CN114293260A - Directional growth method of bismuth telluride thermoelectric material - Google Patents
Directional growth method of bismuth telluride thermoelectric material Download PDFInfo
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Abstract
The present invention relates to the field of semiconductors. A directional growth method of a bismuth telluride thermoelectric material comprises the following steps: preparing a bismuth telluride thermoelectric material to be zone-melted, and sealing the bismuth telluride thermoelectric material in a heat-resistant pipe fitting, wherein the heat-resistant pipe fitting is a quartz pipe or a heat-resistant glass pipe; placing the heat-resistant pipe fitting into a vacuum cavity, wherein a vertically arranged rotary supporting shaft is installed in the vacuum cavity, the heat-resistant pipe fitting is vertically installed at the top of the rotary supporting shaft, and a water cooling channel is arranged in the rotary supporting shaft; step three, preparing Bi by using a zone melting method2Te3And (4) crystals. This patent has improved the radial homogeneity that is heated of crystal material, has controlled the crystal heat conduction direction among the crystallization process, has increased the ascending temperature gradient of growth direction, has improved the thermoelectric property of crystal material, has prevented effectively because of growing the borderThe corner cracking or the corner defect of the thermoelectric element caused by the inclined surface.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to Bi2Te3A method for directionally growing a polycrystalline thermoelectric material.
Background
Thermoelectric material is key material of thermoelectric refrigeration or power generation device, and is based on Bi2Te3(namely the bismuth telluride thermoelectric material) is still the best commercial material at the room temperature, and the index for representing the thermoelectric performance of the material is a figure of merit ZT, wherein
(α: the seebeck coefficient of the material,. sigma: the electrical conductivity of the material,. kappa: the thermal conductivity of the material); since Bi2Te3The crystal structure, the atomic arrangement mode and the type of interatomic bonds determine the characteristics of anisotropy, the crystal structure has the maximum performance merit value in the direction parallel to a basal plane (00l), and the difference of thermoelectric performance in the directions parallel to the cleavage direction and perpendicular to the cleavage direction is reported in the literature:
conductivity: sigma///σ⊥≈4～10
Seebeck coefficient: alpha is alpha///α⊥≈1
Thermal conductivity: kappa///κ⊥≈3～5
Coefficient of merit: z///Z⊥≈2
In order to obtain excellent material properties, crystals are generally grown from a melt by the Bridgman method or zone melting method to obtain crystals having a certain degree of orientation.
The Bridgman and the local melting growth of Bi are introduced in 1991 & lt semiconductor refrigeration and application technology & gt, published by Shanghai university of transportation, Xudesh2Te3Method of crystallization of Bi2Te3The arrangement mode and the bonding form among crystal atoms have the characteristics that the (00l) plane obtains better thermoelectric performance, but is easy to be cleaved along the (00l) plane. The direction of the (00l) plane is related to the shape of the solid-liquid interface at the time of crystal growth, and the ideal solid-liquid growth interface is a plane, and the normal direction thereof is parallel to the desired growth direction, and conventional Bi2Te3The melt growth method does not control the cooling and heat transfer directions during solidification, and ideal growth conditions cannot be obtained, and no matter the Bridgman method or the zone melting method is influenced by a heat exchange mode, crystallization heat cannot be quickly led out from the axial direction, so that a solid-liquid growth interface of the melt growth method is often a center-to-melt inner protrusionThe curved surface of (2) is influenced by the non-uniform circumferential heat exchange, the growth interface is often asymmetric and sometimes inclined, and because a large enough temperature gradient cannot be provided in the axial direction, the segregation effect of impurities is more prominent, the distribution of the impurities along the growth direction of the crystal is often non-uniform, the performance difference between the first end and the last end is large, the thermoelectric performance of the crystal grown under the condition is often influenced to a certain extent, and the generation of the inclined cracks of the thermoelectric element is easy to occur to cause the incomplete edges and corners of the element. Affecting the performance of the device.
The Chinese patent with publication number CN1488572A disclosing a preparation method of a bismuth telluride based thermoelectric material and the Chinese patent with publication number CN101403139A disclosing a preparation method of a bismuth telluride based sintered material both introduce sintering methods for preparing thermoelectric materials, and both methods use zone-melting crystal bars as raw materials.
