CN114323408A - Multi-range multi-sensitivity pressure MEMS chip - Google Patents
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- CN114323408A CN114323408A CN202111346507.9A CN202111346507A CN114323408A CN 114323408 A CN114323408 A CN 114323408A CN 202111346507 A CN202111346507 A CN 202111346507A CN 114323408 A CN114323408 A CN 114323408A
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- 239000003990 capacitor Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 14
- 238000005457 optimization Methods 0.000 description 12
- 238000009530 blood pressure measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007306 functionalization reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a multi-range multi-sensitivity pressure MEMS chip, which comprises a substrate, wherein a capacitive sensor component and a piezoresistive sensor component are arranged on the substrate; the capacitive sensor assembly comprises a capacitor upper polar plate and a capacitor lower polar plate which are arranged on the substrate, and an insulation gap is formed between the capacitor upper polar plate and the capacitor lower polar plate; and, the piezoresistive sensor assembly includes a piezoresistive unit disposed on the capacitor upper plate or the capacitor lower plate. The multi-range multi-sensitivity pressure MEMS chip provided by the invention can realize measurement of capacitance type small pressure and measurement of piezoresistive type large pressure.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a multi-range multi-sensitivity pressure MEMS chip.
Background
At present, the mainstream pressure MEMS (micro electro mechanical system) sensors in the market mainly have two sensing modes, namely a capacitive type sensing mode and a piezoresistive type sensing mode. The piezoresistive pressure sensor has the advantages of high linearity, easy signal processing and the like; but the chip is sensitive to stress and greatly influenced by packaging, and zero drift and temperature drift can be caused by generated mechanical stress or thermal mismatch between the chip and a packaging material; in addition, the temperature coefficient of the piezoresistance is large, and a large amount of time and cost are consumed for calibration and compensation; in addition, the piezoresistive elements are prone to leakage and surface fouling, which presents stability problems.
The performance of the capacitive pressure sensor is related to the mechanical characteristics of the material, and the capacitive pressure sensor is relatively more stable, high in sensitivity and low in noise; but its working principle is naturally non-linear and is also susceptible to electromagnetic interference in the environment.
Generally speaking, the piezoresistive MEMS sensor has an advantage in linearity in a wide range, and the capacitive MEMS sensor has an advantage in high sensitivity and low noise in a small range.
However, in the actual use process, some devices for monitoring the motion state of the human body need to measure the pressure in a wider range, for example, the climbing height monitoring depends on high-precision measurement of the air pressure, and the high-sensitivity measurement of the air pressure is needed in a small range; the pressure measurement in a wide range is needed for water depth monitoring, and the sensitivity requirement is relatively low, so that the requirement of multi-range and multi-sensitivity pressure measurement is met in reality.
Based on the above technical requirements, a multi-range and multi-sensitivity pressure measurement chip is needed.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a multi-range multi-sensitivity pressure measurement chip.
The multi-range multi-sensitivity pressure MEMS chip comprises a substrate, wherein a capacitive sensor component and a piezoresistive sensor component are arranged on the substrate; wherein the content of the first and second substances,
the capacitance type sensor assembly comprises a capacitance upper polar plate and a capacitance lower polar plate which are arranged on the substrate, and an insulation gap is formed between the capacitance upper polar plate and the capacitance lower polar plate; and the number of the first and second electrodes,
the piezoresistive sensor assembly comprises a piezoresistive unit, and the piezoresistive unit is arranged on the capacitor upper polar plate or the capacitor lower polar plate.
In addition, it is preferable that the capacitor upper plate and the capacitor lower plate are both disposed inside the substrate, and the piezoresistive unit is disposed on top of the capacitor upper plate; and the number of the first and second electrodes,
a capacitor cavity is arranged in the insulation gap.
In addition, preferably, a piezoresistive cavity is formed in the substrate at a position below the lower electrode plate of the capacitor; wherein the content of the first and second substances,
the piezoresistive cavity is communicated with the outside or is a vacuum cavity.
In addition, preferably, a channel is further formed in the substrate, and the capacitor cavity is communicated with the outside through the channel.
Preferably, the non-capacitive cavity in the insulation gap is filled with an insulating medium.
In addition, it is preferable that the capacitor lower plate is disposed inside the substrate, the capacitor upper plate is disposed above the substrate through a support, and the piezoresistive unit is disposed on top of the capacitor lower plate; and the number of the first and second electrodes,
and a capacitor cavity is formed in the lower electrode plate of the capacitor.
