CN114293176A - Wafer supporting disk and process cavity - Google Patents
Wafer supporting disk and process cavity Download PDFInfo
- Publication number
- CN114293176A CN114293176A CN202111675008.4A CN202111675008A CN114293176A CN 114293176 A CN114293176 A CN 114293176A CN 202111675008 A CN202111675008 A CN 202111675008A CN 114293176 A CN114293176 A CN 114293176A
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- Prior art keywords
- ring
- wafer support
- replacement
- retaining ring
- wafer
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 title claims abstract description 38
- 230000000452 restraining effect Effects 0.000 claims abstract description 9
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a wafer support plate comprising: a base defining an accommodating space; a disc accommodated in the accommodating space of the base and having a bearing surface; a shaft ring, which is accommodated in the accommodating space of the base and sleeved on the periphery of the disc; a retaining ring having a top surface, a bottom mechanism and a restraining mechanism, said bottom mechanism matching the arrangement of said collar and said base; and a replacement ring disposed between the base and the positioning ring and having a height, the height of the replacement ring determining whether a gap is formed between the positioning ring and the collar, thereby blocking thermal contact between the positioning ring and the collar. The invention also provides a process cavity.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer supporting plate and a process cavity.
Background
In a typical semiconductor process, such as a Chemical Vapor Deposition (CVD) process or a plasma-enhanced chemical vapor deposition (PECVD) process, a wafer is placed on a support plate (or heating plate) in a semiconductor processing chamber for a sequential pre-treatment and deposition process. In known arrangements, the support plate may incorporate a retaining ring to limit the position of the wafer on the support plate and affect the deposition rate at the edge of the wafer depending on the shape of the retaining ring.
Regarding the support plate, chinese patent CN101765464B discloses a positioning ring technology. In HDP-CVD processes, the silicon substrate is bombarded by high density plasma, which results in a large number of silicon oxide family radicals being dissociated from the surface of the silicon wafer. The above radicals have the ability to reattach to the silicon substrate or the surface of the retaining ring by forming hydrogen bonds. If the back connection of the free radicals is not prevented in time, the etching rate in the process is influenced, and particles are formed on the surface of the silicon substrate or the positioning ring to pollute the product.
If the surface of the component is maintained at an elevated temperature, the potential for hydrogen bond formation is greatly reduced or even eliminated. However, the conventional positioning ring is directly attached to the collar on the periphery of the supporting disk, so that the positioning ring is indirectly cooled by the water cooling pipeline in the supporting disk, so that the temperature of the positioning ring in the process is lower than that of the surface of the silicon substrate, and the positioning ring is easier to attract radicals to adsorb to form particles.
The disclosed patent greatly reduces the thermal contact between the retaining ring and the underlying component, primarily by forming an insulating gap below the retaining ring, so that high temperatures can be maintained during the process to inhibit the build-up of silicon oxide family radicals on the surface to form particles. This approach has been to improve the overall design of the retaining ring to address this challenge, but not all processes are suitable for such improvements. The positioning ring has a focusing function on the plasma, and the relative height of the positioning ring and the supporting disk can directly influence the plasma field and the film performance. The retaining ring is exposed to the high density plasma bombardment and requires periodic cleaning and replacement. The specific design of the positioning ring also does not facilitate flexible application in the process. Too frequent replacement of the positioning ring leads to increased machine cost, and the long production period is inconvenient for debugging under different processes. In addition, the special design of the positioning ring disclosed in the foregoing also leaves too many stress accumulation points, which may reduce the structural strength and the service life of the positioning ring to a great extent.
Accordingly, there is a need for a wafer support plate and a process chamber that addresses the above-mentioned problems of the prior art.
Disclosure of Invention
The invention aims to provide a wafer supporting plate and a process cavity to solve the problems in the prior art.
The invention provides a wafer support plate, comprising: a disc having a carrying surface for carrying the wafer; a collar sleeved around the disc; a retainer ring having a top surface, a bottom means and a restraining means, said bottom means mating with said collar and said restraining means; and a replacement ring disposed below the positioning ring and having a height, the height of the replacement ring determining whether a gap is formed between the positioning ring and the collar, thereby blocking thermal contact between the positioning ring and the collar.
The wafer supporting disc provided by the invention has the beneficial effects that: the replacement ring is arranged below the positioning ring and has a height, and the height of the replacement ring is used for determining whether a gap is formed between the positioning ring and the collar, so that the thermal contact between the positioning ring and the collar is blocked, and the problem of particle accumulation at the edge of a wafer is avoided.