The patent publication CN1488572A adopts a powder sintering method, which cannot obtain crystals with a certain degree of orientation and has limited thermoelectric properties.
The patent with publication number CN101403139A adopts a direct hot pressing method of block after zone melting, which avoids the loss of material orientation degree caused by powder pressing in the former method, but the processing capability is limited by equipment, and the scale production with low cost is difficult to realize with low efficiency.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a directional growth method of a bismuth telluride thermoelectric material, which aims to solve at least one technical problem.
In order to achieve the purpose, the invention provides a directional growth method of a bismuth telluride thermoelectric material, which is characterized by comprising the following steps:
step one, preparing the bismuth telluride thermoelectric material (namely Bi) to be zone-melted2Te3Based thermoelectric material), the bismuth telluride thermoelectric material is sealed in a heat-resistant pipe fitting, the bismuth telluride thermoelectric material is in vacuum or inert gas, and the heat-resistant pipe fitting is a quartz pipe or a heat-resistant glass pipe;
placing the heat-resistant pipe fitting into a vacuum cavity, wherein a vertically arranged rotating support shaft is installed in the vacuum cavity, the heat-resistant pipe fitting is vertically installed at the top of the rotating support shaft, and a water cooling channel is arranged in the rotating support shaft;
step three, preparing Bi by using a zone melting method2Te3A crystal;
vacuum degree of the vacuum chamber: less than or equal to 100 Pa;
rotating speed of the rotating support shaft: 2rpm-20 rpm;
the zone melting temperature is controlled as follows: 650-750 deg.C
The flow of water cooling liquid of the water cooling channel is controlled as follows: 5L/min-20L/min.
This patent passes through the crystal rotation, vacuum thermal-insulated, the crystal growth method of axial water-cooling, the homogeneity that the crystal material is radially heated has been improved, the crystal heat conduction direction of the in-process of having controlled effectively, the ascending temperature gradient in growth direction has been increased, the shape at growth interface has obtained effectual control, be favorable to the directional solidification of crystal, can obtain the crystal material that orientation is good, the thermoelectric property of crystal material has been improved, thermoelectric element corner fracture or the incomplete problem of corner because of growth interface slope has been prevented effectively. The bismuth telluride thermoelectric material sealed by the heat-resistant pipe fitting can be a commercially available bismuth telluride thermoelectric material, and crystals with good orientation can be obtained through oriented growth.
Preferably, the support shaft comprises an inner pipe and an outer pipe which are arranged inside and outside, the upper end of the outer pipe is sealed, a support piece is installed at the upper end of the outer pipe and used for supporting and fixing the heat-resistant pipe fitting, the inner pipe is communicated up and down, the top of the inner pipe is lower than the top of an inner cavity of the outer pipe, a rotary joint is installed at the bottom of the support shaft, a water inlet and a water outlet are installed on the rotary joint, the water outlet is communicated with the inner wall of the inner pipe, and an area between the inner pipe and the outer pipe is communicated with the water inlet;
the supporting shaft is rotatably connected with the vacuum cavity through a bearing.
The water cooling of the supporting shaft is convenient to realize.
Further preferably, the vacuum chamber comprises a base, a quartz tube and a top cover; the quartz tube is arranged between the top cover and the base, the rotary support shaft, the base, the quartz tube and the top cover enclose a vacuum cavity, and the base is provided with an air exhaust hole communicated with the vacuum cavity;
a heater is arranged on the periphery of the quartz tube;
the base is rotatably connected with a supporting shaft through a bearing.
Further preferably, the heaters all move upward at a constant speed. The moving speed of the heater is 10 mm/h-35 mm/h.
Further preferably, the upper end of the quartz tube is provided with a centering mechanism for keeping the heat-resistant tube member in a vertical state.
Further preferably, the aligning mechanism comprises at least three aligning blocks which are uniformly distributed in the circumferential direction, and the inner walls of the aligning blocks are cylindrical surfaces matched with the outer walls of the heat-resistant pipe fittings;
the outer side wall of the aligning block is an inclined surface which is inclined inwards from top to bottom;
an upper flange plate is mounted at the top of the quartz tube, the upper flange plate is detachably connected with the top cover, and a sealing ring is arranged between the upper flange plate and the top cover;
the upper flange plate is rotationally connected with a disc through a bearing;
the inner wall circumference of disc is seted up and is inserted the spacing groove of aligning piece, the inner wall of spacing groove be equipped with the lateral wall assorted inclined plane of aligning piece, heat-resisting pipe fitting with aligning piece synchronous revolution.
