CN114353976A - Temperature detection circuit - Google Patents
Temperature detection circuit Download PDFInfo
- Publication number
- CN114353976A CN114353976A CN202111588517.3A CN202111588517A CN114353976A CN 114353976 A CN114353976 A CN 114353976A CN 202111588517 A CN202111588517 A CN 202111588517A CN 114353976 A CN114353976 A CN 114353976A
- Authority
- CN
- China
- Prior art keywords
- bias current
- temperature detection
- detection circuit
- npn triode
- npn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a temperature detection circuit.A source drain end of an MOS (metal oxide semiconductor) tube is connected with a working voltage, and the other end of the MOS tube is connected with a base electrode of a first NPN triode and a base electrode of a second NPN triode; the grid electrode of the MOS tube and the collector electrode of the first NPN triode are connected with a first bias current source; the emitter of the first NPN triode is grounded through a resistor; the emitter of the second NPN triode is grounded in short; the collector of the second NPN triode and the input end of the inverter are connected with a second bias current source; and the output end of the inverter is used as the output end of the temperature detection circuit. The temperature detection circuit can realize the temperature detection function only by few elements, and has few circuit branches, so the total power consumption of the circuit is very low, the circuit area is smaller, and the cost is low.
Description
Technical Field
The present invention relates to semiconductor circuit technology, and more particularly, to a temperature detection circuit.
Background
For an integrated circuit with large power consumption, the temperature of the integrated circuit may be high, and when the temperature is too high, the reliability of the integrated circuit may be affected. Therefore, temperature detection and protection are very important in some integrated circuits with large power consumption.
A conventional temperature sensing circuit, as shown in fig. 1, typically requires a comparator CMP, a reference voltage VREF, and a temperature-dependent voltage. The comparator compares the temperature-related voltage with the reference voltage to judge the current temperature of the integrated circuit. Wherein the reference voltage VREF needs to be generated by an additional circuit, and the temperature-dependent voltage is generated as shown in fig. 1, a bias current I1 flows through a transistor Q1, a voltage difference VBE is generated between the base and emitter of the transistor, and the VBE voltage is a negative temperature coefficient, usually-2 mV/deg.c, as known from the characteristics of the transistor.
The traditional method has the defects that the circuit is complex, and an external reference voltage and a comparator are needed, so that the circuit has large power consumption and large area.
Disclosure of Invention
The invention aims to solve the technical problem of providing a temperature detection circuit, which can realize the temperature detection function only by few elements and has few circuit branches, so the total circuit power consumption is very low, the circuit area is smaller and the cost is low.
In order to solve the above technical problem, the temperature detection circuit provided by the present invention includes a first bias current source I1, a second bias current source I2, a first NPN transistor Q1, a second NPN transistor Q2, a MOS transistor M1, an inverter INV, and a resistor R1;
one source drain end of the MOS transistor M1 is connected with a working voltage VDD, and the other source drain end of the MOS transistor M1 is connected with the base electrode of the first NPN triode Q1 and the base electrode of the second NPN triode Q2;
the grid electrode of the MOS transistor M1 and the collector electrode of the first NPN triode Q1 are connected with a first bias current source I1;
the emitter of the first NPN triode Q1 is grounded through a resistor R1;
the emitter of the second NPN triode Q2 is grounded in short;
the collector of the second NPN triode Q2 and the input end of the inverter INV are connected with a second bias current source I2;
and an output end TPOUT of the inverter INV is used as an output end of the temperature detection circuit.
Preferably, the temperature detection circuit further comprises a temperature output module;
the temperature output module calculates an output detection temperature value according to a first bias current I1 output by a first bias current source and a second bias current I2 output by a second bias current source when the level of an output end TPOUT of the inverter INV is inverted:
IS1is the saturation current of the first NPN transistor Q1, k is Boltzmann constant, Q is the electronic charge, IS2Is the saturation current, R, of the second NPN transistor Q21Is the resistance value of the resistor.
