CN114360760A - Conductive powder, thick-film silver-aluminum paste, and preparation method and application thereof - Google Patents
Conductive powder, thick-film silver-aluminum paste, and preparation method and application thereof Download PDFInfo
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- CN114360760A CN114360760A CN202111669447.4A CN202111669447A CN114360760A CN 114360760 A CN114360760 A CN 114360760A CN 202111669447 A CN202111669447 A CN 202111669447A CN 114360760 A CN114360760 A CN 114360760A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0036—Details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to H01B1, in particular to conductive powder, thick-film silver-aluminum paste, and a preparation method and application thereof. The silver-aluminum phase can be promoted to be quickly formed in the silver-aluminum paste sintering process by introducing the silver-aluminum powder or the silver-coated aluminum powder into the silver-aluminum paste and controlling the actual aluminum consumption and the particle sizes of the silver powder and the silver-aluminum powder. The silver-aluminum powder or silver-coated aluminum powder provided by the invention can be used in front-side silver paste, the uniform distribution of aluminum metal in the paste is improved, the metal-semiconductor contact performance of the silver-aluminum paste and a P + layer of a crystalline silicon solar cell is optimized, the metal induced recombination is reduced, the open-circuit voltage of the solar cell is improved, and the photoelectric conversion efficiency of an N-type or P-type TOPCon crystalline silicon solar cell is improved.
Description
Technical Field
The invention relates to H01B1, in particular to conductive powder, thick-film silver-aluminum paste, and a preparation method and application thereof.
Background
Solar power generation is one of the most promising energy utilization technologies in the future world as a novel power generation technology which is clean, environment-friendly, safe, reliable, rich in resources and wide in application field, and the industrialization conversion efficiency of the solar cell is improved from 17% to 23% along with the development of the crystalline silicon solar cell in nearly ten years at present. And the rapid development of the solar photovoltaic silver paste mainly depends on the technical development of the photovoltaic silver paste. But limited by the technical bottleneck problem of P-type back passivated local contact cells (PERC cells), N-type cells become the core of future technology development.
In order to obtain a high-performance N-type crystalline silicon solar cell, currently, aluminum-containing metal powder is often added on high-conductivity silver powder, and ohmic contact is improved by using aluminum powder, but the high-activity aluminum powder can be sputtered out of a surface alumina shell under high-temperature sintering, a p + doped layer at the bottom of a silicon sediment is quickly dissolved, so that an obvious aluminum pinning effect is formed, high metal induction is caused, the photocarrier recombination speed is too high, the open-circuit voltage and the filling factor of the cell are obviously reduced, the conversion efficiency of the solar cell is obviously reduced, and the performance of the solar cell is influenced.
At present, the common method is to add other metals to reduce the damage of aluminum to the pn junction formed in the system silicon substrate, for example, in the patent CN 108701504 a disclosed by the japan nano-american company, alloy powder of Al and Zn, Cu, Ni, Au, Zn or Sn is added, but the addition of new metal elements also has a large negative effect on the resistance of the silver layer, it is difficult to achieve effective reduction of the aluminum pinning effect and reduction of the metal induced recombination speed, and it is impossible to ensure that the TOPCon crystalline silicon solar cell has low contact resistivity and proper open voltage.
Disclosure of Invention
In order to solve the above problems, the first aspect of the present invention provides a conductive powder for thick film silver-aluminum paste, the conductive powder being prepared from the following raw materials:
(A) silver powder; the silver powder accounts for 83.0-91.0 wt% of the thick film silver-aluminum paste, and can be enumerated by 83 wt%, 84 wt%, 85 wt%, 86 wt%, 87 wt%, 88 wt%, 89 wt%, 90 wt%, 91 wt%, and preferably 84.0-90.0 wt%;
the silver powder has a D50 particle size of 0.5 to 5.0 μm, for example, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, preferably 0.8 to 3.0 μm, more preferably 1.0 to 2.0 μm; the D50 particle size can be obtained by testing with a laser particle size distribution instrument.
The specific surface area of the silver powder is 0.3-5.0 m2Per g, there may be enumerated, 0.3m2/g、0.4m2/g、0.5m2/g、1m2/g、2m2/g、3m2/g、4m2/g、5m2A preferred range is 0.3 to 3.0m2The specific surface area is obtained by testing according to a BET specific surface area test method;
the tap density of the silver powder is 0.5-7.0 g/cm3There may be mentioned, for example, 0.5g/cm3、1g/cm3、2g/cm3、3g/cm3、4g/cm3、5g/cm3、6g/cm3、7g/cm3Preferably 3.0 to 6.5g/cm3More preferably 4.0 to 6.0g/cm3。
The silver powder is spherical or quasi-spherical, and is not particularly limited, wherein the silver powder can be pure silver powder, or can comprise an organic coating agent, such as organic acid, organic amine and the like, and the organic coating agent only needs to account for less than 2 wt% of the silver powder, such as 0.1-2 wt%, and is not particularly limited, and the organic coating agent is an organic coating agent well known in the art, such as lauric acid, castor oil fatty acid, oleic acid, palmitic acid, triethanolamine and hexadecylamine.
