Al component of the epitaxial layer with laser pattern irradiation is high, the Al component of the area without the laser irradiation is low, and the Al component in the plane is distributed according to the design.
Referring to FIGS. 1-3, a reaction chamber system 100 is provided in accordance with an embodiment of the present invention.
The reaction chamber system 100 is configured to implement in-plane AlGaN component modulation, and includes: a reaction chamber body 10, a rotation system 20, a laser system 30, and a control system 40.
The rotating system 20 is arranged on the bottom surface of the reaction chamber body 10, outputs a rotating speed signal, and can drive the workpiece 200 to rotate;
the laser system 30 is disposed at the upper portion of the reaction chamber body 10, and is controlled by a laser control module, and includes:
a laser 301 disposed at an upper portion of the laser system 30;
the first scanner 302 can rotate along the horizontal or vertical direction under the control of the laser control module to reflect the laser light of the laser 301;
the second scanner 303 can rotate along the horizontal or vertical direction under the control of the laser control module to receive the laser reflected by the first scanner 302 and reflect the laser to a set position again;
the control system 40 receives the rotation speed information, and controls the laser 301, the first scanner 302 and the second scanner 303 through a laser control module to expose the workpiece 200 in a specific area.
The first scanner 302 and the second scanner 303 are matched with the strobing of laser under the control of the control system 40, so that the tracking of the sample is realized when laser illumination exists, and the resetting is realized when no laser illumination exists. The strobe frequency selection of the laser is determined according to the laser power, the material generation/cooling speed, the rotating disk rotating speed and the like, mainly considering the time that the laser needs to stay on the sample for single irradiation, and according to the requirement of temperature control, the rotating system 20 can be selected to rotate for one circle, and the sample of the workpiece 200 is irradiated for one cycle or two cycles.
In the running process of the equipment, after the growth formally starts, after the speed of the rotating system 20 is stable, the rotating speed information of the rotating system 20 can be transmitted to the control system 40 through the real-time monitoring system, and meanwhile, the flicker frequency and the power of the two groups of lasers 301 and the movement of the two groups of scanners are controlled by the control system 40.
In some embodiments, the control system 40 controls the angle of the first and second scanners to expose the workpiece to a specific area by switching and strobing the laser through a laser control module.
In some embodiments, the laser 301 may be configured to emit vertically downward at a fixed angle to facilitate control of the overall laser system 30.
It will be appreciated that the laser direction of the laser 301 may also be set to be adjustable, for example, the laser system 30 may be installed by adjusting the installation angle of the laser 301, so as to adapt to different scene requirements, for example, where the laser direction needs to be adjusted. The angle adjusting means may be a hinge.
It is understood that the workpiece 200 may be an AlGaN epitaxial growth substrate.
In some embodiments, the laser system 30 further comprises: the mask plate 304, the mask plate 304 is disposed in the emergent region of the laser 301, and is used for controlling the shape of the laser.
In some embodiments, the laser system 30 further comprises: a first focusing lens 305 and a second focusing lens 306,
the first focusing lens 305 is disposed between the laser 301 and the first scanner 302;
the second focusing lens 306 is disposed between the second scanner 303 and the workpiece 200.
In some embodiments, the first scanner 302 is formed of two parallel and oppositely disposed planar mirrors that can be rotated in either the horizontal or vertical directions simultaneously.
In some embodiments, the second scanner 303 is formed of two parallel and oppositely disposed planar mirrors, which can be rotated in the horizontal or vertical direction at the same time.
The optical path operation principle of the laser system 30 of this embodiment is as follows: after the laser system 30 is operated, laser light is emitted from the emitting area of the laser 301, is controlled to be in a specific laser shape by the mask plate 304, is focused by the first focusing lens 305, reaches one of the plane mirrors of the first scanner 302, is reflected by the other plane mirror of the first scanner 302, reaches one of the plane mirrors of the second scanner 303, is reflected by the other plane mirror of the second scanner 303, and is incident to the second focusing lens 306, and is focused on the workpiece 200 by the second focusing lens 306.
During operation of the laser light path, the laser 301 is normally incident to the first focusing lens 305. The first scanner 302 and the second scanner 303 can rotate along the horizontal or vertical direction to reach the predetermined position of the incident angle.
In some embodiments, the first focusing lens 305 is disposed parallel to the second focusing lens 306 and is concentric in a vertical direction.
In some embodiments, the first focusing lens 305 and the second focusing lens 306 are both convex lenses, and the parameters of both are consistent.
In some embodiments, the rotation system 20 includes a graphite tray that is rotatable at high speeds. The rotation system 20 may include, in particular, a magnetic fluid, a rotation shaft, and a graphite tray. The graphite tray realizes sealed rotation through magnetic fluid, takes a rotating shaft as a connecting mechanism, forms non-rigid connection through the shaft and friction force, and realizes stable high-speed rotation of the graphite tray.
In some embodiments, the rotational speed of the rotary system 20 is adjustable between 0-1500 rpm.
In some embodiments, the control system 40 controls the laser system 30 by controlling the strobe of the laser 301.
In some embodiments, the reaction chamber system may be one of a magnetron sputtering reaction chamber system, a molecular beam epitaxy reaction chamber system, and the like, in addition to the MOCVD reaction chamber system.
On the other hand, referring to fig. 4, the present invention also provides a method for realizing in-plane AlGaN component modulation by using the reaction chamber system, which comprises the following steps:
s1, placing a workpiece on a rotating system, and controlling the rotating system to rotate;
s2, the control system receives the rotating speed information of the rotating system, and after the rotating speed information reaches a preset interval, the laser control module is controlled to adjust and adjust the switch and stroboscopic frequency of the laser and the angles of the first scanner and the second scanner;
s3, the control system tracks the workpiece by controlling the angles of the first scanner and the second scanner, and exposes the workpiece in a specific area by combining the stroboscopic effect of the laser, so that the AlGaN component modulation is finally realized.
According to the reaction cavity system and the method for realizing in-plane AlGaN component modulation through the reaction cavity, the control system receives rotation speed information of the rotation system, and the laser and the first scanner and the second scanner are controlled through the laser control module, so that laser tracking irradiation on the surface of an AlGaN material in the epitaxial growth process is realized, the aim of local regulation and control of the surface temperature of a sample is achieved, and the Al component in an in-plane AlGaN epitaxial layer can be changed according to requirements by utilizing the difference of the incorporation rates of Al atoms and Ga atoms at different temperatures. Therefore, the Al component modulation of the AlGaN-based material epitaxial wafer can be realized in the directions of being vertical and parallel to the surface of the substrate, so that the AlGaN component can be regulated and controlled in three dimensions, the carrier behavior of the prepared device can be regulated and controlled in three dimensions, and new possibility is provided for the structural design of the AlGaN-based device.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. .
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
The above-described embodiments of the present invention do not limit the scope of the present invention. Any of various other corresponding changes and modifications made according to the technical idea of the present invention should be included in the scope of the claims of the present invention.