Preferably, the first bias current I1 output by the first bias current source is smaller than the second bias current I2 output by the second bias current source.
Preferably, I2 ═ K × I1, K being a positive integer.
Preferably, K is 5 to 15.
Preferably, the first NPN transistor Q1 is formed by connecting M basic NPN transistors having the same structure in parallel;
the second NPN triode Q2 is formed by connecting N basic NPN triodes with the same structure in parallel;
I1*N<I2*M。
preferably, the resistance of the resistor R1 is 0.5K omega-10K omega.
Preferably, the MOS transistor M1 is an enhancement MOS transistor.
Preferably, the MOS transistor M1 is an N-channel enhancement type MOS transistor;
the drain terminal of the MOS transistor M1 is connected to the operating voltage VDD, and the source terminal thereof is connected to the base of the first NPN transistor Q1 and the base of the second NPN transistor Q2.
The temperature detection circuit of the invention does not need external reference voltage and a comparator, can realize the temperature detection function by only needing few elements, and has few circuit branches, thereby having low total circuit power consumption, smaller circuit area and low cost.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the present invention are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a conventional temperature sensing circuit;
FIG. 2 shows an embodiment of the temperature detection circuit of the present invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 2, the temperature detection circuit includes a first bias current source I1, a second bias current source I2, a first NPN transistor Q1, a second NPN transistor Q2, a MOS transistor M1, a resistor R1, and an inverter INV;
one source drain end of the MOS transistor M1 is connected with a working voltage VDD, and the other source drain end of the MOS transistor M1 is connected with the base electrode of the first NPN triode Q1 and the base electrode of the second NPN triode Q2;
the grid electrode of the MOS transistor M1 and the collector electrode of the first NPN triode Q1 are connected with a first bias current source I1;
the emitter of the first NPN triode Q1 is grounded through a resistor R1;
the emitter of the second NPN triode Q2 is grounded in short;
the collector of the second NPN triode Q2 and the input end of the inverter INV are connected with a second bias current source I2;
and an output end TPOUT of the inverter INV is used as an output end of the temperature detection circuit.
Preferably, the temperature detection circuit further comprises a temperature output module;
the temperature output module calculates an output detection temperature value according to a first bias current I1 output by a first bias current source and a second bias current I2 output by a second bias current source when the level of an output end TPOUT of the inverter INV is inverted:
IS1is the saturation current of the first NPN transistor Q1, k is Boltzmann constant, Q is the electronic charge, IS2Is the saturation current, R, of the second NPN transistor Q21Is the resistance value of the resistor.
In the temperature detecting circuit of the first embodiment, the first bias current I1 outputted by the first bias current source flows through the first NPN transistor Q1, and the first NPN transistor Q1The emitter current of the diode Q1 is I1, i.e.
Wherein IS1Is the saturation current, V, of the first NPN transistor Q1TIn order to realize the thermal voltage, the device is provided with a heating device,
where k is the boltzmann constant, T is the absolute temperature, and q is the electronic charge. The base-emitter voltage difference of the first NPN triode Q1 can be obtained
The first bias current I1 flows through the resistor R1 at the same time, and the voltage generated on the resistor R1 is I1R1Therefore, the voltage VB at the junction between the base of the first NPN transistor Q1 and the base of the second NPN transistor Q2 is: vB＝VBE1+I1R1. The voltage from the connection point VB is simultaneously applied to the base of the second NPN transistor Q2, so that the emitter current I of the second NPN transistor Q2e2In relation to the voltage at the connection point VB, i.e.
In the formula IS2Is the saturation current of the second NPN transistor Q2. When the emitter current I of the second NPN triode Q2e2Equal to the second bias current I2 output by the second bias current source, i.e.
