CN114330066B

CN114330066B - Method and device for determining size of wafer in isotope thermal photovoltaic system

Info

Publication number: CN114330066B
Application number: CN202111656167.XA
Authority: CN
Inventors: 邵荣雨; 杨爱香; 朱定军; 邵剑雄; 刘树铭; 汤亮亮; 邱玺玉; 田岱; 韩承志; 张文佳; 邱家稳; 陈熙萌
Original assignee: Lanzhou University
Current assignee: Lanzhou University
Priority date: 2021-12-30
Filing date: 2021-12-30
Publication date: 2024-07-05
Anticipated expiration: 2041-12-30
Also published as: CN114330066A

Abstract

The application provides a method and a device for determining the size of a wafer in an isotope thermal photovoltaic system, wherein the method comprises the following steps: step 1: obtaining simplified component devices of the isotope thermal photovoltaic system; step 2: importing the intrinsic parameters, boundary condition parameters and space dimensions of the materials for simplifying the component devices into finite element software to form a three-dimensional model; step3: dividing finite element grids of the three-dimensional model to form grid nodes; step4: acquiring the radiation illumination intensity of the grid nodes through a radiation heat flux interface; step5: the radiation illumination intensity is led into a topology mathematical model, and the length y _j and the width x _ij of each wafer are determined; step6: and calculating an average factor based on the length y _j and the width x _ij, if the average factor is larger than a preset threshold, determining y _j、x_ij as the optimal size of the wafer, otherwise, repeating the steps 2 to 6 until the average factor is larger than the preset threshold. The application can improve the power generation of the isotope thermal photovoltaic system.

Description

Method and device for determining size of wafer in isotope thermal photovoltaic system

Technical Field

The application relates to the technical field of isotope power generation, in particular to a method and a device for determining the size of a wafer in an isotope thermal photovoltaic system.

Background

The isotope thermal photovoltaic system (RTPV) has the advantages of high power generation efficiency, high power density, long service life and the like, and the power generation principle is similar to that of solar power generation, so that the isotope thermal photovoltaic system can play an important role in space exploration, spaceflight navigation and military national defense in the future.

In the present stage, the heat source of the isotope thermal photovoltaic system is usually designed into a rectangular structure, because of the limitation of the rectangular space structure of the heat source, when the spectrum radiated by the radiator on the surface of the heat source irradiates the surface of the photoelectric conversion wafer, the space distribution mode of high illumination intensity in the center and low illumination intensity at the edge of the wafer array is presented, the electric power output at the edge of the wafer array is reduced, a plurality of wafers included in the wafer array are connected in a serial-parallel mode, and after the wafers are connected in a serial-parallel mode, the power generation of the whole wafer array is reduced.

Therefore, the technical problem of low power generation caused by uneven spectrum irradiation is to be solved in the field of power generation of isotope thermal photovoltaic systems.

Disclosure of Invention

Accordingly, an object of the embodiments of the present application is to provide a method and an apparatus for determining a size of a wafer in an isotope thermal photovoltaic system, which can design a space size of each wafer in a wafer array with a target condition that a radiation illumination intensity received by each wafer is consistent, so as to improve a power generation power of the isotope thermal photovoltaic system.

In a first aspect, an embodiment of the present application provides a method for determining a size of a wafer in an isotope thermo-photovoltaic system, where the determining method includes:

Step 1: acquiring a simplified component device of the isotope thermal photovoltaic system, and acquiring material inherent parameters, boundary condition parameters and space dimensions of the simplified component device; wherein the simplified component device comprises: a heat source, a radiator, a filter, a wafer array and a heat insulation material; the intrinsic parameters of the material include: thermal conductivity, heat capacity, material surface emissivity, transmissivity, reflectivity, density; the boundary condition parameters include: initial temperature, heat source power;

Step 2: importing the intrinsic parameters, boundary condition parameters and space dimensions of the materials of the simplified component device into finite element software, and forming a three-dimensional model of the isotope thermal photovoltaic system in the finite element software;

step 3: performing finite element mesh division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes;

Step 4: acquiring temperature values of all grid nodes output by the finite element software, and acquiring radiation illumination intensity of all grid nodes through a radiation heat flux interface;

Step 5: the radiation illumination intensity of each grid node is led into a topological mathematical model, and the length y _j of each wafer in the wafer array is determined by adopting the following formula and taking the consistent radiation illumination intensity received by each column of wafers in the wafer array as a target condition, wherein the lengths y _j of the wafers in the same column are consistent:

FindY＝{y_j},(j＝1、2、……、n)；

Min{w_j-W/n},(j＝1、2、……、n)；

The method comprises the following steps of adopting the following formula, taking the consistent radiation illumination intensity received by each wafer in the wafer array as a target condition, and determining the width x _ij of each wafer in the same column in the wafer array:

FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n)；

Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n)；

Wherein the total number of rows i in the wafer array is m, the total number of columns j is n, W is the radiation illumination intensity received by the wafer array, W _j is the radiation illumination intensity received by each column of the wafer in the wafer array, and W _ij is the radiation illumination intensity received by each wafer in the wafer array;

Step 6: based on the length y _j and the width x _ij of each wafer in the wafer array, updating the space size of the wafer array imported into the finite element software, updating the radiation illumination intensity w _ij received by each wafer, calculating an average factor based on the radiation illumination intensity w _ij received by each wafer, if the average factor is greater than a preset threshold, determining the length y _j and the width x _ij of each wafer as the optimal size of the wafer, otherwise, repeating the steps 2 to 6 until the average factor is greater than the preset threshold.

In one possible embodiment, the simplified component device of the acquisition isotope thermo-photovoltaic system comprises:

Decomposing the isotope thermal photovoltaic system to obtain a complete component device; wherein the complete component device comprises: a heat source with complete space structure, a radiator with complete space structure, a filter with complete space structure, a wafer array with complete space structure and a heat insulation material with complete space structure;

Simplifying the complete component device, omitting the internal structure of the heat source with complete space structure, the space size structure of the radiator with complete space structure, the space size structure of the filter with complete space structure, the plate thickness and the shape of the wafer array with complete space structure, and screw threads, screw holes, chamfers, fillets, supporting pieces and heating wires included in the complete component device to obtain the simplified component device of the isotope thermal photovoltaic system.

In one possible embodiment, the material intrinsic parameters and boundary condition parameters of the simplified component device include:

Material intrinsic parameters and boundary condition parameters of the heat source: thermal conductivity, heat capacity, density, heat source power, and initial temperature;

material intrinsic parameters and boundary condition parameters of the radiator: thermal conductivity, heat capacity, density, initial temperature, and material surface emissivity;

Material intrinsic parameters and boundary condition parameters of the filter: thermal conductivity, heat capacity, density, initial temperature, transmittance, reflectance, and material surface emissivity;

material intrinsic parameters and boundary condition parameters of the wafer array: thermal conductivity, heat capacity, density, initial temperature, and material surface emissivity;

the material inherent parameters and boundary condition parameters of the heat insulation material are as follows: thermal conductivity, heat capacity, density, initial temperature, and material surface emissivity.

