CN114280080A - Method for detecting transparent flaky defects - Google Patents
Method for detecting transparent flaky defects Download PDFInfo
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- CN114280080A CN114280080A CN202111505957.8A CN202111505957A CN114280080A CN 114280080 A CN114280080 A CN 114280080A CN 202111505957 A CN202111505957 A CN 202111505957A CN 114280080 A CN114280080 A CN 114280080A
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Abstract
The invention provides a method for detecting transparent flaky defects, which comprises the following steps: providing a detection sample with transparent flaky defects; placing the detection sample in a dark field scanning machine, observing the obtained scanning image, rotating the detection sample, and changing the light source incidence angle of the dark field scanning machine until the noise point of the scanning image is reduced; changing a polarization parameter of the light source until the transparent flake-like defects are brightly enhanced in the scanned image. The technical scheme of the invention has the beneficial effects that: the dark field scanning machine can reduce the noise of the scanned image, enhance the brightness of the transparent sheet-shaped defects and effectively detect the transparent sheet-shaped defects.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a method for detecting transparent flaky defects.
Background
In the semiconductor manufacturing industry, defects generated during the manufacturing process are the most important cause of the reduction of chip reliability and manufacturing yield, and therefore how to effectively detect online defects is of great significance in the semiconductor manufacturing process.
In the prior art, transparent sheet-like defects are usually detected through a dark field scanner, the signal-to-noise ratio of a scanned image of the dark field scanner is low, and the transparent sheet-like defects cannot scatter a light source of the dark field scanner, so that the transparent sheet-like defects are difficult to distinguish from noise under the condition of insufficient brightness of the defects, and the transparent sheet-like defects cannot be effectively detected.
Disclosure of Invention
In view of the above problems in the prior art, a method for detecting a transparent sheet-like defect is provided. The specific technical scheme is as follows:
a method for detecting transparent flaky defects comprises the following steps:
step S1, providing a detection sample with transparent sheet-like defects;
step S2, placing the detection sample in a dark field scanning machine platform, and observing the obtained scanning image;
step S3, rotating the detection sample, and changing the light source incidence angle of the dark field scanning machine until the scanning image noise is reduced;
step S4, changing the polarization parameter of the light source until the brightness of the transparent flake-like defect in the scanned image is enhanced.
Preferably, the detection sample is a wafer.
Preferably, in step S3, the test sample is rotated according to the pattern on the test sample.
Preferably, the step S3 further includes the steps of:
step S31, selecting a predetermined angle as the rotation step length;
step S32 of rotating the detection sample in the same direction by the rotation step;
step S33, selecting a light source incidence angle of the dark field scanning machine;
a step S34 of observing the scan image;
step S35, determining whether there is any unused incident angle of the light source, and if so, selecting an unused incident angle of the light source and returning to step S34;
step S36, detecting whether the accumulated rotation angle of the sample is larger than or equal to 360 degrees, and returning to the step S32 if not;
and step S37, when the noise point of the scanned image is minimum, the angle of the detected sample and the light source incidence angle of the dark field scanning machine are obtained.
Preferably, in the step S31, the predetermined angle is selected within a range of 5 ° to 90 °.
Preferably, the step S4 further includes the steps of:
step S41, rotating the inspection sample by the angle obtained in step S37, and adjusting the light source incident angle of the dark field scanning stage by the light source incident angle obtained in step S37;
step S42, selecting a light source polarization parameter of the dark field scanning machine;
a step S43 of observing the scan image;
step S44, determining whether there is any polarization parameter of the light source that has not been used, and returning to step S43 after selecting a polarization parameter of the light source that has not been used if there is any polarization parameter of the light source that has not been used;
and step S45, acquiring the light source polarization parameter of the dark field scanning machine when the brightness of the transparent flaky defect in the scanned image is strongest.
The technical scheme of the invention has the beneficial effects that the noise of the image scanned by the dark field scanning machine can be reduced, and the brightness of the transparent sheet-shaped defects is enhanced, so that the transparent sheet-shaped defects can be effectively detected.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a flowchart illustrating steps of an embodiment of a method for detecting transparent sheet-like defects according to the present invention;
FIG. 2 is a flowchart illustrating the step S3 of the method for detecting transparent thin-film defects according to the embodiment of the present invention;
FIG. 3 is a flowchart illustrating the step S4 of the method for detecting transparent thin-film defects according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
As shown in fig. 1, the technical solution of the present invention includes a method for detecting a transparent sheet-like defect, wherein the method includes the following steps:
step S1, providing a detection sample with transparent sheet-like defects;
step S2, placing the detection sample in a dark field scanning machine platform, and observing the obtained scanning image;
step S3, rotating the detection sample, and changing the light source incidence angle of the dark field scanning machine until the noise of the scanned image is reduced;
in step S4, the polarization parameters of the light source are changed until the brightness of the transparent flake-like defects in the scanned image is enhanced.
