CN114300945A - Preparation method of ridge waveguide structure for GaAs edge-emitting laser - Google Patents

Preparation method of ridge waveguide structure for GaAs edge-emitting laser Download PDF

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CN114300945A
CN114300945A CN202210222512.7A CN202210222512A CN114300945A CN 114300945 A CN114300945 A CN 114300945A CN 202210222512 A CN202210222512 A CN 202210222512A CN 114300945 A CN114300945 A CN 114300945A
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gaas
layer
ridge waveguide
substrate
emitting laser
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赵涛
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Guangdong Leading Technology Institute Co ltd
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Guangdong Leading Technology Institute Co ltd
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Abstract

The invention discloses a preparation method of a ridge waveguide structure for a GaAs edge-emitting laser, which is characterized in that on the premise of not changing the size of a chip, a high aluminum layer is oxidized by a wet oxidation process to form an oxide film to limit an electric field and form high-density current, so that the output threshold current is reduced, and the output of optical power is improved.

Description

Preparation method of ridge waveguide structure for GaAs edge-emitting laser
Technical Field
The invention belongs to the technical field of semiconductor wet oxidation, and particularly relates to a preparation method of a ridge waveguide structure for a GaAs edge-emitting laser.
Background
As is known, in the GaAs edge-emitting process technology, ICP (inductively coupled plasma) dry etching, wet etching, and the like are used, and generally, ICP dry etching, wet etching, and a combination of ICP and wet etching are used to etch the ridge waveguide. After the common ridge waveguide is etched, a P-face electrode is evaporated, an N-face electrode is evaporated after grinding, an antireflection film and a high-reflection film are evaporated after cleavage, and power output is realized through testing by a testing machine. There are different ways to improve the GaAs edge emission power, which can be realized by epitaxial design, or by designing different ridge waveguide sizes. The traditional method is used for manufacturing ridge waveguides with different line widths, and the photoetching capacity is high. For example, whether the photoetching machine is made in China or imported, exposure accuracy, line width and the like, the technology can make the size of the ridge waveguide larger, has low requirement on the capability of the photoetching machine, and realizes the research of the light power of different light emitting apertures by controlling the size of the light emitting aperture through the oxidized aperture.
Disclosure of Invention
The invention aims to provide a preparation method of a ridge waveguide structure for a GaAs edge-emitting laser, which forms high-density current by a wet oxidation process on the premise of not changing the size of a chip, thereby reducing the output threshold current and improving the output of optical power.
The technical scheme adopted by the invention is that the preparation method of the ridge waveguide structure for the GaAs edge-emitting laser is implemented according to the following steps:
step 1, growing a buffer layer GaAs and a lower limiting layer n-Al on one surface of a substrate in sequence by an epitaxial technology x GaAs，x0.1-0.0.7% lower waveguide layer Al y GaAs，y0.1-0.5 concentration, quantum well InGaAs, and upper waveguide layer Al z GaAs，zHigh Al layer with concentration of 0.1-0.5 p GaAs，pUpper limiting layer P-Al with concentration not lower than 0.97 q GaAs，qThe concentration is 0.1-0.7, the P-GaAs layer is doped with Be, and the doping concentration is 6
Figure 998723DEST_PATH_IMAGE002
1019Forming an epitaxial structure;
step 2, after chemically cleaning the epitaxial structure, carrying out epitaxial gluing on the P-GaAs layer, carrying out first photoetching, and then carrying out dry etching to etch the high-aluminum Al layer p Stopping after the GaAs bottom to form a convex structure, and removing the photoresist of the convex structure for cleaning;
step 3, placing the epitaxial structure and the substrate obtained in the step 2 into a wet oxidation furnace, and adjusting parameters in the wet oxidation furnace to the high-aluminum Al layer p Oxidizing GaAs to form an oxide layer;
step 4, depositing SiO on the surface of the epitaxial structure obtained in the step 32Forming a passivation layer of SiO2Film, SiO directly over bump structure2Coating the surface of the film with glue to perform a second photolithography from SiO2Dry etching the surface of the film until the P-GaAs layer is doped with Be to form a primary opening, and cleaning after removing the photoresist;