In addition, preferably, a piezoresistive cavity is formed in the substrate at a position below the lower electrode plate of the capacitor; wherein the content of the first and second substances,
the piezoresistive cavity is communicated with the outside or is a vacuum cavity.
In addition, preferably, a channel is further formed in the substrate, and the capacitor cavity is communicated with the outside through the channel.
In addition, it is preferable that a capacitance electrode and a piezoresistive electrode are provided on the top surface of the substrate, wherein,
the capacitance electrode is electrically connected with the capacitance type sensor assembly, and the piezoresistive electrode is electrically connected with the piezoresistive type sensor assembly.
In addition, preferably, the capacitor upper electrode plate and the capacitor lower electrode plate are both made of polysilicon.
Compared with the prior art, the multi-range multi-sensitivity pressure MEMS chip has the following beneficial effects:
the multi-range multi-sensitivity pressure MEMS chip provided by the invention is based on the advantages of piezoresistive pressure MEMS and capacitive pressure MEMS in different range ranges, and designs the MEMS chip for measuring small pressure in a capacitive mode and measuring large pressure in a piezoresistive mode by combining the capacitive sensor component and the piezoresistive sensor component, so that the pressure MEMS chip can realize high-sensitivity measurement of air pressure in a small range and can also realize low-sensitivity measurement of air pressure in a large range; in addition, the MEMS chip adopts conductive polysilicon as an electrode plate of the capacitor, and meanwhile, the polysilicon material has piezoresistive characteristics, so that the piezoresistive device manufactured by the MEMS chip has more advantages than a monocrystalline silicon piezoresistive device; the polysilicon can be used as capacitance electrode and pressure resistance, and two structures are longitudinally arranged, so that the integration, miniaturization and multi-range and multi-sensitivity multi-functionalization of the device can be realized.
To the accomplishment of the foregoing and related ends, one or more aspects of the invention comprise the features hereinafter fully described and particularly pointed out in the claims. The following description and the annexed drawings set forth in detail certain illustrative aspects of the invention. These aspects are indicative, however, of but a few of the various ways in which the principles of the invention may be employed. Further, the present invention is intended to include all such aspects and their equivalents.
Drawings
Other objects and results of the present invention will become more apparent and more readily appreciated as the same becomes better understood by reference to the following description and appended claims, taken in conjunction with the accompanying drawings. In the drawings:
FIG. 1 is a block diagram of a multi-range multi-sensitivity pressure MEMS chip according to a first embodiment of the present invention;
FIG. 2 is a block diagram of a multi-range multi-sensitivity pressure MEMS chip in accordance with a second embodiment of the present invention;
FIG. 3 is a first structural optimization diagram of a multi-range multi-sensitivity pressure MEMS chip according to a first embodiment of the present invention;
FIG. 4 is a second structural optimization diagram of the multi-range multi-sensitivity pressure MEMS chip of the first embodiment provided by the present invention;
FIG. 5 is a third structural optimization diagram of the multi-range multi-sensitivity pressure MEMS chip provided by the present invention;
FIG. 6 is a first structural optimization diagram of a multi-range multi-sensitivity pressure MEMS chip in accordance with a second embodiment of the present invention;
FIG. 7 is a second structural optimization diagram of a multi-range multi-sensitivity pressure MEMS chip according to a second embodiment of the present invention;
fig. 8 is a third structural optimization diagram of a multi-range multi-sensitivity pressure MEMS chip according to a second embodiment of the present invention.
Reference numerals: the capacitor comprises a substrate 1, a capacitor lower electrode plate 2, a capacitor upper electrode plate 3, a first capacitor cavity 4, an insulating medium 5, a piezoresistive unit 6, a capacitor electrode 7, a piezoresistive electrode 8, a piezoresistive hollow cavity 9, a first channel 10, a piezoresistive vacuum cavity 11, a second capacitor cavity 12, a support 13 and a second channel 14.
The same reference numbers in all figures indicate similar or corresponding features or functions.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Fig. 1 shows a structure of a multi-range multi-sensitivity pressure MEMS chip of a first embodiment provided by the present invention, fig. 3 shows a first structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the first embodiment provided by the present invention, fig. 4 shows a second structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the first embodiment provided by the present invention, and fig. 5 shows a third structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the first embodiment provided by the present invention.