According to the technical scheme, the sample is detected by rotating, and the light source incidence angle of the dark field scanning machine is changed, so that the noise of the scanning image of the dark field scanning machine is reduced, the signal to noise ratio is improved, and the detection of the transparent flaky defects is facilitated.
Furthermore, the light source of the dark field scanning machine table can be scattered by the transparent sheet-like defects by changing the polarization parameters of the light source, so that the brightness of the transparent sheet-like defects in the scanning image of the dark field scanning machine table is enhanced, the transparent sheet-like defects and noise can be distinguished conveniently, and the effective detection of the transparent sheet-like defects can be realized.
Based on the above technical solution, preferably, the detection sample may be a wafer. The wafer is used as a detection sample to realize real-time detection of online defects.
On the basis of the above technical solution, preferably, in step S3, the test sample may be rotated according to the pattern direction on the test sample. The rotation of the detection sample according to the pattern trend on the detection sample is beneficial to reducing the noise of the scanning image of the detection sample on the dark field scanning machine.
On the basis of the above technical solution, as shown in step S3 shown in fig. 2, the method may further include the following steps:
step S31, selecting a predetermined angle as the rotation step length;
step S32, rotating the detection sample in the same direction by the rotation step length;
step S33, selecting a light source incidence angle of a dark field scanning machine;
step S34, observing a scanning image;
step S35, whether there is any unused light source incident angle, if yes, selecting an unused light source incident angle and returning to step S34;
step S36, detecting whether the accumulated rotation angle of the sample is more than or equal to 360 degrees, if not, returning to the step S32;
and step S37, when the noise point of the scanning image is minimum, detecting the angle of the sample and the light source incidence angle of the dark field scanning machine.
According to the technical scheme, the detection sample is rotated by taking a preset angle as a rotation step length, and the scanning image of the dark field scanning machine is observed at different light source incidence angles after the detection sample is rotated every time, so that when the noise point of the scanning image is minimum, the angle of the detection sample and the light source incidence angle of the dark field scanning machine are detected, and the light source polarization parameter of the dark field scanning machine can be conveniently and further adjusted subsequently to obtain the optimal detection image.
Further preferably, in step S31, the predetermined angle may be selected within a range of 5 ° to 90 ° as the rotation step. The rotation step length selected from the range of 5-90 degrees can cover 360 degrees, namely the rotation angle of one circle, and meanwhile, the rotation angle of the detected sample can be accurately controlled by selecting a smaller rotation step length such as 5 degrees so as to obtain a scanning image with the optimal signal-to-noise ratio, or the rotation times can be reduced by selecting a larger rotation step length such as 90 degrees so as to reduce the time required by detection adjustment.
On the basis of the above technical solution, as shown in fig. 3, step S4 may further include the following steps:
step S41, rotating the inspection sample by the angle obtained in step S37, and adjusting the incident angle of the light source of the dark field scanner stage by the incident angle of the light source obtained in step S37;
step S42, selecting a light source polarization parameter of a dark field scanning machine;
step S43, observing a scanning image;
step S44, whether there is any unused polarization parameter of the light source, if yes, selecting an unused polarization parameter of the light source and returning to step S43;
and step S45, obtaining the light source polarization parameter of the dark field scanning machine when the brightness of the transparent sheet-like defect in the scanned image is strongest.
In the technical scheme, after the rotation angle of the detection sample corresponding to the currently-reachable optimal scanning image signal-to-noise ratio and the light source incidence angle of the dark field scanning machine are obtained, the scanning image under each light source polarization parameter supported by the dark field scanning machine is observed, so that the light source polarization parameter of the transparent sheet-shaped defect in the scanning image when the brightness is optimal can be obtained, and the transparent sheet-shaped defect can be effectively detected.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (6)
1. A method for detecting a transparent sheet-like defect, comprising the steps of:
step S1, providing a detection sample with transparent sheet-like defects;
step S2, placing the detection sample in a dark field scanning machine platform, and observing the obtained scanning image;
step S3, rotating the detection sample, and changing the light source incidence angle of the dark field scanning machine until the scanning image noise is reduced;
step S4, changing the polarization parameter of the light source until the brightness of the transparent flake-like defect in the scanned image is enhanced.
2. The inspection method of claim 1, wherein the inspection sample is a wafer.
3. The detecting method according to claim 1, wherein in the step S3, the detecting sample is rotated according to the pattern orientation on the detecting sample.