In one possible implementation manner, the finite element meshing of the three-dimensional model of the isotope thermal photovoltaic system in the finite element software forms a plurality of mesh nodes, including:

Based on a first grid size, carrying out finite element grid division on the radiator and the filter, and based on a second grid size, carrying out finite element grid division on the heat source, the wafer array and the heat insulation material; wherein the density of the first mesh size is greater than the density of the second mesh size.

In one possible implementation, the topology mathematical model is calculated W, w _ij、w_j、y_j、x_ij by:

For each grid node, interpolating the radiation illumination intensity of the grid node by adopting a distance d to obtain a plurality of interpolation points and the numerical value of each interpolation point;

For each interpolation point, determining the product of the value of the interpolation point and the square of the distance d as the height value h _ab of the interpolation point, (a=1, 2, … …, m/d, b=1, 2, … …, n/d);

Accumulating the height values h _ab of the interpolation points of m/d rows and n/d columns, and calculating to obtain W;

calculating the sum of the values of the interpolation points of each column for each column of interpolation points to obtain a first value p _b (b=1, 2, … …, n/d) of each column of interpolation points;

Respectively calculating the formulas |p_s-W/n|、|p_s+p_s+1-W/n|、|p_s+p_s+1+p_s+2-W/n|、……、|p_s+p_s+1+p_s+2+……+p_n/d-W/n| to obtain (n/d-s+1) absolute values, determining p _b contained in the formula corresponding to the absolute value with the smallest value in the (n/d-s+1) absolute values as p _b corresponding to the q-th column of the wafer array, determining w _q、y_q based on p _b corresponding to the q-th column of the wafer array, determining the maximum subscript value in p _b corresponding to the q-th column of the wafer array as r, adding 1 to q, updating s to (r+1), and updating s and q to be 1 if q is equal to (n+1), and stopping calculation to obtain y _j (j=1, 2, … …, n) and w _j (j=1, 2, … … and n);

For any column of the wafers j (j=1, 2, … …, n) in the wafer array, determining the column number (t, t+1, … …, t+c) of the interpolation point corresponding to the column of the wafer according to the range where the subscript of the p _b corresponding to the column of the wafer is located, calculating p _at+p_a(t+1)+……+p_a(t+c) (a=1, 2, … …, m/d), and determining the calculation result as a second value p _aj (a=1, 2, … …, m/d) of the a-th row;

for any row of the wafer j in the wafer array, calculating the formula |p_ej-W/(m*n)|、|p_ej+p_(e+1)j-W/(m*n)|、|p_ej+p_(e+1)j+p_(e+2)j-W/(m*n)|、……、|p_ej+p_(e+1)j+p_(e+2)j+……+p_(m/d)j-W/(m*n)| to obtain (m/d-e+1) absolute values, determining p _aj contained in the formula corresponding to the absolute value with the smallest value in the (m/d-e+1) absolute values as p _aj corresponding to the u-th row of the wafer in the j row, determining w _uj、x_uj based on p _aj corresponding to the u-th row of the wafer in the j row, determining the largest lower index value in p _aj corresponding to the u-th row of the wafer in the j row as v, adding 1 to u, updating e to (v+1), and updating e and u to be 1, and if u is equal to (m+1), stopping calculation to obtain x _ij (i=1, 2, … …, m, j=1, 2, … …, n) and w _ij (i=1, 2, … …, m, j=1, 2, … …, n).

In a possible implementation manner, the calculating the average factor based on the radiation illumination intensity w _ij received by each wafer includes:

determining the maximum value of the radiation illumination intensity w _ij received by each wafer as a reference value;

And calculating the sum of the ratio of the radiation illumination intensity w _ij received by each wafer to the reference value, and determining the ratio of the sum to the total number of the wafers included in the wafer array as the average factor.

In a second aspect, an embodiment of the present application provides a device for determining a size of a wafer in an isotope thermo-photovoltaic system, where the determining device includes:

The device and parameter acquisition module is used for acquiring simplified component devices of the isotope thermal photovoltaic system, and intrinsic parameters, boundary condition parameters and space dimensions of materials of the simplified component devices; wherein the simplified component device comprises: a heat source, a radiator, a filter, a wafer array and a heat insulation material; the intrinsic parameters of the material include: thermal conductivity, heat capacity, material surface emissivity, transmissivity, reflectivity, density; the boundary condition parameters include: initial temperature, heat source power;

the three-dimensional model creation module is used for leading the inherent parameters, boundary condition parameters and space dimensions of the materials for simplifying the component devices into finite element software, and forming a three-dimensional model of the isotope thermal photovoltaic system in the finite element software;

The grid node dividing module is used for carrying out finite element grid division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of grid nodes;

The radiation illumination intensity acquisition module is used for acquiring the temperature value of each grid node output by the finite element software and acquiring the radiation illumination intensity of each grid node through a radiation heat flux interface;

The wafer length and width determining module is configured to introduce the radiation illumination intensity of each grid node into a topology mathematical model, and determine the length y _j of each wafer in the wafer array by adopting the following formula, with the condition that the radiation illumination intensities received by each column of wafers in the wafer array are consistent as a target condition, where the lengths y _j of the wafers located in the same column are consistent:

FindY＝{y_j},(j＝1、2、……、n)；

Min{w_j-W/n},(j＝1、2、……、n)；

FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n)；

Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n)；

And the average factor determining module is used for updating the space size of the wafer array imported into the finite element software based on the length y _j and the width x _ij of each wafer in the wafer array, updating the radiation illumination intensity w _ij received by each wafer, calculating an average factor based on the radiation illumination intensity w _ij received by each wafer, and determining the length y _j and the width x _ij of each wafer as the optimal size of the wafer if the average factor is larger than a preset threshold, otherwise, repeating the steps 2 to 6 until the average factor is larger than the preset threshold.

In one possible implementation, the wafer length and width determination module calculates W, w _ij、w_j、y_j、x_ij by:

In a third aspect, an embodiment of the present application provides an electronic device, including: a processor, a memory and a bus, the memory storing machine-readable instructions executable by the processor, the processor in communication with the memory via the bus when the electronic device is operating, the processor executing the machine-readable instructions to perform the steps of the method of determining a cell size in an isotope thermo-photovoltaic system of any of the first aspects.

In a fourth aspect, embodiments of the present application provide a computer readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of the method for determining a cell size in an isotope thermo-photovoltaic system of any of the first aspects.

