CN114284373B - Two-dimensional PIN junction infrared photoelectric detector, detector array and preparation method - Google Patents

Two-dimensional PIN junction infrared photoelectric detector, detector array and preparation method Download PDF

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CN114284373B
CN114284373B CN202111331892.XA CN202111331892A CN114284373B CN 114284373 B CN114284373 B CN 114284373B CN 202111331892 A CN202111331892 A CN 202111331892A CN 114284373 B CN114284373 B CN 114284373B
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邱孝鑫
张岱南
张有禄
李晨光
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University of Electronic Science and Technology of China
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Abstract

The invention aims to provide a two-dimensional PIN junction infrared photoelectric detector, a detector array and a preparation method thereof, and belongs to the technical field of photoelectric detectors. The infrared photoelectric detector array unit is prepared by adopting a molecular beam epitaxy method, and an asymmetric two-dimensional film PIN shallow junction structure is formed by in-situ growth in the preparation process, wherein a P layer modifies neutral GeSn doped B by adopting a radio frequency magnetron sputtering mode, a layer I grows GeSn by adopting a double-source double-control method, and a layer N is obtained by doping a Ge film by adopting a high-temperature in-situ doping method; meanwhile, row conductors and column conductors which are perpendicular to each other and are arranged at equal intervals are designed, so that the array units are arranged in spaces divided by the row conductors and the column conductors, and then the array units are connected with the row conductors and the column conductors, and the photoelectric detection array can be obtained. The infrared detection array can realize any size, and the short circuit of a single array unit does not influence the performance of surrounding detectors.

Description

Two-dimensional PIN junction infrared photoelectric detector, detector array and preparation method
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a two-dimensional PIN junction infrared photoelectric detector based on molecular beam epitaxy, a detector array and a preparation method of the detector array.
Background
In the last 80 s, opto-electronic interconnect technology was first proposed due to its many advantages over electrical interconnects, such as: high parallelism, no interference, low loss and the like, so that the photoelectric device becomes a hot point direction of research quickly and the photoelectric device also comes along. As one of the photoelectric devices, the photoelectric detector has a wide application range, and covers various fields of military and national economy, wherein the photoelectric detector in the infrared band is concerned because of its important application in the fields of ray measurement and detection, industrial automatic control, photometric measurement, and the like.
However, the problems that the III-V group material and the II-V group material are incompatible with a Si-based CMOS standard process platform exist, so that the cost of the device is increased, and the reliability of the device is reduced. GaAs is a common infrared semiconductor material at present, but the cutoff wavelength of the GaAs is only 0.86 μm, and the GaAs cannot meet the bandwidth and waveband requirements of next-generation infrared detection; meanwhile, the preparation of the GaAs nanowire photoelectric array is complex, the growth quality of the nanowires is poor due to the reasons of strain and dislocation caused by lattice mismatch, the surface appearance is difficult to control effectively, the phenomenon of kinking occurs, and a large amount of thin-wire-shaped nanowires are generated along with the phenomenon, so that the light emitting characteristic of the nanowire array is limited. Ge and Si belong to IV group materials, and have the advantages of larger absorption coefficient, high carrier mobility, compatibility with Si process and the like in a 1310-1550nm waveband; in addition, for expanding the response wavelength of the Ge material, besides increasing the tensile strain of the Ge material, the Ge material can also be doped. Experiments prove that the Ge alloy formed by doping Ge with Sn, bi, pb and the like not only can reduce the band gap of the Ge material, but also can be converted into a direct band gap semiconductor material, so that the photoelectric transmission efficiency of the Ge material is improved. Therefore, ge-based photodetectors are considered to be one of the most promising optoelectronic devices in the field of Si-based optoelectronic integration. In recent years, geSn alloy materials have received much attention due to their advantages such as good semiconductor materials, good compatibility with CMOS processes, and excellent optical properties. These characteristics also make the GeR (R = Sn, bi) material one of the ideal materials for preparing mid-infrared and short-wave infrared band photoelectric detectors.