As shown together with fig. 1 to 5, the multi-range multi-sensitivity pressure MEMS chip provided by the present invention includes a substrate 1 (which may be a silicon substrate) for supporting and protecting the foundation, and a capacitive sensor component and a piezoresistive sensor component are disposed on the substrate 1 (where the substrate 1 refers to the inside or the top of the substrate 1).
The capacitance type sensor assembly can realize pressure measurement with high sensitivity and low noise in a small range, and specifically comprises an upper capacitance pole plate 3 and a lower capacitance pole plate 2 which are arranged on a substrate 1, wherein a certain insulation gap is reserved between the upper capacitance pole plate 3 and the lower capacitance pole plate 2 to prevent short circuit caused by direct contact of the upper capacitance pole plate 3 and the lower capacitance pole plate 2 due to overlarge pressure.
The piezoresistive sensor assembly can measure pressure in a wide range, and specifically includes a piezoresistive unit 6, where the piezoresistive unit 6 may be disposed on the capacitor upper plate 3 or the capacitor lower plate 2, depending on the actual situation.
In a first embodiment of the present invention, the multi-range multi-sensitivity pressure MEMS chip provided by the present invention can be specifically configured as the following structure:
the capacitor upper plate 3 and the capacitor lower plate 2 are both arranged inside the substrate 1, and the piezoresistive unit 6 is arranged on the top of the capacitor upper plate 3 (or other suitable positions, such as inside and the like); and, a capacitor cavity is provided within the insulating gap.
In the actual measurement process, electric capacity upper plate 3 and electric capacity lower plate 2 keep apart through electric capacity cavity and insulating medium 5 in the insulating gap (insulating medium 5 fills the position of the non-electric capacity cavity in the insulating gap), and, the electric capacity cavity provides the space of electric capacity upper plate 3 activity from top to bottom, along with ambient pressure's change, make electric capacity upper plate 3 deformation, this moment, electric capacity upper plate 3 and 2 interval changes of electric capacity lower plate, and then lead to electric capacity to change, thereby realize the measurement to ambient pressure.
It should be noted that, in this first embodiment, the capacitor cavity is defined as the first capacitor cavity 4, and may be provided as a separate vacuum chamber (as shown in fig. 1 and 3); it is also possible to provide a channel (in this first embodiment, defined as a first channel 10) within the substrate 1 and then communicate with the outside (air) through the first channel 10 (see fig. 4 and 5); if the first capacitor cavity 4 is an independent vacuum cavity, the capacitance absolute pressure measurement of the external pressure can be realized; if the first capacitor cavity 4 is communicated with the outside through the channel, the capacitor upper polar plate 3 senses the pressure difference between the upper part and the lower part of the membrane surface, thereby realizing the capacitance type pressure difference measurement of the outside pressure.
Of course, a piezoresistive cavity can be formed in the substrate 1 below the lower capacitor plate 2; moreover, the piezoresistive unit 6 is manufactured at a proper position (such as the top) of the capacitor upper polar plate 3, the insulating medium 5 and the capacitor lower polar plate 2 jointly form a sensitive film for sensing the external pressure, and a piezoresistive cavity is formed below the sensitive film; in the actual use process, the whole sensitive membrane is deformed by large external pressure, and the piezoresistive unit 6 outputs signals by stress, so that the external pressure is measured.
It should be noted that the piezoresistive cavity may be configured as a closed independent vacuum cavity (i.e., a piezoresistive vacuum cavity 11, as shown in fig. 1 and 4), or may be directly communicated with the outside air in a hollow manner (i.e., a piezoresistive hollow cavity 9, as shown in fig. 3 and 5), wherein if the piezoresistive cavity is configured as the piezoresistive vacuum cavity 11, resistive absolute pressure measurement of the outside pressure may be implemented; if the piezoresistive cavity is set to be a piezoresistive hollowed-out cavity 9 (namely, the silicon substrate 1 below the sensitive film is etched and hollowed out), at the moment, the sensitive film senses the pressure difference between the upper surface and the lower surface of the film, and therefore the resistance type pressure difference measurement of the external pressure is achieved.
It should be noted that, when the capacitive absolute pressure measurement is performed, the upper electrode plate 3 of the capacitor is thin and is easily affected by pressure, so as to sense low pressure; when the resistance type absolute pressure measurement is carried out, the whole sensitive membrane is thick and relatively insensitive to pressure, and is used for measuring high pressure.