The embodiment of the application provides a method and a device for determining the size of a wafer in an isotope thermal photovoltaic system, wherein the method for determining the size of the wafer comprises the following steps: step 1: acquiring a simplified component device of the isotope thermal photovoltaic system, and acquiring material inherent parameters, boundary condition parameters and space dimensions of the simplified component device; step 2: importing the intrinsic parameters, boundary condition parameters and space dimensions of the materials of the simplified component device into finite element software, and forming a three-dimensional model of the isotope thermal photovoltaic system in the finite element software; step 3: performing finite element mesh division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes; Step 4: acquiring temperature values of all grid nodes output by the finite element software, and acquiring radiation illumination intensity of all grid nodes through a radiation heat flux interface; Step 5: the radiation illumination intensity of each grid node is led into a topological mathematical model, and the length y _j of each wafer in the wafer array is determined by adopting the following formula and taking the consistent radiation illumination intensity received by each column of wafers in the wafer array as a target condition, wherein the lengths y _j of the wafers in the same column are consistent: findY = { y _j},(j＝1、2、……、n);Min{w_j -W/n }, (j=1 }, 2.… …, n); Adopting the following formula, taking the consistent radiation illumination intensity received by each wafer in the wafer array as a target condition, determining the width x_ij：FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n);Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n); of each wafer in the wafer array, which is positioned in the same column, wherein the total number of rows i in the wafer array is m, the total number of columns j is n, W is the radiation illumination intensity received by the wafer array, W _j is the radiation illumination intensity received by each column of wafers in the wafer array, w _ij is the radiation illumination intensity received by each wafer in the wafer array; Step 6: based on the length y _j and the width x _ij of each wafer in the wafer array, the space size of the wafer array imported into the finite element software is updated, the radiation illumination intensity w _ij received by each wafer is updated, Calculating an average factor based on the received radiation illumination intensity w _ij of each wafer, if the average factor is greater than a preset threshold, determining the length y _j and the width x _ij of each wafer as the optimal sizes of the wafers, otherwise, repeating the steps 2 to 6, until the average factor is greater than a preset threshold. the embodiment of the application can design the space size of each wafer in the wafer array by taking the consistent radiation illumination intensity received by each wafer as a target condition, and improves the power generation of the isotope thermal photovoltaic system.

In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 shows a flowchart of a method for determining a wafer size in an isotope thermal photovoltaic system according to an embodiment of the present application;

FIG. 2 is a flow chart of another method for determining wafer size in an isotope thermal photovoltaic system provided by an embodiment of the present application;

FIG. 3 is a schematic diagram of a wafer array according to an embodiment of the present application;

FIG. 4 is a schematic diagram of another wafer array according to an embodiment of the present application;

FIG. 5 is a flow chart of another method for determining wafer size in an isotope thermal photovoltaic system provided by an embodiment of the present application;

FIG. 6.1 illustrates the spatial dimensions of a wafer array in a pre-optimized isotope thermo-photovoltaic system provided by an embodiment of the present application;

FIG. 6.2 illustrates the radiation illumination intensity received by each wafer in the optimized front wafer array provided by an embodiment of the present application;

FIG. 6.3 illustrates specific values of the radiation illumination intensity received by each wafer in the pre-optimized wafer array according to an embodiment of the present application;

FIG. 6.4 illustrates a highly functional representation of the intensity of radiation illumination received by an array of optimized front wafers provided by an embodiment of the present application;

FIG. 6.5 illustrates the result of a highly functional expression interpolation process for optimizing the received radiation illumination intensity of a front wafer array according to an embodiment of the present application;

FIG. 6 illustrates the spatial dimensions of a wafer array in an optimized isotope thermal photovoltaic system provided by an embodiment of the present application;

FIG. 6.7 illustrates the intensity of radiation illumination received by each wafer in the optimized wafer array provided by embodiments of the present application;

FIG. 6.8 shows specific values of the intensity of radiation illumination received by each wafer in the optimized wafer array provided by the embodiments of the present application;

Fig. 7 is a schematic structural diagram of a device for determining a wafer size in an isotope thermal photovoltaic system according to an embodiment of the present application;

Fig. 8 shows a schematic diagram of an electronic device according to an embodiment of the present application.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.

The isotope thermal photovoltaic system (RTPV) has the advantages of high power generation efficiency, high power density, long service life and the like, the power generation principle is similar to that of solar power generation, the isotope thermal photovoltaic system can play an important role in space exploration, spaceflight navigation and military national defense in the future, the power generation performance of the isotope thermal photovoltaic system comprises a semiconductor wafer array, the power generation performance of the isotope thermal photovoltaic system is related to the space geometrical distribution of an isotope heat source, the matching efficiency of a radiator and a filter and the conversion efficiency of the semiconductor wafer array, and the spectra of different radiation illumination intensities are incident on the surfaces of the wafer arrays with the same performance and can also generate great difference, so that the reasonable space dimension design of the semiconductor wafer array is very important.

In the past, the design of the space size of the wafer cannot be too complicated and diversified due to the precision and cost limitation of the manufacturing process, and the wafer manufacturing technology can be used for small-batch fine production nowadays, and the wafers with different complicated structures can be manufactured conveniently, so that the wafers with different structures can be manufactured accurately.

At present, the serial-parallel effect generated by different electric powers after the wafer arrays are irradiated by different illumination intensities is rarely considered in the literature, and the wafers with the same size are generally arranged in a serial-parallel mode. Because the isotope heat source has a specified space size, when the spectrum radiated by the heat source surface radiator irradiates the surface of the photoelectric conversion wafer, the spectrum has certain space distribution, a space distribution mode with high central illumination intensity and low edge illumination intensity of the wafer array is presented, and further, the electric power output at the edge of the wafer array is lower, and after each wafer is connected in a serial-parallel mode, the power generation of the whole wafer array is reduced.

The domestic researchers disclose a method for arranging photovoltaic cells with multiple spectrums in areas where radiant light is obliquely emitted and weak light is strong and the thermal photovoltaic cell cloth piece cannot be utilized, so that the thermal photovoltaic cell can effectively utilize the area with weak radiant spectrum, and the spectrum emitted by a heat source is fully utilized to generate electricity, thereby improving the total power generation efficiency.