(B) Silver-aluminum powder; the silver-aluminum powder accounts for 0.1-10.0 wt% of the thick-film silver-aluminum paste, and can be enumerated by 0.1 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt% and 10 wt%.
The silver-aluminum powder meets the following conditions:
(1) the silver-aluminum powder is silver-coated aluminum powder and/or silver-aluminum alloy powder; the silver-aluminum powder can be added in the form of silver-coated aluminum or silver-aluminum alloy, and can be prepared by a method well known in the art, the preparation method of the silver-coated aluminum powder comprises but is not limited to one of chemical plating, electroplating and vacuum evaporation processes, the preparation method of the silver-aluminum alloy powder comprises but is not limited to one of nitrogen atomization process, electric explosion process and vacuum sputtering process, the silver-aluminum powder can comprise an organic coating agent, and can also not comprise the organic coating agent, wherein the organic coating agent accounts for less than 2 wt% of the silver-aluminum powder.
(2) The silver-aluminum powder has a D50 particle size of 0.5-5.0 μm, which may be 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, preferably 0.8-3.0 μm;
(3) the aluminum in the silver-aluminum powder accounts for 40-90 wt% of the silver-aluminum powder, and 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt% and 90 wt% can be enumerated.
When the conductive powder is used for a front electrode, a silver-aluminum phase structure can be formed by adding a certain amount of aluminum, so that the contact with a p + doped layer is promoted, and a low-ohmic contact point is formed.
The silver-aluminum powder also meets the following conditions:
(4) the specific surface area of the silver-aluminum powder is 0.4-5.0 m2Per g, there may be enumerated, 0.4m2/g、0.5m2/g、1m2/g、2m2/g、3m2/g、4m2/g、5m2A ratio of 0.4 to 3.0 m/g is preferred2A ratio of 0.4 to 1 m/g is preferred2/g；
(5) The tap density of the silver-aluminum powder is 0.5-5.0 g/cm3Can be enumerated by，0.5g/cm3、1g/cm3、2g/cm3、3g/cm3、4g/cm3、5g/cm3、6g/cm3、7g/cm3Preferably 1.0 to 5.0g/cm3More preferably 2.0 to 5.0g/cm3。
In addition, in order to increase the contact area between the silver powder and the silver-aluminum powder and promote the formation of a silver-aluminum phase in the sintering process, the inventor finds that the surface performance of the silver-aluminum powder needs to be controlled, and the inventor also finds that when the specific surface area of the silver-aluminum powder is too large, the contact between the silver powder and the silver-aluminum powder is facilitated, but the silver-aluminum phase is difficult to uniformly disperse in the sintering process to form high-density contact points, and meanwhile, the problems of partial erosion and dissolution of a p + doped layer can be caused, so that the metal induction is increased, the recombination speed of a photon-generated carrier is too high, and the improvement of the conversion efficiency of the solar cell is influenced.
The second aspect of the invention provides a thick film silver-aluminum paste, which comprises the following raw materials in percentage by weight: the conductive powder, 1.0-6.0 wt% of glass powder and 3.0-14.0 wt% of organic carrier.
As a preferred technical scheme of the invention, the glass powder comprises PbO and Al as components2O3、B2O3、Bi2O3At least one of (1). The glass powder can be PbO or Al2O3、B2O3、Bi2O3The binary, ternary and quaternary glass powder can also comprise other raw materials, such as TeO2、WO3、Sb2O3、V2O5、ZnO、BaO、CaO、AgO、Tl2O3、SiO2And the like, but not specifically limited, the glass powder can be generally obtained by preparing raw materials and the like through high-temperature smelting, quenching and ball milling processes at 800-1300 ℃, and is not specifically limited.