Further preferably, there are three of the centering blocks.
According to the principle that a circle is determined by three points, three positioning grooves (inclined groove) corresponding to the inclined planes of the centering block are uniformly distributed on the inner cylindrical surface of the disc, and the angle of the heat-resisting pipe fitting in the vertical direction is adjusted to be coaxial with the rotating shaft by the up-and-down movement of the centering block in the inclined groove.
The slope of the inner wall of the limiting groove is matched with the slope of the outer side wall of the centering block.
Further preferably, when zone melting is carried out in the second step, the width of the melting zone is 20 mm-40 mm. The material is locally melted in the zone melting process, the material near the position of the heater is in a liquid state, and the width of the liquid state area is called as the width of the melting zone. The heater moves from bottom to top at a uniform speed, the melting zone moves upwards, the material growing in zone melting is below the melting zone, and the material growing in zone melting is above the melting zone.
Further preferably, the moving speed of the heater is 10 mm/hr to 35 mm/hr.
Further preferably, the vacuum degree of the vacuum cavity is 100 Pa;
the rotating speed of the rotating support shaft is 20 rpm;
the flow rate of the water cooling liquid is 20L/min;
the moving speed of the heater was 10 mm/hr.
The maximum temperature difference obtained by testing the data is maximum, and the thermoelectric property is excellent.
Further preferably, the base is mounted on a lower fixing support, an annular protrusion is arranged on the base, a lower locking piece is connected to the base in a threaded manner, a lower sealing ring and a lower gasket which are arranged at intervals are clamped between the base and the lower locking piece, and the lower sealing ring and the lower gasket are located between the annular protrusion and the lower locking piece;
through screwing down of the lower locking piece, the lower sealing ring is extruded, and the quartz tube and the base are fixed relatively.
An upper flange plate is installed at the top of the quartz tube and fixed on an upper fixing support, an upper locking part is connected to the upper flange plate through threads, an upper sealing ring and an upper gasket which are arranged at intervals are clamped between the upper locking part and the upper flange plate, and the upper sealing ring and the upper gasket are located between the upper flange plate and the quartz tube;
and the upper sealing ring is extruded by screwing the upper locking piece upwards to realize the relative fixation of the quartz tube and the upper flange plate.
Has the advantages that:
firstly, the bismuth telluride thermoelectric material (namely Bi) is filled in the crystal growth process2Te3Alloy material) can rotate around the supporting shaft at a certain speed, and the inclination of a growth interface caused by nonuniform circumferential heat transfer can be effectively prevented.
Secondly, the thermoelectric material (namely Bi) filled with bismuth telluride2Te3Alloy material) is always in a vacuum state in the crystal growth process, so that heat exchange between the crystal-filled quartz glass tube or the heat-resistant glass tube and the environment in a convection mode is blocked, the transmission of radial heat is effectively inhibited, and directional solidification is facilitated.
Thirdly, for thermoelectric material (namely Bi) filled with bismuth telluride2Te3Alloy material) quartz glass tube or heat-resisting glass tube's rotatory back shaft carries out water cooling, makes the crystal in-process heat can be derived along the axial fast, and the heat transmission direction has been controlled, increases the temperature gradient of crystal growth direction, can effectively restrain the component and supercool, and the material component is more even, is favorable to the growth interface more to the flattening, suppresses the emergence of slant crystallization. The thermoelectric performance of the material can be improved, and the oblique cracks or local defects of the corners of the thermoelectric element caused by oblique crystallization are improved; improves the bismuth telluride thermoelectric material (namely Bi)2Te3Alloy material) availability and utilization.
Drawings
FIG. 1 is a schematic diagram of a structure of the present invention.
