CN114335200A - Cadmium telluride thin film solar cell module and preparation method thereof - Google Patents
Cadmium telluride thin film solar cell module and preparation method thereof Download PDFInfo
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- CN114335200A CN114335200A CN202111672128.9A CN202111672128A CN114335200A CN 114335200 A CN114335200 A CN 114335200A CN 202111672128 A CN202111672128 A CN 202111672128A CN 114335200 A CN114335200 A CN 114335200A
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- cadmium telluride
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- solar cell
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 22
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000031700 light absorption Effects 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000010329 laser etching Methods 0.000 claims description 5
- 239000002313 adhesive film Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 238000002202 sandwich sublimation Methods 0.000 claims description 2
- 238000010248 power generation Methods 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a cadmium telluride thin film solar cell module and a preparation method thereof, wherein the preparation method comprises the following steps: depositing an FTO transparent conductive layer, a cadmium sulfide window layer and a cadmium telluride light absorption layer on a glass substrate; carrying out P1 laser scribing, and etching the cadmium telluride light absorption layer, the cadmium sulfide window layer and the FTO transparent conductive layer through laser; carrying out P2 laser scribing, and etching the cadmium telluride light absorption layer and the cadmium sulfide window layer through laser; depositing a back electrode layer on the cadmium telluride light absorbing layer; carrying out P3 laser scribing, and etching the back electrode layer, the cadmium telluride light absorption layer and the cadmium sulfide window layer through laser; and arranging a drainage bar and a bus bar on the back electrode layer, and installing a junction box. According to the invention, the cadmium telluride thin film solar cell module is divided into a plurality of power generation areas by adopting P1 laser scribing, P2 laser scribing and P3 laser scribing, so that the output voltage of the solar cell module can be effectively reduced, and the popularization and application of the cadmium telluride thin film cell are facilitated.
Description
Technical Field
The invention belongs to the field of photovoltaic power generation assembly production, and particularly relates to a cadmium telluride thin film solar cell assembly and a preparation method thereof.
Background
The cadmium telluride thin-film solar cell is a thin-film solar cell based on a heterojunction of p-type CdTe and n-type CdS, is called a CdTe cell for short, has the production cost greatly lower than that of crystalline silicon solar cells and solar cells made of other materials, and has good weak light power generation performance and low temperature coefficient. In order to optimize power output and increase output voltage, the preparation of the thin film battery assembly is usually combined with a laser scribing technology, that is, the whole battery is divided into a series of strip sub-batteries by a laser scribing mode, and then the sub-batteries are connected in series by combining a subsequent coating process.
The thin film battery pack prepared by the method is high in output voltage generally, and is not beneficial to popularization and application of products. For example, in the field of large-scale photovoltaic power stations, because the voltage of the thin film battery assembly is higher and the current is lower, compared with the crystalline silicon battery assembly, the construction of a solar photovoltaic power station with the same scale needs more electrical equipment such as inverters, cables and the like, so that the cost of the matched products of the system is increased, the flat-price internet access is difficult to realize, the application is limited, and the popularization of the product is not facilitated.
Disclosure of Invention
In order to solve the problem of higher output voltage of a thin film cell module in the prior art, the invention aims to provide a cadmium telluride thin film solar cell module and a preparation method thereof.
On one hand, the technical scheme adopted by the invention is as follows: a preparation method of a cadmium telluride thin film solar cell module comprises the following steps:
sequentially depositing an FTO transparent conductive layer, a cadmium sulfide window layer and a cadmium telluride light absorption layer on a glass substrate from bottom to top;
carrying out P1 laser scribing, etching the cadmium telluride light absorption layer, the cadmium sulfide window layer and the FTO transparent conductive layer through laser to obtain a first scribing groove, and then filling photoresist in the first scribing groove;
carrying out P2 laser scribing, and etching the cadmium telluride light absorption layer and the cadmium sulfide window layer through laser to obtain a second scribing groove;
depositing a back electrode layer on the cadmium telluride light absorbing layer, wherein the back electrode layer is filled in the second scribing grooves and covers the surface of the cadmium telluride light absorbing layer;
carrying out P3 laser scribing, and obtaining a third scribing groove by laser etching the back electrode layer, the cadmium telluride light absorption layer and the cadmium sulfide window layer;
and arranging a drainage bar and a bus bar on the back electrode layer, packaging by adopting an adhesive film and cover plate glass, and installing a junction box to obtain the cadmium telluride thin-film solar cell module.