step 5, coating glue at the primary opening position of the epitaxial structure to perform a third photoetching, forming a secondary opening after developing, sequentially evaporating and plating metal Ti, Pt and Au on the surface of the substrate along the directions of the secondary opening and the primary opening, removing the glue and cleaning;
step 6, bonding and grinding the back surface of the substrate, debonding, cleaning, sequentially evaporating and plating metal Ni, Au, Ge, Ni and Au on the back surface of the substrate, and performing RTP annealing;
and 7, cleaving the epitaxial structure and the substrate into bars, fixing the cross sections of the two sides of the bars, wherein one surface is a front cavity surface, and the other surface is a rear cavity surface, and respectively evaporating an antireflection film and a high-reflection film.
The invention is also characterized in that:
the specific process for adjusting the parameters in the wet oxidation furnace in the step 3 comprises the following steps: the cavity temperature is 380-: 1.5-2.5L/min, and the oxidation time is 20-50 min.
And 5, sequentially evaporating and plating metal Ti, Pt and Au in the step 5, wherein the thickness of each layer is as follows: ti100nm, Pt100nm, Au300 nm.
The RTP annealing in the step 6 comprises the following specific processes: annealing temperature: 350-400 ℃ and the annealing time is 30-60S.
Step 6 bonding the back side of the ground substrate means grinding to 120 nm.
And 6, sequentially evaporating and plating metal Ni, Au, Ge, Ni and Au on the back of the substrate, wherein the thicknesses of all layers are as follows: ni50nm, Au200nm, Ge100nm, Ni50nm, Au300 nm.
The invention has the beneficial effects that:
according to the preparation method of the ridge waveguide structure for the GaAs edge-emitting laser, provided by the invention, on the premise of not changing the size of a chip, the high aluminum layer is oxidized by a wet oxidation process to form an oxide film limiting electric field, so that high-density current is formed, the output threshold current is reduced, and the output of optical power is improved.
Drawings
FIG. 1 is a schematic view of an epitaxial structure obtained in step 1 of the present invention;
FIG. 2 is a schematic view of an epitaxial structure obtained after a first photolithography and oxide film formation in the present invention;
FIG. 3 is a process of depositing a passivation layer SiO on the surface of the epitaxial structure in the present invention2A schematic view of a film structure;
FIG. 4 is a schematic structural view of a ridge waveguide structure fabricated using a prior art technique;
FIG. 5 is a schematic structural diagram of a ridge waveguide structure manufactured by the method for manufacturing a ridge waveguide structure for a GaAs edge-emitting laser according to the present invention.
In the figure, 1 is a substrate, 2 is a growth buffer layer GaAs, 3 is a lower limiting layer n-Al x GaAs, 4, lower waveguide layer Al y GaAs, 5 quantum well InGaAs, 6, upper waveguide layer Al z GaAs, 7. high Al layer p GaAs, 8. Upper confinement layer P-Al q GaAs, 9.P-GaAs layer doped Be, 10.SiO2Film, 11. oxide layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a preparation method of a ridge waveguide structure for a GaAs edge-emitting laser, which is implemented according to the following steps:
step 1, growing a buffer layer GaAs 2 and a lower limiting layer n-Al on one surface of a substrate 1 in sequence by an epitaxial technology x GaAs 3，x0.1-0.0.7% lower waveguide layer Al y GaAs 4，y0.1-0.5 concentration, quantum well InGaAs 5, and upper waveguide layer Al z GaAs 6，zHigh Al layer with concentration of 0.1-0.5 p GaAs 7，pUpper limiting layer P-Al with concentration not lower than 0.97 q GaAs 8，qThe concentration is 0.1-0.7, the P-GaAs layer is doped with Be9, and the doping concentration is 6
Figure 393933DEST_PATH_IMAGE002
1019Forming an epitaxial structure, as shown in fig. 1;
step 2, after chemically cleaning the epitaxial structure, carrying out epitaxial gluing on the P-GaAs layer, carrying out first photoetching, and then carrying out dry etching to etch the high-aluminum Al layer p Stopping after the bottom of the GaAs7 to form a convex structure, and removing photoresist and cleaning the convex structure; the photoresist removing and cleaning is to remove the photoresist coated during photoetching, has no foreign matters, and can not introduce impurities when the next process is carried out.
And 3, placing the epitaxial structure obtained in the step 2 and the substrate 1 into a wet oxidation furnace, and adjusting parameters in the wet oxidation furnace in a specific process: the cavity temperature is 380-: 1.5-2.5L/min, oxidizing for 20-50 min to form an oxide layer 11, as shown in FIG. 2;
the reaction equation for hyperoxia oxidation is as follows: the oxidation time is changed to realize the change of the oxidation aperture, the size of the luminous aperture is changed, and the change of the optical power is realized:
Figure 208305DEST_PATH_IMAGE003
when in oxidation, the whole high aluminum layer is not oxidized, and the middle part can be electrified.