Wherein: the device comprises a base 1, a quartz tube 2, a top cover 3, a centering block 4, a disc 5, an upper bearing 6, an outer tube 7, a lower bearing 8, a rotary joint 9, a water outlet 10, a water inlet 11, a heater 12, an inner tube 13, a heat-resistant pipe 14, a vacuum valve 15 and a support piece 71.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, specific example 1: a directional growth method of a bismuth telluride thermoelectric material comprises the following steps:
preparing a bismuth telluride thermoelectric material to be zone-melted, and sealing the bismuth telluride thermoelectric material in a heat-resistant pipe fitting 14, wherein the bismuth telluride thermoelectric material is in vacuum or inert gas with certain pressure, and the heat-resistant pipe fitting 14 is a quartz pipe or a heat-resistant glass pipe;
placing the heat-resistant pipe fitting 14 filled with the bismuth telluride thermoelectric material into a vacuum cavity, wherein a vertically arranged rotary supporting shaft is arranged in the vacuum cavity, the heat-resistant pipe fitting 14 is vertically arranged at the top of the rotary supporting shaft, and a water cooling channel for conveying water cooling liquid is arranged in the rotary supporting shaft;
step three, preparing Bi by using a zone melting method2Te3A crystal; the vacuum degree of the cavity of the quartz tube 2 is not more than 100 Pa; rotating the support shaft at a speed of 2-20 rpm; the zone melting temperature is controlled between 650 ℃ and 750 ℃; the flow rate of the water cooling liquid is controlled to be 5L/min-20L/min.
The supporting shaft comprises an inner pipe 13 and an outer pipe 7 which are arranged inside and outside, the upper end of the outer pipe 7 is sealed, a supporting piece 71 is installed at the upper end of the outer pipe 7, the supporting piece 71 is used for supporting and fixing a heat-resistant pipe fitting 14, the inner pipe 13 is communicated up and down, the top of the inner pipe 13 is lower than the top of an inner cavity of the outer pipe 7, a rotary joint 9 is installed at the bottom of the supporting shaft, a water inlet 11 and a water outlet 10 are installed on the rotary joint 9, the water outlet 10 is communicated with the inner wall of the inner pipe 13, and the area between the inner pipe 13 and the outer pipe 7 is communicated with the water inlet 11; the supporting shaft is rotatably connected with the vacuum cavity through a lower bearing 8. The water cooling of the supporting shaft is convenient to realize.
The vacuum cavity comprises a base 1, a quartz tube 2 and a top cover 3; the quartz tube 2 is arranged between the top cover 3 and the base 1, the quartz tube 2 and the top cover 3 enclose a vacuum cavity, and the base 1 is provided with an air exhaust hole communicated with the vacuum cavity; a heater 12 is arranged on the periphery of the quartz tube 2; the base 1 is rotatably connected with a supporting shaft through a bearing. The base 1 is provided with a vacuum valve. The vacuum valve 15 is in communication with the vacuum chamber.
A centering mechanism for keeping the heat-resistant pipe member 14 in a vertical state is mounted on the top cover 3. The aligning mechanism comprises at least three aligning blocks 4 which are uniformly distributed in the circumferential direction, and the inner walls of the aligning blocks 4 are cylindrical surfaces matched with the outer walls of the heat-resistant pipe fittings; the outer side wall of the centering block is an inclined plane which is inclined inwards from top to bottom; the top of the quartz tube is provided with an upper flange which is rotationally connected with a disc 5 through an upper bearing 6; the inner wall of the disc is circumferentially provided with a limit groove into which the centering block is inserted, the inner wall of the limit groove is provided with an inclined plane matched with the outer side wall of the centering block, and the heat-resistant pipe fitting and the centering block synchronously rotate. Further preferably, three centering blocks are provided. According to the principle that a circle is determined by three points, three positioning grooves (inclined groove) corresponding to the inclined planes of the centering block are uniformly distributed on the inner cylindrical surface of the disc, and the angle of the heat-resisting pipe fitting in the vertical direction is adjusted to be coaxial with the rotating shaft by the up-and-down movement of the centering block in the inclined groove. The slope of the inner wall of the limiting groove is matched with the slope of the outer side wall of the centering block.