In addition, fig. 2 shows a structure diagram of a multi-range multi-sensitivity pressure MEMS chip of a second embodiment provided by the present invention, fig. 6 shows a first structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the second embodiment provided by the present invention, fig. 7 shows a second structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the second embodiment provided by the present invention, fig. 8 shows a third structure optimization structure of the multi-range multi-sensitivity pressure MEMS chip of the second embodiment provided by the present invention, in a second specific embodiment of the present invention, the multi-range multi-sensitivity pressure MEMS chip provided by the present invention may be specifically configured as the following structure:
the capacitor lower plate 2 may be disposed inside the substrate 1, the capacitor upper plate 3 may be disposed above the substrate 1 through a preset support 13, and the piezoresistive unit 6 is disposed on top of (or other suitable position, such as inside, etc.) the capacitor lower plate 2; a capacitor cavity (in the first embodiment, the capacitor cavity is defined as a second capacitor cavity 12) is formed inside the capacitor lower plate 2.
In the actual measurement process, upper portion is through the fixed electric capacity upper plate 3 of support piece 13, because electric capacity bottom plate 2 is middle fretwork's structure (inside is formed with second electric capacity cavity 12) for electric capacity bottom plate 2's thickness is thinner, can respond to the change of outside less pressure, thereby realizes the measurement to external pressure.
It should be noted that, in this second embodiment, the second capacitor cavity 12 may be provided as a separate vacuum chamber (as shown in fig. 2 and 6); it is also possible to provide a channel (in this second embodiment, defined as a second channel 14) in the substrate 1 and then communicate with the outside (air) through the second channel 14 (see fig. 7); if the second capacitor cavity 12 is an independent vacuum cavity, the capacitive absolute pressure measurement of the external pressure can be realized; if the second capacitor cavity 12 is communicated with the outside through the second channel 14, the capacitor lower electrode plate 2 senses the pressure difference between the upper part and the lower part of the film surface, thereby realizing the capacitance type pressure difference measurement of the outside pressure.
Of course, a piezoresistive cavity can be formed in the substrate 1 below the lower capacitor plate 2; moreover, the piezoresistive unit 6 is manufactured at a proper position (such as the top) of the capacitor lower polar plate 2, the capacitor lower polar plate 2 forms a sensitive film for sensing the external pressure, and a piezoresistive cavity is formed below the sensitive film; in the actual use process, the whole sensitive membrane is deformed by large external pressure, and the piezoresistive unit 6 outputs signals by stress, so that the external pressure is measured. And, because the lower part of the lower polar plate 2 of the capacitor is a piezoresistive cavity, the pressure makes the distance between the upper polar plate and the lower polar plate of the capacitor change, namely the capacitance value changes, thereby realizing the conversion from the pressure signal to the capacitance signal.
It should be noted that the piezoresistive cavity may be set as a closed independent vacuum cavity (i.e., a piezoresistive vacuum cavity 11, as shown in fig. 2 and 7), or may be directly conducted with the outside air in a hollow manner (i.e., a piezoresistive hollow cavity 9, as shown in fig. 6 and 8), wherein if the piezoresistive cavity is set as the piezoresistive vacuum cavity 11, resistive absolute pressure measurement of the outside pressure may be implemented; if the piezoresistive cavity is set to be a piezoresistive hollowed-out cavity 9 (namely, the silicon substrate 1 below the sensitive film is etched and hollowed out), at the moment, the sensitive film senses the pressure difference between the upper surface and the lower surface of the film, and therefore the resistance type pressure difference measurement of the external pressure is achieved.
In addition, in order to realize the electrical connection between the capacitive sensor component and the piezoresistive sensor component in the multi-range multi-sensitivity pressure MEMS chip provided by the invention and an external device, a capacitive electrode 7 and a piezoresistive electrode 8 are arranged on the top surface of the substrate 1, wherein the capacitive electrode 7 is electrically connected with the capacitive sensor component, and the piezoresistive electrode 8 is electrically connected with the piezoresistive sensor component.
Specifically, two capacitance electrodes 7 and two piezoresistive electrodes 8 may be provided, the two capacitance electrodes 7 are respectively electrically connected with the upper and lower electrode plates of the capacitor, and the two piezoresistive electrodes 8 are respectively electrically connected with the positive and negative electrodes of the piezoresistive unit 6.