As an alternative to the above technical solution, the P1 laser scribing uses a laser with a wavelength of 355 nm.
As an optional mode of the technical scheme, the P2 laser scribing adopts laser with the wavelength of 532 nm.
As an optional mode of the technical scheme, the P3 laser scribing adopts laser with the wavelength of 532 nm.
As an optional mode of the above technical solution, the cadmium sulfide window layer and the cadmium telluride light absorbing layer are both obtained by a close space sublimation method.
As an optional mode of the above technical solution, the material of the back electrode layer is molybdenum, and the back electrode layer is obtained by a magnetron sputtering method.
As an alternative mode of the above technical solution, the P2 laser scribed second scribed groove is based on the P1 laser scribed first scribed groove, and the distance between the two grooves is 30-125 μm.
As an alternative mode of the above technical solution, the P3 laser scribed third scribed groove is based on the P2 laser scribed second scribed groove, and the distance between the two grooves is 30-125 μm.
On the other hand, the technical scheme adopted by the invention is as follows: a cadmium telluride thin film solar cell module is provided with a first cell area, a second cell area and a third cell area in sequence, wherein the first cell area is provided with a first electrode, a shared second electrode is arranged between the first cell area and the second cell area, a shared third electrode is arranged between the second cell area and the third cell area, and the third cell area is provided with a fourth electrode; first electrode, second electrode, third electrode and fourth electrode are equipped with first drainage bar, second drainage bar, third drainage bar and fourth drainage bar respectively, be connected with first busbar between first drainage bar and the third drainage bar, be connected with the second busbar between second drainage bar and the third drainage bar, the second busbar is equipped with interrupt portion, interrupt portion is equipped with the terminal box, be connected with the third busbar between second drainage bar and the fourth drainage bar.
As an optional mode of the above technical solution, when the second electrode is a common anode and the third electrode is a common cathode, laser scribe lines in two end regions of the common anode are mirror-symmetric, laser scribe third scribe grooves in two adjacent battery regions P3 are adjacent, laser scribe lines in two end regions of the common cathode are mirror-symmetric, and laser scribe first scribe grooves in two adjacent battery regions P1 are adjacent; when the second electrode is a shared cathode and the third electrode is a shared anode, the laser scribing grooves in the two end areas of the shared anode are mirror-symmetrical, and the laser scribing grooves in the two adjacent battery areas P3 are adjacent; the laser scribing lines of the two end areas of the shared negative electrode are in mirror symmetry, and the first scribing grooves laser scribed by the two adjacent battery areas P1 are adjacent.
The invention has the beneficial effects that:
the invention provides a cadmium telluride thin-film solar cell module and a preparation method thereof, wherein the cadmium telluride thin-film solar cell module is divided into a plurality of power generation areas by adopting P1 laser scribing, P2 laser scribing and P3 laser scribing, so that the output voltage of the solar cell module can be effectively reduced, and the popularization and application of a cadmium telluride thin-film cell are facilitated. In addition, the cadmium telluride thin film solar cell module is partitioned, so that the problem that the whole cell module is influenced due to the problem of a certain area of the solar cell module can be effectively solved.
Drawings
FIG. 1 is a schematic diagram of the external structure of a cadmium telluride thin film solar cell module provided by the present invention;
FIG. 2 is a schematic view of an internal structure of a cadmium telluride thin film solar cell module provided by the present invention;
FIG. 3 is a schematic view of another internal structure of a cadmium telluride thin film solar cell module provided by the invention.
In the figure: 1-a glass substrate; a 2-FTO transparent conductive layer; 3-a cadmium sulfide window layer; 4-a cadmium telluride light absorbing layer; 5-a back electrode layer; 6-a first drainage strip; 7-a second drainage strip; 8-a third drainage strip; 9-a fourth drainage strip; 10-a first busbar; 11-a second busbar; 12-a third bus bar; 13-a junction box; 14-a first scribe line trench; 15-a second scribe line trench; 16-third scribe line trenches.