The base is arranged on the lower fixing support, an annular protrusion is arranged on the base, a lower locking piece is connected to the base in a threaded mode, a lower sealing ring and a lower gasket which are arranged at intervals are clamped between the base and the lower locking piece, and the lower sealing ring and the lower gasket are located between the annular protrusion and the lower locking piece; the lower sealing ring is extruded by screwing the lower locking piece downwards, so that the quartz tube and the base are fixed relatively. The upper flange plate is fixed on the upper fixing support, an upper locking part is connected to the upper flange plate through threads, an upper sealing ring and an upper gasket which are arranged at intervals are clamped between the upper locking part and the upper flange plate, and the upper sealing ring and the upper gasket are positioned between the upper flange plate and the quartz tube; the upper sealing ring is extruded by screwing the upper locking piece upwards, so that the quartz tube and the upper flange plate are fixed relatively. The lower sealing rings and the lower gaskets which are arranged at intervals are preferably a first lower gasket, a first lower sealing ring, a second lower gasket and a second lower sealing ring which are sequentially arranged from top to bottom. The section of the second lower gasket is a trapezoid with the width decreasing from outside to inside. The upper sealing ring and the upper gasket which are arranged at intervals are preferably a first upper sealing ring, a first upper gasket, a second upper sealing ring and a second upper gasket which are arranged in sequence from top to bottom. The section of the first upper gasket is a trapezoid with the width decreasing from outside to inside.
The vacuum cavity is assembled by connecting the base with the lower fixing support. The base is provided with a supporting shaft. The upper flange plate is connected with the upper fixed bracket. The quartz tube penetrates through the upper flange plate and the base, and then the quartz tube is relatively fixed through the upper locking piece and the lower locking piece. After the heat-resisting pipe fittings are put in, the top cover is covered. The bottom outward flange of top cap is equipped with the installation spacing ring, and the outward flange of top cap is installed on last ring flange. The pressing plate is pressed downwards to be provided with the limiting ring, and the pressing plate is detachably connected with the upper flange plate. The upper flange plate comprises an upper part and a lower part which are detachably connected, a bearing is installed on the inner wall of the upper part, and a sealing ring is arranged between the upper part and the lower part. A sealing ring is arranged between the upper part and the mounting limit ring.
The width of the melting zone is 20 mm-40 mm. The crystal growth speed is 10 mm/h-35 mm/h.
By adopting the method, the parameters of vacuum degree, rotation speed, water flow and growth speed are adjusted to obtain the following five groups of experiments, wherein the parameters are shown in the table I, and the experimental results are shown in the table II.
Watch 1
TABLE II, Experimental results
Has the advantages that:
firstly, Bi is charged in the crystal growth process2Te3The quartz glass tube or the heat-resistant glass tube made of the alloy material can rotate around the supporting shaft at a certain speed, and the inclination of a growth interface caused by uneven circumferential heat transfer can be effectively prevented.
Secondly, make Bi contained2Te3The quartz glass tube or the heat-resistant glass tube made of the alloy material is always in a vacuum state in the crystal growth process, so that heat exchange between the quartz glass tube or the heat-resistant glass tube filled with the crystal and the environment in a convection mode is blocked, the transmission of radial heat is effectively inhibited, and directional solidification is facilitated.
III is to contain Bi2Te3Alloy materialThe rotating supporting shaft of the quartz glass tube or the heat-resistant glass tube is cooled by water, so that heat in the crystal growth process can be quickly led out along the axial direction, the heat transmission direction is controlled, the temperature gradient in the crystal growth direction is increased, the supercooling of components can be effectively inhibited, the components of the material are more uniform, the growth interface tends to be flatter, and the occurrence of oblique crystallization is inhibited. The thermoelectric performance of the material can be improved, and the oblique cracks or local defects of the corners of the thermoelectric element caused by oblique crystallization are improved; the perfectness and utilization rate of the thermoelectric element material are improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (9)
1. A directional growth method of a bismuth telluride thermoelectric material is characterized by comprising the following steps:
preparing a bismuth telluride thermoelectric material to be zone-melted, and sealing the bismuth telluride thermoelectric material in a heat-resistant pipe fitting, wherein the bismuth telluride thermoelectric material is in vacuum or inert gas, and the heat-resistant pipe fitting is a quartz pipe or a heat-resistant glass pipe;
placing the heat-resistant pipe fitting into a vacuum cavity, wherein a vertically arranged rotating support shaft is installed in the vacuum cavity, the heat-resistant pipe fitting is vertically installed at the top of the rotating support shaft, and a water cooling channel is arranged in the rotating support shaft;
step three, preparing Bi by using a zone melting method2Te3A crystal;
the vacuum cavity is vacuum, and the air pressure is less than or equal to 100 Pa;
the rotating speed of the rotating support shaft is 2rpm-20 rpm;
the zone melting temperature is controlled between 650 ℃ and 750 ℃;
the flow rate of the water cooling liquid is controlled to be 5L/min-20L/min.
2. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 1, wherein: the supporting shaft comprises an inner pipe and an outer pipe which are arranged inside and outside, the upper end of the outer pipe is sealed, a supporting piece is installed at the upper end of the outer pipe and used for supporting and fixing the heat-resistant pipe fitting, the inner pipe is communicated up and down, the top of the inner pipe is lower than the top of an inner cavity of the outer pipe, a rotary joint is installed at the bottom of the supporting shaft, a water inlet and a water outlet are installed on the rotary joint, the water outlet is communicated with the inner wall of the inner pipe, and an area between the inner pipe and the outer pipe is communicated with the water inlet;
the supporting shaft is rotatably connected with the vacuum cavity through a bearing.
3. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 1, wherein: the vacuum cavity comprises a base, a quartz tube and a top cover; the quartz tube is arranged between the top cover and the base, the rotary support shaft, the base, the quartz tube and the top cover enclose a vacuum cavity, and the base is provided with an air exhaust hole communicated with the vacuum cavity;
a heater is arranged on the periphery of the quartz tube;
the base is rotatably connected with a rotary supporting shaft through a bearing.
4. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 3, wherein: and the top cover is provided with a centering mechanism for keeping the heat-resistant pipe fitting in a vertical state.
5. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 3, wherein: the heaters move upwards at uniform speed.
6. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 5, wherein: the moving speed of the heater is 10 mm/h-35 mm/h.
7. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 4, wherein: the aligning mechanism comprises at least three aligning blocks which are uniformly distributed in the circumferential direction, and the inner walls of the aligning blocks are cylindrical surfaces matched with the outer walls of the heat-resistant pipe fittings;
the outer side wall of the aligning block is an inclined surface which is inclined inwards from top to bottom;
an upper flange plate is mounted at the top of the quartz tube, the upper flange plate is detachably connected with the top cover, and a sealing ring is arranged between the upper flange plate and the top cover;
the upper flange plate is rotationally connected with a disc through a bearing;
the inner wall circumference of disc is seted up and is inserted the spacing groove of aligning piece, the inner wall of spacing groove be equipped with the lateral wall assorted inclined plane of aligning piece, heat-resisting pipe fitting with aligning piece synchronous revolution.
8. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 1, wherein: and in the step two, the width of the melting zone is 20 mm-40 mm during zone melting.
9. The directional growth method of the bismuth telluride thermoelectric material as set forth in claim 1, wherein: the crystal growth speed is 10 mm/h-35 mm/h.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1094429A (en) * | 1965-11-30 | 1967-12-13 | Siemens Ag | Crucible-free zone-by-zone melting |
| JP2003012308A (en) * | 2001-06-20 | 2003-01-15 | Heizen Sen | Production method of thermoelectric semiconductor material by rapid solidification processing and/or hot compression processing and production apparatus for the same |
| CN104495763A (en) * | 2014-12-12 | 2015-04-08 | 上海申和热磁电子有限公司 | Preparation method of bismuth-telluride-base thermoelectric material |
| CN112064108A (en) * | 2020-09-11 | 2020-12-11 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Vacuum high-pressure single crystal furnace system for growing mercury telluride crystals and control method thereof |
| CN112064107A (en) * | 2020-09-11 | 2020-12-11 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | High-pressure single crystal furnace body structure for realizing gradient distribution of temperature field in furnace |
-
2021
- 2021-11-24 CN CN202111403206.5A patent/CN114293260A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1094429A (en) * | 1965-11-30 | 1967-12-13 | Siemens Ag | Crucible-free zone-by-zone melting |
| JP2003012308A (en) * | 2001-06-20 | 2003-01-15 | Heizen Sen | Production method of thermoelectric semiconductor material by rapid solidification processing and/or hot compression processing and production apparatus for the same |
| CN104495763A (en) * | 2014-12-12 | 2015-04-08 | 上海申和热磁电子有限公司 | Preparation method of bismuth-telluride-base thermoelectric material |
| CN112064108A (en) * | 2020-09-11 | 2020-12-11 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Vacuum high-pressure single crystal furnace system for growing mercury telluride crystals and control method thereof |
| CN112064107A (en) * | 2020-09-11 | 2020-12-11 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | High-pressure single crystal furnace body structure for realizing gradient distribution of temperature field in furnace |
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