As an example of the glass frit, there may be mentioned a glass frit composed of, in weight percent: 30-90 wt% PbO, 0.1-c10wt％Al2O3、2～25wt％B2O3、0～10wt％SiO2、0～10wt％ZnO、0～50wt％Bi2O3、0～8wt％Li2O、0～10wt％ZnO、0～5wt％TeO2、0～3wt％WO3、0～10wt％Tl2O3、0～3wt％CaO、0～3wt％BaO、0～5wt％Sb2O30 to 6 wt% of AgO and 0 to 5 wt% of V2O5。
In order to match with the conductive powder, the particle size and the dosage of the glass powder in the silver paste are controlled, the dosage of the glass powder cannot be too much, and when the dosage of the glass powder is too much, the formation of a high-ohmic contact point is influenced, so that the resistance is increased, and as a preferable technical scheme of the invention, the D50 particle size of the glass powder is 0.5-3 mu m, for example, 0.5 mu m, 1 mu m, 2 mu m and 3 mu m, and the tap density is 1-4 g/cm3There may be mentioned, for example, 1g/cm3、2g/cm3、3g/cm3、4g/cm3The silver paste accounts for 1.0-6.0 wt%, and may be 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, preferably 2-5 wt%, more preferably 2.5-3.5 wt%.
The organic carrier is mainly used for wetting conductive powder and glass powder during printing and serving as an organic binder to promote adhesion and sintering among the powder, and as a preferable technical scheme of the invention, the organic carrier comprises a solvent and resin, and the weight ratio is (3-12): (0.1-2).
Examples of the resin include, but are not limited to, cellulose and derivatives thereof, such as hydroxyethyl cellulose, hydroxypropyl cellulose and hydroxyethyl hydroxypropyl cellulose, ethyl cellulose EC, cellulose acetate butyrate CAB, polyvinyl butyral, polyethylene glycol, polyethylene oxide, polyvinyl pyrrolidone acrylic resin, polyvinyl alcohol, acrylic monomer, urea formaldehyde resin, melamine formaldehyde resin. In one embodiment, the resin comprises 0.1 to 2 wt% of the silver-aluminum paste, and may be, for example, 0.1 wt%, 0.5 wt%, 1 wt%, 1.2 wt%, 1.5 wt%, 1.8 wt%, 2 wt%.
Examples of the solvent include, but are not limited to, ether solvents, which may be exemplified by diethylene glycol butyl ether, ethylene glycol phenyl ether, diethylene glycol diethyl ether, ester solvents, which may be exemplified by 2,2, 4-trimethyl-1, 3-pentanediol monoisobutyrate, diethylene glycol butyl ether acetate, alcohol ester dodeca, adipic acid dimethyl ester, diacetin; examples of the alcohol solvent include terpineol and ethylene glycol. In one embodiment, the solvent comprises 3 to 12 wt% of the silver-aluminum paste, and may be, for example, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, and preferably 4 to 9 wt%.
As a preferable technical scheme of the invention, the raw materials for preparing the silver-aluminum paste further comprise one or more of a leveling agent, a wetting dispersant, a metal assistant, a nonmetal assistant and a thixotropic agent.
Examples of the leveling agent include, but are not limited to, acrylate leveling agents, polyurethane leveling agents, silicone leveling agents such as silicone oil, polydimethylsiloxane, polyether polyester modified organosiloxane, alkyl modified organosiloxane, and in one embodiment, the leveling agent accounts for 0.1 to 1.2 wt%, preferably 0.2 to 0.6 wt%, and more preferably 0.3 to 0.5 wt% of the silver paste.
Examples of wetting dispersants include, but are not limited to, oleic acid, erucic acid, tallow with fatty acid groups, sodium lauryl sulfate, erucic acid amide, oleic acid amide, and in one embodiment, the wetting dispersant comprises 0.1 to 1.0 wt%, preferably 0.3 to 0.7 wt%, and more preferably 0.4 to 0.6 wt% of the silver paste.
Examples of the metal auxiliary agent include, but are not limited to, 5 to 50nm ruthenium oxide, 5 to 100nm zinc oxide, 0.5 to 3um aluminum powder, 0.5 to 3 μm indium powder, and 10 to 100nm nano silver powder, and in one embodiment, the metal auxiliary agent accounts for 0 to 1 wt%, preferably 0.2 to 0.8 wt%, and more preferably 0.3 to 0.5 wt% of the silver paste. Wherein the particle size of the metal additive is D50 particle size.
Examples of the non-metal additive include, but are not limited to, 5 to 30nm fumed silica, 0.5 to 3 μm boron powder, and in one embodiment, the non-metal additive accounts for 0 to 1 wt%, preferably 0.2 to 0.8 wt%, and more preferably 0.3 to 0.5 wt% of the silver paste. Wherein the particle size of the nonmetal auxiliary agent is D50 particle size.