In a preferred embodiment of the present invention, the capacitor upper plate 3 and the capacitor lower plate 2 can be made of polysilicon, the MEMS chip uses conductive polysilicon as the electrode plate of the capacitor, and the polysilicon material has piezoresistive characteristics, so that the piezoresistive device made by the MEMS chip has more advantages than the single-crystal silicon piezoresistive device; the polysilicon is used as the capacitance electrode 7 and the piezoresistance, and the two structures are longitudinally arranged, so that the integration, the miniaturization and the multi-range and multi-sensitivity multi-functionalization of the device can be realized.
The multi-range multi-sensitivity pressure MEMS chip according to the present invention is described above by way of example with reference to fig. 1 to 8. However, it will be appreciated by those skilled in the art that various modifications may be made to the multi-range multi-sensitivity pressure MEMS chip proposed by the present invention without departing from the scope of the present invention. Therefore, the scope of the present invention should be determined by the contents of the appended claims.
Claims (10)
1. A multi-range multi-sensitivity pressure MEMS chip comprises a substrate and is characterized in that a capacitive sensor component and a piezoresistive sensor component are arranged on the substrate; wherein the content of the first and second substances,
the capacitance type sensor assembly comprises a capacitance upper polar plate and a capacitance lower polar plate which are arranged on the substrate, and an insulation gap is formed between the capacitance upper polar plate and the capacitance lower polar plate; and the number of the first and second electrodes,
the piezoresistive sensor assembly comprises a piezoresistive unit, and the piezoresistive unit is arranged on the capacitor upper polar plate or the capacitor lower polar plate.
2. The multi-range multi-sensitivity pressure MEMS chip of claim 1,
the capacitor upper polar plate and the capacitor lower polar plate are both arranged inside the substrate, and the piezoresistive unit is arranged at the top of the capacitor upper polar plate; and the number of the first and second electrodes,
a capacitor cavity is arranged in the insulation gap.
3. The multi-range multi-sensitivity pressure MEMS chip of claim 2,
a piezoresistive cavity is formed in the position, below the capacitor lower polar plate, of the substrate; wherein the content of the first and second substances,
the piezoresistive cavity is communicated with the outside or is a vacuum cavity.
4. The multi-range multi-sensitivity pressure MEMS chip of claim 3,
and a channel is also formed in the substrate, and the capacitor cavity is communicated with the outside through the channel.
5. The multi-range multi-sensitivity pressure MEMS chip of claim 3,
and the position of the non-capacitance cavity in the insulation gap is filled with an insulation medium.
6. The multi-range multi-sensitivity pressure MEMS chip of claim 1,
the lower capacitor electrode plate is arranged inside the substrate, the upper capacitor electrode plate is arranged above the substrate through a support piece, and the piezoresistive unit is arranged at the top of the lower capacitor electrode plate; and the number of the first and second electrodes,
and a capacitor cavity is formed in the lower electrode plate of the capacitor.
7. The multi-range multi-sensitivity pressure MEMS chip of claim 6,
a piezoresistive cavity is formed in the position, below the capacitor lower polar plate, of the substrate; wherein the content of the first and second substances,
the piezoresistive cavity is communicated with the outside or is a vacuum cavity.
8. The multi-range multi-sensitivity pressure MEMS chip of claim 7,
and a channel is also formed in the substrate, and the capacitor cavity is communicated with the outside through the channel.
9. The multi-range multi-sensitivity pressure MEMS chip of any one of claims 1 to 8,
a capacitive electrode and a piezoresistive electrode are provided on the top surface of the substrate, wherein,
the capacitance electrode is electrically connected with the capacitance type sensor assembly, and the piezoresistive electrode is electrically connected with the piezoresistive type sensor assembly.
10. The multi-range multi-sensitivity pressure MEMS chip of claim 9,
the capacitor upper electrode plate and the capacitor lower electrode plate are both made of polycrystalline silicon.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115979500A (en) * | 2023-03-17 | 2023-04-18 | 成都凯天电子股份有限公司 | Double-air-pressure-cavity core body, pressure scanning valve and preparation method |
| CN116046226A (en) * | 2023-01-07 | 2023-05-02 | 常州大学怀德学院 | MEMS pressure sensor for depth-to-width ratio etching |
| CN116659711A (en) * | 2023-07-28 | 2023-08-29 | 苏州敏芯微电子技术股份有限公司 | MEMS pressure sensor and electronic equipment |
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