4. The detecting method according to claim 1, wherein the step S3 further comprises the steps of:
step S31, selecting a predetermined angle as the rotation step length;
step S32 of rotating the detection sample in the same direction by the rotation step;
step S33, selecting a light source incidence angle of the dark field scanning machine;
a step S34 of observing the scan image;
step S35, determining whether there is any unused incident angle of the light source, and if so, selecting an unused incident angle of the light source and returning to step S34;
step S36, detecting whether the accumulated rotation angle of the sample is larger than or equal to 360 degrees, and returning to the step S32 if not;
and step S37, when the noise point of the scanned image is minimum, the angle of the detected sample and the light source incidence angle of the dark field scanning machine are obtained.
5. The detecting method according to claim 4, wherein in the step S31, the predetermined angle is selected within a range of 5 ° -90 °.
6. The detecting method according to claim 4, wherein in the step S4, the method further comprises the steps of:
step S41, rotating the inspection sample by the angle obtained in step S37, and adjusting the light source incident angle of the dark field scanning stage by the light source incident angle obtained in step S37;
step S42, selecting a light source polarization parameter of the dark field scanning machine;
a step S43 of observing the scan image;
step S44, determining whether there is any polarization parameter of the light source that has not been used, and returning to step S43 after selecting a polarization parameter of the light source that has not been used if there is any polarization parameter of the light source that has not been used;
and step S45, acquiring the light source polarization parameter of the dark field scanning machine when the brightness of the transparent flaky defect in the scanned image is strongest.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117269193A (en) * | 2023-09-26 | 2023-12-22 | 迈沐智能科技(南京)有限公司 | Intelligent detection method for apparent mass of synthetic leather |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177559A (en) * | 1991-05-17 | 1993-01-05 | International Business Machines Corporation | Dark field imaging defect inspection system for repetitive pattern integrated circuits |
KR20060132081A (en) * | 2005-06-17 | 2006-12-21 | 삼성전자주식회사 | Apparatus for detecting defect of a wafer |
CN101473219A (en) * | 2006-07-14 | 2009-07-01 | 株式会社尼康 | Surface inspecting apparatus |
JP2010249843A (en) * | 2010-07-30 | 2010-11-04 | Hitachi High-Technologies Corp | Method and apparatus for defect inspection |
US8582094B1 (en) * | 2005-04-20 | 2013-11-12 | Kla-Tencor Technologies Corp. | Systems and methods for inspecting specimens including specimens that have a substantially rough uppermost layer |
US20150022806A1 (en) * | 2012-03-13 | 2015-01-22 | Hitachi High-Technologies Corporation | Defect inspection method and its device |
CN112697800A (en) * | 2020-12-09 | 2021-04-23 | 上海御微半导体技术有限公司 | Defect detection device and method |
CN113125436A (en) * | 2021-04-22 | 2021-07-16 | 华中科技大学 | Detection system and method based on optical dark field microscopy |
CN214374364U (en) * | 2021-01-27 | 2021-10-08 | 武汉精立电子技术有限公司 | Defect detection device based on optical imaging |
-
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177559A (en) * | 1991-05-17 | 1993-01-05 | International Business Machines Corporation | Dark field imaging defect inspection system for repetitive pattern integrated circuits |
US8582094B1 (en) * | 2005-04-20 | 2013-11-12 | Kla-Tencor Technologies Corp. | Systems and methods for inspecting specimens including specimens that have a substantially rough uppermost layer |
KR20060132081A (en) * | 2005-06-17 | 2006-12-21 | 삼성전자주식회사 | Apparatus for detecting defect of a wafer |
CN101473219A (en) * | 2006-07-14 | 2009-07-01 | 株式会社尼康 | Surface inspecting apparatus |
JP2010249843A (en) * | 2010-07-30 | 2010-11-04 | Hitachi High-Technologies Corp | Method and apparatus for defect inspection |
US20150022806A1 (en) * | 2012-03-13 | 2015-01-22 | Hitachi High-Technologies Corporation | Defect inspection method and its device |
CN112697800A (en) * | 2020-12-09 | 2021-04-23 | 上海御微半导体技术有限公司 | Defect detection device and method |
CN214374364U (en) * | 2021-01-27 | 2021-10-08 | 武汉精立电子技术有限公司 | Defect detection device based on optical imaging |
CN113125436A (en) * | 2021-04-22 | 2021-07-16 | 华中科技大学 | Detection system and method based on optical dark field microscopy |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117269193A (en) * | 2023-09-26 | 2023-12-22 | 迈沐智能科技(南京)有限公司 | Intelligent detection method for apparent mass of synthetic leather |
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