Then it can be obtained
Wherein VBE2thThe emitter current of the second NPN transistor Q2 is equal to the base-emitter voltage difference of the second NPN transistor Q2 at I2. Further, the method can be obtained as follows: vB-VBE2th＝VBE1+I1R2-VVBE2th(ii) a Substitution into VBE1And VBE2thObtaining:
because of I1<I2, hence VB-VBE2thVoltage is negative temperature coefficient when VB-VBE2thWhen the value is equal to 0, the following results are obtained:
when temperature is high<T0When, VB-VBE2th>0, thus VB>VBE2thEmitter current I of second NPN triode Q2e2>I2The collector voltage VC2 of the second NPN transistor Q2 is pulled low, and after passing through the inverter INV, the output terminal TPOUT of the inverter INV outputs a high level. When temperature is high>T0When, VB-VBE2th<0, thus VB<VBE2thEmitter current I of second NPN triode Q2e2<I2The collector voltage VC2 of the second NPN transistor Q2 is pulled high, and after passing through the inverter INV, the output terminal TPOUT of the inverter INV outputs a low level. By gradually changing the first bias current I1 output by the first bias current source or the second bias current I2 output by the second bias current source, the temperature at the time of level inversion of the output terminal TPOUT of the inverter INV can be determined according to the first bias current I1 and the second bias current I2 at the time of level inversion of the output terminal TPOUT of the inverter INV:
the temperature detection circuit of the first embodiment does not need an external reference voltage and a comparator, can realize the temperature detection function by only needing few elements, and has few circuit branches, so that the total power consumption of the circuit is low, the circuit area is small, and the cost is low.
Carry out two
Based on the temperature detection circuit of the first embodiment, the first bias current I1 output by the first bias current source is smaller than the second bias current I2 output by the second bias current source.
Preferably, I2 ═ K × I1, K being a positive integer.
Preferably, K is 5-15, such as K is 6, 8 or 10.
Implementation III
Based on the temperature detection circuit of the second embodiment, the first NPN transistor Q1 is formed by connecting M basic NPN transistors having the same structure in parallel, and I can be obtainedS1＝MIS0In which IS0The saturation current of the basic NPN triode;
the second NPN triode Q2 is composed of N basic NPN triodes with the same structure in parallel, and I can be obtainedS2＝NIS0In which IS0The saturation current of the basic NPN triode;
I1*N<I2*M。
preferably, the resistance of the resistor R1 is 0.5K omega-10K omega.
Preferably, the MOS transistor M1 is an enhancement MOS transistor.
Preferably, the MOS transistor M1 is an N-channel enhancement type MOS transistor;
the drain terminal of the MOS transistor M1 is connected to the operating voltage VDD, and the source terminal thereof is connected to the base of the first NPN transistor Q1 and the base of the second NPN transistor Q2.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A temperature detection circuit is characterized by comprising a first bias current source (I1), a second bias current source (I2), a first NPN triode (Q1), a second NPN triode (Q2), a MOS (metal oxide semiconductor) tube (M1), an Inverter (INV) and a resistor (R1);
one source drain end of the MOS transistor (M1) is connected with a working Voltage (VDD), and the other source drain end of the MOS transistor is connected with a base electrode of a first NPN triode (Q1) and a base electrode of a second NPN triode (Q2);
the grid electrode of the MOS transistor (M1) and the collector electrode of the first NPN triode (Q1) are connected with a first bias current source (I1);
an emitter of the first NPN transistor (Q1) is grounded through a resistor (R1);
the emitter of the second NPN triode (Q2) is short-grounded;
the collector of the second NPN triode (Q2) and the input end of the Inverter (INV) are connected with a second bias current source (I2);
and the output end (TPOUT) of the Inverter (INV) is used as the output end of the temperature detection circuit.