Based on the above-mentioned problems, the method and the device for determining the size of a wafer in an isotope thermal photovoltaic system provided by the embodiment of the application comprise the following steps: step 1: acquiring a simplified component device of the isotope thermal photovoltaic system, and acquiring material inherent parameters, boundary condition parameters and space dimensions of the simplified component device; step 2: importing the intrinsic parameters, boundary condition parameters and space dimensions of the materials of the simplified component device into finite element software, and forming a three-dimensional model of the isotope thermal photovoltaic system in the finite element software; step 3: performing finite element mesh division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes; Step 4: acquiring temperature values of all grid nodes output by the finite element software, and acquiring radiation illumination intensity of all grid nodes through a radiation heat flux interface; Step 5: the radiation illumination intensity of each grid node is led into a topological mathematical model, and the length y _j of each wafer in the wafer array is determined by adopting the following formula and taking the consistent radiation illumination intensity received by each column of wafers in the wafer array as a target condition, wherein the lengths y _j of the wafers in the same column are consistent: findY = { y _j},(j＝1、2、……、n);Min{w_j -W/n }, (j=1 }, 2.… …, n); Adopting the following formula, taking the consistent radiation illumination intensity received by each wafer in the wafer array as a target condition, determining the width x_ij：FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n);Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n); of each wafer in the wafer array, which is positioned in the same column, wherein the total number of rows i in the wafer array is m, the total number of columns j is n, W is the radiation illumination intensity received by the wafer array, W _j is the radiation illumination intensity received by each column of wafers in the wafer array, w _ij is the radiation illumination intensity received by each wafer in the wafer array; Step 6: based on the length y _j and the width x _ij of each wafer in the wafer array, the space size of the wafer array imported into the finite element software is updated, the radiation illumination intensity w _ij received by each wafer is updated, Calculating an average factor based on the received radiation illumination intensity w _ij of each wafer, if the average factor is greater than a preset threshold, determining the length y _j and the width x _ij of each wafer as the optimal sizes of the wafers, otherwise, repeating the steps 2 to 6, until the average factor is greater than a preset threshold. the embodiment of the application can design the space size of each wafer in the wafer array by taking the consistent radiation illumination intensity received by each wafer as a target condition, and improves the power generation of the isotope thermal photovoltaic system.

The present application is directed to a method for manufacturing a semiconductor device, and a semiconductor device manufactured by the method.

The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. The components of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.

For the convenience of understanding the present embodiment, a method for determining a size of a wafer in an isotope thermo-photovoltaic system disclosed in the embodiment of the present application will be described in detail.

Referring to fig. 1, fig. 1 is a flowchart of a method for determining a size of a wafer in an isotope thermal photovoltaic system according to an embodiment of the present application, where the method includes the following steps:

S101, acquiring a simplified component device of an isotope thermal photovoltaic system, and acquiring material inherent parameters, boundary condition parameters and space dimensions of the simplified component device; wherein the simplified component device comprises: a heat source, a radiator, a filter, a wafer array and a heat insulation material; the intrinsic parameters of the material include: thermal conductivity, heat capacity, material surface emissivity, transmissivity, reflectivity, density; the boundary condition parameters include: initial temperature, heat source power.

The isotope thermal photovoltaic system is an integral structure and is composed of various devices, a three-dimensional model of the isotope thermal photovoltaic system is required to be formed by using finite element software in S102, and the radiation illumination intensity of each grid node in the isotope thermal photovoltaic system is determined.

Further, referring to fig. 2, fig. 2 is a flowchart of another method for determining a wafer size in an isotope thermal photovoltaic system according to an embodiment of the present application, where the method for obtaining simplified component devices of the isotope thermal photovoltaic system includes:

S1011, decomposing the isotope thermal photovoltaic system to obtain a complete component device; wherein the complete component device comprises: a heat source with complete space structure, a radiator with complete space structure, a filter with complete space structure, a wafer array with complete space structure and a heat insulation material with complete space structure.

S1012, simplifying the complete component device, omitting the internal structure of the heat source with complete space structure, the space size structure of the radiator with complete space structure, the space size structure of the filter with complete space structure, the plate thickness and the shape of the wafer array with complete space structure, and screw threads, screw holes, chamfers, fillets, supporting pieces and heating wires included in the complete component device, so as to obtain the simplified component device of the isotope thermal photovoltaic system.

And (3) integrating the steps S1011 to S1012, and decomposing the space structure of the isotope thermal photovoltaic system based on the distribution condition of the radiation spectrum to obtain a complete component device. And further simplifying the complete component devices obtained by decomposition, and omitting the internal structure of the heat source with complete space structure, the space size structure of the radiator with complete space structure, the space size structure of the filter with complete space structure, and the plate thickness and shape of the wafer array with complete space structure on one hand. On the other hand, the small features and parts of the finite element mesh division time, the temperature value and the radiation illumination intensity calculation time of the finite element software in the steps S102 to S104 without affecting the spectrum distribution structure are compressed, wherein the small features include, but are not limited to, threads, threaded holes, chamfers, fillets, supporting members and heating wires, namely the threads, threaded holes, chamfers, fillets, supporting members and heating wires included in the complete component devices are omitted, so that the simplified component devices of the isotope thermal photovoltaic system, namely a heat source (short heat source) with a simplified space structure, a radiator (short radiator) with a simplified space structure, a filter (short filter) with a simplified space structure, a wafer array (short wafer array) with a simplified space structure and a heat insulation material (short heat insulation material) with a simplified space structure are obtained.

The heat source and the radiator in the isotope thermal photovoltaic system are defined as design domains, and the space size of each wafer in the wafer array in the isotope thermal photovoltaic system is defined as an optimization domain.

Each simplified component device corresponds to a material intrinsic parameter and a boundary condition parameter, and specifically, the material intrinsic parameters of the heat source include: thermal conductivity, heat capacity, density, boundary condition parameters of the heat source include: heat source power, initial temperature; intrinsic parameters of the material of the radiator include: thermal conductivity, heat capacity, density, material surface emissivity, and boundary condition parameters of the radiator include: an initial temperature; the intrinsic parameters of the material of the filter include: thermal conductivity, heat capacity, density, transmittance, reflectance, material surface emissivity, boundary condition parameters of the filter include: an initial temperature; the intrinsic parameters of the material of the wafer array include: thermal conductivity, heat capacity, density, material surface emissivity, boundary condition parameters of the wafer array include: an initial temperature; the intrinsic parameters of the heat insulation material include: the boundary condition parameters of the heat conductivity, heat capacity, density and material surface emissivity of the heat insulation material comprise: initial temperature.

S102, introducing the intrinsic parameters, boundary condition parameters and space dimensions of the materials of the simplified component device into finite element software, and forming a three-dimensional model of the isotope thermal photovoltaic system in the finite element software.

And (3) importing the three-dimensional model of the isotope thermal photovoltaic system into finite element software, and carrying out material parameter definition and boundary condition loading. Specifically, intrinsic parameters of materials are imported, material parameter definition is achieved, boundary condition parameters are imported, boundary condition loading is achieved, and a three-dimensional model of the isotope thermal photovoltaic system is formed based on the intrinsic parameters of the materials, the boundary condition parameters and the space size of the simplified component device.

S103, carrying out finite element mesh division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes.