Step 4, depositing SiO on the surface of the epitaxial structure obtained in the step 32Forming a passivation layer of SiO2 Film 10, SiO directly over the raised structures2Coating the surface of the film 10 with glue to perform a second photolithography from SiO2Dry etching the surface of the film 10 until the P-GaAs layer is doped with Be9 to form a primary opening, and cleaning after removing the photoresist;
step 5, gluing the primary opening position of the epitaxial structure to perform a third photoetching, forming a secondary opening after developing, and sequentially evaporating metal Ti, Pt and Au on the surface of the substrate 1 along the directions of the secondary opening and the primary opening, wherein the thicknesses of all layers are as follows: removing photoresist and cleaning Ti100nm, Pt100nm and Au300 nm;
and 6, bonding and grinding the back surface of the substrate 1 to 120nm, debonding, cleaning, and sequentially evaporating and plating metal Ni, Au, Ge, Ni and Au on the back surface of the substrate 1, wherein the thicknesses of all layers are as follows: ni50nm, Au200nm, Ge100nm, Ni50nm, Au300nm, and the annealing temperature: 350-400 ℃, and the annealing time is 30-60S; annealing process is influenced, annealing conditions are not proper, voltage is higher, and light power is influenced.
And 7, cleaving the epitaxial structure and the substrate 1 into bars, fixing the cross sections of the two sides of the bars, wherein one surface is a front cavity surface, and the other surface is a rear cavity surface, and respectively evaporating an antireflection film and a high-reflection film.
When the LED lamp is used, the LED lamp is oxidized into the luminous apertures with different lengths by a wet method, and under the same current, the threshold current with small luminous aperture is low and the optical power is high; in the present invention, tertiary light is usedEtching technology, wherein a first photoetching is carried out until the bottom of the high-aluminum layer forms a raised structure so as to etch the structure of the ridge waveguide; the purpose of the second photolithography is to etch away the SiO above the P-GaAs layer of the ridge waveguide2And the third photoetching is to evaporate metal on the exposed P-GaAs surface of the ridge waveguide.
According to the principle of the GaAs product ridge waveguide, the ridge waveguide is firstly made through first photoetching, namely, the GaAs edge-emitting laser can not be formed without the ridge waveguide. The second photolithography is preceded by depositing a layer of SiO on the entire surface of the substrate, including the surface of the ridge waveguide2And the passivation layer is used for protection. Then, the second photoetching is to make a pattern on the ridge waveguide, and after the pattern is made, ICP dry etching is carried out to remove SiO2. The third photoetching is to evaporate and plate on the ridge waveguide to make the electrode.
Examples
The ridge waveguide structure preparation method for the GaAs edge-emitting laser respectively adopts the ridge waveguide structure preparation method of the invention and the ridge waveguide structure prepared by the prior art, the adopted substrate 1 and the prepared epitaxial structure are the same, the width of the convex structure is 20 microns, and the ridge waveguide structure prepared by the prior art is directly deposited on the surface of the convex structure for depositing SiO2Forming a passivation layer of SiO2The thin film 10 and the method for evaporating the electrode are the same as the method in the invention, the obtained ridge waveguide structure is shown in fig. 4, and in the invention, in order to obtain the ridge waveguide with the light-emitting aperture of 3 microns, the ridge waveguide with the light-emitting aperture of 3 microns can be accurately realized after a period of wet oxidation, as shown in fig. 5.
The ridge waveguide is formed by evaporating a P electrode on P-GaAs, the N-GaAs is formed by evaporating an N electrode, and current flows from the P electrode to the N electrode through the ridge waveguide. The current density was: area of current/ridge waveguide, the area of ridge waveguide being long
Figure 30767DEST_PATH_IMAGE002
The width is wide, after wet oxidation, the size of the emitting aperture becomes small, and the effective conducting area of the ridge waveguide becomes small, namely the area of the ridge waveguide becomes small, under the condition that the current is not changed, the current density becomes large, the threshold current becomes small, and the optical power becomes large.
Through the comparison, the ridge waveguide structure preparation method for the GaAs edge-emitting laser provided by the invention has the advantages that on the premise of not changing the size of a chip, the high aluminum layer is oxidized by a wet oxidation process to form an oxide film limiting electric field, so that high-density current is formed, the output threshold current is reduced, and the output of optical power is improved.