Detailed Description
The cadmium telluride thin-film solar cell is a thin-film solar cell based on a heterojunction of p-type CdTe and n-type CdS, is called a CdTe cell for short, has the production cost greatly lower than that of crystalline silicon solar cells and solar cells made of other materials, and has good weak light power generation performance and low temperature coefficient. In order to optimize power output and increase output voltage, the preparation of the thin film battery assembly is usually combined with a laser scribing technology, that is, the whole battery is divided into a series of strip sub-batteries by a laser scribing mode, and then the sub-batteries are connected in series by combining a subsequent coating process. The thin film battery pack prepared by the method is high in output voltage generally, and is not beneficial to popularization and application of products. For example, in the field of large-scale photovoltaic power stations, because the voltage of the thin film battery assembly is higher and the current is lower, compared with the crystalline silicon battery assembly, the construction of a solar photovoltaic power station with the same scale needs more electrical equipment such as inverters, cables and the like, so that the cost of the matched products of the system is increased, the flat-price internet access is difficult to realize, the application is limited, and the popularization of the product is not facilitated.
Based on the above problems, as shown in fig. 2 and fig. 3, the present embodiment provides a method for manufacturing a cadmium telluride thin film solar cell module, which includes the following steps:
(1) an FTO transparent conductive layer 2, a cadmium sulfide window layer 3 and a cadmium telluride light absorption layer 4 are sequentially deposited on a glass substrate 1 from bottom to top.
(2) And P1 laser scribing is carried out, the FTO transparent conductive layer 2, the cadmium sulfide window layer 3 and the cadmium telluride absorption layer 4 are subjected to laser etching to obtain a first scribing groove 14, and then photoresist is filled in the first scribing groove 14 to ensure the insulating property.
(3) Carrying out P2 laser scribing, and etching the cadmium telluride light absorption layer 4 and the cadmium sulfide window layer 3 through laser to obtain a second scribing groove 15; the second scribing groove 15 scribed by the P2 laser is based on the first scribing groove 14 scribed by the P1 laser, the distance between the two grooves is 30-125 μm, preferably 75 μm, and the two grooves are mirror images by taking the common electrode as a center line.
(4) Depositing a back electrode layer 5 on the cadmium telluride light absorbing layer 4, wherein the back electrode layer 5 is filled in the second scribing grooves 15 and covers the surface of the cadmium telluride light absorbing layer 4;
(5) carrying out P3 laser scribing, and obtaining a third scribing groove 16 by carrying out laser etching on the back electrode layer 5, the cadmium telluride light absorption layer 4 and the cadmium sulfide window layer 3; the P3 laser-scribed third scribe groove 16 is based on the P2 laser-scribed second scribe groove 15, the distance between the two grooves is 30-125 μm, and the grooves are mirror-symmetrical by taking the common electrode as a center line.
(6) And welding a current guide bar and a bus bar on the back electrode layer 5, packaging by adopting an adhesive film and cover plate glass, installing the junction box 13, leading the bus bar into the junction box 13 after penetrating through the adhesive film and the cover plate packaging material, and obtaining the cadmium telluride thin-film solar cell module.
In this embodiment, the P1 laser scribing uses a laser with a wavelength of 355nm, the P2 laser scribing uses a laser with a wavelength of 532nm, and the P3 laser scribing uses a laser with a wavelength of 532 nm. Preferably, the cadmium sulfide window layer 3 and the cadmium telluride light absorption layer 4 are both obtained by a near space sublimation method, the back electrode layer 5 is made of molybdenum, namely a back electrode Mo layer, and the back electrode Mo layer is obtained by a magnetron sputtering method.
The invention provides a preparation method of a cadmium telluride thin film solar cell module, which divides the cadmium telluride thin film solar cell module into a plurality of power generation areas by adopting P1 laser scribing, P2 laser scribing and P3 laser scribing, can effectively reduce the output voltage of the solar cell module, and is beneficial to the popularization and application of cadmium telluride thin film cells. In addition, the cadmium telluride thin film solar cell module is partitioned, so that the problem that the whole cell module is influenced due to the problem of a certain area of the solar cell module can be effectively solved.
As shown in fig. 1, the present embodiment provides a cadmium telluride thin film solar cell module obtained by the above preparation method, where the cadmium telluride thin film solar cell module is sequentially provided with a first cell area, a second cell area and a third cell area, the first cell area is provided with a first electrode, a shared second electrode is arranged between the first cell area and the second cell area, a shared third electrode is arranged between the second cell area and the third cell area, and the third cell area is provided with a fourth electrode; first electrode, second electrode, third electrode and fourth electrode are equipped with first drainage bar 6, second drainage bar 7, third drainage bar 8 and fourth drainage bar 9 respectively, be connected with first busbar 10 between first drainage bar 6 and the third drainage bar 8, be connected with second busbar 11 between second drainage bar 7 and the third drainage bar 8, be connected with third busbar 12 between second drainage bar 7 and the fourth drainage bar 9, second busbar 11 is equipped with interrupt portion, interrupt portion is equipped with terminal box 13.