Optionally, the base has an annular wall and a bottom, and the annular wall and the bottom define the accommodating space.
Optionally, the collar is a ceramic ring and has an upwardly facing surface, the upwardly facing surface of the collar being lower than the bearing surface.
Optionally, the bottom mechanism of the retaining ring is a stepped structure comprising a downward facing contact surface contacting an upward facing surface of the replacement ring when the bottom mechanism of the retaining ring is mated with the collar and the base, and a downward facing cover surface facing the upward facing surface of the collar.
Optionally, the retaining ring and the replacement ring are removable from the wafer support tray.
Optionally, the retaining ring has an upwardly facing surface, and a vertical drop between the upwardly facing surface of the retaining ring and the carrying surface determines a wafer edge deposition rate.
Optionally, the gap is less than or equal to 1 mm to allow for thermal isolation blocking and arc generation.
Alternatively, the positioning ring is composed of an inner part and an outer part which are connected in a detachable horizontal manner, wherein the inner part can be replaced by another inner part, and the inner part and the other inner part have different upward surfaces, so that the positioning ring can be used by the inner part or the other outer part selectively according to different processes.
Alternatively, the positioning ring is composed of an inner part and an outer part in a detachable vertical connection manner, wherein the inner part can be replaced by another inner part, and the inner part and the other inner part have different upward surfaces, so that the positioning ring can be selectively used by the inner part or the other outer part according to different processes.
Optionally, the replacement ring is composed of a plurality of rings, such that the height of the replacement ring is determined by the number of the plurality of rings.
Optionally, the bottom of the replacement ring may have a downwardly extending centering structure for ensuring that the replacement ring is concentric with the disk.
The invention also provides a process cavity for executing the plasma process, which comprises the wafer supporting disk. The wafer supporting disc has the beneficial effect that the problem of accumulation of particles on the edge of a wafer is avoided by using the wafer supporting disc.
Drawings
Fig. 1 is an exploded view of a wafer support plate of the present invention.
Figure 2 is a cross-sectional view of the wafer support plate of the present invention.
Figure 3A is a partial cross sectional view of a first embodiment of the wafer support disk of the present invention showing the replacement ring having a first height.
Figure 3B is a partial cross sectional view of the first embodiment of the wafer support disk of the present invention showing the replacement ring having a second height.
Figure 4A is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing the replacement ring having a first height.
Figure 4B is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing the replacement ring having a second height.
Figure 4C is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing another configuration of the replacement ring. Figure 5A is a partial cross sectional view of a third embodiment of the wafer support disk of the present invention showing the replacement ring having a first height.
Figure 5B is a partial cross sectional view of a third embodiment of the wafer support disk of the present invention showing the replacement ring having a second height.
Figure 5C is a partial cross sectional view of a third embodiment of a wafer support disk of the present invention showing another configuration of a retaining ring.
Fig. 6A and 6B show other alternatives for the retaining ring.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
To address the problems of the prior art, embodiments of the present invention provide a wafer support plate, comprising: a disc having a carrying surface for carrying the wafer; a collar sleeved around the disc; a retainer ring having a top surface, a bottom means and a restraining means, said bottom means mating with said collar and said restraining means; and a replacement ring disposed below the positioning ring and having a height, the height of the replacement ring determining whether a gap is formed between the positioning ring and the collar, thereby blocking thermal contact between the positioning ring and the collar.
In some embodiments, the bottom mechanism of the retaining ring is a stepped structure.
In some embodiments, the retaining ring and the replacement ring are removable from the wafer support tray.
In some embodiments, the retaining ring has an upwardly facing surface, and the vertical drop between the upwardly facing surface of the retaining ring and the carrying surface determines the wafer edge deposition rate.
In some embodiments, the wafer support plate is adapted for plasma processing, and the gap is less than or equal to 1 mm to allow for thermal isolation blocking and arcing.
In some embodiments, the positioning ring is composed of an inner part and an outer part which are connected in a detachable horizontal manner, wherein the inner part can be replaced by another inner part, and the inner part and the other inner part have different upward surfaces, so that the positioning ring can be used by the inner part or the other outer part selectively according to different processes.