Examples of thixotropic agents include, but are not limited to, modified hydrogenated castor oil, polyamide wax polyamide modified hydrogenated castor oil, Ethylene Bis Stearamide (EBS), which in one embodiment comprises 0.05 to 1 wt%, preferably 0.2 to 0.6 wt%, more preferably 0.3 to 0.5 wt% of the silver paste.
The third aspect of the invention provides a preparation method of the thick-film silver-aluminum paste, which comprises the following steps: and mixing, grinding and filtering the preparation raw materials of the silver-aluminum paste to obtain the thick-film silver-aluminum paste.
As a preferred technical solution of the present invention, the preparation method of the thick film silver-aluminum paste comprises:
mixing a solvent, resin and a thixotropic agent, mixing with other preparation raw materials of the silver-aluminum paste, grinding and filtering to obtain the silver-aluminum paste. Wherein, the grinding can be controlled by a three-roller grinder and the like, the fineness of the ground slurry is controlled to be below 20 mu m, and the filtering can be performed by a 200-500-mesh screen to obtain the finished slurry with uniform granularity and no paillettes.
The fourth aspect of the invention provides an application of the thick-film silver-aluminum paste, which is used for an N-type TOPCon crystalline silicon solar cell or a P-type TOPCon crystalline silicon solar cell.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention provides a conductive powder, which can reduce contact resistance and promote the exertion of electrical performance by introducing aluminum into silver powder with high conductive performance to form a high-ohmic contact point.
(2) Through the quantity of aluminium in the control silver aluminium to control the particle diameter of silver powder and silver-aluminium powder, can promote silver aluminium looks quick formation in the silver thick liquid sintering in, reduce the erosion and the formation of aluminium pinning to the doping layer, battery open circuit voltage and fill factor increase in ancient times and modern times.
(3) And by controlling the specific surface area and the tap density of the silver-aluminum powder, the dispersion of the silver-aluminum powder and the distribution density of contact points of the silver-aluminum powder can be further improved, the problems of aluminum sputtering and the like are reduced, and high photoelectric conversion efficiency is realized.
(4) The silver-aluminum powder provided by the invention can be used in front-side silver paste, the uniform distribution of aluminum metal in the paste is improved, the metal-semiconductor contact performance of the silver-aluminum paste and a P + layer of a crystalline silicon solar cell is optimized, the metal induced recombination is reduced, the open-circuit voltage of the solar cell is improved, and the photoelectric conversion efficiency of an N-type or P-type TOPCon crystalline silicon solar cell is improved.
Detailed Description
Examples
The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
Examples 1 to 8 provide a conductive powder
The raw materials for preparing the conductive powder provided in examples 1 to 8, in terms of weight percentage of the silver-aluminum paste, are shown in table 1:
TABLE 1
The parameters of the silver powder and the silver-aluminum powder in examples 1 to 8 are shown in Table 2.
TABLE 2
Examples 1 to 8 also provide silver-aluminum pastes including the conductive powders as described above, and reference examples 1 to 4 provide pastes including aluminum
Silver-aluminum paste of powder
The raw materials for preparing the silver-aluminum pastes provided in examples 1 to 8 and reference examples 1 to 4 are shown in table 3 in terms of weight percentage.
TABLE 3
Wherein the specific surface area of the powdery aluminum in examples 1 to 8 and reference examples 1 to 4 was 0.86m2G, D50 particle diameter of 1.0 μm, tap density of 3.0g/cm3。
The preparation raw materials of the organic vehicle (i) in examples 1 to 8 and reference examples 1 to 4 are shown in table 4 in terms of the weight percentage of the silver-aluminum paste.
TABLE 4
The raw materials for preparing the glass frit in examples 1 to 8 and reference examples 1 to 4 in parts by weight are shown in table 5. The glass powder I is prepared by smelting, quenching and ball milling, the D50 particle size of the glass powder I is 0.86 mu m, and the tap density is 3.6g/cm3。
TABLE 5
| Glass powder | |
| PbO | 47.2 |
| Al2O3 | 3.0 |
| B2O3 | 30.0 |
| SiO2 | 2.0 |
| ZnO | 0.5 |
| Bi2O3 | 15.0 |
| Li2O | 1.0 |
| TeO2+WO3+Sb2O3+V2O5 | 0.5 |
| BaO+CaO+AgO | 0.8 |
Evaluation of Performance
The silver-aluminum paste provided in examples 1 to 8 and reference examples 1 to 4 was printed on an N-type TOPCon crystal silicon substrate, dried to have a film thickness of 15 μm, and sintered at 750 to 760 ℃, and the obtained battery pieces were subjected to current-voltage performance tests, and the results are shown in Table 6.