Claims (5)

1. A reaction chamber system for achieving in-plane AlGaN composition modulation, comprising:
a reaction cavity body, wherein the reaction cavity body is provided with a plurality of grooves,
the rotating system is arranged on the bottom surface of the reaction cavity body, drives the workpiece to rotate and can output a rotating speed signal;
the laser system sets up the upper portion of reaction chamber body, controls through laser control module, and it includes:
a laser disposed at an upper portion of the laser system;
the first scanner can rotate along the horizontal direction or the vertical direction under the control of the laser control module to reflect the laser of the laser;
the second scanner can rotate along the horizontal or vertical direction under the control of the laser control module to receive the laser reflected by the first scanner for re-reflection to a set position;
the control system receives the rotating speed signal, and controls the laser, the first scanner and the second scanner through the laser control module to enable the workpiece to be exposed in a specific area;
the laser system further comprises: the mask plate is arranged in the emergent area of the laser and is used for controlling the shape of laser;
the laser system further comprises: a first focusing lens and a second focusing lens,
the first focusing lens is arranged between the laser and the first scanner;
the second focusing lens is arranged between the second scanner and the workpiece;
the first scanner is composed of two parallel plane reflectors which are oppositely arranged, and the two reflectors can rotate along the horizontal or vertical direction at the same time;
the second scanner is composed of two parallel plane reflectors which are oppositely arranged, and the two reflectors can rotate along the horizontal or vertical direction at the same time;
the control system controls the angles of the first scanner and the second scanner through the laser control module to switch and strobe the laser, so that the workpiece is exposed in a specific area.
2. The reactor system of claim 1, wherein the rotation system comprises a graphite tray that is rotatable at high speed.
3. The reaction chamber system of claim 1, wherein the rotational speed of the rotating system is adjustable between 0-1500 rpm.
4. The reactor system of claim 1 wherein said control system tracks the workpieces on the rotating tray during growth by controlling the strobe of the laser and the angle of the scanner.
5. A method of using the reaction chamber system of any one of claims 1-4 to achieve in-plane AlGaN composition modulation comprising the steps of:
s1, placing a workpiece on a rotating system, and controlling the rotating system to rotate;
s2, the control system receives a rotating speed signal of the rotating system, and after the rotating speed signal reaches a preset interval, the laser control module is controlled to adjust the switch and stroboscopic of the laser and the angles of the first scanner and the second scanner;
s3, the control system tracks the workpiece by controlling the angles of the first scanner and the second scanner, and exposes the workpiece in a specific area by combining laser stroboscopic to realize AlGaN component modulation.
CN202210025979.2A 2022-01-11 2022-01-11 Reaction cavity system and method for realizing AlGaN component modulation by same Active CN114395805B (en)

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JP2010180081A (en) * 2009-02-04 2010-08-19 Sumitomo Electric Ind Ltd GaN SUBSTRATE, PRODUCTION METHOD THEREOF, PRODUCTION METHOD OF GaN LAYER-BONDED SUBSTRATE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
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