According to the preset grid size, carrying out finite element grid division on the formed three-dimensional model in finite element software, forming a grid by a plurality of transverse lines and a plurality of longitudinal lines, and taking intersection points of the transverse lines and the longitudinal lines in the grid as grid nodes, wherein the transverse lines and the longitudinal lines can be straight lines or arc lines.

Further, the finite element mesh division is performed on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes, including:

When the three-dimensional model of the isotope thermal photovoltaic system is subjected to finite element grid division, the three-dimensional model can be subjected to grid division by adopting the same grid size, and the three-dimensional model can also be subjected to grid division by adopting different grid sizes. When different grid sizes are adopted, fine local devices are subjected to fine grid division, large-size devices are subjected to coarsening grid division, namely, the areas with the radiation spectrum distribution of the optical cavity (radiator and filter) are subjected to fine grid division, and other areas (heat source, wafer array and heat insulation and preservation material) are subjected to coarsening grid division, so that the calculation precision is improved, and meanwhile, the calculation time is shortened. Specifically, the radiator and the filter are subjected to finite element meshing based on a preset thinned first mesh size, and the heat source, the wafer array and the heat insulation material are subjected to finite element meshing based on a preset roughened second mesh size, wherein the density of the first mesh size is larger than that of the second mesh size, namely the density of the meshes contained in the radiator and the filter is larger than that of the meshes contained in the heat source, the wafer array and the heat insulation material.

S104, obtaining the temperature value of each grid node output by the finite element software, and obtaining the radiation illumination intensity of each grid node through a radiation heat flux interface.

And simulating the distribution condition of the radiation spectrum of the isotope thermal photovoltaic system by adopting finite element software, determining the temperature value of each grid node, and determining the radiation illumination intensity of each grid node through a radiation heat flux interface based on the temperature value of each grid node to form a txt file.

S105, importing the radiation illumination intensity of each grid node into a topological mathematical model, and determining the length y of each wafer in the wafer array by adopting the following formula under the target condition that the radiation illumination intensity received by each column of wafers in the wafer array is consistent, wherein the lengths y of the wafers in the same column are consistent:

FindY＝{y_j},(j＝1、2、……、n)；

Min{w_j-W/n},(j＝1、2、……、n)；

The method comprises the following steps of adopting the following formula, taking the consistent irradiation intensity of radiation received by each wafer in the wafer array as a target condition, and determining the width x of each wafer in the same column in the wafer array:

FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n)；

Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n)；

wherein the total number of rows i in the wafer array is m, the total number of columns j is n, W is the radiation illumination intensity received by the wafer array, W _j is the radiation illumination intensity received by each column of the wafer in the wafer array, and W _ij is the radiation illumination intensity received by each wafer in the wafer array.

The radiation illumination intensity of each grid node is led into a topology mathematical model, the space size of each wafer in the wafer array is optimized by adopting the topology mathematical model, after the size is optimized, the lengths of the wafers in the same column in the wafer array are the same, and the widths of the wafers in the same column are not necessarily the same. The specific dimension optimization thinking is as follows: firstly, the length of each column of wafers in a wafer array is determined by taking the consistent radiation illumination intensity of each column of wafers in the wafer array as a target condition, then the width of each wafer in the same column is determined by taking the consistent radiation illumination intensity of each wafer in the wafer array as a target condition, and the radiation illumination intensity of each wafer is the same based on the space size of the designed wafer array by adopting the optimization thought.

Further, the topology mathematical model is calculated W, w _ij、w_j、y_j、x_ij by:

step 5.1: and interpolating the radiation illumination intensity of each grid node by adopting a distance d aiming at each grid node to obtain a plurality of interpolation points and the numerical value of each interpolation point.

Interpolation is performed on the radiation illumination intensity of the grid nodes by adopting a distance d to obtain interpolation points and numerical values of each interpolation point, for example, for m×n grid nodes in a wafer array, interpolation is performed by adopting a distance d=0.01 to obtain 100m×100n interpolation points.

Step 5.2: for each interpolation point, the product of the value of the interpolation point and the square of the distance d is determined as the height value h _ab of the interpolation point, (a=1, 2, … …, m/d, b=1, 2, … …, n/d).

The row of interpolation points is denoted by a, the column of interpolation points is denoted by b, the m/d row and the n/d column of interpolation points are corresponding, and for each interpolation point, the product of the value of the interpolation point and d ² is determined as the height value h _ab of the interpolation point, so that (m/d) x (n/d) height values are obtained.

Step 5.3: and accumulating the height values h _ab of the interpolation points of the m/d rows and the n/d columns, and calculating to obtain W.

The radiation illumination intensity W received by the wafer array is the sum of the height values of all interpolation points, and the sum of the height values h _ab of the interpolation points of m/d rows and n/d columns is determined as W.

Step 5.4: for each column of interpolation points, the sum of the values of the column of interpolation points is calculated, resulting in a first value p _b (b=1, 2, … …, n/d) for each column of interpolation points.

Respectively calculating the formulas |p_s-W/n|、|p_s+p_s+1-W/n|、|p_s+p_s+1+p_s+2-W/n|……、|p_s+p_s+1+p_s+2+……+p_n/d-W/n| to obtain (n/d-s+1) absolute values, determining p _b contained in the formula corresponding to the absolute value with the smallest value in the (n/d-s+1) absolute values as p _b corresponding to the q-th column of the wafer array, determining w _q、y_q based on p _b corresponding to the q-th column of the wafer array, determining the maximum subscript value in p _b corresponding to the q-th column of the wafer array as r, adding 1 to q, updating s to (r+1), and updating s and q to be 1 if q is equal to (n+1), and stopping calculation to obtain y _j (j=1, 2, … …, n) and w _j (j=1, 2, … … and n).

In determining the length of the wafer in each column in the wafer array, the whole wafer array is divided into a plurality of columns of interpolation points, each column of the wafer comprises an integral number of columns of interpolation points, for example, a first column of the wafer comprises a first column of interpolation points and a second column of interpolation points. Referring to fig. 3, fig. 3 is a schematic diagram of a wafer array according to an embodiment of the present application, the wafer array 300 includes a first row of interpolation points 301, a second row of interpolation points 302, a third row of interpolation points 303, a fourth row of interpolation points 304, and a fifth row of interpolation points 305, where the first row of interpolation points 301 and the second row of interpolation points 302 together form a first row of wafers of the wafer array 300.

For each column of interpolation points, calculating the sum of the values of the column of interpolation points, and determining the calculated sum as the first value p _b (b=1, 2, … …, n/d) of the column of interpolation points, thereby obtaining n/d p _b.

For example, two parameters s and q are preset, initial values of s and q are set to 1, calculation is performed on formulas |p_s-W/n|、|p_s+p_s+1-W/n|、|p_s+p_s+1+p_s+2-W/n|、……、|p_s+p_s+1+p_s+2+……+p_n/d-W/n| to obtain (n/d-s+1) absolute values, when s=1, (n/d-s+1) absolute values are calculated |p₁-W/n|、|p₁+p₂-W/n|、|p₁+p₂+p₃-W/n|、……、|p₁+p₂+p₃+……+p_n/d-W/n|,, the value of |p ₁+p₂+p₃+p₄+p₅ -W/n| in the absolute values is minimum (s=1, n/d-s+1=n/d) at this time, p _b (i.e., p ₁+p₂+p₃+p₄+p₅) contained in |p ₁+p₂+p₃+p₄+p₅ -W/n| is determined as p _b corresponding to the first column (q=1) of the wafer array, i.e., the first column of the wafer includes the first column to the fifth column of interpolation points, (i.e., the sum of the first values of p ₁+p₂+p₃+p₄+p₅) is determined as W ₁ (q=1), the sum of the lengths of the first column to the fifth column of the interpolation points is determined as y ₁ (q=1), the first column of the wafer (q=1) is determined as p _b corresponding to the first column of the first column (q=1), and when the value of p 34r=1 is updated as p_5, i.e., the sum of the first values of the first column to the fifth column of the interpolation points is determined as p ₁+p₂+p₃+p₄+p₅ (q=1), and the value of the first column of the wafer is updated is determined as p=6.

Starting the calculation of the second column of wafer lengths, calculating |p₆-W/n|、|p₆+p₇-W/n|、|p₆+p₇+p₈-W/n|、……、|p₆+p₇+p₈+……+p_n/d-W/n|, if the value of |p ₆+p₇+p₈+p₉ -W/n| is the smallest in the (n/d-s+1) (at this time, s=6, n/d-s+1=n/d-5) absolute values, determining p _b (i.e., p ₆+p₇+p₈+p₉) contained in |p ₆+p₇+p₈+p₉ -W/n| as p _b corresponding to the second column (q=2) of wafer in the wafer array, i.e., the second column of wafer includes the sixth column to the ninth column of interpolation points, the sum of the first values of the interpolation points of the sixth column to the ninth column (i.e., the sum of p ₆+p₇+p₈+p₉) is determined as W ₂ (q=2), the sum of the lengths of the interpolation points of the sixth column to the ninth column is determined as y ₂ (q=2), the largest subscript value in p _b (i.e., p ₆+p₇+p₈+p₉) corresponding to the second column (q=2) of the wafer array is determined as r, i.e., r=9, q plus 1, q is updated as 3, s is updated as (r+1), and s is updated as 10, at this time, the calculation of the lengths of the wafers of the second column is completed, q=3, s=10.

And so on until q is equal to (n+1), at which point the length of each column of the wafer in the wafer array is determined to be complete, and the calculation is terminated.

Step 5.5: for any column of the wafers j (j=1, 2, … …, n) in the wafer array, determining the column number (t, t+1, … …, t+c) of the interpolation point corresponding to the column of the wafer according to the range where the subscript of the p _b corresponding to the column of the wafer is located, calculating p _at+p_a(t+1)+……+p_a(t+c) (a=1, 2, … …, m/d), and determining the calculation result as a second value p _aj (a=1, 2, … …, m/d) of the a-th row;

When determining the width of each wafer in the wafer array, taking each column of wafers as an object, dividing the column of wafers into a plurality of rows of interpolation points, wherein each wafer comprises an integer number of rows of interpolation points, for example, a first row of wafers comprises a first row of interpolation points and a second row of interpolation points. Referring to fig. 4, fig. 4 is a schematic diagram of another wafer array provided in an embodiment of the present application, where the wafer array 400 includes a first column of wafers 401, a second column of wafers 402, a third column of wafers 403, a fourth column of wafers 404, and a fifth column of wafers 405, each column of wafers includes five row interpolation points, and the first column of wafers 401 includes a first row interpolation point 4011, a second row interpolation point 4012, a third row interpolation point 4013, and a fourth row interpolation point 4014, and the first row interpolation point 4011 and the second row interpolation point 4012 together form a first row and a first column of wafers of the wafer array 400.

For any column of the wafers j in the wafer array, determining the column number (t, t+1, … …, t+c) of the interpolation point corresponding to the column of the wafer according to the range of the subscript of the p _b corresponding to the column of the wafer, assuming that p _b corresponding to the first column of the wafer (j=1) is p ₁+p₂+p₃+p₄+p₅ and p _b corresponding to the second column of the wafer (j=2) is p ₆+p₇+p₈+p₉, determining the column number (t, t+1, … …, t+c) of the difference point corresponding to the first column of the wafer as (1, 2,3,4, 5), determining the column number (t, t+1, … …, t+c) of the difference point corresponding to the second column of the wafer as (6, 7,8, 9), calculating p₁₁+p₁₂+p₁₃+p₁₄+p₁₅、p₂₁+p₂₂+p₂₃+p₂₄+p₂₅、p₃₁+p₃₂+p₃₃+p₃₄+p₃₅、……、p_(m/d)1+p_(m/d)2+p_(m/d)3+p_(m/d)4+p_(m/d)5, to obtain m/d numbers, determining the m/d numbers as the second number p _a1 (a=1, 2, … …, m/d) of the interpolation point of the a-th row in the first column of the wafer (j=1), and obtaining the interpolation point of the second column of the wafer (j=1); calculating p₁₆+p₁₇+p₁₈+p₁₉、p₂₆+p₂₇+p₂₈+p₂₉、p₃₆+p₃₇+p₃₈+p₃₉、……、p_(m/d)6+p_(m/d)7+p_(m/d)8+p_(m/d)9, to obtain m/d values, and determining the m/d values as second values p _a2 (a=1, 2, … …, m/d) of the a-th row of interpolation points in the second column (j=2) of the wafers, so as to obtain second values of each row of interpolation points in the second column (j=2) of the wafers.

For example, for any column of the wafer j in the wafer array, two parameters e and u are preset, initial values of e and u are set to be 1, calculation is performed on the formulas |p_ej-W/(m*n)|、|p_ej+p_(e+1)j-W/(m*n)|、|p_ej+p_(e+1)j+p_(e+2)j-W/(m*n)|、……、|p_ej+p_(e+1)j+p_(e+2)j+……+p_(m/d)j-W/(m*n)| to obtain (m/d-e+1) absolute values, when u=1, calculation |p_1j-W/(m*n)|、|p_1j+p_2j-W/(m*n)|、|p_1j+p_2j+p_3j-W/(m*n)|、……、|p_1j+p_2j+p_3j+……+p_(m/d)j-W/(m*n)|, is given by (m/d-e+1) (at this time, e=1, m/d-e+1=m/d) absolute values of |p _1j+p_2j+p_3j+p_4j+p_5j -W/(m×n) | is minimum, p _aj (i.e., p _1j+p_2j+p_3j+p_4j+p_5j) contained in |p _1j+p_2j+p_3j+p_4j+p_5j -W/(m×n) | is determined as p _aj corresponding to the first row (u=1) of the j-th column of the wafers, that is, the jth column of the first row includes first to fifth row interpolation points in the jth column of the wafer, the sum of the second values of the first to fifth row interpolation points in the jth column of the wafer is determined to be W _1j (u=1), the sum of the lengths of the first to fifth row interpolation points in the jth column of the wafer is determined to be x _1j (u=1), the maximum subscript value in p _aj corresponding to the first row (u=1) of the jth column of the wafer is determined to be v, that is, v=5, u is added with 1, that is, u is updated to 2, e is updated to (v+1), that is, e is updated to 6, at this time, the calculation of the jth column of the first row is completed, and u=2, e=6.

Starting calculation of the width of the second row of the j-th column, calculating |p_6j-W/(m*n)|、|p_6j+p_7j-W/(m*n)|、|p_6j+p_7j+p_8j-W/(m*n)|、……、|p_6j+p_7j+p_8j+……+p_(m/d)j-W/(m*n)|, if the value of |p _6j+p_7j+p_8j+p_9j -W/(m×n) | is minimum in (m/d-e+1) (at this time, e=6, m/d-e+1=m/d-5) absolute values, determining p _aj (i.e., p _6j+p_7j+p_8j+p_9j) included in |p _6j+p_7j+p_8j+p_9j -W/(m×n) | as p _aj corresponding to the second row (u=2) of the j-th column, i.e., the second row and j-th column includes the interpolation points of the sixth row to the ninth row of the j-th column, determining the sum of the second values of the sixth row to the ninth row of the interpolation points of the j-th column as W _2j (u=2), determining the sum of the lengths of the sixth row to the ninth row of the interpolation points of the j-th column as x _2j (u=2), determining the maximum width of p _aj corresponding to the second row (u=2) of the j-th column of the crystal as u=3, and updating 35 e=10+9, i.e.

And so on until u equals (m+1), at which time the width of each wafer in the j-th column of wafers in the wafer array has been determined to be complete, the calculation is terminated, at which time x _ij (i=1, 2, … …, m, j=1, 2, … …, n) and w _ij (i=1, 2, … …, m, j=1, 2, … …, n) are obtained, and y _ij＝y_j (i=1, 2, … …, m, j=1, 2, … …, n) are obtained, i.e. the width x _ij and the length y _ij of each wafer in the wafer array are obtained.

S106, based on the length y and the width x of each wafer in the wafer array, updating the space size of the wafer array imported into the finite element software, updating the radiation illumination intensity x _ij received by each wafer, calculating an average factor based on the radiation illumination intensity x _ij received by each wafer, if the average factor is larger than a preset threshold, determining the length y and the width x of each wafer as the optimal size of the wafer, otherwise, repeating S102 to S106 until the average factor is larger than the preset threshold.

After optimizing the length y and the width x of each wafer in the wafer array by adopting a topological mathematical model, obtaining the updated space size of the wafer array, replacing the original space size of the wafer array in the finite element software with the updated space size of the wafer array, obtaining the radiation illumination intensity x _ij received by each updated wafer, calculating an average factor based on x _ij, and if the average factor is larger than a preset threshold (such as 0.99), determining the length y and the width x of each wafer as the optimal size of the wafer, otherwise, repeating S102 to S106 until the average factor is larger than the preset threshold.

Further, referring to fig. 5, fig. 5 is a flowchart of another method for determining a size of a wafer in an isotope thermal photovoltaic system according to an embodiment of the present application, where the calculating an average factor based on the radiation illumination intensity x _ij received by each wafer includes:

s6011, determining the maximum value of the radiation intensity x _ij received by each wafer as a reference value.

S6012, calculating the sum of the ratio of the radiation illumination intensity x _ij received by each wafer to the reference value, and determining the ratio of the sum to the total number of the wafers included in the wafer array as the average factor.

Combining step S6011 to step S6012, taking the maximum value of the radiation illumination intensities x _ij received by the m×n wafers respectively as a reference value, calculating the ratio of the radiation illumination intensity x _ij received by each wafer to the reference value to obtain m×n ratios, calculating the sum of the m×n ratios, and determining the ratio of the sum to (m×n) as an average factor.

The method for determining the size of the wafer in the isotope thermal photovoltaic system provided by the embodiment of the application can design the space size of each wafer in the wafer array by taking the consistent radiation illumination intensity received by each wafer as a target condition, improves the power generation of the isotope thermal photovoltaic system, has better universality and can be widely used.

The embodiment is now further described, in which the spatial dimensions of the wafer array in the pre-optimization isotope thermal photovoltaic system are as shown in fig. 6.1, the length and width of each wafer in the wafer array are consistent, at this time, the radiation light intensity received by each wafer in the pre-optimization wafer array is as shown in fig. 6.2, the shallower the color is, the stronger the radiation light intensity received by the wafer is, it can be obviously seen that the radiation light intensity received by the wafer located at the center of the wafer array is strong, the radiation light intensity received by the wafer located at the edge of the wafer array is weak, the specific numerical value of the radiation light intensity received by each wafer in the pre-optimization wafer array is as shown in fig. 6.3, the overall efficiency is 0.76, the radiation light intensity distribution data received by the wafer array calculated by finite wafer software can be represented by a height function expression, the height function expression of the radiation light intensity received by the pre-optimization wafer array is as shown in fig. 6.4, the radiation light intensity received by the pre-optimization wafer array is interpolated by a height function expression of the radiation light intensity received by the wafer array is as shown in fig. 6.5, the radiation light intensity received by the wafer array is as shown in fig. 7.99, the specific numerical value of each wafer in the wafer array is as shown in the post-optimization wafer array is as shown in fig. 6.8.

Based on the same inventive concept, the embodiment of the application also provides a device for determining the size of the wafer in the isotope thermal photovoltaic system, which corresponds to the method for determining the size of the wafer in the isotope thermal photovoltaic system.