In some embodiments, the positioning ring is composed of an inner part and an outer part which are detachably connected vertically, wherein the inner part can be replaced by another inner part, and the inner part and the other inner part have different upward surfaces, so that the positioning ring can be used by the inner part or the other outer part according to different processes.
In some embodiments, the replacement ring is composed of a plurality of rings, such that the height of the replacement ring is determined by the number of the plurality of rings.
In some embodiments, the bottom of the replacement ring may have a downwardly extending centering structure for ensuring that the replacement ring is concentric with the disk.
In some embodiments, the invention also provides a process chamber for performing a plasma process comprising the wafer support plate. Figure 1 illustrates an exploded view of the major components of the wafer support disk of the present invention and figure 2 illustrates a cross-sectional view of the wafer support disk of the present invention. The wafer support plate is configured in a semiconductor process chamber, particularly a chamber for performing a plasma process.
In fig. 1, a base 1, an insulation sheet 2, a collar 3, a disc 4, a replacement ring 5 and a positioning ring 6 are arranged in sequence from bottom to top.
The base 1 is made of aluminum to enclose the disc 4 and related structures and pipes. The base 1 is shown to be formed by a bottom and an annular wall, defining a receiving space.
The insulating sheet 2 is made of alumina, aluminum nitride or a similar ceramic material for electrically insulating the disc 4 from external components.
The collar 3 is made of alumina, aluminium nitride or a similar ceramic material for holding the disc 4 and electrically insulating the disc 4 from external components. The second figure shows that the collar 3 is accommodated in the accommodating space and is sleeved and surrounded around the disc 4. The side and bottom surfaces of the disk 4 are electrically insulated from the outside by the coating of the insulating sheet 2 and the collar 3.
The disk 4 has a carrying surface for carrying a wafer to be processed and is configured to apply or receive rf signals to the plasma in the process chamber, which is energized with high power rf and high voltage. Specifically, a heating coil, an electrode plate and a related sensing unit may be embedded in the tray 4, and a cooling means, such as cooling water, may be provided at the bottom of the tray 4 to lower the temperature of the tray 4 itself.
The replacement ring 5 is made of alumina, aluminum nitride or similar ceramic materials and is a replaceable part. The replacement ring 5 may be one of a set of several components comprising different heights for use in a wafer support pedestal for adjusting the relative height of the retaining ring and the wafer and the degree of thermal contact between the retaining ring and the collar under different process requirements. The second figure shows that the replacement ring 5 is placed on top of the annular wall of the base 1 and surrounds the collar 3.
The retaining ring 6 is made of alumina, aluminum nitride or similar ceramic material and is used to hold the wafer on the carrying surface and focus the plasma (i.e., determine the deposition rate of the plasma at the edge of the wafer). Fig. 2 shows the retaining ring 6 placed over the annular wall of the base 1 and the collar 3 and around the bearing surface of the disc 4. Depending on the process requirements, the relative position of the retaining ring and the wafer and the degree of thermal contact between the retaining ring and the underlying component need to be considered. The embodiment is described with respect to the relationship between the collar 3 and the retaining ring 6, but in other embodiments, the retaining ring 6 need not be a collar below it, and may be other components depending on the design of the support disc. Accordingly, those skilled in the art will appreciate that collar 3 is not an essential feature of the present invention.
Fig. 3A is a partial cross-sectional view of a first embodiment of the wafer support disk of the present invention showing an alternative ring 5 having a first height H1; fig. 3B is a partial cross-sectional view of the first embodiment of the wafer support disk of the present invention showing an alternative ring 5' having a second height H2.
The positioning ring 6 has an upwardly facing surface, a bottom means and a restraining means. Wherein the bottom mechanism is of a stepped structure and is used for matching the upward surface of the collar 3 with height drop and the top of the annular wall of the base 1. The bottom means comprises a downwardly facing contact surface 61 and a downwardly facing cover surface 62. The downward facing contact surface 61 is shown lower than the downward facing cover surface 62 and faces the top of the annular wall of the base 1 and the upward facing surface 31 of the collar 3, respectively. The limiting mechanism is close to the edge of the wafer and is provided with an inclined surface for limiting the displacement of the wafer.