TABLE 6
According to the test results, the conductive powder provided by the invention can be used in silver-aluminum paste, the aluminum pinning effect caused by adding aluminum is obviously improved, the open-circuit voltage is increased, the series resistance and the contact resistivity are reduced, and the silicon crystal solar cell with high conversion efficiency is obtained.
Claims (10)
1. The conductive powder for the thick-film silver-aluminum paste is characterized by comprising the following raw materials:
(A) silver powder; the silver powder accounts for 83.0-91.0 wt% of the thick film silver-aluminum paste;
(B) silver-aluminum powder; the silver-aluminum powder accounts for 0.1-10.0 wt% of the thick-film silver-aluminum paste;
the particle size of D50 of the silver powder is 0.5-5.0 mu m;
the silver-aluminum powder meets the following conditions:
(1) the silver-aluminum powder is silver-coated aluminum powder and/or silver-aluminum alloy powder;
(2) the D50 particle size of the silver-aluminum powder is 0.5-5.0 mu m;
(3) the aluminum in the silver-aluminum powder accounts for 40-90 wt% of the silver-aluminum powder.
2. The conductive powder for thick-film silver-aluminum paste according to claim 1, wherein the silver-aluminum powder further satisfies the following conditions:
(4) the specific surface area of the silver-aluminum powder is 0.4-5.0 m2/g；
(5) The tap density of the silver-aluminum powder is 0.5-5.0 g/cm3。
3. The conductive powder for thick-film silver-aluminum paste according to claim 1 or 2, wherein the silver powder has a specific surface area of 0.3 to 5.0m2The tap density of the silver powder is 0.5-7.0 g/cm3。
4. The thick-film silver-aluminum paste is characterized by comprising the following raw materials in percentage by weight: the conductive powder according to any one of claims 1 to 3, 1.0 to 6.0 wt% of glass frit, and 3.0 to 14.0 wt% of an organic vehicle.
5. The thick film silver aluminum paste of claim 4, wherein saidThe glass powder comprises PbO and Al2O3、B2O3、Bi2O3At least one of; preferably, the components of the glass powder also comprise TeO2、WO3、Sb2O3、V2O5、ZnO、BaO、CaO、AgO、Tl2O3、SiO2At least one of; more preferably, the glass powder comprises the following components in percentage by weight: 30 to 90 wt% of PbO, 0.1 to 10 wt% of Al2O3、2～25wt％B2O3、0～10wt％SiO2、0～10wt％ZnO、0～50wt％Bi2O3、0～8wt％Li2O、0～10wt％ZnO、0～5wt％TeO2、0～3wt％WO3、0～10wt％Tl2O3、0～3wt％CaO、0～3wt％BaO、0～5wt％Sb2O30 to 6 wt% of AgO and 0 to 5 wt% of V2O5。
6. The thick-film silver aluminum paste of claim 4, wherein the organic vehicle comprises a solvent and a resin in a weight ratio of (3-12): (0.1-2).
7. The thick film silver aluminum paste of claim 6, wherein the resin comprises one or more of cellulose and its derivatives, polyvinyl butyral, polyethylene glycol, polyethylene oxide, polyvinyl pyrrolidone acrylic resin, polyvinyl alcohol, acrylic monomers, urea formaldehyde resin melamine formaldehyde resin.
8. The thick-film silver-aluminum paste according to any one of claims 4 to 7, wherein the raw materials for preparing the silver-aluminum paste further comprise one or more of a leveling agent, a wetting dispersant, a metal assistant, a non-metal assistant and a thixotropic agent.
9. The preparation method of the thick-film silver-aluminum paste according to any one of claims 4 to 8, characterized by comprising the following steps: and mixing, grinding and filtering the preparation raw materials of the silver-aluminum paste to obtain the thick-film silver-aluminum paste.
10. Use of the thick film silver aluminum paste according to any one of claims 4 to 8, wherein the paste is used for an N-type TOPCon crystalline silicon solar cell or a P-type TOPCon crystalline silicon solar cell.
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| CN115714034A (en) * | 2022-12-12 | 2023-02-24 | 上海银浆科技有限公司 | Organic carrier for conductive silver-aluminum paste, conductive silver-aluminum paste containing organic carrier and preparation method of conductive silver-aluminum paste |
| WO2023124495A1 (en) * | 2021-12-31 | 2023-07-06 | 广东南海启明光大科技有限公司 | Glass powder for thick film silver paste adapting to crystalline silicon p+ layer contact and preparation method therefor |
| CN117727488A (en) * | 2024-02-18 | 2024-03-19 | 浙江晶科新材料有限公司 | Conductive paste for N-type TOPCON solar cell, preparation method and solar cell |
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