With the development of optoelectronic devices toward integration and miniaturization, the arrayed photodetectors become hot research spots gradually. The common array structure needs to plate electrodes on the upper surface and the lower surface of the film, so that the region of the back surface of the substrate opposite to the pixel needs to be made into an extremely thin microbridge structure, and an isolation groove needs to be arranged and filled with an insulating material, so that the duty ratio contradiction between a lead and the pixel exists in the limited substrate area; moreover, some integrated signal processing circuits are also prepared on the substrate, and damage is caused to the substrate itself, for example, patent CN10707218a (a gallium nitride micron line array photodetector and its preparation method); meanwhile, since each element of the detector array is directly connected with the readout circuit, the performance of the element is very important for the design of the infrared readout circuit, and the performance of the whole detection system is directly influenced.
Therefore, how to prepare a photoelectric detector unit based on a GeR (R = Sn, bi) material and how to design a detector array become problems to be solved urgently.
Disclosure of Invention
The invention aims to provide a two-dimensional PIN junction infrared photoelectric detector, a detector array and a preparation method thereof, aiming at solving the problems in the prior art. The infrared photoelectric detector array unit is prepared by adopting a molecular beam epitaxy method, and an asymmetric two-dimensional film PIN shallow junction structure is formed by in-situ growth in the preparation process, wherein a P layer modifies neutral GeSn doped B in a radio frequency magnetron sputtering mode, a I layer grows GeSn in a double-source double-control method, and an N layer is obtained by doping a Ge film in a high-temperature in-situ doping method; and simultaneously, designing row conductors and column conductors which are perpendicular to each other and are arranged at equal intervals, so that the array units are arranged in the space divided by the row conductors and the column conductors, and then completing the connection of the array units with the row conductors and the column conductors, thereby obtaining the photoelectric detection array. The infrared detection array can realize any size, and the short circuit of a single array unit does not influence the performance of surrounding detectors.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a two-dimensional PIN junction infrared photoelectric detector comprises an intrinsic single crystal Si substrate and p-type Ge in sequence from bottom to top 1-x R x Thin film, i-type Ge 1-x R x Thin film, n-type Ge 1-y X y A film and an electrode, the p-type Ge 1-x R x The film is B-doped with Ge 1-x R x A film with a thickness of 60-120nm 1-y X y The thickness of the film is 100-120 nm, wherein x is more than or equal to 0.05 and less than or equal to 0.25,0.04 and less than or equal to y is less than or equal to 0.15; the two-dimensional PIN junction infrared photoelectric detector also comprises two electrodes.
Further, ge 1-x R x The R element in the film is Sn or Si, and the X element in the GeX film is Bi, sb or Tm.
A preparation method of a two-dimensional PIN junction infrared photoelectric detector comprises the following steps:
step 1, cleaning an intrinsic single crystal Si substrate;
step 2, adopting a molecular beam epitaxy method to grow Ge on the surface of the Si substrate cleaned in the step 1 1-x R x The film is 60-120nm thick, x is more than or equal to 0.05 and less than or equal to 0.25;
step 3. Ge deposited in step 2 1-x R x Carrying out boron atom doping modification treatment on the surface of the film to obtain p-type Ge 1-x R x A film;
step 4, obtaining p-type Ge in step 3 1-x R x Growing i-type Ge on the surface of the film by adopting molecular beam epitaxy technology 1-x R x The intrinsic thin film, wherein, the content of x is consistent with that in the step 2, and the thickness of the thin film is 60-120 nm;
step 5. I type Ge deposited in step 4 1-x R x Growing n-type Ge on the surface of the intrinsic film by adopting a double-source double-control method 1-y X y Thin film of, wherein, ge 1-y X y The thickness of the film is 100-120 nm;
step 6, ge obtained in step 5 1-y X y The Ti/Au electrode is prepared on the surface of the film by adopting a method of magnetron radio frequency sputtering deposition, photoetching and reactive ion beam etching, and the two-dimensional PIN junction infrared photoelectric detector can be obtained.
Further, in step 3, p-type Ge 1-x R x The film is doped such that the carrier concentration of the film is 10 16-17 cm -3 。
Further, in step 2, a molecular beam epitaxy method is adopted to grow Ge 1-x R x The specific process of the film is as follows:
step 2.1, placing the intrinsic monocrystalline silicon substrate cleaned in the step 1 into a cavity of molecular beam epitaxy equipment, and vacuumizing until the air pressure of the cavity is 10 -10 Torr；
2.2, heating the substrate to 150-250 ℃, and keeping the temperature for 40-50 min to remove gas and impurities attached to the surface of the substrate;
step 2.3, respectively heating the reaction source germanium source and the R source to 1200-1350 ℃ and 800-1050 ℃, and simultaneously heating the substrate to 250-450 ℃;
step 2.4, opening baffles of the tin source and the R source, opening a substrate baffle after the beam current is stable, and depositing Ge on the substrate 1-x R x After the deposition reaction of the film is finished, the substrate baffle and the baffles of the tin source and the germanium source are closed, and Ge can be obtained on the surface of the silicon substrate 1-x R x A film.
Further, the heating rate of the heating substrate in the step 2.2 is 3-5 ℃/min; in the step 2.3, the volume percentage purity of the germanium source is higher than 99.99 percent, and the heating rate is 5-7 ℃/min; the volume percentage purity of the R source is higher than 99.99 percent, and the heating rate is 3-5 ℃/min; the heating rate of the substrate is 3-5 ℃/min; the deposition reaction time in step 2.4 is 60-120 min.
Further, in step 5, a molecular beam epitaxy method is adopted to deposit Ge 1-y X y The specific process of the film is as follows:
step 5.1, opening a baffle of the germanium source, opening a substrate baffle after the beam current is stable, and obtaining the i-type Ge 1-x R x Depositing a Ge film on the surface of the intrinsic film, closing the substrate baffle and the baffle of the germanium source after the reaction is finished, closing the substrate heating device, and cooling;
step 5.2, heating the reaction source X source to 300-500 ℃, opening a baffle of the X source when the temperature of the substrate is reduced to 150-250 ℃, waiting for the beam current to be stable, and opening the baffle of the substrate for growth;
step 5.3, adjusting the temperature of the substrate to 400-600 ℃, and keeping the temperature for 60-180 min to ensure that X atoms enter crystal lattices of the germanium film to finish N-type doping;
step 5.4, after the doping reaction is finished, cooling to room temperature, namely Ge is carried out 1-x R x The Ge with the thickness of 100-120 nm is obtained on the surface of the film 1-y X y A film.
A two-dimensional PIN junction infrared photoelectric detector array comprises a plurality of row conducting wires, a plurality of column conducting wires and the two-dimensional PIN junction infrared photoelectric detector unit; the infrared photoelectric detector comprises a substrate, a plurality of line conductors, two-dimensional PIN junction infrared photoelectric detector units, a plurality of connection lines and a plurality of line conductors, wherein all the line conductors are arranged on the surface of the substrate at equal intervals, all the line conductors are arranged perpendicular to the line conductors at equal intervals, an insulating film is arranged at the cross part of the line conductors and the cross part of the line conductors, two-dimensional PIN junction infrared photoelectric detector units are arranged in the space divided by the line conductors and the line conductors, electrodes of the two-dimensional PIN junction infrared photoelectric detector units are respectively connected with the line conductors and the line conductors, a certain angle is formed between each detector unit and the connection lines of the conductors and the line conductors, and the materials of the two-dimensional PIN junction infrared photoelectric detector units in the detector array can be the same or different.
Further, the angle between the connecting line of the detector unit and the line conductor and the row conductor is preferably 30 to 60 °.
Further, the width of the row electrode and the column electrode is 10 μm to 100 μm, and the length is 200 μm to 1000 μm.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the photoelectric detector adopts an asymmetric PIN shallow junction structure, and Bi/Sb/Tm atoms are doped into a Ge film in a molecular beam epitaxy equipment cavity by adopting a high-temperature in-situ doping method in the preparation process, so that the Ge film is modified into an N-type semiconductor; meanwhile, the doping of Bi/Sb/Tm can promote the crystallization of the GeR (R = Bi, sb and Tm) film, so that a good single crystal film is obtained, the defects of the film are reduced, the electron mobility of the material is improved, and the dark current of the device is greatly reduced.
2. The device array separates the preparation of the array basic unit from the micro-processing process, the performance of the detector mainly depends on the performance of the substrate film, and the doping concentration of the film directly determines the infrared detection range and performance, so that the film grows uniformly, the performance of the detector is stable, and the interference of near-infrared band communication signals is greatly reduced; meanwhile, III-IV group/GeR group multi-material systems can be integrated in the same array, and the application wave band and the scene of the photoelectric detector are greatly widened.
3. The output signals of each pixel (detection unit) in the device array are independent, so that a fault element is easy to quickly find when the pixel is damaged, convenience is brought to subsequent circuit processing and performance detection of the detector, and the short circuit of a single electrode cannot influence the performance of the surrounding detector; meanwhile, the array is realized in a plane, the substrate is complete, complex operation is not needed to be carried out on the substrate, when the array reaches a certain scale, the trend of the conducting wire is simple, and the contradiction between the duty ratio of the lead and the pixel is avoided in the limited substrate area, so that a good design basis is provided for the realization of large-area array devices; in addition, the array preparation process is carried out by combining a mask plate with photoetching and etching, and as the size of the mask can be changed (the width of a row electrode and a column electrode can be 10-100 mu m and the length of the row electrode and the column electrode can be 200-1000 mu m), the array preparation with any size can be realized, and the method has wide application prospect.
Drawings
FIG. 1 is a schematic structural diagram of a two-dimensional thin film PIN junction infrared detector of the present invention.
FIG. 2 is a schematic diagram of a two-dimensional thin film PIN junction infrared detector array structure according to the present invention.
Fig. 3 is a diagram illustrating the photoelectric transmission efficiency of the GeBi layer in embodiment 1 of the present invention.
Fig. 4 is a diagram illustrating the photoelectric transmission efficiency of the GeSn layer in embodiment 1 of the present invention.
Fig. 5 is a switching characteristic curve of a photodetector array unit prepared in example 1 of the present invention.
FIG. 6 is an I-V curve of a photodetector array unit prepared in example 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
A two-dimensional PIN junction infrared photoelectric detector is shown in figure 1, and comprises an intrinsic single crystal Si substrate and p-type Ge from bottom to top 1-x R x Thin film, i-type Ge 1-x R x Thin film, n-type Ge 1-y X y A film and an electrode, the p-type Ge 1-x R x The film is B-doped with Ge 1-x R x A film with a thickness of 60-120nm 1-y X y The thickness of the film is 100-120 nm, wherein x is more than or equal to 0.05 and less than or equal to 0.25,0.04 and less than or equal to 0.15 1-x R x In a filmThe R element is Sn or Si, and the p-type Ge is 1-x R x Thin film and i-type Ge 1-x R x The R elements in the film can be the same or different, and the X element in the GeX film is Bi, sb or Tm.
The two-dimensional PIN junction infrared photoelectric detector is of an asymmetric PIN shallow junction structure, namely a P region and an N region are asymmetrically doped, so that the widening of a potential barrier region is facilitated, and the thickness of the potential barrier region is increased by adding an i layer; the generation probability of electron-hole pairs in a depletion layer is increased, and the light responsivity is improved.
Example 1
A preparation method of a two-dimensional PIN junction infrared photoelectric detector array unit comprises the following steps:
step 1, selecting an intrinsic monocrystalline silicon substrate (with the resistance R = 0.1-1.0 omega. Cm) with the crystal orientation of <100>, ultrasonically cleaning the intrinsic monocrystalline silicon substrate for 15min at 100 ℃ by using 10% hydrochloric acid, then ultrasonically cleaning the intrinsic monocrystalline silicon substrate for 15min at 100 ℃ by using 10% sodium hydroxide solution, and then ultrasonically cleaning the intrinsic monocrystalline silicon substrate for 10min by using acetone, alcohol and deionized water respectively in sequence to obtain the intrinsic monocrystalline silicon substrate with low roughness and high cleanliness;
step 2, growing Ge on the surface of the intrinsic single crystal Si substrate cleaned in the step 1 by adopting a molecular beam epitaxy method 0.9157 Sn 0.0843 The film comprises the following specific processes:
step 2.1, placing the intrinsic monocrystalline silicon substrate cleaned in the step 1 into a cavity of molecular beam epitaxy equipment, and vacuumizing until the air pressure of the cavity is 10 -10 Torr；
2.2, heating the intrinsic monocrystalline silicon substrate to 250 ℃ at the heating rate of 3 ℃/min, and keeping the temperature for 50min to remove gas and impurities attached to the surface of the intrinsic monocrystalline silicon substrate;
2.3, heating a germanium source with the volume percentage purity higher than 99.99% to 1300 ℃ at the heating rate of 7 ℃/min, heating a tin source with the volume percentage purity higher than 99.99% to 1000 ℃ at the heating rate of 5 ℃/min, and heating the substrate to 350 ℃ at the heating rate of 3 ℃/min;
step 2.4, opening baffles of the tin source and the R source, opening a substrate baffle after the beam current is stable, growing and sputtering for 2h, and closing the substrate baffle, the tin source and the germanium source after the deposition reaction is finishedBy using the baffle plate, 120nm Ge can be obtained on the surface of the silicon substrate 0.9157 Sn 0.0843 A film;
step 3. Ge deposited in step 2 0.9157 Sn 0.0843 Carrying out boron atom doping modification treatment on the surface of the film, and the specific process comprises the following steps:
step 3.1, ge obtained by deposition in the step 2 0.9157 Sn 0.0843 The film is put into a cavity of a magnetron sputtering device, and the cavity is vacuumized to 10 -4 Pa, then heating the substrate to 550 ℃ at the heating rate of 10 ℃/min, and keeping the temperature for 30min to remove gas and impurities attached to the surface;
3.2, starting a radio frequency source, opening an argon valve, introducing argon, adjusting the flow of the argon to ensure that the sputtering chamber is vacuumized to 10Pa, and adjusting the power of the radio frequency source, the reflected power and the real-time flow of the argon until glow is generated;
and 3.3, pre-sputtering for 2min, waiting for the beam current to be stable, opening a B target baffle, setting the sputtering power to be 30W, growing sputtering for 240s, then closing the baffle and the radio frequency source, and closing the substrate heating device to obtain the P-type Ge 0.9157 Sn 0.0843 Film, carrier concentration 10 16 cm -3 ；
Step 4, obtaining p-type Ge in step 3 1-x Sn x The surface of the film adopts molecular beam epitaxy technology to grow 120nm of i-type Ge 0.9157 Sn 0.0843 The specific growth process of the intrinsic thin film is the same as that in the step 2, wherein the content of x is consistent with that in the step 2 so as to reduce the lattice mismatch of the two layers of thin films and improve the interface quality of the thin films;
step 5. I type Ge deposited in step 4 0.9157 Sn 0.0843 The surface of the intrinsic film adopts a double-source double-control method to grow an n-type GeBi film with the thickness of 100nm, and the specific process comprises the following steps:
step 5.1, opening a baffle of the germanium source, opening a substrate baffle after the beam current is stable, and obtaining the i-type Ge 0.9157 Sn 0.0843 Depositing a Ge film on the surface of the intrinsic film, closing the substrate baffle and the baffle of the germanium source after the reaction is finished, closing the substrate heating device, and cooling;
step 5.2, heating a Bi source with the volume percentage purity higher than 99.99% to 450 ℃ at the heating rate of 5 ℃/min, opening a baffle of the Bi source when the substrate temperature is reduced to 200 ℃, waiting for the beam current to be stable, opening the baffle of the substrate, and reacting to grow 120 min; closing the substrate baffle and the baffles of the germanium source and the Bi source, and closing the heating power supplies of the germanium source and the Bi source;
step 5.3, adjusting the temperature of the substrate to 600 ℃, and keeping the temperature for 120min to ensure that Bi atoms enter crystal lattices of the germanium film to finish N-type doping;
and 5.4, after the doping reaction is finished, cooling the substrate to room temperature at the speed of 3 ℃/min, and obtaining Ge with the thickness of 100nm on the surface of the GeSn film 0.9447 Bi 0.0553 ；
Step 6, ge obtained in step 5 0.9447 Bi 0.0553 The Ti/Au electrode is prepared on the surface of the film by adopting a method of magnetron radio frequency sputtering deposition, photoetching and reactive ion beam etching, and the two-dimensional PIN junction infrared photoelectric detector can be obtained.
The photoelectric detector array is prepared based on the array unit, the structural schematic diagram of the photoelectric detector array is shown in fig. 2, and the preparation method specifically comprises the following steps:
preparing lower electrode, i.e. column conductor, by combining photoetching and etching, and then depositing and growing dense Al in the staggered area of column conductor and row guide by atomic deposition (ALD) 2 O 3 Oxidizing an insulating layer, wherein the thickness of the insulating layer is 50-70nm, and then preparing an upper electrode, namely row leads, by combining photoetching and etching, wherein all the column leads are arranged on the surface of the substrate at equal intervals, all the row leads are arranged at equal intervals vertical to the column leads, and the crossed parts of the row leads and the column leads are insulated; an array unit is arranged in a space divided by the row conducting wire and the column conducting wire; the center distance between two adjacent array units is 1000 μm, two ends of the electrode of the array unit are respectively connected with the row wire and the column wire, the anode (the electrode contacted with the p-type film) of each array unit is connected with the column wire of the column, the cathode (the electrode contacted with the n-type film) of each array unit is connected with the row wire of the column, and the connecting wires of the array units and the wires and the column wires are arranged at 45 degrees (reducing the wiring distance and reducing the ohmic contact electrode). Length of row and column conductorsThe insulating film has a side length larger than the width of the conducting wire, so that the insulation between all row conducting wires and all column conducting wires can be fully ensured.
Example 2
The semiconductor photodetector was produced according to the production method of example 1, and only the temperature of the Bi source in step 5.2 was adjusted to 475 ℃ to obtain Ge 0.9163 Bi 0.0837 The remaining procedure was the same as in example 1.
Example 3
The semiconductor photodetector was prepared according to the preparation method of example 1, and only the source in step 5 was changed to an Sb source and the growth temperature was adjusted to 300 ℃ to obtain Ge 0.9 Sb 0.1 The film was obtained by the same procedure as in example 1.
Fig. 3 and 4 are graphs showing the photoelectric transmission efficiency of the n-type GeBi layer and the i-type GeSn layer in example 1 of the present invention, respectively. As can be seen from the figure, the two material systems have good and stable transmission efficiency at the wavelength of 1100nm-2200nm, namely the near-middle infrared band; the rationality of the application of the material system and the design and preparation of the photoelectric detector in the invention is demonstrated. Fig. 5 and 6 are a switching characteristic curve and an I-V curve, respectively, of a photodetector array unit prepared in example 1 of the present invention. As can be seen from fig. 5, the photodetector array unit has good switching characteristics under both light and dark conditions. As can be seen from fig. 6, the photodetector array unit has a superior I-V characteristic.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.

Claims (10)

1. The two-dimensional PIN junction infrared photoelectric detector is characterized by sequentially comprising an intrinsic single crystal Si substrate and p-type Ge from bottom to top 1-x R x Thin film, i-type Ge 1-x R x A film,n type Ge 1-y X y Film of Ge 1-x R x The R element in the film is Sn or Si, ge 1-y X y The X element in the film is Bi, sb or Tm; the p-type Ge 1-x R x The film is B-doped Ge 1- x R x A thin film with a thickness of 60-120nm and n-type Ge 1-y X y The thickness of the film is 100-120 nm, wherein x is more than or equal to 0.05 and less than or equal to 0.25,0.04 and less than or equal to 0.15; the two-dimensional PIN junction infrared photodetector further comprises an electrode.
2. A two dimensional PIN junction infrared photodetector as defined in claim 1, wherein p-type Ge 1-x R x Thin film and i-type Ge 1-x R x The R elements in the film may be the same or different.
3. A preparation method of a two-dimensional PIN junction infrared photoelectric detector is characterized by comprising the following steps:
step 1, cleaning an intrinsic single crystal Si substrate;
step 2, adopting a molecular beam epitaxy method to grow Ge on the surface of the Si substrate cleaned in the step 1 1-x R x The film is 60-120nm thick, x is more than or equal to 0.05 and less than or equal to 0.25; ge (germanium) oxide 1-x R x The R element in the film is Sn or Si;
step 3. Ge deposited in step 2 1-x R x Carrying out boron atom doping modification treatment on the surface of the film to ensure that the carrier concentration of the film is 10 16-17 cm -3 To obtain p-type Ge 1-x R x A film; step 4, obtaining p-type Ge in step 3 1-x R x Growing i-type Ge on the surface of the film by adopting molecular beam epitaxy technology 1-x R x The intrinsic thin film, wherein, the content of x is consistent with that in the step 2, and the thickness of the thin film is 60-120 nm;
step 5. I type Ge deposited in step 4 1-x R x Growing n-type Ge on the surface of the intrinsic film by double-source and double-control method 1-y X y Thin film of, wherein, ge 1-y X y The thickness of the film is 100-120 nm; ge (germanium) oxide 1-y X y The X element in the film is BiSb or Tm;
step 6, ge obtained in step 5 1-y X y The surface of the film is provided with an electrode by adopting a method of magnetron radio frequency sputtering deposition, photoetching and reactive ion beam etching, and the two-dimensional PIN junction infrared photoelectric detector can be obtained.
4. The method of claim 3, wherein the step 2 comprises growing Ge by molecular beam epitaxy 1-x R x The specific process of the film is as follows:
step 2.1, the intrinsic monocrystalline silicon substrate cleaned in the step 1 is placed in a cavity of molecular beam epitaxy equipment, and vacuum pumping is carried out until the air pressure of the cavity is 10 -10 Torr；
Step 2.2, heating the substrate to 150-250 ℃, and keeping the temperature for 40-50 min to remove gas and impurities attached to the surface of the substrate;
step 2.3, respectively heating the reaction source germanium source and the R source to 1200-1350 ℃ and 800-1050 ℃, and simultaneously heating the substrate to 250-450 ℃;
step 2.4, opening baffles of the germanium source and the R source, opening a substrate baffle after the beam current is stable, and depositing Ge on the substrate 1-x R x After the deposition reaction of the film is finished, the substrate baffle and the baffles of the R source and the germanium source are closed, and Ge can be obtained on the surface of the silicon substrate 1-x R x A film.
5. The production method according to claim 4, wherein the temperature increase rate of the heated substrate in step 2.2 is 3 to 5 ℃/min; in the step 2.3, the volume percentage purity of the germanium source is higher than 99.99 percent, and the heating rate is 5-7 ℃/min; the volume percentage purity of the R source is higher than 99.99 percent, and the heating rate is 3-5 ℃/min; the heating rate of the substrate is 3-5 ℃/min; the deposition reaction time in step 2.4 is 60-120 min.
6. The method of claim 3, wherein step 5 comprises depositing Ge by dual source and dual control 1-y X y The specific process of the film is as follows:
step 5.1, opening germaniumA source baffle, after the beam current is stabilized, opening a substrate baffle to obtain the i-type Ge 1-x R x Depositing a Ge film on the surface of the intrinsic film, closing the substrate baffle and the baffle of the germanium source after the reaction is finished, closing the substrate heating device, and cooling;
step 5.2, heating the reaction source X source to 300-500 ℃, opening a baffle of the X source when the temperature of the substrate is reduced to 150-250 ℃, waiting for the beam current to be stable, and opening the baffle of the substrate for growth;
step 5.3, adjusting the temperature of the substrate to 400-600 ℃, and keeping the temperature for 60-180 min to ensure that X atoms enter crystal lattices of the germanium film to finish N-type doping;
step 5.4, after the doping reaction is finished, cooling to room temperature to obtain the Ge film 1-x R x The Ge with the thickness of 100-120 nm is obtained on the surface of the film 1-y X y A film.
7. A two-dimensional PIN junction infrared photodetector array comprising a plurality of row conductors, a plurality of column conductors, and a two-dimensional PIN junction infrared photodetector according to any of claims 1-2; the two-dimensional PIN junction infrared photoelectric detector is characterized in that all column conductors are arranged on the surface of a substrate at equal intervals, all row conductors are perpendicular to the column conductors at equal intervals, an insulating film is arranged at the crossed part of the row conductors and the column conductors, a two-dimensional PIN junction infrared photoelectric detector is arranged in a space divided by the row conductors and the column conductors, electrodes of the two-dimensional PIN junction infrared photoelectric detector are respectively connected with the row conductors and the column conductors, and a connecting line of the detector and the conductors and the row conductors have a certain angle.
8. A two-dimensional PIN junction infrared photodetector array as defined in claim 7, wherein any two-dimensional PIN junction infrared photodetectors in the detector array are of the same or different materials.
9. A two dimensional PIN junction infrared photodetector array as defined in claim 7, wherein the angle between the connecting line of the detector to the conductor and the row conductor is 30-60 °.
10. A two-dimensional PIN junction infrared photodetector array as claimed in claim 7, wherein the row and column conductors have a width of 10 μm to 100 μm and a length of 200 μm to 1000 μm.
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WO2010033641A1 (en) * 2008-09-16 2010-03-25 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Gesn infrared photodetectors
EP2641276A2 (en) * 2010-11-19 2013-09-25 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And Behalf Of Dilute sn-doped ge alloys

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CN107507876A (en) * 2017-08-28 2017-12-22 北京邮电大学 A kind of β Ga2O3Base solar blind UV electric explorer array and preparation method thereof
CN111933738A (en) * 2020-07-29 2020-11-13 电子科技大学 Self-forming junction photoelectric detector based on molecular beam epitaxy technology and preparation method thereof

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