2. The temperature detection circuit according to claim 1,
the temperature detection circuit also comprises a temperature output module;
the temperature output module calculates an output detection temperature value according to a first bias current I1 output by a first bias current source and a second bias current I2 output by a second bias current source when the level of an output end (TPOUT) of the Inverter (INV) is inverted:
IS1is the saturation current of the first NPN transistor (Q1), k is Boltzmann constant, Q is the electronic charge, IS2Is the saturation current of the second NPN transistor (Q2)1Is the resistance value of the resistor.
3. The temperature detection circuit according to claim 1,
the first bias current I1 output by the first bias current source is less than the second bias current I2 output by the second bias current source.
4. The temperature detection circuit according to claim 3,
i2 ═ K × I1, K being a positive integer.
5. The temperature detection circuit according to claim 4,
k is 5 to 15.
6. The temperature detection circuit according to claim 3,
the first NPN triode (Q1) is formed by connecting M basic NPN triodes with the same structure in parallel;
the second NPN triode (Q2) is formed by connecting N basic NPN triodes with the same structure in parallel;
I1*N<I2*M。
7. the temperature detection circuit according to claim 1,
the resistance value of the resistor (R1) is 0.5K omega-10K omega.
8. The temperature detection circuit according to claim 1,
the MOS tube (M1) is an enhancement type MOS tube.
9. The temperature detection circuit according to claim 1,
the MOS tube (M1) is an N-channel enhancement type MOS tube;
the drain end of the MOS transistor (M1) is connected with the working Voltage (VDD), and the source end of the MOS transistor is connected with the base electrode of the first NPN triode (Q1) and the base electrode of the second NPN triode (Q2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111588517.3A CN114353976A (en) | 2021-12-23 | 2021-12-23 | Temperature detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111588517.3A CN114353976A (en) | 2021-12-23 | 2021-12-23 | Temperature detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114353976A true CN114353976A (en) | 2022-04-15 |
Family
ID=81101618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111588517.3A Pending CN114353976A (en) | 2021-12-23 | 2021-12-23 | Temperature detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114353976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117650483A (en) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
-
2021
- 2021-12-23 CN CN202111588517.3A patent/CN114353976A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117650483A (en) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
| CN117650483B (en) * | 2024-01-30 | 2024-04-16 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108007594B (en) | Temperature detection circuit and method | |
| CN101943613B (en) | Sub-threshold CMOS temperature detector | |
| CN101105414A (en) | Temperature sensing apparatus for producing sensing signal and its method | |
| EP0360333A2 (en) | Temperature threshold sensing circuit | |
| CN104967095B (en) | Thermal-shutdown circuit | |
| CN108225588B (en) | Temperature sensor and temperature detection method | |
| CN110954229B (en) | Temperature detection circuit, temperature detection equipment, chip and circuit structure | |
| CN112803363B (en) | Over-temperature protection circuit | |
| CN110989760B (en) | Detection circuit based on band-gap reference voltage and band-gap reference voltage circuit | |
| JPH0774550A (en) | Overheat detection circuit | |
| CN110867826A (en) | Low temperature floats under-voltage locking circuit | |
| WO2023103748A1 (en) | Low-voltage detection circuit | |
| CN102338668A (en) | Temperature detection circuit | |
| CN109976437B (en) | Bipolar NPN type band gap reference voltage circuit | |
| CN114353976A (en) | Temperature detection circuit | |
| CN114265462B (en) | Band gap reference, chip, electronic device and electronic equipment | |
| CN115145346A (en) | Band gap reference circuit | |
| CN213122741U (en) | Take hysteretic excess temperature protection circuit | |
| WO2021184823A1 (en) | Reference comparison circuit | |
| CN116683897B (en) | Comparator circuit, integrated circuit, and electronic device | |
| CN113125920B (en) | Process sensor | |
| JP2794880B2 (en) | Power IC overheat detection circuit and its structure | |
| CN101320279A (en) | Current generator | |
| CN111953330A (en) | Low-power-consumption power-on reset circuit irrelevant to temperature | |
| CN114977094A (en) | Undervoltage protection circuit and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |