CN114326168A - Traveling wave electrode of electro-optic silicon-based modulator with suspended metal shielding wire - Google Patents
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- CN114326168A CN114326168A CN202011068865.3A CN202011068865A CN114326168A CN 114326168 A CN114326168 A CN 114326168A CN 202011068865 A CN202011068865 A CN 202011068865A CN 114326168 A CN114326168 A CN 114326168A
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Abstract
The invention discloses a traveling wave electrode of an electro-optical silicon-based modulator with a suspended metal shielding wire, and belongs to the field of electro-optical modulators. The antenna comprises a signal line, a first ground plane, an optical waveguide, a suspended metal shielding line and a stacked through hole; the signal line and the first ground plane are positioned on the same horizontal plane above the optical waveguide; the optical waveguide is simultaneously connected with the signal line and the first ground plane through a plurality of stacked through holes; the suspended metal shielding wires penetrate through gaps among the stacked through holes and are periodically arranged. The invention can simultaneously meet the design requirements of impedance matching, speed matching and lower microwave loss, introduces additional design freedom degree to the traveling wave electrode on the premise of not needing customized process steps, can more flexibly optimize the parameters of the traveling wave electrode, and effectively saves the development cost.
Description
Technical Field
The invention belongs to the field of electro-optical modulators, and particularly relates to a traveling wave electrode of an electro-optical silicon-based modulator with a suspended metal shielding line.
Background
In the design of an electro-optical silicon-based modulator, a traveling wave electrode is a commonly used technical scheme for driving an optical waveguide. In order to increase the electro-optic bandwidth of electro-optic silicon-based modulators, three factors are generally considered in the design of the traveling wave electrode. Firstly, the characteristic impedance of the traveling wave electrode is well matched with the input and output terminal impedance; secondly, the transmission speed of the microwave signal on the traveling wave electrode is well matched with the group speed of the optical signal in the optical waveguide; and thirdly, the microwave loss of the traveling wave electrode is reduced as much as possible.
Conventional traveling wave electrodes are typically coplanar waveguides or coplanar slot line structures. In both structures, the characteristic impedance of the traveling wave electrode can be easily adjusted by adjusting the width of the signal line and the distance between the signal line and the ground plane, so that the characteristic impedance is matched with the terminal impedance. However, the transmission speed of the microwave signal on the traveling wave electrode is generally faster than the group speed of the optical signal in the optical waveguide, and an additional degree of design freedom is required to reduce the transmission speed of the microwave signal on the traveling wave electrode in order to realize speed matching. In order to reduce microwave loss, further optimization of the structure of the traveling wave electrode is also needed.
In a conventional microwave integrated circuit design, there is a practice of introducing a suspended metal shielding line to reduce microwave loss caused by a substrate material. However, the electro-optical silicon-based modulator is a novel application, belongs to the interdisciplinary design of a microwave integrated circuit and integrated optics, and currently, the traveling wave electrode specially applied to the electro-optical silicon-based modulator is rarely optimized. Chinese patent CN201510970874 discloses a technical solution for dividing a traveling wave electrode into multiple sections in length direction according to a period, and connecting an inductor between a signal line of each section and a ground plane in series to raise the characteristic impedance of the traveling wave electrode, thereby implementing impedance matching. The invention patent CN201410841501 discloses a technical scheme for reducing microwave loss caused by substrate materials and improving electro-optical bandwidth by hollowing the substrate. However, in the above documents, customized process steps are required, compatibility with standard processes is not high enough in an actual production process, and manufacturing cost is significantly increased.
Disclosure of Invention
Aiming at the defects of the related art, the invention aims to provide the traveling wave electrode of the electro-optical silicon-based modulator with the suspended metal shielding wire, and aims to solve the problem that the design indexes such as impedance matching, speed matching, lower microwave loss and the like are difficult to meet simultaneously due to lower design freedom of the traditional traveling wave electrode in the electro-optical silicon-based modulator, so that the impedance matching, the speed matching and the microwave loss are simultaneously realized at lower cost on the premise of not needing a customized process step.
In order to achieve the above object, an aspect of the present invention provides an electro-optical silicon-based modulator traveling-wave electrode with a suspended metal shielding line, comprising a signal line, a first ground plane, an optical waveguide, a suspended metal shielding line, and a stacked via hole;
the signal line and the first ground plane are positioned on the same horizontal plane above the optical waveguide;
the optical waveguide is simultaneously connected with the signal line and the first ground plane through a plurality of stacked through holes;
the suspended metal shielding wires penetrate through gaps among the stacked through holes and are periodically arranged.
Further, the device also comprises a track electrode; the track electrode is located on the side of the signal line and the first ground plane, and the height of the track electrode is consistent with that of the signal line and the first ground plane.
Further, a second ground plane is also included; the second ground plane is located on the same horizontal plane with the signal line and the first ground plane, and the second ground plane is not in contact with the optical waveguide.
Further, the device also comprises a track electrode; the track electrode is located on the side of the signal line, the first ground plane and the second ground plane, and the height of the track electrode is consistent with that of the signal line, the first ground plane and the second ground plane.
Further, the buried oxide layer and the substrate layer are also included; the buried oxide layer is located below the optical waveguide.
Furthermore, the size of the suspended metal shielding wire, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wire and the signal wire in the vertical direction can be adjusted.
Furthermore, the suspended metal shielding wire is formed by one or more layers of metal at the lowest level in a CMOS process or a silicon-based photoelectric process;
when the suspended metal shielding wire is composed of multiple layers of metals, the metals of different layers are connected through the through holes.
Furthermore, the signal line and the ground plane are formed by one or more layers of metal at the highest level in a CMOS process or a silicon-based photoelectric process;
when the signal line and the ground plane are formed by multiple layers of metal, the metal of different layers is connected through the through hole.
Through the technical scheme, compared with the prior art, the characteristic impedance of the transmission line can be effectively adjusted by changing the signal line and the space between the signal line and the ground plane; the periodic arrangement of the suspended metal shielding wires can form a slow wave effect, and the transmission speed of microwave signals in the traveling wave electrode is reduced; by changing the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the ground plane in the vertical direction, the transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted to be matched with the group speed of the optical signal in the optical waveguide; on the other hand, the suspended metal shielding wire limits the electric field distribution of the microwave signal between the signal wire and the suspended metal shielding wire, so that the electric field distribution leaked into the substrate is reduced, and the microwave loss is reduced.
The invention can simultaneously meet the design requirements of impedance matching, speed matching and lower microwave loss, introduces additional design freedom degree to the traveling wave electrode on the premise of not needing customized process steps, can more flexibly optimize the parameters of the traveling wave electrode, and effectively saves the development cost.
Drawings
Fig. 1 is a three-dimensional structure diagram of a coplanar waveguide type traveling wave electrode of an electro-optical silicon-based modulator with a suspended metal shielding line according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a coplanar waveguide type traveling wave electrode of an electro-optical silicon-based modulator with suspended metal shielding lines according to an embodiment of the present invention, where (a), (b), and (c) are respectively a front view, a side view, and a top view;
fig. 3 is a schematic diagram of a coplanar slot-type traveling wave electrode of an electro-optical silicon-based modulator with suspended metal shielding lines according to a second embodiment of the present invention, wherein (a), (b), (c), and (d) are respectively a front view, a side view, a top view, and a perspective view;
fig. 4 is a schematic diagram of a coplanar waveguide type traveling wave electrode of an electro-optical silicon-based modulator with suspended metal shielding lines and track electrodes according to a third embodiment of the present invention, where (a), (b), (c), and (d) are respectively a front view, a side view, a top view, and a perspective view;
fig. 5 is a schematic diagram of coplanar slot-line type traveling wave electrodes of an electro-optical silicon-based modulator with suspended metal shielding lines and track electrodes according to a fourth embodiment of the present invention, where (a), (b), (c), and (d) are respectively a front view, a side view, a top view, and a perspective view.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In the following description, it is noted that descriptions about directions, such as an outer side, an inner side, an upper side or a lower side, are described with reference to the directions shown in the drawings for convenience of explanation and explanation, but the present invention is not limited thereto, and may be varied according to specific applications and installation positions of the described components or devices.
The invention provides an electro-optic silicon-based modulator traveling wave electrode with a suspended metal shielding line, which comprises a signal line, a first ground plane, an optical waveguide, a suspended metal shielding line and a stacked through hole;
the signal line and the first ground plane are positioned on the same horizontal plane above the optical waveguide;
the optical waveguide is simultaneously connected with the signal line and the first ground plane through a plurality of stacked through holes;
the suspended metal shielding wires penetrate through gaps among the stacked through holes and are periodically arranged.
Further, the device also comprises a track electrode; the track electrode is located on the side of the signal line and the first ground plane, and the height of the track electrode is consistent with that of the signal line and the first ground plane.
Further, a second ground plane is also included; the second ground plane is located on the same horizontal plane with the signal line and the first ground plane, and the second ground plane is not in contact with the optical waveguide.
Further, the device also comprises a track electrode; the track electrode is located on the side of the signal line, the first ground plane and the second ground plane, and the height of the track electrode is consistent with that of the signal line, the first ground plane and the second ground plane.
Further, the buried oxide layer and the substrate layer are also included; the buried oxide layer is located below the optical waveguide.
Furthermore, the size of the suspended metal shielding wire, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wire and the signal wire in the vertical direction can be adjusted.
The traveling wave electrode can be in a coplanar waveguide type and a coplanar slot line type;
the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the ground plane in the vertical direction can be freely adjusted to meet different design requirements;
the suspended metal shielding wire can be formed by one or more layers of metal at the lowest layer in a CMOS process or a silicon-based photoelectric process, and when the suspended metal shielding wire is formed by the plurality of layers of metal, the metals at different layers are connected through the through hole;
the signal line and the ground plane can be formed by one or more layers of metal at the highest level in a CMOS process or a silicon-based photoelectric process, and when the signal line and the ground plane are formed by the plurality of layers of metal, the metal at different layers is connected through the through hole;
the substrate layer may have a higher resistivity or may have a lower resistivity.
The contents of the above embodiments will be described below with reference to several preferred embodiments.
Example one
The schematic diagram of the coplanar waveguide type traveling wave electrode of the electro-optical silicon-based modulator with the suspended metal shielding line provided by the embodiment of the invention is shown in fig. 1 and fig. 2 in the description of the attached drawings. The integrated circuit is composed of a signal line 101, a first ground plane 102, a second ground plane 103, an optical waveguide 104, a buried oxide layer 105, a substrate layer 106, a suspended metal shielding line 107 (including 107_1 to 107_ n, where n is an integer greater than 1), and a stacked via 108 (including 108_1 to 108_ m, where m is an integer greater than 1). The optical waveguide is positioned above the buried oxide layer, is formed by combining P-type doped and N-type doped silicon materials and is connected with the signal line and the first ground plane above the optical waveguide through the stacked through hole. The second ground plane is not connected to the optical waveguide. The signal line is located on the same horizontal plane as the first and second ground planes. The suspended metal shielding line is positioned between the optical waveguide and the horizontal plane and is not contacted with the stacked through hole. Wherein, the stacked through holes are formed by stacking through holes between adjacent layers. Because adjacent layers can be connected through the through holes, but non-adjacent layers cannot be directly connected through the through holes, the through holes between the layers can only be stacked to form stacked through holes.
The optical waveguide can be equivalent to a PN junction working in a reverse bias state, has certain resistance and capacitance, and is used as a distributed load of the traveling wave electrode. By changing the width of the signal line and the distance between the signal line and the ground plane, the characteristic impedance of the transmission line can be effectively adjusted. The periodic arrangement of the suspended metal shielding wires can form a slow wave effect, and the transmission speed of microwave signals in the traveling wave electrode is reduced. By changing the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the distance between the suspended metal shielding wires and the ground plane in the vertical direction, the transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted to be matched with the group speed of the optical signal in the optical waveguide. On the other hand, the suspended metal shielding wire limits the electric field distribution of the microwave signal between the signal wire and the suspended metal shielding wire, so that the electric field distribution leaked into the substrate is reduced, and the microwave loss is reduced.
Example two
The schematic diagram of the coplanar slot line type traveling wave electrode of the electro-optical silicon-based modulator with the suspended metal shielding line provided by the embodiment of the invention is shown in fig. 3 in the description of the attached drawings. The buried oxide layer is composed of a signal line 201, a first ground plane 202, an optical waveguide 204, a buried oxide layer 205, a substrate layer 206, a suspended metal shielding line 207 (including 207_1 to 207_ n, wherein n is an integer greater than 1), and a stacked via 208 (including 208_1 to 208_ m, wherein m is an integer greater than 1). The optical waveguide is positioned above the buried oxide layer, is formed by combining P-type doped and N-type doped silicon materials and is connected with the signal line and the first ground plane above the optical waveguide through the stacked through hole. The signal line and the first ground plane are located on the same horizontal plane. The suspended metal shielding line is positioned between the optical waveguide and the horizontal plane and is not contacted with the stacked through hole.
The optical waveguide can be equivalent to a PN junction working in a reverse bias state, has certain resistance and capacitance, and is used as a distributed load of the traveling wave electrode. By changing the width of the signal line and the distance between the signal line and the ground plane, the characteristic impedance of the transmission line can be effectively adjusted. The periodic arrangement of the suspended metal shielding wires can form a slow wave effect, and the transmission speed of microwave signals in the traveling wave electrode is reduced. By changing the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the distance between the suspended metal shielding wires and the ground plane in the vertical direction, the transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted to be matched with the group speed of the optical signal in the optical waveguide. On the other hand, the suspended metal shielding wire limits the electric field distribution of the microwave signal between the signal wire and the suspended metal shielding wire, so that the electric field distribution leaked into the substrate is reduced, and the microwave loss is reduced.
EXAMPLE III
The schematic diagram of the coplanar waveguide type traveling wave electrode of the electro-optical silicon-based modulator with the suspended metal shielding wire and the track electrode, which is provided by the embodiment of the invention, is shown in fig. 4 in the description of the attached drawings. The planar waveguide antenna is composed of a signal line 301, a first ground plane 302, a second ground plane 303, an optical waveguide 304, a buried oxide layer 305, a substrate layer 306, a suspended metal shielding line 307 (including 307_1 to 307_ n, where n is an integer greater than 1), a stacked via 308 (including 308_1 to 308_ m, where m is an integer greater than 1), and rail electrodes 309_1 to 309_ k (k is an integer greater than 1). The optical waveguide is positioned above the buried oxide layer, is formed by combining P-type doped and N-type doped silicon materials and is connected with the signal line and the first ground plane above the optical waveguide through the stacked through hole. The second ground plane is not connected to the optical waveguide. The suspended metal shielding wire is positioned between the optical waveguide and the signal line and the ground plane, and the suspended metal shielding wire is not contacted with the stacked through hole. The track electrode is located signal line, the side of first ground plane and second ground plane, and the height of track electrode keeps unanimous with the height of signal line and first ground plane, second ground plane.
The optical waveguide can be equivalent to a PN junction working in a reverse bias state, has certain resistance and capacitance, and is used as a distributed load of the traveling wave electrode. By changing the width of the signal line and the distance between the signal line and the ground plane, the characteristic impedance of the transmission line can be effectively adjusted. The track electrode can be equivalent to a distributed capacitance load, and the characteristic capacitance of the transmission line can be effectively increased. The transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted by changing the size of the track electrode and the distance between two adjacent track electrodes. The periodic arrangement of the suspended metal shielding wires can form a slow wave effect, and the transmission speed of microwave signals in the traveling wave electrode is reduced. By changing the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the distance between the suspended metal shielding wires and the ground plane in the vertical direction, the transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted to be matched with the group speed of the optical signal in the optical waveguide. On the other hand, the suspended metal shielding wire limits the electric field distribution of the microwave signal between the signal wire and the suspended metal shielding wire, so that the electric field distribution leaked into the substrate is reduced, and the microwave loss is reduced.
Example four
The schematic diagram of the coplanar waveguide type traveling wave electrode of the electro-optical silicon-based modulator with the suspended metal shielding line provided by the embodiment of the invention is shown in fig. 5 in the description of the attached drawings. It is composed of a signal line 401, a first ground plane 402, an optical waveguide 404, a buried oxide layer 405, a substrate layer 406, a floating metal shield line 407 (including 407_1 to 407_ n, where n is an integer greater than 1), a stacked via 408 (including 107_1 to 408_ m, where m is an integer greater than 1), and rail electrodes 409_1 to 409_ k (k is an integer greater than 1). The optical waveguide is positioned above the buried oxide layer, is formed by combining P-type doped and N-type doped silicon materials and is connected with the signal line and the first ground plane above the optical waveguide through the stacked through hole. The second ground plane is not connected to the optical waveguide. The suspended metal shielding wire is positioned between the optical waveguide and the signal line and the ground plane, and the suspended metal shielding wire is not contacted with the stacked through hole. The track electrode is located signal line, the side of first ground plane and second ground plane, and the height of track electrode keeps unanimous with the height of signal line and first ground plane, second ground plane.
The optical waveguide can be equivalent to a PN junction working in a reverse bias state, has certain resistance and capacitance, and is used as a distributed load of the traveling wave electrode. By changing the width of the signal line and the distance between the signal line and the ground plane, the characteristic impedance of the transmission line can be effectively adjusted. The track electrode can be equivalent to a distributed capacitance load, and the characteristic capacitance of the transmission line can be effectively increased. The transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted by changing the size of the track electrode and the distance between two adjacent track electrodes. The periodic arrangement of the suspended metal shielding wires can form a slow wave effect, and the transmission speed of microwave signals in the traveling wave electrode is reduced. By changing the size of the suspended metal shielding wires, the distance between two adjacent suspended metal shielding wires and the distance between the suspended metal shielding wires and the signal wire and the distance between the suspended metal shielding wires and the ground plane in the vertical direction, the transmission speed of the microwave signal in the traveling wave electrode can be effectively adjusted to be matched with the group speed of the optical signal in the optical waveguide. On the other hand, the suspended metal shielding wire limits the electric field distribution of the microwave signal between the signal wire and the suspended metal shielding wire, so that the electric field distribution leaked into the substrate is reduced, and the microwave loss is reduced.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. The traveling wave electrode of the electro-optic silicon-based modulator with the suspended metal shielding line is characterized by comprising a signal line, a first ground plane, an optical waveguide, the suspended metal shielding line and a stacking through hole;
the signal line and the first ground plane are positioned on the same horizontal plane above the optical waveguide;
the optical waveguide is simultaneously connected with the signal line and the first ground plane through a plurality of stacked through holes;
the suspended metal shielding wires penetrate through gaps among the stacked through holes and are periodically arranged.
2. The electro-optic silicon-based modulator traveling-wave electrode of claim 1, further comprising
A rail electrode; the track electrode is located on the side of the signal line and the first ground plane, and the height of the track electrode is consistent with that of the signal line and the first ground plane.
3. The electro-optic silicon-based modulator traveling-wave electrode of claim 1, further comprising
A second ground plane; the second ground plane is located on the same horizontal plane with the signal line and the first ground plane, and the second ground plane is not in contact with the optical waveguide.
4. The electro-optic silicon-based modulator traveling-wave electrode of claim 3, further comprising
A rail electrode; the track electrode is located on the side of the signal line, the first ground plane and the second ground plane, and the height of the track electrode is consistent with that of the signal line, the first ground plane and the second ground plane.
5. The electro-optic silicon-based modulator traveling-wave electrode of any one of claims 1-4, further comprising
An oxygen buried layer and a substrate layer; the buried oxide layer is located below the optical waveguide.
6. The traveling-wave electrode of the electro-optic silicon-based modulator according to any one of claims 1-4, wherein the size of the suspended metal shielding lines, the distance between two adjacent suspended metal shielding lines and the vertical distance between the suspended metal shielding lines and the signal line can be adjusted.
7. The electro-optic silicon-based modulator traveling-wave electrode of any one of claims 1-4, wherein the suspended metal shield line is formed of the lowest one or more layers of metal in a CMOS process or a silicon-based electro-optic process;
when the suspended metal shielding wire is composed of multiple layers of metals, the metals of different layers are connected through the through holes.
8. The electro-optic silicon-based modulator traveling-wave electrode of any one of claims 1-4, wherein the signal line and the ground plane are comprised of the highest one or more layers of metal in a CMOS process or a silicon-based electro-optic process;
when the signal line and the ground plane are formed by multiple layers of metal, the metal of different layers is connected through the through hole.
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| US20040155728A1 (en) * | 2003-02-07 | 2004-08-12 | Cheung Tak Shun | Transmission lines and components with wavelength reduction and shielding |
| US20090249610A1 (en) * | 2008-04-03 | 2009-10-08 | International Business Machines Corporation | Methods of fabricating coplanar waveguide structures |
| CN102468269A (en) * | 2010-11-01 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Slot-shielded coplanar strip-line compatible with CMOS processes |
| CN106646931A (en) * | 2016-12-21 | 2017-05-10 | 武汉邮电科学研究院 | GSG track type radio-frequency electrode, silicon-based traveling wave electrode light modulator and preparation method |
| CN112415786A (en) * | 2019-08-22 | 2021-02-26 | 苏州旭创科技有限公司 | Silicon-based electro-optic modulator |
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- 2020-09-30 CN CN202011068865.3A patent/CN114326168A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040155728A1 (en) * | 2003-02-07 | 2004-08-12 | Cheung Tak Shun | Transmission lines and components with wavelength reduction and shielding |
| US20090249610A1 (en) * | 2008-04-03 | 2009-10-08 | International Business Machines Corporation | Methods of fabricating coplanar waveguide structures |
| CN102468269A (en) * | 2010-11-01 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Slot-shielded coplanar strip-line compatible with CMOS processes |
| CN106646931A (en) * | 2016-12-21 | 2017-05-10 | 武汉邮电科学研究院 | GSG track type radio-frequency electrode, silicon-based traveling wave electrode light modulator and preparation method |
| CN112415786A (en) * | 2019-08-22 | 2021-02-26 | 苏州旭创科技有限公司 | Silicon-based electro-optic modulator |
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