In this embodiment, when the second electrode is a common anode and the third electrode is a common cathode, the laser scribe lines on the two end regions of the common anode are mirror-symmetric, and the laser scribe third scribe line grooves 16 of the two adjacent cell regions P3 are adjacent; the areas at the two ends of the common negative electrode are in mirror symmetry through laser scribing, the first scribing grooves 14 laser scribed in the two adjacent battery areas P1 are adjacent, the common positive electrode and the common negative electrode are introduced into the junction box 13 through the third bus bar 12, and the current direction in the battery assembly is shown in FIG. 2.
When the second electrode is a shared cathode and the third electrode is a shared anode, the laser scribing lines in the two end regions of the shared anode are mirror-symmetrical, and the laser scribed third scribing grooves 16 of the two adjacent battery regions P3 are adjacent; the areas at the two ends of the common negative electrode are in mirror symmetry through laser scribing, the first scribing grooves 14 laser scribed in the two adjacent battery areas P1 are adjacent, the common positive electrode and the common negative electrode are introduced into the junction box 13 through the third bus bar 12, and the current direction in the battery assembly is shown in FIG. 3.
The invention provides a cadmium telluride thin-film solar cell module, which is divided into a plurality of power generation areas by adopting P1 laser scribing, P2 laser scribing and P3 laser scribing, and can effectively reduce the output voltage of the cadmium telluride thin-film solar cell module through a three-spliced parallel module structure, thereby being beneficial to popularization and application of cadmium telluride thin-film cells; in addition, through the parallelly connected subassembly structure of three piecings, divide into three subregion with the subassembly, thereby can effectually avoid certain regional problem of taking place of solar module to cause the problem of influence to whole battery pack. It should be noted that the laser scribing technology used in the invention is a stable and mature technology, and the width of the cell area can be flexibly adjusted according to different user requirements and application scenes, so that different voltage outputs can be realized, and the application range of the cadmium telluride thin-film solar cell module can be expanded.
In the description of the present invention, the terms "mounted," "connected," "fixed," and the like are to be understood broadly and may be fixedly connected, detachably connected, or integrated; may be a mechanical or electrical connection; either directly or indirectly through intervening media, either internally or in any other relationship. Those skilled in the art will understand the specific meaning of the above terms in the present invention. Furthermore, the particular features, structures, etc. described in the examples can be included in at least one implementation and can be combined by one skilled in the art without conflicting therewith. The protection scope of the present invention is not limited to the above specific examples, and embodiments that can be imagined by those skilled in the art without creative efforts based on the basic technical concept of the present invention belong to the protection scope of the present invention.
Claims (10)
1. A preparation method of a cadmium telluride thin film solar cell module is characterized by comprising the following steps:
sequentially depositing an FTO transparent conductive layer (2), a cadmium sulfide window layer (3) and a cadmium telluride light absorption layer (4) on a glass substrate (1) from bottom to top;
carrying out P1 laser scribing, obtaining a first scribing groove (14) by laser etching of the cadmium telluride light absorption layer (4), the cadmium sulfide window layer (3) and the FTO transparent conducting layer (2), and then filling photoresist in the first scribing groove (14);
p2 laser scribing is carried out, and a second scribing groove (15) is obtained by laser etching the cadmium telluride light absorption layer (4) and the cadmium sulfide window layer (3);
depositing a back electrode layer (5) on the cadmium telluride light absorbing layer (4), wherein the back electrode layer (5) is filled into the second scribing grooves (15) and covers the surface of the cadmium telluride light absorbing layer (4);
carrying out P3 laser scribing, and etching the back electrode layer (5), the cadmium telluride light absorption layer (4) and the cadmium sulfide window layer (3) by laser to obtain a third scribing groove (16);
and arranging a drainage bar and a bus bar on the back electrode layer (5), packaging by adopting an adhesive film and cover plate glass, and installing a junction box (13) to obtain the cadmium telluride thin-film solar cell module.
2. The method of claim 1, wherein the P1 laser scribing uses a laser with a wavelength of 355 nm.
3. The method for manufacturing a cadmium telluride thin film solar cell module as set forth in claim 1 wherein the P2 laser scribing uses a laser having a wavelength of 532 nm.
4. The method for manufacturing a cadmium telluride thin film solar cell module as set forth in claim 1 wherein the P3 laser scribing uses a laser having a wavelength of 532 nm.