Referring to fig. 7, fig. 7 is a schematic structural diagram of a device for determining a size of a wafer in an isotope thermal photovoltaic system according to an embodiment of the present application, where the device includes:

The device and parameter acquisition module 701 is configured to acquire simplified component devices of the isotope thermal photovoltaic system, and intrinsic parameters, boundary condition parameters, and spatial dimensions of materials of the simplified component devices; wherein the simplified component device comprises: a heat source, a radiator, a filter, a wafer array and a heat insulation material; the intrinsic parameters of the material include: thermal conductivity, heat capacity, material surface emissivity, transmissivity, reflectivity, density; the boundary condition parameters include: initial temperature, heat source power;

a three-dimensional model creation module 702, configured to import the material intrinsic parameters, boundary condition parameters, and space dimensions of the simplified component device into finite element software, and form a three-dimensional model of the isotope thermal photovoltaic system in the finite element software;

A grid node dividing module 703, configured to perform finite element grid division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software, so as to form a plurality of grid nodes;

The radiation illumination intensity obtaining module 704 is configured to obtain a temperature value of each grid node output by the finite element software, and obtain radiation illumination intensity of each grid node through a radiation heat flux interface;

The wafer length and width determining module 705 is configured to introduce the radiation illumination intensity of each grid node into a topology mathematical model, and determine the length y _j of each wafer in the wafer array by using the following formula, where the lengths y _j of the wafers in the same column are consistent, with the condition that the radiation illumination intensities received by the wafers in each column in the wafer array are consistent as a target condition:

FindY＝{y_j},(j＝1、2、……、n)；

Min{w_j-W/n},(j＝1、2、……、n)；

FindX＝{x_ij},(i＝1、2、……、m,j＝1、2、……、n)；

Min{w_ij-W/(m*n)},(i＝1、2、……、m,j＝1、2、……、n)；

And an average factor determining module 706, configured to update the spatial size of the wafer array imported into the finite element software based on the length y _j and the width x _ij of each wafer in the wafer array, update the radiation illumination intensity w _ij received by each wafer, calculate an average factor based on the radiation illumination intensity w _ij received by each wafer, and determine the length y _j and the width x _ij of each wafer as the optimal size of the wafer if the average factor is greater than a preset threshold, otherwise, repeat steps 2 to 6 until the average factor is greater than the preset threshold.

In one possible embodiment, the device and parameter acquisition module 701, when acquiring simplified component devices of an isotope thermo-photovoltaic system, comprises:

In one possible implementation manner, the grid node dividing module 703 performs finite element grid division on the three-dimensional model of the isotope thermal photovoltaic system in the finite element software, so as to form a plurality of grid nodes, where the method includes:

In one possible implementation, the wafer length and width determination module 705 calculates W, w _ij、w_j、y_j、x_ij by:

In one possible implementation, the average factor determining module 706, when calculating the average factor based on the radiation illumination intensity w _ij received by each wafer, includes:

The device for determining the size of the wafer in the isotope thermal photovoltaic system provided by the embodiment of the application can design the space size of each wafer in the wafer array by taking the consistent radiation illumination intensity received by each wafer as a target condition, improves the power generation of the isotope thermal photovoltaic system, has better universality and can be widely used.

Referring to fig. 8, fig. 8 is a schematic diagram of an electronic device according to an embodiment of the present application, where the electronic device 800 includes: the device comprises a processor 801, a memory 802 and a bus 803, wherein the memory 802 stores machine-readable instructions executable by the processor 801, when the electronic device is running, the processor 801 communicates with the memory 802 through the bus 803, and the processor 801 executes the machine-readable instructions to perform the steps of the method for determining the size of a wafer in the isotope thermo-photovoltaic system as described above.

Specifically, the memory 802 and the processor 801 can be general-purpose memories and processors, which are not limited herein, and the method for determining the size of the wafer in the isotope thermo-photovoltaic system can be performed when the processor 801 runs a computer program stored in the memory 802.

Corresponding to the above method for determining the size of the wafer in the isotope thermal photovoltaic system, the embodiment of the application also provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program executes the steps of the above method for determining the size of the wafer in the isotope thermal photovoltaic system when being run by a processor.

It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described system and apparatus may refer to corresponding procedures in the foregoing method embodiments, which are not described herein again. In the several embodiments provided by the present application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. The above-described apparatus embodiments are merely illustrative, and the division of the modules is merely a logical function division, and there may be additional divisions when actually implemented, and for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some communication interface, indirect coupling or communication connection of devices or modules, electrical, mechanical, or other form.

The modules described as separate components may or may not be physically separate, and components shown as modules may or may not be physical modules, i.e., may be located in one place, or may be distributed over a plurality of network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

In addition, each functional module in each embodiment of the present application may be integrated into one processing module, or each module may exist alone physically, or two or more modules may be integrated into one module.

The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored on a non-volatile computer readable storage medium executable by a processor. Based on this understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.

Finally, it should be noted that: the above examples are only specific embodiments of the present application, and are not intended to limit the scope of the present application, but it should be understood by those skilled in the art that the present application is not limited thereto, and that the present application is described in detail with reference to the foregoing examples: any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or perform equivalent substitution of some of the technical features, while remaining within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.

Claims

1. A method for determining a size of a wafer in an isotope thermo-photovoltaic system, the method comprising:

FindY=｛y_j｝,(j=1、2、……、n)；

Min｛w_j-W/n｝,(j=1、2、……、n)；

FindX=｛x_ij｝,(i=1、2、……、m, j=1、2、……、n)；

Min｛w_ij-W/(m*n)｝,(i=1、2、……、m, j=1、2、……、n)；

2. The method of determining of claim 1, wherein the obtaining simplified components of an isotope thermo-photovoltaic system comprises:

3. The method according to claim 1, wherein the simplifying the material intrinsic parameters, the boundary condition parameters of the component device includes:

4. The method of determining according to claim 1, wherein the finite element meshing of the three-dimensional model of the isotope thermal photovoltaic system in the finite element software to form a plurality of mesh nodes includes:

5. The method of claim 1, wherein the topology mathematical model is calculated W, w _ij、w_j、y_j、x_ij by:

6. The method according to claim 1, wherein calculating the average factor based on the received radiation illumination intensity w _ij of each wafer comprises:

7. A device for determining a size of a wafer in an isotope thermo-photovoltaic system, the device comprising:

FindY=｛y_j｝,(j=1、2、……、n)；

Min｛w_j-W/n｝,(j=1、2、……、n)；

FindX=｛x_ij｝,(i=1、2、……、m, j=1、2、……、n)；

Min｛w_ij-W/(m*n)｝,(i=1、2、……、m, j=1、2、……、n)；

8. The apparatus of claim 7, wherein the die length and width determining module calculates W, w _ij、w_j、y_j、x_ij by:

9. An electronic device, comprising: a processor, a memory and a bus, the memory storing machine readable instructions executable by the processor, the processor and the memory in communication over the bus when the electronic device is running, the processor executing the machine readable instructions to perform the steps of the method of determining a cell size in an isotope thermo-photovoltaic system as claimed in any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that it has stored thereon a computer program which, when being executed by a processor, performs the steps of the method for determining the size of a wafer in an isotope thermo-photovoltaic system according to any of claims 1 to 6.