Claims (6)

1. The preparation method of the ridge waveguide structure for the GaAs edge-emitting laser is characterized by comprising the following steps of:
step 1, growing a buffer layer GaAs (2) and a lower limiting layer n-Al on one surface of a substrate (1) in sequence by an epitaxial technology x GaAs（3），x0.1-0.0.7% lower waveguide layer Al y GaAs（4），y0.1-0.5 concentration, quantum well InGaAs (5), and upper waveguide layer Al z GaAs（6），zHigh Al layer with concentration of 0.1-0.5 p GaAs（7），pUpper limiting layer P-Al with concentration not lower than 0.97 q GaAs（8），qThe concentration is 0.1-0.7, the P-GaAs layer is doped with Be (9) and the doping concentration is 6
Figure 776115DEST_PATH_IMAGE002
1019Forming an epitaxial structure;
step 2, after chemically cleaning the epitaxial structure, carrying out epitaxial gluing on the P-GaAs layer, carrying out first photoetching, and then carrying out dry etching to etch the high-aluminum Al layer p Stopping after the bottom of the GaAs (7) to form a convex structure, and removing the photoresist of the convex structure for cleaning;
step 3, placing the epitaxial structure and the substrate (1) obtained in the step 2 into a wet oxidation furnace, and adjusting parameters in the wet oxidation furnace to the high-aluminum Al layer p GaAs (7) is oxidized to form an oxide layer (11);
step 4, depositing SiO on the surface of the epitaxial structure obtained in the step 32Forming a passivation layer of SiO2Film (10), SiO directly over the raised structure2Coating the surface of the film (10) with glue to perform a second photolithography from SiO2Dry etching the surface of the film (10) to the P-GaAs layer doped Be (10)9) Forming a primary opening, and cleaning after removing the photoresist;
step 5, coating glue at the primary opening position of the epitaxial structure to perform a third photoetching, forming a secondary opening after developing, sequentially evaporating and plating metal Ti, Pt and Au on the surface of the substrate (1) along the directions of the secondary opening and the primary opening, removing the glue and cleaning;
step 6, bonding and grinding the back surface of the substrate (1), debonding, cleaning, sequentially evaporating and plating metal Ni, Au, Ge, Ni and Au on the back surface of the substrate (1), and performing RTP annealing;
and 7, cleaving the epitaxial structure and the substrate (1) into bars, fixing the cross sections of the two sides of the bars, wherein one surface is a front cavity surface, and the other surface is a rear cavity surface, and respectively evaporating an antireflection film and a high-reflection film.
2. The method for preparing the ridge waveguide structure for the GaAs edge-emitting laser according to claim 1, wherein the specific process of adjusting the parameters in the wet oxidation furnace in the step 3 is as follows: the cavity temperature is 380-: 1.5-2.5L/min, and the oxidation time is 20-50 min.
3. The method for preparing a ridge waveguide structure for a GaAs edge-emitting laser according to claim 1, wherein thicknesses of layers when the metals Ti, Pt and Au are sequentially evaporated in step 5 are as follows: ti100nm, Pt100nm, Au300 nm.
4. The method for preparing the ridge waveguide structure for the GaAs edge-emitting laser according to claim 1, wherein the specific RTP annealing process in the step 6 comprises: annealing temperature: 350-400 ℃ and the annealing time is 30-60S.
5. The method for preparing a ridge waveguide structure for GaAs edge-emitting laser according to claim 1, wherein the back surface of the bonded abrasive substrate (1) of step 6 is ground to 120 nm.
6. The method for preparing the ridge waveguide structure for the GaAs edge-emitting laser according to claim 1, wherein the thicknesses of the layers in the step 6 are as follows when metal Ni, Au, Ge, Ni and Au are sequentially evaporated on the back surface of the substrate (1): ni50nm, Au200nm, Ge100nm, Ni50nm, Au300 nm.
CN202210222512.7A 2022-03-09 2022-03-09 Preparation method of ridge waveguide structure for GaAs edge-emitting laser Pending CN114300945A (en)