5. A method for manufacturing a cadmium telluride thin film solar cell module as claimed in claim 1 wherein the cadmium sulfide window layer (3) and the cadmium telluride light absorbing layer (4) are both obtained by a close space sublimation method.
6. The method for preparing a cadmium telluride thin film solar cell module as claimed in claim 1, wherein the material of the back electrode layer (5) is molybdenum, and the back electrode layer (5) is obtained by magnetron sputtering.
7. A method of manufacturing a cadmium telluride thin film solar cell module as claimed in claim 1 wherein the P2 laser scribed second scribe grooves (15) are spaced apart 30-125 μm from the P1 laser scribed first scribe grooves (14).
8. A method of manufacturing a cadmium telluride thin film solar cell module as claimed in claim 1 wherein the P3 laser scribed third scribe grooves (16) are spaced apart 30-125 μm from the P2 laser scribed second scribe grooves (15).
9. A cadmium telluride thin film solar cell module prepared by the preparation method according to any one of claims 1 to 8, the solar cell module being provided with a first cell area, a second cell area and a third cell area in this order, the first cell area being provided with a first electrode, a common second electrode being provided between the first cell area and the second cell area, a common third electrode being provided between the second cell area and the third cell area, the third cell area being provided with a fourth electrode; first electrode, second electrode, third electrode and fourth electrode are equipped with first drainage bar (6), second drainage bar (7), third drainage bar (8) and fourth drainage bar (9) respectively, be connected with first busbar (10) between first drainage bar (6) and third drainage bar (8), be connected with second busbar (11) between second drainage bar (7) and third drainage bar (8), second busbar (11) are equipped with interrupt portion, interrupt portion is equipped with terminal box (13), be connected with third busbar (12) between second drainage bar (7) and fourth drainage bar (9).
10. A cadmium telluride thin film solar cell module as in claim 9 wherein when the second electrode is a common positive electrode and the third electrode is a common negative electrode, the common positive electrode end regions are laser scribed mirror images, adjacent two cell regions P3 are laser scribed with the third scribe grooves (16) adjacent, the common negative electrode end regions are laser scribed mirror images, adjacent two cell regions P1 are laser scribed with the first scribe grooves (14) adjacent; when the second electrode is a shared cathode and the third electrode is a shared anode, the laser scribing lines in the two end regions of the shared anode are in mirror symmetry, and the laser scribed third scribing grooves (16) of the two adjacent battery regions P3 are adjacent; the laser scribing lines of the two end areas of the shared negative electrode are in mirror symmetry, and the first scribing grooves (14) laser scribed by the two adjacent battery areas P1 are adjacent.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111672128.9A CN114335200A (en) | 2021-12-31 | 2021-12-31 | Cadmium telluride thin film solar cell module and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115458616A (en) * | 2022-11-14 | 2022-12-09 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8377737B1 (en) * | 2011-11-30 | 2013-02-19 | Primestar Solar, Inc. | Methods of short wavelength laser scribing of a thin film photovoltaic device |
| CN108987511A (en) * | 2018-07-23 | 2018-12-11 | 成都中建材光电材料有限公司 | A kind of integrated approach of cadmium telluride thin-film battery |
| CN109273545A (en) * | 2018-11-01 | 2019-01-25 | 成都中建材光电材料有限公司 | A kind of production method of cadmium telluride diaphragm solar battery component |
| CN214956897U (en) * | 2021-06-10 | 2021-11-30 | 邯郸中建材光电材料有限公司 | Solar cell module |
-
2021
- 2021-12-31 CN CN202111672128.9A patent/CN114335200A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8377737B1 (en) * | 2011-11-30 | 2013-02-19 | Primestar Solar, Inc. | Methods of short wavelength laser scribing of a thin film photovoltaic device |
| CN108987511A (en) * | 2018-07-23 | 2018-12-11 | 成都中建材光电材料有限公司 | A kind of integrated approach of cadmium telluride thin-film battery |
| CN109273545A (en) * | 2018-11-01 | 2019-01-25 | 成都中建材光电材料有限公司 | A kind of production method of cadmium telluride diaphragm solar battery component |
| CN214956897U (en) * | 2021-06-10 | 2021-11-30 | 邯郸中建材光电材料有限公司 | Solar cell module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115458616A (en) * | 2022-11-14 | 2022-12-09 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
| CN115458616B (en) * | 2022-11-14 | 2023-03-10 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
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