The first height H1 of replacement ring 5 of fig. 3A is such that the downward facing cover side of positioning ring 6 abuts the upward facing surface 31 of collar 3. Second height H2 of replacement ring 5' of fig. 3B is greater than first height H1, such that positioning ring 6 is slightly raised, forming a gap G between downwardly facing cover surface 62 and upwardly facing surface 31. Since the collar 3 is available as a heat or cooling source, depending on the process requirements, the operator can decide, depending on the use of the replacement ring, whether a gap G is formed below the positioning ring 6, in particular said gap G must not exceed 1 mm, in order to ensure that thermal contact is prevented and arcing is avoided.
It is noted that the choice of the replacement rings 5, 5' determines whether a gap G is formed between the retaining ring 6 and the underlying component (e.g., the collar 3), however, the raised retaining ring 6 may lift the wafer off the disk 4 altogether. Therefore, in practical applications, the choice of replacement rings 5, 5' must be considered together with the positioning ring 6. In summary, when a replacement ring is selected to force the retaining ring to be raised, if the wafer is raised together, the retaining ring also needs to be replaced together, and another suitable retaining ring is selected so that the gap G can be formed and the raised retaining ring does not allow the wafer to fall off the disk 4, as shown in fig. 3A and 3B for retaining ring 6 having the same bottom mechanism but slightly different upward facing surfaces. This is due to the fact that in most processes, the wafer must be in good contact with the disk surface for heating or other purposes.
Furthermore, it should be appreciated by those skilled in the art that replacement rings of different heights may also determine the vertical drop between the upwardly facing surface 63 of the retaining ring 6 and the wafer and the carrier surface without replacing the retaining ring 6, thereby affecting the distribution of the plasma field at the edge of the wafer.
Fig. 4A is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing an alternative ring 5 having a first height H1; fig. 4B is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing an alternative ring 5' having a second height H2; figure 4C is a partial cross sectional view of a second embodiment of the wafer support disk of the present invention showing another configuration of the retaining ring.
In contrast to the previous embodiments, the positioning rings 6', 6 "are composed of a first part and a second part connected in a detachable horizontal manner. The positioning rings 6', 6 "are shown to have an inner part (inner ring) and an outer part (outer ring), the inner part containing the limiting means. In case the same positioning ring 6 ' is used, the different replacement rings 5, 5 ' determine whether a gap G is formed below the positioning ring 6 '. If it is desired to maintain the gap G and adjust the wafer edge deposition performance, the inner component can be replaced with the inner component of FIG. 4C to become the retaining ring 6 "such that the retaining ring 6" has a higher upward facing surface 63 'than the retaining ring 6', creating a different edge deposition rate.
Fig. 5A is a partial cross sectional view of a third embodiment of the wafer support disk of the present invention showing an alternative ring 5 having a first height H1; fig. 5B is a partial cross sectional view of a third embodiment of the wafer support disk of the present invention showing an alternative ring 5' having a second height H2; figure 5C is a partial cross sectional view of a third embodiment of a wafer support disk of the present invention showing another configuration of a retaining ring.
In contrast to the previous embodiments, the positioning rings 6A, 6B are composed of a first part and a second part in a detachable vertical connection. The positioning rings 6A, 6B are shown having an inner part (inner ring) and an outer part (outer ring), the inner part containing the limiting means. In the case of using the same positioning ring 6A, the different replacement rings 5, 5' determine whether a gap G is formed below the positioning ring 6A. If it is desired to maintain the gap G and adjust the wafer edge deposition performance, the inner component can be replaced with the inner component of FIG. 5C to become the retaining ring 6B, such that the retaining ring 6B has a higher upward facing surface than the retaining ring 6A, creating a different edge deposition rate.
It should be understood by those skilled in the art that factors affecting the deposition rate at the edge of the wafer, in addition to the vertical drop between the top surface of the retaining ring and the wafer, are also factors affecting the slope of the restraining mechanism of the retaining ring. Thus, the positioning ring formed by the first part and the second part provides more options for combination without replacing the entire positioning ring.
Fig. 6A and 6B show other alternatives for the retaining ring. Fig. 6A shows that the replacement ring 5 "may also be composed of multiple rings, which may increase or decrease the number of rings depending on the process requirements. Fig. 6B shows that the bottom of the replacement ring may have a downwardly extending centering structure 51 for engaging the annular wall of the base 1 to ensure that the replacement ring is concentric with the support disk.