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CN110880676A (en) * 2019-11-08 2020-03-13 度亘激光技术（苏州）有限公司 Preparation method of semiconductor laser
CN110880675A (en) * 2019-11-25 2020-03-13 江苏华兴激光科技有限公司 Single longitudinal mode edge-emitting laser with lateral photogate oxidation limiting structure and preparation method thereof
CN111711070A (en) * 2020-08-18 2020-09-25 江西铭德半导体科技有限公司 Edge-emitting single-mode laser and manufacturing method
CN111755950A (en) * 2020-06-30 2020-10-09 中国科学院半导体研究所 DFB laser with electrode partially covering ridge

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187837A (en) * 1997-09-08 1999-03-30 Fujitsu Ltd Semiconductor laser and manufacture thereof
US20010034071A1 (en) * 2000-02-22 2001-10-25 Satoshi Arakawa Quantum-confinement stark effect optical modulator
JP2002289976A (en) * 2001-03-23 2002-10-04 Ricoh Co Ltd Semiconductor structure, its manufacturing method and semiconductor laser element, semiconductor laser array as well as optical interconnection system and optical lan system
CN1467890A (en) * 2002-06-20 2004-01-14 富士施乐株式会社 Surface emitting semiconductor laser and method of fabricating the same
CN1588717A (en) * 2004-07-16 2005-03-02 北京工业大学 High efficiency high power multiple wave length tunnel cascade multiple active area vertical chamber surface transmitting laser
CN1901299A (en) * 2005-07-22 2007-01-24 海德威电子工业股份有限公司 Vertical cavity surface emitting laser and method for fabricating the same
CN101192739A (en) * 2006-12-01 2008-06-04 中国科学院半导体研究所 Vertical cavity radiation laser including high adulteration tunnel structure
CN104269738A (en) * 2014-10-11 2015-01-07 长春理工大学 Wavelength-stable semiconductor laser unit with cavity surface optical grating
CN107069431A (en) * 2017-06-05 2017-08-18 太原理工大学 A kind of GaAs base edge-emitting laser preparation methods based on 3D printing
CN110880676A (en) * 2019-11-08 2020-03-13 度亘激光技术（苏州）有限公司 Preparation method of semiconductor laser
CN110880675A (en) * 2019-11-25 2020-03-13 江苏华兴激光科技有限公司 Single longitudinal mode edge-emitting laser with lateral photogate oxidation limiting structure and preparation method thereof
CN111755950A (en) * 2020-06-30 2020-10-09 中国科学院半导体研究所 DFB laser with electrode partially covering ridge
CN111711070A (en) * 2020-08-18 2020-09-25 江西铭德半导体科技有限公司 Edge-emitting single-mode laser and manufacturing method

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Application publication date: 20220408