As demonstrated by the above embodiments, the wafer support disk of the present invention has the following technical advantages: the shapes of all parts in the wafer supporting disc are simple, so that the structural strength is ensured, and the cost is reduced; the accumulation of particles on the edge of the wafer in a specific process can be inhibited by adjusting the thermal contact degree between the upper assembly and the lower assembly; provides the option of adjusting the thermal contact between the upper component and the lower component, and can flexibly adapt to the requirements of different processes.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. A wafer support disk comprising: a disc having a carrying surface for carrying the wafer; a collar sleeved around the disc; a retainer ring having a top surface, a bottom means and a restraining means, said bottom means mating with said collar and said restraining means; and a replacement ring disposed below the positioning ring and having a height, the height of the replacement ring determining whether a gap is formed between the positioning ring and the collar, thereby blocking thermal contact between the positioning ring and the collar.
2. The wafer support tray of claim 1, wherein the bottom portion of the retaining ring is a stepped configuration.
3. The wafer support tray of claim 1, wherein the retaining ring and the replacement ring are removable from the wafer support tray.
4. The wafer support tray of claim 1, wherein the retaining ring has an upwardly facing surface, the vertical drop between the upwardly facing surface of the retaining ring and the support surface determining the wafer edge deposition rate.
5. The wafer support disk of claim 1, wherein the gap is less than or equal to 1 mm to allow for thermal isolation blocking and arcing.
6. The wafer support tray of claim 1, wherein the retaining ring is comprised of an inner part and an outer part that are removably and horizontally connected, wherein the inner part is replaceable with another inner part, and wherein the inner and other inner parts have different upwardly facing surfaces, such that the retaining ring may be selectively used with either the inner part or the other outer part for different processes.
7. The wafer support tray of claim 1, wherein the retaining ring is comprised of an inner part and an outer part in a detachable vertical connection, wherein the inner part is replaceable with the other inner part and the inner and the other inner parts have different upwardly facing surfaces, such that the retaining ring may be selectively used with either the inner part or the other outer part for different processes.
8. The wafer support tray of claim 1, wherein the replacement ring is comprised of a plurality of rings such that the height of the replacement ring is determined by the number of rings.
9. The wafer support tray of claim 1, wherein the bottom of the replacement ring may have a downwardly extending centering structure for ensuring that the replacement ring is concentric with the tray.
10. A process chamber for performing a plasma process comprising a wafer support plate according to any one of claims 1 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111675008.4A CN114293176A (en) | 2021-12-31 | 2021-12-31 | Wafer supporting disk and process cavity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111675008.4A CN114293176A (en) | 2021-12-31 | 2021-12-31 | Wafer supporting disk and process cavity |
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| CN114293176A true CN114293176A (en) | 2022-04-08 |
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| CN202111675008.4A Pending CN114293176A (en) | 2021-12-31 | 2021-12-31 | Wafer supporting disk and process cavity |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| CN101765464A (en) * | 2007-07-27 | 2010-06-30 | 应用材料股份有限公司 | High profile minimum contact process kit for HDP-CVD application |
| CN108103473A (en) * | 2017-12-18 | 2018-06-01 | 沈阳拓荆科技有限公司 | For the masking device and its application method of semiconductor processes cavity |
| US20180334746A1 (en) * | 2017-05-22 | 2018-11-22 | Lam Research Corporation | Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch |
| CN214279906U (en) * | 2021-04-02 | 2021-09-24 | 中微半导体设备(上海)股份有限公司 | Cleaning wafer and plasma processing device |
-
2021
- 2021-12-31 CN CN202111675008.4A patent/CN114293176A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| CN101765464A (en) * | 2007-07-27 | 2010-06-30 | 应用材料股份有限公司 | High profile minimum contact process kit for HDP-CVD application |
| US20180334746A1 (en) * | 2017-05-22 | 2018-11-22 | Lam Research Corporation | Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch |
| CN110892501A (en) * | 2017-05-22 | 2020-03-17 | 朗姆研究公司 | Wafer edge contact hardware and method for eliminating wafer back edge and notch deposits |
| CN108103473A (en) * | 2017-12-18 | 2018-06-01 | 沈阳拓荆科技有限公司 | For the masking device and its application method of semiconductor processes cavity |
| CN214279906U (en) * | 2021-04-02 | 2021-09-24 | 中微半导体设备(上海)股份有限公司 | Cleaning wafer and plasma processing device |
Non-Patent Citations (1)
| Title |
|---|
| 张伟杰 等主编: "《煤矿机械故障诊断与维修》", 冶金工业出版社, pages: 185 - 186 * |
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Application publication date: 20220408 |